李峻霣 Jiun-Yun Li

國立台灣大學電機工程學系 副教授
國立台灣大學電子工程學研究所 副教授
Associate Professor, Department of Electrical Engineering, National Taiwan University
Associate Professor, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

主要研究領域:

四族半導體磊晶、量子物理及元件應用、量子計算

Major Research Areas:

Group-IV epitaxy (GeSn), quantum physics and devices applications, quantum computing

研究領域摘要:

一、二微電子物理及量子電腦應用:

二微電子(洞)物理系統提供了許多有趣的物理現象如量子霍爾效應,近來由於量子點可作為量子電腦基本組成單元,故其電子(洞)遷移的基本特性再次成為人們研究的焦點。本實驗室著重各種不同散射機制對於二維電子(洞)系統的影響,以了解更多的凝態物理現象如雙層二維電子系統、穿隧量子現象及玻色凝聚態激發子。

二、半導體磊晶:

上述元件及基本物理研究皆需要磊晶生長,故本實驗室亦著重於以矽為基板的化學氣相磊晶如鍺(錫)化合物磊晶生長,或利用分子束磊晶生長InAs/GaSb異質結構,以及材料基本特性分析。

Research Summary:

I.    Quantum physics for quantum computing applications

Another Si electronics renaissance is the spin-based quantum computing utilizing Si quantum dots.  The baseline structure for quantum dots is modulation-doped two-dimensional electron gases (2DEGs).  In our lab, we are interested in electron transport properties at low temperatures.  Interesting topics include inverted 2DEG structure, bi-layer tunneling of 2DEGs, and exciton pair of 2DEG bi-layer devices.

II.   Group IV epitaxy (chemical vapor deposition)

To study all the above novel devices, epitaxy is required such as chemical vapor deposition (CVD), which is compatible to Si technology.  The main areas of interest are the material properties of SiGeSn such as the strain condition of SiGeSn on Si substrates and Ge segregation. Furthermore, for device applications in nano-meter regime, epitaxial control in atomic dimension is critical.  This will cover the material growth and characterization for device applications.

Photo of Jiun-Yun Li