主要研究領域
研究領域摘要
Journal articles & book chapters
1. Yun-Chorng Chang, Yun-Li Li, Tzung-Han Lin, and Jinn-Kong Sheu,, “Variations of channel conductance in AlGaN/GaN structure with sub-bandgap laser light and above-bandgap illuminations” , Jpn. J. Appl. Phys. Lett. , Vol. 46 , 3382-, 2007
2. Y. C. Chang, Y.-L. Li, D. B. Thomson, and R. F. Davis, “Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates” , Appl. Phys. Lett. , Vol. 91 , 51119-, 2007
3. Y.-L. Li, Y.-R. Huang, and Y.-H Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness” , Appl. Phys. Lett. , Vol. 91 , 181113-, 2007
4. S. Chhajed, Y. Xi, Y.-L. Li, Th. Gessmann, and E. F. Schubert,, “Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes” , J. Appl. Phys. , Vol. 97 , 54506-, 2005
5. J. K. Kim, E. L. Waldron, Y.-L Li., Th. Gessmann, H. W. Jang, J. -L. Lee, E. F. Schubert, “P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20 %” , Appl. Phys. Lett. , Vol. 84 , 4508-, 2004
Conference & proceeding papers:
1. Yun-Li Li, Yi-Ru Huang, “InGaN-based LED with low efficiency droop at high current density” , 7th International Conference of Nitride Semiconductors , Las Vegas, USA , Sep. 2007
2. Yun-Li Li, Yi-Ru Huang, Yun-Chorng Chang,, “Carrier dynamics of InGaN/GaN light-emitting diodes with various doping profiles” , 7th International Conference of Nitride Semiconductors , Las Vegas, USA , Sep. 2007
3. C.-L. Wu, M.-H. Lo, and Y.-L. Li, “Wet etching of patterned sapphire substrates” , 1st White LEDs and Solid State Lighting conference , Tokyo, Japan , Nov. 2007
4. Y.-R. Huang, Y.-H. Lai, and Y.-L. Li, “InGaN/GaN light-emitting diodes with various doping profiles” , 1st White LEDs and Solid State Lighting conference , Tokyo, Japan , Nov. 2007
5. Y. -L. Li, and Y. C. Chang, “Performance of InGaN/GaN light-emitting diodes with different active region structures” , MRS 2006 fall meeting , Boston, MA USA , Nov. 2006