Publication List of 馮哲川 Zhe-Chuan Feng

Journal articles & book chapters:

  1. Yueh-Chien Lee, Sheng-Yao Hu, Walter Water, Kwong-Kau Tiong, Zhe-Chuan Feng, Yen-Ting Chen, Jen-Ching Huang, Jyh-Wei Lee, Chia-Chih Huang, Jyi-Lai Shen, Mou-Hong Cheng, “Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates,” Journal of Luminescence, 129, 148-152, Feb. 2009
  2. H.C. Lin, Z.C. Feng, M.S. Chen, Z.X. Shen, I.T. Ferguson, W. Lu, “Raman Scattering Study on Anisotropic Property of Wurtzite GaN,” Journal of Applied Physics, 105, 036102-4, Jan. 2009
  3. Zhe Chuan Feng, Jer-Ren Yang, Alan Gang Li, Ian T. Ferguson, “Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” book III-Nitride Devices and NanoEngineering, Chapter 3, pp57-88, Oct. 2008
  4. Nola Li, Shen-Jie Wang, Chung-Lung Huang, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Christopher Summers and Ian Ferguson, “Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor phase deposition,” Journal of Crystal Growth, Vol. 310, p. 4908-12, Aug. 2008
  5. Z. C. Feng, S. C. Lien, J. H. Zhao, X. W. Sun and W. Lu, “Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films,” Thin Solid Film, 516, 5217-5226, 2008
  6. S. Sun, G. S. Tompa, C. Rice, X. W. Sun, Z. S. Lee, S. C. Lien, C. W. Huang, L. C. Cheng and Z. C. Feng, “Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire,” Thin Solid Film, 516, 5572-5277, 2008
  7. Z. C. Feng, F. C. Hou, J. B. Webb, Z. X. Shen, E. Rusli, I. T. Ferguson and W. Lu, “Optical Investigation of GaSb Thin Films Grown on GaAs by Metalorganic Magnetron Sputtering,” Thin Solid Film, 516, 5493-5497, 2008
  8. Ling Min Kong, Zhe Chuan Feng, Zheng Yun Wu and and Weijie Lu, “Emission dynamics of InAs self-assembled quantum dots with different cap layer structures,” Semiconductor Sci. & Technol., 23, 075044-8, 2008
  9. J. Chen, S. C. Lien, Y. C. Shin, Z. C. Feng, C. H. Kuan, J. H. Zhao and W. J. Lu, “Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer,” Materials Science Forum, Vol. 600-601, 39-42, 2008
  10. Z. C. Feng, C. Tran, I. T. Ferguson and J. H. Zhao, “Material Properties of GaN Films Grown on SiC/SOI Substrate,” Materials Science Forum, Vol.600-601, 1313-1316, 2008
  11. Shen-Jie Wang, Nola Li, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Matthew Kane, Chris Summers, and Ian Ferguson, “MOCVD growth of GaN-based materials on ZnO Substrates,” Physica Status Solidi (c), Vol.5, 1736-1739, 2008
  12. K. Y. Lo, Y. J. Huang, J. Y. Huang, Z. C. Feng, W. E. Fenwick, M. Pan and I. T. Ferguson, “Reflective Second Harmonic Generation from ZnO thin films: A study on the Zn-O bonding,” Appl. Phys. Lett., 90, 161904, 2007
  13. H.L. Tsai, T.Y. Wang, J.R. Yang, C.C. Chuo, J.T. Hsu, Z.C. Feng and M. Shiojiri, “Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers,” Materials Transactions, 48， No. 5, 894-8, 2007
  14. L.M. Kong, Z.Y. Wu, Z.C. Feng and I.T. Ferguson, “Photoluminescence Characteristics of InAs self-assembled Quantum dots in InGaAs/GaAs Quantum well,” J. Appl. Phys., 101, 126101, 2007
  15. S. J. Wang, Nola Li, E. H. Park, Z. C. Feng, A. Valencia, J. Nause and I. T. Ferguson, “Metalorganic Chemical Vapor Deposition of InGaN Layers on ZnO Substrates,” J. Appl. Phys., 102, 106105, 2007
  16. Z.C. Feng, J.H. Chen, A.G Li, and L.C. Chen, “Optical Spectroscopic Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diode wafer Grown on Sapphire by Metalorganic chemical Vapor deposition,” J. Physics: Conf. Ser., 28, 42-47, 2006
  17. J. Zhao, J. Chen, Z.C. Feng, J.L. Chen, R. Liu & G. Xu, “Band-gap Blue Shift of InGaAs/InP Multiple Quantum Wells by Different Dielectric Film Coating and Annealing,” Thin Solid Films, 498, 179-182, 2006
  18. Z.C. Feng, J.W. Yu, J. Zhao, T.R. Yang, R.P.G. Karunasiri, W. Lu and W.E. Collins, “Optical and materials properties of Sandwiched Si/SiGe/Si Heterostructures,” Surface and Coating Technology, 200, 3265-3269, 2006
  19. L.M. Kong, J.F. Cai, Z.Y. Wu, Z. Gong, Z.C. Niu & Z.C. Feng, “Time-resolved Photoluminescence Spectra of Self-assembled InAs/GaAs Quantum Dots,” Thin Solid Films, 498, 188-192, 2006
  20. Z.C. Feng, J.W. Yu, K. Li, Y.P. Feng, K.R. Padmanabhan, and T.R. Yang, “Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile,” Surface and Coating Technology, 200, 3254-3260, 2006
  21. J.H. Chen, Z.C. Feng, H.L. Tsai, J.R. Yang, P. Li, C. Wetzel, T. Detchprohm and J. Nelson, “Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition”,” Thin Solid Films, 498, 123-127, 2006
  22. J. Zhao, Z.C. Feng, Y.C. Wang, J.C. Deng & G. Xu, “Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering,” Surface and Coating Technology, 200, 3245-3249, 2006
  23. T.R. Yang, J.B. Wang & Z.C. Feng, “Optical and Transport Properties of InSb Thin Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” Thin Solid Films, 498, 158-162, 2006
  24. Z.C. Feng , H.C. Lin, W. Lu, W.E. Collins & I. Ferguson, “Surface and optical properties of AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” Thin Solid Films, 498, 167-173, 2006
  25. Z.C. Feng, W. Liu, S.J. Chua, J.W. Yu, C.C. Yang, T.R. Yang & J. Zhao, “Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Thin Solid Films, 498, 118-122, 2006
  26. W. Tong, M. Harris, B.K. Wagner, J.W. Yu, H.C. Lin and Z.C. Feng, “Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates,” Surface and Coating Technology, 200, 3230-3234, 2006
  27. Z.C. Feng, J.W. Yu, K. Li, Y.P. Feng, K.R. Padmanabhan, and T.R. Yang, “Combined optical, surface and nuclear microscopic incestigation of porous silicon formed in HF-acetonitrile,” Surface and Coating Technology, 200, 3254-3260, 2006
  28. Z.C. Feng, K. Li, Y.T. Hou, J. Zhao, W. Lu & W.E. Collins, “A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Surface and Coating Technology, 200, 3224-3229, 2006
  29. J.W. Yu, H.C. Lin, Z.C. Feng, L.S. Wang & S.J. Chua, “Control and Improvement of Crystalline Cracking from GaN Thin films grown on Si by Metal-organic Chemical Vapor Deposition,” Thin Solid Films, 498, 108-112, 2006
  30. Z.C. Feng, “Optical Properties of Cubic SiC Grown on Si substrate by Chemical Vapor Deposition,” Microelectronic Engineering, 83, 165-169, 2006
  31. J.H. Chen, Z.C. Feng, J.C. Wang , H.L. Tsai, J.R. Yang, A. Parekh, E. Armour, and P. Faniano, “Study of carrier localization in InGaN/GaN quantum well blue light emitting diode structures,” Journal of Crystal Growth, 287, 354-358, 2006
  32. Z.C. Feng, A.T.S. Wee and S.Y. Hung, “Properties of the CdTe/InSb Interface Studied by Optical and Surface Analytical Techniques,” Phys. Stat. Sol. (a), 203, 2181-5, 2006
  33. H.C. Lin, Z.C. Feng, M.S. Chen, Z.X. Shen, W. Lu and W.E. Collins, “Anisotropic Properties of GaN Studied by Raman Scattering,” Mat. Sci. Forum, 527-529, 1517-20, 2006
  34. Z.C. Feng, J.W. Yu, J.B. Wang, R. Varatharajan, B. Nemeth, J. Nause, I. Ferguson, W. Lu and W.E. Collins, “Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique,” Mat. Sci. Forum, 527-529, 1567-70, 2006
  35. Z.C. Feng, W.Y. Chang, J. Lin, C.C. Tin, W. Lu and W.E. Collins, “Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition,” Mat. Sci. Forum, 527-529, 695-8, 2006
  36. Z.C. Feng, J.W. Yu, W.Y. Chang and J. Li, “Photoluminescence Spectral Features of CdTe on InSb Grown by Molecular Beam Epitaxy,” Journal of Taiwan Vacuum Society, 18, 55-58, 2005
  37. W. Tong, M. Harris, B.K. Wagner, J.W. Yu, H.C. Lin and Z.C. Feng, “Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates,” Journal of Taiwan Vacuum Society, 18, 100-104, 2005
  38. Z.C. Feng, Y.J. Sun, L.S. Tan, S.J. Chua, J.W. Yu, J.H. Chen, C.C. Yang, W. Lu & W.E. Collins, “P-type doping in GaN through Be implantation,” Phys. Stat. Solidi (c), 2, 2415-1419, 2005
  39. Z.C. Feng, W. Liu, S.J. Chua, J.H. Chen, C.C. Yang, W. Lu & W.E. Collins, “Recombination Mechanism of InGaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition,” Phys. Stat. Solidi (c), 2, 2377-2380, 2005
  40. Z.C. Feng, “Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition,” book"SiC Power Materials-Devices and Application", chapter 8, 209-276, 2004
  41. K. Li, Z.C. Feng, C.C. Yang & J. Lin, “Surface Chemical Status of Heteroepitaxial Nitride Films on Sapphire by Metalorganic Chemical Vapor Deposition,” International Journal of Nanoscience, 3, 655-661, 2004
  42. D.N. Talwar and Z.C. Feng, “Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by modeling and simulation,” Computational Materials Science, 30, 419-424, 2004
  43. Z.C. Feng, J.H. Chen, J. Zhao, T.R. Yang & A. Erbil, “Raman scattering of ferroelectric lead lanthanum titanate thin films grown on fused quartz by metalorganic chemical vapor deposition,” Ceramics International, 30, 1561-1564, 2004
  44. Y.C. Cheng, C.M. Wu, H.S. Chen, C.C. Yang, Z.C. Feng, G. A. Li, J.R. Yang, A. Rosenauer & K.J. Ma, “Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers,” Applied Physic Letters, 84, 5422-5424, 2004
  45. (127) T.R. Yang, M.M. Dvoynenko, Z.C. Feng and H.H. Cheng, “Raman spectroscopy of self-assembled Ge islands on Si,” Europe Physics Journal B, 31, 41-45, 2003
  46. Z.C. Feng,, “Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Optical Engineering, 41, 2022-2031, 2002
  47. Z.C. Feng, T.R. Yang, R. Liu & A.T.S. Wee, “Crystalline phase separation in InGaN layer materials prepared by metalorganic chemical vapor deposition,” Intenational Journal of Modern Physics B, 16, 268-274, 2002
  48. W.Y. Cheng, Z.C. Feng, J. Lin, F. Yan & J.H. Zhao, “Surface and interface properties of ion implanted 4H-SiC,” Intenational Journal of Modern Physics B, 16, 151-158, 2002
  49. Z.C. Feng, F. Yan, W.Y. Chang, J.H. Zhao, & J. Lin, “Optical characterization of ion implanted 4H-SiC,” Mater Sci. Forum, 389-393, 637-650, 2002
  50. W. Chang, Z.C. Feng, J. Lin, R. Liu, A.T.S. Wee, K. Tone & J.h. Zhao, “Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC,” Surf. & Interface Analysis, 33, 500-505, 2002
  51. Z.C. Feng, X. Chang, S.J. Chua, T.R.Yang, J.C. Deng, G. Xu, “Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition,” Thin Solid Films, 409, 15-22, 2002
  52. Z.C. Feng, T.R. Yang, R. Liu & A.T.S. Wee, “Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition,” Materials Science in Semiconductor Processing, 5, 39-43, 2002
  53. T.R. Yang, M.M. Dvoynenko, Y.F. Chang & Z.C. Feng, “Far-IR investigatuon of thin InGaN layers,” Phys. Rev. Latt. B, 324, 268-278, 2002
  54. J.H. Zhao, P. Alexandrov, L. Fursin, Z.C. Feng & M. Weiner, “High performance 1500 V4H-SiC junction barrier Schottky diodes,” Electronics Lett., 38, 1389-90, 2002
  55. I. Ferguson, A. G. Thompson, S. A. Barnett, F. H. Long & Z.C. Feng, “Epitaxial Film Growth and Characterization,” a book chapter, in Thin Films (Vol. 28), Frontiers of Thin Film Technology (pp. 1-69), ed. M. Francombe and C. E. C. Wood, 2001
  56. D.G. Chtchekine, Z.C. Feng, S. J. Chua & G.D. Gilliland, “Temperature-varied photoluminescence and magnetospectroscopy of near-bandedge emissions in GaN,” Phys. Rev. B, 63, 125211-125217, 2001
  57. G. Xu, Z.C. Feng, Z. Popovic, J.Y. Lin & J.J. Vittal, “Nanotube structure revealed by high resolution X-ray diffraction,” Advanced Materials, 13, 264-267, 2001
  58. X. Zhang, Y.T. Hou, Z.C. Feng, “Infrared reflectance study of GaN films grown on Si(001) substrates,” J. Appl. Phys, 89, 6165-6170, 2001
  59. Y. Wang, J. Lin, C.H. Huan, Z.C. Feng & S.J. Chua, “Photoluminescence in hydrogenated amorphous silicon carbide,” Thin Solid Films, 384, 173-176, 2001
  60. Y. Wang, J. Lin, C.H. Huan, Z.C. Feng & S.J. Chua, “Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film,” Diamond and Related Materials, 10, 1268-1272, 2001
  61. Y.P. Guo, J.C. Zheng, A.T.S. Wee, C.H. Huan, K. Li, J.S. Pan, Z.C. Feng & S.J. Chua, “Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix,” Chem. Phys. Lett, 339, 319-322, 2001
  62. Z.C. Feng, W. Wang, S.J. Chua, P. Zhang, K.P.J. Williams & G.D. Pitt, “Raman scattering properties of GaN materials and structures under visible and ultraviolet excitations,” J. of Raman Spectroscopy, 32, 840-846, 2001
  63. W. Chang, J. Lin, W. Zhou, S.J. Chua & Z.C. Feng, “Photoluminescence and photoelectron spectroscopy analysis of InGaAsN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett, 79, 4497-4499, 2001
  64. Z.C. Feng, S.J. Chua, G.A. Evans, J.W. Steeds, K.P.J. Williams & G.D. Pitt, “Micro-Raman and Photoluminescence Study on n-type 6H-SiC,” Materials Science Forum, 353-356, 345-348, 2001
  65. Z.C. Feng, T.R. Yang & Y.T. Hou, “Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates,” Materials Science in Semiconductor Processing, 16, 571-576, 2001
  66. G. Xu and Z.C. Feng,, “Internal atomic distortion and layer roughness of epitaxial SiC thin films studied by short wavelength x-ray diffraction,” Phys. Rev. Lett., 84, 1926-1929, 2000
  67. W.S. Li, Z.X. Shen, Z.C. Feng & S.J. Chua, “Temperature dependence of Raman scattering in the hexagonal gallium nitride,” J. Appl. Phys., 87, 3332-3337, 2000
  68. (101) Y.T. Hou, Z.C. Feng, J. Chen, X. Zhang, S.J. Chua & J.Y. Lin, “Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates,” Solid State Commun., 115, 45-49, 2000
  69. Y. Wang, J. Lin, Z.C. Feng, S.J. Chua & C.H. Huan, “Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si,” Mat. Sci. Forum, 338-342, 325-328, 2000
  70. G. Xu & Z.C. Feng, “High order X-ray diffraction and internal atomic layer roughness of epitaxial SiC thin films,” Mat. Sci. Forum, 338-342, 501-504, 2000
  71. Z.C. Feng, S.J. Chua, Z.X. Shen, K. Tone & J.H. Zhao, “Microscopic probing of Raman scattering and photoluminescence on C-Al ion co-implanted 6H-SiC,” Mat. Sci. Forum, 338-342, 659-662, 2000
  72. (105) I. Ferguson, A. G. Thompson, S. A. Barnett, F. H. Long & Z.C. Feng, “Epitaxial Film Growth and Characterization,” book"Handbook of Thin Film Devices" & "Hetero-Structures for High Performance Devices", Vol. 1, 1-53, 2000
  73. Y.S. Huang, W.D. Sun, L. Malikova, F.H. Pollak, I. Ferguson, H. Hou, Z.C. Feng, T. Ryuan & E.B. Fantner, “Room temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side-doped GaAlAs/InGaAs high electron mobility transistor structure,” Appl. Phys. Lett, 74, 1851-1853, 1999
  74. J.C. Burton, L. Sun, F.H. Long, Z.C. Feng & I. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H-SiC,” Phys. Rev. B, 59, 7282-7284, 1999
  75. Z.C. Feng, E. Armour, I. Ferguson, R.A. Stall, L. Malikova, T. Holden, J.Z. Wan, F.H. Pollak & M. Pavlosky, “Non-destructive assessment of In0.5(Ga1-xAlx)0.5P films grown on GaAs by low pressure metalorganic chemical vapore deposition,” J. Appl. Phys., 85, 3824-3831, 1999
  76. X. Zhang, S. J. Chua, C. Poon, P. Li & Z.C. Feng, “Enhanced optical emission from GaN films grown on a silicon substrate,” Appl. Phys. Lett., 74, 1984-1987, 1999
  77. Z. C. Feng, S. J. Chua, K. Tone & J. H. Zhao, “Recrystallization of C-Al Ion Co-implanted Epitaxial 6H-SiC,” Appl. Phys. Lett., 75, 472-474, 1999
  78. G. Li, S. J. Chua, J.H. Teng, W. Wang, Z.C. Feng, Y.H. Huang & T. Osipowicz, “Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by ropid thermal annealing,” J. Vac. Sci. Technol. B, 17, 1507-1511, 1999
  79. Y.T. Hou, Z.C. Feng, S.J. Chua, M.F. Li, N. Akutsu & K. Matsumoto, “Influence of Si-doping on the characteristics of GaN on sapphire by infrared reflectance,” Appl. Phys. Lett., 75, 3117-3119, 1999
  80. D.G. Chtchekine, Z.C. Feng, G.D. Gilliland, S.J. Chua & D. Wolford, “A donor-hydrogen bound exciton in epitaxial GaN,” Phys. Rev. B, 60, 15980-15984, 1999
  81. T.R. Yang, C.C. Lu, W.C. Chou, Z.C. Feng & S.J. Chua, “Infrared and Raman spectroscopic study of ZnMnSe materials grown by molecular beam epitaxy,” Phys. Rev. B, 60, 16058-16064, 1999
  82. W. Liu, Z.C. Feng, M.F. Li, S.J. Chua, N. Akutsu & K. Matsumoto, "Material properties of GaN grown by MOCVD, “Material properties of GaN grown by MOCVD,” Surface & Interface Analysis, 28, 150-154, 1999
  83. Y.T. Hou, Z.C. Feng, M.F. Li & S.J. Chua, “Characterization of MBE grown Ga1-xAlxAs alloy films by Raman scattering,” Surface & Interface Analysis, 28, 163-165, 1999
  84. Z.C. Feng, Y.T. Hou, S.J. Chua & M.F. Li, “Infrared reflectance studies of GaN epitaxial films on sapphire substrate,” Surface & Interface Analysis, 28, 166-169, 1999
  85. W.S. Li, Z.X. Shen, Z.C. Feng & S.J. Chua, “Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K,” Surface & Interface Analysis, 28, 173-176, 1999
  86. K. Li, A.T.S. Wee, J. Lin, Z.C. Feng & E.W.P. Lau, “Compositional and morphological analysis of InxGa1-xN/GaN epilayers,” Surface & Interface Analysis, 28, 181-185, 1999
  87. Z.C. Feng, Y.T. Hou, M.F. Li, S.J. Chua, W. Wang, and L. Zhu, “Infrared reflectance investigation of un-doped and Si-doped GaN films on sapphire,” Physica Status Solidi (b), 216, 577-580, 1999
  88. X. Zhang, S.J. Chua, Z.C. Feng, J. Chen, and J. Lin, “MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate,” Phys. Stat. Sol. (a), 176, 605-609, 1999
  89. F. Long, M. Pophristic, C. Tran, R.F. Kalicek Jr, Z.C. Feng & I. Ferguson, “Time-resolved laser spectroscopy of nitride semiconductors,” Materials Science & Engineering B, 59, 147-149, 1999
  90. W. Krystek, F.H. Pollak, Z.C. Feng, M. Schurman & R.A. Stall, “Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance,” Appl. Phys. Lett., 72, 1353-55, 1998
  91. W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M. Schurman, Z.C. Feng, R.A. Stall & B. Goldenberg, “Near-band-edge photoluminescence emission in AlxGa1-xN under high pressure,” Appl. Phys. Lett., 72, 2274-2276, 1998
  92. Z.C. Feng, I. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, K. Tone, J.H. Zhao, A.T.S. Wee, K.L. Tan, F. Adar & B. Lenain, “Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques,” Materials Science Forum, 264-268, 693-696, 1998
  93. Z.C. Feng, M. Schurman, C. Tran, T. Salagaj, B. Karlicek, I. Ferguson, R.A. Stall, C.D. Dyer, K.P.J. Williams & G.D. Pitt,, “Photoluminescence and Raman Scattering characterization of GaN, InGaN and AlGaN films using a UV Excitation Raman-Photoluminescence microscope,” Materials Science Forum, 264-268, 1359-1362, 1998
  94. I. Ferguson, S. Liang, C. A. Tran, R. F. Karlicek, Z.C. Feng, Y. Lu & C. Joseph, “Breakdown mechanisms in Al(GaN) MSM photodetechtors, “Materials Science Forum,” Materials Science Forum, 264-268, 1437-1440, 1998
  95. I.T. Ferguson, C. Beckman, Z.C. Feng, A.G. Thompson, R. Stall, H.Q. Hou, K. Seipel, S.W. Chen & L. Aina, “MOCVD growth of high power 0.5W 35GHz MMICs,” J. Crystal Growth, 195, 648-654, 1998
  96. M. Pophristic, F.H. Long, C.A. Tran, R.F. Karlicek, Z.C. Feng & I. Ferguson, “Time-resolved spectroscopy of InxGa1-xN multiple quantum wells at room temperature,” Appl. Phys. Lett., 73, 815-817, 1998
  97. W. Shan, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M. D. McCluskey, N. M. Johnson, Z.C. Feng, M. Schurman & R.A. Stall, “Optical properties of InxGa1-xN grown by metalorganic chemical vapor deposition,” J. Appl. Phys., 84, 4452-4458, 1998
  98. J.C. Burton, L. Sun, M. Pophristic, F.H. Long, Z.C. Feng & I. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys., 84, 6268-6273, 1998
  99. Z.C. Feng, M. Schurman, R.A. Stall, M. Pavloski & A. Whitley, “Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metalorganic chemical vapor deposition,” Appl. Optics, 36, 2917-2922, 1997
  100. Z.C. Feng, M. Schurman & R.A. Stall, “How to distinguish the Raman modes of epitaxial GaN with phonon features from sapphire substrate,” J. Vac. Sci. Technol. A, 15, 2428-2430, 1997
  101. K. Li, A.T.S. Wee, J. Lin, K.L. Tan, L. Zhou, S.F.Y. Li, Z.C. Feng, H.C. Chou, S. Kamra & A. Rohatgi, “Several Efficiency Influencing Factors in CdTe/CdS Thin Film Solar Cells,” J. Materials Science: Materials in Electronics, 8, 125-132, 1997
  102. K. Li, A.T.S. Wee, J. Lin, K.K. Lee, F. Watt, K.L. Tan, Z.C. Feng & J.B. Webb, “Surface and interface analysis of InSb/GaAs,” Thin Solid Films, 302, 111-115, 1997
  103. L. Malikova, Y.-S. Huang, F.H. Pollak, Z.C.Feng, M. Schurman, C.A. Tran, T. Salagaj & R.A. Stall, “Temperature dependence of the energies and broadening parameters of the interband transitions in Ga0.95Al0.05N,” Solid State Commun., 103, 273-278, 1997
  104. W. Shan, J.J. Song, Z.C. Feng, M. Schurman & R.A. Stall, “Pressure-dependent photoluminescence study of InxGa1-xN,” Appl. Phys. Lett., 71, 2433-2435, 1997
  105. I. Ferguson, C. A. Tran, R. F. Karlicek Jr., Z.C. Feng, R. Stall, S. Liang, Y. Lu & C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetechtors,” Mat. Sci. & Engi. B, 50, 311-314, 1997
  106. Z.C. Feng, H. Gong, W.J. Choyke, N.J. Doyle & R.F.C. Farrow, “A multi-technique study of the surface preparation of InSb substrate and subsequent grown CdTe films by molecular beam epitaxy,” J. Materials Science: Materials in Electronics, 7, 23-26, 1996
  107. Z.C. Feng, H.C. Chou, A. Rohatgi, G.K. Lim, A.T.S. Wee & K.L. Tan, “Correlations between the MOCVD-grown CdTe/CdS/SnO2/glass solar cell efficiencies and the interface/surface properties,” J. Appl. Phys., 79, 2151-2153, 1996
  108. C.C. Tin, R. Hu, J. Liu, Y. Vohra & Z.C. Feng, “Raman microprobe spectroscopy of low-pressure-grown 4H-SiC epilayers,” J. Crystal Growth, 158, 509-513, 1996
  109. Z.C. Feng, A. Rohatgi, C.C. Tin, R. Hu, A.T.S. Wee & K.P. Se, “Structural, optical and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition,” J. Electronic Materials, 25, 917-923, 1996
  110. D.H. Lee, B. Park, Z.C. Feng, D.B. Poker, L. Riester & J.E.E. Baglin, “Surface hardness enhancement in nitrogen-implanted dense-amorphous carbon,” J. Appl. Phys., 80, 1480-84, 1996
  111. H.Y. Zhang, X.H. He, Y.H. Shih, M. Schurman, Z.C. Feng & R.A. Stall, “The wavequide study and the refractive indices of GaN:Mg epitaxial film,” Optical Lett., 21, 1529-1531, 1996
  112. H.Y. Zhang, X.H. He, Y.H. Shih, M. Schurman, Z.C. Feng & R.A. Stall, “The study of nonlinear optical effects in GaN:Mg epitaxial film,” Appl. Phys. Lett., 69, 2953, 1996
  113. W. Shan, B.D. Little, J.J. Song, Z.C. Feng, M. Schurman & R.A. Stall, “Optical transitions in InxGa1-xN alloys grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., 69, 3315-17, 1996
  114. C. Carter-Coman, A.S. Brown, N.M. Jokerst, D.E. Dawson, R. Bicknell-Tassius, Z.C. Feng, K.C. Rajkumar & G. Dangall, “Strain accommodation in mismatched layers by molecular beam epitaxy: introduction of a new compliant substrate technology,” J. Electronic Materials, 25, 1044-1048, 1996
  115. H.Y. Chen, J. Lin, K.L. Tan & Z.C. Feng, “Characterization of lead lanthanum titanate thin films grown on fused quartz using MOCVD,” Thin Solid Films, 289, 59-64, 1996
  116. K. Li, J. Lin, A.T.S. Wee, K.L. Tan, Z.C. Feng & J.B. Webb, “Surface and interface analysis of GaSb/ GaAs heterostructures grown by metalorganic magnetron sputtering,” Appl. Surf. Sci., 99, 59-66, 1996
  117. A.G. Thompson, M. Schurman, Z.C. Feng, R.F. Karlicek, T. Salagaj, C.A. Tran, R.A. Stall, “The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor,” MRS Internet J. Nitride Semicond. Res., 1, 24, 1996
  118. H.C. Poon, Z.C. Feng, Y.P. Feng & M.F. Li, “The relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te,” J. Phys. C: Condensed Matter, 7, 2783-2799, 1996
  119. A.T.S. Wee, Z.C. Feng, H.H. Hgn, K.L. Tan, R.F.C. Farrow & W.J. Choyke, “XPS and SIMS studies on MBE-grown CdTe/InSb(001) heterostructures,” J. Phys. C: Condensed Matter, 7, 4359-4369, 1995
  120. M.J. Bozack, J.R. Williams, J.M. Ferraro, Z.C. Feng, & R.E. Jones, Jr., “Physical characterization of Pb1Zr0.2Ti0.8O3 prepared by the sol-gel process,” J. Electrochem. Soc., 142, 485-491, 1995
  121. Z.C. Feng, C.C. Tin, R. Hu, & K.T. Yue, “Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapor deposition,” Semicond. Sci. & Tech., 10, 1418-1422, 1995
  122. Z.C. Feng, F. Watt, K.K. Lee, A.T.S. Wee, H.H. Hng, V. Arbet-Engels, R.P.G. Karunasiri, K.L. Wang & K.P.J. William, “Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy,” J. Chinese Institute of Electrical Engineering, 2, 69-73, 1995
  123. Z.C. Feng, C.C. Tin, R. Hu, & J. Williams, “Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition,” Thin Solid Films, 266, 1-7, 1995
  124. Z.C. Feng, S. Perkowitz, J. Cen, K.K. Bajaj, D.K. Kinell & R.L. Whitney, “Photoluminescence, Raman and infrared diagnostics of GaAs-AlGaAs superlattices for intersubband infrared detection,” IEEE J. Selected Topics in Quantum Electronics, 1, 1119-1125, 1995
  125. Z.C. Feng, A.T.S.Wee, S.H.Tang, K.L.Tan, J.R.Payne, B.Pucket & R.DuVarney, “A Comprehensive Analysis of Porous Silicon by Surface & Optical Techniques,” Trans.Mat.Res.Soc.Jpn., 19A, 119-122, 1994
  126. Z.C. Feng, A.T.S. Wee, W.J. Choyke & R.F.C. Farrow, “Indium Interdiffusion in CdTe/InSb Heterostructures Studied by Optical and Surface Analytical Techniques,” Trans. Mat. Re Soc. Jpn s., 19A, 175-178, 1994
  127. Z.C. Feng, B.S. Kwak, A. Erbil & L.A. Boatner, “Raman scattering and X-ray diffraction of highly-textured (Pb1-xLax)TiO3 thin films,” Appl. Phys. Lett., 64, 2350-2352, 1994
  128. W. Ji, A.K. Kukaswadia, Z.C. Feng, S.H. Tang & P. Becla, “Nonlinear refraction and optical limiting in bulk ZnTe crysta,” J. Crystal Growth, 138, 187-190, 1994
  129. Z.C. Feng, P. Becla, L.S. Kim, S. Perkowitz, Y.P. Feng, H.C. Poon, K.P. Williams & G.D. Pitt, “Raman, infrared, photoluminescence and theoretical studies of the II-VI-VI ternary CdSeTe,” J. Crystal Growth, 138, 239-243, 1994
  130. W. Ji, A.K. Kukaswadia, Z.C. Feng & S.H. Tang, “Self-defocusing of nanosecond laser pulses in ZnTe,” J. Appl. Phys., 75, 3340-3343, 1994
  131. Z.C. Feng, A.T.S. Wee & K.L. Tan, "Surface and optical analysis of porous silicon membranes, “Surface and optical analysis of porous silicon membranes,” J. Phys. D: Appl. Phys., 27, 1968-1975, 1994
  132. Z.C. Feng & A.T.S. Wee, “Raman, FTIR and surface analyses of porous silicon membranes,” a review chapter for the book <>, ed. by Z.C.Feng & R.Tsu, World Scientific Publishing, Singapore, 175-194, 1994
  133. A.T.S. Wee, Z.C. Feng, H.H. Hgn, K.L. Tan, C.C. Tin, R. Wu & R. Coston, “Surface chemical states on 3C-SiC/Si epilayers,” Appl. Surf. Science, 81, 377-385, 1994
  134. Z.C. Feng, B.S. Kwak, A. Erbil & L.A. Boatner, “Difference Raman spectra of PbTiO3 thin films grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., 62, 349-351, 1993
  135. Z.C. Feng, S. Perkowitz, D.K. Kinnel, R.L. Whitney & D.N. Talwar, “Compositional dependence of optical phonon frequencies in AlxGa1-xAs,” Phys. Rev. B, 47, 13466-13470, 1993
  136. Z.C .Feng, J.R. Payne & B.C. Covington, “Anomalous temperature behavior of Raman spectra from visible light emitting porous Si,” Solid State Commun., 87, 131-134, 1993
  137. D. Redd, Z.C. Feng, K.T. Yue & T. Gansler, “Raman spectroscopic characterization of human breast issue: implications for breast malignancy monitoring,” Applied Spectroscopy., 47, 787-91, 1993
  138. B. Lou & Z.C. Feng, “Valence subbands and acceptor levels in p-type GaAs-AlxGa1-xAs superlattices,” Semicon. Sci. Technol., 8, 1741-1745, 1993
  139. D.N. Talwar, Z.C. Feng, & P. Becla, “On the impurity-induced phonon disordering in novel Cd1-xZnxTe alloys,” Phys. Rev. B, 48, 17064-17069, 1993
  140. Z.C. Feng, A.A. Allerman, P.A. Barnes & S. Perkowitz, “Raman scattering of InxGa1-xAs/InP grown by Uniform Radial Flow Epitaxy,” Appl. Phys. Lett., 60, 1848-1850, 1992
  141. J.J. Dubowski, A.P. Roth. E. Deleporte, G. Peter, Z.C. Feng & S. Perkowitz, “Optical properties of CdTe-Cd0.90Mn0.10Te quantum well structures grown by pulsed laser evaporation and epitaxy,” J. Cryst. Growth, 44, 862-866, 1992
  142. M. Macler, Z.C. Feng, S. Perkowitz, R. Rousina & J.B. Webb, “Far infrared analysis of In1-xGaxSb thin films on GaAs grown by metalorganic magnetron sputtering,” Phys. Rev. B, 46, 6902-6906, 1992
  143. K.T. Yue, Z.C. Feng, S. Perkowitz & B. Puckett, “A simple, versatile, liquid nitrogen cryostat for Raman studies,” Applied Spectroscopy, 46, 1590-92, 1992
  144. D.N. Talwar and Z.C. Feng, “Tight-binding description for the bound electronic states of isolated single and paired native defects in bata-SiC,” Phys. Rev. B, B44, 3191-3198, 1991
  145. Z.C .Feng, S. Perkowitz, R. Rousina & J.B. Webb, “Raman and infrared spectroscopies of In1-xGaxSb thin films on GaAs grown by metalorganic magnetron sputtering,” Can. J. Phys., 69, 386-389, 1991
  146. Z.C .Feng, S. Perkowitz & P. Becla, “Multiple phonon overtones in ZnTe,” Solid State Commun., 78, 1011-1014, 1991
  147. Z.C. Feng, S. Perkowitz, & J.J. Dubowski, “Raman scattering studies of Cd1-xMnxTe films on GaAs by pulsed laser evaporation and epitaxy,” J. Appl. Phys., 69, 7782-7787, 1991
  148. J. Hwang, K. Zhang, B.S. Kwak, A. Erbil & Z.C. Feng, “Growth of textured diamond films on Si (100) by C2H2/O2 flame method,” J. Materials Research, 5, 2334-2336, 1990
  149. Z.C. Feng, S. Perkowitz, T.S. Rao & J.B. Webb, “Resonance Raman scattering from epitaxial InSb thin films,” J. Appl. Phys., 68, 5363-5365, 1990
  150. S. Perkowitz, L.S. Kim, Z.C. Feng, P. Becla, “Optical phonons in Cd1-xZnxTe,” Phys.Rev. B, B42, 1455-1457, 1990
  151. Z.C. Feng, S. Perkowitz & O.K. Wu, “Raman and resonant Raman scattering for the HgTe/CdTe superlattice,” Phys. Rev. B, B41, 6057-6060, 1990
  152. R. Sudharsanan, Z.C. Feng, S. Perkowitz, A. Erbil, K.T. Pollard & A. Rohatgi, “Characterization of MOCVD-grown CdMnTe films by infrared spectroscopy,” J. Electronic Materials, 18, 453-455, 1989
  153. Z.C. Feng, S. Perkowitz, R. Sudharsanan, A. Erbil, K.T. Pollard, A. Rohatgi, J. Bradshaw & W.J. Choyke, “Photoluminescence of Cd1-xMnxTe films grown by metalorganic chemical vapor deposition,” J. Appl. Phys., 66, 1711-1716, 1989
  154. Z.C. Feng, S.Perkowitz, J.M.Wrobel & J.J.Dubowski, “Outgoing multi-phonon resonant Raman scattering and luminescence near the Eo gap in epitaxial CdTe films,” Phys. Rev. B, B39, 12997-13000, 1989
  155. Z.C. Feng, R. Sudharsanan, S. Perkowitz, A. Erbil, K.T. Pollard & A. Rohatgi, “Raman scattering characterization of high-quality Cd1-xMnxTe films grown by metalorganic chemical vapor deposition,” J. Appl. Phys., 64, 6861-6863, 1988
  156. Z.C. Feng, W.J. Choyke & J.A. Powell, “Raman determination of layer stresses and strains for heterostructures and its application to the cubic 3C-SiC/Si system,” J. Appl. Phys., 64, 6827-6835, 1988
  157. Z.C. Feng, A. Mascarenhas, W.J. Choyke & J.A. Powell, “Raman scattering studies for chemical vapor deposited 3C-SiC films on (100) Si,” J. Appl. Phys., 64, 3176-3186, 1988
  158. W.J. Choyke, Z.C. Feng & J.A. Powell, “Low temperature photoluminescence studies of CVD grown cubic SiC on Si,” J. Appl. Phys., 64, 3163-3175, 1988
  159. Z.C. Feng, M.J. Bevan, W.J. Choyke & S.V. Krishnaswamy, “A photoluminescence comparison of CdTe thin films grown by molecular beam epitaxy, metalorganic chemical vapor and UHV sputtered depositions,” J. Appl. Phys., 64, 2595-2600, 1988
  160. Z.C. Feng, M.J. Bevan, W.J. Choyke & S.V. Krishnaswamy, “A photoluminescence comparison of CdTe thin films grown by molecular beam epitaxy, metalorganic chemical vapor and UHV sputtered depositions,” J. Appl. Phys., 64, 2595-2600, 1988
  161. Z.C. Feng, M.G. Burke, W.J. Choyke, “Structural defect related donor-bound exciton spectra in MBE (001) CdTe films,” Appl. Phys. Lett., 53, 128-130, 1988
  162. Z.C. Feng, A. Mascarenhas & W.J. Choyke, “Low temperature photoluminescence spectra of (001) CdTe films grown by molecular beam epitaxy at different substrate temperatures,” J. Lumin., 35, 329-341, 1986
  163. Z.C. Feng, A. Mascarenhas, W.J. Choyke, R.F.C. Farrow, F.A. Shirland & W.J. Takei, “A photoluminescence study of molecular beam epitaxy grown CdTe films on (001) InSb substrates,” Appl. Phys. Lett., 47, 24-25, 1985
  164. Z.C. Feng, “The eigenequation of angular momentum operator induced in spherical coordinates,” University Physics, Vol. 5, No. 2, 41-43, 1984
  165. H.D. Liu, Z.C .Feng & Z.Z. Guo, “The stresses and photoelastic effects in GaAs-GaAlAs multilayer wafers with masked and selective thermal oxidation structure,” Acta Optica Sinica, 3, No. 6, 542-549, 1984
  166. H.D. Liu & Z.C .Feng, “Polarization characteristics of stripe geometry GaAs-Ga1-xAlxAs DH lasers with masked and selective thermal oxidation structure,” China Lasers, 10, 65-69, 1983
  167. Z.C. Feng & H.D. Liu, “Curvature Radius and layer stresses for thermal strain in semiconductor multilayer structures,” Chinese J. of semicond., 4, 171-180, 1983
  168. H.D. Liu & Z.C. Feng, “The stresses and photoelastic effects in stripe geometry GaAs-GaAlAs DH lasers with masked and selective thermal oxidation (MSTO) structure,” IEEE J. Quantum Electron., QE-19, 1016-1020, 1983
  169. Z.C. Feng & H.D. Liu, “Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures,” J. Appl. Phys., 54, 83-85, 1983
  170. H.D. Liu, W.X. Chen & Z.C. Feng, “Studies of native oxides of GaAs,” Chinese J. of Semicond., 3, 359-365, 1982
  171. H.D. Liu & Z.C. Feng, “Lloyd's mirror interference in a medium - A new method for determining photoelastic index variation,” Electron. Lett., 18, 251-252, 1982

Conference & proceeding papers:

  1. T.W. Kuo, T.Y. Lin, Z.C. Feng, W. Liu, S.J. Chua, H.L. Tsai, J.R. Yang, Y.S. Huang,, “Optical Properties and Material Studies of Different InGaN/GaN Multi-Quantum Well Structures Light Emitting Diode Wafer,” International Conference on Optics and Photonics in Taiwan (OPT) 2008, Fri-P1-307, 4-pages, Taipei, Taiwan, Dec. 2008
  2. Yen-Ting Chen, Yu Li Wu, Zhe Chuan Feng, Jyh-Fu Lee, Weijie Lu, “X-ray Absorption Fine-structure Spectroscopy on CdZnTe Ternary Alloys,” International Conference on Optics and Photonics in Taiwan (OPT) 2008 & International Symposium on Solar Cell Technology (ISSCT), Sat-S26-02, 4-pages, Taipei, Taiwan, Dec. 2008
  3. Tsuang-Lung Huang, Yi-Li Tu, Zhe Chuan Feng, Nao Li, Shen-Jie Wang, Ian Ferguson, “X-Ray Photoelectron Spectroscopy and Second Ion Mass Spectroscopy Study of GaN and InGaN on ZnO Substrate,” International Conference on Optics and Photonics in Taiwan (OPT) 2008 & International Symposium on Solar Cell Technology (ISSCT), Sat-S26-03, 4-pages, Taipei, Taiwan, Dec. 2008
  4. Yi-Li Tu, Yen-Ting Chen, Zhe Chuan Feng, N.C. Chen, Jyh-Fu Lee, “X-ray Absorption Fine-Structure Spectroscopy Investigation of GaN Thin Films on Si,” OPT 2008, Sat-S32-02, 4-pages, Taipei, Taiwan, Dec. 2008
  5. Yu Li Wu, Tsung-Lung Huang, Zhe Chuan Feng, Chia-Cheng Wu, Po-Rung Lin, Dong-Sing Wuu, “Variable angle spectroscopic ellipsometry investigations of MgZnO on c-face sapphire,” OPT 2008, Sat-S43-06, 4-pages, Taipei, Taiwan, Dec. 2008
  6. Chih-Hsiang Lin, Ying Jie Liao, Li-Chyong Chen, Kuei-Hsien Chen, Ian T. Ferguson, Zhe Chuan Feng, “Indium Nitride Nanowires: Growth and Characteristics,” OPT 2008, Sat-P2-077, Taipei, Taiwan, Dec. 2008
  7. Tsung Lung Huan, You Ren Lan, Zhe Chuan Feng, William E. Fenwick, Ian Ferguson, “Spectroscopic ellipsometry and X-ray photoelectron spectroscopy studies of bulk and epitaxial ZnO thin films,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, A12, 01-019, 4-pages, Taiwan, Dec. 2008
  8. Fu-Chung Hou, Yu-Cheng Yang , Tzuen-Rong Tang, Zhe Chuan Feng, A. A. Allerman, P. A. Barnes, Weijie Lu, “Infrared reflectance studies of InGaAs thin films grown on InP by uniform radial flow epitaxy,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, B51, 02067, 4-pages, Taiwan, Dec. 2008
  9. Lin Tse Yang,Yen-Ting Chen, Zhe Chuan Feng, Ian Ferguson, “AlGaN/GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, B35, 02-048, 4-pages, Taiwan, Dec. 2008
  10. F. C. Hou, Yu-Chang Yang, Z. C. Feng, T. R. Yang, “Far-infrared reflectance analysis of bulk and epitaxial InSb,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, B39, 02-055, 4-pages, Taiwan, Dec. 2008
  11. Yu Li Wu, Tsung Lung Huan, You Ren Lan, Zhe Chuan Feng, Ian Ferguson, “X-ray photoelectron spectroscopy and spectroscopic ellipsometry studies of AlN thin layers grown by metalorganic chemical vapor deposition,” AMTACT 2008, D05, 04-009, 4-pages, Taiwan, Dec. 2008
  12. I-Hsiang Hung, Siou-Cheng Lien, Zhe Chuan Feng, Chieh-Hsiung Kuan, Weijie Lu, “Temperature dependence of Raman scattering in 4H-SiC,” AMTACT 2008, D06, 04-010, 4-pages, Taiwan, Dec. 2008
  13. Chung-Lung Huang, Zhe Chuan Feng, Yi Ling Shen, Wong How Kwong, Andrew T. S. Wee, Nola Li, Shen Jie Wang and Ian Ferguson, “Surface and structural investigation of n-InGaN on ZnO with GaN buffer layer grown by metal organic chemical vapor deposition,” Materials Research Socity Taiwan 2008 anneal meeting, P04-020, CD-00760076, 4-pages, Taipei, Taiwan, Nov. 2008
  14. Fu-Chung Hou, Zhe Chuan Feng, T. R. Tang and Weijie Lu, “Infrared reflectance spectroscopy studies of Hg1-xMnxTe ternary alloys,” Materials Research Socity Taiwan 2008 anneal meeting, P05-002, CD-00770077, 4-pages, Taipei, Taiwan, Nov. 2008
  15. Ling Min Kong, Zhe Chuan Feng, Zheng Yu Wu and Weijie Lu, “Time-resolved photoluminescence investigation of InAs quantum dots with InGaAs strained reducing layer,” Materials Research Socity Taiwan 2008 anneal meeting, P04-030, CD-01460146, 4-pages, Taipei, Taiwan, Nov. 2008
  16. Chun-Chiang Kuo, Chih-Wei Hsu, Zhe Chuan Feng, Kuei-Hsien Chen, and Li-Chyong Chen, “Polarized Raman scattering of a-axis single GaN nanowires,” Materials Research Socity Taiwan 2008 anneal meeting, P07-012, CD-01010101, 4-pages, Taipei, Taiwan, Nov. 2008
  17. Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, Ian Ferguson, and Weijie Lu, “X-ray Absorption Fine-structure Spectroscopy Investigation on CdSeTe Alloys for Photovoltaic Application,” International Electronic Devices and Materials Symposium (IEDMS) 2008, CD-496, 4-pages, TaiChung, Taiwan, Nov. 2008
  18. Yu-Cheng Shin, Zhe Chuan Feng, Chieh-Hsiung Kuan, Ian Ferguson, and Weijie Lu, “Raman Scattering Properties of n-Type 6H-SiC,” International Electronic Devices and Materials Symposium (IEDMS) 2008, IEDMS 2008 CD-477, TaiChung, Taiwan, Nov. 2008
  19. Nola Li, Shen-Jie Wang, Chung-Lung , Zhe Chuan Feng, Hung-Lin Tsai, Jer-Ren Yang, Adriana Valencia, Jeff Nause and Ian Ferguson, “Metalorganic chemical vapor deposition of GaN and InGaN layer on ZnO substrate using a-Al2O3 as a trabsition layer,” Eighth International Conference on Solid State Lighting, Proc. SPIE, 7058K1-6, San Diego, USA, Aug. 2008
  20. Zhe Chuan Feng, Ting-Wei Kuo, C.Y. Wu, Hong-Ling Tsai, Jer-Ren Yang, Y. S. Huang, Ian T. Ferguson and Weijie Lu, “Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes (invited paper),” Eighth International Conference on Solid State Lighting, Proc. SPIE, 7058S1-12, San Diego, USA, Aug. 2008
  21. Zhe-Chuan Feng, Yi-Zhe Huang, Jyh-Hua Ting, Li-Chyong Chen, and Weijie Lu, “Field emission properties of multi-wall carbon nanotubes,” NanoScience + Engineering 2009, Proc. SPIE 7037OR-1-6, San Diego, USA, Aug. 2008
  22. Sa Huang, Pin-Fang Huang, Zhe Chuan Feng, April Brown, and Weijie Lu, “Optical and Material Characteristics of InAs/GaAs Quantum Dots,” NanoScience + Engineering 2009, Proc. SPIE 70391I-1-10, San Diego, USA, Aug. 2008
  23. Ping-Fong Huang, Yen-Ting Chen, H, Y. Lee, Zhe Chuan Feng, Hao-Hsiung Lin, and Weijie Lu, “Surface and Material Characteristics of Ga2O3 Thin Films on GaAs,” Optical Engineering + Applications 2009, Proc. SPIE 70670M-1-8, San Diego, USA, Aug. 2008
  24. Chih-Hsiang Lin, Chun-Chiang Kuo, Kuei-Hsien Chen, Li-Chyong Chen, Jianqiao Hu, and Zhe Chuan Feng, “Growth and characterization of indium nitride nanowires,” 16th Annual International Conference on Composites or Nano Engineering (ICCE-16), 439-440, Kunming, China, Jul. 2008
  25. C.L. Huang, Y.Z. Huang, Z.C. Feng, Y.L. Shen, N. Li, S.J. Wang and I. Ferguson, “Optical and structure properties of MOCVD-grown InGaN/GaN on ZnO substrate with Al2O3 transition layer by atomic layer deposition,” 2008 Taiwan Display Conference, p.383-386, Taipei, Taiwan, Jun. 2008
  26. T.W. Kuo, F.C. Hou, Z.C. Feng, W. Liu, H.L. Tsai, J.R. Yang and Y.S. Huang, “Optical and material studies of InGaN/GaN multi-quantum well light emitting diode wafer with different structure,” 2008 Taiwan Display Conference, p.387-390, Taipei, Taiwan, Jun. 2008
  27. Chu-Wan Huang, Zhe Chuan Feng, Yia-Chung Chang, and Ting-Kai Li, “Spectroscopic Ellipsometry Studies of Tb-doped SiO2 Thin Films,” MRS Symp. Proc. Symposium I, Materials and Processes for Non-Volatile Memories,, 6-pages, Slaughter and Dimitris Tsoukalas, 2007
  28. Zhe Chuan Feng, Hong-Lin Tsai, Jheng-Hong Chen, Jer-Ren Yang, Alan Gang Li, and Ian T. Ferguson, “Nano-structural Characteristics of InGaN/GaN multiple quantum well light-emitting diodes grown by metalorganic chemical vapor deposition,” 15th INT. CON. on COMPOSITES/NANO ENGINEERING, 2-pages, in ICCE-15 proceedings, 2007
  29. Z. S. Lee, Z. C. Feng, A. G. Li, H. L. Tsai, J. R. Yang, Y. F. Chen, N. Li, I. T. Ferguson and W. Lu, “Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” Seventh International Conference on Solid State Lighting, edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian, Proc. of SPIE, Vol. 6699, 66690I, 2007
  30. Nola Li, Shen-Jie Wang, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Chris Summers, Ian Ferguson, “Growth of InGaN with High Indium Content on ZnO Based Sacrificial Substrates,” Seventh International Conference on Solid State Lighting, edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian, Proc. of SPIE, Vol. 6699, 66690X, 2007
  31. Z. S. Lee, Z. C. Feng, H. L. Tsai, J. R. Yang, A. G. Li, L. C. Chen, K. H. Chen, Y. F. Chen, I. T. Ferguson, and W. Lu, “Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: effects of nano-structural features,” Manufacturing LEDs for Lighting and Displays, edited by T. P. Pearsall, Proc. of SPIE, Vol. 6797, 67970S, 2007
  32. Z. C. Feng, “Environment-Friendly and High-Efficiency White and Blue Light Emitting Devices and Materials for New Lighting Ech,” AEARU Joint Workshop-ICASS 2007, p. 65-73, 2007
  33. Pin-Fang Huang, Sa Huang, April Brown, Zhe Chuan Feng, Hao-Hsiung Lin and Weijie Lu, “Optical and Material Characteristics of InAs/GaAs Quantum Dots,” Taiwan 2007 MRS meeting, 4-pages, CD, Taiwan, 2007
  34. Z. S. Lee, Z. C. Feng, A. G. Li, T. Y. Lin, and Y. F. Chen, “Time-resolved photoluminescence studies of InGaN/GaN multiple quantum well light emitting diodes,” Taiwan 2007 MRS meeting, 4-pages, CD, Taiwan, 2007
  35. L. C. Cheng, F. C. Hou, Z. C. Feng, C. C. Tin, C. H. Kuan, Y. W. Yang, “Raman Scattering and X-ray Photoelectron Spectroscopy Studies of Cubic Silicon Carbide grown on Si(100) by Chemical Vapor Deposition,” International Workshop on Widegap Semiconductors (IWWWS) 2007, 6-pages, CD-1, Taiwan, 2007
  36. Z. C. Feng, “Nano-structures and luminescence mechanisms of InGaN-based quantum well light emitting diodes,” International Workshop on Applied Optics & Nanophotonics (IWAON), 152-172, 2007
  37. Z. C. Feng, Yi-Zhe Huamg, Jyh-Hua Ting, Li-Chyong Chen, “Field Emission Properties of Muti-wall Carbon Nanotubes,” Optics and Photonics, Taiwan 2007, AO-065, 3-pages, Taiwan, 2007
  38. Z. C. Feng, L. C. Cheng, C. W. Huang, F. C. Hou, T. K. Li, C. C. Chang, “Characterization of Tb-doped SiO2 Grown on Si(111),” Optics and Photonics, Taiwan 2007, EO-007, 3-pages, Taiwan, 2007
  39. Z. C. Feng, P. F. Huang, Y. T. Chen, H. Y. Lee, “Optical and Material Characteristics of Ga2O3 Thin Films on GaAs,” Optics and Photonics, Taiwan 2007, EO-055, 3-pages, Taiwan, 2007
  40. Z. C. Feng, Shang-Yu Hong, Yi-Zhe Huang, Zhi-Ming Lai, “Optical Properties and Analyses of AlInGaP Double Heterostructure,” Optics and Photonics, Taiwan 2007, EO-065, 3-pages, Taiwan, 2007
  41. Z. C. Feng, Chu Wan Huang, Chao-Hsin Chien, “Dielectric Constants of High k and Low k Materials,” Optics and Photonics, Taiwan 2007, AP-037, 3-pages, Taiwan, 2007
  42. Z. C. Feng, T. W. Kuo, C. Y. Wu, H. L. Tsai, J. R. Yang, Y. S. Huang, “Optical characteristics of InGaN/GaN multiple quantum well light emitting diodes with modifiable charge asymmetric resonance tunneling structure,” Optics and Photonics, Taiwan 2007, HP-013, 3-pages, Taiwan, 2007
  43. Siou-Cheng Lien, Zhe Chuan Feng, Chieh-Hsiang Kuan, Rusli, W. E. Collins and Weijie Lu, “Bulk 4H-SiC: dependence of free carrier concentration with temperature,” Taiwan 2007 TACT meeting, #10-2, 4-pages, Taiwan, 2007
  44. Chu Wan Huang, Zhe Chuan Feng, Tzuen-Rong Yang and Ting Kai Li, “Optical Prosperities of Tb-doped SiO2 Thin Films by Spectroscopic Ellipsometry,” Taiwan 2007 TACT, #9-20, 4-pages, Taiwan, 2007
  45. Z. C. Feng, Yi-Zhe Huamg, Jyh-Hua Ting, Li-Chyong Chen, “Field Emission Properties of Muti-wall Carbon Nanotubes,” Taiwan 2007 TACT, #5-2, 4-pages, Taiwan, 2007
  46. Z. C. Feng, T. W. Kuo, C. Y. Wu, H. L. Tsai, J. R. Yang, Y. S. Huang, “Optical and structural properties of InGaN/GaN multiple quantum well light emitting diodes with modifiable charge asymmetric resonance tunneling structure,” Taiwan 2007 TACT, Proceedings-CD, 4-pages, Taiwan, 2007
  47. Z. S. Lee, T. W. Kuo, Z. C. Feng, A. G. Li, L. C. Chen, K. H. Chen, “Photoluminescence dynamics of InGaN/GaNmultiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” Taiwan 2007 TACT, #4-17, 4-pages, Taiwan, 2007
  48. S. Huang, A. Brown, A. Doolittle, Z.S. Lee and Z.C. Feng, “Modified Molecular Beam Epitaxy Growth of GaN on LiGaO2 substrates,” Proceedings of MBE Taiwan 2006 and High-k Materials Workshop, C60-61, Taiwan, 2006
  49. Z.C. Feng and Z.Y. Wu, “Cubic SiC Grown on Si substrate by Chemical Vapor Deposition: Optical Characterization,” Proceedings of the International Workshop on Modern Science and Technology, p.450-455, Taiwan, 2006
  50. Z. C. Feng, S.Y. Hung, T.W. Kuo and I. Ferguson, “Defects-Related Optical Spectra of Cadmium Telluride Films Prepared by Molecular Beam Epitaxy,” Proceedings of MBE Taiwan 2006 and High-k Materials Workshop, C55-56, Taiwan, 2006
  51. L.M. Kong, J.N. Yao, Y.B. Deng, Z.Y. Wu and Z. C. Feng, “Effects of the In0.1Ga0.9As Strained Layer on Structures and Spectra of InAs Self-assembled Quantum Dots,” Proceedings of the International Workshop on Modern Science and Technology, p.347-352, Taiwan, 2006
  52. Z. C. Feng, P. F. Huang and I. T. Ferguson, “Raman Determination of Strain-Stress Release from MBE-grown Lift-Off InxGa1-xAs/GaAs Heterostructures,” Proceedings of the 11th Optoelectronics and Communication Conference, 2-pages in CD, Kaohsiung, 2006
  53. H. L. Tsai, J. R. Yang, I. T. Ferguson and Z. C. Feng, “The Structural Characteristics of InGaN/GaN multiple quantum wells observed by Transmission Electron Microscopy,” Proceedings of the 11th Optoelectronics and Communication Conference, 2-pages in CD, Kaohsiung, 2006
  54. Z.C. Feng, B. Xue, P. Chen, J. Lin and W. Lu, “Structural and Optical Investigation of Copper Nanoparticle and Microfiber Produced by Using Carbon Nanotube as Templates,” Proc. of 6th IEEE Conference on Nanotechnology, 4-pages, Cincinatti, 4-pages, USA, 2006
  55. Z. C. Feng, J. Chen, H. Tsai, J. Yang, P. Li, C. Wetzel, T. Detchprohm, J. Nelson, and I. T. Ferguson, “Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition,” Sixth International Conference on Solid State Lighting, 63370D-1 to D-10, USA, 2006
  56. Z. C. Feng, B. Xue, P. Chen, J. Lin, W. Lu, N. Li and I. T. Ferguson, “Optical and structural studies of copper nanoparticles and microfibers produced by using carbon nanotube as templates,” Sixth International Conference on Solid State Lighting, 8-pages, USA, 2006
  57. Z. C. Feng, Z. S. Lee, L. C. Cheng, Y. W. Yang and C. C. Tin, “Optical and surface properties of 3C-SiC on Si grown by chemical vapor deposition,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  58. Li-Chi Cheng, Chu-Wan Huang, Zhe-Chuan Feng, Ying-Lang Wang, and Hwo-Shuenn Sheu, “Synchrotron Radiation X-ray Diffraction and Spectroscopic Ellipsometry Investigation of Si3N4 on Si for sub-micro Si-IC applications,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  59. Zhen-Sheng Lee, Shang-Yu Hung, Ting Wei Kuo, Zhe-Chuan Feng, Tai-Yuan Lin, Yang-Fang Chen, Alan Gang Li, “Time-resolved photoluminescence of InGaN/GaN quantum well Light Emitting Diode,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  60. S. C. Lien, C. W. Huang, Z. C. Feng, S. Sun, C. Rice, G. S. Tompa, “Metal organic chemical vapor deposition and investigation of ZnO thin films on sapphire,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  61. Zhe Chuan Feng, Jim B. Webb, S. Ray Bullock and Weijie Lu, “Optical Studies of GaSb hetero-epitaxied on GaAs substrate by metalorganic magnetron sputtering,” Proc., Materials Research Society 2006 Annual Meeting, 4-pages, Taiwan, 2006
  62. Jheng Hong Chen, Zhe Chuan Feng, Peng Li, C. Wetzel, T. Detchprohm, and J. Nelson, “Optical property comparison of blue and green InGaN/GaN multiple quantum well light-emitting diodes prepared by metalorganic chemical vapor deposition,” Proc., Materials Research Society 2006 Annual Meeting, 4-pages, Taiwan, 2006
  63. Zhe Chuan Feng, Li-Chi Cheng, Chu-Wan Huang, Ying-Lang Wang, and T. R. Yang, “Synchrotron Radiation X-ray Diffraction and X-ray Photoelectron Spectroscopy Investigation on Si-based Structures for sub-micron Si-IC Applications,” 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, p981-984, Malysia, 2006
  64. Zhe Chuan Feng, Li-Chi Cheng, Chu-Wan Huang, Ying-Lang Wang and T. R. Yang, “Surface science and optical investigation on nano-scale thin films for Si-based 65-nm intergrated circuits application,” The 1st International Workshop on Functional Materials and the 3rd International Workshop on Nanophysics and Nanotechnology, p716-718, Vietnan, 2006
  65. Zhe Chuan Feng, Jim Webb, Weijie Lu and Warren E. Collins, “Effects of ion implantation on the optical properties of InSb,” 2006 International Electron Devices and Materials Symposia, p221-222, Taiwan, 2006
  66. Zhe Chuan Feng and Chin-Che Tin, “Raman scattering studies on cubic SiC grown on off-axis Si substrate by chemical vapor deposition,” 2006 International Electron Devices and Materials Symposia, p25-26, Taiwan, 2006
  67. Li-Chi Cheng, Zhe Chuan Feng, Ying-Lang Wang, Che-Chen Chang, Warren E. Collins and Weijie Lu, “X-ray photoelectron spectroscopy of SiN on Si for sub-micro Si-IC applications”, 2006 International Electron Devices and Materials Symposia,” 006 International Electron Devices and Materials Symposia, p497-498, Taiwan, 2006
  68. Z.C. Feng, L.C. Cheng, C.W. Huang and Y.L. Wang, “Synchrotron Radiation X-ray Photoelectron Spectroscopy and X-ray Diffraction Investigation on Si-based Structures for Sub-micron Si-IC Applications,” TAIWAN-INDIA CONFERENCE ON NANOMATERIALS, OS-07, Taiwan, 2006
  69. Z. S. Lee, S. Y. Hung, T. W. Kuo, Z. C. Feng, Y. F. Chen and A. G. Li, “Room temperature time-resolved photoluminescence of InGaN/GaN quantum well Light Emitting Diode,” Optics and Photonics Taiwan 2006, AP-034, Taiwan, 2006
  70. C. W. Huang, Z. C. Feng, Y. C. Chang and T. K. Li, “pectroscopic Ellipsometry study and analysis of Tb-doped SiO2 thin films Optics and Photonics,” Optics and Photonics Taiwan 2006, AP-033, Taiwan, 2006
  71. Li-Chi Cheng, Zhe Chuan Feng and Che-Chen Chang, “urface Chemical States of heteroepitaxial Mg doped GaN on Sapphire by Metalorganic Chemical Vapor Deposition,” Optics and Photonics Taiwan 2006, AP-140, Taiwan, 2006
  72. Shang-Yu Hung, Hong-Chia Lin and Zhe Chuan Feng, “Raman scattering of ZnO E2 phonon mode studied by spatial correlation model,” Optics and Photonics Taiwan 2006, AP-103, Taiwan, 2006
  73. J. H. Chen, J. C. Wang, Z. C. Feng, and A. G. Li, “Metalorganic chemical vapor deposition and investigation of InGaN/GaN multiple quantum wells with excellent characteristics,” 2005 International Symposium on Thin Films and Nano-Technology and National Science Council Reports, CD, BP-10, 4-pages, Taiwan, 2005
  74. Z. C. Feng, L. C. Chang and A. Erbil, “Metalorganic chemical vapor deposition and material properties of ferroelectric lead titanate-based thin film oxides,” 2005 International Symposium on Thin Films and Nano-Technology and National Science Council Reports, CD, AP-11, 4-pages, Taiwan, 2005
  75. Zhe Chuan Feng and T. W. Kuo, “New Optical Futures of 3C-SiC Grown on Si by Chemical Vapor Deposition,” 2005 International Symposium on Thin Films and Nano-Technology and National Science Council Reports, CD, AP-10, 4-pages, Taiwan, 2005
  76. J.W. Yu, Z.C. Feng, J.B. Wang, Z.S. Lee, R. Varatharajan, B. Nemeth, J. Nause, I. Ferguson, “Optical characterization of ZnO materials grown by modified melt growth technique,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  77. Z.C. Feng, C.T. Chien, J.W. Yu, S.Y. Hung, L.C. Chen, and I. Ferguson, “Ion implantation in Gallium Nitride,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  78. J.H. Chen, J.C. Wang and Z.C. Feng, “Carrier localization in InGaN/GaN quantum well blue light emitting diodes,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  79. J.W. Yu, J.C. Wang, Z.C. Feng, H. Kang, and I. Ferguson, “Dislocations in AlGaN epitaxial layers,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  80. Z.C. Feng, T.W. Kuo and D.N. Talwar, “New Optical Futures of 3C-SiC Grown on Si by Chemical Vapor Deposition,” National Science Council – Optoelectronics Annual Meeting, CD, 3-pages, Taiwan, 2005
  81. Z.C. Feng, J.W. Yu, Z.S. Lee, C. Tran and I. Ferguson, “Material Properties of GaN Films Grown on SiC/SOI Substrate,” Chinese Society of Materials Science (CSMS) Annual Meeting, CD, 4-pages, Taiwan, 2005
  82. (128) J.H. Chen, Z.C. Feng, J.C. Wang, Z.S. Lee, H.L. Tsai, J.R. Yang, A. Parekh, E. Armour and P. Faniano, “Optical and material studies of InGaN/GaN multiple-quantum-well blue light emitting diodes,” Chinese Society of Materials Science (CSMS)Annual Meeting, CD, 4-pages, 4-1-P038, Taiwan, 2005
  83. S. Sun, G.S. Tompa, C. Rice, P. Masaun, J.B. Wang, Z.S. Lee, T.W. Kuo and Z.C. Feng, “Metalorganic chemical vapor deposition and materials properties of ZnO thin films grown on sapphire substrates,” Chinese Society of Materials Science (CSMS)Annual Meeting, CD, 4-pages, 4-1-I002, USA, 2005
  84. H.L. Tsai, T.Y. Wang, J.R. Yang, J.H. Chen and Z.C. Feng, “HAADF-STEM Imaging on V-defect and Superlattice of GaN-based semiconductor,” Asia-Pacific Advanced Microscopy Symposium, CD-2-pages, Taiwan, 2005
  85. Z.C. Feng, J.H. Chen, H.L. Tsai, J.R. Yang, P. Li, C. Wetzel, T. Detchprohm and J. Nelson, “Transmission Electron Microscopy and Correlated Optical Investigation on InGaN/GaN Multiple Quantum Well Light Emitting Diodes,” Asia-Pacific Advanced Microscopy Symposium, CD-2-pages, Taiwan, 2005
  86. Z.C. Feng, J. W. Yu, H.C. Lin, L.S. Wang, and S.J. Chua, “Comparative investigation of MOCVD-grown GaN thin films on Si with and without periodic Si-delta dopings,” ICNS6, Bremen, Germany, 2005
  87. S. Z. Sun, G. S. Tompa,.C. Rice, P. Masaun, D. C. Look, B. B. Claflin, H. H. Liu and Z. C. Feng, “MOCVD Growth of ZnO Thin Films in large areas,” ibid, ACCGE-16, p. 107-108, 2005
  88. Z.C. Feng, J.H. Chen, H.L. Tsai and J.R. Yang, “Metalorganic Chemical Vapor Deposition and Structural/Optical Characteristics of InGaN/GaN Multiple Quantum Well Light Emitting Diode Wafers Grown on Sapphire,” Photonic Materials, Devices, and Applications, , Proc. of SPIE Vol. 5840,, p.201-209, Spain, 2005
  89. H. L. Tsai, J. R. Yang, Z. H. Chen and Z.C. Feng, “FEG-TEM Observation on InGaN/GaN Multiple Quantum Wells,” 16th American Conference on Crystal Growth and Epitaxy and 12th US Biennial Workshop on Organometallic Vapor Phase Epitaxy, ACCGE-16, p. 194-195, Taiwan, 2005
  90. W. Tong, M. Harris, B. K. Wagner, J. W. Yu, H. C. Lin and Z.C. Feng, “Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates,” Proceeding of MBE Taiwan, page D-65/D-68, Taiwan, 2005
  91. Z.C. Feng, W.Y. Chang & J. Lin, “Photoluminescence properties of CdTe on InSb grown by molecular-beam epitaxy,” Proceeding of MBE Taiwan, page D-65/D-68, Taiwan, 2005
  92. Z.C. Feng, “Raman spectroscopic detection of silicone leakage in human breast and lymph node tissues,” Proceedings of the Second Asian and Pacific Rim Symposium on Biophotonics (APBP 2004), IEEE Catalog Number: 04pp. 28-29, Taipei, Dec. 2004
  93. Z.C. Feng, “Turbo-disc Metalorganic Chemical Vapor Deposition and Optical / Structural Investigation of GaN-based Materials and Structures,” invited presentation, 1st Applied Science & Technology Conference, Photonics & Communication pp.11, Taiwan, Dec. 2004
  94. ( 5) Z.C. Feng, J.W. Yu, H.C. Lin, W. Tong, M. arris and B.K. Wagner, “Characterization of Crack-Free Thin GaN Layers on Si substrates by Pulse Source Injection Molecular Beam Epitaxy,” IUMRS International Conference in Asia (IUMRS-ICA-2004), F-O-24, ID-50, 5-pages, Hsinchu, Taiwan, Nov. 2004
  95. Z.C. Feng, J.W. Yu, H.C. Lin, L.S. Wang, S. Tripathy and S. J. Chua, “Control and Improvement of Crystalline Cracking from GaN Thin films grown on Si by Metalorganic Chemical Vapor Deposition,” IUMRS International Conference in Asia (IUMRS-ICA-2004), F-O-23, ID-41, 6-pages., Hsinchu, Taiwan, Nov. 2004
  96. T.R. Yang, J.B. Wang & Z.C. Feng, “Optical and Transport Properties of InSb Thin Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” The 3rd Asian conf. on CVD, B3 Conference Synopsis p.111-112, Taipei, Nov. 2004
  97. J.W. Yu, J. B. Wang, L.H. Peng, Z.C. Feng, and C.A. Tsan, “Material Properties of GaN Thin Films Grown on SiC/SOI Substrate,” The 3rd Asian conf. on CVD, B35, Conference Synopsis p.110, Taipei, Nov. 2004
  98. Z.C. Feng , H.C. Lin, W. Lu, W.E. Collins and I. Ferguson, “Surface and optical properties of AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” The 3rd Asian conf. on CVD, p.64-65, Taipei, Nov. 2004
  99. Z.C. Feng, K. Li, Y.T. Hou, C.C. Yang & J. Zhao, “A comparative study of high resolution transmission electron microscopy and infrared spectroscopy for GaN grown on sapphire by metalorganic chemical vapor deposition,” The 3rd Asian conf. on CVD, p.57, Taipei, Nov. 2004
  100. J.R. Chang, J.H. Chen, Z.C. Feng, J.K. Wang, P.Li, C. Wetzel, T. Detchprohm and J. Nelson, “Long Decay Time Blue-Green Emissions from InGaN/GaN Multiple Quantum Well Light Emitting Diode Wafers Grown by Metalorganic Chemical Vapor Deposition,” The 3rd Asian conf. on CVD, p.56-57., Taipei, Nov. 2004
  101. Z.C. Feng, W. Liu, S.J. Chua, C.C. Yang & J. Zhao, “Photoluminescence Features of Low Indium Composition InGaN Alloys Grown by Metalorganic Chemical Vapour Deposition,” The 3rd Asian conf. on CVD, p.16, Taipei, Nov. 2004
  102. Z.C. Feng, H.C. Lin, T.R. Yang, R.P.G. Karunasiri, W. Lu & W.E. Collins, “Multitechnique Characterization of Sandwiched Si/SiGe/Si Heterostructures,” Intern. Conf. on Electrochemical Society, Hawaii, Oct. 2004
  103. Z.C. Feng, T.R. Yang, J. Zhao, W. Lu, W.E. Collins, I. Ferguson, J.Z. Wan and F.H. Pollak, “Non-Destructive characterization of the ordering in AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” Crystal Growth Conference, France, Aug. 2004
  104. T.R. Yang, Z.C. Feng, W. Lu and W.E. Collins, “Far infrared reflectance spectroscopy of InSb thin films grown on GaAs by metalorganic vapor deposition,” in Proceedings of the XIXth International Conference on Raman Spectroscopy, Edited by Peter M. Fredericks, Ray L. Frost and Llew, p.629-630, Austrilia, 2004
  105. Z.C. Feng, “Second order Raman scattering of cubic silicon carbide,” in Proceedings of the XIXth International Conference on Raman Spectroscopy, Edited by Peter M. Fredericks, Ray L. Frost and Lle, p.242-243 and CD-ROM, O-81, Austrilia, 2004
  106. D.N. Talwar and Z.C. Feng, “Simulation of pressure dependent phonon properties of zinc blende silicon carbide,” Proceedings of the XIXth International Conference on Raman Spectroscopy, Edited by Peter M. Fredericks, Ray L. Frost and Llewell, p.97-98 and CD-ROM, O-4, Austrilia, 2004
  107. H. Kang, Z.C. Feng, and I. Ferguson, “Study on AlGaN and nucleation layers with X-Ray diffraction,” GaN and Related Alloys, MRS Symp. Proc. Vol. 798, Boston, 2004
  108. M. H. Kane, R. Varatharajan, Z.C. Feng, S. Kandoor, J. Nause, C. Summers, I. T. Ferguson,, “Characterization of bulk crystals of transition metal doped ZnO for spintronic applications,” Progress in Compound Semiconductor Materials III-Electronic and Optoelectronic Applications, MRS MRS Symp. Proc. Vol. 799,, Boston, 2004
  109. S. Ganesan, Z.C. Feng, D. Mehta, M.H. Kane, I. Ferguson, J. Nause, B. Wagner, and C. Summers, “Optical properties of bulk and epitaxial ZnO,” Progress in Compound Semiconductor Materials III-Electronic and Optoelectronic Applications, MRS MRS Symp. Proc. Vol. 799, Boston, 2004
  110. Z.C. Feng, D. Mehta, P.D. Helm, D. Nicol, I. Ferguson, J. Senawiratne and N. Dietz, “Effects of Cu-ion implantation into epitaxial (Ga,Al)N films grown by metalorganic vapor deposition,” GaN and Related Alloys, MRS Symp. Proc. Vol. 798,, Boston, 2004
  111. Heng-Yin Chen1 Bing-Yuh Lu2 Yi-Hui Wu1 Yao Ou-Yang1 Jin-Shin Lai3 Fok-Ching Chong, “THE DEVELOPMENT OF M3S-BASED GPS NAVIGATION POWER WHEELCHAIR AND TELE-MONITOR SYSTEM,” Proc. of Annual Symposium of Biomedical Engineering, Taipei, 2004
  112. Yi-Chu Chang1 Jen-Chien Chien1 Jin-Shin Lai2 Fok-Ching Chong1, “INTEGRATION of the MULTIPLE MASTER MULTIPLE SLAVE SYSTEM USING DIGITAL SIGNAL PROCESSORS,” Proc. of Annual Symposium of Biomedical Engineering, Taipei, 2004
  113. Z.C. Feng, Y.J. Sun, L.S. Tan, S.J. Chua, J.W. Yu, J.H. Chen, C.C. Yang, W. Lu & W.E. Collins, “P-type doping in GaN through Be implantation,” International Workshop on Nitride Semiconductors, 19-23, Pitzburg, 2004
  114. S. Ganesan, Z.C. Feng, D. Mehta, M.H. Kane, I. Ferguson, J. Nause, B. Wagner, and C. Summers, “Optical properties of bulk and epitaxial ZnO,” MRS MRS Symp. Proc., 1-6, Boston, 2004
  115. W. Tong, M. Harris, B.K. Wagner, C.J. Summers, Z.C. Feng and C.C. Yang, “Thin GaN Layers Growth on Silicon Substrates Using Pulse Source Injection Molecular Beam Epitaxy,” Proceedings: EL2004, 338-340, Canada, 2004
  116. H. Kang, N. Spencer, D. Nicol, Z.C. Feng, I. Ferguson, S. P. Guo, M. Pophristic, and B. Peres, “X-Ray Diffraction Analysis of Threading Dislocation Densities in Epitaxial Layers as Grown by MOCVD,” Proceedings of CLEO/Pacific Rim 2033, p. 226, 2003
  117. Y.C. Cheng, H.S. Chen, C.C. Yang, Z.C. Feng, G. A. Li, “Effects of emission properties of interface thin layers in InGaN/GaN quantum well structures,” Proceedings of CLEO/Pacific Rim 2003, p. 70, 2003
  118. Z.C. Feng, I.T. Ferguson, Y.T. Hou, and T.R. Yang, “Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapor deposition,” Proceedings of CLEO/Pacific Rim 2003, p. 23, 2003
  119. Z.C. Feng, L.S. Tan, S.J. Chua and Y. Sun, “Material properties of Be-implanted GaN,” ibid, page 371, 2003
  120. Z.C. Feng, “Past, Present and Prospective Development of SiC Materials, Devices and Applications,” 2nd Intern. Conf. on Materials for Advanced Technology/IUMRS-ICA 2003, page 370, Singapore, 2003
  121. T.R. Yang, Z.C. Feng and I. Ferguson, “Raman scattering study for self-organized Ge quantum dots formed on Si substrate,” Progress in Semiconductor Materials II - Electronic and Optoelectronic application, Vol. 744, M2.11.1-6, 2003
  122. H. Kang, N. Spencer, D. Nicol, Z.C. Feng, I. Ferguson, S.P. Guo, M. Pophristic & B. Peres, “X-Ray diffraction analysis of GaN and AlGaN,” MRS Symp. Proc., p.405-410, 2003
  123. Z.C. Feng, D. Talwar and I. Ferguson, “Spectroscopic properties of cubic SiC on Si,” MRS Symp. Proc., K2.14.1-6, 2003

Books:

  1. Zhe Chuan FENG, “III-Nitride Devices and Nano-Engineering,” Imperia College Press, 450 pages, 2008
  2. Zhe Chuan FENG, “III-Nitride Semiconductor Materials,” Imperia College Press, UK, 428 pages, Mar. 2006
  3. Zhe Chuan FENG, “SiC Power Materials – Devices and Applications,” Springer, Berlin, 445 pages pages, 2004
  4. Zhe Chuan FENG and Jian H. ZHAO, “Silicon Carbide: Materials, Processings and Devices,” Taylor & Francis Books, Inc., New York, 389 pages pages, 2003
  5. Zhe Chuan FENG and Raphael TSU, “Silicon Carbide: Materials, Processings and Devices,” World Scientific Publishing, Singapore, 465 pages pages, 1994
  6. Zhe Chuan FENG, “Semiconductor Interfaces, Microstructures and Devices: Properties and Application,” Institute of Physics Publishing, Bristol, 293 pages pages, 1993
  7. Zhe Chuan FENG, “Semiconductor Interfaces and Microstructures,” World Scientific Publishing, Singapore, 320 pages pages, 1992