Quantum Devices Laboratory is directed by Prof. Ming-Hua Mao. Current research focuses on three major areas:
(1) Fabrication and investigation of III-V/Si microcavity lasers and other photonic devices. The influences of microcavity structures on emission properties will be investigated experimentally and their potentials for device applications will be explored. Current-injection quantum-dot microdisk lasers operating at room temperature are demonstrated for the first time. The threshold current is smaller than 0.5 mA. These microdisk lasers with superior properties can be applied in miniaturized photonic devices, energy-saving or integration with Si waveguide structures for optical interconnect.
(2) Fabrication of III-V nanowire-based electronic and photonic devices. Vertical and lateral InAs nanowire MOSFETs are experimentally demonstrated. Other nanowire-based devices are currently under investigation.
(3) Time and spatially resolved optical/carrier dynamics studied by a femto-second laser. Ultrafast studies on various materials and devices in UV, Vis, and IR ranges can be carried out using time-correlated single photon counting or pump-probe measurement schemes in micro-PL setup.