胡振國特聘教授的個人資料 - Profile of Jenn-Gwo Hwu

胡振國 Jenn-Gwo Hwu

國立臺灣大學電機工程學系 特聘教授
國立台灣大學電子工程學研究所教授
Distinguished Professor, Department of Electrical Engineering, National Taiwan University
Professor, Graduate Institute of Electronics Enginering, National Taiwan University

主要研究領域:

矽金氧半元件/超薄閘極氧化層製程技術/新型矽基元件/快速熱機台及製程/均勻度分析及應力控制/矽金氧半太陽電池及光感應器

Major Research Areas:

Si MOS Devices/Ultra-thin Gate Oxide Processes/Novel Si-based Devices/Rapid Thermal Processing-RTP /Uniformity Analysis and Stress Control/Si MOS Solar Cell and Photo Sensors

研究領域摘要:

主要研究方向為矽基材料上之金氧半(MOS)元件，尤其是有關超薄閘極絕緣層之研發。

利用純水中加上電場技術，將超薄SiO2 (< 2.5 nm)不均勻處予以自動補償，使電特性改善，漏流降低;利用超薄金屬鋁之液相氧化，經由電場及時間之準確控制，可使氧化膜形成高介電係數氧化鋁，同時在界面形成適當之SiO2層，達到低成本高品質之新型高介電係數閘極絕緣層開發;利用超薄氧化層MOS(p)元件於正偏壓下電流飽和之特性，製作溫度感測器，可整合於先進IC製程，監控電路溫度變化，靈敏度可達近2V/oC;利用超薄氧化層MOS(p)元件於正偏壓下電流飽和之特性，作為晶格表面受到應力施加情形之感測，得知晶圓之應力分布，及元件受應力之衰退機制;利用快速熱(RTP)及流場之控制，可得不同熱應力下之元件特性，提供有效之應力研究環境，並改善應力均勻度;在RTP中晶圓承接台及上方加上不同之材料，可得較佳之溫度分布;利用自製之重覆脈衝加熱(RSO)技術，可得較佳之超薄氧化層後厚度均勻度;利用H2SiF6溶液於電場下快速成長室溫氧化層，可得低成本MOS太陽電池，效率可達10 %;利用MOS元件之C-V深空乏特性，分析不均勻分布;利用邊緣高電場效應，製作高靈敏光偵測器;利用MOS之I-V微分特性，分析超薄氧化層厚度及不均勻分布;利用雙MIS穿隧二極體耦合特性製作類電晶體及記憶體。

    研究以實作為主，結合精準之I-V及C-V量測得知元件特性，經分析解釋得知原理並進行改善，進而研發新型元件，提供學術界及業界參考。

Research Summary:

The major research topics are on the Si Metal-Oxide- Semiconductor (MOS) devices, especially on the study of ultra-thin gate oxides.

     Using the compensation of anions through ultra-thin oxides via the field stress in D.I. water, the oxide will become more uniform and less leaky.  By suitably controlling anodization time and field, one can obtain cost effective high-k Al2O3 by the oxidation of thin Al film.  Using the saturation characteristic of I-V curve of MOS(p) devices, one can detect the temperature and stress distribution within the wafer.  By adding suitable susceptors and cover quartz on wafer, one can control the temperature and flow distribution in RTP, and therefore the uniformity of oxide thickness.  Using anodization in H2SiF6 solution, one can prepare room temperature MOS solar cells with efficiency close to 10 %.  Analysis of the lateral non-uniformity in MOS structure by examining the deep depletion behavior in C-V curves.  High sensitive photo sensors by using the enhanced fringing field effect of MOS structure at edge.  Determination of the thickness of ultra-thin oxide and examining the non-uniformity property in it by analyzing the derivative of the I-V curve of MOS structure. Transistor and memory devices by utilizing the coupling effect in concentric MIS tunneling diodes.

     Experiments are essential in the study of devices.  From measurements and analyses, devices’ characteristics are explained and novel devices are proposed.

 

 

Photo of Jenn-Gwo Hwu

代表性著作 Selected Publication

  1. Kao,Huang,Hwu, “Study on the Transient Behaviors of Concentric MIS Tunneling Diodes by Rapid Voltage Switching at Ring/Center and Read at Center/Ring,” IEEE Transactions on Electron Devices, 72, 364, Jan. 2025
  2. Kung,Hwu, “Control of current polarity in concentric metal–insulator-semiconductor tunnel diode (MISTD) structures by designed coupling rings,” Applied Physics A, 131:9, 9-1, Jan. 2025
  3. Liao,Hwu, “Low Interface Trap Density 4H-SiC MIS Structure With SiO₂ Grown by Sub- 1000 °C Intermittent Spray Hydrated Oxidation (ISHO) for UV Sensor Applications,” IEEE Transactions on Electron Devices, 71, 7787, Dec. 2024
  4. J.Y. Lin, S.W. Huang, H.Y/ Lin, and J.G. Hwu*, “Low-Bias Weak Ambient Light Sensor Using Edge Removed MISIM Device With High Sensitivity ,” IEEE Sensors Journal, Vol. 24, No. 19,, 29937, Oct. 2024
  5. C.Y. Kao, S.W. Huang, H.X. Shih, W.C. Lin, S.Y. Feng, and J.G. Hwu*, “Role of Oxide Charges on The Voltage and Current Coupling Effects between Adjacent Devices Examined by Concentric Metal–Insulator–Semiconductor (MIS) Tunnel Diodes With Ultra-thin Oxide, (DOI 1 0.1088/1402-4896/ ad7cd6) ,” Physica Scripta, Vol.99, 105578_1, Sept. 2024
  6. S.W. Huang and J.G. Hwu, “Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation,” IEEE Transactions on Electron Devices, 71, 1166, Feb. 2024
  7. C.Y. Kao, J.C. Lin and J.G. Hwu, “Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack,” Applied Physics A, 130, 42-1, Jan. 2024
  8. Y.C. Lin and J.G. Hwu, “Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation,” IEEE Transactions on Electron Devices, 70, 5184, Oct. 2023
  9. S.W. Huang and J.G. Hwu, “Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes,” IEEE Transactions on Electron Devices, 70, 4999, Oct. 2023
  10. S.W. Huang and J.G. Hwu, “Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO2 for One-Time Programmable Application,” IEEE Transactions on Electron Devices, 70, 4133, Aug. 2023
  11. S.W.Huang and J.G.Hwu*, “Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior,” IEEE Transactions on Electron Devices, Vol. 69, No.12, 7107, Dec. 2022
  12. Chen,Lin,Huang,Lin,Hwu, “Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges,” IEEE Journal of the Electron Devices Society, 10, 960, Oct. 2022
  13. Chen,Chen,Hwu, “Fringing field induced current coupling in concentric metal–insulator–semiconductor (MIS) tunnel diodes with ultra-thin oxide,” AIP Advances, 12, 045116, Apr. 2022
  14. Lin,Chen,Hwu, “An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide,” IEEE Transactions on Electron Devices, 69, 1972, Apr. 2022
  15. Lin,Hwu, “Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors,” ECS Journal of Solid State Science and Technology, 11, 035004, Mar. 2022
  16. K.C.Chen and J.G.Hwu, “Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage,” IEEE Sensors Journal, Vol. 22, No.4, 3164, Feb. 2022
  17. Chen,Lin,Hwu, “Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes,” IEEE Access, 9, 163929, Dec. 2021
  18. Huang,Hwu, “Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers,” IEEE Transactions on Electron Devices, 68, 6580, Dec. 2021
  19. Lin,Hwu, “Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge,” IEEE Transactions on Electron Devices, 68, 4189, Sept. 2021
  20. J.H.Chen, K.C.Chen, and J.G.Hwu*, “Energy-Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes,” IEEE Transactions on Electron Devices,, Vol.68, No.9, , 4189, Sept. 2021
  21. Jenn-Gwo Hwu, Bo-Jyun Chen, and Kuan-Wun Lin, “Memory Devices and Manufacturing Method Thereof,” US 11,195,835 B2, Jul. 2021
  22. Huang,Hwu, “Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner Gate,” IEEE Transactions on Electron Devices, 68, 3417, Jul. 2021
  23. Jenn-Gwo Hwu and Tin-Hao Hsu,, “Semiconductor Device and Operation Method Thereof,” US 10,958,216 B2, Mar. 2021
  24. Huang,Hwu, “Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate,” IEEE Journal of the Electron Devices Society, 9, 1041, 2021
  25. Y.C.Yang, K.L,Lin, and J.G.Hwu*, “Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) Structure,” ECS Journal of Solid State Science and Technology,, Vol. 9., 103006-1, Nov. 2020
  26. K.C.Chen and J.G.Hwu*, “Coupling sensitivity in concentric metal–insulator–semiconductor tunnel diodes by controlling the lateral injection electrons,” AIP Advances, 10, 105002-1, Oct. 2020
  27. B.J.Chen and J.G.Hwu*, “Edge-Etched Al2O3 Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor,” IEEE Journal of the Electron Devices Society,, Vol. 8, 825, Aug. 2020
  28. T.H.Hsu and J.G.Hwu*,, “Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode,” IEEE Transactions on Electron Devices, Vol.67, No.8, 3411, Aug. 2020
  29. Jenn-Gwo Hwu , Wei-Chih Kao, and Chien-Shun Liao, “Charge Storage and Sensing Devices and Methods,” US 10,651,300 B2, May 2020
  30. T.H.Chiang and J.G.Hwu*, “Ultra-Low Subthreshold Swing in Gated MIS(p) Tunnel Diodes With Engineered Oxide Local Thinning Layers,” IEEE Transactions on Electron Devices, Vol.67, No.4, 1887, Apr. 2020
  31. K.W.Lin and J.G.Hwu*, “Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe,” IEEE Transactions on Electron Devices, Vol.57, No.4, 1845, Mar. 2020
  32. C.F.Cheng, Y.C.Yang, and J.G.Hwu*, “Effect of Oxide Thickness on The Two-State Characteristics in MIS(p) Tunnel Diode with Ultrathin Metal Surrounded Gate,” ECS Journal of Solid State Science and Technology, Vol.8, N214, Dec. 2019
  33. Jenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yang, and Samuel C. Pan, “Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) Device, Method of Operation, and Memory Device Including The Same,” US 10,515,998 B2, Dec. 2019
  34. Jenn-Gwo Hwu, Samuel C. Pan, Kuan-Hao Tseng, and Chien-Shun Liao, “A Semiconductor Memory Device,” US 10,381,353 B2, Aug. 2019
  35. H.J.Li, C.F.Yang and J.G.Hwu*, “Two Capacitance States Memory Characteristic in Metal–Oxide–Semiconductor Structure Controlled by an Outer MOS-Gate Ring,” IEEE Transactions on Electron Devices, 66, 1249, Mar. 2019
  36. W.C.Chen, C.F.Yang and J.G.Hwu*, “Enhanced Two States Current in MOS-Gated MIS Separate Write/Read Storage Device by Oxide Soft Breakdown in Remote Gate,” IEEE Transactions on Nanotechnology, Vol.18, No.1, 62, Jan. 2019
  37. C.F.Yang, P.J.Chen, W.C.Chen, K.W.Lin, and J.G.Hwu*, “Gate Oxide Local Thinning Mechanism Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor,” IEEE Transactions on Electron Devices, Vol.61, No.1, 279, Jan. 2019
  38. Y.H.Chen and J.G.Hwu, “Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation,” IEEE Transactions on Electron Devices, Vol.65, No.11, 4910, Nov. 2018
  39. P.K.Chang and J.G.Hwu*, “Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias,” Journal of Applied Physics,, Vol.124, No.2, 024503-1, Jul. 2018
  40. C.F.Yang and J.G.Hwu*, “Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate,” IEEE Transactions on Electron Devices, Vol.65, No.5,, 1810, May 2018
  41. C.F.Yang and J.G.Hwu*, “Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure with Concentric Circular Electrodes Controlled by Designed Substrate Bias,” IEEE Transactions on Electron Devices, Vol. 64, No.12, December, PP.5230-5235., 5230, Dec. 2017
  42. K.H.Tseng, C.S.Liao, and J.G.Hwu*, “Enhancement of Transient Two-States Characteristics in Metal-Insulator-Semiconductor Structure by Thinning Metal Thickness,” IEEE Transactions on Nanotechnology, Vol. 16, No.6, 1011, Nov. 2017
  43. Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, and Chi-Wen Liu,, “Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation,” U.S.A. Patent, Patent No.: US 9,812,395 B2, Nov. 2017
  44. Jenn-Gwo Hwu, Samuel C. Pan, and Chien-Shun Liao, “Double Exponential Mechanism Controlled Transistor,” U.S.A. Patent, Patent No.: US 9,748,379 B2, Aug. 2017
  45. M.H.Yang and J.G.Hwu*, “Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism,” Journal of Applied Physics, Vol.121,, 154504-1, Apr. 2017
  46. Jenn-Gwo Hwu, Wei-Cheng Tian, and Po-Hao Tseng, “Systems and Methods for Forming Nanowires Using Anodic Oxidation,” U.S.A. Patent, Patent No.: US 9,528,194 B2, Dec. 2016
  47. C.F,Yang and J.G.Hwu*, “Role of Fringing Field on The Electrical Characteristics of Metal-Oxide- Semiconductor Capacitors with Co-Planar and Edge-Removed Oxides,” AIP Advances, Vol.6, 125017-1, Dec. 2016
  48. C.S.Liao, W.C.Kao, and J.G.Hwu*, “Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor,” IEEE Journal of the Electron Devices Society, Vol.4, No.6, 424, Nov. 2016
  49. W.C.Kao, J.Y.Chen, and J.G.Hwu*, “Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism,” Applied Physics Letters, Vol. 109, 063503-1, Aug. 2016
  50. C.S.Liao and J.G.Hwu*, “Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode,” IEEE Transactions on Electron Devices, Vol.63, No.7, 2864, Jul. 2016
  51. H.H.Lin and J.G.Hwu*, “Surface Non-Uniformity Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor,” IEEE Transactions on Electron Devices, Vol.63, No.7, 2844, Jul. 2016
  52. Y.K.Lin, H.H.Lin, and J.G.Hwu*, “Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performance,” IEEE Transactions on Electron Devices, Vol.63, No.1, PP.384-389, Jan. 2016
  53. J.Y.Chen, W.C.Kao, and J.G.Hwu, “Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectric,” Applied Physics A, Vol.122, No.6, June, PP.562-1~562-7., 562-1, Jan. 2016
  54. Y.D.Tan and J.G.Hwu, “2-State Current Characteristics of MOSCAP with Ultrathin Oxide and Metal Gate,” ECS Solid State Letters, Dielectric Science and Materials (SSS&T), Vol.4, No.12, PP. N23-N25, Dec. 2015
  55. C.S.Liao and J.G.Hwu*, “Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS gated-MIS Tunnel Transistor,” IEEE Transactions on Electron Devices, Vol.62, No.6, P.2061-2065, Jun. 2015
  56. H.H.Lin and J.G.Hwu*, “Influence of Etching Induced Surface Damage on Device Performance with Consideration of Minority Carriers within Diffusion Length from Depletion Edge,” IEEE Transactions on Electron Devices, Vol.62, No.2, PP.634-640, Feb. 2015
  57. Y.C.Liao and J.G.Hwu*, “Intrinsic I-V and C-V Characteristics of Ultra-thin Oxide MOS (p) and MOS (n) Structures under Deep Depletion,” International Journal of Nanotechnology, Jan. 2015
  58. P.H.Tseng, W.C.Tien, S.C. Pan and J.G.Hwu*, “Formation of Single Crystal Si-Nanowire by Electric Field Self-Redistribution Effect in Anodic Oxidation for Multilayer Array Application,” IEEE Transactions on Nanotechnology, Vol. 13, No.6, PP. 1084-1087, Nov. 2014
  59. Y.K.Lin and J.G.Hwu*, “Role of Lateral Diffusion Current in Perimeter-Dependent Current of MOS(p) Tunneling Temperature Sensors,” IEEE Transactions on Electron Devices, Vol. 61, No. 10, PP. 3562-3565, Oct. 2014
  60. Y.K.Lin and J.G.Hwu*, “Photo-Sensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode,” IEEE Transactions on Electron Devices, Vol. 61, No.9, PP.3217-3222, Sept. 2014
  61. C.S.Peng and J.G.Hwu*, “Improvement in the breakdown endurance of high-k dielectric by utilizing stacking technology and adding sufficient interfacial layer,” Nanoscale Research Letters, Vol.9, No.1, 9:464, PP.1-7, Sept. 2014
  62. T.Y.Chen and J.G.Hwu*, “Effect of Trapped Electrons in Ultra-thin SiO2 on the Two-state Inversion Capacitance at Varied Frequencies of Metal-oxide-semiconductor Capacitor,” Applied Physics A, Vol. 116, No.4, PP. 1971-1977, Aug. 2014
  63. H.W.Lu and J.G.Hwu*, “Roles of Interface and Oxide Trap Density on the Kinked Current Behavior of Al/SiO2/Si(p) Structures with Ultra-thin Oxides,” Applied Physics A, Vol.115, No.3, PP.837-842, May 2014
  64. C.S.Peng and J.G.Hwu*, “Photo-induced Tunneling Currents in MOS Structures with Various HfO2/SiO2 Stacking Dielectrics,” AIP Advances, Vol.4, No.4, PP.047112-1~047112-10, Apr. 2014
  65. P.H.Tseng and J.G.Hwu*, “Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide,” Thin Solid Films, Vol.556, PP.317-321, Apr. 2014
  66. C.C.Lin, P.L.Hsu, L.Lin and J.G.Hwu*, “Investigation on edge fringing effect and oxide thickness dependence of inversion current in MOS tunneling diodes with comb-shaped electrodes,” Journal of Applied Physics, Vol.115, No.12, PP.124109-1~124109-6, Mar. 2014
  67. P.H.Tseng and J.G.Hwu*, “Corner Induced Non-uniform Electric Field Effect on the Electrical Reliability of Metal-Oxide-Semiconductor Devices with Non-planar Substrates,” Solid-State Electronics, Vol.91, PP.100-105., Jan. 2014
  68. C.W.Lee and J.G.Hwu*, “Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers,” AIP Advances, Vol.2, No.10, PP.102123-1~102123-18., Oct. 2013
  69. H.W.Lu and J.G.Hwu*, “Roles of Interface and Oxide Trap Density on the Kinked Current Behavior of Al/SiO2/Si(p) Structures with Ultra-thin Oxides,” Applied Physics A, DOI: 10.1007/s00339-013-7873-2, Aug. 2013
  70. C.C.Lin and J.G.Hwu*, “Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics,” Nanoscale, Vol.5, No.17, PP. 8090-8097, Aug. 2013
  71. C.M.Hsu and J.G.Hwu*, “Improvement of electrical performance of HfO2/SiO2/4H-SiC structure with thin SiO2,” ECS Journal of Solid State Science and Technology, Vol. 2, No.8, N3072-N3078., Jul. 2013
  72. T.Y.Chen, C.S.Pang, and J.G.Hwu*, “Effect of Electrons Trapping/De-trapping at Si-SiO2 Interface on Two-state Current in MOS(p) Structure with Ultra-thin SiO2 by Anodization,” ECS Journal of Solid State Science and Technology, Vol. 2, No.9, Q159-164, Jul. 2013
  73. C.C.Lin and J.G.Hwu*,, “ Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response,” Journal of Applied Physics, Vol.113, No.5, PP. 054103-1~054103-8, Feb. 2013
  74. T.Y.Chen, H.W.Lu, and J.G.Hwu*, “Effect of H2O on the Electrical Characteristics of Ultra-thin SiO2 Prepared with and without Vacuum Treatments after Anodization,” Microelectronic Engineering, Vol.104., PP.5-10, Jan. 2013
  75. C.M.Hsu and J.G.Hwu*, “Investigation of Carbon interstitials with varied SiO2 thickness in HfO2/SiO2/ 4H-SiC structure,” Applied Physics Letters, Vol.101, No.25., PP.253517-1~253517-4, Dec. 2012
  76. P.H.Tseng and J.G.Hwu*, “Non-planar Substrate Effect on the Interface Trap Capacitance of MOS Structures with Ultra Thin Oxides,” Journal of Applied Physics, Vol.112, No.9., PP. 094502-1~094502-7, Nov. 2012
  77. J.C.Chiang and J.G.Hwu*, “Two-State Trap-Assisted Tunneling Current Characteristics in Al2O3/SiO2/SiC Structures With Ultra-thin Dielectrics,” IEEE Transactions on Nanotechnology, Vol.11, No.5., PP.871-876, Sept. 2012
  78. C.C.Lin and J.G.Hwu*, “Investigation of Nonuniformity Phenomenon in Nanoscale SiO2 and High-k Gate Dielectrics,” Journal of Applied Physics, Vol.112, No.6., PP.064119-1~064119-5, Sept. 2012
  79. J.C.Chiang and J.G.Hwu*, “Detrapping Characteristics of Al2O3/SiO2/4H-SiC Stacked Structure with Two-state Trap-assisted Tunnelling Current Behavior,” Journal of Physics D:Applied Physics, Vol.45, P.345303(6pp), Aug. 2012
  80. T.Y.Chen and J.G.Hwu*, “Two States Phenomenon in the Current Behavior of Metal-Oxide-Semiconductor Capacitor Structure with Ultra-thin SiO2,” Applied Physics Letters, Vol.101, No.7., PP. 073506-1~073506-4, Aug. 2012
  81. C.Y.Yang and J.G.Hwu*, “Photo-Sensitivity Enhancement of HfO2-based MOS Photodiode with Specific Perimeter Dependency due to Edge Fringing Field Effect,” IEEE Sensors Journal, Vol.12, No.6., PP.2313-2319., Jun. 2012
  82. J.Y.Cheng and J.G.Hwu*, “Characterization of Edge Fringing Effect on the C-V Responses from Depletion to Deep Depletion of MOS(p) Capacitors with Ultrathin Oxide and High-κ Dielectric,” IEEE Transactions on Electron Devices, Vol.59, No.3., PP.565-572, Mar. 2012
  83. J.C.Chiang and J.G.Hwu*, “Investigation of the Two-State Current Conduction Mechanism in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate,” Journal of the Electrochemical Society, Vol. 158, No.12., PP.G237-G241, Dec. 2011
  84. K.M.Chen and J.G.Hwu*, “Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides,” Journal of Applied Physics, Vol.110, No.11., PP.114104-1~114104-4, Dec. 2011
  85. C.C.Lin and J.G.Hwu*, “Comparison of The Reliability of Thin Al2O3 Gate Dielectrics Prepared by In-Situ Oxidation of Sputtered Aluminum in Oxygen Ambient with and without Followed Nitric Acid Compensation,” IEEE Transactions on Device and Materials Reliability, Vol.11, No.2., PP.227-235, Jun. 2011
  86. S.J.Chang and J.G.Hwu*, “Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors with Ultra-thin Gate Oxides,” IEEE Transactions on Electron Devices, Vol.58, No.3., PP.684-690, Mar. 2011
  87. C.Y.Wang and J.G.Hwu*, “Characterization of Stacked Hafnium Oxide (HfO2) / Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors,” Journal of the Electrochemical Society, Vol.157, No.10., PP. J324-J328., Oct. 2010
  88. J.Y.Cheng, H.T.Lu, and J.G.Hwu*, “Metal-Oxide-Semiconductor Tunneling Photodiodes with Enhanced Deep Depletion at Edge by High-k Material,” Applied Physics Letters, Vol.96, No. 23., PP. 233506-1~233506-3., Jun. 2010
  89. J.Y.Cheng, C.T.Huang, and J.G.Hwu*, “Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultra-thin oxides,” Journal of Applied Physics, Vol.106, No.7, PP.074507-1~074507-7, Oct. 2009
  90. C.Y.Yang and J.G.Hwu*, “Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid,” Journal of the Electrochemical Society, Vol.156, No.11,, PP.G184-G189, Sept. 2009
  91. C.H.Chen, K.C.Chuang and J.G.Hwu*, “Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors with Ultra-thin Oxides and High-k Dielectrics,” IEEE Transactions on Electron Devices, Vol.56, No.6,, PP.1262-1268, Jun. 2009
  92. C.H.Chang and J.G.Hwu*, “Characteristics and Reliability of Hafnium Oxide Dielectric Stacks with Room Temperature Grown Interfacial Anodic Oxide,” IEEE Transactions on Device and Materials Reliability, Vol. 9, No.2, PP.215-221., Jun. 2009
  93. C.Y.Wang and J.G.Hwu*, “Metal-Oxide-Semiconductor (MOS) Structure Solar Cell Prepared by Low Temperature (< 400oC) Anodization Technique,” Journal of the Electrochemical Society, Vol.156, No.3, PP. H181-H183., Jan. 2009
  94. K.C.Chuang and J.G.Hwu*, “Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method,” Journal of the Electrochemical Society,, Vol.155, No.8, PP.G159-G162., Aug. 2008
  95. J.C.Tseng and J.G.Hwu*, “Lateral Non-uniformity Effects of Border Traps on The Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor Subjected to High-Field Stresses,” IEEE Transactions on Electron Devices, Vol.55, No.6, PP.1366-1372., Jun. 2008
  96. C.C.Wang, T.H.Li, K.C.Chuang and J.G.Hwu*, “Study of Ultra-thin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System,” Journal of the Electrochemical Society, Vol.155, No.3, PP.G61-G64., Mar. 2008
  97. C.H.Chang and J.G.Hwu*, “Reliability of Low Temperature Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-effective Nitric Acid Oxidation (NAO) Technique,” IEEE Transactions on Device and Materials Reliability, Vol. 7, No.4, PP.611-616., Dec. 2007
  98. H.P.Lin and J.G.Hwu*, “Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-based Terman Method,” IEEE Transactions on Electron Devices, Vol. 54, No.11, PP. 3064-3070, Nov. 2007
  99. J.C.Tseng and J.G.Hwu*, “Oxide Trapped Charges Induced by Electrostatic Discharge (ESD) Impulse Stress,” IEEE Transactions on Electron Devices, Vol.54, No.7, PP.1666~1671, Jul. 2007
  100. Y.L.Yang, C.H.Chang, Y.H.Shih, K.Y.Hsieh, and J.G.Hwu*, “Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory,” IEEE Transactions on Electron Devices, Vol.54, No.6, PP.1360~1365, Jun. 2007
  101. J.C.Chiang and J.G.Hwu*, “Low Temperature (< 400 ℃) Al2O3 Ultrathin Gate Dielectrics Prepared by Shadow Evaporation of Aluminum Followed by Nitric Acid Oxidation,” Applied Physics Letters, Vol.90, No.10, PP.102902-1~102902-3, Mar. 2007
  102. J.C.Tseng and J.G.Hwu*, “Effects of Electrostatic Discharge (ESD) High-Field Current Impulse on Oxide Breakdown”,” Journal of Applied Physics, Vol.101, No.1, PP. 014103-1~014103-6, Jan. 2007
  103. T.M.Wang, C.H.Chang, and J.G.Hwu*, “Enhancement of Temperature Sensitivity of Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide (HfO2) Film Added on Silicon Dioxide (SiO2),” IEEE Sensors Journal, Vol. 6, No. 6, PP. 1468-1472, Dec. 2006
  104. K.C.Chuang and J.G.Hwu*, “Improvement in Electrical Characteristics of High-k Al2O3 Gate Dielectric by Field-Assisted Nitric Oxidation,” Applied Physics Letters, Vol.89, No.23, PP.232903-1~232903-3, Dec. 2006
  105. C.W.Tung, Y.L.Yang and J.G.Hwu*, “Impact of Strain-Temperature Stress on Ultrathin Oxide,” IEEE Transactions on Electron Devices, Vol.53, No.7, PP.1736-1737, Jul. 2006
  106. S.W.Huang and J.G.Hwu*, “Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors with Al2O3 Gate Dielectrics,” IEEE Transactions on Electron Devices, Vol.53, No.7, PP.1608-1614, Jul. 2006
  107. T.M. Wang and J.G. Hwu*, “Temperature-Induced Voltage Drop Rearrangement and Its Effect on Oxide Breakdown in MOS Capacitor Structure,” Journal of Applied Physics, Vol.97, No.4, PP.044504-1~5, Apr. 2005
  108. Y.P.Lin and J.G.Hwu*, “Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current,” Journal of The Electrochemical Society, Vol.151, No.12, PP.G853-G857, Dec. 2004
  109. S.W.Huang and J.G.Hwu*, “Ultra-Thin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation,” IEEE Transactions on Electron Devices, Vol.51, No.11, PP.1877-1882, Nov. 2004
  110. Y.L.Yang and J.G.Hwu*, “Quality Improvement of Ultra-Thin Gate Oxide by Using Thermal-Growth Followed by Scanning-Frequency Anodization (SF ANO) Technique,” IEEE Electron Device Letters, Vol.25, No.10, PP.687-689, Oct. 2004
  111. W.J.Liao, Y.L.Yang, S.C.Chuang, and J.G.Hwu*, “Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides,” Journal of The Electrochemical Society, Vol.151, No.9, PP.G549-G553, Sept. 2004
  112. Y.H.Shih, S.R.Lin, T.M.Wang, and J.G.Hwu*, “High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection,” IEEE Transactions on Electron Devices, Vol.51, No.9, PP.1514-1521, Sept. 2004
  113. C.S.Kuo, J.F.Hsu, S.W.Huang, L.S.Lee, M.J.Tsai, and J.G.Hwu*, “High-k Al2O3 Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High Temperature Annealing,” IEEE Transactions on Electron Devices, Vol.51, No.6, PP.854-858, Jun. 2004
  114. S.W.Huang and J.G.Hwu*, “Electrical Characterization and Process Control of Cost Effective High-k Aluminum Oxide Gate Dielectrics Prepared by Anodization Followed by Furnace Annealing,” IEEE Transactions on Electron Devices, Vol.50, No.7,, PP.1658-1664, Jul. 2003
  115. C.C.Hong and J.G.Hwu*, “Stress Distribution on (100) Si Wafer Mapped by Novel I-V Analysis of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol.24, No.6, PP.408-410, Jun. 2003