The major research topics are on the Si Metal-Oxide- Semiconductor (MOS) devices, especially on the study of ultra-thin gate oxides.
Using the compensation of anions through ultra-thin oxides via the field stress in D.I. water, the oxide will become more uniform and less leaky. By suitably controlling anodization time and field, one can obtain cost effective high-k Al2O3 by the oxidation of thin Al film. Using the saturation characteristic of I-V curve of MOS(p) devices, one can detect the temperature and stress distribution within the wafer. By adding suitable susceptors and cover quartz on wafer, one can control the temperature and flow distribution in RTP, and therefore the uniformity of oxide thickness. Using anodization in H2SiF6 solution, one can prepare room temperature MOS solar cells with efficiency close to 10 %. Analysis of the lateral non-uniformity in MOS structure by examining the deep depletion behavior in C-V curves. High sensitive photo sensors by using the enhanced fringing field effect of MOS structure at edge. Determination of the thickness of ultra-thin oxide and examining the non-uniformity property in it by analyzing the derivative of the I-V curve of MOS structure. Transistor and memory devices by utilizing the coupling effect in concentric MIS tunneling diodes.
Experiments are essential in the study of devices. From measurements and analyses, devices’ characteristics are explained and novel devices are proposed.