Publication List of 林浩雄 Hao-Hsiung Lin

Journal articles & book chapters:

  1. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN,” International J. of Electrical Eng., vol. 16, no. 4, pp. 319-326, Aug. 2009
  2. Y. R. Lin, H. H. Lin, and J. H. Chu, “GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer,” Electronics lett., vol. 45, issue 13, pp. 682-683, Jun. 2009
  3. P. Sitarek, H. P. Hsu, Y. S. Huang, J. M. Lin, H. H. Lin, and K. K. Tiong, “Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures,” J. Appl. Phys., vol. 105, no. 12, 123523, Jun. 2009
  4. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures,” Appl. Phys. Lett., vol. 94, no. 22, 211906, Jun. 2009
  5. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,,” Phys. Stat. Sol. A, vol. 206, no. 5, pp. 830-835, May 2009
  6. Y. R. Lin, Y. F. Lai, C. P. Liu, and H. H. Lin, “GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer,” Appl. Phys. Lett., vol. 94, no. 11, 111106, Mar. 2009
  7. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Energy gap reduction in GaAsSbN,” Appl. Phys. Lett., vol 93, no. 17, 171914, Oct. 2008
  8. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics,” Appl. Phys. Lett., vol. 93, no. 12, 121903, Sept. 2008
  9. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai, “Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance,” Thin Solid Films, vol. 516, issue 22, pp. 8049-8058, Sept. 2008
  10. T. C. Lin, T. C. Ma and H. H. Lin, “Design and fabrication of AlGaAs ambient light detectors,” IEEE Photonic Tech. Lett., Vol. 20, No. 16, 1429-1431, Aug. 2008
  11. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence of InAs0.04P0.67Sb0.29,” J. Appl. Phys., Vol. 104, 023535, Jul. 2008
  12. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, J. Y. Wu, and S. D. Lin, “Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems,” J. Physics: Condensed Matter, Vol. 20, No. 9, 295223, Jul. 2008
  13. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy,” J. Appl. Phys., Vol. 103, 113508, Jun. 2008
  14. T. C. Ma, Y. T. Lin, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy,” J. of Crystal Growth, Vol. 310, 2854-2858, May 2008
  15. J. R. Lee, C. R. Lu, H. L. Liu, H. H. Lin, and L. W. Sung, “Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures,” Phys. Stat. Sol. (c), Vol. 5, No. 9, 3054-3056, May 2008
  16. T. S. Wang, J. T. Tsai, K. I. Lin, J. S. Hwang, H. H. Lin, and L. C. Chou, “Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells,” Materials Science and Engineering B, 147, 131-135, Feb. 2008
  17. C. Y. Chen, J. R. Lee, C. R. Lu, L. W. Sun, and H. H. Lin, “Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers,” J. Phys. and Chem. Solids, Vol. 69, 493-496, Feb. 2008
  18. C. H. Chan, C. H. Lee, Y. S. Huang, J. S. Wang, and H. H. Lin, “Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy,” J. Appl. Phys., Vol. 101, 103102, May 2007
  19. G. Tsai, D. L. Wang, C. E. Wu, C. J. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb quaternary alloy grown by gas source molecular beam epitaxy,” J. of Crystal Growth, Vol.301-302, pp.134-138, Apr. 2007
  20. Y. C. Wen, L. C. Chou, H. H. Lin, V. Gusev, K. H. Lin, and C. K. Sun, “Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects,” Appl. Phys. Lett., Vol. 90, 172102, Apr. 2007
  21. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai,, “Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy,” Appl. Phys. Lett., Vol. 90, 172106, Apr. 2007
  22. J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, L. S. Chang, J. I. Chyi, W. S. Liu, S. H. Chen, H. H. Lin, and P. W. Liu, “The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures,” Optics Express, Vol. 15, No. 8, pp. 5120-5125, Apr. 2007
  23. H. S. Fan, Y. S. Su, F. H. Chu, F. Y. Chang, H. H. Lin, and C. F. Lin, “Opposite temperature effects of quantum-dot laser under dual-wavelength operation,” Appl. Phys. Lett., Vol. 90, 181113, Apr. 2007
  24. C. H. Lin, W. W. Pai, F. Y. Chang, and H. H. Lin, “Comparative study of InAs quantum dots with different InGaAs capping methods,” Appl. Phys. Lett., 90, 063102, Feb. 2007
  25. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, H. H. Lin, and K. K. Tiong, “Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells,” Phys. Stat. Sol. (a), Vol. 204, No. 2, 430-438, Feb. 2007
  26. J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology, 18, 015401, Jan. 2007
  27. C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. T. Liang, D. R. Hang, and H. H. Lin, “An experimental study on Gamma(2) modular symmetry in the quantum Hall system with a small spin splitting,” J. Phys: Condens. Matter, 19, 026205, Jan. 2007
  28. T. T. Chen, C. L. Cheng, Y. F. Chen, F. Y. Chang, H. H. Lin, C. T. Wu, and C. H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies,” Phys. Review B, 75, 033310, Jan. 2007
  29. L. C. Chou, Y. R. Lin, C. T. Wan, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy,” Microelectronics Journal, 37, 1511-1514, Dec. 2006
  30. Y. C. Wen, K. H. Lin, T. F. Kao, L. C. Chou, H. H. Lin, and C. K. Sun, “Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics,” J. of Applied Phys., 100, 103516, Nov. 2006
  31. P. W. Liu, G. Tsai, H. H. Lin, A. Krier, Q. D. Zhuang, and M. Stone, “Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy,” Appl. Phys. Lett., 89, 201115, Nov. 2006
  32. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer,” Jpn. J. of Applied Phys., Vol. 45, No. 8A, 6271-6274, Aug. 2006
  33. A. Krier, M. Stone, Q. D. Zhuang, P. W. Liu, G. Tsai, and H. H. Lin, “Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes,” Appl. Phys. Lett., 89, 091110, Aug. 2006
  34. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, J. M. Lin, H. H. Lin, and K. K. Tiong, “Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells,” J. of Physics: Condensed Matter, Vol. 18, 5927-5935, Jul. 2006
  35. C. R. Lu, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, and L. W. Sung, “Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers,” J. of Physics and Chemistry of Solids, Vol. 66, 2082-2085, Nov. 2005
  36. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, Y. T. Lin, C. S. Wang, “Performance evaluation of field-enhanced p-channel split-gate flash memory,” IEEE Electron Device Lett., Vol 26(9), 670-672, Sept. 2005
  37. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih, and H. H. Lin, “Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents,” Appl. Phys. Lett., Vol. 87, 081908, Aug. 2005
  38. W. T. Chu, H. H. Lin, H. C. Sung, Y. H. Wang, Y. T. Lin, C. H. Wang, “Shrinkable triple self-aligned field-enhanced split-gate flash memory,” IEEE Trans. on Electron Device, Vol. 51 (10), 1667-1671, Oct. 2004
  39. W. T. Chu, H. H. Lin, W. L. Tu, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, C. S. Tsai and C. S. Wang, “Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory,” IEEE Electron Device Lett., EDL-25 (9), 616-618, Sept. 2004
  40. M.-H. Mao, T.-Y. Wu, D.-C. Wu, F.-Y. Chang, and H.-H. Lin, “Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers,” Optical and Quantum Electronics, Vol. 36 (10), 927-933, Aug. 2004
  41. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, and C. S. Wang, “High SCR design for one-transistor split-gate full-featured EEPROM,” IEEE Electron Device Lett., EDL-25 (7), 498-500, Jul. 2004
  42. T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, H. Hung, J. S. Wang, J. Y. Chi, D. K. Shih, and H. H. Lin, “Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy,” J. Vac. Sci. Technol. B, Vol. 22 (3), 1491-1494, Jun. 2004
  43. T. T. Chen, W. S. Su, Y. F. Chen, P. W. Liu, and H. H. Lin, “Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells,” Appl. Phys. Lett., Vol. 85 (9), 1526-1528, Jun. 2004
  44. Y.-M. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells,” Appl. Phys. Lett., Vol. 84 (14), 2548-2550, Apr. 2004
  45. D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen and H. H. Lin, “Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation,” Physica.E, 22, 308-311, Apr. 2004
  46. P. W. Liu, G. H. Liao, and H. H. Lin, “1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy,” Electronics Lett., Vol. 40 (3), 177-178, Feb. 2004
  47. F. Y. Chang, J. D. Lee, and H. H. Lin, “Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy,” Electronics Lett, Vol. 40 (3), 179-180, Feb. 2004
  48. C. M. Lai, F. Y. Chang, H. H. Lin, and G. J. Jan, “Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy,” Jpn. J. Appl. Phys, Vol. 43 (2), 735-738, Feb. 2004
  49. D. K. Shih, H. H. Lin, and Y. H. Lin, “Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applications,” IEE Proceedings – Optoelectronics, Vol. 150, No. 3, pp. 253-258, Jun. 2003
  50. C. M. Lai, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, and J. Lee, “Temperature dependence of photoreflectance in InAs/GaAs quantum dot,” Appl. Physics. Lett, Vol. 82, No. 22, pp. 3895-3897, Jun. 2003
  51. T. T. Chen, C. H. Chen, W. Z. Cheng, W. S. Su, M. H. Ya, Y. F. Chen, P. W. Liu, and H. H. Lin, “Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells,” J. Appl. Physics, Vol. 93, No.12, pp. 9655-9658, Jun. 2003
  52. L. W. Sung, and H. H. Lin, “Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers,” Appl. Physics. Lett, Vol. 83, No. 6, pp. 1107-1109, Jun. 2003
  53. G. R. Chen, H. H. Lin, J. S. Wang and D. K. Shih, “Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy,” J. Electronic Mat, Vol. 32, No. 4, pp. 244-248, Apr. 2003
  54. F. Y. Chang, C. C. Wu, and H. H. Lin, “Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers,” Appl. Physics. Lett, Vol. 82, No. 25, pp. 4477-4479, Apr. 2003
  55. D. K. Shih, H. H. Lin, L. W. Sung, T. Y. Chu, and T. R. Yang, “Band Gap Reduction in InAsN Alloys,” Jpn. J. Appl. Physic, Vol. 42, pp. 375-383, Feb. 2003
  56. J-S. Hwang, M-F. Chen, K-I Lin, C-N. Tsai, W-C. Hwang, W-Y.Chou, H. H. Lin, and M. C. Chen, “Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance,” Jpn. J. Appl. Phys, Vol. 42, pp. 5876-5879, Feb. 2003
  57. C. M. Lai, F. Y. Chang, H. H. Lin, an G. J. Jan, “A study of optical properties of InGaAs/GaAs quantum dots,” J. of the Korean Physical Society, Vol. 42, pp. S114-S119, 2003
  58. P. W. Liu, M. H. Lee, H. H. Lin, and J.-R. Chen, “Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy,” Electronics Lett, Vol. 38 (22), pp. 1355-1356, Oct. 2002
  59. Y. S. Chiu, M. H. Ma, W. S. Su, T. T. Chen, Y. F. Chen, and H. H. Lin, “Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb quantum wells induced by interface chemical bonds,” Appl. Physics. Lett, Vol. 81, No.26, pp. 4943-4945, Oct. 2002
  60. D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, and H. H. Lin, “Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well,” Semicond. Sci. Technol, 17, pp. 999-1003, Aug. 2002
  61. C. T. Lee, H. Y. Lee, and H. H. Lin, “Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers,” Jpn. J. Appl. Physic, Vol. 41, pp. 5937-5940, Jul. 2002
  62. Y. Y. Ke, M. H. Ya, Y. F. Chen, J. S. Wang, and H. H. Lin, “Photoluminescence study of hydrogen passivation in InAsxN1-x/InGaAs single quantum well on InP,” Appl. Phys. Lett, Vol. 80 (19), pp. 3539-3541, May 2002
  63. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” J. Crystal Growth, Vol. 241(3), pp. 320-324, Mar. 2002
  64. W. K. Hung, K. S. Cho, M. Y. Chem, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, “Nitrogen induced enhancement of the electron effective mass in InAsxN1-x,” Appl. Phys. Lett, Vol. 80 (5), pp. 796-799, Feb. 2002
  65. W. C. Wu, H. Wang, and H. H. Lin, “GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs,” Electronics Lett, Vol.38, No.4, pp. 185-186, Feb. 2002
  66. S. C. Yang, H. C. Chiu, Y.-J. Chan, H. H. Lin, J.-M. Kuo, “(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications,” IEEE Trans. on Electron Devices, Vol. 48 No. 12, pp. 2906-2910, Dec. 2001
  67. J. S. Wang, H. H. Lin, L. W. Sung, and G. R. Chen, “Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy,” J. Vac. Sci. Technol. B, Vol. 19(1), pp. 202-206, Oct. 2001
  68. Ding-Kang Shih, H. H. Lin, and Y. H. Lin, “InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m,” Electronics Lett, Vol. 37, No. 22, pp. 1342-1343, Oct. 2001
  69. H. C. Chiu, S. C. Yang, Y. J. Chan, and H. H. Lin, “High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs,” IEICE Trans. Electron., Vol. E84-C, No. 10, pp. 1312-1317, Oct. 2001
  70. G. R. Chen, H. H. Lin, J. S. Wang, and D. K. Shih, “Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells,” J. of Appl. Physics., Vol. 90, pp. 6230-6235, Sept. 2001
  71. C. H. Lee, Y. H. Chang, C. F. Huang, M. Y. Huang, H. H. Lin, and C. P. Lee, “Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells,” Chinese Journal of Physics, Vol. 39, No. 4, pp. 363-368, Aug. 2001
  72. R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, “Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice,” J. of Crystal Growth, Vol. 227, pp.1034-1038, Jul. 2001
  73. C. A. Chang, C. Z. Wu, P. Y. Wang, X. J. Guo, Y. T. Wu, C. Y. Liang, F. C. Hwang, W. C. Jiang, F. J. Lay, L. W. Sung, and H. H. Lin, “Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy,” J. of Crystal Growth, Vol. 225 (2-4), pp.550-555, May 2001
  74. C. F. Huang, Y. H. Chang, C. H. Lee, H. D. Yeh, C.-T. Liang, Y. F. Chen, H. H. Lin, H. H. Cheng, and G. J. Hwang, “Insulator-quantum Hall conductor transitions at low magnetic field,” Physical Review B, Vol. 65, No. 16, pp. 045303-1 –, May 2001
  75. C. T. Lee, K. C. Shyu, I. J. Lin, and H. H. Lin, “GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer,” Materials Science and Engineering, B74, pp. 147-150, Mar. 2000
  76. J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang, and H. H. Lin, “Mechanism for photoluminescence in an InyAs1–yN/InxGa1–xAs single quantum well,” Physical Review B, Vol. 62, No. 16, pp. 10990-10994, Jan. 2000
  77. J. S. Liu, J. S. Wang, K. Y. Hsieh, H. H. Lin, “Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy,” J. Crystal Growth, Vol. 206, pp. 15-22, 1999
  78. J. S. Wang and H. H. Lin, “Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy,” J. Vac. Sci. Technol. B, Vol. 17, pp. 1997-2000, 1999
  79. J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, and H. H. Lin, “Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance,” J. Appl. Phys, Vol. 86 (3), pp. 1460-1462, 1999
  80. K. T. Tsen, D. K. Ferry, J. S. Wang, C. S. Huang and H. H. Lin, “Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy,” Physica B: Condensed Matter, Volume 272, Issues 1-4, pp. 416-418, 1999

Conference & proceeding papers:

  1. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD,” 2009 International electron devices and materials symposia, B1-2, Taoyuan, Taiwan, Nov. 2009
  2. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence of InAsSb/InAsPSb quantum well,” 2009 International electron devices and materials symposia, B2-2, Taoyuan, Taiwan, Nov. 2009
  3. J. M. Lin, L. C. Chou, and H. H. Lin, “The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells,” 2009 International electron devices and materials symposia, GB24, Taoyuan, Taiwan, Nov. 2009
  4. H. H. Lin, “Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures,” 2009 International electron devices and materials symposia, B3-1, Taoyuan, Taiwan, Nov. 2009
  5. Y. T. Lin, T. C. Ma, and H. H. Lin, “A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species,” 2009 International electron devices and materials symposia, B3-2, Taoyuan, Taiwan, Nov. 2009
  6. T. C. Ma, and H. H. Lin, “Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy,” 2009 International electron devices and materials symposia, B3-4, Taoyuan, Taiwan, Nov. 2009
  7. T. C. Ma and H. H. Lin, “Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN,” MBE Taiwan 2009, S-8, Hualien, Taiwan, Jun. 2009
  8. Y. T. Lin, T. C. Ma, S. P. Wang, and H. H. Lin, “Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN,” MBE Taiwan 2009, S-14, Hualien, Taiwan, Jun. 2009
  9. C. J. Wu, G. Tsai, and H. H. Lin, “InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy,” Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN, S-15, Hualien, Taiwan, Jun. 2009
  10. Y. R. Lin, J. H. Chu, and H. H. Lin, “Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers,” International conference on optics and photonics in Taiwan (OPT’08), Sat-S17-01, Taipei, Taiwan, Dec. 2008
  11. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction,” International conference on optics and photonics in Taiwan (OPT’08), Sat-S40-03, Taipei, Taiwan, Dec. 2008
  12. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN,” 2008 International electron devices and materials symposia, B1-1, Taichung, Taiwan, Nov. 2008
  13. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Band structure of dilute nitride GaAsSbN,” 2008 International electron devices and materials symposia, B3-1, Taichung, Taiwan, Nov. 2008
  14. Y. C. Chou, G. Tsai, and H. H. Lin, “Photoluminescence study of InAsPSb epilayers grown on GaAs substrates,” 2008 International electron devices and materials symposia, B5-1, Taichung, Taiwan, Nov. 2008
  15. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics,” 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9), pp. 36-37, Freiburg, Germany, Sept. 2008
  16. C. J. Wu, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum wells,” 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9), pp. 42-43, Freiburg, Germany, Sept. 2008
  17. H. H. Lin, T. C. Ma, Y. T. Lin, C. K. Chen, and T. Y. Chen, “Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy,” Proceedings of MBE Taiwan 2008, pp. 24-25, Hsinchu, Taiwan, Jun. 2008
  18. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum well,” Proceedings of MBE Taiwan 2008, pp. 35-36, Hsinchu, Taiwan, Jun. 2008
  19. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN,” 20th International conference on InP and related materials, Paris, France, May 2008
  20. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “GaAsSbN/GaAs long wavelength PIN detectors,” 20th International conference on InP and related materials, Paris, France, May 2008
  21. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, and S. D. Lin, “Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure,” American Physical Society spring meeting 2008 (APS2008), New Orleans, Louisiana, U.S.A., Feb. 2008
  22. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m,” International electron devices and materials symposia, B1-4, Hsinchu, Taiwan, Dec. 2007
  23. L. C. Chou and H. H. Lin, “Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy,” International electron devices and materials symposia, B4-3, Hsinchu, Taiwan, Dec. 2007
  24. I. C. Chen, G. Tsai, and H. H. Lin, “Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10,” International electron devices and materials symposia, B4-5, Hsinchu, Taiwan, Dec. 2007
  25. Y. R. Lin and H. H. Lin, “Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors,” International electron devices and materials symposia, B4-6, Hsinchu, Taiwan, Dec. 2007
  26. Y. T. Lin, T. C. Ma, T. Y. Chen and H. H. Lin, “Effect of thermal annealing on the optical properties of GaAsSbN,” International electron devices and materials symposia, B4-2, Hsinchu, Taiwan, Dec. 2007
  27. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally,” OPT2007, Taichung, Taiwan, Dec. 2007
  28. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN bulk layers,” OPT2007, Taichung, Taiwan, Dec. 2007
  29. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy,” OPT2007, Taichung, Taiwan, Dec. 2007
  30. L. C. Chou and H. H. Lin, “[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy,” MBE Taiwan 2007, pp. 109-111, Kaohsiung, Taiwan, Jun. 2007
  31. T. C. Ma, T. Y. Chen, Y. T. Lin, and H. H. Lin, “Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates,” MBE Taiwan 2007, pp. 112-114, Kaohsiung, Taiwan, Jun. 2007
  32. T. C. Ma, Y. T. Lin, T. Y. Chen, L. C. Chou, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy,” 17th International conference on InP and related materials, Matsu, Japan, May 2007
  33. C. J. Wu, G. Tsai, D. L. Wang, and H. H. Lin, “InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy,” 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8), pp, 66-67, Bad Ischl, Austria, May 2007
  34. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy,” 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8), pp. 164-165, Bad Ischl, Austria, May 2007
  35. T. Y. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy,” International electron devices and materials symposia, PA-060, Tainan, Taiwan, Dec. 2006
  36. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Effects of thermal annealing on the energy gap of GaAsSbN,” International electron devices and materials symposia, OA-008, Tainan, Taiwan, Dec. 2006
  37. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy,” OPT2006, AO-11, Hsinchu, Taiwan, Dec. 2006
  38. Y. R. Lin, J. S. Wang, and H. H. Lin, “Electric vertically coupled quantum dots grown by molecular beam epitaxy,” OPT2006, AO-21, Hsinchu, Taiwan, Dec. 2006
  39. J. M. Lin, L. C. Chou, and H. H. Lin, “A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy,” OPT2006, AO-33, Hsinchu, Taiwan, Dec. 2006
  40. D. L. Wang, G. Tsai, C. J. Wu, C. E. Wu, F. Tseng, and H. H. Lin, “Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy,” OPT2006, AO-47, Hsinchu, Taiwan, Dec. 2006
  41. T. C. Ma, Y. T. Lin, T. Y. Chen, and H. H. Lin, “Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy,” OPT2006, AO-53, Hsinchu, Taiwan, Dec. 2006
  42. Y. C. Wen, L. C. Chou, H. H. Lin, K. H. Lin, C. Y. Chen, and C. K. Sun, “Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields,” OPT2006, CO-02, Hsinchu, Taiwan, Dec. 2006
  43. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy,” 14th international conference on molecular beam epitaxy (MBE2006), TUA2-6, Tokyo, Japan, Oct. 2006
  44. H. H. Lin, “MBE growth of quaternary InAsPSb alloy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  45. T. C. Ma, T. Y. Chen, S. K. Chang, Y. T. Lin, and H. H. Lin, “GaAsSbN grown on GaAs by gas source molecular beam epitaxy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  46. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  47. C. E. Wu, G. Tsai, and H. H. Lin, “Mid-infrared InAsPSb/InAsSb quantum-well light emitter,” MBE Taiwan 2006 and high K materials workshop, Chuli, Taiwan, Jun. 2006
  48. L. C. Chou, Y. R. Lin, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy,” 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS), Nottingham, UK, Apr. 2006
  49. G. Tsai and H. H. Lin, “Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy,” 17th Indium Phosphide and Related Materials, Glasgow, Scotland, 2005
  50. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih and H. H. Lin, “Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents,” 17th Indium Phosphide and Related Materials, Glasgow, Scotland, 2005
  51. H. H. Lin, P. W. Liu, C. L. Tsai, G. H. Liao, and J. Lin, “GaAsSb/GaAs quantum wells grown by MBE,” MBE Taiwan 2005, pp. 15-17, Hsinchu, Taiwan, 2005
  52. C. L. Tsai, P. W. Liu, G. H. Liao, M. H. Lee, and H. H. Lin, “Study on the band line-up of GaAsSb/GaAs quantum wells,” MBE Taiwan 2005, Hsinchu, Taiwan, 2005
  53. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum-dot laser,” MBE Taiwan 2005, pp. 15-17, Hsinchu, Taiwan, 2005
  54. G. Tsai and H. H. Lin, “InPSb bulk layers grown by gas source molecular beam epitaxy,” Mid-infrared optoelectronics: Materials and Devices (MIOMD 7), Lancaster, UK, 2005
  55. C. L. Tsai, C. T. Wan, P. W. Liu, G. H. Liao, and H. H. Lin, “Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers,” Proceedings of 2005 EDMS, B58, Kaohsiung, Taiwan, 2005
  56. P. W. Liu, G. Tsai, H. H. Lin, and T. Krier, “Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy,” OPT2005, A-FR-II 4-2, Tainan, Taiwan, 2005
  57. G. Tsai, and H. H. Lin, “Growth of InPSb on InAs inside a miscibility gap using gas source MBE,” OPT2005, A-FR-II 4-3, Tainan, Taiwan, 2005
  58. H. P. Hsu, Y. S. Huang, P.W. Liu, H. H. Lin, and K. K. Tiong, “Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells,” OPT2005, PA-FR1-089, Tainan, Taiwan, 2005
  59. C. Y. Chen, C. M. Lai, and H. H. Lin, “Numerical simulation on optical properties of GaN/AlN quantum dots,” OPT2005, PA-FR1-137, Tainan, Taiwan, 2005
  60. G. L. Wang, Y. S. Huang, H. H. Lin, and C. H. Chan, “The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well,” OPT2005, PA-FR1-196, Tainan, Taiwan, 2005
  61. H. H. Lin, P. W. Liu, G. H. Liao, and C. L. Tsai, “GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes,” Proceedings of MBE Taiwan, pp. 28-30, Kao-hsiung, Taiwan, May 2004
  62. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs quantum dots with light emission at 1.3 m,” Proceedings of MBE Taiwan, pp. 40-42, Kao-hsiung, Taiwan, May 2004
  63. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy,” Proceeding of 16th Indium Phosphide and Related Materials, Kogoshima, Japan, 2004
  64. G. Tsai, and H. H. Lin, “MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications,” OPT 2004, A-SA-II 4-2, Chung-Li, Taiwan, 2004
  65. 142. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Study on high-power resonant-cavity light-emitting diodes,” OPT 2004, A-SU-I 7-5, Chung-Li, Taiwan, 2004
  66. C. H. Yu, K. K. Kao, M. H. Mao, F. Y. Chang, and H. H. Lin, “Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection,” OPT 2004, A-SU-II 10-5, Chung-Li, Taiwan, 2004
  67. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm,” Proceedings of 2004 IEDMS, B3.3, pp. 289-29, Hsinchu, Taiwan, 2004
  68. G. H. Liao, C. L. Tsai, P. W. Liu, J. Lin, and H. H. Lin, “Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers,” Proceedings of 2004 IEDMS, B7.1, pp.471-474, Hsinchu, Taiwan, 2004
  69. F. Y. Chang, T. C. Wu, and H. H. Lin, “Effect of deposition method on the density of InAs/InGaAs quantum dot,” Proceeding of 15th Indium Phosphide and Related Materials, Santa Barbara, USA, 2003
  70. H. H. Lin, P. W. Liu, and J. R. Chen, “GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser,” Proceedings of the sixth Chinese optoelectronics symposium, pp. 112-115, Hong Kong, 2003
  71. M.-H. Mao, T.-Y. Wu, F.-Y. Chang, and H.-H. Lin, “1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 118-119, Tucson, USA, 2003
  72. H.-H. Lin, D.-K. Shih, Y.-H. Lin and K.-H. Chiang, “InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 806-807, Tucson, USA, 2003
  73. M.-H. Mao, D.-M. Yeh, P.-W. Liu, H.-H. Lin, H.-L. Chen and C.-T. Pan, “Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 1024-1025, Tucson, USA, 2003
  74. H. H. Lin, P. W. Liu, and G. H. Liao, “GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers,” Proceedings of electron devices and materials symposium, pp. I59-I62, Keelung, Taiwan, 2003
  75. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Resonant-cavity light-emitting diodes with coupled cavity,” Proceedings of electron devices and materials symposium, pp. 348-350, Keelung, Taiwan, 2003
  76. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy,” Proceedings of electron devices and materials symposium, pp. 491-494, Keelung, Taiwan, 2003
  77. Y. M. Chang, N. A. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures,” Proceedings of CLEO/Pacific Rim 2003, Vol. 2, pp. 481, Taipei, Taiwan, 2003
  78. C. L. Hsieh, T. M. Liu, M. C. Tien, C. K. Sun, L. W. Sung, and H. H. Lin, “Femtosecond carrier dynamics in InGaAsN single quantum well,” Proceedings of CLEO/Pacific Rim 2003, Vol. 1, pp. 83, Taipei, Taiwan, 2003
  79. G. Tsai, P. W. Liu, and H. H. Lin, “Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy,” Proceedings of OPT’03, Vol. 2, pp. 27-2, Taipei, Taiwan, 2003
  80. H. P. Hsu, Y. S. Huang, P. W. Liu, and H. H. Lin, “Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells,” Proceedings of OPT’03, Vol. 3, pp. 71-7, Taipei, Taiwan, 2003
  81. G. H. Liao, P. W. Liu, and H. H. Lin, “1.3m GaAsSb/GaAs single quantum well laser diode,” Proceedings of OPT’03, Vol. 3, pp. 274-, Taipei, Taiwan, 2003
  82. T. Y. Chu, H. H. Lin, and D. K. Shih, “Band gap reduction in InAsN alloy,” Proceeding of 14th Indium Phosphide and Related Materials, pp.253-256, Stockholm, Sweden, 2002
  83. P.-W. Liu, M.-H. Lee, and H. H. Lin, “Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser,” 15th Annual Meeting of IEEE Lasers and Electro-optics Society, Glasgow, Scotland, 2002
  84. T. M. Liu, M. C. Tien, J. W. Shi, C. K. Sun, L. W. Sung, H. H. Lin, B. R. Wu, and N. T. Yeh, “Femtosecond carrier dynamics in InGaAsN single quantum well,” Proceedings of OPT’02, pp. 16-18, Taipei, Taiwan, ROC, 2002
  85. L. W. Sung, G. Tsai, and H. H. Lin, “1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE,” Proceedings of OPT’02, pp. 142-144, Taipei, Taiwan, ROC, 2002
  86. D. K. Shih, H. H. Lin, and Y. F. Chen, “Structural properties and Raman modes of InAsN bulk films on (100) InP substrates,” Proceedings of OPT’02, pp. 361-363, Taipei, Taiwan, ROC, 2002
  87. L. W. Sung, G. Tsai, and H. H. Lin, “1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE,” Proceedings of 2002 IEDMS, pp. 37-40, Taipei, Taiwan, ROC, 2002
  88. D. K. Shih, H. H. Lin, and Y. F. Chen, “Raman scattering characterization of InAsN bulk film on (100) InP substrates,” Proceedings of 2002 IEDMS, pp. 43-46, Taipei, Taiwan, ROC, 2002
  89. P. W. Liu, M. H. Lee, J. R. Chen, and H. H. Lin, “Low-threshold ~1.3m GaAsSb quantum well laser,” Proceedings of 2002 IEDMS, pp. 125-128, Taipei, Taiwan, ROC, 2002
  90. F. Y. Chang, T. C. Wu, and H. H. Lin, “1.3m InAs/InGaAs quantum dot lasers grown by GSMBE,” Proceedings of 2002 IEDMS, pp. 236-239, Taipei, Taiwan, ROC, 2002
  91. C. M. Lai, F. Y. Chang, C. W. Chang, H. H. Lin, and G. J. Jan, “Optical characterization on InAs/GaAs quantum dots,” Proceedings of 2002 IEDMS, pp. 333-336, Taipei, Taiwan, ROC, 2002
  92. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “InAsN Grown by Plasma-assisted Gas Source MBE,” 2001 MRS Fall meeting, Symposium H, H2.5, Boston, USA, Nov. 2001
  93. D. K. Shih, H. H. Lin, L. W. Sung, and T. Y. Chu, “Bulk InAsN Films Grown by Plasma-Assisted Gas Source Molecular Beam Epitaxy,” Proceeding of 13th Indium Phosphide and Related Materials, pp.555-558, Nara, Japan, 2001
  94. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE,” Middle Infrared Coherent Sources MICS’01 International Workshop, St. Petersburg, Russia, 2001
  95. L. W. Sung, H. H. Lin, and C. T. Chia, “V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE,” 2001 MRS Fall Meeting, I3.22, Boston, MA, USA, 2001
  96. M. H. Lee, P. W. Liu, and H. H. Lin, “Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well,” 2001 Electron Devices and Materials Symposia, WB1-4, pp. 118-1, KaoHsiung, Taiwan, ROC, 2001
  97. T. Y. Chu, D. K. Shih, and H. H. Lin, “On the InAs(N)/InGaAs quantum wells,” 2001 Electronics Devices and Materials Symposia, WB1-6, pp.126-12, Kaohsiung, Taiwan, ROC, 2001
  98. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE,” Proceeding of Optics and Photonics Taiwan, TA3-1, pp. 41-43, Kaohsiung, Taiwan, ROC, 2001
  99. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE,” Proceeding of Optics and Photonics Taiwan’01, pp. 379-381, Kaohsiung, Taiwan, ROC, 2001
  100. P. W. Liu and H. H. Lin, “Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well,” Proceeding of Optics and Photonics Taiwan '01, pp. 441-443, Kaohsiung, Taiwan, ROC, 2001
  101. W. C. Wu, H. Wang, and H. H. Lin, “A fully integrated broadband amplifier with 161% 3-db bandwidth,” Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific, Vol. 1, pp. 291-, Taiwan, ROC, 2001
  102. H. C. Chiu, S. C. Yang, C. K. Lin, Y. J. Chan, and H. H. Lin, “In0.49Ga0.51P/ In0.15Ga0.85As doped-channel HFETs with low parasitic resistance by inserting a Si-doped layer,” 2000 topical workshop on heterostructure microelectronics, Nagoya, Aug. 2000
  103. S.C. Yang, S.C. Chiou, Y.-J. Chan, and H. H. Lin, “Selectively dry-etched In0.49Ga0.51P/In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma,” 12th international conference on InP and related material, Williamsburg, Virginia, USA, May 2000
  104. J. S. Wang, H. H. Lin, L. W. Sung and G. R. Chen, “Growth and characterization of InAsN alloys,” 12th international conference on InP and related material, Williamsburg, Virginia, USA, May 2000
  105. H. H. Lin, “InAsN grown by gas source molecular beam epitaxy,” The 4th Seminar on Science and Technology (ROC-Japan Exchange Program) -- Conference on Nitride Semiconductor Materials and Devi, Tokyo, Japan, Mar. 2000
  106. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” International Photonics Conference 2000, pp. 208-211, Hsinchu, Taiwan, 2000
  107. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy,” International Photonics Conference 2000, pp. 212-216, Hsinchu, Taiwan, 2000
  108. D. K. Shih and H. H. Lin, “InAsN grown by GSMBE,” 2000 International Electron Devices and Materials Symposia, pp. 62-65, Chung-Li, Taiwan, 2000
  109. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” 2000 International Electron Devices and Materials Symposia, pp. 66-69, Chung-Li, Taiwan, 2000
  110. F. Y. Chang and H. H. Lin, “Anomalous photoluminescence of InGaP/GaAs quantum well grown by GSMBE,” 2000 International Electron Devices and Materials Symposia, pp. 99-102, Chung-Li, Taiwan, 2000
  111. C. W. Liu, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin, “Light emission and detection by metal oxide silicon tunneling diodes,” 1999 IEDM, Washington D. C., USA, Dec. 1999
  112. J. S. Wang, H. H. Lin, L. W. Sung, “InAsN quantum wells grown on InP by gas source MBE,” 3rd international conference on mid-infrared optoelectronics materials and devices, O21, Aachen, Germany, 1999
  113. L. W. Sung, J. S. Wang, H. P. Shiao, C. Y. Wang, I. F. Jang, T. T. Shih, Y. K. Tu, and H. H. Lin, “1.55m asymmetric coupled quantum well structure for laser-modulator integration,” 1999 Electron Devices and Materials Symposia, 3D04, Taoyuan, Taiwan, ROC, 1999
  114. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy,” 1999 Electron Devices and Materials Symposia, 1C05, Taoyuan, Taiwan, ROC, 1999
  115. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy,” Optics and Photonics/Taiwan'99, FR-III4-A-4, Chung-Li, ROC, 1999
  116. G. R. Chen, J. S. Wang, and H. H. Lin, “Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells,” Optics and Photonics/Taiwan'99, Chung-Li, FR-I6-A-8, ROC, 1999

Patents:

  1. H. H. Lin, T. C. Ma, Y. R. Lin, J. P. Wang, and C. H. Huang, “Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye,” U. S. Patent No. 7,538,406, May 2009
  2. 林浩雄、馬大鈞、吳俊逸, “類人眼之光偵測器,” 中華民國發明專利，專利證書號： 287877, Oct. 2007
  3. 邱煥凱、林浩雄, “集總常數補償式高低通平衡至不平衡轉換器,” 中華民國發明專利，No. 139060, Jul. 2001
  4. 洪儒菘、林浩雄, “背靠背式雙波長半導體雷射元件,” 中華民國發明專利，No. 135640, Jun. 2001
  5. H. K. Chiou and H. H. Lin, “Lumped constant compensated high/low pass balanced-to-unbalanced transition,” U. S. Patent No. 6052039, Apr. 2000
  6. 林浩雄、馬大鈞、林佑儒、王俊評、黃正宏, “環境光偵測器,” 中華民國發明專利，公開號：200832687