李峻霣副教授的著作列表 - Publication List of Jiun-Yun Li

Publication List of 李峻霣 Jiun-Yun Li

Journal articles & book chapters:

  1. W. Hardy, C. Harris, Yi-Hsin Su, Yen Chuang, J. Moussa, L. Maurer, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Single and double hole quantum dots in strained Ge/SiGe quantum wells,” Nanotechnology, vol. 30, no. 21, 215202, 2019
  2. Ching-Wei Tung, Yen Chuang, Hsiao-Chien Chen, Ting-Shan Chan, Jiun-Yun Li, and Hao-Ming Chen, “Tunable electrodeposition of Ni electrocatalysts onto Si microwires array for photoelectrochemical water oxidation,” Particle and Particle Systems Characterization, vol. 35, no. 1, 1700321, 2018
  3. Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure,” Applied Physics Letters, vol. 112, no. 8, 083502, 2018
  4. Tzu-Hung Liu, Yen Chuang, Po-Yuan Chiu, Chia-You Liu, Cheng-Hong Shen, Guang-Li Lou, and Jiun-Yun Li, “High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing,” IEEE Electron Device Letters, vol. 39, no. 4, 468~471, 2018
  5. E. Bussmann, J. K. Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, Jiun-Yun Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T. M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials, vol. 1, no. 6, 066004, 2018
  6. Chung-Tao Chou, N. T. Jacobson, J. E. Moussa, A. D. Baczewski, Yen Chuang, Chia-You Liu, Jiun-Yun Li, and T. M. Lu, “Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime,” Nanoscale, vol. 10, no. 44,, 20559~20564, 2018
  7. T. M. Lu, L. A. Tracy, D. Laroche, S. –H. Huang, Y. Chuang, Y. –H Su, Jiun-Yun Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports, vol. 7, 2468, 2017
  8. T. M. Lu, C. T. Harris, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Applied Physics Letters, vol. 111, no. 10, 102108, 2017
  9. Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” Physical Review Materials, vol. 1, no. 4, 044601, 2017
  10. Pao-Chuan Shih, Wei-Chih Hou, and Jiun-Yun Li, “A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current,” IEEE Electron Device Letters, vol. 38, no. 12, 1751~1754, 2017
  11. T. M. Lu, D. Laroche, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports, 6, 20967, 2016
  12. Dingkai Guo, Jiun-Yun Li, Liwei Cheng, Xing Chen, Terry Worchesky, and Fow-Sen Choa, “Widely tunable integrated mid-infrared quantum cascade lasers using super-structure grating reflectors,” Photonics, vol. 3, no. 2, 25, 2016
  13. D. Laroche, S. –H. Huang, Y. Chuang, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Applied Physics Letters, vol. 108, no. 23, 233504, 2016
  14. D. Laroche, S. –H. Huang, E. Nielsen, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, 106, 143503, Apr. 2015
  15. D. Laroche, S. –H. Huang, E. Nielsen, Y. Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Scattering mechanism in shallow undoped Si/SiGe quantum wells,” AIP Advances, 5, 107106, 2015
  16. C. T. Huang, Jiun-Yun Li, K. S. Chou, and J. C. Sturm, “Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer,” Applied Physics Letters, vol. 104, no. 24, 243510, 2014
  17. Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely high electron mobility in isotopically enriched 28Si quantum wells grown by chemical vapor deposition,” Applied Physics Letters, 103, 162105, Oct. 2013
  18. Jiun-Yun Li and J. C. Sturm, “The effects of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases,” IEEE Transactions on Electron Devices, vol. 60, no. 8, pp. 2479 - 2484, Jul. 2013
  19. C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin SiGe cap layers,” ECS Transactions, vol. 53, 45-50, May 2013
  20. C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Implant isolation of silicon two-dimensional electron gases at 4.2 K,” IEEE Electron Device Letters, vol. 34, pp. 21 - 23, Jan. 2013
  21. Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely low electron density in a modulation-doped Si/SiGe 2DEG by effective Schottky gating,” ECS Transactions, vol. 50, pp. 145 - 149, 2013
  22. Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “The effect of hydrogen on the surface segregation of phosphorus in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD,” Applied Physics Letters, vol. 101, p. 142112, Oct. 2012
  23. W. H. Hsu, K. C. Lin, Jiun-Yun Li, Y. S. Wu, and W. S. Wang, “Polarization splitter with variable TE-TM mode converter using Zn and Ni codiffused LiNbO3 Waveguides,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 11, no. 1, pp. 271 - 277, 2005
  24. M. J. Chen, J. L. Yen, Jiun-Yun Li, J. F. Chang, S. C. Tsai, and C. S. Tsai, “Stimulated emission in a nano-structured silicon pn junction diode using current injection,” Applied Physics Letters, vol. 84, no. 12, pp. 2163 -2165, 2004
  25. C. S. Tsai, Jiun-Yun Li, M. J. Chen, C. C. Yu, Y. Liou, D.S. Hung, Y. D. Yao, and S. F. Lee, “Microwave FMR studies on ultrathin Fe/GaAs layer structures,” Journal of Magnetism and Magnetic Materials, vol. 282, pp. 57 - 60, 2004

Conference & proceeding papers:

  1. Tzu-Ming Lu, Xiaoyan Shi, Wei Pan, Shi-Hsien Huang, CheeWee Liu, and Jiun-Yun Li, “Enhancement of spin susceptibility of low-density two-dimensional electrons in a high quality Si/SiGe quantum well,” 2015 APS March Meeting, Session G5, San Antonio, TX, Mar. 2015
  2. D. Guo, X. Chen, Jiun-Yun Li, L. Cheng, T. Worchesky, and F. S. Choa, “Integrated widely tunable quantum cascade lasers with super-structure gratings,” Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XIII, San Francisco, CA, USA, Feb. 2014
  3. C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin SiGe cap layers,” 223rd Meeting of the Electrochemical Society, Toronto, ON, Canada, May 2013
  4. X. Chen, L. Cheng, D. Guo, F. S. Choa, Jiun-Yun Li, J. Bruno, J. Bradshaw, K. Lascola, R. Leavitt, J. Pham, and F. Towner, “Surface emitting quantum cascade laser arrays,” Frontiers in Optics (FiO) 2012/Laser Science (LS) XXVII Conference, Rochester, NY, USA, Oct. 2012
  5. Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely low electron density in a modulation-doped Si/SiGe 2DEG by effective Schottky gating,” 222nd Meeting of the Electrochemical Society, Honolulu, HI, USA, Oct. 2012
  6. Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD,” International SiGe Technology and Device Meeting, Berkeley, CA, USA, Jun. 2012
  7. C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation,” International SiGe Technology and Device Meeting, Berkeley, CA, USA, Jun. 2012
  8. X. Chen, L. Cheng, D. Guo, Jiun-Yun Li, and F. S. Choa, “Heat dissipation consideration of high-power mid-infrared quantum cascade laser Arrays,” Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, USA, May 2012
  9. Jiun-Yun Li, C. T. Huang, L. Rokhinson, J. A. Ohlhausen, M. Malcolm, and J. C. Sturm, “High quality two-dimensional electron gases (2DEGs) in isotopically-enriched strained Si,” 2012 APS March Meeting Session X29, Boston, MA, USA, Feb. 2012
  10. Jiun-Yun Li, K. S. Chou, C. T. Huang, J. C. Sturm, and L. P. Rokhinson, “High quality two-dimensional electron gases (2DEGs) in modulation-doped and enhancement-mode Si/SiGe heterostructures,” 2011 PCCM Symposium: Quantum Control of Solid State Systems, Princeton, NJ, USA, Nov. 2011
  11. Jiun-Yun Li, C. T. Huang, J. C. Sturm, and L. P. Rokhinson, “High quality two-dimensional electron system (2DES) in n-type Si/SiGe modulation-doped heterostructures grown by RTCVD,” 2011 International Workshop on Silicon Quantum Electronics, Denver, CO, USA, Aug. 2011
  12. K. Chou, Jiun-Yun Li, C. T. Huang, J. C. Sturm, and C. W. Liu, “Stable high quality accumulation-mode Si 2DEG with a shallow top SiGe barrier of ~ 25 nm,” 2011 International Workshop on Silicon Quantum Electronics, Denver, CO, USA, Aug. 2011
  13. Jiun-Yun Li, J. C. Sturm, I. Lauer, and S. Koester, “Effect of interface defects and record high peak tunnel current density in Si-based tunnel diodes grown by RTCVD,” 2011 MRS Spring Meeting, Symposium P7.11, San Francisco, CA, USA, Apr. 2011
  14. X. Chen, L. Cheng, D. Guo, F. S. Choa, T. Worchesky, and Jiun-Yun Li, “Quasi-continuous-wave operations of quantum cascade lasers,” Photonics North 2010, Proceedings of SPIE, Niagra Falls, NY, USA, Jun. 2010
  15. X. Chen, L. Cheng, D. Guo, F. S. Choa, T. Worchesky, and Jiun-Yun Li, “Low-threshold current short-cavity quantum cascade lasers,” Photonics North 2010, Proceedings of SPIE, Niagra Falls, NY, USA, Jun. 2010
  16. Jiun-Yun Li, J. C. Sturm, A. Majumdar, I. Lauer, and S. Koester, “Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD,” 67th Annual Device Research Conference, University Park, PA, USA, Jun. 2009
  17. Jiun-Yun Li, F. S. Choa, X. Ji, and L. Cheng, “High growth temperature studies of InGaAs/InAlAs superlattices for high-quality QCL and QWIP applications,” 9th International Conference on Intersubband Transitions in Quantum Wells, Ambleside, Cumbria, U. K., Sept. 2007
  18. C. S. Tsai, B. S. Chiu, M. J. Chen, C. C. Yu, Y. Liou, Jiun-Yun Li, and J. Yoo, “Wideband tunable high-absorption bandstop filtering using FMR in Fe GaAs layer structures,” 9th Joint MMM-Intermag Conference, Anaheim, CA, USA, Jan. 2004
  19. C. S. Tsai, Jiun-Yun Li, M. J. Chen, B. S. Chiu, C. C. Yu, Y. Liou, D. S. Hung, Y. D. Yao, C. L. Chen, “Microwave FMR studies on ultrathin Fe/GaAs layer structures,” International Symposium on Advanced Magnetic Technologies, 台北,台灣, Nov. 2003
  20. Jiun-Yun Li, W. H. Hsu, and W. S. Wang, “A TE-TM mode splitter using annealed proton exchange and Zinc/Nickel co-diffusion waveguides,” Lasers and Electro-Optics, 2001 CLEO/Pacific Rim 2001, the 4th Pacific Rim Conference, Makuhari Messe Chiba, Japan, Jul. 2001
  21. C. L. Lin, Jiun-Yun Li, and W. S. Wang, “Research of high efficiency erbium-doped lithium niobate optical waveguide,” 1999 台灣光電科技研討會, 桃園,台灣, Dec. 1999

Books:

  1. 錢宣浩、王晉中、葉彥宏、李峻霣, “控制系統原理與設計,” 美商國際麥格羅—希爾, 台灣, 2004, ISBN:9574939049
  2. 李峻霣, “近代物理精要,” 美商國際麥格羅—希爾, 台灣, 2003, ISBN:9574937755
  3. 李峻霣, “類比CMOS積體電路設計,” 美商國際麥格羅—希爾, 台灣, 2002, ISBN:9574935922