主要研究領域:
III-V 族和 II-VI 族半導體元件分析、氮化銦鎵發光二極體、高功率場效電晶體、奈米線及量子點結構分析、薄膜電晶體
Major Research Areas:
InGaN quantum well and quantum dot LEDs, nano structure LED , high power nitride based HEMTs, and Ferroelectronics
研究領域摘要:
我們實驗室目前專注在分析光電元件之問題以及發展適當的數值軟體來解析這些元件
目前實驗室發展之軟體:
- 1D to 3D Poisson and Drift-diffusion and thermal solver : For studying the current spreading, heating, and carrier recombination mechanism.
- 1D Poisson- k.p Schrodinger Solver for quantum well structures
- Ensemble Monte Carlo Method for studying the carrier dynamics (LED and Transistor)
- Valence Force Field model for the nano structure strain analysis.
- 3D Poisson- k.p Schrodinger Solver for quantum dot structures
GaN LED Analysis:
- The band structure, potential and current spreading issue in GaN LED.
- The heating issues in the LED
- The lighting emitting properties of semipolar-plane and nonepolar plane LED.
- The strain Analysis of nano-structured LED ( nanorod, nanowire, etc.).
- Quantum dot structure Analyzation
ZnO based Thin film transistor
- The mobility analysis of polycrystalline ZnO thin film.
- The design of optimized multi-layer structure.
Design of High Speed Transistor
- The high power nitride HFET
- The analysis of the nanowire transistor
Research Summary:
InGaN LED Analysis:
- The band structure, potential and current spreading issue in GaN LED.
- The heating issues in the LED
- The lighting emitting properties of semipolar-plane and nonepolar plane LED.
- The strain Analysis of nano-structured LED ( nanorod, nanowire, etc.).
- Quantum dot structure Analyzation
ZnO based Thin film transistor
- The mobility analysis of polycrystalline ZnO thin film.
- The design of optimized multi-layer structure.
Design of High Speed Transistor
- The high power nitride HFET
- The analysis of the nanowire transistor
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