吳育任教授的著作列表 - Publication List of Yuh-Renn Wu

Publication List of 吳育任 Yuh-Renn Wu

Journal articles & book chapters:

  1. Chun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu*, “Analysis and optimization of GaN based Multi-channels FinFETs,” IEEE Transactions on nanotechnology, In press, May 2020
  2. Cheyenne Lynsky*, Abdullah I. Alhassan, Guillaume Lheureux, Bastien Bonef, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, and James S. Speck, “Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes,” Phys. Rev. Materials, 4, 054604, May 2020
  3. Jun-Yu Huang, Mei-Tan Wang, Guan-Yu Chen, Jung-Yu Li, Shih-Pu Chen, Jiun-Haw Lee, Tien-Lung Chiu, and Yuh-Renn Wu*, “Analysis of the Triplet Exciton Energy Transfer Mechanism at Heterojunction of Organic Light-Emitting Diode,” Journal of physics D, applied physics, In press, Apr. 2020
  4. Piotr Martyniuk*, Krystian Michalczewski, Tsung-Yin Tsai, Chao-Hsin Wu, and Yuh-Renn Wu, “A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector,” physica status solidi (a), on line now, 1900522, Feb. 2020
  5. Saulius Marcinkevičius, Rinat Yapparov, Leah Y. Kuritzky, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, “Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport,” Physical Review B, 101, 075305, Feb. 2020
  6. Tsung-Yin Tsai, Krystian Michalczewski, Piotr Martyniuk, Chao-Hsin Wu, and Yuh-Renn Wu*, “Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system,” Journal of Applied Physics, 127, 033104, Jan. 2020
  7. Christian Andrew Robertson*, Kai Shek Qwah, Yuh-Renn Wu, James S. Speck, “Modeling dislocation-related leakage currents in GaN p-n diodes,” Journal of Applied Physics, 126, 245705, Dec. 2019
  8. Jun-Yu Huang, En-Wen Chang, and Yuh-Renn Wu*, “Optimization of MAPbI$_3$-Based Perovskite Solar Cell With Textured Surface,” IEEE Journal of Photovoltaics, 9, 1686~1692, Nov. 2019
  9. Chih-Chieh Chen*, Shiue-Yuan Shiau, Ming-Feng Wu, and Yuh-Renn Wu*, “Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines,” Scientific Reports, 9, 16251, Nov. 2019
  10. P. Martyniuk*, K. Michalczewski, T.Y. Tsai, C.H. Wu and Y.R. Wu, “Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling,” Opto-Electronics Review, 27, 275~281, Sept. 2019
  11. Krystian Michalczewski*, Piotr Martyniuk, Łukasz Kubiszyn, Chao-Hsin Wu, Yuh-Renn Wu, Jarek Jureńczyk, Antoni Rogalski, Jozef Piótrowski, “Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling,” IEEE Electron Device Letters, 40, 1396~1398, Sept. 2019
  12. Saulius Marcinkevičius*, Rinat Yapparov, Leah Y Kuritzky, Yuh-Renn Wu, Shuji Nakamura, Steven P DenBaars, James S Speck, “Interwell carrier transport in InGaN/(In) GaN multiple quantum wells,” Applied Physics Letters, 114, 15, 151103, Apr. 2019
  13. Li-Cheng Chang, Jhih-Hao Lin, Cheng-Jia Dai, Ming Yang, Yi-Hong Jiang, Yuh-Renn Wu, and Chao-Hsin Wu*, “Systematic investigation of the thresholdvoltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs,” J. Appl. Phys., 125, 094502, Mar. 2019
  14. Han‐Wei Hsiao and Yuh‐Renn Wu*, “3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects,” physica status solidi (a), 216, 1800524, 2019
  15. Hung-Hsiang Chen, James S Speck, Claude Weisbuch, Yuh-Renn Wu*, “Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations,” Applied Physics Letters, 113, 153504, 2018
  16. W. Hahn, J-M Lentali, P Polovodov, N Young, S Nakamura, JS Speck, C Weisbuch, M Filoche, Y-R Wu, M Piccardo, F Maroun, L Martinelli, Y Lassailly, J Peretti*, “Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy,” Physical Review B, 98, 4, 045305, 2018
  17. Chia-Yen Huang*, Tzu-Ying Tai, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tien-Chang Lu, Yuh-Renn Wu, Hao-Chung Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics, 5, 2724~2729, 2018
  18. Wen-Yen Chang, Yang Kuo, Yu-Feng Yao, CC Yang, Yuh-Renn Wu, and Yean-Woei Kiang*, “Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode,” Optics Express, 26 (7), 8340~8355, 2018
  19. Chia-Ying Su, Meng-Che Tsai, Keng-Ping Chou, Hsin-Chun Chiang, Huang-Hui Lin, Ming-Yen Su, Yuh-Renn Wu, Yean-Woei Kiang, CC Yang*, “Method for enhancing the favored transverse-electric-polarized emission of an AlGaN deep-ultraviolet quantum well,” Optics express, 25, 26365~26377, Oct. 2017
  20. Te-Jen Kung, Jun-Yu Huang, Jau-Jiun Huang, Snow H. Tseng, Man-Kit Leung, Tien-Lung Chiu, Jiun-Haw Lee, and Yuh-Renn Wu*, “Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulation,” Optics Express, 25, 25492~25503, Sept. 2017
  21. Shuo-Fan Chen and Yuh-Renn Wu*, “A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons,” Appl. Phys. Lett., 110, 201109, Aug. 2017
  22. C. Y. Su; C. G. Tu; W. H. Liu; C. H. Lin; Y. F. Yao; H. T. Chen; Y. R. Wu; Y. W. Kiang; C. C. Yang*, “Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer,” IEEE Transactions on Electron Devices,, 64, 3226~3233, May 2017
  23. Chi-Kang Li, Marco Piccardo, Li-Shuo Lu, Svitlana Mayboroda, Lucio Martinelli, Claude Weisbuch, Marcel Filoche, Yuh-Renn Wu, “Localization landscape theory of disorder in semiconductors III: Application to transport and radiative recombination in light emitting diodes.,” Phys. Rev. B, 95, 144206, Apr. 2017
  24. Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu, James S. Speck, Bastien Bonef, Bob Farrell, Marcel Filoche, Lucio Martinelli, Jacques Peretti, and Claude Weisbuch, “Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers,” Phys. Rev. B, 95, 144205, Apr. 2017
  25. Marcel Filoche, Marco Piccardo, Yuh-Renn Wu, Chi-Kang Li, Claude Weisbuch, and Svitlana Mayboroda, “Localization landscape theory of disorder in semiconductors I: Theory and modeling,” Phys. Rev. B, 95, 144204, Apr. 2017
  26. Jau-Jiun Huang, Lik-Ka Yun, Te-Jen Kung, Chi-Lin Chen, Jiun-Haw Lee, Yuh-Renn Wu, Tien-Lung Chiu, Pi-Tai Chou and Man-kit Leung*, “Networking hole and electron hopping paths by Y-shaped host molecules: promoting blue phosphorescent organic light emitting diodes,” J. Mater. Chem. C, 5, 3600~3608, Apr. 2017
  27. 11. Shin-Yi Ho, Chun-Hsun Lee, An-Jye Tzou, Hao-Chung Kuo, Yuh-Renn Wu, and JianJang Huang, “Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure,” IEEE Transactions on Electron Devices,, 64, 1505~1510, Apr. 2017
  28. Heng Li, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Chi-Kang Li, Chiao-Yun Chang, Yuh-Renn Wu, Tien-Chang Lu*, and Yu-Ming Chang*, “Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy,” Scientific Reports, 7, 45519, Mar. 2017
  29. H. T. Chen; C. Y. Su; C. G. Tu; Y. F. Yao; C. H. Lin; Y. R. Wu; Y. W. Kiang; C. C. Yang*, “Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-type Conductivity in a p-GaN/u-GaN Alternating-layer Nanostructure,” IEEE Transactions on Electron Devices, 64, 115~120, Jan. 2017
  30. Shuo-Fan Chen, Yuh-Renn Wu*, “Electronic Properties of MoS2 Nanoribbon under Strain Using Tight Binding Method,” Physica Status Solidi B: Basic Solid State Physics, 254, 2, 1600565, Jan. 2017
  31. Chih-Hsien Cheng, Tzu-Wei Huang, Chung-Lun Wu, Mu Ku Chen, Cheng Hung Chu, Yuh-Renn Wu, Min-Hsiung Shih, Chao-Kuei Lee, Hao-Chung Kuo, Din-Ping Tsai, and Gong-Ru Lin*,, “Transferring the Bendable Substrateless GaN LED Grown on Thin C-rich SiC Buffer Layer to Flexible Dielectric and Metallic Plates,” J. Mater. Chem.C, 5, 607~617, Jan. 2017
  32. Chao-Wei Wu and Yuh-Renn Wu*, “Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure,” AIP Advances, 6, 115201, Oct. 2016
  33. Kuan-Ying Ho, Chi-Kang Li, Hong-Jhang Syu, Yi Lai, Ching-Fuh Lin and Yuh-Renn Wu*,, “Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model,” J. Appl. Phys., 120, 215501, Oct. 2016
  34. Chi-Kang Li, Chen-Kuo Wu, Chung-Cheng Hsu, Li-Shuo Lu, Heng Li, Tien-Chang Lu and Yuh-Renn Wu*, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Advances, 6, 055208-1~055208-10, May 2016
  35. Xinhui Chen, Kuan-Ying Ho, and Yuh-Renn Wu*, “Modeling and Optimization of p-AlGaN super lattice structure as the p-contact and transparent layer,” Optics Express, 23, 32367~32376, Dec. 2015
  36. Chih-Chien Pan*, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh-Renn Wu, Chris Van de Walle, Shuji Nakamura, Steven P. DenBaars, “High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electronics Letters, 51, 15, 1187~1189, Jul. 2015
  37. David A. Browne, Baishakhi Mazumder, Yuh-Renn Wu, and James S. Speck, “Electron Transport in Unipolar InGaN/GaN Multiple Quantum Well Structures Grown by NH3 Molecular Beam Epitaxy,” J. Appl. Phys., 117, 185703-1~p185703-9, May 2015
  38. H.H.Wang, J. S. Tian, C. Y. Chen, H. H. Huang, Y. C. Yeh, P. Y. Deng, L. Chang ; Y. H. Chu, Y. R. Wu, J. H. He*, “The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO,” IEEE Photonics Journal, 7, 2, 1~8, Apr. 2015
  39. Finella Lee, Liang-Yu Su, Chih-Hao Wang, Yuh-Renn Wu, and Jianjang Huang*, “Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors,” IEEE Electron Device Letters, 36, pp232-234, Mar. 2015
  40. Chen-Kuo Wu, Chi-Kang Li, and Yuh-Renn Wu*, “Percolation transport study in nitride based LEDby considering the random alloy fluctuation,” Journal of Computational Electronics, 14, 416~424, Mar. 2015
  41. Hsiang-Wei Li, Yu-Feng Yin, Chen-Yu Chang, Chen-Hung Tsai, Yen-Hsiang Hsu, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, and Jian Jang Huang*, “Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals,” IEEE Journal of Quantum Electronics, 50, pp951-956, Dec. 2014
  42. W. C. Lai*, M. H. Ma, B. K. Lin, B. H. Hsieh, Y. R. Wu, and J. K. Sheu, “Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode,” Optics Express,, 22, A1853-A1861, Nov. 2014
  43. K. Y. Lai, G. J. Lin, Yuh-Renn Wu, Meng-Lun Tsai, and Jr-Hau He*, “Efficiency dip observed with InGaN-based multiple quantum well solar cells,” Optics Express,, 22, pp A1753-A1760, Oct. 2014
  44. Yuji Zhao, Robert M. Farrell, Yuh-Renn Wu, and James S. Speck*, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. –Selected Topics in Applied Physics, 53, p100206, Sept. 2014
  45. Chao-Wei Wu and Yuh-Renn Wu*, “Thermoelectric characteristic of the rough InN/GaN core-shell nanowires,” J. Appl. Phys., 116, 103707, Sept. 2014
  46. Tsung-Jui Yang, Ravi Shivaraman, James S. Speck, and Yuh-Renn Wu*, “The Influence of Random Indium Alloy fluctuations in Indium Gallium Nitride Quantum Wells on the Device Behavior,” J. Appl. Phys, 116, p113104, Sept. 2014
  47. 6. Hui-Hsin Hsiao, Hung-Chun Chang, and Yuh-Renn Wu*, “Design of Anti-ring Back Reflectors for Thin-Film Solar Cells Based on Three-Dimensional Optical and Electrical Modeling,” Appl. Phys. Lett., 105, 061108, Aug. 2014
  48. Erin C. H. Kyle, Stephen W. Kaun, Peter G. Burke, Feng Wu, Yuh-Renn Wu, and James S. Speck, “High-electron-mobility GaN grown on free standing GaN templates by ammonia-based molecular beam epitaxy,” J. Appl. Phys., 115, 193702, May 2014
  49. Yen Chou, Hsiang-Wei Li, Yu-Feng Yin, Yu-Ting Wang, Yen-Chen Lin, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, and Jian Jang Huang*, “Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals,” J. Appl. Phys., 115, p193107, May 2014
  50. Chun-Yao Lee, Chun-Ming Yeh, Yung-Tsung Liu, Chia-Ming Fan, Chien-Fu Huang, and Yuh-Renn Wu*, “The optimization study of textured a-Si:H solar cells,” J. Renewable and Sustainable Energy, 6, p023111, Apr. 2014
  51. Chi-Kang Li, Maarten Rosmeulen, Eddy Simoen, and Yuh-Renn Wu*, “Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs,” IEEE Trans Electron Dev., 61, pp511-517, Feb. 2014
  52. Yuji Zhao, Feng Wu, Tsung-Jui Yang, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, “Atomic-scale nanofacet structure in semipolar (20-2-1) and (20-21) InGaN single quantum wells,” Appl. Phys. Express, 7, p025503, Feb. 2014
  53. Jheng-Han Lee, Zong-Ming Wu, Yu-Min Liao, Yuh-Renn Wu, Shih-Yen Lin, and Si-Chen Lee*, “The Operation Principle of the Well in Quantum Dot stack Infrared Photodetector,” J. Appl. Phys., 114, 244504, Dec. 2013
  54. Chi-Kang Li, Po-Chun Yeh, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu*, “Scaling performance of Ga2O3/GaN nanowire field effect transist,” J. Appl. Phys., 114, 163706, Oct. 2013
  55. Yang Kuo, Wen-Yen Chang, Horng-Shyang Chen, Yuh-Renn Wu, C. C. Yang, and Yean-Woei Kiang*, “Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode,” J. Opt. Soc. Am. B, 30, 10, 2599-2606, Oct. 2013
  56. Kai-Lun Chi, Shu-Ting Yeh, Yu-Hsiang Yeh, Kun-Yan Lin, Jin-Wei Shi*, Yuh-Renn Wu*, M. L. Lee, and J.-K. Sheu, “GaN-Based Dual Color Light-Emitting-Diodes with P-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities,” IEEE Trans Electron Dev., 60, pp2821-2826, Sept. 2013
  57. J. Pal, M. A. Migliorato*, C.-K. Li, Y.-R. Wu, B. G. Crutchley, I. P. Marko, and S. J. Sweeney, “Enhancement of Efficiency of InGaN-based LEDs through Strain and Piezoelectric Field Management,” Journal of Applied Physics, 114, 073104, Aug. 2013
  58. Hsun-Wen Wang, Pei-Chen Yu*, Yuh-Renn Wu*, Hao-Chung Kuo, and Shiuan-Huei Lin, “ Projected efficiency of polarization matched p-InxGa1-xN/i-InyGa1-yN/n-GaN double heterojunction solar cells,” IEEE Journal of photovoltaic, 3, pp985-990, Jul. 2013
  59. D. N. Nath, Z. C. Yang, C.-Y. Lee, P.S. Park, Y.-R Wu, and S. Rajan, “Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures,” Applied Physics Letter, 103, 022102, Jul. 2013
  60. Yoshinobu Kawaguchi, Chia-Yen Huang, Yuh-Renn Wu, Yuji Zhao, Steven P. DenBaars, and Shuji Nakamura, “Semipolar (20-21) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage,” JJAP, 52, 08JC08, Jun. 2013
  61. Chin-Yi Chen and Yuh-Renn Wu*, “Studying the Short Channel Effect in the Scaling of the AlGaN/GaN Nanowire Transistors,” J. Appl. Phys., 113, 214501, Jun. 2013
  62. Chi-Kang Li, Hung-Chih Yang, Ta-Cheng Hsu, Yu-Jiun Shen, Ai-Sen Liu, and Yuh-Renn Wu*, “Three Dimensional Numerical Study on the Effciency of a Core-shell InGaN/GaNMultiple Quantum Well Nanowire light-emitting diodes,” J. Appl. Phys., 113, 183104, May 2013
  63. Liang-Yi Chen, Chi-Kang Li, Jin-Yi Tan, Li-Chuan Huang, Yuh-Renn Wu and JianJang Huang, “On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays,” IEEE Journal of Quantum Electronics, 49, 2, pp224-231, Feb. 2013
  64. Pradeep Senanayake*, Chung-Hong Hung, Alan Farrell, David A. Ramirez, Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, and Diana L. Huffaker, “Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors,” Nano Letters, 12 (12), 6448-6452, Dec. 2012
  65. Jeng-Wei Yu, Po-Chun Yeh, Sung-Li Wang, Yuh-Renn Wu, Ming-Hua Mao, Hao-Hsiung Lin, and Lung-Han Peng, “Short channel effects on gallium nitride/gallium oxide nanowire transistors,” Applied Physics Letter, 101, 183501, Oct. 2012
  66. Jordan Reed Lang, Nathan G. Young, Robert M. Farrell, Yuh-Renn Wu, and James S. Speck, “Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells,” Appl. Phys. Lett., 101, 181105, Oct. 2012
  67. Ting-Gang Chen, Peichen Yu*, Shih-Wei Chen, Feng-Yu Chang, Bo-Yu Huang, Yu-Chih Cheng1, Jui-Chung Hsiao2, Chi-Kang Li and Yuh-Renn Wu, “Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics,” Prog. Photovolt: Res., Published on line, Oct. 2012
  68. Ingrid L. Koslow*, Matthew T. Hardy, Po Shan Hsu, Po-Yuan Dang, Feng Wu, Alexey Romanov, Yuh-Renn Wu, Erin C. Young, Shuji Nakamura, James S. Speck, and Steven P. DenBaars, “(11-22) Long Wavelength Light Emitting Diodes Grown on Stress Relaxed InGaN Buffer Layers,” Applied Physics Letter, 101, 121106, Sept. 2012
  69. Chang-Pei Wang and Yuh-Renn Wu*, “Study of Optical Anisotropy in Nonpolar and Semipolar AlGaN Quantum Well Deep Ultraviolet Light Emission Diode,” Journal of Applied Physics, 112, 033104, Aug. 2012
  70. Yuh-Renn Wu*, Ravi Shivaraman, Kuang-Chung Wang, and James S. Speck, “Analyzing Physical Properties of InGaN Multiple Quantum Well LEDs from Nano Scale Structures,” Applied Physics Letter, 101, 083505, Aug. 2012
  71. Yoshiu Kawaguchi*, Chia-Yen Huang, Yuh-Renn Wu, Qimin Yan, Chih-Chien Pan, Yuji Zhao, Shinichi Tanaka, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, Steven P. DenBaars, and Shuji Nakamura, “Influence of polarity on Carrier Transports of Semipolar Multiple-Quantum-Well (20-2-1) and (20-21) Light-Emitting Diodes,” Appl. Phys. Lett., 100, 231110, Jun. 2012
  72. David Browne*, Micha Fireman, Baishakhi Mazumder, Leah Kuritzky, Yuh-Renn Wu, and James Speck, “Vertical Transport through AlGaN Barriers in Heterostructures Grown by Ammonia Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition,” Semicond. Sci. Technol., 32, 025010, Feb. 2012
  73. Chi-Kang Li and Yuh-Renn Wu, “Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs,” IEEE Trans Electron Dev., 59, 400-407, Feb. 2012
  74. Jeng-Wei Yu , Chi-Kang Li , C. Y. Chen , Yuh-Renn Wu , Li-Jen Chou, and Lung-Han Peng*, “Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor,” Appl. Phys. Lett., 99, 152108, Oct. 2011
  75. H.-A. Chin, I-C. Cheng*, C.-K. Li, Y.-R. Wu, J. Z. Chen, W.-S. Lu, W.-L. Lee,, “The electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures,” Journal of Physics D: Applied Physic, 44, 455101, Oct. 2011
  76. Hung-Hsun Huang, I-Lin Lu and Yuh-Renn Wu*, “Study of thermoelectric properties of indium nitride nanowire,” Physica status solidi (a), 208, pp1562-2565, Jun. 2011
  77. Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang*, “Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays,” Optics Express, 19, pp. A900-A907, Jun. 2011
  78. Yu-Hsuan Sun, Yun-Wei Cheng, Szu-Chieh Wang, Ying-Yuan Huang, Chun-Hsiang Chang, Sheng-Chieh Yang, Liang-Yi Chen, Min-Yung Ke, Chi-Kang Li, Yuh-Renn Wu, and JianJang Huang*, “Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by P-type GaN Surface Texturing,” Electron Dev. Lett, 32, pp182-184, Feb. 2011
  79. I-Lin Lu, Yuh-Renn Wu*, and Jasprit Singh,, “A Study of the Role of Dislocation Density, Indium Composition on the Radiative Efficiency in InGaN/GaN Polar and Nonpolar LEDs using Drift-diffusion Coupled with a Monte Carlo Method,” J. Appl. Phys., 108, 124508, Dec. 2010
  80. Po-Yuan Dang and Yuh-Renn Wu, “Optical Polarization Anisotropy of Tensile Strained InGaN/AlInN Quantum Wells for TM Mode Lasers,” J. Appl. Phys., 108, 083108, Oct. 2010
  81. Huei-Min Huang, Hung-Hsun Huang, Yuh-Renn Wu*, and Tien-Chang Lu*, “Abnormal polarization switching phenomenon in a-plane AlxGa1-xN,” Optics Express, V18, No. 21, pp21743-21749, Oct. 2010
  82. Huai-An Chin, I-Chun Cheng*, Chih-I Huang , Yuh-Renn. Wu, Wen-Sen Lu, Wei-Li Lee, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, “Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process,,” Journal of Applied Physics, 108, 054503, Sept. 2010
  83. Cheng-Yu Chang and Yuh-Renn Wu, “Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells,” IEEE Journal of Quantum Electronics, 46, 884-889, Jun. 2010
  84. T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., 96, 211108, 96, 211108, May 2010
  85. Chih-I Huang, Huai-An Chin, Yuh-Renn Wu*, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, “Mobility Enhancement of Polycrystalline MgZnO/ZnO Thim Film Layer with Modulation Doping and Polarization Effect,” IEEE Trans Electron Dev, 57, pp696-703, Mar. 2010
  86. Hung-Hsun Huang and Yuh-Renn Wu, “Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well,” J. Appl. Physics, 107, 053112, Mar. 2010
  87. Kun-Mao Pan, Yun-Wei Cheng, Liang-Yi Chen, Ying-Yuan Huang, Min-Yung Ke, Cheng-Pin Chen, Yuh-Renn Wu and JianJang Huang, “Polarization dependent sidewall light diffraction of LEDs surrounded by nanorod arrays,” IEEE Photonics Technology Letters,, 21, 1863-1865, Oct. 2009
  88. Hung-Hsun Huang and Yuh-Renn Wu, “Study of Polarization Properties of Light Emitted from a-plane InGaN/GaN Quantum Well-based Light Emitting Diodes,” Journal of Applied Physics, 106, 023106, Jul. 2009
  89. Yuh-Renn Wu, Chinghua Chiu, Cheng-Yu Chang, Peichen Yu, and Hao-Chung Kuo, “Size-Dependent Strain Relaxation and Emission Characteristics of InGaN/GaN Nanorod Light Emitting Diodes,” IEEE Journal of Selected Topics in Quantum Electronics., 15, pp1226-1233, Jul. 2009
  90. Yuh-Renn Wu, Yih-Yin Lin, and Jasprit Singh, “Electronic and Optical Properties of InGaN Quantum Dot based Emitters: Comparison with Quantum Well Devices,” J. Appl. Phys., 105, 013117, Jan. 2009
  91. Yuh-Renn Wu, Peichen Yu, C.H. Chiu, Cheng-Yu Chang , and H.C. Kuo, “Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar,” proceeding of SPIE,, Vol 7058, 70580G, Aug. 2008
  92. Peichen Yu , C. H. Chiu , Yuh-Renn Wu, H. H. Yen, J. R. Chen, C. C. Kao, Han-Wei Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Strain Relaxation Induced Micro-Photoluminescence Characteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling,” Appl. Phys. Lett., 93, 081110, Aug. 2008
  93. Yuh-Renn Wu and John M. Hinckley and Jasprit Singh, “Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption,” Journal of Electronic Materials, 37, 578-584, May 2008
  94. C. Y. Liu, A. Datta, N. W. Liu, Y. R. Wu, H. H. Wang, T. H. Chuang, and Y. L. Wang, “Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum,” J. Vac. Sci. Technol. B, 26, 651-654, 2008
  95. J. W. Chung, X. Zhao, Y.-R. Wu, J. Singh, and T. Palacios, “Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors,” Appl. Phys. Lett., 92, 093502, 2008
  96. S. Y. Yang and Q. Zhan and P. L. Yang and M. P. Cruz and Y. H. Chu and R. Ramesh and Y-. R. Wu and J. Singh and W. Tian and D. G. Schlom, “Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures,” Appl. Phys. Lett., 91, 022909, Jul. 2007
  97. Yuh-Renn Wu, Jasprit Singh, “Transient Study of Self-heating Effects in AlGaN/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance,” J. Appl. Phys., 101, p113712, Jun. 2007
  98. Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh, “Device Scaling Physics and Channel Velocities in AlGaN-GaN HFETs: Velocities and Effective Gate Length,” IEEE Trans Electron Dev, 53, 588-593, Apr. 2006
  99. Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh, “ Sources of Transconductance Collapse in III-V nitrides - Consequences of velocity-field relations and source-gate design,” IEEE Trans Electron Dev, 52, 1048-1054, Jun. 2005
  100. Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh, “Velocity Overshoot Effects and Scaling Issues in III-V Nitrides,” IEEE Trans Electron Dev., 52, 311-316, Mar. 2005
  101. Yuh-Renn Wu and Jasprit Singh, “Polar Heterostructure for Multi-function Devices: Theoretical Studies,” IEEE Trans Electron Dev., 52, 284-293, Feb. 2005
  102. Yuh-Renn Wu and Jasprit Singh, “Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors,” Appl. Phys. Lett., 85, 1223-1225, Aug. 2004
  103. Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh, “Examination of LiNbO3 / nitride heterostructures,” Solid State Electron, 47, 2155-2159, Dec. 2003
  104. Yuh-Renn Wu, Madhusudan Singh and Jasprit Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys., 94, 5826-5831, 2003
  105. A. Datta, Yuh-Renn Wu, Y. L. Wang, “Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment,” Physical Review B, 63, 125407, 2001
  106. A. Datta, Yuh-Renn Wu, Y. L. Wang, “Gas-assisted focused-ion-beam lithography of a diamond (100) surface,” Appl. Phys. Lett., 75, 2677-2679, 1999

Conference & proceeding papers:

  1. Hui-Hsin Hsiao, Hung-Chun Chang, and Yuh-Renn Wu*, “Design of Nano-pattern Reflectors for Thin-Film Solar Cells Based on Three-Dimensional Optical and Electrical modeling,” SPIE Photonic West, San Francisco, CA, Feb.7-12, 2015, Feb. 2015
  2. Xinhui Chen and Yuh-Renn Wu, “Numerical study of current spreading and light extraction in deep UV light-emitting diode,” SPIE Photonic West, San Francisco, CA, Feb.7-12, 2015, Feb. 2015
  3. Chen Kuo Wu, James S. Speck, and Yuh-Renn Wu*, “Analysis of Electron Percolation in the RandomAlloy AlGaN Barrier Layer,” 10th International Symposium on Semiconductor Light Emitting Devices, Kaohsiung, Taiwan, Dec. 14-19, 2014, Dec. 2014
  4. Chung-Cheng Hsu and Yuh-Renn Wu*, “3D Finite Element Strain Analysis of InGaN Quantum Well with Indium Fluctuations,” 10th International Symposium on Semiconductor Light Emitting Devices, Kaohsiung, Taiwan, Dec. 14-19, 2014, Dec. 2014
  5. Chao-Wei Wu and Yuh-Renn Wu*, “Thermoelectric Characteristic of the Rough InN/GaN CoreShell Nanowire,” 2014 International Workshop on nitride semiconductor, Wroclaw, Poland, Aug.24-29, 2014, Oct. 2014
  6. Hui-Hsin Hisao, Hung-Chun Chang, and Yuh-Renn Wu*, “Design of Light Trapping Nanopatterned Solar Cells Based on Three Dimensional Optical and Electrical Modeling,” 14th International Conference on Numerical Simulation of Optoelectronic Devices, Palma de Mallorca, Spain, Sep. 1-4, 2014., Sept. 2014
  7. Tsung-Jui Yang, Yen-Chun Lin, James S. Speck, and Yuh-Renn Wu*, “3D analysis of Random Alloy Fluctuation in InGaN Quantum Well to the Carrier Transport, Tunneling, and Efficiency,” 2014 International Workshop on nitride semiconductor, Wroclaw, Poland, Aug.24-29, 2014, Aug. 2014
  8. Chi-Kang Li, Maarten Rosmeulen, Eddy Simoen, and Yuh-Renn Wu*, “Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs by Modulation of Transparent Conducting Layer,” WLED-5,, Jeju, Korea, June 1-5, 2014, Jun. 2014
  9. 8. David Browne, Baishakhi Mazumder, Yuh-Renn Wu and James S. Speck, “Investigation of Electron Transport through InGaN Quantum Well Structures,” 14th Electronic Materials Conference, Santa Barbara, USA, June 25-27, 2014, Jun. 2014
  10. Erin Kyle, Stephen Kaun, Yuhrenn Wu, and James Speck,, “Dislocation-Related Scattering in High Mobility GaN Grown by Ammonia-Based Molecular Beam Epitaxy,” 14th Electronic Materials Conference, Santa Barbara, USA, June 25-27, 2014, Jun. 2014
  11. Chun-Yao Lee, Hui-Hsin Hsiao, Chun-Ming Yeh, Chien-Fu Huang, Yung-Tsung Liu, Chia-Ming Fan, and Yuh-Renn Wu, “The optimization of textured a-Si:H solar cells with a fully three-dimensional simulation,” SPIE Photonic West, San Francisco, CA, Feb. 2014
  12. Tsung-Jui Yang, Jim. Speck, and Yuh-Renn Wu, “Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model,” SPIE Photonic West, San Francisco, CA, Feb. 2014
  13. Da-Wei Lin, Yuh-Renn Wu, Yu-Ting Kang, Shu-ting Yeh, Yu-Lin Tsai, Gou-Chung Chi, Hao-Chung Kuo, “Analyzing the correlation between nanoscale indium fluctuation in multiple quantum wells and efficiency droop behavior for InGaN-based light-emitting diodes grown on GaN substrate and sapphir,” SPIE Photonic West, San Francisco, CA, Feb. 2014
  14. Yuh-Renn Wu, “Influences of nanoscale indium fluctuation in the InGaN quantum well LED to the carrier transport, radiation efficiency, and droop effect,” 2013 EMN Fall Meeting, Orlando, FL, Dec. 2013
  15. Yuh-Renn Wu, Shu-ting Yeh, Da-Wei Lin, Chi-kang Li, Hao-Chung Kuo, and James S. Speck, “Influences of Indium Fluctuation to the Carrier Transport, Auger Recombination, and Efficiency Droop,” 13th International Conference on Numerical Simulation of Optoelectronic Devices, Vancouver, Canada,, Aug. 2013
  16. Chi-Kang Li and Yuh-Renn Wu, “Three Dimensional Numerical Study on the Efficiency of a Core-shell InGaN/GaN Multiple Quantum Well Nanowire LED,” 13th International Conference on Numerical Simulation of Optoelectronic Devices, Vancouver, Canada,, Aug. 2013
  17. Digbijoy N. Nath, Zhichao Yang, Pil S. Park, Chun Y. Lee, Yuh R. Yu, and Siddharth Rajan, “Unipolar Vertical Transport Characteristics in III-Nitrides,” The 10th International conferences on nitride semiconductor, National Harbor, MD, Aug. 2013
  18. David Browne, Yuh-Renn Wu, and James S. Speck, “Investigation of Electron Transport through Unipolar InGaN Quantum Well Structures,” The 10th International conferences on nitride semiconductor, National Harbor, MD, Aug. 2013
  19. Shu-Ting Yeh, Kai-Lun Chi , Jin-Wci Shi, and Yuh-Renn W, “Numerical Study on the Optimization of a GaN-Based Dual Color Light-Emitting Diode with P-Type Insertion Layer for Balancing Two-Color Intensities,” The 10th International conferences on nitride semiconductor, National Harbor, MD, Aug. 2013
  20. Shu-Ting Yeh and Yuh-Renn Wu, “Study of Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well Under Different Strain Conditions,” CLEO-PR, Kyoto, Japan, Jun. 2013
  21. Yu-Min Liao, Hsiao-Lun Wang, Yuh-Renn Wu*, and Chao-Hsin Wu, “The Dependence of Base Dynamics and Current Gain in the InGaAs/GaAs Light Emitting Transistors,” 40th international symposium on compound semiconductor, Kobe, Japan, May 2013
  22. Pradeep N. Senanayake, Chung-Hong Hung, Alan Farrell, David A. Ramirez, Joshua N. Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed Hayat, and Diana L. Huffaker, “Nanopillar optical antenna avalanche detectors for the development of single photon detectors,” SPIE Photonic West, San Francisco, CA, Feb. 2013
  23. Pei-Wen Lin, Sih-Chen Lu, Yu-Min Liao, Chin-Yi Chen, Yuh-Renn Wu, Yun-Chorng Chang, “Economic fabrication of optoelectronic devices with novel nanostructure,” SPIE Photonic West, San Francisco, CA, Feb. 2013
  24. Chun-Yao Lee, Huai-Te Pan, Yu-Chih Cheng, Yuh-Renn Wu, Peichen Yu, “Optical and electrical characteristics of silicon nanocone: Polymer hybrid heterojunction solar cells,” SPIE Photonic West, San Francisco, CA, Feb. 2013
  25. Yuh-Renn Wu*, Ravi Shivaraman, Kuang-Chung Wang, Chih-Chien Pan, and James S Speck, “Predicting Physical Properties of InGaN LEDs from Atomic Scale Structure,” International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012
  26. Chia-Yen Huang, Yuji Zhao, Qimin Yan, Yoshinobu Kawaguchi, Yu-Renn Wu, Daniel F. Feezell, Chris G. van de Walle, James S. Speck, Steven P Denbaars, and Shuji Nakamura, “Carrier transports in semipolar multiple-quantumwells light-emitting diodes,” International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012
  27. Ingrid L. Koslow, Matthew T. Hardy, Po shan Hsu, Michael Cantore, Stuart Brinkley, Po-Yuan Dang, Yuh-Renn Wu, Erin C. Young, Feng Wu, Alexey Romanov, Shuji Nakamura, Steve, P. Denbaars, and James S. Speck, “Semipolar LongWavelength Light Emitting Diodes Grown on Stress Relaxed InGaN Buffer Layers,” International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012
  28. Jeng-Wei Yu, Chi-Kang Li, Po-Chun Yeh, Yuh-Renn Wu, and Lung-Han Peng*, “Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz,” International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012
  29. Chi-Kang Li, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu*, “Study on 50nm Gate Length of Ga2O3/GaN Nanowire Field Effect Transistor,” International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012
  30. Chi-Kang Li, Hung-Chih Yang, Ta-Cheng Hsu, Yu-Jiun Shen, Ai-Sen Liu, and Yuh-Renn Wu*, “Study on Electrical Properties of a Coreshell InGaN/GaN Multiple Quantum Wells Nanowire LED,” International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012
  31. Chin-Yi Chen and Yuh-Renn Wu*, “Studies of Scaling Issue in Tri-gate AlGaN/GaN Nanowire Transistors,” Electronic Materials Conference, University Park, PA, USA, Jun. 2012
  32. Yu-Chih Cheng, Ting-Gang Chen, Feng-Yu Chang, Bo-Yu Huang, Huai-Te Pan, Peichen Yu, Chi-Kang Li, and Yuh-Renn Wu, “Fabrication and Modeling of Large-Scale Silicon Nanowire Solar Cells for Thin-Film Photovoltaics,” 38th IEEE Photovoltaic Specialists Conference, Austin, TX, Jun. 2012
  33. Ming-Han Hsieh, Yuh-Renn Wu*, and Jasprit Singh, “The Effect of Tailoring Electron/Hole Blocking Layers on the Photovoltaic Performance of the Single-Junction Solar Cells,” 38th IEEE Photovoltaic Specialists Conference, Austin, TX, Jun. 2012
  34. Ming-Han Hsieh and Yuh-Renn Wu*, “Numerical Modeling of InxGa1-xN/Silicon Multijunction Tandem Solar Cell,” 38th IEEE Photovoltaic Specialists Conference, Austin, TX, Jun. 2012
  35. Kuang-Chung Wang and Yuh-Renn Wu*, “Transition Rate in the InGaN Quantum Dot Intermediate-Band Solar Cell,” 38th IEEE Photovoltaic Specialists Conference, Austin, TX, Jun. 2012
  36. Yuh-Renn Wu*, Chang-Pei Wang, Kuang-Chung Wang, and James S. Speck, “Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs,” CLEO: 2012, San Jose, CA, May 2012
  37. Chang-Pei Wang and Yuh-Renn Wu*, “Study of Optical Anisotropy of c-plane/m-plane Ultra-violet LED and Laser Diode by k.p Method,” CLEO: 2012, San Jose, CA, May 2012
  38. Kuang-Chung Wang and Yuh-Renn Wu*, “Intersubband and intrasubband transition in InGaN quantum dot for solar cell application,” SPIE Photonic West, San Francisco, CA, Jan. 2012
  39. Chi-Kang Li and Yuh-Renn Wu*, “Study of enhancement for the current spreading effect in vertical GaN/InGaN LEDs,” SPIE Optics + Photonics, 8123-61, San Diego, Aug. 2011
  40. Yuh-Renn Wu, Chi-Kang Li, Chao-wei Wu, and Jasprit Singh, “Study of Carrier Leakage, Hot Carriers, and Radiative Efficiency of InGaN LEDs with Monte Carlo Method,” International Conference on Nitride Semiconductors, Glasgow, UK, Jul. 2011
  41. Guan-Jung Lai, Chi-Kang Li, and Yuh-Renn Wu, “Study of Light Extraction Efficiency of Vertical InGaN Light Emitting Diodes with Different Textured Surfaces and Electrode Contacts,” International Conference on Nitride Semiconductors, Glasgow, UK, Jul. 2011
  42. Chi-Kang Li, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu*, “Scaling Performance Study of Ga2O3/GaN Nanowire Field Effect Transistor with 3D Finite Element Solver,” Asian-pacific wide bandgap workshop (APWS), Toba, Japan, May 2011
  43. Yuh-Renn Wu*, Chi-kang Li, I-Lin Lu, and Jasprit Singh, “Study of Vertical and Lateral Carrier Dynamic in the InGaN/GaN Quantum Well LEDs for the, Defect Density, Carrier Leakage, and Hot Electron Effect with Monte Carlo Method,” Asian-pacific wide bandgap workshop (APWS),, Toba, Japan, May 2011
  44. Hung-Hsun Huang and Yuh-Renn Wu, “Thermoelectric properties of InGaN/GaN superlattice,” MRS 2011 Spring Meeting, San Francisco, Apr. 2011
  45. Chi-Kang Li and Yuh-Renn Wu*, “Current spreading effect in vertical GaN/InGaN LEDs,” SPIE Photonic West, 2011, San Francisco, California, United States,, Jan. 2011
  46. Jeng-Wei Yu, Yuh-Renn Wu, Jian-Jang Huang, and Lung-Han Peng*,, “100GHz depletion-mode Ga2O3/GaN single nanowire MOSFET by photo-enhanced chemical oxidation method,” International Electron Devices Meeting (IEDM) 2010, San Francisco, CA., Dec. 2010
  47. Yen-Chun Lee, Hung-Hsun Huang, Yuh-Renn Wu, and Peichen Yu*,, “Manipulative Polarization of a-plane InGaN/GaN Photonic Crystals for Enhanced Spontaneous Emission,” 16th Microoptics conferece(MOC),, Hsinchu, Taiwan, Nov. 2010
  48. Jeng-Wei Yu, Yuh-Renn Wu, Jian-Jang Huang, and Lung-Han Peng*,, “75GHz Ga2O3/GaN Single Nanowire Metal-Oxide-Semiconductor field-effect Transistors,” IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2010, Monterey, CA, Oct. 2010
  49. Hung-Hsun Huang and Yuh-Renn Wu*,”, “Study of Phonon Properties of Indium Nitride”≈,” Study of Phonon Properties of Indium Nitride”, International Workshop of Nitride Semiconductor (IWN),, Tampa, FL, united states, Sept. 2010
  50. I-Lin Lu, Yuh-Renn Wu*, and Jasprit Singh, “Study the role of dislocation, indium composition, and radiative efficiency on the InGaN/GaN LEDs with Monte Carlo method,” Study of Phonon Properties of Indium Nitride”, International Workshop of Nitride Semiconductor (IWN),, Tampa, FL., Sept. 2010
  51. Yen-Chun Lee, Hung-Hsun Huang, Yuh-Renn Wu, and Peichen Yu, “Manipulative Polarization of a-plane InGaN/GaN Photonic Crystals for Enhanced Spontaneous Emission,” Manipulative Polarization of a-plane InGaN/GaN Photonic Crystals for Enhanced Spontaneous Emission, ), Tokyo, Japan, Sept. 2010
  52. Po-Yuan Deng, Hung-Hsun Huang, and Yuh-Renn Wu, “Study of Polarization Properties of Light Emitted from Tensile Strained InGaN/AlInN Quantum Well,” CLEO, 2010, San Jose, CA, May 2010
  53. I-Lin Lu, Yuh-Renn Wu*, John Hinckley, and Jasprit Singh, “Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency,” SPIE Photonic West, San Francisco, California, United States, Jan. 2010
  54. Yuh-Renn Wu* and Pei-Cheng Ku, “Nonpolar InGaN quantum dots for semiconductor quantum light sources,” SPIE Photonic West, San Francisco, California, United States, Jan. 2010
  55. Yuh-Renn Wu, Hung-Hsun Huang, Cheng-Yu Chang , and Chi-Kang Li, “Strain Engineering in InGaN/GaN Light Emitting Diodes,” Internal Workship of Physics on Semiconductor Devices, New Delhi, India, Dec. 2009
  56. Chi-Kang Li and Yuh-Renn Wu, “Three Dimensional Modeling of Junction Temperature and Current flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods,” The Second International Conference on White LEDs and Solid State Lighting, Taipei, 2009, Dec. 2009
  57. Po-Yuan Dang, Hung-Hsun Huang, and Yuh-Renn Wu, “Light Emission Polarization Properties of a Tensile strained InGaN/AlInN Quantum Well,” The Second International Conference on White LEDs and Solid State Lighting, Taipei, 2009, Dec. 2009
  58. C-Y. Yeh, I-C. Cheng, and Y.-R. Wu, “Investigation of polarization effect of array of cylindrical rods by Monte-Carlo method,” The Second International Conference on White LEDs and Solid State Lighting, Taipei, Taiwan, Dec. 2009
  59. Huai-An Chin, Chih-I Huang, Yuh-Renn Wu, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, “Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure.,” MRS 2009 Fall meeting, Boston, Dec. 2009
  60. Hung-Hsun Huang and Yuh-Renn Wu, “Study of Light Emission Polarization Properties of Strained inGaN Alloy Films on GaN Substrates With Different Growth Orientations,” 8th International Conference on Nitride Semiconductors, JeJu, Korea,, Oct. 2009
  61. Chi-Kang Li, Yuh-Renn Wu, and Jasprit Singh, “Modeling of Junction Temperature and Current flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods,” 13th Internal workshop on Computational Electronics 2009, Beijing, China., May 2009
  62. Chih-I Huang, Yuh-Renn Wu, I-Chun Cheng, Jian Z. Chen, Kuc-Chuang Chiu, and Tzer-Shen Lin, “Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method,” 13th Internal workshop on Computational Electronics 2009, Beijing, China, May 2009
  63. ChingHua Chiu, Peichen Yu, H. C. Kuo, T. C. Lu, S. C. Wang, C. Y. Chang, Y. R. Wu, “Strain Relaxation and Emission Characteristics of Size-Dependent InGaN/GaN Nanorod Arrays,” CLEO 09, May 31-June 5, Baltimore, USA., May 2009
  64. Cheng-Yu Chan g and Yuh-Renn Wu, “Analysis of Etching Depth Dependence of Emission Properties from InGaN/GaN Light Emitting Diodes with Nanohole Arrays: Roles of Strain Relaxation and Surface States,” CLEO 09, May 31-June 5, Baltimore, USA., May 2009
  65. 1. Hung-Hsun Huang and Yuh-Renn Wu, “Light Emission Polarization Properties of a-plane InGaN/GaN Quantum Wells,” CLEO 09, May 31-June 5, 2009, Baltimore, USA., May 2009
  66. Jason Gu, Mahak Khandelwal, Jacob Melby, Michael Steeves, Yuh-Renn Wu, Robert Lad, and Robert F. Davis,, “Mechanism of Interaction between Hydrogen and the Two-dimensional Electron Gas in AlGaN/GaN High Electron Mobility Transistors,” APS March meeting, Pittsburgh, Pennsylvania., Mar. 2009
  67. Jacob Melby, Jason Gu, Li Huang, Yuhrenn Wu, Lisa Porter, Robert Davis,, “Reduction of the Specific Contact Resistance in p-type GaN-based Devices via Polarization Doping,” APS march meeting, March 16–20, 2009, , Pittsburgh, Pennsylvania., Mar. 2009
  68. Hung-hsun Huang, and Yuh-Renn Wu, “Light Emission Polarization Properties of a-plane InGaN/GaN Quantum Wells,” APS march meeting, Pittsburgh, Pennsylvania., Mar. 2009
  69. Cheng-Yu Chang and, Yuh-Renn Wu, “Strain Relaxation, Barrier Width, and Surface Effects in InGaN/GaN Nanocolumn LEDs,” International conference on optics and photonics in Taiwan 2008, Taipei, Dec. 2008
  70. Hung-Hsun Huang and Yuh-Renn Wu, “Study of Light Emission Polarization Properties of A-Plane InGaN/GaN Quantum Wells,” International conference on optics and photonics in Taiwan 2008, Taipei, Dec. 2008
  71. Chi-Kang Li and, Yuh-Renn Wu, “Three-Dimensional Thermal Modeling of High Power LED Chips,” International conference on optics and photonics in Taiwan 2008, Taipei, Dec. 2008
  72. Chih-I Huang and Yuh-Renn Wu, “Mobility study of ZnO Transparent Conductive Oxides Layers with Monte Carlo Method,” Poster, International conference on optics and photonics in Taiwan 2008, Taipei, Dec. 2008
  73. Peichen Yu, Min-An Tsai, Ching-Hua Chiu, Hao-chung Kuo, and Yuh-Renn Wu, “Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling,” Optoelectronic Materials and Devices III , Hangzhou, China , Oct. 27, 2008, Hangzhou, China, Oct. 2008
  74. 9. J. F. Ihlefeld, Z-K. Liu, H. S. Craft, R. Collazo, S. Mita, Z. Sitar, J-P. Maria, Y-R. Wu, J. Singh, W. A. Doolittle, R. Ramesh, and D. G. Schlom, “Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band-gap semiconductors,” The 15th International Workshop on Oxide Electronics., Estes Park, Colorado., Sept. 2008
  75. Yuh-Renn Wu, Peichen Yu, C.H. Chiu, Cheng-Yu Chang , and H.C. Kuo, “Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar,” SPIE The eighth international conference on solid state lighting, proceeding of SPIE, San Deigo, CA, Aug. 2008
  76. Yuh-renn Wu, Yih-Yin Lin, and Jasprit Singh, “InGaN Light Emitters: A comparison of Quantum Dot and Quantum Well based devices,” Conference on Lasers and Electro-Optics, CLEO/QELS Poster Session III, San Jose, May 2008
  77. Yuh-renn Wu, John Hinckley, and Jasprit Singh, “Extraction of Transport Dynamics in AlGaN/GaN HFETs through Free Carrier Absorption,” Electronic Material Conference (EMC), Notre Dame, IN, Jun. 2007
  78. H. Eisele, Y-R. Wu, R. Kamoua, and G. I. Haddad, “High-Performance Negative Differential Resistance Oscillators and Combiners,” the Seventeenth International Symposium on Space Terahertz Technology, Pasadena, California, Mar. 2007
  79. Yuh-renn Wu and Jasprit Singh,, “How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies,” Device Research Conference, Penn State Unveristy, PA, Jun. 2006
  80. Madhusudan Sing, Yuh-Renn Wu, Tomas Palacios, Jasprit Singh, and Umesh Mishra, “Monte Carlo study of noise scaling in AlGaN / GaN HFETs,” PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27, V772, pp441-442, Flagstaff, Arizona, Jul. 2004
  81. Yuh-Renn Wu and Jasprit Sing, “Polar Heterostructure for Multi-function Devices: Theoretical Studies,” Device Research Conference, Notre Dame, IN, Jun. 2004
  82. Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh, “Velocity Overshoot Effects and Transit Times in III-V Nitrides HFETs: a Monte Carlo Study,” Device Research Conference, Notre Dame, IN, Jun. 2004
  83. Yuh-Renn Wu, Madhusudan Singh and, Jasprit Singh, “Gate leakage suppression and contact engineering in nitride heterostructures:,” Materials Research Society Fall Meeting, Mat. Res. Soc. Vol. 798:Y11.1 20, Boston, MA, Dec. 2003

Books:

  1. Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh, “Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors,” Springer, US, p111-158 pages, Oct. 2007, ISBN:ISBN-10: 0387368310 and ISBN-13: 978-0387368313