- H. P. Hsu, J. D. Wu, Y. J. Lin, Y. S. Huang, Y. R. Lin, and H. H. Lin, “
**Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques**,”*Jpn J. Appl. Physics*, 54, 091201, 2015 - Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “
**InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm**,”*Optics lett.*, 40, 1904~1907, 2015 - H. P. Hsu, P. H. Wu, J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. H. Lin, and K. K. Tiong, “
**Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy**,”*Jpn J. Appl. Physics*, 53, 051201, 2014 - H. M. Wu, S. J. Tsai, Y. C. Chang, Y. R. Chen, and H. H. Lin, “
**Ordering InGaP epilayer grown on Ge substrate**,”*Thin Solid Films*, 570, 390~393, 2014 - Y. C. Lin, M. H. Mao, Y. R. Lin, H. H. Lin, C. A. Lin, and L. A. Wang, “
**All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling**,”*Optics lett.*, 39, 4998~5001, 2014 - K. I. Lin, K. L. Lin, B. W. Wang, H. H. Lin, and J. S. Huang, “
**Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation**,”*Appl. Phys. Express*, vol. 6, p. 121202, Dec. 2013 - J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. S. Tsai, and H. H. Lin, “
**Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure**,”*J. Luminescence*, vol. 136, pp. 178-181, Apr. 2013 - Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “
**Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy**,”*J. Physics D*, vol. 46, p. 035306, Jan. 2013 - D. N. Talwar, T. R. Yang, H. H. Lin, and Z. C. Feng, “
**Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)**,”*Appl. Phys. Lett.*, vol. 102, p. 052110, Jan. 2013 - H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “
**Short range structure of dilute nitride GaAsSbN**,”*in: Physics and Mechanics of New Materials and Their Applications, edited by I. A. Parinov and S. H. Chang*, Ch. 10, pp. 107-123, 2013 - Y. C. Chin, J. Y. Chen, B. H. Chen, H. S. Tsai, Y. S. Huang, and H. H. Lin, “
**Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs**,”*Appl. Phys. Lett.*, vol. 101, issue 25, p. 251910, Dec. 2012 - S. T. Lo, H. E. Lin, S.-W. Wang, H. D. Lin, Y. C. Chin, H. H. Lin, J. C. Lin, and C. T. Liang, “
**Electron transport in a GaPSb film**,”*Nanoscale Res. Lett.*, vol. 7, p. 640, Nov. 2012 - J.-W. Yu, P.-C. Yeh, S.-L. Wang, W.-R. Wu, M.-H. Mao, H. H. Lin, and L.-H. Peng, “
**Short channel effects on gallium nitride/gallium oxide nanowire transistors**,”*Appl. Phys. Lett.*, vol. 101, issue 18, p. 183501, Oct. 2012 - C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “
**Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs**,”*Appl. Phys. Lett.*, vol. 101, issue 9, p. 091902, Aug. 2012 - Y. C. Chin, H. H. Lin, and C. H. Huang, “
**InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction**,”*IEEE Electron Device Lett.*, vol. 33, issue 3, pp. 489-491, Mar. 2012 - H. P. Hsu, Y. T. Lin, and H. H. Lin, “
**Evidence of nitrogen reorganization in GaAsSbN alloys**,”*Jpn. J. Appl. Phys.*, vol. 51, p. 022605, Jan. 2012 - Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “
**Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy**,”*Thin solid film*, vol. 520, issue 13, pp. 4486-4492, 2012 - J. M. Lin, L. C. Chou, and H. H. Lin, “
**Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells**,”*J. Vac. Sci. and Technol. B*, vol. 29, issue 2, p. 021011, 2011 - F. Cheng, T. Fa, S. Yao, C. J. Wu, H. H. Lin, and Z. C. Feng, “
**Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction**,”*J. Phys. D*, vol. 406, pp. 3219-3221, 2011 - Y. W. Tai, C. C. Yang, M. H. Yang, C. S. Hong, H. H. Lin, and B. Z. Wan, “
**Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures**,”*J. Taiwan Inst. of Chem. Eng*, vol. 42, pp. 669-673, 2011 - T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy**,”*J. Crystal Growth*, vol. 318, issue 1, pp. 558-562, 2011 - K. J. Cheetham, A. Krier, I. Patel, J. S. Tzeng, and H. H. Lin, “
**Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE**,”*J. Phys. D*, vol. 44, issue 8, p. 085404, 2011 - H. P. Hsu, Y. S. Huang, Y. T. Lin, H. H. Lin, and K. K. Tiong, “
**Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy**,”*Mater. Chem. Phys.*, vol. 124, issue 1, pp. 558 -562, Nov. 2010 - Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “
**InGaPSb/GaAs: its band offsets and application to heterojunction bipolar transistors**,”*Electron Device Lett.*, vol. 31, issue 5, pp. 434 - 436, May 2010 - Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “
**Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN**,”*Appl. Phys. Lett.*, vol. 96, no. 01, 011903, Jan. 2010 - S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN**,”*International J. of Electrical Eng.*, vol. 16, no. 4, pp. 319-326, Aug. 2009 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures**,”*Appl. Phys. Lett.*, vol. 94, no. 21, 211906, Jun. 2009 - P. Sitarek, H. P. Hsu, Y. S. Huang, J. M. Lin, H. H. Lin, and K. K. Tiong, “
**Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures**,”*J. Appl. Phys.*, vol. 105, no. 12, 123523, Jun. 2009 - Y. R. Lin, H. H. Lin, and J. H. Chu, “
**GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer**,”*Electronics lett.*, vol. 45, issue 13, pp. 682-683, Jun. 2009 - H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “
**Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,**,”*Phys. Stat. Sol. A*, vol. 206, no. 5, pp. 830-835, May 2009 - Y. R. Lin, Y. F. Lai, C. P. Liu, and H. H. Lin, “
**GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer**,”*Appl. Phys. Lett.*, vol. 94, no. 11, 111106, Mar. 2009 - Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “
**Energy gap reduction in GaAsSbN**,”*Appl. Phys. Lett.*, vol 93, no. 17, 171914, Oct. 2008 - Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “
**Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics**,”*Appl. Phys. Lett.*, vol. 93, no. 12, 121903, Sept. 2008 - S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai, “
**Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance**,”*Thin Solid Films*, vol. 516, issue 22, pp. 8049-8058, Sept. 2008 - T. C. Lin, T. C. Ma and H. H. Lin, “
**Design and fabrication of AlGaAs ambient light detectors**,”*IEEE Photonic Tech. Lett.*, Vol. 20, No. 16, 1429-1431, Aug. 2008 - G. Tsai, D. L. Wang, and H. H. Lin, “
**Photoluminescence of InAs0.04P0.67Sb0.29**,”*J. Appl. Phys.*, Vol. 104, 023535, Jul. 2008 - K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, J. Y. Wu, and S. D. Lin, “
**Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems**,”*J. Physics: Condensed Matter*, Vol. 20, No. 9, 295223, Jul. 2008 - H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “
**Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy**,”*J. Appl. Phys.*, Vol. 103, 113508, Jun. 2008 - J. R. Lee, C. R. Lu, H. L. Liu, H. H. Lin, and L. W. Sung, “
**Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures**,”*Phys. Stat. Sol. (c)*, Vol. 5, No. 9, 3054-3056, May 2008 - T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy**,”*J. of Crystal Growth*, Vol. 310, 2854-2858, May 2008 - C. Y. Chen, J. R. Lee, C. R. Lu, L. W. Sun, and H. H. Lin, “
**Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers**,”*J. Phys. and Chem. Solids*, Vol. 69, 493-496, Feb. 2008 - T. S. Wang, J. T. Tsai, K. I. Lin, J. S. Hwang, H. H. Lin, and L. C. Chou, “
**Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells**,”*Materials Science and Engineering B*, 147, 131-135, Feb. 2008 - C. H. Chan, C. H. Lee, Y. S. Huang, J. S. Wang, and H. H. Lin, “
**Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy**,”*J. Appl. Phys.*, Vol. 101, 103102, May 2007 - Y. C. Wen, L. C. Chou, H. H. Lin, V. Gusev, K. H. Lin, and C. K. Sun, “
**Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects**,”*Appl. Phys. Lett.*, Vol. 90, 172102, Apr. 2007 - S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai,, “
**Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy**,”*Appl. Phys. Lett.*, Vol. 90, 172106, Apr. 2007 - J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, L. S. Chang, J. I. Chyi, W. S. Liu, S. H. Chen, H. H. Lin, and P. W. Liu, “
**The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures**,”*Optics Express*, Vol. 15, No. 8, pp. 5120-5125, Apr. 2007 - H. S. Fan, Y. S. Su, F. H. Chu, F. Y. Chang, H. H. Lin, and C. F. Lin, “
**Opposite temperature effects of quantum-dot laser under dual-wavelength operation**,”*Appl. Phys. Lett.*, Vol. 90, 181113, Apr. 2007 - G. Tsai, D. L. Wang, C. E. Wu, C. J. Wu, Y. T. Lin, and H. H. Lin, “
**InAsPSb quaternary alloy grown by gas source molecular beam epitaxy**,”*J. of Crystal Growth*, Vol.301-302, pp.134-138, Apr. 2007 - H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, H. H. Lin, and K. K. Tiong, “
**Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells**,”*Phys. Stat. Sol. (a)*, Vol. 204, No. 2, 430-438, Feb. 2007 - C. H. Lin, W. W. Pai, F. Y. Chang, and H. H. Lin, “
**Comparative study of InAs quantum dots with different InGaAs capping methods**,”*Appl. Phys. Lett.*, 90, 063102, Feb. 2007 - T. T. Chen, C. L. Cheng, Y. F. Chen, F. Y. Chang, H. H. Lin, C. T. Wu, and C. H. Chen, “
**Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies**,”*Phys. Review B*, 75, 033310, Jan. 2007 - J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “
**Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures**,”*Nanotechnology*, 18, 015401, Jan. 2007 - C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. T. Liang, D. R. Hang, and H. H. Lin, “
**An experimental study on Gamma(2) modular symmetry in the quantum Hall system with a small spin splitting**,”*J. Phys: Condens. Matter*, 19, 026205, Jan. 2007 - L. C. Chou, Y. R. Lin, C. T. Wan, and H. H. Lin, “
**[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy**,”*Microelectronics Journal*, 37, 1511-1514, Dec. 2006 - Y. C. Wen, K. H. Lin, T. F. Kao, L. C. Chou, H. H. Lin, and C. K. Sun, “
**Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics**,”*J. of Applied Phys.*, 100, 103516, Nov. 2006 - P. W. Liu, G. Tsai, H. H. Lin, A. Krier, Q. D. Zhuang, and M. Stone, “
**Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy**,”*Appl. Phys. Lett.*, 89, 201115, Nov. 2006 - C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “
**InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer**,”*Jpn. J. of Applied Phys.*, Vol. 45, No. 8A, 6271-6274, Aug. 2006 - A. Krier, M. Stone, Q. D. Zhuang, P. W. Liu, G. Tsai, and H. H. Lin, “
**Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes**,”*Appl. Phys. Lett.*, 89, 091110, Aug. 2006 - H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, J. M. Lin, H. H. Lin, and K. K. Tiong, “
**Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells**,”*J. of Physics: Condensed Matter*, Vol. 18, 5927-5935, Jul. 2006 - C. R. Lu, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, and L. W. Sung, “
**Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers**,”*J. of Physics and Chemistry of Solids*, Vol. 66, 2082-2085, Nov. 2005 - W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, Y. T. Lin, C. S. Wang, “
**Performance evaluation of field-enhanced p-channel split-gate flash memory**,”*IEEE Electron Device Lett.*, Vol 26(9), 670-672, Sept. 2005 - H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih, and H. H. Lin, “
**Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents**,”*Appl. Phys. Lett.*, Vol. 87, 081908, Aug. 2005 - W. T. Chu, H. H. Lin, H. C. Sung, Y. H. Wang, Y. T. Lin, C. H. Wang, “
**Shrinkable triple self-aligned field-enhanced split-gate flash memory**,”*IEEE Trans. on Electron Device*, Vol. 51 (10), 1667-1671, Oct. 2004 - W. T. Chu, H. H. Lin, W. L. Tu, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, C. S. Tsai and C. S. Wang, “
**Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory**,”*IEEE Electron Device Lett.*, EDL-25 (9), 616-618, Sept. 2004 - M.-H. Mao, T.-Y. Wu, D.-C. Wu, F.-Y. Chang, and H.-H. Lin, “
**Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers**,”*Optical and Quantum Electronics*, Vol. 36 (10), 927-933, Aug. 2004 - W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, and C. S. Wang, “
**High SCR design for one-transistor split-gate full-featured EEPROM**,”*IEEE Electron Device Lett.*, EDL-25 (7), 498-500, Jul. 2004 - T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, H. Hung, J. S. Wang, J. Y. Chi, D. K. Shih, and H. H. Lin, “
**Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy**,”*J. Vac. Sci. Technol. B*, Vol. 22 (3), 1491-1494, Jun. 2004 - T. T. Chen, W. S. Su, Y. F. Chen, P. W. Liu, and H. H. Lin, “
**Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells**,”*Appl. Phys. Lett.*, Vol. 85 (9), 1526-1528, Jun. 2004 - Y.-M. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “
**Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells**,”*Appl. Phys. Lett.*, Vol. 84 (14), 2548-2550, Apr. 2004 - D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen and H. H. Lin, “
**Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation**,”*Physica.E*, 22, 308-311, Apr. 2004 - P. W. Liu, G. H. Liao, and H. H. Lin, “
**1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy**,”*Electronics Lett.*, Vol. 40 (3), 177-178, Feb. 2004 - F. Y. Chang, J. D. Lee, and H. H. Lin, “
**Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy**,”*Electronics Lett*, Vol. 40 (3), 179-180, Feb. 2004 - C. M. Lai, F. Y. Chang, H. H. Lin, and G. J. Jan, “
**Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy**,”*Jpn. J. Appl. Phys*, Vol. 43 (2), 735-738, Feb. 2004 - D. K. Shih, H. H. Lin, and Y. H. Lin, “
**Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applications**,”*IEE Proceedings – Optoelectronics*, Vol. 150, No. 3, pp. 253-258, Jun. 2003 - C. M. Lai, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, and J. Lee, “
**Temperature dependence of photoreflectance in InAs/GaAs quantum dot**,”*Appl. Physics. Lett*, Vol. 82, No. 22, pp. 3895-3897, Jun. 2003 - T. T. Chen, C. H. Chen, W. Z. Cheng, W. S. Su, M. H. Ya, Y. F. Chen, P. W. Liu, and H. H. Lin, “
**Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells**,”*J. Appl. Physics*, Vol. 93, No.12, pp. 9655-9658, Jun. 2003 - L. W. Sung, and H. H. Lin, “
**Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers**,”*Appl. Physics. Lett*, Vol. 83, No. 6, pp. 1107-1109, Jun. 2003 - G. R. Chen, H. H. Lin, J. S. Wang and D. K. Shih, “
**Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy**,”*J. Electronic Mat*, Vol. 32, No. 4, pp. 244-248, Apr. 2003 - F. Y. Chang, C. C. Wu, and H. H. Lin, “
**Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers**,”*Appl. Physics. Lett*, Vol. 82, No. 25, pp. 4477-4479, Apr. 2003 - D. K. Shih, H. H. Lin, L. W. Sung, T. Y. Chu, and T. R. Yang, “
**Band Gap Reduction in InAsN Alloys**,”*Jpn. J. Appl. Physic*, Vol. 42, pp. 375-383, Feb. 2003 - J-S. Hwang, M-F. Chen, K-I Lin, C-N. Tsai, W-C. Hwang, W-Y.Chou, H. H. Lin, and M. C. Chen, “
**Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance**,”*Jpn. J. Appl. Phys*, Vol. 42, pp. 5876-5879, Feb. 2003 - C. M. Lai, F. Y. Chang, H. H. Lin, an G. J. Jan, “
**A study of optical properties of InGaAs/GaAs quantum dots**,”*J. of the Korean Physical Society*, Vol. 42, pp. S114-S119, 2003 - P. W. Liu, M. H. Lee, H. H. Lin, and J.-R. Chen, “
**Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy**,”*Electronics Lett*, Vol. 38 (22), pp. 1355-1356, Oct. 2002 - Y. S. Chiu, M. H. Ma, W. S. Su, T. T. Chen, Y. F. Chen, and H. H. Lin, “
**Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb quantum wells induced by interface chemical bonds**,”*Appl. Physics. Lett*, Vol. 81, No.26, pp. 4943-4945, Oct. 2002 - D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, and H. H. Lin, “
**Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well**,”*Semicond. Sci. Technol*, 17, pp. 999-1003, Aug. 2002 - C. T. Lee, H. Y. Lee, and H. H. Lin, “
**Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers**,”*Jpn. J. Appl. Physic*, Vol. 41, pp. 5937-5940, Jul. 2002 - Y. Y. Ke, M. H. Ya, Y. F. Chen, J. S. Wang, and H. H. Lin, “
**Photoluminescence study of hydrogen passivation in InAsxN1-x/InGaAs single quantum well on InP**,”*Appl. Phys. Lett*, Vol. 80 (19), pp. 3539-3541, May 2002 - L. W. Sung, H. H. Lin, and C. T. Chia, “
**Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE**,”*J. Crystal Growth*, Vol. 241(3), pp. 320-324, Mar. 2002 - W. K. Hung, K. S. Cho, M. Y. Chem, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, “
**Nitrogen induced enhancement of the electron effective mass in InAsxN1-x**,”*Appl. Phys. Lett*, Vol. 80 (5), pp. 796-799, Feb. 2002 - W. C. Wu, H. Wang, and H. H. Lin, “
**GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs**,”*Electronics Lett*, Vol.38, No.4, pp. 185-186, Feb. 2002 - S. C. Yang, H. C. Chiu, Y.-J. Chan, H. H. Lin, J.-M. Kuo, “
**(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications**,”*IEEE Trans. on Electron Devices*, Vol. 48 No. 12, pp. 2906-2910, Dec. 2001 - J. S. Wang, H. H. Lin, L. W. Sung, and G. R. Chen, “
**Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy**,”*J. Vac. Sci. Technol. B*, Vol. 19(1), pp. 202-206, Oct. 2001 - Ding-Kang Shih, H. H. Lin, and Y. H. Lin, “
**InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m**,”*Electronics Lett*, Vol. 37, No. 22, pp. 1342-1343, Oct. 2001 - H. C. Chiu, S. C. Yang, Y. J. Chan, and H. H. Lin, “
**High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs**,”*IEICE Trans. Electron.*, Vol. E84-C, No. 10, pp. 1312-1317, Oct. 2001 - G. R. Chen, H. H. Lin, J. S. Wang, and D. K. Shih, “
**Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells**,”*J. of Appl. Physics.*, Vol. 90, pp. 6230-6235, Sept. 2001 - C. H. Lee, Y. H. Chang, C. F. Huang, M. Y. Huang, H. H. Lin, and C. P. Lee, “
**Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells**,”*Chinese Journal of Physics*, Vol. 39, No. 4, pp. 363-368, Aug. 2001 - R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, “
**Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice**,”*J. of Crystal Growth*, Vol. 227, pp.1034-1038, Jul. 2001 - C. A. Chang, C. Z. Wu, P. Y. Wang, X. J. Guo, Y. T. Wu, C. Y. Liang, F. C. Hwang, W. C. Jiang, F. J. Lay, L. W. Sung, and H. H. Lin, “
**Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy**,”*J. of Crystal Growth*, Vol. 225 (2-4), pp.550-555, May 2001 - C. F. Huang, Y. H. Chang, C. H. Lee, H. D. Yeh, C.-T. Liang, Y. F. Chen, H. H. Lin, H. H. Cheng, and G. J. Hwang, “
**Insulator-quantum Hall conductor transitions at low magnetic field**,”*Physical Review B*, Vol. 65, No. 16, pp. 045303-1 –, May 2001 - C. T. Lee, K. C. Shyu, I. J. Lin, and H. H. Lin, “
**GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer**,”*Materials Science and Engineering*, B74, pp. 147-150, Mar. 2000 - J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang, and H. H. Lin, “
**Mechanism for photoluminescence in an InyAs1–yN/InxGa1–xAs single quantum well**,”*Physical Review B*, Vol. 62, No. 16, pp. 10990-10994, Jan. 2000 - J. S. Liu, J. S. Wang, K. Y. Hsieh, H. H. Lin, “
**Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy**,”*J. Crystal Growth*, Vol. 206, pp. 15-22, 1999 - J. S. Wang and H. H. Lin, “
**Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy**,”*J. Vac. Sci. Technol. B*, Vol. 17, pp. 1997-2000, 1999 - J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, and H. H. Lin, “
**Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance**,”*J. Appl. Phys*, Vol. 86 (3), pp. 1460-1462, 1999 - K. T. Tsen, D. K. Ferry, J. S. Wang, C. S. Huang and H. H. Lin, “
**Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy**,”*Physica B: Condensed Matter*, Volume 272, Issues 1-4, pp. 416-418, 1999

- Hao-Kai Hsieh1, Chieh Chou1, Hao-Hsiung Lin*,1,2,3, Jiunn-Jye Luo4, and Shao-Yi Li4, “
**Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector**,”*IEEE 2018次世代電子元件國際研討會 (ISNE 2018)*, 集思北科大會議中心 台北, May 2018 - Yen-Cheng Ko, Ding-Lun Wu, Che-Wei Yang, and Hao-Hsiung Lin, “
**Reactive-Ion Etching of Bismuth Thin Film Using CHF3**,”*International Electron Devices & Materials Symposium IEDMS2018*, Keelung, Taiwan, ROC, 2018 - Xinyou Liu, Yen-Cheng Ko, Chieh Chou and Hao-Hsiung Lin, “
**Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line method**,”*International Electron Devices & Materials Symposium IEDMS2018*, Keelung, Taiwan, ROC, 2018 - F. W. Pranoto, C. Y. Tsai, Y. C. Liao, L. C. Chen, K. H. Chen, H. H. Lin, and Z. C. Feng, “
**Photoluminescence and Raman scattering of degenerate InN**,”*OPTIC 2014, optics and photonics Taiwan, international conference 2014*, 2014-Thu-S0102-O006, Taichung, Taiwan, Dec. 2014 - M. C. Liu, Z. C. Feng, and H. H. Lin, “
**X-ray absorption near edge structure of silicon in indium arsenide**,”*OPTIC 2014, optics and photonics Taiwan, international conference 2014*, 2014-Thu-S1001-O002, Taichung, Taiwan, Dec. 2014 - T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “
**Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer**,”*OPTIC 2014, optics and photonics Taiwan, international conference 2014*, 2014-Fri-P1002-P006, Taichung, Taiwan, Dec. 2014 - C. Y. Tsai, B. Xin, Z. C. Feng, Y. M. Zhang, R. X. Jia, and H. H. Lin, “
**Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate**,”*OPTIC 2014, optics and photonics Taiwan, international conference 2014*, 2014-Fri-P1002-P010, Taichung, Taiwan, Dec. 2014 - S. C. Chen, Y. H. Lin, and H. H. Lin, “
**Study of twin defects in (111)B GaAsSb by X-ray diffraction**,”*IEDMS 2014, international electron devices and materials symposium*, 1113, Hualien, Taiwan, Nov. 2014 - T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “
**Effect of focued ion beam imaging process on the crystallinity of InAs**,”*IEDMS 2014, international electron devices and materials symposium*, 1178, Hualien, Taiwan, Nov. 2014 - Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “
**Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity**,”*MIOMD 2014 infrared optoelectronics: materials and devices*, 50, Montpellier, France, Oct. 2014 - C. Y. Tsai, W. C. Chen, P. H. Chang, C. I. Wu, and H. H. Lin, “
**Band discontinuity in InAsPSb alloy system,**,”*MIOMD 2014 infrared optoelectronics: materials and devices*, 58, Montpellier, France, Oct. 2014 - C. Y. Tsai, M. C. Liu, Y. C. Chin, Z. C. Feng, and H. H. Lin, “
**Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure**,”*21th Symposium on nano device technology*, Hsinchu, Taiwan, May 2014 - Y. H. Lin, S. C. Chen, Y. R. Chen, and H. H. Lin, “
**Structural properties of GaAsSb grown on (111)B GaAs**,”*21th Symposium on nano device technology*, Hsinchu, Taiwan, May 2014 - C. X. Wang, F. D. Li, S. C. Wang, M. Zhu, X. Zhang, H. H. Lin, and Z. C. Feng, “
**Properties of Variable Al Content of AlGaN Layers Grown by MOCVD**,”*OPTIC 2013, optics and photonics Taiwan, international conference 2013*, SAT-S1006-O002, Zhongli, Taiwan, Dec. 2013 - B. W. Wang, C. J. Hong-Liao, H. H. Lin, and Z. C. Feng, “
**Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering**,”*IEDMS 2013, international electron devices and materials symposium*, P2-24, Nantou, Taiwan, Nov. 2013 - C. X. Wang, Y. T. He, M. T. Niu, J. Y. Yao, E. Jones, Z. R. Qiu, X. Zhang, H. H. Lin, and Z. C. Feng, “
**Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes**,”*IEDMS 2013, international electron devices and materials symposium*, P2-36, Nantou, Taiwan, Nov. 2013 - C. Y. Tsai, Y. C. Chin, and H. H. Lin, “
**Raman spectroscopy of GaAsPSb alloys**,”*IEDMS 2013, international electron devices and materials symposium*, P2-62, Nantou, Taiwan, Nov. 2013 - H. M. Wu, Y. J. Yang, and H. H. Lin, “
**Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate**,”*TACT 2013 international thin films conference*, C-O-429001, Taipei, Taiwan, Oct. 2013 - Y. R. Chen, and H. H. Lin, “
**Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs**,”*40th international symposium on compound semiconductors (ISCS 2013)*, MoPC-01-04, Kobe, Japan, May 2013 - Y. C. Chin, H. H. Lin, H. S. Guo, and C. H. Huang, “
**GaAsPSb and its application to heterojunction bipolar transistors**,”*40th international symposium on compound semiconductors (ISCS 2013)*, MoPC-02-11, Kobe, Japan, May 2013 - J. Wu, Y. T. Lin and H. H. Lin, “
**Defects probing by temperature dependence Raman scattering of GaAsSbN**,”*IEDMS 2012, international electron devices and materials symposium*, CO05, Kao-hsiung, Taiwan, Dec. 2012 - H. M. Wu, S. J. Tsai, H. I. Ho, H. H. Lin, and Y. J. Yang, “
**A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells**,”*IEDMS 2012, international electron devices and materials symposium*, AP17, Kaohsiung, Taiwan, Dec. 2012 - S. H. Li, C. J. Wu and H. H. Lin, “
**Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution**,”*IEDMS 2012, international electron devices and materials symposium*, CP09, Kaohsiung, Taiwan, Dec. 2012 - W. C. Chen, L. H. Chen, Y. T. Lin and H. H. Lin, “
**Structural properties of InAs nanowires grown by GSMBE**,”*IEDMS 2012, international electron devices and materials symposium*, CP45, Kaohsiung, Taiwan, Dec. 2012 - W. C. Chen, L. H. Chen, Y. T. Lin, and H. H. Lin, “
**Slanted InAs nanowires gorwn by GSMBE**,”*OPTIC 2012, optics and photonics Taiwan, international conference 2012*, CO05, Taipei, Taiwan, Dec. 2012 - C. L. Chiou, Z. C. Feng, and H. H. Lin, “
**Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy**,”*OPTIC 2012, optics and photonics Taiwan, international conference 2012*, Taipei, Taiwan, Dec. 2012 - H. H. Lin, “
**Sb-based zincblende alloys with strong structural disorder**,”*Indo-Taiwan workshop on nanodevices*, Bangalore, India, Nov. 2012 - C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “
**Study on the structural properties of InP0.52Sb0.48 on GaAs**,”*MIOMD-XI, infrared optoelectronics: materials and devices*, Chicago, USA, Oct. 2012 - H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “
**Short range structure of dilute nitride GaAsSbN**,”*Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications*, Rostov-on-Don, Russia, Jun. 2012 - C. J. Wu, G. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “
**Study on the structural properties of InP0.52Sb0.48 on GaAs**,”*2012 Taiwan MBE Conference*, Tainan, Taiwan, May 2012 - Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “
**Structural properties of GaAsSb grown on GaAs**,”*2012 Taiwan MBE Conference*, Tainan, Taiwan, May 2012 - G. T. Chen, C. J. Wu, Z. C. Feng, and H. H. Lin, “
**Study on the lattice structure of InAsPSb grown on GaAs**,”*2012 Taiwan MBE Conference*, Tainan, Taiwan, May 2012 - L. H. Chen, Y. T. Lin, and H. H. Lin, “
**MBE growth of InAs nanowires on Si**,”*2012 Taiwan MBE Conference*, Tainan, Taiwan, May 2012 - C. J. Wu, K. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “
**X-ray absorption find structures of InPSb alloys**,”*International photonics conference 2011 (IPC2011)*, A-SA-I 7-7, Tainan, Taipei, Dec. 2011 - C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “
**Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy**,”*2011 International electron devices and materials symposia*, C2-5, Taipei, Taiwan, Nov. 2011 - Y. T. Lin, J. S. Wu, Z. C. Feng, and H. H. Lin, “
**Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy**,”*2011 International electron devices and materials symposia*, C3-2, Taipei, Taiwan, Nov. 2011 - Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “
**Structural properties of (111)B GaAsSb grown on GaAs substrates**,”*18th American conference on crystal growth and epitaxy, ACCGE-18*, Monterey, California, USA, Jul. 2011 - C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “
**Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs**,”*38th international symposium on compound semiconductors (ISCS 2011)*, P1. 08, Berlin, Germany, May 2011 - C. J. Wu, G. Tsai, Z. C. Feng, and H. H. Lin, “
**Extended X-ray absorption fine structure of InAsPSb**,”*23rd international conference on indium phosphide and related materials (IPRM 2011)*, P-31, Berlin, Germany, May 2011 - Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “
**Orentation dependent phase separation in GaAsSb**,”*2011 AVS international plasma workshop – on processing and characterization of advanced materials*, A007, Taipei, Mar. 2011 - C. J. Wu, S. W. Lo, and H. H. Lin, “
**'InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy**,”*2010 internal conference on optics and photonics in Taiwan*, Tainan, Taiwan, Dec. 2010 - Y. R. Lan, C. J. Wu, H. H. Lin, L. Y. Chang, and Z. C. Feng, “
**Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy**,”*2010 international conference on optics and photonics in Taiwan*, Tainan, Taiwan, Dec. 2010 - C. J. Wu, S. W. Lo, and H. H. Lin, “
**InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy**,”*2010 international electron devices and materials symposia*, C3-4, Jhongli, Taiwan, Nov. 2010 - J. S. Tzeng, C. J. Wu, C. J. Hong-Liao, and H. H. Lin, “
**Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy**,”*2010 international electron devices and materials symposia*, C3-6, Jhongli, Taiwan, Nov. 2010 - Y. T. Lin, Y. R. Lin, C. H. Ko, C. H. Wann, and H. H. Lin, “
**Hetero-epitaxy of InAs on patterened Si (100) substrates**,”*2010 international electron devices and materials symposia*, C4-2, Jhongli, Taiwan, Nov. 2010 - C. J. Wu, Y. R. Lan, L. Y. Chang, Z. C. Feng, and H. H. Lin, “
**X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy**,”*2010 Micro-optics conference (MOC'10)*, WP84, Hsintsu, Taiwan, Oct. 2010 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well**,”*10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X)*, Shanghai, China, Sept. 2010 - T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE**,”*16th international conference on crystal growth (ICCG-16)*, Beijing, China, Aug. 2010 - Y. R. Lan, C. J. Wu, H. H. Lin, T. S. Chan, and Z. C. Feng, “
**Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy**,”*Proceedings of MBE Taiwan 2010*, pp. 92-93, Taipei, Taiwan, May 2010 - J. M. Lin, L. C. Chou, and H. H. Lin, “
**The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy**,”*22nd international conference on indium phosphide and related materials (IPRM 2010)*, Kagawa, Japan, May 2010 - T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE**,”*Proceedings of MBE Taiwan 2010*, pp. 57-58, Taipei, Taiwan, May 2010 - Y. T. Lin, T. C. Ma, and H. H. Lin, “
**Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy**,”*Proceedings of MBE Taiwan 2010*, pp. 59-60, Taipei, Taiwan, May 2010 - S. W. Lo, C. J. Wu, and H. H. Lin, “
**Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy**,”*Proceedings of MBE Taiwan 2010*, pp. 86-87, Taipei, Taiwan, May 2010 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Optical properties of As-rich InAsSb/InAsPSb multiple quantum well**,”*Proceedings of MBE Taiwan 2010*, pp. 90-91, Taipei, Taiwan, May 2010 - J. S. Tzeng, C. J. Wu, and H. H. Lin, “
**Raman scattering in InAsPSb quaternary alloys**,”*Proceedings of MBE Taiwan 2010*, pp. 90-91, Taipei, Taiwan, May 2010 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells**,”*OPT2009*, AO225, Taipei, Taiwan, Dec. 2009 - Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “
**Nitrogen atomic rearrangement in thermally annealed GaAsSbN**,”*OPT2009*, IO141, Taipei, Taiwan, Dec. 2009 - Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “
**Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD**,”*2009 International electron devices and materials symposia*, B1-2, Taoyuan, Taiwan, Nov. 2009 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Photoluminescence of InAsSb/InAsPSb quantum well**,”*2009 International electron devices and materials symposia*, B2-2, Taoyuan, Taiwan, Nov. 2009 - J. M. Lin, L. C. Chou, and H. H. Lin, “
**The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells**,”*2009 International electron devices and materials symposia*, GB24, Taoyuan, Taiwan, Nov. 2009 - H. H. Lin, “
**Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures**,”*2009 International electron devices and materials symposia*, B3-1, Taoyuan, Taiwan, Nov. 2009 - Y. T. Lin, T. C. Ma, and H. H. Lin, “
**A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species**,”*2009 International electron devices and materials symposia*, B3-2, Taoyuan, Taiwan, Nov. 2009 - T. C. Ma, and H. H. Lin, “
**Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy**,”*2009 International electron devices and materials symposia*, B3-4, Taoyuan, Taiwan, Nov. 2009 - T. C. Ma and H. H. Lin, “
**Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN**,”*MBE Taiwan 2009*, S-8, Hualien, Taiwan, Jun. 2009 - Y. T. Lin, T. C. Ma, S. P. Wang, and H. H. Lin, “
**Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN**,”*MBE Taiwan 2009*, S-14, Hualien, Taiwan, Jun. 2009 - C. J. Wu, G. Tsai, and H. H. Lin, “
**InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy**,”*Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN*, S-15, Hualien, Taiwan, Jun. 2009 - Y. R. Lin, J. H. Chu, and H. H. Lin, “
**Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers**,”*International conference on optics and photonics in Taiwan (OPT’08)*, Sat-S17-01, Taipei, Taiwan, Dec. 2008 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction**,”*International conference on optics and photonics in Taiwan (OPT’08)*, Sat-S40-03, Taipei, Taiwan, Dec. 2008 - S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN**,”*2008 International electron devices and materials symposia*, B1-1, Taichung, Taiwan, Nov. 2008 - Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “
**Band structure of dilute nitride GaAsSbN**,”*2008 International electron devices and materials symposia*, B3-1, Taichung, Taiwan, Nov. 2008 - Y. C. Chou, G. Tsai, and H. H. Lin, “
**Photoluminescence study of InAsPSb epilayers grown on GaAs substrates**,”*2008 International electron devices and materials symposia*, B5-1, Taichung, Taiwan, Nov. 2008 - Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “
**Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics**,”*9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9)*, pp. 36-37, Freiburg, Germany, Sept. 2008 - C. J. Wu, and H. H. Lin, “
**Band alignment of InAsSb/InAsPSb quantum wells**,”*9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9)*, pp. 42-43, Freiburg, Germany, Sept. 2008 - H. H. Lin, T. C. Ma, Y. T. Lin, C. K. Chen, and T. Y. Chen, “
**Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy**,”*Proceedings of MBE Taiwan 2008*, pp. 24-25, Hsinchu, Taiwan, Jun. 2008 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Band alignment of InAsSb/InAsPSb quantum well**,”*Proceedings of MBE Taiwan 2008*, pp. 35-36, Hsinchu, Taiwan, Jun. 2008 - Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “
**Origin of the annealing-induced blue-shift in GaAsSbN**,”*20th International conference on InP and related materials*, Paris, France, May 2008 - C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “
**GaAsSbN/GaAs long wavelength PIN detectors**,”*20th International conference on InP and related materials*, Paris, France, May 2008 - K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, and S. D. Lin, “
**Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure**,”*American Physical Society spring meeting 2008 (APS2008)*, New Orleans, Louisiana, U.S.A., Feb. 2008 - C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m**,”*International electron devices and materials symposia*, B1-4, Hsinchu, Taiwan, Dec. 2007 - L. C. Chou and H. H. Lin, “
**Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy**,”*International electron devices and materials symposia*, B4-3, Hsinchu, Taiwan, Dec. 2007 - I. C. Chen, G. Tsai, and H. H. Lin, “
**Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10**,”*International electron devices and materials symposia*, B4-5, Hsinchu, Taiwan, Dec. 2007 - Y. R. Lin and H. H. Lin, “
**Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors**,”*International electron devices and materials symposia*, B4-6, Hsinchu, Taiwan, Dec. 2007 - Y. T. Lin, T. C. Ma, T. Y. Chen and H. H. Lin, “
**Effect of thermal annealing on the optical properties of GaAsSbN**,”*International electron devices and materials symposia*, B4-2, Hsinchu, Taiwan, Dec. 2007 - C. J. Wu, G. Tsai, and H. H. Lin, “
**Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally**,”*OPT2007*, Taichung, Taiwan, Dec. 2007 - Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “
**Origin of the annealing-induced blue-shift in GaAsSbN bulk layers**,”*OPT2007*, Taichung, Taiwan, Dec. 2007 - G. Tsai, D. L. Wang, and H. H. Lin, “
**Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy**,”*OPT2007*, Taichung, Taiwan, Dec. 2007 - L. C. Chou and H. H. Lin, “
**[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy**,”*MBE Taiwan 2007*, pp. 109-111, Kaohsiung, Taiwan, Jun. 2007 - T. C. Ma, T. Y. Chen, Y. T. Lin, and H. H. Lin, “
**Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates**,”*MBE Taiwan 2007*, pp. 112-114, Kaohsiung, Taiwan, Jun. 2007 - T. C. Ma, Y. T. Lin, T. Y. Chen, L. C. Chou, and H. H. Lin, “
**Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy**,”*17th International conference on InP and related materials*, Matsu, Japan, May 2007 - C. J. Wu, G. Tsai, D. L. Wang, and H. H. Lin, “
**InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy**,”*8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8)*, pp, 66-67, Bad Ischl, Austria, May 2007 - G. Tsai, D. L. Wang, and H. H. Lin, “
**Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy**,”*8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8)*, pp. 164-165, Bad Ischl, Austria, May 2007 - T. Y. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “
**Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy**,”*International electron devices and materials symposia*, PA-060, Tainan, Taiwan, Dec. 2006 - Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “
**Effects of thermal annealing on the energy gap of GaAsSbN**,”*International electron devices and materials symposia*, OA-008, Tainan, Taiwan, Dec. 2006 - Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “
**Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy**,”*OPT2006*, AO-11, Hsinchu, Taiwan, Dec. 2006 - Y. R. Lin, J. S. Wang, and H. H. Lin, “
**Electric vertically coupled quantum dots grown by molecular beam epitaxy**,”*OPT2006*, AO-21, Hsinchu, Taiwan, Dec. 2006 - J. M. Lin, L. C. Chou, and H. H. Lin, “
**A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy**,”*OPT2006*, AO-33, Hsinchu, Taiwan, Dec. 2006 - D. L. Wang, G. Tsai, C. J. Wu, C. E. Wu, F. Tseng, and H. H. Lin, “
**Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy**,”*OPT2006*, AO-47, Hsinchu, Taiwan, Dec. 2006 - T. C. Ma, Y. T. Lin, T. Y. Chen, and H. H. Lin, “
**Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy**,”*OPT2006*, AO-53, Hsinchu, Taiwan, Dec. 2006 - Y. C. Wen, L. C. Chou, H. H. Lin, K. H. Lin, C. Y. Chen, and C. K. Sun, “
**Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields**,”*OPT2006*, CO-02, Hsinchu, Taiwan, Dec. 2006 - G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “
**InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy**,”*14th international conference on molecular beam epitaxy (MBE2006)*, TUA2-6, Tokyo, Japan, Oct. 2006 - H. H. Lin, “
**MBE growth of quaternary InAsPSb alloy**,”*MBE Taiwan 2006 and high K materials workshop*, Chunli, Taiwan, Jun. 2006 - T. C. Ma, T. Y. Chen, S. K. Chang, Y. T. Lin, and H. H. Lin, “
**GaAsSbN grown on GaAs by gas source molecular beam epitaxy**,”*MBE Taiwan 2006 and high K materials workshop*, Chunli, Taiwan, Jun. 2006 - G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “
**InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy**,”*MBE Taiwan 2006 and high K materials workshop*, Chunli, Taiwan, Jun. 2006 - C. E. Wu, G. Tsai, and H. H. Lin, “
**Mid-infrared InAsPSb/InAsSb quantum-well light emitter**,”*MBE Taiwan 2006 and high K materials workshop*, Chuli, Taiwan, Jun. 2006 - L. C. Chou, Y. R. Lin, and H. H. Lin, “
**[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy**,”*6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS)*, Nottingham, UK, Apr. 2006 - G. Tsai and H. H. Lin, “
**Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy**,”*17th Indium Phosphide and Related Materials*, Glasgow, Scotland, 2005 - H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih and H. H. Lin, “
**Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents**,”*17th Indium Phosphide and Related Materials*, Glasgow, Scotland, 2005 - H. H. Lin, P. W. Liu, C. L. Tsai, G. H. Liao, and J. Lin, “
**GaAsSb/GaAs quantum wells grown by MBE**,”*MBE Taiwan 2005*, pp. 15-17, Hsinchu, Taiwan, 2005 - C. L. Tsai, P. W. Liu, G. H. Liao, M. H. Lee, and H. H. Lin, “
**Study on the band line-up of GaAsSb/GaAs quantum wells**,”*MBE Taiwan 2005*, Hsinchu, Taiwan, 2005 - C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “
**InAs/InGaAs/GaAs coupled quantum-dot laser**,”*MBE Taiwan 2005*, pp. 15-17, Hsinchu, Taiwan, 2005 - G. Tsai and H. H. Lin, “
**InPSb bulk layers grown by gas source molecular beam epitaxy**,”*Mid-infrared optoelectronics: Materials and Devices (MIOMD 7)*, Lancaster, UK, 2005 - C. L. Tsai, C. T. Wan, P. W. Liu, G. H. Liao, and H. H. Lin, “
**Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers**,”*Proceedings of 2005 EDMS*, B58, Kaohsiung, Taiwan, 2005 - P. W. Liu, G. Tsai, H. H. Lin, and T. Krier, “
**Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy**,”*OPT2005*, A-FR-II 4-2, Tainan, Taiwan, 2005 - G. Tsai, and H. H. Lin, “
**Growth of InPSb on InAs inside a miscibility gap using gas source MBE**,”*OPT2005*, A-FR-II 4-3, Tainan, Taiwan, 2005 - H. P. Hsu, Y. S. Huang, P.W. Liu, H. H. Lin, and K. K. Tiong, “
**Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells**,”*OPT2005*, PA-FR1-089, Tainan, Taiwan, 2005 - C. Y. Chen, C. M. Lai, and H. H. Lin, “
**Numerical simulation on optical properties of GaN/AlN quantum dots**,”*OPT2005*, PA-FR1-137, Tainan, Taiwan, 2005 - G. L. Wang, Y. S. Huang, H. H. Lin, and C. H. Chan, “
**The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well**,”*OPT2005*, PA-FR1-196, Tainan, Taiwan, 2005 - H. H. Lin, P. W. Liu, G. H. Liao, and C. L. Tsai, “
**GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes**,”*Proceedings of MBE Taiwan*, pp. 28-30, Kao-hsiung, Taiwan, May 2004 - F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “
**Growth of InAs quantum dots with light emission at 1.3 m**,”*Proceedings of MBE Taiwan*, pp. 40-42, Kao-hsiung, Taiwan, May 2004 - F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “
**InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy**,”*Proceeding of 16th Indium Phosphide and Related Materials*, Kogoshima, Japan, 2004 - G. Tsai, and H. H. Lin, “
**MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications**,”*OPT 2004*, A-SA-II 4-2, Chung-Li, Taiwan, 2004 - 142. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “
**Study on high-power resonant-cavity light-emitting diodes**,”*OPT 2004*, A-SU-I 7-5, Chung-Li, Taiwan, 2004 - C. H. Yu, K. K. Kao, M. H. Mao, F. Y. Chang, and H. H. Lin, “
**Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection**,”*OPT 2004*, A-SU-II 10-5, Chung-Li, Taiwan, 2004 - F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “
**Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm**,”*Proceedings of 2004 IEDMS*, B3.3, pp. 289-29, Hsinchu, Taiwan, 2004 - G. H. Liao, C. L. Tsai, P. W. Liu, J. Lin, and H. H. Lin, “
**Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers**,”*Proceedings of 2004 IEDMS*, B7.1, pp.471-474, Hsinchu, Taiwan, 2004 - F. Y. Chang, T. C. Wu, and H. H. Lin, “
**Effect of deposition method on the density of InAs/InGaAs quantum dot**,”*Proceeding of 15th Indium Phosphide and Related Materials*, Santa Barbara, USA, 2003 - H. H. Lin, P. W. Liu, and J. R. Chen, “
**GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser**,”*Proceedings of the sixth Chinese optoelectronics symposium*, pp. 112-115, Hong Kong, 2003 - M.-H. Mao, T.-Y. Wu, F.-Y. Chang, and H.-H. Lin, “
**1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties**,”*Proceedings of the 16th annual meeting of IEEE LEOS*, pp. 118-119, Tucson, USA, 2003 - H.-H. Lin, D.-K. Shih, Y.-H. Lin and K.-H. Chiang, “
**InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers**,”*Proceedings of the 16th annual meeting of IEEE LEOS*, pp. 806-807, Tucson, USA, 2003 - M.-H. Mao, D.-M. Yeh, P.-W. Liu, H.-H. Lin, H.-L. Chen and C.-T. Pan, “
**Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique**,”*Proceedings of the 16th annual meeting of IEEE LEOS*, pp. 1024-1025, Tucson, USA, 2003 - H. H. Lin, P. W. Liu, and G. H. Liao, “
**GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers**,”*Proceedings of electron devices and materials symposium*, pp. I59-I62, Keelung, Taiwan, 2003 - L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “
**Resonant-cavity light-emitting diodes with coupled cavity**,”*Proceedings of electron devices and materials symposium*, pp. 348-350, Keelung, Taiwan, 2003 - F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “
**InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy**,”*Proceedings of electron devices and materials symposium*, pp. 491-494, Keelung, Taiwan, 2003 - Y. M. Chang, N. A. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “
**Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures**,”*Proceedings of CLEO/Pacific Rim 2003*, Vol. 2, pp. 481, Taipei, Taiwan, 2003 - C. L. Hsieh, T. M. Liu, M. C. Tien, C. K. Sun, L. W. Sung, and H. H. Lin, “
**Femtosecond carrier dynamics in InGaAsN single quantum well**,”*Proceedings of CLEO/Pacific Rim 2003*, Vol. 1, pp. 83, Taipei, Taiwan, 2003 - G. Tsai, P. W. Liu, and H. H. Lin, “
**Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy**,”*Proceedings of OPT’03*, Vol. 2, pp. 27-2, Taipei, Taiwan, 2003 - H. P. Hsu, Y. S. Huang, P. W. Liu, and H. H. Lin, “
**Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells**,”*Proceedings of OPT’03*, Vol. 3, pp. 71-7, Taipei, Taiwan, 2003 - G. H. Liao, P. W. Liu, and H. H. Lin, “
**1.3m GaAsSb/GaAs single quantum well laser diode**,”*Proceedings of OPT’03*, Vol. 3, pp. 274-, Taipei, Taiwan, 2003 - T. Y. Chu, H. H. Lin, and D. K. Shih, “
**Band gap reduction in InAsN alloy**,”*Proceeding of 14th Indium Phosphide and Related Materials*, pp.253-256, Stockholm, Sweden, 2002 - P.-W. Liu, M.-H. Lee, and H. H. Lin, “
**Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser**,”*15th Annual Meeting of IEEE Lasers and Electro-optics Society*, Glasgow, Scotland, 2002 - T. M. Liu, M. C. Tien, J. W. Shi, C. K. Sun, L. W. Sung, H. H. Lin, B. R. Wu, and N. T. Yeh, “
**Femtosecond carrier dynamics in InGaAsN single quantum well**,”*Proceedings of OPT’02*, pp. 16-18, Taipei, Taiwan, ROC, 2002 - L. W. Sung, G. Tsai, and H. H. Lin, “
**1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE**,”*Proceedings of OPT’02*, pp. 142-144, Taipei, Taiwan, ROC, 2002 - D. K. Shih, H. H. Lin, and Y. F. Chen, “
**Structural properties and Raman modes of InAsN bulk films on (100) InP substrates**,”*Proceedings of OPT’02*, pp. 361-363, Taipei, Taiwan, ROC, 2002 - L. W. Sung, G. Tsai, and H. H. Lin, “
**1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE**,”*Proceedings of 2002 IEDMS*, pp. 37-40, Taipei, Taiwan, ROC, 2002 - D. K. Shih, H. H. Lin, and Y. F. Chen, “
**Raman scattering characterization of InAsN bulk film on (100) InP substrates**,”*Proceedings of 2002 IEDMS*, pp. 43-46, Taipei, Taiwan, ROC, 2002 - P. W. Liu, M. H. Lee, J. R. Chen, and H. H. Lin, “
**Low-threshold ~1.3m GaAsSb quantum well laser**,”*Proceedings of 2002 IEDMS*, pp. 125-128, Taipei, Taiwan, ROC, 2002 - F. Y. Chang, T. C. Wu, and H. H. Lin, “
**1.3m InAs/InGaAs quantum dot lasers grown by GSMBE**,”*Proceedings of 2002 IEDMS*, pp. 236-239, Taipei, Taiwan, ROC, 2002 - C. M. Lai, F. Y. Chang, C. W. Chang, H. H. Lin, and G. J. Jan, “
**Optical characterization on InAs/GaAs quantum dots**,”*Proceedings of 2002 IEDMS*, pp. 333-336, Taipei, Taiwan, ROC, 2002 - D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “
**InAsN Grown by Plasma-assisted Gas Source MBE**,”*2001 MRS Fall meeting, Symposium H*, H2.5, Boston, USA, Nov. 2001 - D. K. Shih, H. H. Lin, L. W. Sung, and T. Y. Chu, “
**Bulk InAsN Films Grown by Plasma-Assisted Gas Source Molecular Beam Epitaxy**,”*Proceeding of 13th Indium Phosphide and Related Materials*, pp.555-558, Nara, Japan, 2001 - D. K. Shih, H. H. Lin, and Y. H. Lin, “
**Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE**,”*Middle Infrared Coherent Sources MICS’01 International Workshop*, St. Petersburg, Russia, 2001 - L. W. Sung, H. H. Lin, and C. T. Chia, “
**V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE**,”*2001 MRS Fall Meeting*, I3.22, Boston, MA, USA, 2001 - M. H. Lee, P. W. Liu, and H. H. Lin, “
**Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well**,”*2001 Electron Devices and Materials Symposia*, WB1-4, pp. 118-1, KaoHsiung, Taiwan, ROC, 2001 - T. Y. Chu, D. K. Shih, and H. H. Lin, “
**On the InAs(N)/InGaAs quantum wells**,”*2001 Electronics Devices and Materials Symposia*, WB1-6, pp.126-12, Kaohsiung, Taiwan, ROC, 2001 - L. W. Sung, H. H. Lin, and C. T. Chia, “
**Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE**,”*Proceeding of Optics and Photonics Taiwan*, TA3-1, pp. 41-43, Kaohsiung, Taiwan, ROC, 2001 - D. K. Shih, H. H. Lin, and Y. H. Lin, “
**Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE**,”*Proceeding of Optics and Photonics Taiwan’01*, pp. 379-381, Kaohsiung, Taiwan, ROC, 2001 - P. W. Liu and H. H. Lin, “
**Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well**,”*Proceeding of Optics and Photonics Taiwan '01*, pp. 441-443, Kaohsiung, Taiwan, ROC, 2001 - W. C. Wu, H. Wang, and H. H. Lin, “
**A fully integrated broadband amplifier with 161% 3-db bandwidth**,”*Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific*, Vol. 1, pp. 291-, Taiwan, ROC, 2001 - H. C. Chiu, S. C. Yang, C. K. Lin, Y. J. Chan, and H. H. Lin, “
**In0.49Ga0.51P/ In0.15Ga0.85As doped-channel HFETs with low parasitic resistance by inserting a Si-doped layer**,”*2000 topical workshop on heterostructure microelectronics*, Nagoya, Aug. 2000 - S.C. Yang, S.C. Chiou, Y.-J. Chan, and H. H. Lin, “
**Selectively dry-etched In0.49Ga0.51P/ In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma**,”*12th international conference on InP and related material*, Williamsburg, Virginia, USA, May 2000 - J. S. Wang, H. H. Lin, L. W. Sung and G. R. Chen, “
**Growth and characterization of InAsN alloys**,”*12th international conference on InP and related material*, Williamsburg, Virginia, USA, May 2000 - H. H. Lin, “
**InAsN grown by gas source molecular beam epitaxy**,”*The 4th Seminar on Science and Technology (ROC-Japan Exchange Program) -- Conference on Nitride Semiconductor Materials and Devi*, Tokyo, Japan, Mar. 2000 - L. W. Sung, H. H. Lin, “
**Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE**,”*International Photonics Conference 2000*, pp. 208-211, Hsinchu, Taiwan, 2000 - D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “
**Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy**,”*International Photonics Conference 2000*, pp. 212-216, Hsinchu, Taiwan, 2000 - D. K. Shih and H. H. Lin, “
**InAsN grown by GSMBE**,”*2000 International Electron Devices and Materials Symposia*, pp. 62-65, Chung-Li, Taiwan, 2000 - L. W. Sung, H. H. Lin, “
**Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE**,”*2000 International Electron Devices and Materials Symposia*, pp. 66-69, Chung-Li, Taiwan, 2000 - F. Y. Chang and H. H. Lin, “
**Anomalous photoluminescence of InGaP/GaAs quantum well grown by GSMBE**,”*2000 International Electron Devices and Materials Symposia*, pp. 99-102, Chung-Li, Taiwan, 2000 - C. W. Liu, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin, “
**Light emission and detection by metal oxide silicon tunneling diodes**,”*1999 IEDM*, Washington D. C., USA, Dec. 1999 - J. S. Wang, H. H. Lin, L. W. Sung, “
**InAsN quantum wells grown on InP by gas source MBE**,”*3rd international conference on mid-infrared optoelectronics materials and devices*, O21, Aachen, Germany, 1999 - L. W. Sung, J. S. Wang, H. P. Shiao, C. Y. Wang, I. F. Jang, T. T. Shih, Y. K. Tu, and H. H. Lin, “
**1.55m asymmetric coupled quantum well structure for laser-modulator integration**,”*1999 Electron Devices and Materials Symposia*, 3D04, Taoyuan, Taiwan, ROC, 1999 - J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “
**InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy**,”*1999 Electron Devices and Materials Symposia*, 1C05, Taoyuan, Taiwan, ROC, 1999 - J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “
**Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy**,”*Optics and Photonics/Taiwan'99*, FR-III4-A-4, Chung-Li, ROC, 1999 - G. R. Chen, J. S. Wang, and H. H. Lin, “
**Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells**,”*Optics and Photonics/Taiwan'99*, Chung-Li, FR-I6-A-8, ROC, 1999

- 楊哲維、劉繼文、林浩雄、葉凌彥, “
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**環境光偵測器**,” 中華民國，發明第 I 335075號, Dec. 2010 - H. H. Lin, T. C. Ma, Y. R. Lin, J. P. Wang, and C. H. Huang, “
**Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye**,” U. S. Patent No. 7,538,406, May 2009 - 林浩雄、馬大鈞、吳俊逸, “
**類人眼之光偵測器**,” 中華民國，發明第 I 287877, Oct. 2007 - 邱煥凱、林浩雄, “
**集總常數補償式高低通平衡至不平衡轉換器**,” 中華民國發明專利，No. 139060, Jul. 2001 - 洪儒菘、林浩雄, “
**背靠背式雙波長半導體雷射元件**,” 中華民國發明專利，No. 135640, Jun. 2001 - H. K. Chiou and H. H. Lin, “
**Lumped constant compensated high/low pass balanced-to-unbalanced transition**,” U. S. Patent No. 6052039, Apr. 2000