楊英杰教授的著作列表 - Publication List of Ying-Jay Yang

Publication List of 楊英杰 Ying-Jay Yang

Journal articles & book chapters:

  1. Jin-Wei Shi; Yen, J.-L.; Jiang, C.-H.; Chen, K.-M.; Hung, T.-J.; Ying-Jay Yang, “Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures,” IEEE Photon. Technol. Lett., vol.18, Feb. 2006
  2. Chin-Kuei Kuo, Chih-Wei Hsu, Chien-Ting Wu, Zon-Huang Lan, Chung-Yuan Mou, Chia-Chun Chen, Ying-Jay Yang, Li-Chyong Chen and Kuei-Hsien Chen, “Self-regulating and diameter-selective growth of GaN nanowires,” Nanotechnology, Vol. 17, S1-S6, 2006
  3. Jin-Wei Shi, C.-H. Jiang, K.-M. Chen, Y.-J. Yang, J.-L. Yen, “Single-mode vertical-cavity surface-emitting laser with ring-shaped light-emitting aperture,” Appl. Phys. Lett., vol. 87, Jul. 2005
  4. C.-H. Jiang, J.-W. Shi, J.-L. Yen, K.-M. Chen, and Ying-Jay Yang, “Single-Mode Vertical-Cavity-Surface-Emitting-Laser (VCSEL) with Ring Shaped Microcavity and Low Divergence Angle Performance,” Conference on Laser and Electro-Optics (CLEO/QELS’2005), USA, OSA Technical Digest, JTUC83, 2005
  5. Kuei-Hsien Chen, Chih-Hsun Hsu, Hung-Chun Lo, Surojit Chattopadhyay, Chien Ting Wu, Jih-Shang Hwang, Ying-Jay Yang and Li-Chyong Chen, “Generally applicable self-masking technique for nanotips array fabrication,” International Journal of Nanoscience, Vol. 4, Nos 5&6, pp. 879-886, 2005
  6. H. T. Young, Hung-Yi Huang and Ying-Jay Yang, “A fundamental modeling approach for nano-grinding of silicon wafers,” Material Science Forum, 2005
  7. Y. F. Hsiou, Y. J. Yang, L. Stobinski, Watson Kuo and C. D. Chen, “Controlled placement and electrical contact properties of individual multi-walled carbon nanotubes on patterned silicon chips,” Applied Physics. Letters, Vol. 84, pp. 984-986, 2004
  8. C.-H. Jiang, Jin-Wei Shi, J.-L. Yen, K.-M. Chen, and Ying-Jay Yang, “Single-Mode Vertical-Cavity-Surface-Emitting-Laser (VCSEL) with Ring Shaped Light-Emitting Aperture,” Technical Digest of Optics and Photonics Taiwan'04, 2004
  9. M.-K. Tsai, Y.-W. Wu, S.-W. Tan, W.-S. Lour and Y. J. Yang, “Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation,” IEEE Trans. Electron Devices, 2003
  10. 14. J. S. Hwang, F. H. Yang, T. H. Li, C. M. Chuan, C. T. Wu, Y. J. Yang, L. G. Hwa, L. C. Chen, and K. H. Chen, “Temperature dependence of InN film growth,” Proceeding of 2002 Annual Meeting of the Physical Society of the Republic of China, Feb. 2002
  11. 15. C. M. Chuan, J. S. Hwang, F. H. Yang, Y. J. Yang, K. H. Chen, L. C. Chen, and L. G. Hwa, “Photoluminescence and raman study of InN films ion-implanted with nitrogen and magnesium,” Proceeding of 2002 Annual Meeting of the Physical Society of the Republic of China, Feb. 2002
  12. F. H. Yang, J. H. Hwang, K. H. Chen, Y. J. Yang, J. H. Wang, “Growth of high-quality epitaxial InN film with high-speed reactant gas organpmetallic vapor phase epitaxy,” Japanese Journal of Applied Physics, Vol. 41, Pt. 2, No., 2002
  13. 11. F. H. Yang, J. H. Hwang, K. H. Chen, Y. J. Yang, T. H. Lee, L. G. Hwa, L. C. Chen, “High growth rate deposition of oriented hexagonal InN films,” Thin Solid Films, Vol. 405, pp. 194-197, 2002
  14. F. H. Yang, C. J. Hsao, Y. J. Yang, J. H. Lin, L. Wang, “Fabrication of blue GaN light-emitting diode by laser etching,” Japanese Journal of Applied Physics, Vol. 41, Pt. 2, No. 4B, pp. L012-L014, 2002
  15. F. H. Yang, J. H. Hwang, K. H. Chen, and Y. J. Yang, “Lateral growth of InN on GaN//sapphire,” Material Research Society Symposium Proceeding, Vol. 693, pp. 245, 2002
  16. M.-K. Tsai, S.-W. Tan, Y.-W. Wu, W.-S. Lour, and Y. J. Yang, “Depletion- and enhancement-mode InGaP/GaAs -HEMT’s for low supply-voltage applications,” Semicond. Sci. Technol., 17, pp. 156-160, 2002
  17. W.-S. Lour, M.-K. Tsai, K.-C. Chen, S.-W. Tan, Y.-W. Wu and Y. J. Yang, “Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors,” Physica E, 13, pp. 934-937, 2002
  18. W.-S. Lour, M.-K. Tsai, Y.-W. Wu, S.-W. Tan and Y. J. Yang, “Al0.45Ga0.55As/GaAs HBT with low turn-on voltage and performance improvement by wet-oxidized graded-like superlattice-emitter,” Appl. Phys. Lett., 80, pp. 3436-3438, 2002
  19. J. S. Hwang, C. M. Chuan, F. H. Yang, Y. J. Yang, L. G. Hwa, L. C. Chen,, “Photoluminescence and Raman study of nitrogen ion-implanted InN,” Proceeding of Optics and Photonics Taiwan ’01, Dec. 2001
  20. F. H. Yang, J. H. Hwang, K. H. Chen, and Y. J. Yang, “Effects of high-speed reaction gas on InN growth,” Proceeding of Optics and Photonics Taiwan ’01, Dec. 2001
  21. J. W. Shi, K. G. Gan, Y. J. Chiu, Y. H. Chen, C. K. Sun, Y. J. Yang, and J. Bowers, “Metal-semiconductor-metal traveling wave photodetectors,” IEEE Photon. Techon. Letters, vol. 16, pp. 623-625, Jun. 2001
  22. J. S. Hwang, L. C. Chen, K. H. Chen, F. H. Yang, Y. J. Yang, C. S. Chang, Y. F. Chen, T. H. Li, and L. G. Hwa, “Growth mode of oriented indium nitride platelets observed via lateral epitaxy,” Proceeding of 2001 Annual Meeting of the Physical Society of the Republic of China, Feb. 2001
  23. J. L. Yen, K. W. Wen, Y. J. Yang, C. Y. Lin, “P-type GaN formed by Mg diffusion using Mg3N2 as the Mg source,” 25th ICPS, 2001
  24. J. S. Hwang, C. H. Lee, F. H. Yang, K. H. Chen, L. G. Hwa, Y. J. Yang, L. C. Chen, “Resistive heated MOCVD deposition of InN films,” Materials Chemistry and Physics, pp. 3139, 2001
  25. C. C. Chen, S. J. Liaw, and Y. J. Yang, “Stable single-mode operation of an 850 nm VCSEL with a higher-order mode absorber formed by shallow Zn diffusion,” IEEE Photon. Technol. Lett., 13, pp. 266-268, 2001
  26. W.-S. Lour, M.-K. Tsai, K.-Y. Lai, B.-L. Chen, and Y.-J. Yang, “Studies and comparisons of a N+-InGaP/(P+)-InGaP/n-GaAs hetero-planar doped structure to high-linearity microwave field-effect transistors,” Semicond. Sci. Technol., 16, pp. 191-196, 2001
  27. W.-S. Lour, M.-K. Tsai, K.-C. Chen, Y.-W. Wu, S.-W. Tan and Y.-J. Yang, “Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing,” Semicond. Sci. Technol., 16, pp. 826-830, 2001
  28. Y. F. Hsiou, Y. J. Yang, L. Stobinski, Watson Kuo and C. D. Chen, “Coulomb blockade behavior in individual multiwalled carbon nanotubes with intratube tunnel junctions,” submitted to Journal of Applied Physics.

Conference & proceeding papers:

  1. T.-J. Hung, Jin-Wei Shi, J.-L. Yen, C.-H. Jiang, K.-M. Chen, and Ying-Jay Yang, “Vertical-Cavity Surface-Emitting Lasers (VCSELs) with High-Power and Single-Spot Far-Field Distributions at 850nm Wavelength by use of Petal-Shaped Light-Emitting Apertures,” 2005 Electron Devices and Materials Symposia, B-71, Kaohsiung, Taiwan, 2005
  2. T.-J. Hung, Jin-Wei Shi, J.-L. Yen, C.-H. Jiang, K.-M. Chen, and Ying-Jay Yang, “Vertical-Cavity Surface-Emitting Lasers (VCSELs) with High-Power and Single-Spot Far-Field Distributions at 850nm Wavelength by use of Petal-Shaped Light-Emitting Apertures,” 2005 Optics and Photonics Taiwan, A1N-20084, Tainan, Taiwan, 2005
  3. H. T. Young, Hung-Yi Huang and Ying-Jay Yang, “A fundamental modeling approach for nano-grinding of silicon wafers,” 2005 International Conference on Advanced Manufacture, Taipei, Taiwan, 2005
  4. Y.F. Hsiou, C. D. Chen, Y. J. Yang and L. Stobinski, “Controlled placement and electrical contact properties of individual multi-walled carbon nanotubes on silicon substrates,” The Annual Meeting of PSROC, paper MG-3, Hsinchu, Taiwan, 2004
  5. 19. Y. F. Hsiou, C. D. Chen, L. Stobinski, Y. J. Yang, and Ching-Hsu Chan, “Electrical Contact Properties of Carbon Nanotubes,” Taiwan International Conference on Nano Science and Technology, Hsinchu, Taiwa, 2004
  6. J. L. Yen, Y. J. Yang and C. Y. Lin, “Two-dimensional vertical-cavity surface-emitting laser array fabricated by zinc diffusion,” CLEO/Pacific Rim 2003, Taipei, Taiwan, Dec. 2003
  7. M. -K. Tsai, S.-W. Tan, W. S. Lour, and Y. J. Yang, “Observation of current gain collapse in large-area HBT with rectangular emitter and etched base,” ECS, State-of-the-art Program on Compound Semiconductors XXXVIII, Paris, France, May 2003
  8. Y.F. Hsiou, C. D. Chen, Y. J. Yang and L. Stobinski, “Controlled Placement and Electrical Contact Properties of Individual Multi-walled Carbon Nanotubes on Silicon Substrates,” The Annual Meeting of PSROC, Hualian, Taiwan, 2003
  9. 17. Y.F. Hsiou, Y.L. Zhong, Watson Kuo, C.D. Chen and Y. J. Yang, “Fabrication and Electrical transport properties of a multiwalled carbon nanotube on Silicon Chip,” 1st International Symposium on Active Nano-Characterization and Technology, paper P-75, Tsukuba, Japan, 2003
  10. 12. M.-K. Tsai, Y.-W. Wu, S.-W. Tan, M. Y. Chu, W. T. Chen, Y. J. Yang, and W.-S. Lour, “New InGaP/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors,” 29th International Symposium On Compound Semiconductors (ISCS 2002), Lausanne, Switzerland, Oct. 2002
  11. M.-K. Tsai and Y. J. Yang, “Improvements in direct-current characteristics of reduced turn-on voltage Al0.45Ga0.55As/GaAs digital graded superlattice-emitter heterojunction bipolar transistors by wet-oxidation,” ECS, State-of-the-art Program on Compound Semiconductors XXXVII, Salt Lake City, U. S. A, Oct. 2002
  12. 8. J. S. Hwang, Y. F. Chen, F. H. Yang, Y. J. Yang, C. T. Wu, K. H. Chen, T. H. Li, L. G. Hwa, and L. C. Chen, “Raman and photoluminescence study of indium nitride films,” 2001 Material Research Society Fall Meeting, Boston, USA, Nov. 2001
  13. C. C. Chen, S. J. Liaw, and Y. J. Yang, “Stable single-mode operation of an 850 nm VCSEL with a higher-order mode absorber formed by shallow Zn diffusion,” The Pacific Rim Conference on Laser and Electro-Optics, 2001 (CLEO/Pacific Rim ’01), Tokyo, Japan, Aug. 2001
  14. C. C. Chen, M. C. Hsu, J. R. Hsiao, J. L. Yen, and Y. J. Yang, “Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff,” The Pacific Rim Conference on Laser and Electro-Optics, 2001, (CLEO/Pacific Rim ’01), Tokyo, Japan, Aug. 2001
  15. C. C. Chen, J. L. Yen, and Y. J. Yang, “The effect of Mg diffusion on the contact resistance of low doped p-GaN,” The Pacific Rim Conference on Laser and Electro-Optics, 2001, (CLEO/Pacific Rim ’01), Tokyo, Japan, Aug. 2001
  16. C. C. Chen, J. L. Yen, and Y. J. Yang, “The effect of Mg diffusion on the contact resistance of low doped p-GaN,” Conference on Lasers and Electro-Optics (CLEO2001), Baltimore, U. S. A., May 2001
  17. J.-W. Shi, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, Y. J. Yang, and J. E. Bowers, “Ultrahigh bandwidth MSM traveling-wave photodetectors,” Conference on Lasers and Electro-Optics (CLEO2001), Baltimore, U. S. A., May 2001
  18. J.-W. Shi, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, Y. J. Yang, and J. E. Bowers, “Ultrahigh (400 GHz) bandwidth MSM traveling-wave photodetectors,” 2nd International Photonics Conference, Hsinchu, Taiwan, 2001
  19. J.-W. Shi, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, Y. J. Yang, and J. E. Bowers, “GaAs-based long-wavelength traveling-wave photodetector,” 2nd International Photonics Conference, Hsinchu, Taiwan, 2001
  20. W.-S. Lour, M.-K. Tsai, K.-C. Chen, Y.-W. Wu, S.-W. Tan and Y. J. Yang, “InGaP/InGaAs dual gate pseudomorphic high electron mobility transistors,” ECS, State-of-the-art Program on Compound Semiconductors XXXV, pp. 76-80, San Francisco, U. S. A., 2001
  21. W.-S. Lour, Y.-Y. Chen, M.-K. Tsai, and Y. J. Yang, “Energy levels in coupled quantum wells and the possible application in QWIP,” ECS, State-of-the-art Program on Compound Semiconductors XXXV, pp. 135-140, San Francisco, U.S.A., 2001
  22. 11. W.-S. Lour, M.-K. Tsai, K.-C. Chen, Y.-W. Wu, S.-W. Tan, and Y. J. Yang, “Sub-micron gate by optical lithography using photoresist re-flow and spin-on-glass,” ECS, State-of-the-art Program on Compound Semiconductors XXXV, pp. 154-157, San Francisco, U. S. A., 2001