胡振國 Jenn-Gwo Hwu

國立台灣大學電機工程學系 教授
國立台灣大學電子工程學研究所教授
臺大電機工程學系主任
Professor, Department of Electrical Engineering, National Taiwan University
Professor, Graduate Institute of Electronics Enginering, National Taiwan UniversityChairman, Department of Electricl Engineering, National Taiwan University

主要研究領域:

矽金氧半元件/超薄閘極氧化層製程技術/新型矽基元件/快速熱機台及製程/均勻度及應力控制/矽金氧半太陽電池

Major Research Areas:

Si MOS Devices/Ultra-thin Gate Oxide Processes/Novel Si-based Devices/Rapid Thermal Processing-RTP /Uniformity and Stress Control/Si MOS Solar Cell

研究領域摘要:

主要研究方向為矽基材料上之金氧半(MOS)元件，尤其是有關超薄閘極絕緣層之研發。

利用純水中加上電場技術，將超薄SiO2 (< 2.5 nm)不均勻處予以自動補償，使電特性改善，漏流降低;利用超薄金屬鋁之液相氧化，經由電場及時間之準確控制，可使氧化膜形成高介電係數氧化鋁，同時在界面形成適當之SiO2層，達到低成本高品質之新型高介電係數閘極絕緣層開發;利用超薄氧化層MOS(p)元件於正偏壓下電流飽和之特性，製作溫度感測器，可整合於先進IC製程，監控電路溫度變化，靈敏度可達近2V/oC;利用超薄氧化層MOS(p)元件於正偏壓下電流飽和之特性，作為晶格表面受到應力施加情形之感測，得知晶圓之應力分布，及元件受應力之衰退機制;利用快速熱(RTP)及流場之控制，可得不同熱應力下之元件特性，提供有效之應力研究環境，並改善應力均勻度;在RTP中晶圓承接台及上方加上不同之材料，可得較佳之溫度分布;利用自製之重覆脈衝加熱(RSO)技術，可得較佳之超薄氧化層後厚度均勻度;利用H2SiF6溶液於電場下快速成長室溫氧化層，可得低成本MOS太陽電池，效率可達10 %;利用液相氧化技術，研製高阻抗元件，觀察低溫下之I-V特性，製作單電子電晶體(SET)元件，並模擬設計元件及電路特性。

    研究以實作為主，結合精準之I-V及C-V量測得知元件特性，經分析解釋得知原理並進行改善，進而研發新型元件，提供學術界及業界參考。

Research Summary:

The major research topics are on the Si Metal-Oxide- Semiconductor (MOS) devices, especially on the study of ultra-thin gate oxides.

     Using the compensation of anions through ultra-thin oxides via the field stress in D.I. water, the oxide will become more uniform and less leaky.  By suitably controlling anodization time and field, one can obtain cost effective high-k Al2O3 by the oxidation of thin Al film.  Using the saturation characteristic of I-V curve of MOS(p) devices, one can detect the temperature and stress distribution within the wafer.  By adding suitable susceptors and cover quartz on wafer, one can control the temperature and flow distribution in RTP, and therefore the uniformity of oxide thickness.  Using anodization in H2SiF6 solution, one can prepare room temperature MOS solar cells with efficiency close to 10 %.  By controlling the oxidation condition of films, high resistance resistors can be obtained.  The I-V characteristics are examined and are studied for the preparation of single electron transistor (SET).  The device and circuit simulations are also considered.

     Experiments are essential in the study of devices.  From measurements and analyses, devices’ characteristics are explained and novel devices are proposed.


 
Photo of Jenn-Gwo Hwu

代表性著作 Selected Publication

  1. J.Y.Cheng, C.T.Huang, and J.G.Hwu*, “Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultra-thin oxides,” Journal of Applied Physics, Vol.106, No.7, PP.074507-1~074507-7, Oct. 2009
  2. C.Y.Yang and J.G.Hwu*, “Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid,” Journal of the Electrochemical Society, Vol.156, No.11,, PP.G184-G189, Sept. 2009
  3. C.H.Chang and J.G.Hwu*, “Characteristics and Reliability of Hafnium Oxide Dielectric Stacks with Room Temperature Grown Interfacial Anodic Oxide,” IEEE Transactions on Device and Materials Reliability, Vol. 9, No.2, PP.215-221., Jun. 2009
  4. C.H.Chen, K.C.Chuang and J.G.Hwu*, “Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors with Ultra-thin Oxides and High-k Dielectrics,” IEEE Transactions on Electron Devices, Vol.56, No.6,, PP.1262-1268, Jun. 2009
  5. C.Y.Wang and J.G.Hwu*, “Metal-Oxide-Semiconductor (MOS) Structure Solar Cell Prepared by Low Temperature (< 400oC) Anodization Technique,” Journal of the Electrochemical Society, Vol.156, No.3, PP. H181-H183., Jan. 2009
  6. K.C.Chuang and J.G.Hwu*, “Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method,” Journal of the Electrochemical Society,, Vol.155, No.8, PP.G159-G162., Aug. 2008
  7. J.C.Tseng and J.G.Hwu*, “Lateral Non-uniformity Effects of Border Traps on The Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor Subjected to High-Field Stresses,” IEEE Transactions on Electron Devices, Vol.55, No.6, PP.1366-1372., Jun. 2008
  8. C.C.Wang, T.H.Li, K.C.Chuang and J.G.Hwu*, “Study of Ultra-thin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System,” Journal of the Electrochemical Society, Vol.155, No.3, PP.G61-G64., Mar. 2008
  9. C.H.Chang and J.G.Hwu*, “Reliability of Low Temperature Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-effective Nitric Acid Oxidation (NAO) Technique,” IEEE Transactions on Device and Materials Reliability, Vol. 7, No.4, PP.611-616., Dec. 2007
  10. H.P.Lin and J.G.Hwu*, “Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-based Terman Method,” IEEE Transactions on Electron Devices, Vol. 54, No.11, PP. 3064-3070, Nov. 2007
  11. J.C.Tseng and J.G.Hwu*, “Oxide Trapped Charges Induced by Electrostatic Discharge (ESD) Impulse Stress,” IEEE Transactions on Electron Devices, Vol.54, No.7, PP.1666~1671, Jul. 2007
  12. Y.L.Yang, C.H.Chang, Y.H.Shih, K.Y.Hsieh, and J.G.Hwu*, “Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory,” IEEE Transactions on Electron Devices, Vol.54, No.6, PP.1360~1365, Jun. 2007
  13. J.C.Chiang and J.G.Hwu*, “Low Temperature (< 400 ℃) Al2O3 Ultrathin Gate Dielectrics Prepared by Shadow Evaporation of Aluminum Followed by Nitric Acid Oxidation,” Applied Physics Letters, Vol.90, No.10, PP.102902-1~102902-3, Mar. 2007
  14. J.C.Tseng and J.G.Hwu*, “Effects of Electrostatic Discharge (ESD) High-Field Current Impulse on Oxide Breakdown”,” Journal of Applied Physics, Vol.101, No.1, PP. 014103-1~014103-6, Jan. 2007
  15. K.C.Chuang and J.G.Hwu*, “Improvement in Electrical Characteristics of High-k Al2O3 Gate Dielectric by Field-Assisted Nitric Oxidation,” Applied Physics Letters, Vol.89, No.23, PP.232903-1~232903-3, Dec. 2006
  16. T.M.Wang, C.H.Chang, and J.G.Hwu*, “Enhancement of Temperature Sensitivity of Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide (HfO2) Film Added on Silicon Dioxide (SiO2),” IEEE Sensors Journal, Vol. 6, No. 6, PP. 1468-1472, Dec. 2006
  17. S.W.Huang and J.G.Hwu*, “Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors with Al2O3 Gate Dielectrics,” IEEE Transactions on Electron Devices, Vol.53, No.7, PP.1608-1614, Jul. 2006
  18. C.W.Tung, Y.L.Yang and J.G.Hwu*, “Impact of Strain-Temperature Stress on Ultrathin Oxide,” IEEE Transactions on Electron Devices, Vol.53, No.7, PP.1736-1737, Jul. 2006
  19. T.M. Wang and J.G. Hwu*, “Temperature-Induced Voltage Drop Rearrangement and Its Effect on Oxide Breakdown in MOS Capacitor Structure,” Journal of Applied Physics, Vol.97, No.4, PP.044504-1~5, Apr. 2005
  20. Y.P.Lin and J.G.Hwu*, “Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current,” Journal of The Electrochemical Society, Vol.151, No.12, PP.G853-G857, Dec. 2004
  21. S.W.Huang and J.G.Hwu*, “Ultra-Thin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation,” IEEE Transactions on Electron Devices, Vol.51, No.11, PP.1877-1882, Nov. 2004
  22. Y.L.Yang and J.G.Hwu*, “Quality Improvement of Ultra-Thin Gate Oxide by Using Thermal-Growth Followed by Scanning-Frequency Anodization (SF ANO) Technique,” IEEE Electron Device Letters, Vol.25, No.10, PP.687-689, Oct. 2004
  23. W.J.Liao, Y.L.Yang, S.C.Chuang, and J.G.Hwu*, “Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides,” Journal of The Electrochemical Society, Vol.151, No.9, PP.G549-G553, Sept. 2004
  24. Y.H.Shih, S.R.Lin, T.M.Wang, and J.G.Hwu*, “High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection,” IEEE Transactions on Electron Devices, Vol.51, No.9, PP.1514-1521, Sept. 2004
  25. C.S.Kuo, J.F.Hsu, S.W.Huang, L.S.Lee, M.J.Tsai, and J.G.Hwu*, “High-k Al2O3 Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High Temperature Annealing,” IEEE Transactions on Electron Devices, Vol.51, No.6, PP.854-858, Jun. 2004
  26. S.W.Huang and J.G.Hwu*, “Electrical Characterization and Process Control of Cost Effective High-k Aluminum Oxide Gate Dielectrics Prepared by Anodization Followed by Furnace Annealing,” IEEE Transactions on Electron Devices, Vol.50, No.7,, PP.1658-1664, Jul. 2003
  27. C.C.Hong and J.G.Hwu*, “Stress Distribution on (100) Si Wafer Mapped by Novel I-V Analysis of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol.24, No.6, PP.408-410, Jun. 2003