X. Wang, Y. C. Lin, Chia-Tse Tai, S. W. Lee, T. M. Lu, S. H. R. Shin, S. Addamane, C. Sheehan, Jiun-Yun Li, Y. Kim, and J. Yoo, “Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure,” APL Materials, vol. 10, no. 11, 111108, Nov. 2022
Chia-You Liu, Kai-Ying Tian, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li, “Room-temperature negative differential resistance and high tunneling current density in GeSn Esaki diodes,” Advanced Materials, vol. 34, no. 41, 2203888, Oct. 2022
A. J. Miller, M. Brickson, W. J. Hardy, Chia-You Liu, Jiun-Yun Li, A. Baczewski, M. P. Lilly, T. M. Lu, and D. R. Luhman, “Effective out-of-plane g-factor in strain-Ge/SiGe quantum dots,” Physical Review B, vol. 106, no. 12, L121402, Sept. 2022
S. W. Chang, et al., “First demonstration of heterogeneous IGZO/Si CFET monolithic 3D integration with dual workfunction gate for ultra low-power SRAM and RF applications,” IEEE Transactions on Electron Devices, Apr. 2022
Nai-Wen Hsu, Wei-Chih Hou, Yu-Jui Wu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Temperature dependence of charge distributions and carrier mobility in an undoped Si/SiGe heterostructure,” IEEE Transactions on Electron Devices, vol. 69, no. 2, 482-486, Feb. 2022
Yao-Chun Chang, I. Huang, C. Y. Chen, Min-Jui Lin, S. Y. Chen, and Jiun-Yun Li, “Electron-spin-resonance meanderlines for effective spin control in silicon quantum dots for large-scale qubit applications,” Applied Physics Letters, vol. 119, no. 24, 243503, Dec. 2021
D. Chen, S. Cai, Nai-Wen Hsu, S. H. Huang, Yen Chuang, E. Nielsen, Jiun-Yun Li, C. W. Liu, T. M. Lu, and D. Laroche, “Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, vol. 119, no. 22, 223103, Nov. 2021
Wei-Chih Hou, Pao-Chuan Shih, H. H. Lin, B. Wu, and Jiun-Yun Li, “High band-to-band tunneling current in InAs/GaSb heterojunction Esaki diodes by the enhancement of electric fields close to the mesa sidewalls,” IEEE Transactions on Electron Devices, vol. 68, no. 8, 3748-3754, Aug. 2021
Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li, “Strain effects on Rashba spin-orbit coupling of two-dimensional hole gases in GeSn/Ge heterostructures,” Advanced Materials, in press, May 2021
Yen Chuang, Chia-You Liu, Hsiang-Shun Kao, Kai-Ying Tien, G. L. Luo, and Jiun-Yun Li, “Schottky barrier height modulation of metal/n-GeSn contacts featuring low contact resistivity by in-situ chemical vapor deposition doping and NiGeSn alloy formation,” ACS Applied Electronic Materials, vol. 3, no. 3, 1334-1340, Mar. 2021
Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “Electron mobility enhancement in GeSn n-Channel MOSFETs by tensile strain,” IEEE Electron Device Letters, vol. 42, no. 1, 10-13, Jan. 2021
Po-Yuan Chiu, D. Lidsky, Yen Chuang, Yi-Hsin Su, Jiun-Yun Li, C. T. Harris, and T. M. Lu, “Post-growth modulation doping by ion implantation,” Applied Physics Letters, vol. 117, no. 26, 263502, Dec. 2020
X. Liu, T. M. Lu, C. T. Harris, F. L. Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu, and R. R. Du, “Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge-SiGe heterostructure,” Physical Review B, vol. 101, no. 7, 075304, Feb. 2020
C. W. Tung, T. R. Kuo, C. S. Hsu, Yen Chuang, H. C. Chen, C. K. Chang, C. Y. Chien, Y. J. Lu, T. S. Chan, J. F. Lee, Jiun-Yun Li, and H. M. Chen, “Light-induced activation of adaptive junction for efficient solar-driven oxygen evolution: in-situ unraveling the interfacial metal-silicon junction,” Advanced Energy Materials, vol. 9, no. 31, 1901308, Jul. 2019
Yi-Hsin Su, Kuan-Yu Chou, Yen Chuang, T. M. Lu, and Jiun-Yun Li, “Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening,” Journal of Applied Physics, vol. 125, no. 23, 235705, Jun. 2019
W. Hardy, C. Harris, Yi-Hsin Su, Yen Chuang, J. Moussa, L. Maurer, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Single and double hole quantum dots in strained Ge/SiGe quantum wells,” Nanotechnology, vol. 30, no. 21, 215202, Mar. 2019
Chung-Tao Chou, N. T. Jacobson, J. E. Moussa, A. D. Baczewski, Yen Chuang, Chia-You Liu, Jiun-Yun Li, and T. M. Lu, “Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime,” Nanoscale, vol. 10, no. 44,, 20559-20564, Nov. 2018
E. Bussmann, J. K. Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, Jiun-Yun Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T. M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials, vol. 1, no. 6, 066004, Jun. 2018
Tzu-Hung Liu, Yen Chuang, Po-Yuan Chiu, Chia-You Liu, Cheng-Hong Shen, Guang-Li Lou, and Jiun-Yun Li, “High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing,” IEEE Electron Device Letters, vol. 39, no. 4, 468-471, Apr. 2018
Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure,” Applied Physics Letters, vol. 112, no. 8, 083502, Feb. 2018
Ching-Wei Tung, Yen Chuang, Hsiao-Chien Chen, Ting-Shan Chan, Jiun-Yun Li, and Hao-Ming Chen, “Tunable electrodeposition of Ni electrocatalysts onto Si microwires array for photoelectrochemical water oxidation,” Particle and Particle Systems Characterization, vol. 35, no. 1, 1700321, Jan. 2018
Pao-Chuan Shih, Wei-Chih Hou, and Jiun-Yun Li, “A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current,” IEEE Electron Device Letters, vol. 38, no. 12, 1751-1754, Dec. 2017
T. M. Lu, C. T. Harris, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Applied Physics Letters, vol. 111, no. 10, 102108, Sept. 2017
Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” Physical Review Materials, vol. 1, no. 4, 044601, Sept. 2017
T. M. Lu, L. A. Tracy, D. Laroche, S. –H. Huang, Y. Chuang, Y. –H Su, Jiun-Yun Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports, vol. 7, 2468, May 2017
D. Laroche, S. –H. Huang, Y. Chuang, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Applied Physics Letters, vol. 108, no. 23, 233504, Jun. 2016
Dingkai Guo, Jiun-Yun Li, Liwei Cheng, Xing Chen, Terry Worchesky, and Fow-Sen Choa, “Widely tunable integrated mid-infrared quantum cascade lasers using super-structure grating reflectors,” Photonics, vol. 3, no. 2, 25, May 2016
T. M. Lu, D. Laroche, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports, 6, 20967, Feb. 2016
D. Laroche, S. –H. Huang, E. Nielsen, Y. Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Scattering mechanism in shallow undoped Si/SiGe quantum wells,” AIP Advances, 5, 107106, Oct. 2015
D. Laroche, S. –H. Huang, E. Nielsen, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, 106, 143503, Apr. 2015
C. T. Huang, Jiun-Yun Li, K. S. Chou, and J. C. Sturm, “Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer,” Applied Physics Letters, vol. 104, no. 24, 243510, Jun. 2014
Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely high electron mobility in isotopically enriched 28Si quantum wells grown by chemical vapor deposition,” Applied Physics Letters, 103, 162105, Oct. 2013
Jiun-Yun Li and J. C. Sturm, “The effects of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases,” IEEE Transactions on Electron Devices, vol. 60, no. 8, pp. 2479 - 2484, Jul. 2013
C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Implant isolation of silicon two-dimensional electron gases at 4.2 K,” IEEE Electron Device Letters, vol. 34, pp. 21 - 23, Jan. 2013
Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “The effect of hydrogen on the surface segregation of phosphorus in epitaxially-grown relaxed SiGe by RTCVD,” Applied Physics Letters, vol. 101, p. 142112, Oct. 2012