馮哲川教授的著作列表 - Publication List of Zhe-Chuan Feng

Publication List of 馮哲川 Zhe-Chuan Feng

Journal articles & book chapters:

  1. Ming Tian, Cang Min Ma, Tao Lin, Jian Ping Liu, Devki N. Talwar, Yang Hui, Jia Bin Wang, Wen Long Niu, Jie Hua Cao, Hong Hui Liu, Ian T. Ferguson, Ling Yu Wan, Zhe Chuan Feng, “Combined experimental and theoretical investigation of carrier recombination dynamics in green LEDs with quantum-dot-like InGaN structures,” Journal of Materials Science, Sept. 2020
  2. 曹洁花,田明,林涛,冯哲川 (CAO Jie-hua, TIAN Ming, LIN Tao, FENG Zhe-chuan), “基于InGaN 量子点的发光二极管载流子复合动力学研究 (Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots),” 光谱学与光谱分析, Vol. 40, no. 9, 2727~2731, Sept. 2020
  3. Yao Liu, Tianyu He, Daihua Chen, Hong Yang, Ian T. Ferguson, Dan Huang, Zhe Chuan Feng, “Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry,” Journal of Alloys and Compounds, Vol. 848, 156631, Aug. 2020
  4. Yaohui Chen, Daihua Chen, Liufang Meng, Lingyu Wan, huilu Yao, Junyi Zhai, Changlai Yuan, Devki N. Talwar, Chuan Feng, “Dielectric and energy storage properties of Bi2O3–B2O3-SiO2 doped Ba0.85Ca0.15Zr0.1Ti0.9O3 lead-free glass-ceramics,” Royal Soc. Open Sci. , Vol. 7, 191822, Aug. 2020
  5. Wei Guo, Li Chen, Houqiang Xu, Yingda Qian, Moher Sheikhi, Jason Hoo, Shiping Guo, Liang Xu, Jianzhe Liu, Feras Alqatari, Xiaohang Li, Kaiyan He, Zhe Chuan Feng, Jichun Ye, “Revealing the surface electronic structures of AlGaN deep ultraviolet multiple-quantum-wellswith lateral polarity domains,” Photonics Research, Vol. 8, No. 6, 812~818, Jun. 2020
  6. Devki N. Talwar, Hao-Hsiung Lin and Zhe Chuan Feng, “Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers,” Materials Science and Engineering B, Vol. 260, 114615, Jun. 2020
  7. Devki N. Talwar, Hao-Hsiung Lin and Zhe Chuan Feng, “Polarization dependent infrared reflectivity studies in Si-doped MOCVD grown GaN/Sapphire epilayers,” Materials Chemistry and Physics, Vol. 252, 123279, Jun. 2020
  8. Cang Min Ma, Ming Tian, Peng Li, Jun Sen Mo, Wen Long Niu, Tao Lin, Zhe Chuan Feng, “A New Theoretical Model on Recombination Dynamics of Polar InGaN/GaN MQW LED and Internal Quantum Efficiency measurement,” Semiconductor Science & Technology, Vol. 35, no. 5, 055011, Mar. 2020
  9. Shuai Chen, Xiong Zhang, Aijie Fan, Hu Chen, Cheng Li, Zhe Chuan Feng, Jiadong Lyu, Zhe Zhuang, Guohua Hu, Yiping Cui, “Characterization of optical properties and thermo-optic effect for non-polar AlGaN thin films using spectroscopic ellipsometry,” Journal of Physics D: Applied Physics, Vol. 53, 205104, Mar. 2020
  10. Xian Chen, Wenlong Niu, Lingyu Wan, Changtai Xia, Huiyuan Cui, Zhe Chuan Feng, “Structure and temperature-dependence of Raman Scattering Properties of beta-(AlxGa1-x)2O3 crystals,” Superlattices and Microstructures, Vol. 140, 106469, Feb. 2020
  11. Jianguo Zhao, Xiong Zhang, Aijie Fan, Shuai Chen, Jaiqi He, Ming Tian, Jiangyong Pan, Daihua Chen, Zhe Chuan Feng, Jianhua Chang, Qingquan Liu, Junxiang Ge, “Effects of in-situ SiNx interlayer on surface morphology and optical properties for nonpolar a-plane GaN epilayers,” Japanese Journal of Applied Physics, Vol. 59, 010909, Jan. 2020
  12. Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen,Zhechuan Feng, Leiying Ying, Zhiwei Zheng and Baoping Zhang, “Polariton lasing in InGaN quantum wells at room temperature,” Opto-Electronic Advances, Vol. 2, 190014, Dec. 2019
  13. Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, and Dabing Li, “Influence of dislocations on the refractive index of AlN by Nanoscale Strain Field,” Nanoscale Research Letters, 14, 184_1~184_2, May 2019
  14. Xiwen Lin, Daihua Chen, Wenlong Niu, Chiung-Yi Huang, Ray Hua Horng, Li-Chung Cheng, Devki N. Talwar, Hao Hsiung Lin, Jyh-Fu Lee, Zhe Chuan Feng and Lingyu Wan, “The local structure and crystal phase evolution of ZnGaO thin Films grown by metal organic chemical vapor deposition,” Journal of Crystal Growth, 520, 89~95, May 2019
  15. Hong Yang, Yao Liu, Xuguang Luo, Yao Li, Dong-Sing Wuu, Kaiyan He, and Zhe Chuan Feng, “Growth Temperature and Thickness Effects on Material Properties of Ga2O3 Films Grown by Pulsed Laser Deposition,” Superlattices and Microstructures, May 2019
  16. Jiaxi Wang, Li Luo, Chunlong Han, Rui Yun, Xiaofen Li, Xingui Tang, Yanjuan Zhu, Zhaogang Nie, Weiren Zhao, Zhe Chuan Feng, “The microstructure, ferroelectric, optical and photovoltaic properties of BiFeO3 thin films prepared by low temperature sol-gel method,” Materials, 12, 1444_1~1444_10, May 2019
  17. Hong Yang, Yingda Qian, Chi Zhang, Dong-Sing Wuu, Devki N. Talwar, Hao-Hsiung Lin, Jyh-Fu Lee, Lingyu Wan, Kaiyan He, and Zhe Chuan Feng, “Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition,” Applied Surface Science, 479, 1246~1253, Feb. 2019
  18. Yuanlan Liang, Xuguang Luo, Qingxuan Li, Tao Lin, Ian Ferguson, Qingyi Yang, Lingyu Wan, and Zhe Chuan Feng, “Optical Properties of InSb Thin Films Grown on GaAs investigated by temperature-dependent spectroscopic ellipsometry,” Journal of Applied Spectroscopy, 86, 257~264, Feb. 2019
  19. Hanling Long, Jiangnan Dai, Yi Zhang, Shuai Wang, Bo Tan, Shuang Zhang, Linlin Xu, Maocheng Shan, Zhe Chuan Feng, Hao-Chung Kuo, Changqing Chen, “High quality 10.6 μm AlN grown on pyramidal nano-patterned sapphire substrate by MOCVD,” Applied Physics Letters, 114, 042101-1~042101-6, Jan. 2019
  20. Qile Wang, Jian Chen, Hao Lu, Pan Huang, Jiabin Wang, Mingkai Li, Yinmei Lu, Gang Chang, Zhe Chuan Feng, Yunbin He, “Structures, compositions, and optical properties of ZnCr2O4 films grown epitaxially on c-sapphire by pulsed laser deposition,” Applied Surface Science, 475, 820~827, Jan. 2019
  21. Jiaqi He, Xiong Zhang, Jianguo Zhao, Shuai Chen, Zili Wu, Aijie Fan, Youhua Zhu, Meiyu Wang, Zhe Chuan Feng, Guohua Hu, Yiping Cui, “Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-planeAl0.34Ga0.66N films,” Materials Science in Semiconductor Processing, 90, 219~224, Jan. 2019
  22. Chi Zhang, Yao Li, Yuanlan Liang, Devki N Talwar, Shih-Yung Huang, Qingxuan Li, Fangze Wang, Lingyu Wan, Daniel Seidlitz, Nikolaus Dietz, Dong-Sing Wuu, Kaiyan He, Zhe Chuan Feng, “Surface and optical properties of In-rich InGaN layers grown on sapphire by migration-enhanced plasma assisted metal organic chemical vapor deposition,” Materials Research Express, 6, 016407-1~016407-13, Jan. 2019
  23. Ming Tian, Yingda Qian, Chi Zhang, Lin Li, Shude Yao, Ian T. Ferguson, Devki N. Talwar, Junyi Zhai, Dehuan Meng, Kaiyan He, Lingyu Wan, Zhe Chuan Feng, “Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition,” Optical Materials Express, 8, 3184_1~3184_13, Oct. 2018
  24. Jianguo Zhao, Xiong Zhang, hjq, Jiaqi He, Aljie Fan, Shuai Chen, Zili Wu, Youhua Zhu, Meiyu Wang, Zhe Chuan Feng, Yiping Cui, “Improved optical and structural properties of nonpolar a-plane AlGaN epi-layers after Cp2Mg and NH3 treatments,” Optical Materials Express, 8, 2586~2591, Sept. 2018
  25. Tao Lin, Zhi Yan Zhou, Yao Min Huang, Kun Yang, Bai Jun Zhang, Zhe Chuan Feng, “Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates,” Nanoscale Research Letters, 13, 243_1~243_7, Aug. 2018
  26. Devki N. Talwar, P. Becla, Hao-Hsiung Lin, Zhe Chuan Feng, “Optical and structural characteristics of Bridgman grown cubic Zn1-xMnxTe alloys,” Materials Chemistry and Physics, 220, 460~468, Jul. 2018
  27. Devki N. Talwar, Lingyu Wan, Chin-Che Tin, Hao-Hsiung Lin and Zhe Chuan Feng, “Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms,” Applied Surface Science, Vol. 427, 302-310, Jul. 2018
  28. Yao Li, Chi Zhang, Xuguang Luo, Yuanlan Liang, Dong-Sing Wuu, Chin-Che Tin, Xiang Lu, Kaiyan He, Lingyu Wan, Zhe Chuan Feng, “Surface, Structural and Optical Properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition,” Applied Surface Science, 458, 972~977, Jul. 2018
  29. Honghui Liu, Tao Lin, Lingyu Wan, Gu Xu, Zhe Chuan Feng, Hao-Chung Kuo, “Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study, “Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study,” Materials Research Express, 5, 086201_1~086201_10, Jul. 2018
  30. ZHAO Di-shu, WANG Fang-ze, WAN Ling-yu, YANGQing-yi, FENG Zhe Chuan, “Raman scattering study on anisotropic property in wurtzite 4H-SiC,” Journal of Light Scattering (光散射学报), 30, 37~42, Jun. 2018
  31. Xuguang Luo, Yuanlan Liang, Hong Yang, Yuanlan Liang, Kaiyan He, Wenhong Sun, Hao-Hsiung Lin, Shude Yao, Xiang Lu, Lingyu Wan, Zhe Chuan Feng, “Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry,” Crystals, Vol. 8, 248__1-16, Jun. 2018
  32. Tao Lin, Fang Zhe Wang, Chih-Hsien Cheng, Shuai Chen, Zhe Chuan Feng, Gong-Ru Lin, “Recombination Mechanisms in Polar InGaN/GaN MQWs on Amorphous SiC,” Optical Materials Express, Vol. 8, 1100-1106, May 2018
  33. Jianguo Zhao, Xiong Zhang, Jiaqi He, Shuai Chen, Qian Dai, Zili Wu, Abbas Nasir, Nan Wang, Zhe Chuan Feng, and Yiping Cui, “High internal quantum efficiency of non-polar a-plane AlGaN-based multiple quantum wells grown on r-plane sapphire substrate,” ACS Photonics, Vol. 5, 1503-1507, Apr. 2018
  34. He, Ju; Wang, Shuai; Chen, Jingwen; Dai, Jiangnan; Long, Hanling; Zhang, Yi; zhang, wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing, “Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer,” Nanotechnology, Vol. 29, 195203, Mar. 2018
  35. Hanling Long, Shuai Wang, Feng Wu, Jun Zhang, Jingwen Chen, Renli Liang, Zhe Chuan Feng, Jiangnan Dai, and Changqing Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Optics Express, Vol. 26, no.2, 680-686, Feb. 2018
  36. Zili Wu, Xiong Zhang, Aijie Fan, Qian Dai, Jianguo Zhao, Shuai Chen, Zhe Chuan Feng, and Yiping Cui, “Enhanced hole concentration in nonpolar a-plane p-AlGaN film with multiple-step rapid thermal annealing technique,” Journal of Physics D: Applied Physics, Vol. 51, 095101, Feb. 2018
  37. Lingyu Wan, Dishu Zhao, Fangzhe Wang, Gu Xu, Chin-Che Tin, Tao Lin, Zhaochi Feng and Zhe Chuan Feng, “Efficient quality analysis of homo-epitaxial 4H-SiC thin films by the forbidden Raman Scattering Mode,” Optical Materials Express, Vol. 8~119-127, Jan. 2018
  38. Jingwen Chen, Jun Zhang, Jiangnan Dai, Feng Wu, Shuai Wang, Hanling Long, Renli Liang, Jin Xu, Changqing Chen, Zhiwu Tang, Yunbin He, Mingkai Li, Zhe Chuan Feng, “Significant anisotropic optical properties of heteroepitaxial strained nonpolar a-plane ZnO layers grown on AlxGa1-xN templates,” Optical Materials Express, Vol. 7, no.11, 3944-3951, Oct. 2017
  39. Jianguo Zhao, Xiong Zhang, Zili Wu, Qian Dai, Nan Wang, Jiaqi He, Shuai Chen, Zhe Chuan Feng, and Yiping Cui, “Reduction in anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” Journal of Alloys and Compounds, Vol. 749, 992-996, Sept. 2017
  40. LIN Shu-Yu, WU Feng, CHEN Chang-Qing, LIANG Yi, WAN Ling-Yu, and Zhe Chuan FENG, “Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films,” Journal of Infrared & minimeter wave, Vol. 36, no.3, 269-273, Jun. 2017
  41. Y Liu, E Ghafari, X Jiang, Y Feng, ZC Feng, I Ferguson, N Lu, “Temperature-dependent Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry,” MRS Advances, Vol. 2, no.5, 323-328, Apr. 2017
  42. Shuai Chen, Qingxuan Li, Ian Ferguson, Tao Lin, Lingyu Wan, Zhe Chuan Feng, Liping Zhu, Zhizhen Ye, “Spectroscopic Ellipsometry Studies on ZnCdO Thin Films with Different Cd Concentrations Grown by Pulsed Laser Deposition,” Applied Surface Science, Vol. 421, Mar. 2017
  43. Deng Xie, Zhi Ren Qiu, Shiyuan Liu, Ting Mei, Zhe Chuan Feng, “Combining Spectroscopic Ellipsometry and X-ray Diffraction Study on a series of Si1-xGex film and superlattice sandwiched by Si,” Applied Surface Science, Vol. 421, 748-754, Mar. 2017
  44. Feng Wu, Haiding Sun, Idris A. Ajia, Iman S. Roqan, Daliang Zhang, Jiangnan Dai, Changqing Chen, Zhe Chuan Feng, and Xiaohang Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” Journal of Physics D: Applied Physics, Vol. 50, 245101, Mar. 2017
  45. Zhe Chuan Feng, Qingxuan Li, Lingyu Wan, Gu Xu, “Variation of phonon coupling factors in the photoluminescence of Cadmium Telluride by variable excitation power,” Optical Materials Express, Vol. 7, 808~816, Mar. 2017
  46. Yao Liu, Qing Xuan Li, Ling Yu Wan, Bahadir Kucukgok, Ian T. Ferguson, Xiong Zhang, Zhe Chuan Feng, Na Lu, “Temperature-Dependent Optical and Structure Properties of AlxGa1-xN by Spectroscopic Ellipsometry,” Applied Surface Science, Vol. 421, 389-396, Feb. 2017
  47. Deng Xie, Zhi Ren Qiu, Yao Liu, Devki N Talwar, Lingyu Wan, Xiong Zhang, Ting Mei, Ian T Ferguson and Zhe Chuan Feng, “Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films,” Materials Research Express, Vol. 4, 025903, Feb. 2017
  48. Gu Xu, Guizi Li, Shuaiya Li, Zhe Chuan Feng, “Non-patchy strategy for inter-atomic distances from Extended X-ray Absorption Fine Structure,” Scientific Report, Vol. 7, 42143-1~42143-7, Feb. 2017
  49. Tao Lin, Hao Chung Kuo, Xiao Dong Jiang, Zhe Chuan Feng, “Recombination Pathways in Green InGaN/GaN multiple quantum wells,” Nanoscale Research Letters, Vol. 12, 137-1~137-6, Feb. 2017
  50. Shuai Chen, Xiaodong Jiang, Chin-Che Tin, Lingyu Wan, Zhe Chuan Feng, “Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths,” J. Phys. D: Applied Physics, Vol. 50, 115102-1~115102-6, Feb. 2017
  51. Shuchang Wang, Xiong Zhang, Qian Dai, Wenhua Guo, Fangqiang Li, Jinfu Feng, Zhe Chuan Feng, Yiping Cui, “An x-ray diffraction and Raman spectroscopy investigation of AlGaN epi-layers with high Al composition,” Optik - International Journal for Light and Electron Optics, Vol. 131, 201~206, Feb. 2017
  52. Qing-Xuan LI, Yu-Jia LIU, Yao Liu, Yi Liang, Hao-Hsiung LIN, Zyh-Fu Lee, Na Lu, Ian T. Ferguson, Ling-Yu WAN, Zhe Chuan Feng, “GaN Films under Different Growth Mechanisms Studied by Synchrotron X-ray Absorption Spectroscopy,” Proceedings of 2nd Annual International Conference on Advanced Material Engineering (AME 2016), the series AER, Vol. 85, 1003~1007, Nov. 2016
  53. Hanling Long, Feng Wu, Jun Zhang, Shuai Wang, Jingwen Chen, Chong Zhao, Zhe Chuan Feng, Jintong Xu, Xiangyang Li, Jiangnan Dai, Changqing Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1-xN templates,” J. Phys. D: Applied Physics, Vol. 49, 415103-1~415103-6, Sept. 2016
  54. Deng Xie, Zhi Ren Qiu, Lingyu Wan, Chin-Che Tin, Ting Mei, Zhe Chuan Feng, “Characterization of Optical Properties of Wide Band Gap Semiconductor Thin Film with the Combination of Ellipsometry and Infrared Spectrum,” Journal of Light Scattering (光散射学报), Vol. 28, 214~219, Sept. 2016
  55. Zili Wu, Xiong Zhang, Tianhui Liang, Zhe Chuan Feng, Yiping Cu, “Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers,” Superlattices and Microstructures, Vol. 98, 181~186, Aug. 2016
  56. Shuai Chen, Deng Xie, Zhi Ren Qiu, Chin-Che Tin, Hong Chao Wang, Ting Mei, Lingyu Wan, and Zhe Chuan Feng, “Raman Scattering Studies on CVD grown cubic SiC Thin Films on Si,” Journal of Light Scattering (光散射学报), Vol. 38, 125~130, Jun. 2016
  57. Tao Lin, Zhi Ren Qiu, Jer-Ren Yang, Long Wei Ding, Yihua Gao, Zhe Chuan Feng, “Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells,” Materials Letters, Vol.173, 170~173, Mar. 2016
  58. Xin Xin, Yu-Ming Zhang, Hong-Ming Wu, Zhe Chuan Feng, Hao-Hsiung Lin, Ren-Xu Jia, “Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy,” J. Vac. Sci. Tech. A, Vol. 34, 031104-1~031104-6, Feb. 2016
  59. Fanming Zeng, Lihong Zhu, Wei Liu, Xiaoying Li, Weicui Liu, Bo-Jhih Chen, Yueh-Chien Lee, Zhe Chuan Feng, Baolin Liu, “Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy,” Journal of Alloys and Compounds, Vol.656, 881~886, Jan. 2016
  60. Feng Wu, Jun Zhang, Shuai Wang, Hanling Long, Jiangnan Dai, Zhe Chuan Feng, Zheng Gong, Changqing Chen, “Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence,” Optical Materials Express, Vol. 5, No. 11, 246280-1~246280-8, Oct. 2015
  61. Bahadir Kucukgok, Na Lu, Ian T. Ferguson, Shu Chang Wang, Xiong Zhang and Zhe Chuan Feng, “Structural and optical analyses of AlxGa1−xN thin films grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., 54, 02BA05-1~02BA05-5, Feb. 2015
  62. WANG Hong-Chao, HE Yi-Ting, SUN Hua-Yang, QIU Zhi-Ren, XIE Deng, MEI Ting, Tin C. C., FENG Zhe-Chuan, “Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions,” CHIN.PHYS.LETT., 32, 047801-1~047801-5, Feb. 2015
  63. Deng Xie, Zhi Ren Qiu, Devki N. Talwar, Yi Liu, Jen-Hao Song, Jow-Lay Huang, Ting Mei, Chee Wee Liu and Zhe Chuan Feng, “Investigation of Optical Parameters of Boron Doped Aluminum Nitride Films Grown on Diamond Using Spectroscopic Ellipsometery,” International Journal of Nano Technologies,, Jan. 2015
  64. xiaodong Jiang,Li Lei,QiWei Hu,Zhe Chuan Feng,DuanWei He, “High-pressure Raman spectroscopy of Re3N crystals,” Solid State Communications, 201(2015), 107-110, Jan. 2015
  65. Shuchang Wang, Xiong Zhang, Muchi Liu, Bowei Wang, Zhe Chuan Feng, Yiping Cui, “Study of lattice deformation and atomic bond length for AlxGa1−xN epi-layers with synchrotron radiation X-ray absorption spectroscopy,” J Mater Sci: Mater Electron, 25, 4800–4805, Aug. 2014
  66. Yi Ting He, Xiao Yan Lei, Zhi Ren Qiu, Bao Ping Zhang, Na Lu, Ian T. Ferguson, and Zhe Chuan Feng, “The characteristics of optical pumped GaN-based vertical cavity surface emitting laser structures,” Advanced Mechanics and Materials, 692, 187-190, Aug. 2014
  67. C. G. Jin, Y. Yang, Z. F. Wu, L. J. Zhuge, Q. Han, X. M. Wu, Y. Y. Lian Z. C. Feng, “Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering,” J. Mater. Chem. C, 2, 2992-7 (2014)., Jul. 2014
  68. Shuchang Wang, Xiong Zhang, Zhe Chuan Feng and Yiping Cui, “Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD,” Optics Express, 22, 17440-7, Jul. 2014
  69. Devki N. Talwar, Ying Chieh Liao, Li Chyong Chen, Kuei Hsien Chen and Zhe Chuan Feng, “Optical Properties of Plasma-Assisted Molecular Beam Epitaxy Grown InN/Sapphire,” Optical Materials, May 2014
  70. Hao Long, Songzhan Li, Xiaoming Mo, Haoning Wang, Zhao Chen, Zhe Chuan Feng, and Guojia Fang, “Enhanced electroluminescence using Ta2O5/ZnO/HfO2 asymmetric double heterostructure in ZnO/GaN-based light emitting diodes,” Optics Express, Vol. 22, A833 (p.1-9), Apr. 2014
  71. Lingmin Kong, Zhe Chuan Feng, Shusheng Zhang, Sheng Xie, Yunqing Zhou, Rui Wang, Cunxi Zhang, Zhaocun Zong, Hongxia Wang, Qian Qiao, Zhengyun Wu, “Effects of InAlAs strain reducing layer to photoluminescence properties of InAs quantum dots in InGaAs/GaAs quantum well,” Thin Solid Films, http://dx.doi.org/10.1016/j.tsf., Apr. 2014
  72. Zhi Li, Junjie Kang, Bo Wei Wang, Hongjian Li, Yu Hsiang Weng, Yueh-Chien Lee, Zhiqiang Liu, Xiaoyan Yi, Zhe Chuan Feng, and Guohong Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells,” Journal of Applied Physics, Vol. 115, 083112 (p.1-6), Feb. 2014
  73. Wei Zheng, Hao-Hsiung Lin, Zhe Chuan Feng, Fan-Hsiu Chang, Jyh-Fu Lee, Chee Wee Liu, Dong-Sing Wuu, and Rui Sheng Zheng, “Lattice deformation of wurtzite MgxZn1−xO alloys: An extended X-ray absorption fine structure study,” Journal of Alloys and Compounds, 582, 157-160, Jan. 2014
  74. S.Y. Hu, Y.C. Lee, Y.H. Weng, I.T. Ferguson, Z.C. Feng, “Characterization of temperature-dependent photoluminescence properties of InAlGaN quaternary alloys,” Journal of Alloys and Compounds, 587, 154-157, Jan. 2014
  75. Devki Talwar, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, “Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd1-xZnxTe ternary alloys,” Materials Research Express, Vol. 1, 015018 (p.1-13), Jan. 2014
  76. Lihong Zhu, Fanming Zeng, Wei Liu, Zhechuan Feng, Baolin Liu, Yijun Lu, Yulin Gao, and Zhong Chen, “Improved Quantum Efficiency in Semipolar (1ˉ101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth,” IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, No.11, 3753-9, Nov. 2013
  77. T.Y. Wua, C.C. Chang, K.K. Tiong, Y.C. Lee, S.Y. Hu, L.Y. Lin, T.Y. Lin, Z.C. Feng, “Luminescence studies in InxGa1-xN epitaxial layers with different indium contents,” Optical Materials, 35, 3753-3759, Nov. 2013
  78. Hua Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Hong Chao Wang, Ting Mei, Chee Wee Liu, and Zhe Chuan Feng,, “Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration,” Optics Express, 21, 26475–26482, Oct. 2013
  79. Wei Liu, Li-Hong Zhu, Fan-Ming Zeng, Ling Zhang, Wei-Cui Liu, Xiao-Ying Li, Bao-Lin Liu, and Zhe-Chuan Feng, “Influence of GaN Barrier Thickness on Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells,” Applied Physics Express, 6, 081001, 1-5, Jul. 2013
  80. Wei Zheng, Ling-Yun Jang, Jenn-min Lee, Rui Sheng Zheng, Chee Wee Liu, P. Becla, and Zhe Chuan Feng, “Manganese K- and L3-edge X-ray Absorption Fine Structure Study of Zn1-xMnxTe,” Advanced Materials Research, 634-638, 2489-2492, Jun. 2013
  81. Xiang Ping Shu, Andrew Melton, Zhi Ren Qiu, lan T. Ferguson, and Zhe Chuan Feng, “Optical probe in gadolinium doped GaN by metalorganic Chemical Vapor deposition,” Applied Mechanics and Materials, 329, 109-113, Jun. 2013
  82. Hua Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Zhe Chuan Feng, “Temperature dependence of Raman scattering in 4H-SiC,” Mat. Sci. Forum, 740-702, 443-446, May 2013
  83. Devki N. Talwar, Zhe Chuan Feng, Jyh-Fu Lee, Petre Becla, “Structural and dynamical properties of Bridgeman grown CdSexTe1-x (0 < x ≤ 0.35) ternary alloys,” Phys. Rev. B, 87, 165208, Apr. 2013
  84. C.G. Jin, T. Yu, Y. Yang, Z.F. Wu, L.J. Zhuge, X.M. Wu, Z.C. Feng, “Ferromagnetic and photoluminescence properties of Cu-doped ZnO nanorods by radio frequency magnetron sputtering,” Mat. Chem. Phys., 139, 506-510, Mar. 2013
  85. T. Yu, C.G. Jin, H.Y. Zhang, L.J. Zhuge, Z.F. Wu, X.M. Wu, Z.C. Feng, “Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1-xTaxO high-k film prepared by dual ion beam sputtering deposition,” Vacuum, 92, 58-64, Mar. 2013
  86. Cheng Chen, Xiang Ping Shu, Hua Yang Sun, Zhi Ren Qiu, Ting-Wei Liang, Li-Wei Tu, and Zhe Chuan Feng, “Temperature dependence of Raman scattering in m-plane GaN with varying III/V ratios,” Advanced Materials Research, 602-604, 1453-1456, Mar. 2013
  87. Devki N. Talwar, T. R. Yang, Hao-Hsiung, Zhe Chuan Feng, “Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP(001),” Appl. Phys. Lett., 102, 052110, Feb. 2013
  88. Wei Zheng, Zhe Chuan Feng, Fan-Hsiu Chang, Jyh-Fu Lee, Rui Sheng Zheng, Dong-Sing Wuu, and Chee Wee Liu, “Study of MgXZn1-XO alloys by X-ray absorption spectroscopy,” Advanced Materials Research, 663, 361-365, Feb. 2013
  89. Wei Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Ling-Yun Jang and Chee Wei Liu, “3C-, 4H- and 6H-SiC bulks studied by Si K-edge X-ray absorption,” Mat. Sci. Forum, 740-742, 573-576, Feb. 2013
  90. Wei Zheng, Yu Li Wu, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, and Rui Sheng Zheng, “Determination of bond lengths and electronic structure of Cd1-xZnxTe ternary alloys by synchrotron radiation,” Adv. Mat. Res., 706-708, 56-59, Feb. 2013
  91. Cheng Chen, Zhi Ren Qiu, Xiang Ping Shu, Zeng Cheng Li, Jian Ping Liu, and Zhe Chuan Feng, “Temperature and time-resolved dependence of photoluminescence in InGaN quantum dots,” Advanced Materials Research, 750-752, 927-930, Feb. 2013
  92. Wei Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Hao-Hsiung Lin, Xin Qiang Wang, Ting-Shan Chan, Ling-Yun Jang, and Chee Wee Liu, “Study of high indium InxGa1-xN alloys with synchrotron radiation,” TELKOMNIKA (Indonesia Journal of Electrical Engineering), 11, 906-912, Feb. 2013
  93. Z.C. Feng, T.W. Kuo, L.H. Zhu, C.Y. Wu, H.L. Tsai, B.L. Liu, and J.R. Yang, “Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition,” Thin Solid Films, 529, 269-274, Jan. 2013
  94. Lei Liu, LeiWang, Cimang Lu, Ding Li, Ningyang Liu, Lei Li,‧Wei Yang, Wenyu Cao,‧Weihua Chen,‧Weimin Du, Xiaodong Hu, Zhe Chuan Feng, Wei Huang, Yueh-Chien Lee, “Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer,” Applied Physics A, 108, 771-776, Oct. 2012
  95. Devki N. Talwar, Zhe Chuan Feng and Tzuen-Rong Yang, “Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors,” Physical Review B, 85, 195203, Oct. 2012
  96. Devki N. Talwar, Zhe Chuan Feng, Chee Wee Liu and Chin-Che Tin, “Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers,” Semiconductor Science & Technology, 27, 115019 (13pp), Oct. 2012
  97. Lei Liu, Lei Wang, Ningyang Liu, Wei Yang, Ding Li, Weihua Chen, Zhe Chuan Feng, Yueh-Chien Lee, Ian Ferguson, and Xiaodong Hu, “Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes,” Journal of Applied Physics, 112, 083101 (8pp), Oct. 2012
  98. S. Y. Hu, Y. C. Lee, Z. C. Feng and Y. H. Weng,, “Raman spectra investigation of InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition,” Joural of Applied Physics, 112, 063111, Sept. 2012
  99. H.C. Hsu, G.M. Hsu, Y.S. Lai, Z.C. Feng, A. Lundskog, U. Forsberg, E. Janzén, K.H. Chen, L.C. Chen, “Polarized and diameter-dependent Raman scattering from individual AlN nanowires: the antenna and cavity effects,” Applied Physics Letters, 101, 121902, Sept. 2012
  100. Chen-Jun Wu, Zhe Chuan Feng, Wen-Ming Chang, Chih-Chung Yang, and Hao-Hsiung Lin, “Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs,” Applied. Physics. Letters, 101, 091902, Aug. 2012
  101. C. R. Ding, Z. L. Li, Z. R. Qiu, Z. C. Feng, and P. Becla, “Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.2Te:In crystal,” Applied. Physics. Letters, 101, 091115, Aug. 2012
  102. Zhe Chuan Feng, Cheng Chen, Qiang Xu, Suwan P. Mendis, Ling-Yun Jang, Chin-Che Tin, Kung-Yen Lee, Chee Wee Liu, Zhengyun Wu, and Zhi Ren Qiu, “Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si,” Materials Science Forum, 717-720, 505-508, May 2012
  103. Qiang Xu, Hua Yang Sun, Cheng Chen, Ling-Yun Jang, RUSLI, Suwan P. Mendis, Chin Che Tin, Zhi Ren Qiu, Zhengyun Wu, Chee Wee Liu, and Zhe Chuan Feng, “4H-SiC wafers studied by X-ray absorption and Raman scattering,” Materials Science Forum, Materials Science Forum, 509-512, May 2012
  104. Sin-Liang Ou, Dong-Sing Wuu, Yu-Chuan Fu, Shu-Ping Liu, Ray-Hua Horng, Lei Liu, Zhe-Chuan Feng, “Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition,” Materials Chemistry and Physics, 133, 700-705, Jan. 2012
  105. S.Y. Hu, Y.C. Lee, Z.C. Feng, S.H. Yang, “Investigation of defect-related optical properties in AlxInyGa1-x-yN quaternary alloys with different Al/In ratios,” Journal of Luminescence, 132, 1037–1040, 2012
  106. Yu-Li Tu, Yan-Hao Huang, Lingmin Kong, Kung-Yen Lee, Ling-Yun Jang, Chin-Che Tin, Chee-Wee Liu , Zhe Chuan Feng, “Synchrotron Radiation X-ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition,” Advanced Materials Research, 306-7, 167-170, Aug. 2011
  107. Ting-Wei Kuo, Lingmin Kong, Zhe Chuan Feng, Wei Liu, Soo Jin Chua, Y.-S. Huang, Dong-Sing Wuu,, “Luminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition,” Advanced Materials Research, 306-7, 1133-7, Aug. 2011
  108. Yee Ling Chung, Xingyu Peng, Ying Chieh Liao, Shude Yao, Li Chyong Chen, Kuei Hsien Chen, Zhe Chuan Feng, “Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy,” Thin Solid Films, 519, 6778–6782, May 2011
  109. F. Cheng, Tao Fa, Shude Yao, Chen-Jun Wu, Hao-Hsiung Lin, Zhe Chuan Feng, “Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction,” Physica B, 406, 3219–3221, May 2011
  110. Lianshan Wang, Zhiqin Lu, Sheng Liu, Zhe Chuan Feng, “Shallow–Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN,” J. Electronic, 40, 1572-7, Apr. 2011
  111. Lei Liu, Lei Wang, Ding Li, Ningyang Liu, Lei Li, Wenyu Cao, Wei Yang, Chenghao Wan, Weihua Chen, Xiaodong Hu, and Zhe Chuan Feng, “Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures,” Journal of Applied Physics, 109, 073106-1-5, Apr. 2011
  112. Z. S. Lee, L. M. Kong, Z. C. Feng, A. G. Li, H. L. Tsai , J. R. Yang, “Luminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes,” Advanced Materials Research, 216, 445-9, Mar. 2011
  113. Dongsheng Peng, Ke Jin, Ruisheng Zheng, Lei Liu, Zhechuan Feng, “Comparative Study of GaN—Based LED Grown on Different Substrates,” Advanced Materials Research, 194-196, 2241-4, Feb. 2011
  114. Sheng-Yao Hu, Yueh-Chien Lee, Zhe Chuan Feng, Shi-Hong Yang, “Anomalous luminescence behavior in the InAlGaN thin film,” Journal of Alloys and Compounds, Vol. 509, 2300-2303, Feb. 2011
  115. Tzuen-Rong Yang, Sheng-Hong Jhang, Yen-Hao Shih, Wan-Ni Cheng, Fu-Chung Hou, Yu-Chang Yang, P. Becla, Der-Chi Tien, and Zhe-Chuan Feng, “Study of Optical and Transport Properties of Cd1-xZnxTe and CdSexTe1-x by Far-IR Reflectance Spectra,” Chinese Journal of Physics, 49, NO. 1, P. 239-249, Feb. 2011
  116. C.C. Wu, D.S. Wuu, P.R. Lin, T.N. Chen, R.H. Horng, S.L. Ou, Y.L. Tu, C.C. Wei, Z.C. Feng, “Characterization of MgxZn1−xO thin films grown on sapphire substrates by metalorganic chemical vapor deposition,” Thin Solid Films, Vol. 519, 1966-1970, Jan. 2011
  117. Jinliang Ding, Yaochuan Wang, Hui Zhou, Qiang Chen, Shixiong Qian, Zhe Chuan Feng, “Nonlinear optical properties and ultrafast dynamics of undoped and doped bulk SiC,” Chinese Physics Letters, Vol. 27, No. 12, 124202-1-4, Dec. 2010
  118. Weifeng Yang, Zhengyun Wu, Zhuguang Liu, Aisuo Pang, Yu-Li Tu, Zhe Chuan Feng, “Room Temperature Deposition of Al-Doped ZnO Films on Quartz Substrates by Radio-Frequency Magnetron Sputtering and Effects of Thermal Annealing,” Thin Solid Films, 519, 31-36, Jul. 2010
  119. Y. L. Wu, Z. C. Feng, J.-F. Lee, W. Tong, B. K. Wagner, I. Ferguson, “X-ray absorption and Raman study of GaN films grown on different substrates by different techniques,” Thin Solid Films, 518, 7475-7479, May 2010
  120. Z. C. Feng, C. C. Wei, A. T. S. Wee, A. Rohatgi, Weijie Lu, “Effects of CdCl2 Treatment and Annealing on CdS/SnO2/Glass Heterostructures for Solar Cells,” Thin Solid Films, 518, 7199-7203, May 2010
  121. James Britten, Zhe Chuan Feng and Gu Xu, “Magnified Hard X-ray Image in One dimension,” Applied Physics Letter, 96, 261907-1-3, May 2010
  122. Ching-Lien Hsiao, Jr-Tai Chen, Hsu-Cheng Hsu, Ying-Chieh Liao, Po-Han Tseng, Yen-Ting Chen, Zhe Chuan Feng, Li-Wei Tu, Mitch M. C. Chou, Li-Chyong Chen, Kuei-Hsien Chen, “m-plane (10-10) InN heteroepitaxied on (100)-gama-LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy,” J. Appl. Phys., 107, 073502 (7pp), Apr. 2010
  123. Shih-Yung Huang, Ray-Hua Horng, Yu-Ju Tsai, Po-Rung Lin, Wei-Kai Wang, Zhe Chuan Feng, Dong-Sing Wuu, “Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs,” Semicond. Sci. Technol, 25, 035013 (7pp), Feb. 2010
  124. Yueh-Chien Lee, Sheng-Yao Hu, Zhe Chuan Feng, Chu-Shou Yang, and Chia-Chih Huang, “Dependent Excitonic Luminescence in ZnO Thin Film Grown by Metal Organic Chemical Vapor Deposition,” Japanese Journal of Applied Physics, Vol. 48, 112302-1-3, Nov. 2009
  125. Yueh-Chien Lee, Sheng-Yao Hu, Zhe Chuan Feng, Chu-Shou Yang, and Chia-Chih Huang, “Temperature-Dependent Excitonic Luminescence in ZnO Thin Film Grown by Metal Organic Chemical Vapor Deposition,” Japanese Journal of Applied Physics, Vol. 48, 112302-1-3, Nov. 2009
  126. Yueh-Chien Lee, Sheng-Yao Hu, Walter Water, Kwong-Kau Tiong, Zhe-Chuan Feng, Yen-Ting Chen, Jen-Ching Huang, Jyh-Wei Lee, Chia-Chih Huang, Jyi-Lai Shen, Mou-Hong Cheng, “Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates,” Journal of Luminescence, 129, 148-152, Feb. 2009
  127. H.C. Lin, Z.C. Feng, M.S. Chen, Z.X. Shen, I.T. Ferguson, W. Lu, “Raman Scattering Study on Anisotropic Property of Wurtzite GaN,” Journal of Applied Physics, 105, 036102-4, Jan. 2009
  128. Lingmin Kong, Zhe Chuan Feng, Zheng Yun Wu, and Weijie Lu, “Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure,” J. Appl. Phys., 106, 013512, 2009
  129. Nola Li, Shen-Jie Wang, Eun-Hyun Park, Zhe Chuan Feng, Hung-Lin Tsai, Jer-Ren Yang, Adriana Valencia, Jeff Nause & Ian Ferguson, “Suppression of Phase Separation in InGaN layers Grown on Lattice Matched ZnO Substrates,” J. Crystal Growth, 311, 4628-31, 2009
  130. Shen-Jie Wang, Nola Li, Hong Bo Yu, Zhe Chuan Feng, Hung-Lin Tsai, Jer-Ren Yang, Adriana Valencia, Jeff Nause & Ian Ferguson, “Metalorganic chemical vapor deposition of GaN layers on ZnO substrates using Al2O3 as a transition layer,” J. Phys. D: Appl. Phys., 42, 245302, 2009
  131. Zhe Chuan Feng, Jer-Ren Yang, Alan Gang Li, Ian T. Ferguson, “Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” book III-Nitride Devices and NanoEngineering, Chapter 3, pp57-88, Oct. 2008
  132. Nola Li, Shen-Jie Wang, Chung-Lung Huang, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Christopher Summers and Ian Ferguson, “Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor phase deposition,” Journal of Crystal Growth, Vol. 310, p. 4908-12, Aug. 2008
  133. J. Chen, S. C. Lien, Y. C. Shin, Z. C. Feng, C. H. Kuan, J. H. Zhao and W. J. Lu, “Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer,” Materials Science Forum, Vol. 600-601, 39-42, 2008
  134. Z. C. Feng, C. Tran, I. T. Ferguson and J. H. Zhao, “Material Properties of GaN Films Grown on SiC/SOI Substrate,” Materials Science Forum, Vol.600-601, 1313-1316, 2008
  135. Shen-Jie Wang, Nola Li, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Matthew Kane, Chris Summers, and Ian Ferguson, “MOCVD growth of GaN-based materials on ZnO Substrates,” Physica Status Solidi (c), Vol.5, 1736-1739, 2008
  136. Z. C. Feng, S. C. Lien, J. H. Zhao, X. W. Sun and W. Lu, “Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films,” Thin Solid Film, 516, 5217-5226, 2008
  137. S. Sun, G. S. Tompa, C. Rice, X. W. Sun, Z. S. Lee, S. C. Lien, C. W. Huang, L. C. Cheng and Z. C. Feng, “Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire,” Thin Solid Film, 516, 5572-5277, 2008
  138. Z. C. Feng, F. C. Hou, J. B. Webb, Z. X. Shen, E. Rusli, I. T. Ferguson and W. Lu, “Optical Investigation of GaSb Thin Films Grown on GaAs by Metalorganic Magnetron Sputtering,” Thin Solid Film, 516, 5493-5497, 2008
  139. Ling Min Kong, Zhe Chuan Feng, Zheng Yun Wu and and Weijie Lu, “Emission dynamics of InAs self-assembled quantum dots with different cap layer structures,” Semiconductor Sci. & Technol., 23, 075044-8, 2008
  140. L.M. Kong, Z.Y. Wu, Z.C. Feng and I.T. Ferguson, “Photoluminescence Characteristics of InAs self-assembled Quantum dots in InGaAs/GaAs Quantum well,” J. Appl. Phys., 101, 126101, 2007
  141. S. J. Wang, Nola Li, E. H. Park, Z. C. Feng, A. Valencia, J. Nause and I. T. Ferguson, “Metalorganic Chemical Vapor Deposition of InGaN Layers on ZnO Substrates,” J. Appl. Phys., 102, 106105, 2007
  142. K. Y. Lo, Y. J. Huang, J. Y. Huang, Z. C. Feng, W. E. Fenwick, M. Pan and I. T. Ferguson, “Reflective Second Harmonic Generation from ZnO thin films: A study on the Zn-O bonding,” Appl. Phys. Lett., 90, 161904, 2007
  143. H.L. Tsai, T.Y. Wang, J.R. Yang, C.C. Chuo, J.T. Hsu, Z.C. Feng and M. Shiojiri, “Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers,” Materials Transactions, 48, No. 5, 894-8, 2007
  144. Z.C. Feng, J.W. Yu, K. Li, Y.P. Feng, K.R. Padmanabhan, and T.R. Yang, “Combined optical, surface and nuclear microscopic incestigation of porous silicon formed in HF-acetonitrile,” Surface and Coating Technology, 200, 3254-3260, 2006
  145. Z.C. Feng, A.T.S. Wee and S.Y. Hung, “Properties of the CdTe/InSb Interface Studied by Optical and Surface Analytical Techniques,” Phys. Stat. Sol. (a), 203, 2181-5, 2006
  146. H.C. Lin, Z.C. Feng, M.S. Chen, Z.X. Shen, W. Lu and W.E. Collins, “Anisotropic Properties of GaN Studied by Raman Scattering,” Mat. Sci. Forum, 527-529, 1517-20, 2006
  147. Z.C. Feng, J.W. Yu, J.B. Wang, R. Varatharajan, B. Nemeth, J. Nause, I. Ferguson, W. Lu and W.E. Collins, “Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique,” Mat. Sci. Forum, 527-529, 1567-70, 2006
  148. Z.C. Feng, W.Y. Chang, J. Lin, C.C. Tin, W. Lu and W.E. Collins, “Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition,” Mat. Sci. Forum, 527-529, 695-8, 2006
  149. Z.C. Feng, “Optical Properties of Cubic SiC Grown on Si substrate by Chemical Vapor Deposition,” Microelectronic Engineering, 83, 165-169, 2006
  150. J.H. Chen, Z.C. Feng, J.C. Wang , H.L. Tsai, J.R. Yang, A. Parekh, E. Armour, and P. Faniano, “Study of carrier localization in InGaN/GaN quantum well blue light emitting diode structures,” Journal of Crystal Growth, 287, 354-358, 2006
  151. J.W. Yu, H.C. Lin, Z.C. Feng, L.S. Wang & S.J. Chua, “Control and Improvement of Crystalline Cracking from GaN Thin films grown on Si by Metal-organic Chemical Vapor Deposition,” Thin Solid Films, 498, 108-112, 2006
  152. Z.C. Feng, K. Li, Y.T. Hou, J. Zhao, W. Lu & W.E. Collins, “A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Surface and Coating Technology, 200, 3224-3229, 2006
  153. Z.C. Feng, W. Liu, S.J. Chua, J.W. Yu, C.C. Yang, T.R. Yang & J. Zhao, “Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Thin Solid Films, 498, 118-122, 2006
  154. W. Tong, M. Harris, B.K. Wagner, J.W. Yu, H.C. Lin and Z.C. Feng, “Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates,” Surface and Coating Technology, 200, 3230-3234, 2006
  155. Z.C. Feng , H.C. Lin, W. Lu, W.E. Collins & I. Ferguson, “Surface and optical properties of AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” Thin Solid Films, 498, 167-173, 2006
  156. T.R. Yang, J.B. Wang & Z.C. Feng, “Optical and Transport Properties of InSb Thin Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” Thin Solid Films, 498, 158-162, 2006
  157. J. Zhao, Z.C. Feng, Y.C. Wang, J.C. Deng & G. Xu, “Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering,” Surface and Coating Technology, 200, 3245-3249, 2006
  158. J.H. Chen, Z.C. Feng, H.L. Tsai, J.R. Yang, P. Li, C. Wetzel, T. Detchprohm and J. Nelson, “Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition”,” Thin Solid Films, 498, 123-127, 2006
  159. Z.C. Feng, J.W. Yu, K. Li, Y.P. Feng, K.R. Padmanabhan, and T.R. Yang, “Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile,” Surface and Coating Technology, 200, 3254-3260, 2006
  160. L.M. Kong, J.F. Cai, Z.Y. Wu, Z. Gong, Z.C. Niu & Z.C. Feng, “Time-resolved Photoluminescence Spectra of Self-assembled InAs/GaAs Quantum Dots,” Thin Solid Films, 498, 188-192, 2006
  161. Z.C. Feng, J.W. Yu, J. Zhao, T.R. Yang, R.P.G. Karunasiri, W. Lu and W.E. Collins, “Optical and materials properties of Sandwiched Si/SiGe/Si Heterostructures,” Surface and Coating Technology, 200, 3265-3269, 2006
  162. J. Zhao, J. Chen, Z.C. Feng, J.L. Chen, R. Liu & G. Xu, “Band-gap Blue Shift of InGaAs/InP Multiple Quantum Wells by Different Dielectric Film Coating and Annealing,” Thin Solid Films, 498, 179-182, 2006
  163. Z.C. Feng, J.H. Chen, A.G Li, and L.C. Chen, “Optical Spectroscopic Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diode wafer Grown on Sapphire by Metalorganic chemical Vapor deposition,” J. Physics: Conf. Ser., 28, 42-47, 2006
  164. Z.C. Feng, W. Liu, S.J. Chua, J.H. Chen, C.C. Yang, W. Lu & W.E. Collins, “Recombination Mechanism of InGaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition,” Phys. Stat. Solidi (c), 2, 2377-2380, 2005
  165. Z.C. Feng, Y.J. Sun, L.S. Tan, S.J. Chua, J.W. Yu, J.H. Chen, C.C. Yang, W. Lu & W.E. Collins, “P-type doping in GaN through Be implantation,” Phys. Stat. Solidi (c), 2, 2415-1419, 2005
  166. W. Tong, M. Harris, B.K. Wagner, J.W. Yu, H.C. Lin and Z.C. Feng, “Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates,” Journal of Taiwan Vacuum Society, 18, 100-104, 2005
  167. Z.C. Feng, J.W. Yu, W.Y. Chang and J. Li, “Photoluminescence Spectral Features of CdTe on InSb Grown by Molecular Beam Epitaxy,” Journal of Taiwan Vacuum Society, 18, 55-58, 2005
  168. Z.C. Feng, “Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition,” book"SiC Power Materials-Devices and Application", chapter 8, 209-276, 2004
  169. Y.C. Cheng, C.M. Wu, H.S. Chen, C.C. Yang, Z.C. Feng, G. A. Li, J.R. Yang, A. Rosenauer & K.J. Ma, “Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers,” Applied Physic Letters, 84, 5422-5424, 2004
  170. Z.C. Feng, J.H. Chen, J. Zhao, T.R. Yang & A. Erbil, “Raman scattering of ferroelectric lead lanthanum titanate thin films grown on fused quartz by metalorganic chemical vapor deposition,” Ceramics International, 30, 1561-1564, 2004
  171. D.N. Talwar and Z.C. Feng, “Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by modeling and simulation,” Computational Materials Science, 30, 419-424, 2004
  172. K. Li, Z.C. Feng, C.C. Yang & J. Lin, “Surface Chemical Status of Heteroepitaxial Nitride Films on Sapphire by Metalorganic Chemical Vapor Deposition,” International Journal of Nanoscience, 3, 655-661, 2004
  173. (127) T.R. Yang, M.M. Dvoynenko, Z.C. Feng and H.H. Cheng, “Raman spectroscopy of self-assembled Ge islands on Si,” Europe Physics Journal B, 31, 41-45, 2003
  174. Z.C. Feng,, “Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Optical Engineering, 41, 2022-2031, 2002
  175. Z.C. Feng, T.R. Yang, R. Liu & A.T.S. Wee, “Crystalline phase separation in InGaN layer materials prepared by metalorganic chemical vapor deposition,” Intenational Journal of Modern Physics B, 16, 268-274, 2002
  176. W.Y. Cheng, Z.C. Feng, J. Lin, F. Yan & J.H. Zhao, “Surface and interface properties of ion implanted 4H-SiC,” Intenational Journal of Modern Physics B, 16, 151-158, 2002
  177. Z.C. Feng, F. Yan, W.Y. Chang, J.H. Zhao, & J. Lin, “Optical characterization of ion implanted 4H-SiC,” Mater Sci. Forum, 389-393, 637-650, 2002
  178. W. Chang, Z.C. Feng, J. Lin, R. Liu, A.T.S. Wee, K. Tone & J.h. Zhao, “Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC,” Surf. & Interface Analysis, 33, 500-505, 2002
  179. Z.C. Feng, X. Chang, S.J. Chua, T.R.Yang, J.C. Deng, G. Xu, “Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition,” Thin Solid Films, 409, 15-22, 2002
  180. Z.C. Feng, T.R. Yang, R. Liu & A.T.S. Wee, “Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition,” Materials Science in Semiconductor Processing, 5, 39-43, 2002
  181. T.R. Yang, M.M. Dvoynenko, Y.F. Chang & Z.C. Feng, “Far-IR investigatuon of thin InGaN layers,” Phys. Rev. Latt. B, 324, 268-278, 2002
  182. J.H. Zhao, P. Alexandrov, L. Fursin, Z.C. Feng & M. Weiner, “High performance 1500 V4H-SiC junction barrier Schottky diodes,” Electronics Lett., 38, 1389-90, 2002
  183. I. Ferguson, A. G. Thompson, S. A. Barnett, F. H. Long & Z.C. Feng, “Epitaxial Film Growth and Characterization,” a book chapter, in Thin Films (Vol. 28), Frontiers of Thin Film Technology (pp. 1-69), ed. M. Francombe and C. E. C. Wood, 2001
  184. D.G. Chtchekine, Z.C. Feng, S. J. Chua & G.D. Gilliland, “Temperature-varied photoluminescence and magnetospectroscopy of near-bandedge emissions in GaN,” Phys. Rev. B, 63, 125211-125217, 2001
  185. G. Xu, Z.C. Feng, Z. Popovic, J.Y. Lin & J.J. Vittal, “Nanotube structure revealed by high resolution X-ray diffraction,” Advanced Materials, 13, 264-267, 2001
  186. X. Zhang, Y.T. Hou, Z.C. Feng, “Infrared reflectance study of GaN films grown on Si(001) substrates,” J. Appl. Phys, 89, 6165-6170, 2001
  187. Y. Wang, J. Lin, C.H. Huan, Z.C. Feng & S.J. Chua, “Photoluminescence in hydrogenated amorphous silicon carbide,” Thin Solid Films, 384, 173-176, 2001
  188. Y. Wang, J. Lin, C.H. Huan, Z.C. Feng & S.J. Chua, “Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film,” Diamond and Related Materials, 10, 1268-1272, 2001
  189. Y.P. Guo, J.C. Zheng, A.T.S. Wee, C.H. Huan, K. Li, J.S. Pan, Z.C. Feng & S.J. Chua, “Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix,” Chem. Phys. Lett, 339, 319-322, 2001
  190. Z.C. Feng, W. Wang, S.J. Chua, P. Zhang, K.P.J. Williams & G.D. Pitt, “Raman scattering properties of GaN materials and structures under visible and ultraviolet excitations,” J. of Raman Spectroscopy, 32, 840-846, 2001
  191. W. Chang, J. Lin, W. Zhou, S.J. Chua & Z.C. Feng, “Photoluminescence and photoelectron spectroscopy analysis of InGaAsN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett, 79, 4497-4499, 2001
  192. Z.C. Feng, S.J. Chua, G.A. Evans, J.W. Steeds, K.P.J. Williams & G.D. Pitt, “Micro-Raman and Photoluminescence Study on n-type 6H-SiC,” Materials Science Forum, 353-356, 345-348, 2001
  193. Z.C. Feng, T.R. Yang & Y.T. Hou, “Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates,” Materials Science in Semiconductor Processing, 16, 571-576, 2001
  194. G. Xu and Z.C. Feng,, “Internal atomic distortion and layer roughness of epitaxial SiC thin films studied by short wavelength x-ray diffraction,” Phys. Rev. Lett., 84, 1926-1929, 2000
  195. W.S. Li, Z.X. Shen, Z.C. Feng & S.J. Chua, “Temperature dependence of Raman scattering in the hexagonal gallium nitride,” J. Appl. Phys., 87, 3332-3337, 2000
  196. (101) Y.T. Hou, Z.C. Feng, J. Chen, X. Zhang, S.J. Chua & J.Y. Lin, “Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates,” Solid State Commun., 115, 45-49, 2000
  197. Y. Wang, J. Lin, Z.C. Feng, S.J. Chua & C.H. Huan, “Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si,” Mat. Sci. Forum, 338-342, 325-328, 2000
  198. G. Xu & Z.C. Feng, “High order X-ray diffraction and internal atomic layer roughness of epitaxial SiC thin films,” Mat. Sci. Forum, 338-342, 501-504, 2000
  199. Z.C. Feng, S.J. Chua, Z.X. Shen, K. Tone & J.H. Zhao, “Microscopic probing of Raman scattering and photoluminescence on C-Al ion co-implanted 6H-SiC,” Mat. Sci. Forum, 338-342, 659-662, 2000
  200. (105) I. Ferguson, A. G. Thompson, S. A. Barnett, F. H. Long & Z.C. Feng, “Epitaxial Film Growth and Characterization,” book"Handbook of Thin Film Devices" & "Hetero-Structures for High Performance Devices", Vol. 1, 1-53, 2000
  201. Y.S. Huang, W.D. Sun, L. Malikova, F.H. Pollak, I. Ferguson, H. Hou, Z.C. Feng, T. Ryuan & E.B. Fantner, “Room temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side-doped GaAlAs/InGaAs high electron mobility transistor structure,” Appl. Phys. Lett, 74, 1851-1853, 1999
  202. J.C. Burton, L. Sun, F.H. Long, Z.C. Feng & I. Ferguson, “First- and second-order Raman scattering from semi-insulating 4H-SiC,” Phys. Rev. B, 59, 7282-7284, 1999
  203. Z.C. Feng, E. Armour, I. Ferguson, R.A. Stall, L. Malikova, T. Holden, J.Z. Wan, F.H. Pollak & M. Pavlosky, “Non-destructive assessment of In0.5(Ga1-xAlx)0.5P films grown on GaAs by low pressure metalorganic chemical vapore deposition,” J. Appl. Phys., 85, 3824-3831, 1999
  204. X. Zhang, S. J. Chua, C. Poon, P. Li & Z.C. Feng, “Enhanced optical emission from GaN films grown on a silicon substrate,” Appl. Phys. Lett., 74, 1984-1987, 1999
  205. Z. C. Feng, S. J. Chua, K. Tone & J. H. Zhao, “Recrystallization of C-Al Ion Co-implanted Epitaxial 6H-SiC,” Appl. Phys. Lett., 75, 472-474, 1999
  206. G. Li, S. J. Chua, J.H. Teng, W. Wang, Z.C. Feng, Y.H. Huang & T. Osipowicz, “Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by ropid thermal annealing,” J. Vac. Sci. Technol. B, 17, 1507-1511, 1999
  207. Y.T. Hou, Z.C. Feng, S.J. Chua, M.F. Li, N. Akutsu & K. Matsumoto, “Influence of Si-doping on the characteristics of GaN on sapphire by infrared reflectance,” Appl. Phys. Lett., 75, 3117-3119, 1999
  208. D.G. Chtchekine, Z.C. Feng, G.D. Gilliland, S.J. Chua & D. Wolford, “A donor-hydrogen bound exciton in epitaxial GaN,” Phys. Rev. B, 60, 15980-15984, 1999
  209. T.R. Yang, C.C. Lu, W.C. Chou, Z.C. Feng & S.J. Chua, “Infrared and Raman spectroscopic study of ZnMnSe materials grown by molecular beam epitaxy,” Phys. Rev. B, 60, 16058-16064, 1999
  210. W. Liu, Z.C. Feng, M.F. Li, S.J. Chua, N. Akutsu & K. Matsumoto, "Material properties of GaN grown by MOCVD, “Material properties of GaN grown by MOCVD,” Surface & Interface Analysis, 28, 150-154, 1999
  211. Y.T. Hou, Z.C. Feng, M.F. Li & S.J. Chua, “Characterization of MBE grown Ga1-xAlxAs alloy films by Raman scattering,” Surface & Interface Analysis, 28, 163-165, 1999
  212. Z.C. Feng, Y.T. Hou, S.J. Chua & M.F. Li, “Infrared reflectance studies of GaN epitaxial films on sapphire substrate,” Surface & Interface Analysis, 28, 166-169, 1999
  213. W.S. Li, Z.X. Shen, Z.C. Feng & S.J. Chua, “Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K,” Surface & Interface Analysis, 28, 173-176, 1999
  214. K. Li, A.T.S. Wee, J. Lin, Z.C. Feng & E.W.P. Lau, “Compositional and morphological analysis of InxGa1-xN/GaN epilayers,” Surface & Interface Analysis, 28, 181-185, 1999
  215. Z.C. Feng, Y.T. Hou, M.F. Li, S.J. Chua, W. Wang, and L. Zhu, “Infrared reflectance investigation of un-doped and Si-doped GaN films on sapphire,” Physica Status Solidi (b), 216, 577-580, 1999
  216. X. Zhang, S.J. Chua, Z.C. Feng, J. Chen, and J. Lin, “MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate,” Phys. Stat. Sol. (a), 176, 605-609, 1999
  217. F. Long, M. Pophristic, C. Tran, R.F. Kalicek Jr, Z.C. Feng & I. Ferguson, “Time-resolved laser spectroscopy of nitride semiconductors,” Materials Science & Engineering B, 59, 147-149, 1999
  218. W. Krystek, F.H. Pollak, Z.C. Feng, M. Schurman & R.A. Stall, “Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance,” Appl. Phys. Lett., 72, 1353-55, 1998
  219. W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M. Schurman, Z.C. Feng, R.A. Stall & B. Goldenberg, “Near-band-edge photoluminescence emission in AlxGa1-xN under high pressure,” Appl. Phys. Lett., 72, 2274-2276, 1998
  220. Z.C. Feng, I. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, K. Tone, J.H. Zhao, A.T.S. Wee, K.L. Tan, F. Adar & B. Lenain, “Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques,” Materials Science Forum, 264-268, 693-696, 1998
  221. Z.C. Feng, M. Schurman, C. Tran, T. Salagaj, B. Karlicek, I. Ferguson, R.A. Stall, C.D. Dyer, K.P.J. Williams & G.D. Pitt,, “Photoluminescence and Raman Scattering characterization of GaN, InGaN and AlGaN films using a UV Excitation Raman-Photoluminescence microscope,” Materials Science Forum, 264-268, 1359-1362, 1998
  222. I. Ferguson, S. Liang, C. A. Tran, R. F. Karlicek, Z.C. Feng, Y. Lu & C. Joseph, “Breakdown mechanisms in Al(GaN) MSM photodetechtors, “Materials Science Forum,” Materials Science Forum, 264-268, 1437-1440, 1998
  223. I.T. Ferguson, C. Beckman, Z.C. Feng, A.G. Thompson, R. Stall, H.Q. Hou, K. Seipel, S.W. Chen & L. Aina, “MOCVD growth of high power 0.5W 35GHz MMICs,” J. Crystal Growth, 195, 648-654, 1998
  224. M. Pophristic, F.H. Long, C.A. Tran, R.F. Karlicek, Z.C. Feng & I. Ferguson, “Time-resolved spectroscopy of InxGa1-xN multiple quantum wells at room temperature,” Appl. Phys. Lett., 73, 815-817, 1998
  225. W. Shan, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M. D. McCluskey, N. M. Johnson, Z.C. Feng, M. Schurman & R.A. Stall, “Optical properties of InxGa1-xN grown by metalorganic chemical vapor deposition,” J. Appl. Phys., 84, 4452-4458, 1998
  226. J.C. Burton, L. Sun, M. Pophristic, F.H. Long, Z.C. Feng & I. Ferguson, “Spatial characterization of doped SiC wafers by Raman spectroscopy,” J. Appl. Phys., 84, 6268-6273, 1998
  227. Z.C. Feng, M. Schurman, R.A. Stall, M. Pavloski & A. Whitley, “Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metalorganic chemical vapor deposition,” Appl. Optics, 36, 2917-2922, 1997
  228. Z.C. Feng, M. Schurman & R.A. Stall, “How to distinguish the Raman modes of epitaxial GaN with phonon features from sapphire substrate,” J. Vac. Sci. Technol. A, 15, 2428-2430, 1997
  229. K. Li, A.T.S. Wee, J. Lin, K.L. Tan, L. Zhou, S.F.Y. Li, Z.C. Feng, H.C. Chou, S. Kamra & A. Rohatgi, “Several Efficiency Influencing Factors in CdTe/CdS Thin Film Solar Cells,” J. Materials Science: Materials in Electronics, 8, 125-132, 1997
  230. K. Li, A.T.S. Wee, J. Lin, K.K. Lee, F. Watt, K.L. Tan, Z.C. Feng & J.B. Webb, “Surface and interface analysis of InSb/GaAs,” Thin Solid Films, 302, 111-115, 1997
  231. L. Malikova, Y.-S. Huang, F.H. Pollak, Z.C.Feng, M. Schurman, C.A. Tran, T. Salagaj & R.A. Stall, “Temperature dependence of the energies and broadening parameters of the interband transitions in Ga0.95Al0.05N,” Solid State Commun., 103, 273-278, 1997
  232. W. Shan, J.J. Song, Z.C. Feng, M. Schurman & R.A. Stall, “Pressure-dependent photoluminescence study of InxGa1-xN,” Appl. Phys. Lett., 71, 2433-2435, 1997
  233. I. Ferguson, C. A. Tran, R. F. Karlicek Jr., Z.C. Feng, R. Stall, S. Liang, Y. Lu & C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetechtors,” Mat. Sci. & Engi. B, 50, 311-314, 1997
  234. Z.C. Feng, H. Gong, W.J. Choyke, N.J. Doyle & R.F.C. Farrow, “A multi-technique study of the surface preparation of InSb substrate and subsequent grown CdTe films by molecular beam epitaxy,” J. Materials Science: Materials in Electronics, 7, 23-26, 1996
  235. Z.C. Feng, H.C. Chou, A. Rohatgi, G.K. Lim, A.T.S. Wee & K.L. Tan, “Correlations between the MOCVD-grown CdTe/CdS/SnO2/glass solar cell efficiencies and the interface/surface properties,” J. Appl. Phys., 79, 2151-2153, 1996
  236. C.C. Tin, R. Hu, J. Liu, Y. Vohra & Z.C. Feng, “Raman microprobe spectroscopy of low-pressure-grown 4H-SiC epilayers,” J. Crystal Growth, 158, 509-513, 1996
  237. Z.C. Feng, A. Rohatgi, C.C. Tin, R. Hu, A.T.S. Wee & K.P. Se, “Structural, optical and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition,” J. Electronic Materials, 25, 917-923, 1996
  238. D.H. Lee, B. Park, Z.C. Feng, D.B. Poker, L. Riester & J.E.E. Baglin, “Surface hardness enhancement in nitrogen-implanted dense-amorphous carbon,” J. Appl. Phys., 80, 1480-84, 1996
  239. H.Y. Zhang, X.H. He, Y.H. Shih, M. Schurman, Z.C. Feng & R.A. Stall, “The wavequide study and the refractive indices of GaN:Mg epitaxial film,” Optical Lett., 21, 1529-1531, 1996
  240. H.Y. Zhang, X.H. He, Y.H. Shih, M. Schurman, Z.C. Feng & R.A. Stall, “The study of nonlinear optical effects in GaN:Mg epitaxial film,” Appl. Phys. Lett., 69, 2953, 1996
  241. W. Shan, B.D. Little, J.J. Song, Z.C. Feng, M. Schurman & R.A. Stall, “Optical transitions in InxGa1-xN alloys grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., 69, 3315-17, 1996
  242. C. Carter-Coman, A.S. Brown, N.M. Jokerst, D.E. Dawson, R. Bicknell-Tassius, Z.C. Feng, K.C. Rajkumar & G. Dangall, “Strain accommodation in mismatched layers by molecular beam epitaxy: introduction of a new compliant substrate technology,” J. Electronic Materials, 25, 1044-1048, 1996
  243. H.Y. Chen, J. Lin, K.L. Tan & Z.C. Feng, “Characterization of lead lanthanum titanate thin films grown on fused quartz using MOCVD,” Thin Solid Films, 289, 59-64, 1996
  244. K. Li, J. Lin, A.T.S. Wee, K.L. Tan, Z.C. Feng & J.B. Webb, “Surface and interface analysis of GaSb/ GaAs heterostructures grown by metalorganic magnetron sputtering,” Appl. Surf. Sci., 99, 59-66, 1996
  245. A.G. Thompson, M. Schurman, Z.C. Feng, R.F. Karlicek, T. Salagaj, C.A. Tran, R.A. Stall, “The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor,” MRS Internet J. Nitride Semicond. Res., 1, 24, 1996
  246. H.C. Poon, Z.C. Feng, Y.P. Feng & M.F. Li, “The relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te,” J. Phys. C: Condensed Matter, 7, 2783-2799, 1996
  247. A.T.S. Wee, Z.C. Feng, H.H. Hgn, K.L. Tan, R.F.C. Farrow & W.J. Choyke, “XPS and SIMS studies on MBE-grown CdTe/InSb(001) heterostructures,” J. Phys. C: Condensed Matter, 7, 4359-4369, 1995
  248. M.J. Bozack, J.R. Williams, J.M. Ferraro, Z.C. Feng, & R.E. Jones, Jr., “Physical characterization of Pb1Zr0.2Ti0.8O3 prepared by the sol-gel process,” J. Electrochem. Soc., 142, 485-491, 1995
  249. Z.C. Feng, C.C. Tin, R. Hu, & K.T. Yue, “Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapor deposition,” Semicond. Sci. & Tech., 10, 1418-1422, 1995
  250. Z.C. Feng, F. Watt, K.K. Lee, A.T.S. Wee, H.H. Hng, V. Arbet-Engels, R.P.G. Karunasiri, K.L. Wang & K.P.J. William, “Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy,” J. Chinese Institute of Electrical Engineering, 2, 69-73, 1995
  251. Z.C. Feng, C.C. Tin, R. Hu, & J. Williams, “Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition,” Thin Solid Films, 266, 1-7, 1995
  252. Z.C. Feng, S. Perkowitz, J. Cen, K.K. Bajaj, D.K. Kinell & R.L. Whitney, “Photoluminescence, Raman and infrared diagnostics of GaAs-AlGaAs superlattices for intersubband infrared detection,” IEEE J. Selected Topics in Quantum Electronics, 1, 1119-1125, 1995
  253. Z.C. Feng, A.T.S.Wee, S.H.Tang, K.L.Tan, J.R.Payne, B.Pucket & R.DuVarney, “A Comprehensive Analysis of Porous Silicon by Surface & Optical Techniques,” Trans.Mat.Res.Soc.Jpn., 19A, 119-122, 1994
  254. Z.C. Feng, A.T.S. Wee, W.J. Choyke & R.F.C. Farrow, “Indium Interdiffusion in CdTe/InSb Heterostructures Studied by Optical and Surface Analytical Techniques,” Trans. Mat. Re Soc. Jpn s., 19A, 175-178, 1994
  255. Z.C. Feng, B.S. Kwak, A. Erbil & L.A. Boatner, “Raman scattering and X-ray diffraction of highly-textured (Pb1-xLax)TiO3 thin films,” Appl. Phys. Lett., 64, 2350-2352, 1994
  256. W. Ji, A.K. Kukaswadia, Z.C. Feng, S.H. Tang & P. Becla, “Nonlinear refraction and optical limiting in bulk ZnTe crysta,” J. Crystal Growth, 138, 187-190, 1994
  257. Z.C. Feng, P. Becla, L.S. Kim, S. Perkowitz, Y.P. Feng, H.C. Poon, K.P. Williams & G.D. Pitt, “Raman, infrared, photoluminescence and theoretical studies of the II-VI-VI ternary CdSeTe,” J. Crystal Growth, 138, 239-243, 1994
  258. W. Ji, A.K. Kukaswadia, Z.C. Feng & S.H. Tang, “Self-defocusing of nanosecond laser pulses in ZnTe,” J. Appl. Phys., 75, 3340-3343, 1994
  259. Z.C. Feng, A.T.S. Wee & K.L. Tan, "Surface and optical analysis of porous silicon membranes, “Surface and optical analysis of porous silicon membranes,” J. Phys. D: Appl. Phys., 27, 1968-1975, 1994
  260. Z.C. Feng & A.T.S. Wee, “Raman, FTIR and surface analyses of porous silicon membranes,” a review chapter for the book <>, ed. by Z.C.Feng & R.Tsu, World Scientific Publishing, Singapore, 175-194, 1994
  261. A.T.S. Wee, Z.C. Feng, H.H. Hgn, K.L. Tan, C.C. Tin, R. Wu & R. Coston, “Surface chemical states on 3C-SiC/Si epilayers,” Appl. Surf. Science, 81, 377-385, 1994
  262. Z.C. Feng, B.S. Kwak, A. Erbil & L.A. Boatner, “Difference Raman spectra of PbTiO3 thin films grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., 62, 349-351, 1993
  263. Z.C. Feng, S. Perkowitz, D.K. Kinnel, R.L. Whitney & D.N. Talwar, “Compositional dependence of optical phonon frequencies in AlxGa1-xAs,” Phys. Rev. B, 47, 13466-13470, 1993
  264. Z.C .Feng, J.R. Payne & B.C. Covington, “Anomalous temperature behavior of Raman spectra from visible light emitting porous Si,” Solid State Commun., 87, 131-134, 1993
  265. D. Redd, Z.C. Feng, K.T. Yue & T. Gansler, “Raman spectroscopic characterization of human breast issue: implications for breast malignancy monitoring,” Applied Spectroscopy., 47, 787-91, 1993
  266. B. Lou & Z.C. Feng, “Valence subbands and acceptor levels in p-type GaAs-AlxGa1-xAs superlattices,” Semicon. Sci. Technol., 8, 1741-1745, 1993
  267. D.N. Talwar, Z.C. Feng, & P. Becla, “On the impurity-induced phonon disordering in novel Cd1-xZnxTe alloys,” Phys. Rev. B, 48, 17064-17069, 1993
  268. Z.C. Feng, A.A. Allerman, P.A. Barnes & S. Perkowitz, “Raman scattering of InxGa1-xAs/InP grown by Uniform Radial Flow Epitaxy,” Appl. Phys. Lett., 60, 1848-1850, 1992
  269. J.J. Dubowski, A.P. Roth. E. Deleporte, G. Peter, Z.C. Feng & S. Perkowitz, “Optical properties of CdTe-Cd0.90Mn0.10Te quantum well structures grown by pulsed laser evaporation and epitaxy,” J. Cryst. Growth, 44, 862-866, 1992
  270. M. Macler, Z.C. Feng, S. Perkowitz, R. Rousina & J.B. Webb, “Far infrared analysis of In1-xGaxSb thin films on GaAs grown by metalorganic magnetron sputtering,” Phys. Rev. B, 46, 6902-6906, 1992
  271. K.T. Yue, Z.C. Feng, S. Perkowitz & B. Puckett, “A simple, versatile, liquid nitrogen cryostat for Raman studies,” Applied Spectroscopy, 46, 1590-92, 1992
  272. D.N. Talwar and Z.C. Feng, “Tight-binding description for the bound electronic states of isolated single and paired native defects in bata-SiC,” Phys. Rev. B, B44, 3191-3198, 1991
  273. Z.C .Feng, S. Perkowitz, R. Rousina & J.B. Webb, “Raman and infrared spectroscopies of In1-xGaxSb thin films on GaAs grown by metalorganic magnetron sputtering,” Can. J. Phys., 69, 386-389, 1991
  274. Z.C .Feng, S. Perkowitz & P. Becla, “Multiple phonon overtones in ZnTe,” Solid State Commun., 78, 1011-1014, 1991
  275. Z.C. Feng, S. Perkowitz, & J.J. Dubowski, “Raman scattering studies of Cd1-xMnxTe films on GaAs by pulsed laser evaporation and epitaxy,” J. Appl. Phys., 69, 7782-7787, 1991
  276. J. Hwang, K. Zhang, B.S. Kwak, A. Erbil & Z.C. Feng, “Growth of textured diamond films on Si (100) by C2H2/O2 flame method,” J. Materials Research, 5, 2334-2336, 1990
  277. Z.C. Feng, S. Perkowitz, T.S. Rao & J.B. Webb, “Resonance Raman scattering from epitaxial InSb thin films,” J. Appl. Phys., 68, 5363-5365, 1990
  278. S. Perkowitz, L.S. Kim, Z.C. Feng, P. Becla, “Optical phonons in Cd1-xZnxTe,” Phys.Rev. B, B42, 1455-1457, 1990
  279. Z.C. Feng, S. Perkowitz & O.K. Wu, “Raman and resonant Raman scattering for the HgTe/CdTe superlattice,” Phys. Rev. B, B41, 6057-6060, 1990
  280. R. Sudharsanan, Z.C. Feng, S. Perkowitz, A. Erbil, K.T. Pollard & A. Rohatgi, “Characterization of MOCVD-grown CdMnTe films by infrared spectroscopy,” J. Electronic Materials, 18, 453-455, 1989
  281. Z.C. Feng, S. Perkowitz, R. Sudharsanan, A. Erbil, K.T. Pollard, A. Rohatgi, J. Bradshaw & W.J. Choyke, “Photoluminescence of Cd1-xMnxTe films grown by metalorganic chemical vapor deposition,” J. Appl. Phys., 66, 1711-1716, 1989
  282. Z.C. Feng, S.Perkowitz, J.M.Wrobel & J.J.Dubowski, “Outgoing multi-phonon resonant Raman scattering and luminescence near the Eo gap in epitaxial CdTe films,” Phys. Rev. B, B39, 12997-13000, 1989
  283. Z.C. Feng, R. Sudharsanan, S. Perkowitz, A. Erbil, K.T. Pollard & A. Rohatgi, “Raman scattering characterization of high-quality Cd1-xMnxTe films grown by metalorganic chemical vapor deposition,” J. Appl. Phys., 64, 6861-6863, 1988
  284. Z.C. Feng, W.J. Choyke & J.A. Powell, “Raman determination of layer stresses and strains for heterostructures and its application to the cubic 3C-SiC/Si system,” J. Appl. Phys., 64, 6827-6835, 1988
  285. Z.C. Feng, A. Mascarenhas, W.J. Choyke & J.A. Powell, “Raman scattering studies for chemical vapor deposited 3C-SiC films on (100) Si,” J. Appl. Phys., 64, 3176-3186, 1988
  286. W.J. Choyke, Z.C. Feng & J.A. Powell, “Low temperature photoluminescence studies of CVD grown cubic SiC on Si,” J. Appl. Phys., 64, 3163-3175, 1988
  287. Z.C. Feng, M.J. Bevan, W.J. Choyke & S.V. Krishnaswamy, “A photoluminescence comparison of CdTe thin films grown by molecular beam epitaxy, metalorganic chemical vapor and UHV sputtered depositions,” J. Appl. Phys., 64, 2595-2600, 1988
  288. Z.C. Feng, M.J. Bevan, W.J. Choyke & S.V. Krishnaswamy, “A photoluminescence comparison of CdTe thin films grown by molecular beam epitaxy, metalorganic chemical vapor and UHV sputtered depositions,” J. Appl. Phys., 64, 2595-2600, 1988
  289. Z.C. Feng, M.G. Burke, W.J. Choyke, “Structural defect related donor-bound exciton spectra in MBE (001) CdTe films,” Appl. Phys. Lett., 53, 128-130, 1988
  290. Z.C. Feng, A. Mascarenhas & W.J. Choyke, “Low temperature photoluminescence spectra of (001) CdTe films grown by molecular beam epitaxy at different substrate temperatures,” J. Lumin., 35, 329-341, 1986
  291. Z.C. Feng, A. Mascarenhas, W.J. Choyke, R.F.C. Farrow, F.A. Shirland & W.J. Takei, “A photoluminescence study of molecular beam epitaxy grown CdTe films on (001) InSb substrates,” Appl. Phys. Lett., 47, 24-25, 1985
  292. Z.C. Feng, “The eigenequation of angular momentum operator induced in spherical coordinates,” University Physics, Vol. 5, No. 2, 41-43, 1984
  293. H.D. Liu, Z.C .Feng & Z.Z. Guo, “The stresses and photoelastic effects in GaAs-GaAlAs multilayer wafers with masked and selective thermal oxidation structure,” Acta Optica Sinica, 3, No. 6, 542-549, 1984
  294. H.D. Liu & Z.C .Feng, “Polarization characteristics of stripe geometry GaAs-Ga1-xAlxAs DH lasers with masked and selective thermal oxidation structure,” China Lasers, 10, 65-69, 1983
  295. Z.C. Feng & H.D. Liu, “Curvature Radius and layer stresses for thermal strain in semiconductor multilayer structures,” Chinese J. of semicond., 4, 171-180, 1983
  296. H.D. Liu & Z.C. Feng, “The stresses and photoelastic effects in stripe geometry GaAs-GaAlAs DH lasers with masked and selective thermal oxidation (MSTO) structure,” IEEE J. Quantum Electron., QE-19, 1016-1020, 1983
  297. Z.C. Feng & H.D. Liu, “Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures,” J. Appl. Phys., 54, 83-85, 1983
  298. H.D. Liu, W.X. Chen & Z.C. Feng, “Studies of native oxides of GaAs,” Chinese J. of Semicond., 3, 359-365, 1982
  299. H.D. Liu & Z.C. Feng, “Lloyd's mirror interference in a medium - A new method for determining photoelastic index variation,” Electron. Lett., 18, 251-252, 1982

Conference & proceeding papers:

  1. Yi Ting He, Min Gong, Zhi Ren Qiu, Bao Ping Zhang and Zhe Chuan Feng, “Internal quantum efficiency droop of GaN LED,” Optics & Photonics Taiwan International Conference (OPTIC), 4-5, 2014_Thu-P0802-P017, Taichung, Taiwan, Dec. 2014
  2. Xiaodong Jiang, Yueh-Chien Lee, Hao-Chung Kuo, Li Lei, Zhe Chuan Feng, “Optical Properties of Green InGaN/GaN Multiple Quantum Well Light-emitting Diodes,” International Symposium on Semiconductor Light Emitting Devices (ISSLED-10), 2-pages, Kaohsiung, Dec. 2014
  3. Yi Ting He, Min Gong, Zhi Ren Qiu, and Zhe Chuan Feng, “Internal quantum efficiency droop of GaN LED,” International Symposium on Semiconductor Light Emitting Devices (ISSLED-10), 2-pages, Kaohsiung, Dec. 2014
  4. Yi Ting He, Min Gong, Zhi Ren Qiu, and Zhe Chuan Feng, “Internal quantum efficiency droop of GaN LED,” 11th China International Forum on Solid State Lighting (SSLCHINA), Guangzhou, Nov. 2014
  5. Deng Xie, Yi Ting He, Zhi Ren Qiu, Devki N Talwar, Ting Mei, Chin-Che Tin, and Zhe Chuan Feng, “FTIR spectroscopy analyses on homo-epitaxy 4H-SiC structures,” International Electronic Devices and Materials Symposium (IEDMS), 20-21, Hualian, Taiwan, Nov. 2014
  6. Yi Ting He, Zhi Ren Qiu, Feng Huang, Devki Talwar, and Zhe Chuan Feng, “Resonant Raman Scattering in ZnO at Low Temperature,” IEDMS), 2-pages, Oral, Abstract Book p.48, #1085, 20-21, Hualian, Taiwan, Nov. 2014
  7. Zhe Chuan Feng and Zhi Ren Qiu, “Spectroscopic Ellipsometry Studies for Wide Range of Thin Film Semiconductors and Oxides (椭偏测量在半导体材料与光伏材料领域的应用),” 第一届全国椭圆偏振光谱学研讨会, Wuhan, Nov. 2014
  8. Deng Xie, Zhi Ren Qiu, Bin Xin, Ren-Xu Jia, Yu-Ming Zhang, Huirong Su, Ting Mei and Zhe Chuan Feng, “Properties of 3C/4H Structure Silicon Carbide studied by Spectroscopic Ellipsometry,” 第一届全国椭圆偏振光谱学研讨会, 21-24, Wuhan, Nov. 2014
  9. Deng Xie, Zhen Zhang, Zhi Ren Qiu, Ting Mei, Devki N Talwar, Hui Rong Su, Yi Liu, Ian Ferguson, and Zhe Chuan Feng, “Investigation of Optical functions of AlGaN Thin Films Grown on Sapphire with high Al content,” Optics & Photonics Taiwan International Conference (OPTIC), 2014_Fri-P1002-P013, Taichung, Taiwan, Nov. 2014
  10. Yi Ting He, Chien Lin Huang, Lianshan Wang, Zhi Ren Qiu, Yueh-Chien Lee, Chee Wee Liu, and Zhe Chuan Feng, “Investigation of InGaN LED Grown on Facet GaN/sapphire,” International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 28-31, Guilin, China, Oct. 2014
  11. Zhe Chuan Feng, “Fruitful Research Accomplishments from Cross Taiwan Sea-Strait collaboration,” 第十屆海峽兩岸薄膜科學與技術研討會, 大会報告, 29-31, Wuhan, China, Oct. 2014
  12. Yi Ting He, Li Ze-Long, Qiu Zhi-Ren, Jiang Shao-Ji, Zhe Chuan Feng, “CdTe/CdS thin film solar cells: effects of CdCl2 annealing on optical properties,” 第十屆海峽兩岸薄膜科學與技術研討會6-pages, oral presentation, 29-31, Wuhan, China, Oct. 2014
  13. Mu-Chi Liu, Bo-Wei Wang, Hao-Hsiung Lin, Zhe Chuan Feng, Jyh -Fu Lee,Fan Ming Zeng, Xiao Dong Jiang, Ferry Wiryo Pranoto, “Antimony K-edge X-Ray Absorption Spectroscopy of GaAs0.91Sb0.07N0.02,” NSRRC (National Synchrotron Radiation Research Center) 2014 user meeting and Symposia, 10-12, Tsingchu, Taiwan, Sept. 2014
  14. Xiao Dong Jiang, Mu-Chi, Liu, Ferry Wiryo Pranoto, Fan Ming Zeng, Jyh -Fu Lee, Mingming Chen, Zikang Tang, Hao-Hsiung Lin, Chee Wee Liu, and Zhe Chuan Feng, “Zinc K-edge X-Ray Absorption Spectroscopy of BexZn1-xO,” ibid, Sept. 2014
  15. Ferry Wiryo Pranoto, Mu-Chi Liu, Jin-Ming Chen, Mingming Chen, Zikang Tang, Hao-Hsiung Lin, Chee Wee Liu, and Zhe Chuan Feng, “Be K-edge X-Ray Absorption Near Edge Structure of BexZn1-xO,” 8th Asia Oceania Forum for Synchrotron Radiation Research (AOFSRR 2014), 15-17, Hsinchu, Taiwan, Sept. 2014
  16. Fan Ming Zeng, Mu-Chi, Liu, Ferry Wiryo Pranoto, Xiao Dong Jiang, Jyh -Fu Lee, Shu Chang Wang, Xiong Zhang, Hao-Hsiung Lin, Chee Wee Liu, Zhe Chuan Feng, “Gallium K-edge X-Ray Absorption Spectroscopy of AlxGa1-xN,” 8th Asia Oceania Forum for Synchrotron Radiation Research (AOFSRR 2014), 15-17, Hsinchu, Taiwan, Sept. 2014
  17. Bahadir Kucukgok, Na Lu, Ian T. Ferguson, Shu Chang Wang, Xiong Zhang, and Zhe Chuan Feng, “ Structural and Optical Analyses of AlxGa1-xN Thin Films Grown by Metal-Organic Chemical Vapor Deposition,” oral presentation WB2-3, WLED-5 (International Conference on White LEDs & Solid State Lighting), Jeju island, Korea,, Jun. 2014
  18. Yi Ting He, Mutong Niu, Shuchang Wang, Zhi Ren Qiu, Xiong Zhang, Jingping Zhang, Jer-ren Yang and Zhe Chuan Feng, “Luminescence Transient Properties of MOCVD-grown InGaN/GaN MQW LEDs,” oral presentation WB3-3, WLED-5, Jeju island, Korea, Jun. 2014
  19. Shu Chang Wang, Xiong Zhang, Min Zhu, Chun Xia Wang, Fa Di Li, Chee-wee Liu and Zhe Chuan Feng, “Characteristics of high Al content AlxGa1-xN epitaxial layers grown by metal-organic chemical vapor deposition,” Poster PS1-5, WLED-5, Jeju, Korea, Jun. 2014
  20. Shu Chang Wang, Xiong Zhang, Chun Xia Wang, Yi Ping Cui, Chee Wee Liu, Zhe Chuan Feng, “ Effect of high-temperature AlN interlayer for improved performance of Si-doped n-AlGaN film grown on sapphire substrate,” 21th Symposium on Nano Device Technology (SNDT 2014), 4-pages, May 1-2, Hsinchu, Taiwan., May 2014
  21. Zhe Chuan Feng, “Comprehensive Studies on Luminescence Mechanisms of MOCVD-grown InGaN/GaN MQW LEDs,” invited presentation, China 13rd MOCVD national conference, Yangzhou, May 2014
  22. (346) Yi Ting He, Chien Lin Huang, Lianshan Wang, Yueh-Chien Lee, Zhi-Ren Qiu, and Zhe Chuan Feng, “Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on (112¯2) Facet GaN/sapphire Templates,” China 13rd MOCVD national conference, P58, Yangzhou, May 2014
  23. Bahadir Kucukgok, Na Lu, Ian T. Ferguson, Shu Chang Wang, Xiong Zhang, and Zhe Chuan Feng, “Structural and optical properties of quaternary InAlGaN thin films grown by metal-organic chemical vapor deposition,” International Symposium on Growth of III-Nitrides (ISGN-5), Poster E17, Atlanta, USA, May 2014
  24. Yi Ting He, Xiao Van Lei, Zhi Ren Qiu, Bao Ping Zhang, Na Lu, Ian Ferguson and Zhe Chuan Feng, “Optical Studies of Optical Pumped GaN-Based Vertical Cavity Surface Emitting Laser Structures,” International Symposium on Growth of III-Nitrides (ISGN-5), Poster J24, Atlanta, USA, May 2014
  25. Chun Hui Jiang, Xiao Chen Dong, Chee Wee Liu, Zhe Chuan Feng, “Nanoflake Ni(OH)2 film on 3D Graphene for high performance supercapacitor electrode,” ibid, 4-pages, 2014
  26. Zhe Chuan Feng, “Synchrotron Radiation X-ray Absorption Spectroscopic Studies on ZnO and Alloys,” The 6th Academic Conference on ZnO, Xiamen, China, Dec. 2013
  27. Chun Xia Wang, Fa Di Li, Shu Chang Wang, Min Zhu, Xiong Zhang, Hao-Hsiung Lin and Zhe Chuan Feng, “Properties of Variable Al Content of AlGaN Layers Grown by MOCVD,” The International Conference Optics & Photonics Taiwan (OPTIC 2013), Taiwan, Dec. 2013
  28. Deng Xie, Zhen Zhang, Yi Liu, Hui Rong Su, Ting Mei, Xue Mei Wu, Dong Sing Wuu, Chee Wee Liu and Zhe Chuan Feng, “Investigation of Optical Parameters of MgZnO Thin Films Grown on Sapphire,” The International Conference Optics & Photonics Taiwan (OPTIC 2013), Taiwan, Dec. 2013
  29. Hao Long, Mutong Niu, Guojia Fang, Jinping Zhang, Chee Wee Liu, Ian T. Ferguson, and Zhe Chuan Feng, “Optical and Structural Characteristics of InGaN/GaN Multiple Quantum Well Light-emitting Diodes,” The International Conference Optics & Photonics Taiwan (OPTIC 2013), Taiwan, Dec. 2013
  30. Zhe Chuan Feng, “Synchrotron Radiation Studies on Advanced Electronic/Optoelectronic Materials,” The Academic Conference of Guangdong Optical Society, Zhongshan, China, Dec. 2013
  31. D. Xie, J.H. Song, H.R. Su, J.L. Huang, T. Mei, C.W. Liu and Z.C. Feng, “Investigation of Optical Parameters of Boron doped AlN Thin Films Grown on Diamond,” International Electron Devices and Materials Symposium 2013 (2013 IEDMS), Taiwan, Nov. 2013
  32. Hao Long, J. Y. Yao, Eddy Jones, Guojia Fang, Ian T. Ferguson, Chee Wee Liu, and Zhe Chuan Feng, “Photoluminescence and Structural Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition,” International Electron Devices and Materials Symposium 2013 (2013 IEDMS), Taiwan, Nov. 2013
  33. Chun Xia Wang, Yi Ting He, Mu Tong Niu, J.Y. Yao, Eddy Jones, Zhi Ren Qiu, Xiong Zhang,, Hao-Hsiung Lin, and Zhe Chuan Feng, “Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes,” International Electron Devices and Materials Symposium 2013 (2013 IEDMS), Taiwan, Nov. 2013
  34. Zhe Chuan Feng, “Temperature dependence of Raman scattering in n-type hexagonal SiC,” The 17th Academic Conference of Light Scattering, Chengdu, China, Oct. 2013
  35. Hong Chao Wang, Hua Yang Sun, Ting Mei, Zhi Ren Qiu, Zhe Chuan Feng, “Temperature dependence of Raman scattering in n-type 6H-SiC,” The 17th Academic Conference of Light Scattering, Chengdu, China, Oct. 2013
  36. Xiang Ping Shu, Cheng Chen, Zhi Ren Qiu, Chia-Cheng Wu, Dong-Sing Wuu and Zhe Chuan Feng, “Optical Properties of MgZnO Alloys with Varied Growth Temperature by Metalorganic Chemical Vapor Deposition,” The Sixth Asia-Pacific Workshop on Widegap Semiconductors (APSW2013), Taipei, B-001, May 2013
  37. Cheng Chen, Zhi Ren Qiu, Zhengcheng Li, Jianping Liu, and Zhe Chuan Feng, “Temperature and power dependence of photoluminescence in InGaN quantum dots,” The Sixth Asia-Pacific Workshop on Widegap Semiconductors (APSW2013), Taipei, C-002, May 2013
  38. Wei Zheng, Yu Li Wu, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, and Rui Sheng Zheng, “Determination of bond lengths and electronic structure of Cd1-xZnxTe ternary alloys by synchrotron radiation,” The 3rd International Conference on Mechatronics and Intelligent Materials (MIM 2013), XiShuangBanNa, China, May 2013
  39. Xiang Ping Shu, Cheng Chen, Zhi Ren Qiu, and Zhe Chuan Feng, “Anneal effects in Cd09Zn0.1Te:In allays grown by Traveling Heater Method,” 第13届全国发光学会议, Nanjing, Apr. 2013
  40. Zhe Chuan Feng, “氮化銦鎵/氮化鎵多量子阱發光二極體的發光機制研究,” 第13届全国发光学会议, Nanjing, Apr. 2013
  41. Wei Zheng, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, and Rui Sheng Zheng, “Study of bond lengths and electronic structure of Cd0.5Zn0.2Mn0.3Te quaternary alloy by x-ray absorption spectroscopy,” 3rd International Conference on Advanced Measurement and Test (AMT 2013), Xiamen, China, Mar. 2013
  42. Jingping Zhang and Zhe Chuan Feng, “High Resolution Transmission Electron Microscopy Studies on Dual Wavelength InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Charge Asymmetric Resonance Tunneling Structure,” APWS2013, C-017, 2013
  43. Eddy Jones, J. E. Yao, and Zhe Chuan Feng, “Strain Analyses on InGaN/GaN MQW LEDs by X-ary Reciprocal Space Mapping,” APWS2013, C-018, 2013
  44. Wei Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Hao-Hsiung Lin, Xin Qiang Wang, Ting-Shan Chan, Ling-Yun Jang, and Chee Wee Liu, “Study of high indium InXGa1-XN alloys with synchrotron radiation,” The International Conference on Information, Electronic and Electrical Engineering (ICIEEE 2013), 2013
  45. Wei Zheng, Zhe Chuan Feng, Chang Fan-Hsiu, Jyh-Fu Lee, Rui Sheng Zheng, Dong-Sing Wuu, and Chee Wee Liu, “Study of MgXZn1-XO alloys (0 < x < 0.15) by x-ray absorption spectroscopy,” 2012 International Conference of Health, Structure, Material and Environment (HSME 2012), Shenzhen, China, Dec. 2012
  46. Hua Yang Sun, Zhi Ren Qiu, Siou-Cheng Lien, and Zhe Chuan Feng, “Temperature Raman scattering spectrum of 4H-SiC with different doping levels,” OPTIC 2012, 3-pages, Taipei, Dec. 2012
  47. Qinyu Kong and Zhe Chuan Feng, “Analysis of CdSexTe1-x Infrared Reflectance Spectra,” OPTIC 2012, 3-pages, Taipei, Dec. 2012
  48. Wei Zheng, Chang Fan-Hsiu, Jyh-Fu Lee, Zhe Chuan Feng, Rui Sheng Zheng, Dong-Sing Wuu, and Chee Wee Liu, “Study of MgXZn1-XO alloys (0 < x < 0.15) by x-ray absorption spectroscopy,” TACT 2012, 4-pages, Taipei, Nov. 2012
  49. Xiang Ping Shu, Hong C. Wang, Cheng Chen, Zhi Ren Qiu, Ting Mei, Chia-Cheng Wu, Dong-Sing Wuu and Zhe Chuan Feng, “Temperature Dependence of Resonance Raman Scattering and Photoluminescence from MgZnO Alloys by Metalorganic Chemical Vapor Deposition,” Taiwan Vacuum Society (TVS) 2012 Annual Meeting, 6-pages, TaiChung, Taiwan, Oct. 2012
  50. Tao Yu, Tsung Lung Huan, You Ren Lan, William E. Fenwick, Xue Mei Wu, Ian T. Ferguson and Zhe Chuan Feng, “X-ray photoelectron spectroscopy studies of ZnO thin films grown by metalorganic chemical vapor deposition,” Taiwan Vacuum Society (TVS) 2012 Annual Meeting, 6-pages, TaiChung, Taiwan, Oct. 2012
  51. Chih-Cheng Wei, C.G. Jin, Cheng Chen, Tao Yu, Xue Mei Wu, Zhi Ren Qiu, Jin-Ming Chen and Zhe Chuan Feng, “Studies on sputter-deposited Cr-doped ZnO thin films grown on Si,” 第八屆海峽兩岸薄膜科學與技術研討會, 4-pages, Ninbo, China, Oct. 2012
  52. Wei Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Ling-Yun Jang and Chee Wei Liu, “3C-, 4H- and 6H-SiC wafers studied by X-ray absorption,” Europe Conference of Silicon Carbide and Related Materials (ECSCRM), Saint Petersburg, Russia, Sept. 2012
  53. Hua Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Zhe Chuan Feng, “Abnormal temperature dependence of Raman scattering in 4H-SiC,” Europe Conference of Silicon Carbide and Related Materials (ECSCRM), #8, Saint Petersburg, Russia, Sept. 2012
  54. Lin Li, Chi-Jing Hong-Liao, Yi Zhe Huang, Cheng Chen, Shude Yao, ZiRong Qiu, H. H. Lin, Ian T. Ferguson and Zhe Chuan Feng, “Rutherford Backscattering and Optical Studies of InAlGaP Materials Grown on GaAs by Metalorganic Chemical Vapor Deposition,” SPIE, 10-pages, San Diego, Aug. 2012
  55. Wenjie Wang, Yu Cheng Yang, Ting-Shan Chan, Peng Chen, Tzuen-Rong Yang, Zhe Chuan Feng, “Infrared and X-ray Absorption Studies of CdTe Thin Films,” SPIE, 8470-30, San Diego, Aug. 2012
  56. Lei Liu, Wenjie Wang, J.-L. Huang, Xiaodong Hu, Peng Chen, J.-J. Huang, Zhe Chuan Feng, “Time-Resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures,” SPIE, 8484-38, San Diego, Aug. 2012
  57. Cai Rong Ding, Ze Long Li, Zhi Ren Qiu, and Zhe Chuan Feng, “Photoluminescence and stimulated emission characteristics from Cd1-xZnxTe alloy crystals,” International Photonics Conference (IPC 2011), 4-pages, Tainan, Taiwan, Dec. 2011
  58. T.Y. Lin, L. Li, Y.L. Chung, Q. Xu, I. Ferguson, S.D. Yao, Z.Y. Wu, D. S. Wuu, Z.C. Feng, “Raman and Rutherford Backscattering Studies on AlGaN Thin Films with Variable Flow Rates of Trimethylindium,” International Photonics Conference (IPC 2011), 3-pages, Tainan, Taiwan, Dec. 2011
  59. I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Gang Li , Qiang Xu, and Zhengyun Wu, ““High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells,” International Photonics Conference (IPC 2011), 3-pages, Tainan, Taiwan, Dec. 2011
  60. Qiang Xu, Yi-Li Tu, Ling-Yun Jang, Chin-Che Tin, Chee Wee Liu, Zhengyun Wu, and Zhe Chuan Feng, “X-ray absorption and optical studies of cubic SiC thin films grown on Si substrates by chemical vapor deposition,” International Photonics Conference (IPC 2011), 3-pages, Tainan, Taiwan, Dec. 2011
  61. Qiang Xu, Yi-Li Tu, Zhe Chuan Feng, Ling-Yun Jang, RUSLI, Zhengyun Wu, and Chee Wee Liu, “X-ray absorption and Raman scattering studies on 4H-SiC,” International Photonics Conference (IPC 2011), 3-pages, Tainan, Taiwan, Dec. 2011
  62. Cheng Chen, Lin Li, Yee-Ling Chung, Tse-Yang Lin, Yueh-Chien Lee, Shude Yao, Zhi Ren Qiu, Ian T. Ferguson, Dong-Sing Wuu and Zhe Chuan Feng, “Raman Scattering and Rutherford Backscattering of MOCVD-Grown AlGaN Layers Influenced by the Indium Incorporation,” International Electron Devices and Materials Symposium (IEDMS) 2011, 4-pages, Taipei, Nov. 2011
  63. Binfeng Ding, Feng Pan, Fengfeng Cheng, Tao Fa, Shude Yao, Zhe Zhuan Feng, “The optical and structural properties of InGaN/GaN multiple quantum wells by metal organic chemical vapor deposition,” International Electron Devices and Materials Symposium (IEDMS) 2011, 4-pages, Taipei, Nov. 2011
  64. Yee Ling Chung, Lin Li, Shude Yao, Nola Li, Ian Ferguson, Dong-Sing Wuu, Zhe Chuan Feng, “Rutherford Backscattering and Optical Investigation of High Indium-Compositional InGaN Thin Films Grown on ZnO Substrates,” nternational Union of Materials Research Societies (IUMRS) International Conference in Asia (ICA), 4-pages, Taipei, Sept. 2011
  65. Huayang Sun, Cheng Chen, Zhi Ren Qiu, Chee Wee Liu, Zhe Chuan Feng, “Confocal Raman depth profile for hetero-structural SiC structures,” International Union of Materials Research Societies (IUMRS) International Conference in Asia (ICA), 4-pages, Taipei, Sept. 2011
  66. Devki N. Talwar and Z. C. Feng, “Magneto Optical Response in Hg(Cd)MnTe Semiconducting Alloys,” 15th International Conference on Narrow Gap Systems (NGS15), 3-pages, Virginia Tech, USA, Aug. 2011
  67. Y.R. Lan, S.-P. Liu, C.C. Wei, Y.-C. Fu, Y.R. Wu, J.M. Chen, M.-H. Wang, R.-H. Horng, D.-S. Wuu, Z.C. Feng, “X-ray Absorption Fine-Structure and Optical Studies of AlZnO Nano-Thin Films Grown on Sapphire by Pulsed Laser Deposition,” SPIE Photonics+Solar Energy+Technology, 81040X-1-8, San Diego, Aug. 2011
  68. T.-Y. Lin, L. Li, C. Chen, Y.-L. Chung, S.D. Yao, Y.-C. Lee, Z.R. Qiu, I.T. Ferguson, D.-S. Wuu, Z.C. Feng, “Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation,” SPIE Photonics+ Solar Energy+Technology, 812309-1-12, San Diego, Aug. 2011
  69. J.-L. Huang, L.S. Wang Y.-S. Lai, Y.-C. Lee, Z.R. Qiu, S. Liu, D.-S. Wuu, Z. C. Feng, “Structural and Optical Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown on (112¯2) Facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition,” SPIE Photonics+Solar Energy+Technology, 81230C-1-11, San Diego, Aug. 2011
  70. Lianshan Wang, Sheng Liu and Zhe Chuan Feng, “InGaN multiple quantum well blue LED grown on patterned sapphire substrates,” The International Symposium on Photonics and Optoelectronics (SOPO 2011), 4-pages, Wuhan, China, May 2011
  71. Zhe Chuan Feng, Yu-Li Tu, Yu Shian Lai, Yan-Hao Huang, Kung-Yen Lee, Ling-Yun Jang, Chin-Che Tin, Chee-Wee Liu, “Cubic SiC Thin Films Studied by Synchrotron Radiation X-ray Absorption and Photoluminescence-Raman Scattering,” Symposium on nano device technology, 4-pages, Taipei, Apr. 2011
  72. Yee-Ling Chung, Tse-Yang Lin, Yu Shian Lai, Lin Li, Shude Yao, Dong-Sing Wuu, Ian T. Ferguson, and Zhe Chuan Feng, “MOCVD-Grown High Al-Compositional AlGaN Thin Films Studied by Rutherford Backscattering and Material Characterization,” Symposium on nano device technology, 4-pages, Taipei, Apr. 2011
  73. Y.C. Yang, J.K. Wong, T.S. Chan, I. Ferguson, Z.C. Feng, “X-ray Absorption Fine Structure studies of InSb films on GaAs,” International Electronics Devices and Materials Symposium (IEDMS) 2010, oral, C2-3, 4pp, Taoyuan, Taiwan, Nov. 2010
  74. Y.S. Lai, L.C. Chen, K.H. Chen, Z.C. Feng, “Polarized Raman spectra on single AlN nanowire,” International Electronics Devices and Materials Symposium (IEDMS) 2010, oral, D1-7, 4pp, Taoyuan, Taiwan, Nov. 2010
  75. Y.C. Yang, Z.C. Feng, T.S. Chan, I. Ferguson, “X-ray absorption and Raman study of GaN films grown on Silicon,” IEDMS 2010, P-C-21, 4pp, Taoyuan, Taiwan, Nov. 2010
  76. S.Y. Hu, Y.C. Lee, Z.C. Feng, S.H. Yang, Y.C. Chen, “Optical properties of quaternary InxAlyGa1-x-yN/GaN thin film,” IEDMS 2010, P-C-32, 2pp, Taoyuan, Taiwan, Nov. 2010
  77. Y.R. Lan, C.C. Wei, S.P. Liu, Y.C. Fu, R.H. Horng, D.S. Wuu, J.M. Chen, and Z.C. Feng, “Synchrotron Radiation Absorption Fine-structure Spectroscopy and Raman Scattering Studies of AlZnO Grown on Sapphire,” Materials Research Society-Taiwan 2010, CD04-1000, 4pp, Kaohsiung, Taiwan, Nov. 2010
  78. C.C. Wei, C.L. Huang, S.P. Liu, Z.C. Feng, R.H. Horng, and D.S. Wuu, “Raman and optical transmission studies of Ga2O3 thin films grown on sapphire,” Materials Research Society-Taiwan 2010, CD04-0842, 4pp, Kaohsiung, Taiwan, Nov. 2010
  79. Yu-Shiung Lai, Z.C. Feng, Li-Chyong Chen and Kuei-Hsien Chen, “Synthesis and Optical properties of Aluminum Nitride NanoWires,” Materials Research Society-Taiwan 2010, CD08-1105, 4pp, Kaohsiung, Taiwan, Nov. 2010
  80. Z.C. Feng, “Luminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes,” Proc. 7th China Intern. Forum on Solid State Lighting, 81-85, Shenzhen, China, Oct. 2010
  81. Z.S. Lee, L.M. Kong, Z.C. Feng, A.G. Li, H.-L. Tsai, J.-R. Yang, “Luminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes,” Proc. 7th China Intern. Forum on Solid State Lighting, 86-90, Shenzhen, China, Oct. 2010
  82. T.W. Kuo, J.L. Huang, Z.C. Feng, C.Y. Wu, H.L. Tsai, J.R. Yang, I.T. Ferguson, “MOCVD growth and investigation of dual wavelength InGaN/GaN multiple quantum well light emitting diodes,” 16th MicroOptics Conference (MOC’10), Technical Digest CD, WP29, pp.146-147, Hsinchu, Taiwan, Oct. 2010
  83. T.R. Yang, Y.H. Shih, S.H. Jhang, Y.C. Yang, Z.C. Feng, P. Becla, “Optical Phonons and Transport Properties of Cd1-xZnxTe by Far Infrared Spectroscopy Studies,” 16th MicroOptics Conference (MOC’10), Technical Digest CD, WP54, pp.197-198, Hsinchu, Taiwan, Oct. 2010
  84. K.Y. Lee, Y.L.Tu, Z.C. Feng, “Extended X-ray Absorption Fine Structure and Raman Scattering of 3C-SiC,” 16th MicroOptics Conference (MOC’10), Technical Digest CD, WP68, pp. 273-274, Hsinchu, Taiwan, Oct. 2010
  85. C.J. Wu, Y.R. Lan, L.Y. Chang, Z.C. Feng, H.H. Lin, “X-ray absorption fine-structure spectroscopy of InAsPSb grown on GaAs substrate by molecular beam epitaxy,” 16th MicroOptics Conference (MOC’10), Technical Digest CD, WP84, pp. 257-258, Hsinchu, Taiwan, Oct. 2010
  86. T.H. Wu, C.C. Lin, I. Ferguson, D.-S. Wuu, G. Xu, Z.C. Feng, “Brillouin scattering studies of aluminum gallium nitride,” 16th MicroOptics Conference (MOC’10), Technical Digest CD, WP92, pp. 273-274, Hsinchu, Taiwan, Oct. 2010
  87. L. Li, Y.L. Chung, T. Fa, N. Li, S. Yao, Z.C. Feng, I.T. Ferguson, Weijie Lu, “Rutherford Backscattering Studies of InGaN/GaN Structures Grown on ZnO substrates,” 16th MicroOptics Conference (MOC’10), Technical Digest CD, WP103, pp.295-96, Hsinchu, Taiwan, Oct. 2010
  88. I.H. Hung, Y.H. Lai, Z.C. Feng, S. Gupta, T. Zaidi, I. Ferguson, W. Lu, “Optical, Structural Properties and Experimental Procedures of GaGdN Grown by Metalorganic Chemical Vapor Deposition,” SPIE Auguster meeting, Vol.7784, p77840H1-10, San Diego, Aug. 2010
  89. T.Y. Lin, Y.L. Chung, L. Li, S. Yao, Y.C. Lee, Z.C. Feng, I.T. Ferguson, W. Lu, “Optical, Structural and Nuclear Scientific Studies of AlGaN with High Al Composition,” SPIE Auguster meeting, Vol.7784, p778415-1-11, San Diego, Aug. 2010
  90. I.H. Hung, Y.H. Lai, Z.C. Feng, G. Li, I. Ferguson, W. Lu, “High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application,” SPIE Auguster meeting, Vol.7784, p77840Z1-12, San Diego, Aug. 2010
  91. Y.L. Chung, L. Li, S. Yao, Z.C. Feng, W.E. Fenwick, T. Zaidi, I.T. Ferguson, W. Lu, “Rutherford Backscattering and Optical Studies for ZnO Thin Films on Sapphire Substrates Grown by Metalorganic Chemical Vapor Deposition,” SPIE Auguster meeting, Vol.7784, p778416-1-10, San Diego, Aug. 2010
  92. Y.L. Wu, C.C. Wei, Z.C. Feng, J.F. Lee, W. Tong, B.K. Wagner, I. Ferguson, Weijie Lu, “X-ray absorption and Raman study of GaN thin films grown by molecular beam epitaxy,” Proceeding of MBE Taiwan, page D-51/D-52, Taiwan, Aug. 2010
  93. Y.R. Lan, C.J. Wu, H.H. Lin, L.Y. Chang, Z.C. Feng, “Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy,” Proceeding of MBE Taiwan, page D-53/D-54, Taiwan, Aug. 2010
  94. Y.L. Chung, X. Peng, Y.C. Liao, S. Yao, L.C. Chen, K.H. Chen, Z.C. Feng, W. Lu, “Rutherford Backscattering and Raman Scattering Studies on InN Films Grown by Plasma-Assisted Molecular Beam Epitaxy,” APCPST & SPSM 2010, The 10th Asia Pacific Conference on Plasma Science and Technology and the 23th Symposium on Plasma Science f, p.233, Jeju, Korea, Jul. 2010
  95. C.C. Wei, X.M. Wu, Z.C. Feng, “Multiple LO phonon resonance for ZnO:Cu,” Phonon 2010, p.135, Taipei, Taiwan, Apr. 2010
  96. T.Y. Lin, Y.L. Chung, Z.C. Feng, I. Ferguson, W. Lu, “Phonon study on different composition of AlGaN thin films grown by metal-organic chemical vapor deposition,” Phonon 2010, p.152, Taipei, Taiwan, Apr. 2010
  97. Y.L. Chung, Y.L. Tu, Z.C. Feng, W. Lu, “Micro-Raman Scattering on 6H-SiC with Different Nitrogen Doping Levels,” Phonon 2010, p.253, Taipei, Taiwan, Apr. 2010
  98. Y.L. Chung, X. Peng, Y.C. Liao, S. Yao, L.C. Chen, K.H. Chen, Z.C. Feng, W. Lu, “Combined Rutherford Backscattering and Raman Scattering Studies on InN Films Grown by Molecular Beam Epitaxy,” Proceeding of MBE Taiwan, page D-55/D-56, Taiwan, 2010
  99. Y.R. Lan, C.J. Wu, H.H. Lin, T.S. Chan, Z.C. Feng, “Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy,” Proceeding of MBE Taiwan, page D-92/D-93, Taiwan, 2010
  100. F. Li, T.H. Wu, Z.C. Feng, C.C. Lin, W. Lu, “Brillouin scattering study of gallium nitride,” The 13th International Conference on Phonon Scattering in Condensed Matter (Phonon 2010), Oral,, p.189, 2010
  101. Z.C. Feng, Y.Z. Huang, C.L. Huang, J.H. Ting, G. Xu, Weijie Lu, “Low onset electric field emission of multi-wall carbon nanotube arrays from micro-plasma enhanced chemical vapor deposition,” APCPST & SPSM 2010, The 10th Asia Pacific Conference on Plasma Science and Technology and the 23th Symposium on Plasma Science, p.47, 2010
  102. Yu Li Wu, Tsung Han Wu, Zhe Chuan Feng, Jyh-Fu Lee, Ian Ferguson, and Weijie Lu, “Extended X-ray Absorption Fine-Structures from MOCVD-Grown Si-doped GaN on Sapphire,” Optics and Photonics Taiwan (OPT), 3-pages, Taiwan, Dec. 2009
  103. Yi-Li Tu, You-Ren Lan, Dong-Sing Wuu, Shih-Hung Chang, Ling-Yun Chang, and Zhe Chuan Feng, “Extended X-ray Absorption Fine-Structures from MgxZn1-xO materials,” Optics and Photonics Taiwan (OPT), 3-pages, Taiwan, Dec. 2009
  104. Ting-Wei Kuo, Jen-Lin Huang, Zhe Chuan Feng, C.Y. Wu, Hong-Ling, “Growth and investigation of dual wavelength InGaN/GaN multiple quantum well light emitting diodes by MOCVD,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-5, Taiwan, Dec. 2009
  105. Yee Ling Chung, Zhe Chuan Feng, Lin Li, Shude Yao, Nola Li, Ian T. Ferguson, and Weijie Lu, “Rutherford Backscattering Analysis of InGaN/GaN Structures Grown on ZnO substrate,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-6, Taiwan, Dec. 2009
  106. You-Ren Lan, Zhe Chuan Feng, Nola Li, Ian Ferguson, and Weijie Lu, “Second Ion Mass Spectroscopy for Surface and Structural Investigation of InGaN/GaN on ZnO Substrate,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-7, Taiwan, Dec. 2009
  107. Tsung-Han Wu, Zhe Chuan Feng, Chung-Cherng Lin, Weijie Lu, “A Brillouin scattering study of indium gallium nitride,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-8, Taiwan, Dec. 2009
  108. Tse-Yang Lin, Zhe Chuan Feng, Chen-Fu Chu, and Chuong Tran, “Optical Properties of High Brightness GaN Vertical Light Emitting Diodes on Metal Alloyed Substrate,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-9, Taiwan, Dec. 2009
  109. I Hsiang Hung, Wei Chih Cheng, Zhe Chuan Feng, Gang Li, Yueh Chien Li, “Time-resolved Photoluminescence of InGaN/GaN Multi-Quantum Wells,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-10, Taiwan, Dec. 2009
  110. Yi-Li Tu, Chih-Cheng Wei, Zhe-Chuan Feng, Chia-Cheng Wu, Dong-Sing Wuu, “Combined Photoluminescence and Raman studies on MgZnO,” the second International Conference on White LEDs and Solid State Lighting, 2-pages, PO-11, Taiwan, Dec. 2009
  111. Lin Li, Shude Yao,Yee Ling Chung, Zhe Chuan Feng, Ian T. Ferguson and Weijie Lu, “Rutherford Backscattering for AlInGaP Epi-materials Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition,” Optics & Photonics Taiwan, AP209, 3-pages, Taipei, Dec. 2009
  112. Yu Li Wu, Yu Cheng Yang, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, and Weijie Lu, “Extended X-ray Absorption Fine-Structures from CdZnTe Ternary Alloys,” Optics & Photonics Taiwan (OPT), AO233, 3-pages, Taipei, Dec. 2009
  113. Weifeng Yang, Zhengyun Wu, Aisuo Pang, Yu-Li Tu, Zhe Chuan Feng, and Weijie Lu, “AlZnO Thin Films and Thermal Annealing for Solar Cell Applications Prepared by RF Magnetron Sputtering at Room Temperature,” International Symposium on Advanced Ceramics and Technology for Sustainable Energy Applications, 2-pages, P022, Taiwan, Nov. 2009
  114. Wolfgang Braun, A. Erbil, Zhe Chuan Feng, and Weijie Lu, “Lead Zirconate Titanate Thin Ceramic Films with Full Composition Range Prepared by Metalorganic Chemical Vapor Deposition,” International Symposium on Advanced Ceramics and Technology for Sustainable Energy Applications, 2-pages, Taiwan, Nov. 2009
  115. Zhe Chuan Feng, Ting-Wei Kuo, C.Y. Wu, Hong-Ling Tsai, Jer-Ren Yang, Ian T. Ferguson and Weijie Lu, “Growth and Investigation of dual wavelength InGaN/GaN multiple quantum well light emitting diodes by MOCVD,” 6th China International Exhibition & Forum on Solid State Lighting, 4-pages, China, Oct. 2009
  116. Yu Li Wu, Zhe Chuan Feng, W. Tong, M. Harris, B. K. Wagner and Ian T. Ferguson, “Raman and X-ray absorption studies of GaN films grown on different substrates by different techniques,” 15th Light Scattering Conference, 4-pages, China, Oct. 2009
  117. Yi-Li Tu, Ling-Yun Jang, Zhe Chuan Feng, and Weijie Lu, “Investigation of Raman Scattering and Synchrotron Radiation X-Ray Absorption Spectrum on Silicon Carbide,” 15th Light Scattering Conference, 4-pages, China, Oct. 2009
  118. Nola Li; Will Fenwick; Andrew Melton; I-Hsiang Hung; Zhe Chuan Feng; Christopher Summers; Muhammad Jamil; Ian Ferguson, “III-nitride epilayers on ZnO substrates by MOCVD using Al2O3 as a transition layer,” SPIE, 74220J, 8-pages, San Diego, USA, Aug. 2009
  119. T. W. Kuo, T. Y. Lin, Z. C. Feng, W. Liu, S. J. Chua, H. L. Tsai, J. R. Yang, Y. S. Huang, I. Ferguson, and W. Lu, “Optical Properties and Material Studies of InGaN/GaN Multi-Quantum Well Light Emitting Diode Wafers with Different Structures,” SPIE, 7422-25,12-pages, San Diego, Aug. 2009
  120. I-Hsiang Hung, You-Ren Lan, Tsung Han Wu, Zhe Chuan Feng, Nola Li, Hongbo Yu, Ian Ferguson, and Weijie Lu, “Nanoscale InGaN/GaN on ZnO substrate for LED applications,” SPIE, 7422-19, 12-pages, San Diego, Aug. 2009
  121. Yi-Li Tu, Zhe Chuan Feng, Ling-Yun Jang, and Weijie Lu, “Synchrotron Radiation X-ray Absorption Fine-structure and Raman Scattering Studies on 6H-SiC Materials,” SPIE, 7425-34, 11-pages, San Diego, Aug. 2009
  122. Tzuen-Rong Yang, Sheng-Hong Jhang, Yen-Hao Shih, Fu-Chung Hou, Yu-Chang Yang, Zhe Chuan Feng, P. Becla, Der-Chi Tien, “Far-IR reflectance spectra analysis of CdZnTe and related materials,” SPIE, 7449-20, 10-pages, San Diego, Aug. 2009
  123. Yu Li Wu, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, and Weijie Lu, “Synchrotron Radiation X-ray Absorption Fine-structure and Raman Studies on CdZnTe Ternary Alloys,” SPIE, 7449-25, 11-pages, San Diego, Aug. 2009
  124. Chun-Chu Liu, Kuan-Hsien Lu, Teddy Tite, Kuang-Yao Lo, Chun-Liang Long and Zhe-Chuan Feng, “Second Harmonic Generation of Nitrogen-Doped Silicon Carbon,” Proceedings of The Asia-Pacific Workshop on Widegap Semiconductors, p.190-193, Taiwan, 2009
  125. Yu Li Wu, Yi-Li Tu, Zhe Chuan Feng, W. Tong, M. Harris, B. K. Wagner and Ian T. Ferguson, “A polarized X-ray absorption study of GaN films grown on different substrates by different techniques,” Proceedings of The Asia-Pacific Workshop on Widegap Semiconductors, p.190-193, Taiwan, 2009
  126. Nola Li, Shen-Jie Wang, Will Fenwick, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Christopher Summers, and Ian Ferguson, “ALD Al2O3 as a Transition Layer for III-Nitride Epilayers on ZnO Substrates,” Proceedings of The Asia-Pacific Workshop on Widegap Semiconductors, p.284-286, Taiwan, 2009
  127. T.W. Kuo, T.Y.Lin, Z.C. Feng, W. Liu, S.J. Chua, H.L. Tsai, J.R. Yang, Y.S. Huang, “Investigation on InGaN/GaN Multi-Quantum Well Light Emitting Diode Wafers with Different Structures,” Proceedings of The Asia-Pacific Workshop on Widegap Semiconductors, p.297-300, Taiwan, 2009
  128. Chia-Cheng Wu, Po-Rung Lin, Dong-Sing Wuu, Yi-Li Tu, and Zhe Chuan Feng, “MOCVD Growth and Characterization of MgZnO Materials,” Proceedings of The Asia-Pacific Workshop on Widegap Semiconductors, p.301-304, Taiwan, 2009
  129. Yee Ling Chung, Lin Li, Shude Yao, Zhe Chuan Feng, William E. Fenwick, Tahir Zaidi, and Ian T. Ferguson, “Rutherford Backscattering and Optical Studies for ZnO Thin Films on Sapphire Substrates Grown by Metalorganic Chemical Vapor Deposition,” International Electron Devices and Materials, 2-pages, GB32, Taiwan, 2009
  130. Yi-Li Tu, Yee Ling Chung, Zhe Chuan Feng, Ling-Yun Jang and Weijie Lu, “Synchrotron Radiation X-Ray Absorption Spectrum Investigation on 6H-SiC with Different Nitrogen Dopings,” International Electron Devices and Materials, 2-pages, B2-6, Taiwan, 2009
  131. Yi-Li Tu, Zhe Chuan Feng, Ling-Yun Jang and Weijie Lu, “Synchrotron Radiation X-ray Absorption Fine-structure and Raman Scattering Studies on 6H-SiC Materials,” Material Research Society 2009 Anneal meeting, 4-pages, 04-0430, Taiwan, 2009
  132. Lin Li, Tianxiang Chen, Tao Fa, Kun Wang, Shude Yao, Nola Li, Ian T. Ferguson, Yee Ling Chung, and Zhe Chuan Feng, “Rutherford Backscattering on InGaN/GaN Grown on ZnO substrate by Metal Organic Chemical Vapor Deposition,” Material Research Society 2009 Anneal meeting, 4-pages, 04-0607, Taiwan, 2009
  133. Yu-Lun Liu, Yu-Shiung Lai, Li-Chyong Chen, Kuei-Hsien Chen, Ping-Jung Huang, Gou-Chung Chi, and Zhe Chuan Feng, “Fabrication and Diluted Magnetic Property of (Ga1-x, Cox)N NanoWires,” Material Research Society 2009 Anneal meeting, 4-pages, Taiwan, 2009
  134. T.W. Kuo, T.Y. Lin, Z.C. Feng, W. Liu, S.J. Chua, H.L. Tsai, J.R. Yang, Y.S. Huang,, “Optical Properties and Material Studies of Different InGaN/GaN Multi-Quantum Well Structures Light Emitting Diode Wafer,” International Conference on Optics and Photonics in Taiwan (OPT) 2008, Fri-P1-307, 4-pages, Taipei, Taiwan, Dec. 2008
  135. Yen-Ting Chen, Yu Li Wu, Zhe Chuan Feng, Jyh-Fu Lee, Weijie Lu, “X-ray Absorption Fine-structure Spectroscopy on CdZnTe Ternary Alloys,” International Conference on Optics and Photonics in Taiwan (OPT) 2008 & International Symposium on Solar Cell Technology (ISSCT), Sat-S26-02, 4-pages, Taipei, Taiwan, Dec. 2008
  136. Tsuang-Lung Huang, Yi-Li Tu, Zhe Chuan Feng, Nao Li, Shen-Jie Wang, Ian Ferguson, “X-Ray Photoelectron Spectroscopy and Second Ion Mass Spectroscopy Study of GaN and InGaN on ZnO Substrate,” International Conference on Optics and Photonics in Taiwan (OPT) 2008 & International Symposium on Solar Cell Technology (ISSCT), Sat-S26-03, 4-pages, Taipei, Taiwan, Dec. 2008
  137. Yi-Li Tu, Yen-Ting Chen, Zhe Chuan Feng, N.C. Chen, Jyh-Fu Lee, “X-ray Absorption Fine-Structure Spectroscopy Investigation of GaN Thin Films on Si,” OPT 2008, Sat-S32-02, 4-pages, Taipei, Taiwan, Dec. 2008
  138. Yu Li Wu, Tsung-Lung Huang, Zhe Chuan Feng, Chia-Cheng Wu, Po-Rung Lin, Dong-Sing Wuu, “Variable angle spectroscopic ellipsometry investigations of MgZnO on c-face sapphire,” OPT 2008, Sat-S43-06, 4-pages, Taipei, Taiwan, Dec. 2008
  139. Chih-Hsiang Lin, Ying Jie Liao, Li-Chyong Chen, Kuei-Hsien Chen, Ian T. Ferguson, Zhe Chuan Feng, “Indium Nitride Nanowires: Growth and Characteristics,” OPT 2008, Sat-P2-077, Taipei, Taiwan, Dec. 2008
  140. Tsung Lung Huan, You Ren Lan, Zhe Chuan Feng, William E. Fenwick, Ian Ferguson, “Spectroscopic ellipsometry and X-ray photoelectron spectroscopy studies of bulk and epitaxial ZnO thin films,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, A12, 01-019, 4-pages, Taiwan, Dec. 2008
  141. Fu-Chung Hou, Yu-Cheng Yang , Tzuen-Rong Tang, Zhe Chuan Feng, A. A. Allerman, P. A. Barnes, Weijie Lu, “Infrared reflectance studies of InGaAs thin films grown on InP by uniform radial flow epitaxy,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, B51, 02067, 4-pages, Taiwan, Dec. 2008
  142. Lin Tse Yang,Yen-Ting Chen, Zhe Chuan Feng, Ian Ferguson, “AlGaN/GaN thin films grown on sapphire by metalorganic chemical vapor deposition,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, B35, 02-048, 4-pages, Taiwan, Dec. 2008
  143. F. C. Hou, Yu-Chang Yang, Z. C. Feng, T. R. Yang, “Far-infrared reflectance analysis of bulk and epitaxial InSb,” Annual Meeting of Taiwan Association of Coatings and Thin Films (AMTACT) 2008, B39, 02-055, 4-pages, Taiwan, Dec. 2008
  144. Yu Li Wu, Tsung Lung Huan, You Ren Lan, Zhe Chuan Feng, Ian Ferguson, “X-ray photoelectron spectroscopy and spectroscopic ellipsometry studies of AlN thin layers grown by metalorganic chemical vapor deposition,” AMTACT 2008, D05, 04-009, 4-pages, Taiwan, Dec. 2008
  145. I-Hsiang Hung, Siou-Cheng Lien, Zhe Chuan Feng, Chieh-Hsiung Kuan, Weijie Lu, “Temperature dependence of Raman scattering in 4H-SiC,” AMTACT 2008, D06, 04-010, 4-pages, Taiwan, Dec. 2008
  146. Chung-Lung Huang, Zhe Chuan Feng, Yi Ling Shen, Wong How Kwong, Andrew T. S. Wee, Nola Li, Shen Jie Wang and Ian Ferguson, “Surface and structural investigation of n-InGaN on ZnO with GaN buffer layer grown by metal organic chemical vapor deposition,” Materials Research Socity Taiwan 2008 anneal meeting, P04-020, CD-00760076, 4-pages, Taipei, Taiwan, Nov. 2008
  147. Fu-Chung Hou, Zhe Chuan Feng, T. R. Tang and Weijie Lu, “Infrared reflectance spectroscopy studies of Hg1-xMnxTe ternary alloys,” Materials Research Socity Taiwan 2008 anneal meeting, P05-002, CD-00770077, 4-pages, Taipei, Taiwan, Nov. 2008
  148. Ling Min Kong, Zhe Chuan Feng, Zheng Yu Wu and Weijie Lu, “Time-resolved photoluminescence investigation of InAs quantum dots with InGaAs strained reducing layer,” Materials Research Socity Taiwan 2008 anneal meeting, P04-030, CD-01460146, 4-pages, Taipei, Taiwan, Nov. 2008
  149. Chun-Chiang Kuo, Chih-Wei Hsu, Zhe Chuan Feng, Kuei-Hsien Chen, and Li-Chyong Chen, “Polarized Raman scattering of a-axis single GaN nanowires,” Materials Research Socity Taiwan 2008 anneal meeting, P07-012, CD-01010101, 4-pages, Taipei, Taiwan, Nov. 2008
  150. Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, Ian Ferguson, and Weijie Lu, “X-ray Absorption Fine-structure Spectroscopy Investigation on CdSeTe Alloys for Photovoltaic Application,” International Electronic Devices and Materials Symposium (IEDMS) 2008, CD-496, 4-pages, TaiChung, Taiwan, Nov. 2008
  151. Yu-Cheng Shin, Zhe Chuan Feng, Chieh-Hsiung Kuan, Ian Ferguson, and Weijie Lu, “Raman Scattering Properties of n-Type 6H-SiC,” International Electronic Devices and Materials Symposium (IEDMS) 2008, IEDMS 2008 CD-477, TaiChung, Taiwan, Nov. 2008
  152. Nola Li, Shen-Jie Wang, Chung-Lung , Zhe Chuan Feng, Hung-Lin Tsai, Jer-Ren Yang, Adriana Valencia, Jeff Nause and Ian Ferguson, “Metalorganic chemical vapor deposition of GaN and InGaN layer on ZnO substrate using a-Al2O3 as a trabsition layer,” Eighth International Conference on Solid State Lighting, Proc. SPIE, 7058K1-6, San Diego, USA, Aug. 2008
  153. Zhe Chuan Feng, Ting-Wei Kuo, C.Y. Wu, Hong-Ling Tsai, Jer-Ren Yang, Y. S. Huang, Ian T. Ferguson and Weijie Lu, “Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes (invited paper),” Eighth International Conference on Solid State Lighting, Proc. SPIE, 7058S1-12, San Diego, USA, Aug. 2008
  154. Zhe-Chuan Feng, Yi-Zhe Huang, Jyh-Hua Ting, Li-Chyong Chen, and Weijie Lu, “Field emission properties of multi-wall carbon nanotubes,” NanoScience + Engineering 2009, Proc. SPIE 7037OR-1-6, San Diego, USA, Aug. 2008
  155. Sa Huang, Pin-Fang Huang, Zhe Chuan Feng, April Brown, and Weijie Lu, “Optical and Material Characteristics of InAs/GaAs Quantum Dots,” NanoScience + Engineering 2009, Proc. SPIE 70391I-1-10, San Diego, USA, Aug. 2008
  156. Ping-Fong Huang, Yen-Ting Chen, H, Y. Lee, Zhe Chuan Feng, Hao-Hsiung Lin, and Weijie Lu, “Surface and Material Characteristics of Ga2O3 Thin Films on GaAs,” Optical Engineering + Applications 2009, Proc. SPIE 70670M-1-8, San Diego, USA, Aug. 2008
  157. Chih-Hsiang Lin, Chun-Chiang Kuo, Kuei-Hsien Chen, Li-Chyong Chen, Jianqiao Hu, and Zhe Chuan Feng, “Growth and characterization of indium nitride nanowires,” 16th Annual International Conference on Composites or Nano Engineering (ICCE-16), 439-440, Kunming, China, Jul. 2008
  158. C.L. Huang, Y.Z. Huang, Z.C. Feng, Y.L. Shen, N. Li, S.J. Wang and I. Ferguson, “Optical and structure properties of MOCVD-grown InGaN/GaN on ZnO substrate with Al2O3 transition layer by atomic layer deposition,” 2008 Taiwan Display Conference, p.383-386, Taipei, Taiwan, Jun. 2008
  159. T.W. Kuo, F.C. Hou, Z.C. Feng, W. Liu, H.L. Tsai, J.R. Yang and Y.S. Huang, “Optical and material studies of InGaN/GaN multi-quantum well light emitting diode wafer with different structure,” 2008 Taiwan Display Conference, p.387-390, Taipei, Taiwan, Jun. 2008
  160. Zhe Chuan Feng, Hong-Lin Tsai, Jheng-Hong Chen, Jer-Ren Yang, Alan Gang Li, and Ian T. Ferguson, “Nano-structural Characteristics of InGaN/GaN multiple quantum well light-emitting diodes grown by metalorganic chemical vapor deposition,” 15th INT. CON. on COMPOSITES/NANO ENGINEERING, 2-pages, in ICCE-15 proceedings, 2007
  161. Z. S. Lee, Z. C. Feng, A. G. Li, H. L. Tsai, J. R. Yang, Y. F. Chen, N. Li, I. T. Ferguson and W. Lu, “Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” Seventh International Conference on Solid State Lighting, edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian, Proc. of SPIE, Vol. 6699, 66690I, 2007
  162. Nola Li, Shen-Jie Wang, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Chris Summers, Ian Ferguson, “Growth of InGaN with High Indium Content on ZnO Based Sacrificial Substrates,” Seventh International Conference on Solid State Lighting, edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian, Proc. of SPIE, Vol. 6699, 66690X, 2007
  163. Z. S. Lee, Z. C. Feng, H. L. Tsai, J. R. Yang, A. G. Li, L. C. Chen, K. H. Chen, Y. F. Chen, I. T. Ferguson, and W. Lu, “Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: effects of nano-structural features,” Manufacturing LEDs for Lighting and Displays, edited by T. P. Pearsall, Proc. of SPIE, Vol. 6797, 67970S, 2007
  164. Z. C. Feng, “Environment-Friendly and High-Efficiency White and Blue Light Emitting Devices and Materials for New Lighting Ech,” AEARU Joint Workshop-ICASS 2007, p. 65-73, 2007
  165. Pin-Fang Huang, Sa Huang, April Brown, Zhe Chuan Feng, Hao-Hsiung Lin and Weijie Lu, “Optical and Material Characteristics of InAs/GaAs Quantum Dots,” Taiwan 2007 MRS meeting, 4-pages, CD, Taiwan, 2007
  166. Z. S. Lee, Z. C. Feng, A. G. Li, T. Y. Lin, and Y. F. Chen, “Time-resolved photoluminescence studies of InGaN/GaN multiple quantum well light emitting diodes,” Taiwan 2007 MRS meeting, 4-pages, CD, Taiwan, 2007
  167. L. C. Cheng, F. C. Hou, Z. C. Feng, C. C. Tin, C. H. Kuan, Y. W. Yang, “Raman Scattering and X-ray Photoelectron Spectroscopy Studies of Cubic Silicon Carbide grown on Si(100) by Chemical Vapor Deposition,” International Workshop on Widegap Semiconductors (IWWWS) 2007, 6-pages, CD-1, Taiwan, 2007
  168. Z. C. Feng, “Nano-structures and luminescence mechanisms of InGaN-based quantum well light emitting diodes,” International Workshop on Applied Optics & Nanophotonics (IWAON), 152-172, 2007
  169. Z. C. Feng, Yi-Zhe Huamg, Jyh-Hua Ting, Li-Chyong Chen, “Field Emission Properties of Muti-wall Carbon Nanotubes,” Optics and Photonics, Taiwan 2007, AO-065, 3-pages, Taiwan, 2007
  170. Z. C. Feng, L. C. Cheng, C. W. Huang, F. C. Hou, T. K. Li, C. C. Chang, “Characterization of Tb-doped SiO2 Grown on Si(111),” Optics and Photonics, Taiwan 2007, EO-007, 3-pages, Taiwan, 2007
  171. Z. C. Feng, P. F. Huang, Y. T. Chen, H. Y. Lee, “Optical and Material Characteristics of Ga2O3 Thin Films on GaAs,” Optics and Photonics, Taiwan 2007, EO-055, 3-pages, Taiwan, 2007
  172. Z. C. Feng, Shang-Yu Hong, Yi-Zhe Huang, Zhi-Ming Lai, “Optical Properties and Analyses of AlInGaP Double Heterostructure,” Optics and Photonics, Taiwan 2007, EO-065, 3-pages, Taiwan, 2007
  173. Z. C. Feng, Chu Wan Huang, Chao-Hsin Chien, “Dielectric Constants of High k and Low k Materials,” Optics and Photonics, Taiwan 2007, AP-037, 3-pages, Taiwan, 2007
  174. Z. C. Feng, T. W. Kuo, C. Y. Wu, H. L. Tsai, J. R. Yang, Y. S. Huang, “Optical characteristics of InGaN/GaN multiple quantum well light emitting diodes with modifiable charge asymmetric resonance tunneling structure,” Optics and Photonics, Taiwan 2007, HP-013, 3-pages, Taiwan, 2007
  175. Siou-Cheng Lien, Zhe Chuan Feng, Chieh-Hsiang Kuan, Rusli, W. E. Collins and Weijie Lu, “Bulk 4H-SiC: dependence of free carrier concentration with temperature,” Taiwan 2007 TACT meeting, #10-2, 4-pages, Taiwan, 2007
  176. Chu Wan Huang, Zhe Chuan Feng, Tzuen-Rong Yang and Ting Kai Li, “Optical Prosperities of Tb-doped SiO2 Thin Films by Spectroscopic Ellipsometry,” Taiwan 2007 TACT, #9-20, 4-pages, Taiwan, 2007
  177. Z. C. Feng, Yi-Zhe Huamg, Jyh-Hua Ting, Li-Chyong Chen, “Field Emission Properties of Muti-wall Carbon Nanotubes,” Taiwan 2007 TACT, #5-2, 4-pages, Taiwan, 2007
  178. Z. C. Feng, T. W. Kuo, C. Y. Wu, H. L. Tsai, J. R. Yang, Y. S. Huang, “Optical and structural properties of InGaN/GaN multiple quantum well light emitting diodes with modifiable charge asymmetric resonance tunneling structure,” Taiwan 2007 TACT, Proceedings-CD, 4-pages, Taiwan, 2007
  179. Z. S. Lee, T. W. Kuo, Z. C. Feng, A. G. Li, L. C. Chen, K. H. Chen, “Photoluminescence dynamics of InGaN/GaNmultiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” Taiwan 2007 TACT, #4-17, 4-pages, Taiwan, 2007
  180. Chu-Wan Huang, Zhe Chuan Feng, Yia-Chung Chang, and Ting-Kai Li, “Spectroscopic Ellipsometry Studies of Tb-doped SiO2 Thin Films,” MRS Symp. Proc. Symposium I, Materials and Processes for Non-Volatile Memories,, 6-pages, Slaughter and Dimitris Tsoukalas, 2007
  181. L.M. Kong, J.N. Yao, Y.B. Deng, Z.Y. Wu and Z. C. Feng, “Effects of the In0.1Ga0.9As Strained Layer on Structures and Spectra of InAs Self-assembled Quantum Dots,” Proceedings of the International Workshop on Modern Science and Technology, p.347-352, Taiwan, 2006
  182. Z.C. Feng and Z.Y. Wu, “Cubic SiC Grown on Si substrate by Chemical Vapor Deposition: Optical Characterization,” Proceedings of the International Workshop on Modern Science and Technology, p.450-455, Taiwan, 2006
  183. Z. C. Feng, S.Y. Hung, T.W. Kuo and I. Ferguson, “Defects-Related Optical Spectra of Cadmium Telluride Films Prepared by Molecular Beam Epitaxy,” Proceedings of MBE Taiwan 2006 and High-k Materials Workshop, C55-56, Taiwan, 2006
  184. S. Huang, A. Brown, A. Doolittle, Z.S. Lee and Z.C. Feng, “Modified Molecular Beam Epitaxy Growth of GaN on LiGaO2 substrates,” Proceedings of MBE Taiwan 2006 and High-k Materials Workshop, C60-61, Taiwan, 2006
  185. Z. C. Feng, P. F. Huang and I. T. Ferguson, “Raman Determination of Strain-Stress Release from MBE-grown Lift-Off InxGa1-xAs/GaAs Heterostructures,” Proceedings of the 11th Optoelectronics and Communication Conference, 2-pages in CD, Kaohsiung, 2006
  186. H. L. Tsai, J. R. Yang, I. T. Ferguson and Z. C. Feng, “The Structural Characteristics of InGaN/GaN multiple quantum wells observed by Transmission Electron Microscopy,” Proceedings of the 11th Optoelectronics and Communication Conference, 2-pages in CD, Kaohsiung, 2006
  187. Z.C. Feng, B. Xue, P. Chen, J. Lin and W. Lu, “Structural and Optical Investigation of Copper Nanoparticle and Microfiber Produced by Using Carbon Nanotube as Templates,” Proc. of 6th IEEE Conference on Nanotechnology, 4-pages, Cincinatti, 4-pages, USA, 2006
  188. Z. C. Feng, J. Chen, H. Tsai, J. Yang, P. Li, C. Wetzel, T. Detchprohm, J. Nelson, and I. T. Ferguson, “Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition,” Sixth International Conference on Solid State Lighting, 63370D-1 to D-10, USA, 2006
  189. Z. C. Feng, B. Xue, P. Chen, J. Lin, W. Lu, N. Li and I. T. Ferguson, “Optical and structural studies of copper nanoparticles and microfibers produced by using carbon nanotube as templates,” Sixth International Conference on Solid State Lighting, 8-pages, USA, 2006
  190. Z. C. Feng, Z. S. Lee, L. C. Cheng, Y. W. Yang and C. C. Tin, “Optical and surface properties of 3C-SiC on Si grown by chemical vapor deposition,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  191. Li-Chi Cheng, Chu-Wan Huang, Zhe-Chuan Feng, Ying-Lang Wang, and Hwo-Shuenn Sheu, “Synchrotron Radiation X-ray Diffraction and Spectroscopic Ellipsometry Investigation of Si3N4 on Si for sub-micro Si-IC applications,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  192. Zhen-Sheng Lee, Shang-Yu Hung, Ting Wei Kuo, Zhe-Chuan Feng, Tai-Yuan Lin, Yang-Fang Chen, Alan Gang Li, “Time-resolved photoluminescence of InGaN/GaN quantum well Light Emitting Diode,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  193. S. C. Lien, C. W. Huang, Z. C. Feng, S. Sun, C. Rice, G. S. Tompa, “Metal organic chemical vapor deposition and investigation of ZnO thin films on sapphire,” 2006能源與光電薄膜科技研討會, 4-pages, Taiwan, 2006
  194. Zhe Chuan Feng, Jim B. Webb, S. Ray Bullock and Weijie Lu, “Optical Studies of GaSb hetero-epitaxied on GaAs substrate by metalorganic magnetron sputtering,” Proc., Materials Research Society 2006 Annual Meeting, 4-pages, Taiwan, 2006
  195. Jheng Hong Chen, Zhe Chuan Feng, Peng Li, C. Wetzel, T. Detchprohm, and J. Nelson, “Optical property comparison of blue and green InGaN/GaN multiple quantum well light-emitting diodes prepared by metalorganic chemical vapor deposition,” Proc., Materials Research Society 2006 Annual Meeting, 4-pages, Taiwan, 2006
  196. Zhe Chuan Feng, Li-Chi Cheng, Chu-Wan Huang, Ying-Lang Wang, and T. R. Yang, “Synchrotron Radiation X-ray Diffraction and X-ray Photoelectron Spectroscopy Investigation on Si-based Structures for sub-micron Si-IC Applications,” 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, p981-984, Malysia, 2006
  197. Zhe Chuan Feng, Li-Chi Cheng, Chu-Wan Huang, Ying-Lang Wang and T. R. Yang, “Surface science and optical investigation on nano-scale thin films for Si-based 65-nm intergrated circuits application,” The 1st International Workshop on Functional Materials and the 3rd International Workshop on Nanophysics and Nanotechnology, p716-718, Vietnan, 2006
  198. Zhe Chuan Feng, Jim Webb, Weijie Lu and Warren E. Collins, “Effects of ion implantation on the optical properties of InSb,” 2006 International Electron Devices and Materials Symposia, p221-222, Taiwan, 2006
  199. Zhe Chuan Feng and Chin-Che Tin, “Raman scattering studies on cubic SiC grown on off-axis Si substrate by chemical vapor deposition,” 2006 International Electron Devices and Materials Symposia, p25-26, Taiwan, 2006
  200. Li-Chi Cheng, Zhe Chuan Feng, Ying-Lang Wang, Che-Chen Chang, Warren E. Collins and Weijie Lu, “X-ray photoelectron spectroscopy of SiN on Si for sub-micro Si-IC applications”, 2006 International Electron Devices and Materials Symposia,” 006 International Electron Devices and Materials Symposia, p497-498, Taiwan, 2006
  201. Z.C. Feng, L.C. Cheng, C.W. Huang and Y.L. Wang, “Synchrotron Radiation X-ray Photoelectron Spectroscopy and X-ray Diffraction Investigation on Si-based Structures for Sub-micron Si-IC Applications,” TAIWAN-INDIA CONFERENCE ON NANOMATERIALS, OS-07, Taiwan, 2006
  202. Z. S. Lee, S. Y. Hung, T. W. Kuo, Z. C. Feng, Y. F. Chen and A. G. Li, “Room temperature time-resolved photoluminescence of InGaN/GaN quantum well Light Emitting Diode,” Optics and Photonics Taiwan 2006, AP-034, Taiwan, 2006
  203. C. W. Huang, Z. C. Feng, Y. C. Chang and T. K. Li, “pectroscopic Ellipsometry study and analysis of Tb-doped SiO2 thin films Optics and Photonics,” Optics and Photonics Taiwan 2006, AP-033, Taiwan, 2006
  204. Li-Chi Cheng, Zhe Chuan Feng and Che-Chen Chang, “urface Chemical States of heteroepitaxial Mg doped GaN on Sapphire by Metalorganic Chemical Vapor Deposition,” Optics and Photonics Taiwan 2006, AP-140, Taiwan, 2006
  205. Shang-Yu Hung, Hong-Chia Lin and Zhe Chuan Feng, “Raman scattering of ZnO E2 phonon mode studied by spatial correlation model,” Optics and Photonics Taiwan 2006, AP-103, Taiwan, 2006
  206. W. Tong, M. Harris, B. K. Wagner, J. W. Yu, H. C. Lin and Z.C. Feng, “Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si substrates,” Proceeding of MBE Taiwan, page D-65/D-68, Taiwan, 2005
  207. Z.C. Feng, W.Y. Chang & J. Lin, “Photoluminescence properties of CdTe on InSb grown by molecular-beam epitaxy,” Proceeding of MBE Taiwan, page D-65/D-68, Taiwan, 2005
  208. H. L. Tsai, J. R. Yang, Z. H. Chen and Z.C. Feng, “FEG-TEM Observation on InGaN/GaN Multiple Quantum Wells,” 16th American Conference on Crystal Growth and Epitaxy and 12th US Biennial Workshop on Organometallic Vapor Phase Epitaxy, ACCGE-16, p. 194-195, Taiwan, 2005
  209. Z.C. Feng, J.H. Chen, H.L. Tsai and J.R. Yang, “Metalorganic Chemical Vapor Deposition and Structural/Optical Characteristics of InGaN/GaN Multiple Quantum Well Light Emitting Diode Wafers Grown on Sapphire,” Photonic Materials, Devices, and Applications, , Proc. of SPIE Vol. 5840,, p.201-209, Spain, 2005
  210. S. Z. Sun, G. S. Tompa,.C. Rice, P. Masaun, D. C. Look, B. B. Claflin, H. H. Liu and Z. C. Feng, “MOCVD Growth of ZnO Thin Films in large areas,” ibid, ACCGE-16, p. 107-108, 2005
  211. Z.C. Feng, J. W. Yu, H.C. Lin, L.S. Wang, and S.J. Chua, “Comparative investigation of MOCVD-grown GaN thin films on Si with and without periodic Si-delta dopings,” ICNS6, Bremen, Germany, 2005
  212. Z.C. Feng, J.H. Chen, H.L. Tsai, J.R. Yang, P. Li, C. Wetzel, T. Detchprohm and J. Nelson, “Transmission Electron Microscopy and Correlated Optical Investigation on InGaN/GaN Multiple Quantum Well Light Emitting Diodes,” Asia-Pacific Advanced Microscopy Symposium, CD-2-pages, Taiwan, 2005
  213. H.L. Tsai, T.Y. Wang, J.R. Yang, J.H. Chen and Z.C. Feng, “HAADF-STEM Imaging on V-defect and Superlattice of GaN-based semiconductor,” Asia-Pacific Advanced Microscopy Symposium, CD-2-pages, Taiwan, 2005
  214. S. Sun, G.S. Tompa, C. Rice, P. Masaun, J.B. Wang, Z.S. Lee, T.W. Kuo and Z.C. Feng, “Metalorganic chemical vapor deposition and materials properties of ZnO thin films grown on sapphire substrates,” Chinese Society of Materials Science (CSMS)Annual Meeting, CD, 4-pages, 4-1-I002, USA, 2005
  215. (128) J.H. Chen, Z.C. Feng, J.C. Wang, Z.S. Lee, H.L. Tsai, J.R. Yang, A. Parekh, E. Armour and P. Faniano, “Optical and material studies of InGaN/GaN multiple-quantum-well blue light emitting diodes,” Chinese Society of Materials Science (CSMS)Annual Meeting, CD, 4-pages, 4-1-P038, Taiwan, 2005
  216. Z.C. Feng, J.W. Yu, Z.S. Lee, C. Tran and I. Ferguson, “Material Properties of GaN Films Grown on SiC/SOI Substrate,” Chinese Society of Materials Science (CSMS) Annual Meeting, CD, 4-pages, Taiwan, 2005
  217. Z.C. Feng, T.W. Kuo and D.N. Talwar, “New Optical Futures of 3C-SiC Grown on Si by Chemical Vapor Deposition,” National Science Council – Optoelectronics Annual Meeting, CD, 3-pages, Taiwan, 2005
  218. J.W. Yu, J.C. Wang, Z.C. Feng, H. Kang, and I. Ferguson, “Dislocations in AlGaN epitaxial layers,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  219. Z.C. Feng, C.T. Chien, J.W. Yu, S.Y. Hung, L.C. Chen, and I. Ferguson, “Ion implantation in Gallium Nitride,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  220. J.H. Chen, J.C. Wang and Z.C. Feng, “Carrier localization in InGaN/GaN quantum well blue light emitting diodes,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  221. J.W. Yu, Z.C. Feng, J.B. Wang, Z.S. Lee, R. Varatharajan, B. Nemeth, J. Nause, I. Ferguson, “Optical characterization of ZnO materials grown by modified melt growth technique,” National Science Council – Optoelectronics Annual Meeting, CD-3-pages, Taiwan, 2005
  222. Zhe Chuan Feng and T. W. Kuo, “New Optical Futures of 3C-SiC Grown on Si by Chemical Vapor Deposition,” 2005 International Symposium on Thin Films and Nano-Technology and National Science Council Reports, CD, AP-10, 4-pages, Taiwan, 2005
  223. Z. C. Feng, L. C. Chang and A. Erbil, “Metalorganic chemical vapor deposition and material properties of ferroelectric lead titanate-based thin film oxides,” 2005 International Symposium on Thin Films and Nano-Technology and National Science Council Reports, CD, AP-11, 4-pages, Taiwan, 2005
  224. J. H. Chen, J. C. Wang, Z. C. Feng, and A. G. Li, “Metalorganic chemical vapor deposition and investigation of InGaN/GaN multiple quantum wells with excellent characteristics,” 2005 International Symposium on Thin Films and Nano-Technology and National Science Council Reports, CD, BP-10, 4-pages, Taiwan, 2005
  225. Z.C. Feng, “Raman spectroscopic detection of silicone leakage in human breast and lymph node tissues,” Proceedings of the Second Asian and Pacific Rim Symposium on Biophotonics (APBP 2004), IEEE Catalog Number: 04pp. 28-29, Taipei, Dec. 2004
  226. Z.C. Feng, “Turbo-disc Metalorganic Chemical Vapor Deposition and Optical / Structural Investigation of GaN-based Materials and Structures,” invited presentation, 1st Applied Science & Technology Conference, Photonics & Communication pp.11, Taiwan, Dec. 2004
  227. ( 5) Z.C. Feng, J.W. Yu, H.C. Lin, W. Tong, M. arris and B.K. Wagner, “Characterization of Crack-Free Thin GaN Layers on Si substrates by Pulse Source Injection Molecular Beam Epitaxy,” IUMRS International Conference in Asia (IUMRS-ICA-2004), F-O-24, ID-50, 5-pages, Hsinchu, Taiwan, Nov. 2004
  228. Z.C. Feng, J.W. Yu, H.C. Lin, L.S. Wang, S. Tripathy and S. J. Chua, “Control and Improvement of Crystalline Cracking from GaN Thin films grown on Si by Metalorganic Chemical Vapor Deposition,” IUMRS International Conference in Asia (IUMRS-ICA-2004), F-O-23, ID-41, 6-pages., Hsinchu, Taiwan, Nov. 2004
  229. T.R. Yang, J.B. Wang & Z.C. Feng, “Optical and Transport Properties of InSb Thin Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” The 3rd Asian conf. on CVD, B3 Conference Synopsis p.111-112, Taipei, Nov. 2004
  230. J.W. Yu, J. B. Wang, L.H. Peng, Z.C. Feng, and C.A. Tsan, “Material Properties of GaN Thin Films Grown on SiC/SOI Substrate,” The 3rd Asian conf. on CVD, B35, Conference Synopsis p.110, Taipei, Nov. 2004
  231. Z.C. Feng , H.C. Lin, W. Lu, W.E. Collins and I. Ferguson, “Surface and optical properties of AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” The 3rd Asian conf. on CVD, p.64-65, Taipei, Nov. 2004
  232. Z.C. Feng, K. Li, Y.T. Hou, C.C. Yang & J. Zhao, “A comparative study of high resolution transmission electron microscopy and infrared spectroscopy for GaN grown on sapphire by metalorganic chemical vapor deposition,” The 3rd Asian conf. on CVD, p.57, Taipei, Nov. 2004
  233. J.R. Chang, J.H. Chen, Z.C. Feng, J.K. Wang, P.Li, C. Wetzel, T. Detchprohm and J. Nelson, “Long Decay Time Blue-Green Emissions from InGaN/GaN Multiple Quantum Well Light Emitting Diode Wafers Grown by Metalorganic Chemical Vapor Deposition,” The 3rd Asian conf. on CVD, p.56-57., Taipei, Nov. 2004
  234. Z.C. Feng, W. Liu, S.J. Chua, C.C. Yang & J. Zhao, “Photoluminescence Features of Low Indium Composition InGaN Alloys Grown by Metalorganic Chemical Vapour Deposition,” The 3rd Asian conf. on CVD, p.16, Taipei, Nov. 2004
  235. Z.C. Feng, H.C. Lin, T.R. Yang, R.P.G. Karunasiri, W. Lu & W.E. Collins, “Multitechnique Characterization of Sandwiched Si/SiGe/Si Heterostructures,” Intern. Conf. on Electrochemical Society, Hawaii, Oct. 2004
  236. Z.C. Feng, T.R. Yang, J. Zhao, W. Lu, W.E. Collins, I. Ferguson, J.Z. Wan and F.H. Pollak, “Non-Destructive characterization of the ordering in AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor Deposition,” Crystal Growth Conference, France, Aug. 2004
  237. T.R. Yang, Z.C. Feng, W. Lu and W.E. Collins, “Far infrared reflectance spectroscopy of InSb thin films grown on GaAs by metalorganic vapor deposition,” in Proceedings of the XIXth International Conference on Raman Spectroscopy, Edited by Peter M. Fredericks, Ray L. Frost and Llew, p.629-630, Austrilia, 2004
  238. Z.C. Feng, “Second order Raman scattering of cubic silicon carbide,” in Proceedings of the XIXth International Conference on Raman Spectroscopy, Edited by Peter M. Fredericks, Ray L. Frost and Lle, p.242-243 and CD-ROM, O-81, Austrilia, 2004
  239. D.N. Talwar and Z.C. Feng, “Simulation of pressure dependent phonon properties of zinc blende silicon carbide,” Proceedings of the XIXth International Conference on Raman Spectroscopy, Edited by Peter M. Fredericks, Ray L. Frost and Llewell, p.97-98 and CD-ROM, O-4, Austrilia, 2004
  240. H. Kang, Z.C. Feng, and I. Ferguson, “Study on AlGaN and nucleation layers with X-Ray diffraction,” GaN and Related Alloys, MRS Symp. Proc. Vol. 798, Boston, 2004
  241. M. H. Kane, R. Varatharajan, Z.C. Feng, S. Kandoor, J. Nause, C. Summers, I. T. Ferguson,, “Characterization of bulk crystals of transition metal doped ZnO for spintronic applications,” Progress in Compound Semiconductor Materials III-Electronic and Optoelectronic Applications, MRS MRS Symp. Proc. Vol. 799,, Boston, 2004
  242. S. Ganesan, Z.C. Feng, D. Mehta, M.H. Kane, I. Ferguson, J. Nause, B. Wagner, and C. Summers, “Optical properties of bulk and epitaxial ZnO,” Progress in Compound Semiconductor Materials III-Electronic and Optoelectronic Applications, MRS MRS Symp. Proc. Vol. 799, Boston, 2004
  243. Z.C. Feng, D. Mehta, P.D. Helm, D. Nicol, I. Ferguson, J. Senawiratne and N. Dietz, “Effects of Cu-ion implantation into epitaxial (Ga,Al)N films grown by metalorganic vapor deposition,” GaN and Related Alloys, MRS Symp. Proc. Vol. 798,, Boston, 2004
  244. Heng-Yin Chen1 Bing-Yuh Lu2 Yi-Hui Wu1 Yao Ou-Yang1 Jin-Shin Lai3 Fok-Ching Chong, “THE DEVELOPMENT OF M3S-BASED GPS NAVIGATION POWER WHEELCHAIR AND TELE-MONITOR SYSTEM,” Proc. of Annual Symposium of Biomedical Engineering, Taipei, 2004
  245. Yi-Chu Chang1 Jen-Chien Chien1 Jin-Shin Lai2 Fok-Ching Chong1, “INTEGRATION of the MULTIPLE MASTER MULTIPLE SLAVE SYSTEM USING DIGITAL SIGNAL PROCESSORS,” Proc. of Annual Symposium of Biomedical Engineering, Taipei, 2004
  246. S. Ganesan, Z.C. Feng, D. Mehta, M.H. Kane, I. Ferguson, J. Nause, B. Wagner, and C. Summers, “Optical properties of bulk and epitaxial ZnO,” MRS MRS Symp. Proc., 1-6, Boston, 2004
  247. W. Tong, M. Harris, B.K. Wagner, C.J. Summers, Z.C. Feng and C.C. Yang, “Thin GaN Layers Growth on Silicon Substrates Using Pulse Source Injection Molecular Beam Epitaxy,” Proceedings: EL2004, 338-340, Canada, 2004
  248. Z.C. Feng, Y.J. Sun, L.S. Tan, S.J. Chua, J.W. Yu, J.H. Chen, C.C. Yang, W. Lu & W.E. Collins, “P-type doping in GaN through Be implantation,” International Workshop on Nitride Semiconductors, 19-23, Pitzburg, 2004
  249. H. Kang, N. Spencer, D. Nicol, Z.C. Feng, I. Ferguson, S. P. Guo, M. Pophristic, and B. Peres, “X-Ray Diffraction Analysis of Threading Dislocation Densities in Epitaxial Layers as Grown by MOCVD,” Proceedings of CLEO/Pacific Rim 2033, p. 226, 2003
  250. Y.C. Cheng, H.S. Chen, C.C. Yang, Z.C. Feng, G. A. Li, “Effects of emission properties of interface thin layers in InGaN/GaN quantum well structures,” Proceedings of CLEO/Pacific Rim 2003, p. 70, 2003
  251. Z.C. Feng, I.T. Ferguson, Y.T. Hou, and T.R. Yang, “Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapor deposition,” Proceedings of CLEO/Pacific Rim 2003, p. 23, 2003
  252. Z.C. Feng, L.S. Tan, S.J. Chua and Y. Sun, “Material properties of Be-implanted GaN,” ibid, page 371, 2003
  253. Z.C. Feng, “Past, Present and Prospective Development of SiC Materials, Devices and Applications,” 2nd Intern. Conf. on Materials for Advanced Technology/IUMRS-ICA 2003, page 370, Singapore, 2003
  254. T.R. Yang, Z.C. Feng and I. Ferguson, “Raman scattering study for self-organized Ge quantum dots formed on Si substrate,” Progress in Semiconductor Materials II - Electronic and Optoelectronic application, Vol. 744, M2.11.1-6, 2003
  255. H. Kang, N. Spencer, D. Nicol, Z.C. Feng, I. Ferguson, S.P. Guo, M. Pophristic & B. Peres, “X-Ray diffraction analysis of GaN and AlGaN,” MRS Symp. Proc., p.405-410, 2003
  256. Z.C. Feng, D. Talwar and I. Ferguson, “Spectroscopic properties of cubic SiC on Si,” MRS Symp. Proc., K2.14.1-6, 2003

Books:

  1. Zhe Chuan FENG, “Handbook of Solid-State Lighting and LEDs,” CRC press, Taylor & Francis Group, USA, 705 pages, Jun. 2017, ISBN:ISBN 9781498741415
  2. Zhe Chuan FENG, “III-Nitride Materials, Devices and Nanostructures,” World Scientific Publishing Press, Singapore, 410 pages, May 2017, ISBN:978-1-78634-318-5
  3. Zhe Chuan FENG, “Handbook of Zinc Oxides and Related Materials: Volume 1) Materials,” CRC press, Taylor & Francis Group, USA, 440 pages, Sept. 2012, ISBN:978-1-4398-55805
  4. Zhe Chuan Feng, “Handbook of Zinc Oxides and Related Materials: Volume 2) Devices and Nano-Engineering,” CRC press, Taylor & Francis Group, USA, 640 pages, Sept. 2012, ISBN:978-1-4398-55805, HB: 978-1-4398-5574-4
  5. Zhe Chuan FENG, “III-Nitride Devices and Nano-Engineering,” Imperia College Press, 450 pages, 2008
  6. Zhe Chuan FENG, “III-Nitride Semiconductor Materials,” Imperia College Press, UK, 428 pages, Mar. 2006
  7. Zhe Chuan FENG, “SiC Power Materials – Devices and Applications,” Springer, Berlin, 445 pages pages, 2004
  8. Zhe Chuan FENG and Jian H. ZHAO, “Silicon Carbide: Materials, Processings and Devices,” Taylor & Francis Books, Inc., New York, 389 pages pages, 2003
  9. Zhe Chuan FENG and Raphael TSU, “Porous Silicon,” World Scientific Publishing, Singapore, 465 pages pages, 1994
  10. Zhe Chuan FENG, “Semiconductor Interfaces, Microstructures and Devices: Properties and Application,” Institute of Physics Publishing, Bristol, 293 pages pages, 1993
  11. Zhe Chuan FENG, “Semiconductor Interfaces and Microstructures,” World Scientific Publishing, Singapore, 320 pages pages, 1992

other:

  1. Tao Lin and Zhe Chuan Feng, “Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light Emitting Diodes,” Jun. 2017, A review book chapter in Handbook of Solid-State Lighting and LEDs, ISBN 9781498741415, Editor: Zhe Chuan FENG, Chapter 9, Pages 185-216, CRC press, Taylor & Francis Group
  2. Yi Liang, Xiaodong Jiang, Devki N. Talwar, Liangyu Wan, Gu Xu, Zhe Chuan Feng, “Investigating Structural and Optical Characteristics of III-Nitride Semiconductor Materials,” May 2017, A review book chapter 7, pp.209-261, in III-Nitride Materials, Devices and Nanostructures, Editor: Zhe Chuan FENG, ISBN: 978-1-78634-318-5, World Scientific Publishing Press
  3. Zhe Chuan Feng, “Brief history review of research/development and basic/interdisciplinary characterization on ZnO,” Sept. 2012, a review chapter in "Handbook of Zinc Oxides and Related Materials: Volume 1) Materials", Editor: Zhe Chuan FENG, CRC press, Taylor & Francis Group, London/New York
  4. Z.C. Feng, J.R. Yang, A.G. Li & I.T. Ferguson, “Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition,” Aug. 2008, A review chapter in book "III-Nitride Devices and Nanoengineering", Imperial College Press, London, UK
  5. Z. C. Feng, “Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition,” Aug. 2004, A review chapter in book "SiC Power Materials – Devices and Applications", Ed. Zhe Chuan FENG, Springer, Berlin
  6. Z. C. Feng and A. T. S. Wee, “Raman, FTIR and surface analyses of porous silicon membranes,” Jun. 1994, a review chapter for book "Porous Silicon", ed. by Z.C.Feng & R.Tsu, World Scientific Publisher, Singapore