Publication List of 彭隆瀚 Lung-Han Peng

Journal articles & book chapters:

  1. 1. S. L. Wang, B.-C. Yeh, H.-M. Wu, L.-H. Peng, C.-M. Lai, T.-S. Ko, T.-C.Lu, S.-C. Wang, and A.-H. Kung, “Optical properties of a-plane GaN strained by photo-chemically grown gallium hydro-oxide,” Phys. Stat. Solidi (a), 2008
  2. 4. C.-M. Lai, H.-M. Wu, P.-C. Huang, S.-L. Wang, and L.-H. Peng,, “Single-mode stimulated emission from prism-like GaN submicron cavities,” Appl. Phys. Lett., 90, 141106, 2007
  3. C.-J. Lai, L.-H. Peng, and A. H. Kung, “Optical interference in nonlinear photonic crystals,” Opt. lett., 32, 3200, 2007
  4. 2. B. Vincent, R. Kremer, A. Boudrioua, P. Moretti, Y.-C. Zhang, C.-C. Hsu, and L.-H. Peng, “Green light generation in a periodically poled Zn-doped LiNbO3 planar waveguide fabricated by H+ implantation,” Appl. Phys. B, 89, 235, 2007
  5. 2. L.-H. Peng, Y.-H. Chen, C.-D. Lin, L.-F. Lin, and A.-H. Kung, “Sub-micrometer domain engineering on periodically poled LiNbO3,” J. Cryst. Growth 292, 328 (2006), 2006
  6. H.-M. Wu, and L.-H. Peng, “Suppression of gate leakage current in GaN MOS devices by passivation with photo-grown Ga2O3,” Physica status solidi (c) 3, 2291 (2006), 2006
  7. C.-Y. Lu, S.-L. Wang, H.-M. Wu, and L.-H. Peng, “Characterization of GaN microcavity fabricated by wet etching,” Physica status solidi (c) 3, 2019 (2006), 2006
  8. 1. L.H. Peng, C. Y. Lu, H. M. Wu, and S. L. Wang,, “Gallium nitride microcavities formed by photo-enhanced wet oxidation,” Applied physics Letters, 87, 161902, Oct. 2005
  9. L.-H. Peng, C.-C. Hsu, and A. H. Kung, “Broad multiwavelength second-harmonic generation from two-dimensional x(2) nonlinear photonic crystals of tetragonal lattice structure,” IEEE J. of Selected Topics in QUantum Electron., 10, 1142-1148, Sept. 2004
  10. L.-H. Peng, C.-C. Hsu, J. Ng, and A. H. Kung, “Wavelength tunability of second-harmonic generation from two-dimensional x(2) nonlinear photonic crystals with a tetragonal lattice structure,” Applied Physics Letters, 84, 3250-3252, Apr. 2004
  11. L.-H. Peng, C. -M. Lai, C.-W. Shih, C.-C. Chuo, and J.-I. Chyi,, “Boundary effects on the optical properties of InGaN MQWs,” IEEE J. Selected Topics in Quantum Electron., 9,, 708, 2003
  12. L.-H. Peng, C.-C. Hsu, Y.-J. Shih,, “Second-harmonic green generation from two-dimensional x(2) nonlinear photonic crystal with orthorhombic lattice structure,” Appl. Phys. Lett., 83,, 3447, 2003
  13. L.-H. Peng, C.-W. Shih, C.-M. Lai, C.-C. Chuo, and J.-I. Chyi,, “Surface band-bending effects on the optical properties of InGaN MQWs,” Appl. Phys. Lett., 82,, 4268, 2003
  14. L.-H Peng, Y.-C. Shih, S.-M. Tsan, and C.-C. Hsu,, “Mitigation of transverse domain growth in two-dimensional polarization switching of lithium niobate,” Appl. Phys. Lett., 81,, 5210, 2002
  15. L.-H. Peng, Y. –J. Shih, and Y. –C. Zhang,, “Restrictive domain motion in polarization switching of lithium niobate,” Appl. Phys. Lett., 81,, 1666, 2002
  16. L.-H. Peng, Y. –C. Zhang, and Y. –C. Lin,, “Zinc oxide doping effects in polarization switching of lithium niobate,” Appl. Phys. Lett., 78,, 4, 2001
  17. L.-H. Peng, C. -H. Liao, Y. -C. Hsu, C. -S. Jong, C. -N. Huang, J. -K. Ho, C. -C. Chiu, and Y. -C. Chen,, “ Photo-enhanced wet oxidation of gallium nitride,” Appl. Phys. Lett., 76,, 511, 2000
  18. L. -H. Peng, Y. -C. Fang, and Y. -C. Lin,, “Polarization switching of lithium niobate with giant internal field,” Appl. Phys. Lett., 74,, 2070, 2000
  19. L. -H. Peng, Y. -C. Hsu, and C. -W. Chuang,, “Structure asymmetry effects in the optical gain of piezo-strained InGaN quantum wells,” IEEE J. Select. Topics in Quantum Electron.,, 5,, 756, 1999
  20. L. -H. Peng, C. -W. Chuang, and L. -H. Lou,, “Piezoelectric effects in the optical properties of strained InGaN quantum wells,” Appl. Phys. Lett., 74, 795, 1999

Conference & proceeding papers:

  1. 1. S.-L. Wang, B.-C. Yeh, H.-M. Wu, L.-H. Peng, C.-M Lai, T.-S Ko, T.-C Lu, S.-C Wang, and A.-H Kung, “Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide,” 7th International Conference of Nitride Semiconductors, WP106, Las Vegas, Nevada USA, Sept. 2007
  2. C.-M Lai , H.-M. Wu , P.-C. Huang , B.-C. Yeh , C.-L. Chou , and L.-H. Peng, “High Quality Factor with Fundamental Resonant Mode near the Bandedge of GaN Triangular Submicron Laser Cavity,” paper CWN-3 at CLEO 2007, Baltimore, Maryland, May 6-11, 2007, May 2007
  3. J.-W. Yu, H.-M. Wu, and L.-H. Peng, “Enhanced carrier transportation on passivated gallium nitride single nanowire field-effect transistor,” paper E5-0778 at 211th Meeting of the Electrochemical Society 2007, Chicago, Illinois, May 6-10, 2007, May 2007
  4. H.-M. Wu, P.-C.Huang, W.-H. Tu, C.-M. Lai and L.-H. Peng, “Deep Sub-micron GaN Photonic Crystal Fabricated by Self-assembly Lithography with Photo-enhanced Wet Etching,” paper TuP2-61 at International Workshop on Nitride Semiconductor 2006, Kyoto, Japan, 2006, Oct. 2006
  5. Lung-Han Peng, “‘Sub-micron domain engineering in periodical poling of QPM-LiNbO3 and LiTaO3 chi(2) nonlinear photonic crystals,”,” 3rd Asian Conference on Crystal Growth and Crystal Technology, (Beijing, PRC, Oct, 2005), Oct. 2005
  7. 1. Chao-Hung Lin, L. H. Peng, L. F. Lin, H. C. Liu, A. H. Kung, Jenq-Yang Chang, Y. H. Chen, and C. D. Lin,, “Nano-domain Engineering in Two-dimensional c(2) Nonlinear Photonic Crystal on Bulk Lithium Niobate,” paper CMW3 to be presented in CLEO 2005, Baltimore, USA, May 2005
  8. 2. C.-Y.Lu, C.-W. Chang, L.-F. Lin, C.-H. Lin, L.-H. Peng, J.-Y. Chang, and A. H. Kung, “Phase-control in photonic-crystal based lasers,” paper presented at US Air Force/Taiwan Nanoscience Initiative Workshop, Honolulu, USA, Feb. 2005
  9. H.-M. Wu, C.-Y, Lu and L.-H. Peng, “Suppression of surface leakage in GaN MOS device by crystalline Ga2O3 layer MOS,” paper Tu-P-016 presented at 6th International Conference on Nitride Semiconductors 2005, Bremen, Germany, 2005., 2005
  10. C.-Y. Lu, S.-L. Wang, H.-M. Wu, and L.-H. Peng, “Stimulated emission from GaN microcavity fabricated by wet etching,” paper Th-P-073 presented 6th International Conference on Nitride Semiconductors 2005, Bremen, Germany, 2005., 2005
  11. 2. L.-H. Peng, S.-M. Tsan, J.-C. Shih, C-C. Hsu, and A. H. Kung,, “Multi-wavelength second-harmonic generation from two-dimensional c(2) nonlinear photonic crystals,” presented in the 2004 OSA Nonlinear Optical Meeting, Hawaii, USA,, Jul. 2004
  12. C.-C. Hsu, L.-H. Peng, J. Ng, and A. H. Kung,, “Wide tuning and multi-wavelength SHG from 2D c(2) nonlinear photonic crystal of tetragonal lattice structure,” paper CThU presented at CLEO 2004, Longbeach, USA, May 2004
  13. H.-M. Wu, J.-Y. Lin, L.-H. Peng, C.-M. Lee, J.-I. Chyi, and E. Chen,, “Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation,” paper presented at International Semiconductor Device Research Symposium (ISDRS’03),, Maryland,, Dec. 2003
  14. C.-C. Hsu, Y.-C. Shih, and L.-H. Peng,, “Dispersion-activated QPM-SHG in two dimensional periodically poled LiNbO3,” paper CTuT6 at CLEO 2003,, Baltimore, USA,, May 2003
  15. L.-H. Peng, C.-W. Shih, C.-M. Lai, C.-C. Chuo, and J.-I. Chyi,, “Surface band bending effects in the optical gain of InGaN/GaN multiple quantum wells,” paper CMnX at CLEO 2003,, Baltimore, USA,, May 2003
  16. L.-H. Peng, H.-M. Wu, C. –C. Chuo, and J. –I. Chyi,, “Photo-enhanced wet oxidation and etching of GaN,” presented at the 201st meeting of the Electrochemical Society, Philadelphia, USA,, May 2002
  17. L.-H. Peng, S.-M. Tsang, Y.-C. Zhang, Y.-C. Shih, and C.-C. Hsu, “Two-dimensional polarization switching of lithium niobate,” paper CTuT5 at CLEO 2002,, Longbeach, USA,, May 2002
  18. L. -H. Peng, K. –T. Hsu, C. W. Shih, C.-C. Chuo, and J.-I. Chyi,, “Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells,” paper WC1-3 at CLEO/Pacific Rim 2001,, Chiba, Japan,, Jul. 2001
  19. L. -H. Peng, K. –T. Hsu, C. W. Shih, C.-C. Chuo, and J.-I. Chyi,, “Spontaneous polarization effects on the optical properties of piezo-strained InGaN quantum wells,” paper CThL57 at CLEO 2001,, Baltimore, USA,, May 2001
  20. L. -H. Peng, Y. -C. Zhang, and Y. -C. Lin,, “Doping effects in polarization switching of lithium niobates,” paper CMO7 at CLEO ’00,, San Francisco, U.S.A.,, May 2000
  21. L. -H. Peng, Y. -C. Hsu, C. -H. Liao, K. -T. Hsu, C. -S. Jong, C. -N. Huang, J. -K. Ho, C. -C. Chiu, and Y. -C. Chen,, “Oxidation enhanced optical response on gallium nitride,” paper CWB7 at CLEO ’00,, San Francisco, U.S.A.,, May 2000
  22. L. -H. Peng, Y. -C. Hsu, and C. -W. Chuang,, “Structural asymmetry effects in the optical properties of nitride quantum wells,” paper CTuU2 at CLEO ’99,, Baltimore, U.S.A.,, May 1999
  23. L.-H. Peng, Y. -C. Lin, and Y. -C. Fang,, “Mobility effects in polarization switching of lithium niobates,” paper CThM6 at CLEO ’99,, Baltimore, U.S.A.,, May 1999

Books:

  1. Lung-Han Peng, Han-Ming Wu, A. H. Kung, and Chih-Ming Lai, “Micro/nano engineering and characterization of ferroelectric crystals for applications in photonics,” Springer, Germany, 2008, ISBN:978-3-540-77963-6
  2. Lung-Han Peng, “Handbook of Thin Film Materials,” Academic Press, USA, 433-480 pages, 2002
  3. Lung-Han Peng, “III-nitride semiconductors: optical poperties II,” Taylor and Francis, USA, p.165-218 pages, 2002

Patents:

  1. Lung-Han Peng et al., “Method of forming a gate insulator in group III-V nitride semiconductor devices,” US 7253061, Jul. 2007
  2. Lung-Han Peng et al., “Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes,” US 7,022,597 B2, 2006
  3. Lung-Han Peng et al., ““Method of fabrication 2D ferroelectric nonlinear crystal with periodically inverted domains,”,” US 6,926,770 B1, 2005
  4. 彭隆瀚、林宜慶、房宜澂, “ 「以低電壓製作塊狀鐵電性材料區域反轉之方式」(issued 1/29/93),” 中華民國專利第186269號, 2003
  5. Lung-Han Peng, Yi-Chin Lin, and Yi-Chen Fang,, “Method for bulk periodical poling of congruent grown ferroelectric nonlinear optical crystals by low electric field,” US patent 6,295,159, 2001
  6. Lung-Han Peng, Yi-Chien Hsu, Chin-Yuan Chen, Jin-Kuo Ho, and Chao-Nien Huang, “Method for oxidizing nitride material enhanced by illumination with UV light at room temperature,” US patent 6,190,508, 2001
  7. 彭隆瀚、莊志偉、何晉國、陳金源，, “Method for etching nitride,” Japan patent 3,076,783, 2000
  8. 彭隆瀚、莊志偉、何晉國、陳金源，, “氮化物材料的蝕刻方法,” 中華民國專利第115749號, 2000
  9. 彭隆瀚、莊志偉、何晉國、陳金源，, “氮化物半導體材料的蝕刻方法,” 中華人民共和國專利第62156號, 2000
  10. 彭隆瀚、徐易千、莊志偉、何晉國、黃兆年、陳金源, “室溫紫外增益之氮化物的材料的氧化膜成長方法,” 中華民國專利第107882號, 1999
  11. Lung-Han Peng, Chih-Wei, Jin-Kuo Ho, and Chih-Yuan Chen, “Method for etching nitride,” US patent 5,895,223, 1999