研究概況
| 計畫名稱 | 主持教授 | 預算 | 執行時期 |
|---|---|---|---|
| 用於低電壓高速超大型積電之100奈米絕緣體上矽具LDD之金氧半SPICE元件模型(2/3)
NSC 93-2215-E-002-020 |
郭正邦 | 726,000 | 2004-08-01 ~ 2005-07-31 |
| 前瞻奈米紅外線光源及偵測器(1/3)(Advanced Nano Infrared Light Sources and Detectors)
NSC 94-2120-M-002-013 |
李嗣涔 | 15,000,000 | 2005-08-01 ~ 2006-07-31 |
| 前瞻性量子元件--子計畫二:砷化銦鎵--砷化鎵量子點雷射及光放大器之研製與應用(I)(Fabrication and application of InGaAs/GaAs quantum-dot lasers and optical amplifiers)
NSC 93-2215-E-002-025 |
毛明華 | 1,309,600 | 2004-08-00 ~ 2005-07-00 |
| 大角度光極化分離器之研製(3/3)(Design and Fabrication of Wide-Angle Polarization Splitter)
NSC93-2215-E-002-004 |
王維新 | 4,274,600 | 2004-08-01 ~ 2005-07-31 |
| 奈米能源光電科技研究(2/3) | 吳忠幟 | 13,000,000 | 2008-08-00 ~ 2009-07-00 |
| 矽鍺量子點奈米級記憶元件及陣列之製作與研究(2/3)(Nano-scale SiGe quantum-dot memory and array)
NSC 94-2215-E-002-003 |
管傑雄 | 1,842,600 | 2005-08-01 ~ 2006-07-31 |
| 前瞻矽鍺/高介電質/金屬閘極元件與模組技術--子計畫四:矽鍺/高介電質/金屬閘極光電元件與模組技術(Advanced SiGe/high-k/metal gate Devices and Technologies: Subproject IV: Advanced SiGe/high-k/metal gate Devices and Technologies)
NSC 93-2215-E-002-017 |
劉致為 | 1,689,600 | 2004-08-01 ~ 2005-07-31 |
| 前瞻性量子元件--子計畫三:長波長1.3微米GaAsSb量子井與InAs/InGaAs量子點面射型雷射的研究
NSC 93-2215-E-002-026 |
楊英杰 | 747,000 | 2004-08-01 ~ 2005-07-31 |
| 前瞻性量子元件--總計畫(I)(Novel quantum devices)
NSC 93-2215-E-002-024 |
林浩雄 | 792,000 | 2004-08-01 ~ 2005-07-31 |
| 前瞻性量子元件技術--子計畫一:砷銻化鎵/砷化鎵第二型量子井雷射(I)(GaAsSb type II quantum devices)
NSC 93-2215-E-002-023 |
林浩雄 | 1,673,800 | 2004-08-01 ~ 2005-07-31 |
| 砷銻化銦中紅外線材料與元件(2/2)(InAsSb mid-infrared materials and devices (2/2))
NSC 93-2215-E-002-013 |
林浩雄 | 1,770,800 | 2004-08-01 ~ 2005-07-31 |
| 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(1/3)(Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (1/3))
NSC 93-2215-E-002-016 |
胡振國 | 1,473,800 | 2004-08-01 ~ 2005-07-31 |
| 快速熱製程氧化層之均勻度與應力效應研究(3/3)(Study on The Oxide Uniformity and Stress Effect in Rapid Thermal Processing (3/3))
NSC 93-2215-E-002-001 |
胡振國 | 1,309,000 | 2004-08-01 ~ 2005-07-31 |
| 一維奈米碳管/線合成,奈米複合結構及可調式CMOS奈米管振盪器研製-子計畫三:可調CMOS奈米碳管振盪器研製(1/3)
NSC 93-2218-E-002-126 |
楊英杰 | 9,468,000 | 2004-08-01 ~ 2005-07-31 |
| 高性能主動矩陣有機電激發光顯示:關鍵材料、元件與技術研究--子計畫三:AMOLED關鍵TFT元件及介質薄膜技術研究(1/3)(The Key AMOLED TFT Transistor and Dielectric Thin Film Technology)
NSC 93-2215-E-002-046 |
李嗣涔 | 1,350,800 | 2004-08-01 ~ 2005-07-31 |
| 整合奈米螺旋碳管與微機電系統的能源擷取器(Nano carbon coils fully integrated with microsystems for inductive energy harvesting)
NSC 96-2221-E-002-259-MY3 |
林致廷 | 2 | 2007-08-00 ~ 2009-07-00 |
| 微電子工程學門研究發展及推動規劃(1/3)(Research and Development of Micro Electronics Division (1/3))
NSC 94-2217-E-002-016 |
胡振國 | 929,000 | 2005-12-01 ~ 2006-11-30 |
| 先進CMOS元件及製程研究 - 子計畫一 :適用於低溫基板製程之高品質絕緣膜形成技術(1/3)(Study of Advanced CMOS Devices and Processes - Subproject 1: Technologies of Forming High Quality Insulating Films for Low Substrate Temperarue Process (1/3))
NSC 94-2215-E-002-044 |
胡振國 | 1,377,000 | 2005-08-01 ~ 2006-07-31 |
| 結合奈米結構及光子晶體之紅外線光源與偵測器(1/3)(Infrared Light Emitter and Photodetector by Combining Nano-Structure and Photonic Crystal)
NSC 94-2215-E-002-042 |
李嗣涔 | 2,512,000 | 2005-08-01 ~ 2006-07-31 |
| 以液相氧化技術成長高介電常數聞聞極介電層之製程與電特性研究(Study on the Process Development and Electrical Characterization of High-k Gate Dielectrics by Liquid Phase Oxidation Technique) | 胡振國 | 800,000 | 2004-01-01 ~ 2004-12-31 |
| 先進無線生醫保健監測系統之開發F分項:先進可攜式無線通訊生物醫學檢測系統之開發(Wireless Health Advanced Monitoring Bio-Diagnoisi System Wireless Advanced Portable Bio-Diagnosis System, WAP-BioS)
95-EC-17-A-05-S1-0017 |
呂學士 | 2,998,500 | 2006-12-01 ~ 2008-11-30 |
| 奈米紅外線 (1~300um) 光源及偵測器 (2/3)(Nano-infrared Light (1~300um) Emitters and Detectors (2/3))
NSC 92-2120-M-002_029 |
李嗣涔 | 10,465,500 | 2003-12-01 ~ 2004-12-31 |
| 奈米紅外線 (1~300um) 光源及偵測器 (3/3)(Nano-infrared Light (1~300um) Emitters and Detectors (3/3))
NSC 94-2120-M-002_001 |
李嗣涔 | 11,284,000 | 2005-01-01 ~ 2005-12-31 |
| 非可見光元件與技術之研究及其在植物生長之應用-子計畫一:INASSB紅外線元件及奈米(In AsSb Infrared Devices and Quantum Dot Nanostructure)
NSC 90-2215-E002-014 |
李嗣涔 | 1,550,800 | 2001-08-01 ~ 2002-07-31 |
| 奈米紅外線(1∼300 um)光源及偵測器(Nano-infrared Light (1~300um) Emitters and Detectors (1/3))
NSC 91-2120-M-002-002 |
李嗣涔 | 17,664,900 | 2002-08-01 ~ 2003-12-31 |
| 非可見光元件與技術之研究及其在植物生長之應用-總計畫:非可見光元件與技術之研究(Studies of Invisible Light Device and Technology and Their Application to the Plant Growth)
NSC 90-2215-E002-013 |
李嗣涔 | 1,911,000 | 2001-08-01 ~ 2002-07-31 |
| 金屬誘導低溫複晶矽薄膜電晶體元件研究(Studies of Matal Induced Low Temperature Poly-Si Thin Film Transistors) | 李嗣涔 | 500,000 | 2001-01-01 ~ 2001-12-31 |
| 奈米紅外線(1∼300 um)光源及偵測器(Nano-infrared Light (1~300um) Emitters and Detectors (1/3))
NSC 91-2120-M-002-002 |
李嗣涔 | 17,664,900 | 2002-08-01 ~ 2003-12-31 |
| 子計畫一:INASSB紅外線元件及奈米量子點結構(3/3)(InAsSb Infared Device and Nanometer Quantum Dot Structure)
NSC 90-2215-E-002-014 |
李嗣涔 | 1,550,800 | 2001-08-01 ~ 2002-07-31 |
| 金屬誘導低溫複晶矽薄膜電晶體元件研究(Studies of Matal Induced Low Temperature Poly-Si Thin Film Transistors) | 李嗣涔 | 536,000 | 2002-01-01 ~ 2002-12-31 |
| 非晶矽氘及多晶矽材料及元件之研究(3/3)(Studeis of Amorphous Silicon (Germanium) Hydrogen Material and Devices (3/3))
NSC 90-2215-E-002-042 |
李嗣涔 | 2,343,600 | 2001-08-01 ~ 2002-07-31 |
| 奈米線或奈米碳管元件製程技術(The Frbrication Technologies of Nanowire and Carbon Nanotube Devices) | 李嗣涔 | 600,000 | 2003-01-01 ~ 2003-12-31 |
| 總計畫:非可見光元件與技術之研究及其在植物生長之應用(3/3)(Studies of Invisible Light Device and Technology and Their Application to the Plant Growth)
NSC 90-2215-E-002-013 |
李嗣涔 | 1,911,000 | 2001-08-01 ~ 2002-07-31 |
| 正向入射INGAAS系列多重量子井偵檢元件研究(III)(Studies of Normal Incidence InGaAs Multiple Quantum Well Detectors)
NSC 90-2623-7-002-003 |
李嗣涔 | 500,000 | 2001-01-01 ~ 2001-12-31 |
| 子計畫一:INASSB紅外線元件及奈米量子點結構(InAsSb Infared Device and Nanometer Quantum Dot Structure)
NSC 89-2215-E-002-057 |
李嗣涔 | 1,204,100 | 2000-08-01 ~ 2001-07-31 |
| 四端低溫複晶矽薄膜電晶體之製程與穩定度(The Frbrication Processes and Stability of Four Terminal Low Temperature Poly-Si Thin Film Transistors) | 李嗣涔 | 780,000 | 2002-07-01 ~ 2003-06-30 |
| 以吸熱/隔絕層增大晶粒之多晶矽薄膜電晶體元件(Poly-Si Thin Film Transistor Fabricated by using Absorbing /Isolation layer to Enlarge the Grain Size) | 李嗣涔 | 750,000 | 2003-06-01 ~ 2003-12-31 |
| 非可見光元件與技術之研究及其在植物生長之應用(2/3)-總計畫(Studies of Invisible Light Device and Technology and Their Application to the Plant Growth)
NSC 89-2215-E-002-056 |
李嗣涔 | 305,200 | 2000-08-01 ~ 2001-07-31 |
| 高性能主動矩陣有機電激發光顯示:關鍵材料、元件與技術研究--子計畫三:AMOLED關鍵TFT元件及介質薄膜技術研究(2/3)(The Key AMOLED TFT Transistor and Dielectric Thin Film Technology)
NSC 94-2218-E-002-011 |
李嗣涔 | 1,532,000 | 2005-08-01 ~ 2006-07-31 |
| 可低偏高溫操作且正向頂面入射的超晶格紅外線偵測器及陣列的研發(1/3)(Development of the Superlattice Infrared Photodetector and Array for Low-Bias High-Temperature Operation and Top Normal Incidence of Light)
NSC 94-2215-E-002-017 |
管傑雄 | 1,409,000 | 2005-08-01 ~ 2006-07-31 |
| 從高性能到高度可捲曲軟性電晶體技術研究(2/3) | 吳忠幟 | 5,600,000 | 2008-08-00 ~ 2009-07-00 |
| 先進CMOS元件及製程研究 -總計畫(1/3)(Study of Advanced CMOS Devices and Processes (1/3))
NSC 94-2215-E-002-047 |
胡振國 | 2,485,000 | 2005-08-01 ~ 2006-07-31 |
| 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(2/3)(Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (2/3))
NSC 94-2215-E-002-004 |
胡振國 | 1,659,000 | 2005-08-01 ~ 2006-07-31 |
| 100奈米以下之SOI CMOS元件之Fringing電場效應分析(Analysis of Fringing Electric Fields Effects of Sub-100nm SOI CMOS Devices) | 郭正邦 | 900 | 2005-01-00 ~ 2005-12-00 |
| 正向入射InGaAs系列多重量子井偵檢元件研究(Ⅱ)(Study of Normal Incident InGaAs Multiple Quantum Well Detectors (II))
NSC 89-2623-7-002-001 |
李嗣涔 | 300,000 | 2000-07-01 ~ 2000-12-31 |
| 非晶矽氘及多晶矽材料及元件之研究(2/3)(Studeis of Amorphous Silicon (Germanium) Hydrogen Material and Devices (2/3))
NSC 89-2218-E-002-092 |
李嗣涔 | 2,310,800 | 2000-08-01 ~ 2001-07-31 |
| 中紅外線化合物半導體材料與元件(1/2)(Mid-infared compound semiconductor materials and devices)
NSC 94-2215-E002-016 |
林浩雄 | 1,685,000 | 2005-08-01 ~ 2006-07-31 |
| GaAsSb/GaAs量子結構與元件(1/2)(GaAsSb/GaAs quantum structure for photonic devices)
NSC 94-2215-E002-043 |
林浩雄 | 1,744,000 | 2005-08-01 ~ 2006-07-31 |
| 高效率多接面疊接太陽電池的新型材料研究(Novel materials for high-efficiency tandem solar cell)
NSC 95-NU-7-002-001 |
林浩雄 | 577,000 | 2005-01-01 ~ 2005-12-31 |
| 有機電荷導體合成與性質研究(1/3-3/3) | 吳忠幟 | 1,560,000 | 2003-08-01 ~ 2006-07-31 |
| 全彩有機電激發光顯示研究(1/3-3/3) | 吳忠幟 | 5,360,000 | 2003-08-01 ~ 2006-07-31 |
| 高性能主動矩陣有機電激發光顯示:關鍵材料、元件與技術研究-總計畫(1/3-3/3) | 吳忠幟 | 6,170,000 | 2004-08-01 ~ 2007-07-31 |
| 高性能主動矩陣有機電激發光顯示:關鍵材料、元件與技術研究-子計畫二 | 吳忠幟 | 4,120,000 | 2004-08-01 ~ 2007-07-31 |
| 倒置型有機發光元件研究 | 吳忠幟 | 600,000 | 2005-01-01 ~ 2005-12-31 |
| A new active-drive white PLED/OLED technology | 吳忠幟 | 900,000 | 2005-01-01 ~ 2005-12-31 |
| 有機發光元件研究(I) | 吳忠幟 | 1,200,000 | 2005-01-00 ~ 2005-12-00 |
| 增進顯示色彩飽和度之光學模擬技術 | 吳忠幟 | 500,000 | 2005-07-01 ~ 2006-06-30 |
| 高性能有機發光照明技術:關鍵材料、元件與技術研究(3/3) | 吳忠幟 | 7,000,000 | 2007-11-00 ~ 2008-10-00 |
| 砷化銦鎵-砷化鎵量子點光電元件之研製與應用(1/2)(Fabrication and application of InGaAs/GaAs quantum-dot optoelectronic devices(1/2))
NSC 94-2215-E-002-046 |
毛明華 | 1,579,000 | 2005-08-00 ~ 2006-07-00 |
| 砷化銦鎵-砷化鎵量子點雷射之研製與應用(Fabrication and Characterization of InGaAs/GaAs Quantum-Dot Lasers)
NSC 92-2218-E-002-027 |
毛明華 | 1,493,700 | 2003-08-00 ~ 2004-07-00 |
| 砷化銦鎵-砷化鎵量子點雷射之研製與應用(Fabrication and Characterization of InGaAs/GaAs Quantum-Dot Lasers)
NSC 91-2120-E-002-006 |
毛明華 | 1,506,700 | 2002-08-00 ~ 2003-07-00 |
| 鈮酸鋰藍光波導元件之研製(1/3)(Design and Fabrication of Lithium Niobate Blue Laser Waveguide Devices(1/3))
NSC94-2215-E-002-020 |
王維新 | 2,299,000 | 2005-08-01 ~ 2006-07-31 |
| 生物分子馬達於奈微米流體管道運作模式之分析(High fidelity statistical model and experiment for kinesin-driven microtubule gliding in nano/micro-fabricated open channel)
NSC 95-2218-E-002-061 |
林致廷 | 931 | 2006-10-00 ~ 2007-07-00 |
| 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(3/3)(Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (3/3))
NSC 95-2221-E-002-375 |
胡振國 | 1,706,000 | 2006-08-01 ~ 2007-07-31 |
| 先進CMOS元件及製程研究 -總計畫(2/3)(Study of Advanced CMOS Devices and Processes (2/3))
NSC 95-2221-E-002-367 |
胡振國 | 2,307,000 | 2006-08-01 ~ 2007-07-31 |
| 先進CMOS元件及製程研究 - 子計畫一 :適用於低溫基板製程之高品質絕緣膜形成技術(2/3)(Study of Advanced CMOS Devices and Processes - Subproject 1: Technologies of Forming High Quality Insulating Films for Low Substrate Temperarue Process (2/3))
NSC 95-2221-E-002-358 |
胡振國 | 1,587,000 | 2006-08-01 ~ 2007-07-31 |
| 微電子工程學門研究發展及推動規劃(2/3)(Research and Development of Micro Electronics Division (2/3))
NSC 95-2217-E-002-002 |
胡振國 | 1,017,000 | 2006-12-01 ~ 2007-11-30 |
| 前瞻奈米紅外線光源及偵測器(2/3)(Advanced Nano Infrared Light Sources and Detectors)
NSC 95-2120-M-002-007 |
李嗣涔 | 10,000,000 | 2006-08-01 ~ 2007-07-31 |
| 高性能主動矩陣有機電激發光顯示:關鍵材料、元件與技術研究--子計畫三:AMOLED關鍵TFT元件及介質薄膜技術研究(3/3)(The Key AMOLED TFT Transistor and Dielectric Thin Film Technology)
NSC 95-2221-E-002-298 |
李嗣涔 | 1,412,000 | 2006-08-01 ~ 2007-07-31 |
| 結合奈米結構及光子晶體之紅外線光源與偵測器(2/3)(Infrared Light Emitter and Photodetector by Combining Nano-Structure and Photonic Crystal)
NSC 95-2221-E-002-356 |
李嗣涔 | 2,912,000 | 2006-08-01 ~ 2007-07-31 |
| 家用型雙波段乳癌紅外線診斷系統(1/3)(A Novel Household Dual-Spectrum IR Imaging System for Breast Cancer Detection)
NSC 95-2218-E-002-067 |
李嗣涔 | 7,489,000 | 2006-11-01 ~ 2007-10-31 |
| 砷化銦鎵-砷化鎵量子點光電元件之研製與應用(2/2)(Fabrication and application of InGaAs/GaAs quantum-dot optoelectronic devices(2/2))
NSC 95-2221-E-002-363 |
毛明華 | 1,616,000 | 2006-08-00 ~ 2007-07-00 |
| 先進CMOS元件及製程研究 -總計畫 (3(/3)(Study of Advanced CMOS Devices and Processes (3/3))
NSC 96-2221-E-002-286 |
胡振國 | 1,797,000 | 2007-08-01 ~ 2008-07-31 |
| 先進CMOS元件及製程研究 - 子計畫一 :適用於低溫基板製程之高品質絕緣膜形成技術(3/3)(Study of Advanced CMOS Devices and Processes - Subproject 1: Technologies of Forming High Quality Insulating Films for Low Substrate Temperarue Process (3/3))
NSC 96-2221-E-002-244 |
胡振國 | 1,587,000 | 2007-08-01 ~ 2008-07-31 |
| 超薄絕緣層新穎製程開發及其在矽金氧半元件之應用(1/3)(Novel Process Development for Ultra-thin Insulators and Its Application on Silicon MOS Devices (1/3))
NSC 96-2628-E-002-246-MY3 |
胡振國 | 1,285,000 | 2007-08-01 ~ 2010-07-31 |
| 微電子工程學門研究發展及推動規劃(3/3)(Research and Development of Micro Electronics Division (3/3))
NSC 96-2217-E-002-002 |
胡振國 | 1,147,000 | 2007-12-01 ~ 2008-12-31 |
| 矽基光電元件(Si-based optoelectronics)
NSC96-2221-E-002-277-MY3 |
林清富 | 4,140,000 | 2007-08-01 ~ 2010-07-31 |
| 有機無機混成薄膜太陽能電池: 提高功率轉換效率之材料與元件特性研究(2/3)(Organic/Inorganic Composite Thin-Film Solar Cell: Investigation of Material/Device Characteristics to Improve Power Conversion (2/3))
97-2218-E-002-013 |
林清富 | 5,310,000 | 2008-08-01 ~ 2009-07-31 |
| 考慮邊際電場效應之次九十奈米互補金氧半超大型積電精簡元件模型(3/3)
NSC 96-2221-E-002-246 |
郭正邦 | 1,606,000 | 2007-08-01 ~ 2008-07-31 |
| Modeling STI Mechanincal Stress Related Floating Body Effects of Nanometer PD SOI CMOS Devices | 郭正邦 | 2,876,400 | 2007-06-01 ~ 2008-05-31 |
| 前瞻奈米紅外線光源及偵測器(3/3)(Advanced Nano Infrared Light Sources and Detectors)
NSC 956-2120-M-002-003- |
李嗣涔 | 10,000,000 | 2007-08-01 ~ 2008-07-31 |
| 結合奈米結構及光子晶體之紅外線光源與偵測器(3/3)(Infrared Light Emitter and Photodetector by Combining Nano-Structure and Photonic Crystal)
NSC 96-2221-E-002-242 |
李嗣涔 | 2,912,000 | 2007-08-01 ~ 2008-07-31 |
| 家用型雙波段乳癌紅外線診斷系統(2/3)(A Novel Household Dual-Spectrum IR Imaging System for Breast Cancer Detection)
NSC 96-2218-E-002-012- |
李嗣涔 | 6,587,000 | 2007-11-01 ~ 2008-10-31 |
| 量子結構雙波段紅外線焦平面陣列元件製作(Fabrication of Dual Band Quantum Structure Infrared photodetector Focal Plane Array)
NSC 97-2623-7-002-003-D |
李嗣涔 | 576,000 | 2008-01-01 ~ 2008-12-31 |
| 鈮酸鋰藍光波導元件之研製(2/3)(Design and Fabrication of Lithium Niobate Blue Laser Waveguide Devices (2/3))
NSC95-2221-E-002-383 |
王維新 | 2,236,000 | 2006-08-01 ~ 2007-07-31 |
| 鈮酸鋰藍光波導元件之研製(3/3)(Design and Fabrication of Lithium Niobate Blue Laser Waveguide Devices (3/3))
NSC96-2221-E-002-096 |
王維新 | 2,236,000 | 2007-08-01 ~ 2008-07-31 |
| 以紫外光照射法製造聚合物光波導(Design and Fabrication of UV-Induced Polymer Waveguides)
NSC95-2221-E-002-326-MY3 |
王維新 | 6,425,000 | 2006-08-01 ~ 2009-07-31 |
| 中紅外線化合物半導體材料與元件(2/2)(Mid-infred compound semiconductor materials and devices)
NSC 95-2221-E-002-355 |
林浩雄 | 1,717,000 | 2006-08-01 ~ 2007-07-31 |
| GaAsSb/GaAs量子結構與元件(2/2)(GaAsSb/GaAs quantum structure for photonic devices)
NSC 95-2221-E-002-368 |
林浩雄 | 1,849,000 | 2006-08-01 ~ 2007-07-31 |
| 三五族多接面疊接太陽電池之研究(III-V multijunction solar cell)
NSC 96-NU-7-002-003 |
林浩雄 | 607,000 | 2007-01-01 ~ 2007-12-31 |
| 中紅外線光電半導體材料與元件的研究(Mid-infrared optoelectronic semiconductor materials and devices)
NSC 96-2221-E-002-279-MY3 |
林浩雄 | 3,370,000 | 2007-08-01 ~ 2010-07-31 |
| 砷化鎵基含銻化合物半導體材料與元件之研究(GaAsSb-based compound semiconductor materials and devices)
NSC 96-2628-E-002-247-MY3 |
林浩雄 | 5,592,000 | 2007-08-01 ~ 2010-07-31 |
| GaAsSbN的MBE成長及其於多接面太陽能電池的應用(Studies on the MBE growth of GaAsSbN and its application on multijunction solar cells)
NSC 97-NU-7-002-002 |
林浩雄 | 676,000 | 2008-01-01 ~ 2008-12-31 |
| 中紅外線偵測器與發光二極體元件之製作(Fabrication of mid-infrared detectors and light-emitting diodes)
96-S-B70 |
林浩雄 | 1,000,000 | 2007-09-01 ~ 2008-08-31 |
| 新型含銻材料應用於異質接面電晶體的開發研究(Novel Sb-based materials for heterojunction bipolar transistors)
96-S-B62 |
林浩雄 | 600,000 | 2007-09-01 ~ 2008-08-31 |
| 長波長矽鍺金氧半光電元件(3/3)(Long Wavelength SiGe MOS Optoelectrical Devices (3/3))
NSC 96-2221-E-002-251- |
劉致為 | 2,372,000 | 2007-08-01 ~ 2008-07-31 |
| 應用電漿浸沒離子佈植(PIII)與晶圓鍵結技術製造SOI及GOI半導體材料研究 (2/3)(Fabrication of SOI and GOI by Plasma Imersion Ion Implantation (PIII) and Wafer Bonding Technologies (2/3)) | 劉致為 | 0 | 0000-00-00 ~ 0000-00-00 |
| 應用於矽/鍺奈米尺寸堆疊結構之表面與應力研究 (1/3)(Surface and Strain Effect on Nanoscale Layered Solids with Applications on Si/Ge (1/3))
NSC 95-2218-E-002-065-MY3 |
劉致為 | 362,000 | 2006-10-01 ~ 2007-08-30 |
| 應用於矽/鍺奈米尺寸堆疊結構之表面與應力研究 (2/3)(Surface and Strain Effect on Nanoscale Layered Solids with Applications on Si/Ge (2/3)) | 劉致為 | 0 | 2007-10-01 ~ 2008-09-30 |
| 應用於CMOS影像感測器上的透明膜玻璃雷射切割技術(Laser Cutting Technique of Transparent Glass Film and Applications on CMOS Image Sensor)
NSC 95-2622-E-002-015-CC3 |
劉致為 | 405,000 | 2006-05-01 ~ 2007-04-30 |
| 前瞻矽鍺/高介電質/金屬閘極元件與模組技術--總計畫(Advanced SiGe/high-k/metal gate Devices and Technologies: Primary Project)
NSC 93-2215-E-002-018- |
劉致為 | 1,315,600 | 2004-08-01 ~ 2005-07-31 |
| 絕緣層上鍺的技術和量測(The Technique and Measurement of Ge-on-Insulator)
NSC 94-2622-E-002-010-CC3 |
劉致為 | 312,000 | 2005-05-01 ~ 2006-04-30 |
| 奈米能源光電科技研究(1/3) | 吳忠幟 | 13,000,000 | 2007-08-00 ~ 2008-07-00 |
| 從高性能到高度可捲曲軟性電晶體技術研究(1/3) | 吳忠幟 | 5,800,000 | 2007-08-00 ~ 2008-07-00 |
| 新式砷化鎵量子點雷射(Novel GaAs Quantum-Dot Lasers)
NSC 96-2221-E-002-269 |
毛明華 | 1,114,000 | 2007-08-00 ~ 2008-07-00 |
| 矽鍺電制吸收元件之量子侷限史塔克效應(Quantum-Confined Stark Effect (QCSE) in SiGe Electroabsorption Devices)
95-2218-E-002-069- |
郭宇軒 | 0 | 2006-11-00 ~ 2007-07-00 |
| 絕緣層上覆鍺之熱光吸收光調變器(Germanium-on-insulator thermo-optic absorption modulators)
96-2221-E-002-272-MY2 |
郭宇軒 | 0 | 2007-08-00 ~ 2009-07-00 |
| 高速矽鍺電制吸收光調變器(High-speed SiGe Electroabsorption Modulators)
96-2221-E-002-267-MY3 |
郭宇軒 | 0 | 2007-08-00 ~ 2010-07-00 |
| Sllicon-Gemanium Electroabsorption Device for interconnections:Process integration and Device Optimization under CMOS Environment(Sllicon-Gemanium Electroabsorption Device for interconnections:Process integration and Device Optimization under CMOS Environment)
96E1018 |
郭宇軒 | 0 | 2007-01-00 ~ 2007-12-00 |
| 超薄絕緣層新穎製程開發及其在矽金氧半元件之應用(2/3)(Novel Process Development for Ultra-thin Insulators and Its Application on Silicon MOS Devices (2/3))
NSC96-2628-E-002-246-MY3 |
胡振國 | 1,777,000 | 2008-08-01 ~ 2010-07-31 |
| 後矽電子之增強技術 - 總計畫(1/3)(Main Project: Enabling technologies to enhance post-Si electronics(1/3))
NSC97-2221-E-002-233-MY3 |
胡振國 | 1,887,000 | 2008-08-01 ~ 2011-07-31 |
| 後矽電子之增強技術 - 子計畫一 : 碳化矽上新穎絕緣層技術 (1/3)(Enabling technologies to enhance post-Si electronics - Subproject 1: Novel Dielectrics on SiC(1/3))
NSC97-2221-E-002-231-MY3 |
胡振國 | 1,920,000 | 2008-08-01 ~ 2011-07-31 |
| 奈米半導體結構及有機合成薄膜光電元件(Optoelectronics based on nano-structured semiconductor-organic composite film)
NSC97-2221-E-002-039-MY3 |
林清富 | 4,378,000 | 2008-08-01 ~ 2011-07-31 |
| 利用奈米結構和光子晶體研製雷射和光源(3/3)(lasers and light sources based on nano-structures and photonic)
95-2112-M-002-004 |
林清富 | 920,000 | 2006-08-01 ~ 2007-07-31 |
| 奈米結構建製光子訊路系統(3/3)(Nano-photonic Circuitry(3/3))
NSC95-2120-M-002-001 |
林清富 | 13,997,240 | 2006-08-01 ~ 2007-07-31 |
| 利用奈米結構和光子晶體研製雷射和光源(2/3)(lasers and light sources based on nano-structures and photonic)
NSC94-2112-M-002-009 |
林清富 | 896,000 | 2005-08-01 ~ 2006-07-31 |
| 奈米結構建製光子訊路系統(2/3)(Nano-photonic Circuitry(2/3))
94-2120-M-002-010 |
林清富 | 14,500,000 | 2005-08-01 ~ 2006-07-31 |
| 利用奈米結構和光子晶體研製雷射和光源(1/3)(lasers and light sources based on nano-structures and photonic)
93-2112-M-002-032 |
林清富 | 1,210,000 | 2004-08-01 ~ 2005-07-31 |
| 奈米結構建製光子訊路系統(1/3)(Nano-photonic Circuitry(1/3))
NSC93-2120-M-002-011 |
林清富 | 13,674,500 | 2004-08-01 ~ 2005-07-31 |
| 奈米光粒子合成、主動光閘晶體結構製作與應用--子計畫二:奈米粒子與光學晶體上之光電元件製作和研究(2/2)(Fabrication and investigation of optoelectronic devices based on nano-particles and photonic crystals(2/2))
NSC92-2120-E-002-003 |
林清富 | 1,388,800 | 2003-08-01 ~ 2004-07-31 |
| 矽基板上之發光元件(I)(electroluminescent device on a silicon chip(I))
NSC94-2622-E-002-005 |
林清富 | 2,445,900 | 2005-03-01 ~ 2006-05-31 |
| 產學合作計畫:間接能隙材料電激發光之研究(3/3)(Electroluminescence based on indirect-bandgap materials(3/3))
NSC92-2622-L-002-001 |
林清富 | 5,744,600 | 2003-08-01 ~ 2004-07-31 |
| 極寬頻半導體光放大器(2/2)(Extremely broad-band semiconductor optical amplifiers(2/2))
NSC92-2215-E-002-012 |
林清富 | 1,245,300 | 2003-08-01 ~ 2004-07-31 |
| 奈米光粒子合成、主動光閘晶體結構製作與應用--奈米粒子與光學晶體上之光電元件製作和研究(1/2)(Fabrication and investigation of optoelectronic devices based on nano-particles and photonic crystals(1/2))
NSC91-2120-E-002-012 |
林清富 | 1,399,600 | 2002-08-01 ~ 2003-07-31 |
| 產學合作計畫:間接能隙材料電激發光之研究(2/3)(Electroluminescence based on indirect-bandgap materials(2/3))
NSC91-2622-L-002-004 |
林清富 | 7,861,300 | 2002-04-01 ~ 2003-07-31 |
| 極寬頻半導體光放大器(1/2)(Extremely broad-band semiconductor optical amplifiers(1/2))
NSC91-2215-E-002-025 |
林清富 | 1,569,300 | 2002-08-01 ~ 2003-07-31 |
| 非可見光元件與技術之研究及其在植物生長之應用--子計畫三:利用半導體雷射幫浦技術以產生可調波長紅外光(3/3)(Tunable wavelength IR generation using Semiconduuctor-laser-pumped technology(3/3))
90-2215-E-002-016 |
林清富 | 1,109,300 | 2001-08-01 ~ 2002-07-31 |
| 產學合作計畫:間接能隙材料電激發光之研究--間接能隙材料電激發光之研究(1/3)(Electroluminescence based on indirect-bandgap materials(1/3))
NSC90-2622-L-002-002 |
林清富 | 6,659,000 | 2001-04-01 ~ 2002-06-30 |
| 半導體雷射之鎖模與載體動態(Mode-Locking and Car r ier Dynamics of Semiconductor Lasers)
NSC89-2112-M-002-034 |
林清富 | 1,040,900 | 1999-08-01 ~ 2000-07-31 |
| 非可見光元件與技術之研究及其在植物生長之應用(1/3)--子計畫三:利用半導體雷射幫浦技術以產生可調波長紅外光(Tunable wavelength IR generation using Semiconduuctor-laser-pumped technology)
NSC89-2215-E-002-016 |
林清富 | 1,100,200 | 1999-08-01 ~ 2000-07-31 |
| 非可見光元件與技術之研究及其在植物生長之應用(2/3)--子計畫三:利用半導體雷射幫浦技術以產生可調波長紅外光(Tunable wavelength IR generation using Semiconduuctor-laser-pumped technology)
NSC89-2215-E-002-059 |
林清富 | 1,100,200 | 2000-08-01 ~ 2001-07-31 |
| 鎖模半導體雷射之物理機制(Mode-Locking and Carrier Dynamics of Semiconductor-Lasers)
NSC89-2112-M-002-076 |
林清富 | 1,257,000 | 2000-08-01 ~ 2001-10-31 |
| 半導體雷射之鎖模與載體動態研究(Mode-Locking and Car r ier Dynamics of Semiconductor Lasers)
NSC88-2112-M-002-038 |
林清富 | 667,800 | 1998-08-01 ~ 1999-07-31 |
| 環保及生化用紅外線光源--子計畫三:半導體雷射幫浦光參振盪以產生可調式紅外光(III)(Tunable Infrared Emission by Semiconductor Laser -Pumped Optical Parametr ic Oscillation(III))
NSC88-2215-E-002-021 |
林清富 | 998,500 | 1998-08-01 ~ 1999-07-31 |
| 半導體工程人才培育計畫--子計畫五:半導體雷射之量測(3/3)(Measurement of semiconductor laser)
NSC87-2215-E-002-012 |
林清富 | 360,400 | 1997-08-01 ~ 1998-07-31 |
| 多波長半導體雷射中帶內能階轉移與光之交戶作用
NSC86-2112-M-002-025 |
林清富 | 472,000 | 1996-08-01 ~ 1997-10-31 |
| 半導體工程人才培育計畫--半導體工程人才培育計畫:子計畫五:半導體雷射之量測(II)(Measurement of semiconductor laser(II))
NSC85-2512-S-002-007-EE |
林清富 | 367,500 | 1996-05-01 ~ 1997-07-31 |
| 光電半導體現象及應用--被動鎖模半導體雷射(Characteristics and applications on optoelectronic semiconductor—Passive mode-locked semiconductor laser)
NSC85-2215-E-002-002 |
林清富 | 931,300 | 1995-08-01 ~ 1996-07-31 |
| 在半導體雷射中帶內能階轉移與光之交互作用
NSC85-2112-M-002-018 |
林清富 | 273,000 | 1995-08-01 ~ 1996-07-31 |
| 在半導體雷射中帶內能階轉移與光之交互作用
NSC85-2112-M-002-018 |
林清富 | 950,000 | 1995-08-01 ~ 1996-07-31 |
| 半導體工程人才培育計畫--半導體工程人才培育計畫:子計畫五:半導體雷射之量測(Measurement of semiconductor laser)
NSC84-2512-S-002-009 |
林清富 | 304,500 | 1995-05-01 ~ 1996-04-30 |
| 半導體超快光電現象研究--半導體內超快光電現象研究:子計畫三--被動鎖模半導體雷射(Passive mode-locked semiconductor laser)
NSC84-2215-E-002-013 |
林清富 | 695,000 | 1994-08-01 ~ 1995-07-31 |
| 具強烈耦合空輔助腔之複合腔鎖模半導體雷射的理論分析
NSC83-0417-E-002-011 |
林清富 | 241,000 | 1994-02-01 ~ 1994-07-31 |
| 軟體無線電系統晶片-子計畫一:軟體無線電射頻前端電路(An RF front-end for Software-Defined Radio)
97-2221-E-002-240- |
呂學士 | 995,000 | 2008-08-01 ~ 2009-07-31 |
| 生醫感測網路上身晶片系統-子計畫一:近身生醫感測收發單晶電路(Intrabody biomedical communication SoC)
97-2221-E-002-153-MY3 |
呂學士 | 4,031,000 | 2008-08-01 ~ 2011-07-31 |
| 軟體無線電系統晶片-總計畫(SOC for Software-Defined Radio)
97-2221-E-002-245- |
呂學士 | 1,382,000 | 2008-08-01 ~ 2009-07-31 |
| 60 GHz無線生醫感測網路晶片系統(3/3)
97-2218-E-002-001- |
呂學士 | 4,476,000 | 2008-02-01 ~ 2009-01-31 |
| 國科會50科學之旅:第三類接觸-無線感測器科技之旅(Close Encounters of the Third Kind - The Travel of the wireless sensor networks)
97-2515-S-002-011- |
呂學士 | 487,000 | 2008-08-01 ~ 2009-12-31 |
| 無線感測器網路技術前瞻研究—計畫辦公室設置計畫(3/3)
97-2218-E-002-007- |
呂學士 | 7,892,000 | 2008-11-01 ~ 2009-10-31 |
| 無線感測器網路技術前瞻研究—計畫辦公室設置計畫(2/3)
96-2218-E-002-016- |
呂學士 | 8,795,000 | 2007-11-01 ~ 2009-01-31 |
| 應用於新穎發光元件、嵌入有機或無機主動材料之微共振腔(Microcavities embedded with organic or inorganic active materials for novel light-emitting devices)
NSC 97-2221-E-002-235 |
毛明華 | 1,070,000 | 2008-08-00 ~ 2009-07-00 |
| 半導體雷射之高頻特性量測 | 毛明華 | 200,000 | 2003-11-00 ~ 2003-12-00 |
| 窄頻紅外線光源與偵測器及其在植物與神經細胞上的應用(1/3)(The narrow bandwidth infrared emitter and detector with applications in plants and neuron cells)
NSC 97-2120-M-002-016- |
李嗣涔 | 14,000,000 | 2008-08-01 ~ 2009-07-31 |
| 用於電子紙顯示器之軟性能量回收主動式矩陣電路(Flexible Energy-Recycling Active Matrix Circuits for Electronic Paper Display)
NSC 97-2221-E-002-227-MY3 |
李嗣涔 | 2,840,000 | 2008-08-01 ~ 2009-07-31 |
| 家用型雙波段乳癌紅外線診斷系統(3/3)(A Novel Household Dual-Spectrum IR Imaging System for Breast Cancer Detection)
NSC 97-2218-E-002-003- |
李嗣涔 | 6,337,000 | 2008-11-01 ~ 2009-10-31 |
| 能源國家型科技計畫<先期規劃計畫>(National Energy Program--Planning Project)
NSC 97-3011-P-002-001- |
李嗣涔 | 7,100,000 | 2008-08-01 ~ 2009-04-30 |
| 砷化鎵基三五材料於矽圖案基板上之異質磊晶技術研究(Heteroepitaxy of GaAs-based III-V semiconductors on patterened Si substrates)
97E3131 |
林浩雄 | 1,000,000 | 2008-03-00 ~ 2009-03-00 |
| 新型GaAs-based多接面太陽電池的可行性研究(Feasibility study on novel GaAs-based multijunction solar cells)
NSC-98-NU-E-002-002 |
林浩雄 | 749,000 | 2009-01-01 ~ 2009-12-31 |
| 以伽瑪射線照射法製造光波導元件(Fabrication of Optical Waveguide Devices by Gamma-Ray Irradiation)
NSC 97-2221-E-002 -041 -MY3 |
王維新 | 3,741,000 | 2008-08-01 ~ 2011-07-31 |