李峻霣副教授的著作列表 - Publication List of Jiun-Yun Li

Publication List of 李峻霣 Jiun-Yun Li

Journal articles & book chapters:

  1. Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li, “Strain effects on Rashba spin-orbit coupling of two-dimensional hole gases in GeSn/Ge heterostructures,” Advanced Materials, in press, May 2021
  2. Yen Chuang, Chia-You Liu, Hsiang-Shun Kao, Kai-Ying Tien, G. L. Luo, and Jiun-Yun Li, “Schottky barrier height modulation of metal/n-GeSn contacts featuring low contact resistivity by in-situ chemical vapor deposition doping and NiGeSn alloy formation,” ACS Applied Electronic Materials, vol. 3, no. 3, 1334~1340, Mar. 2021
  3. Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “Electron mobility enhancement in GeSn n-Channel MOSFETs by tensile strain,” IEEE Electron Device Letters, vol. 42, no. 1, 10~13, Jan. 2021
  4. Po-Yuan Chiu, D. Lidsky, Yen Chuang, Yi-Hsin Su, Jiun-Yun Li, C. T. Harris, and T. M. Lu, “Post-growth modulation doping by ion implantation,” Applied Physics Letters, vol. 117, no. 26, 263502, Dec. 2020
  5. X. Liu, T. M. Lu, C. T. Harris, F. L. Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu, and R. R. Du, “Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge-SiGe heterostructure,” Physical Review B, vol. 101, no. 7, 075304, Feb. 2020
  6. C. W. Tung, T. R. Kuo, C. S. Hsu, Yen Chuang, H. C. Chen, C. K. Chang, C. Y. Chien, Y. J. Lu, T. S. Chan, J. F. Lee, Jiun-Yun Li, and H. M. Chen, “Light-induced activation of adaptive junction for efficient solar-driven oxygen evolution: in-situ unraveling the interfacial metal-silicon junction,” Advanced Energy Materials, vol. 9, no. 31, 1901308, Jul. 2019
  7. Yi-Hsin Su, Kuan-Yu Chou, Yen Chuang, T. M. Lu, and Jiun-Yun Li, “Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening,” Journal of Applied Physics, vol. 125, no. 23, 235705, Jun. 2019
  8. W. Hardy, C. Harris, Yi-Hsin Su, Yen Chuang, J. Moussa, L. Maurer, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Single and double hole quantum dots in strained Ge/SiGe quantum wells,” Nanotechnology, vol. 30, no. 21, 215202, Mar. 2019
  9. Chung-Tao Chou, N. T. Jacobson, J. E. Moussa, A. D. Baczewski, Yen Chuang, Chia-You Liu, Jiun-Yun Li, and T. M. Lu, “Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime,” Nanoscale, vol. 10, no. 44,, 20559~20564, Nov. 2018
  10. E. Bussmann, J. K. Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, Jiun-Yun Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T. M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials, vol. 1, no. 6, 066004, Jun. 2018
  11. Tzu-Hung Liu, Yen Chuang, Po-Yuan Chiu, Chia-You Liu, Cheng-Hong Shen, Guang-Li Lou, and Jiun-Yun Li, “High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing,” IEEE Electron Device Letters, vol. 39, no. 4, 468~471, Apr. 2018
  12. Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure,” Applied Physics Letters, vol. 112, no. 8, 083502, Feb. 2018
  13. Ching-Wei Tung, Yen Chuang, Hsiao-Chien Chen, Ting-Shan Chan, Jiun-Yun Li, and Hao-Ming Chen, “Tunable electrodeposition of Ni electrocatalysts onto Si microwires array for photoelectrochemical water oxidation,” Particle and Particle Systems Characterization, vol. 35, no. 1, 1700321, Jan. 2018
  14. Pao-Chuan Shih, Wei-Chih Hou, and Jiun-Yun Li, “A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current,” IEEE Electron Device Letters, vol. 38, no. 12, 1751~1754, Dec. 2017
  15. T. M. Lu, C. T. Harris, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Applied Physics Letters, vol. 111, no. 10, 102108, Sept. 2017
  16. Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” Physical Review Materials, vol. 1, no. 4, 044601, Sept. 2017
  17. T. M. Lu, L. A. Tracy, D. Laroche, S. –H. Huang, Y. Chuang, Y. –H Su, Jiun-Yun Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports, vol. 7, 2468, May 2017
  18. D. Laroche, S. –H. Huang, Y. Chuang, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Applied Physics Letters, vol. 108, no. 23, 233504, Jun. 2016
  19. Dingkai Guo, Jiun-Yun Li, Liwei Cheng, Xing Chen, Terry Worchesky, and Fow-Sen Choa, “Widely tunable integrated mid-infrared quantum cascade lasers using super-structure grating reflectors,” Photonics, vol. 3, no. 2, 25, May 2016
  20. T. M. Lu, D. Laroche, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports, 6, 20967, Feb. 2016
  21. D. Laroche, S. –H. Huang, E. Nielsen, Y. Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Scattering mechanism in shallow undoped Si/SiGe quantum wells,” AIP Advances, 5, 107106, Oct. 2015
  22. D. Laroche, S. –H. Huang, E. Nielsen, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, 106, 143503, Apr. 2015
  23. C. T. Huang, Jiun-Yun Li, K. S. Chou, and J. C. Sturm, “Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer,” Applied Physics Letters, vol. 104, no. 24, 243510, Jun. 2014
  24. Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely high electron mobility in isotopically enriched 28Si quantum wells grown by chemical vapor deposition,” Applied Physics Letters, 103, 162105, Oct. 2013
  25. Jiun-Yun Li and J. C. Sturm, “The effects of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases,” IEEE Transactions on Electron Devices, vol. 60, no. 8, pp. 2479 - 2484, Jul. 2013
  26. C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Implant isolation of silicon two-dimensional electron gases at 4.2 K,” IEEE Electron Device Letters, vol. 34, pp. 21 - 23, Jan. 2013
  27. Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “The effect of hydrogen on the surface segregation of phosphorus in epitaxially-grown relaxed SiGe by RTCVD,” Applied Physics Letters, vol. 101, p. 142112, Oct. 2012

Books:

  1. 錢宣浩、王晉中、葉彥宏、李峻霣, “控制系統原理與設計,” 美商國際麥格羅—希爾, 台灣, 2004, ISBN:9574939049
  2. 李峻霣, “近代物理精要,” 美商國際麥格羅—希爾, 台灣, 2003, ISBN:9574937755
  3. 李峻霣, “類比CMOS積體電路設計,” 美商國際麥格羅—希爾, 台灣, 2002, ISBN:9574935922