Kao,Huang,Hwu, “Study on the Transient Behaviors of Concentric MIS Tunneling Diodes by Rapid Voltage Switching at Ring/Center and Read at Center/Ring,” IEEE Transactions on Electron Devices, 72, 364-369, Jan. 2025
Kung,Hwu, “Control of current polarity in concentric metal–insulator-semiconductor tunnel diode (MISTD) structures by designed coupling rings,” Applied Physics A, 131:9, 9-1-9-8, Jan. 2025
Liao,Hwu, “Low Interface Trap Density 4H-SiC MIS Structure With SiO₂ Grown by Sub- 1000 °C Intermittent Spray Hydrated Oxidation (ISHO) for UV Sensor Applications,” IEEE Transactions on Electron Devices, 71, 7787-7793, Dec. 2024
J.Y. Lin, S.W. Huang, H.Y/ Lin, and J.G. Hwu*, “Low-Bias Weak Ambient Light Sensor Using Edge Removed MISIM Device With High Sensitivity ,” IEEE Sensors Journal, Vol. 24, No. 19,, 29937-29944, Oct. 2024
C.Y. Kao, S.W. Huang, H.X. Shih, W.C. Lin, S.Y. Feng, and J.G. Hwu*, “Role of Oxide Charges on The Voltage and Current Coupling Effects between Adjacent Devices Examined by Concentric Metal–Insulator–Semiconductor (MIS) Tunnel Diodes With Ultra-thin Oxide, (DOI 1 0.1088/1402-4896/ ad7cd6) ,” Physica Scripta, Vol.99, 105578_1-105578_12, Sept. 2024
C.Y. Kao, T.M. Kung, and J.G. Hwu*, “Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al2O3/SiO2 Gate Stacks under Strong Inversion Condition,” Electrochemical Society Transactions, Vol. 113, No.2., 43-49, May 2024
S.W. Huang, J.Y. Lin and J.G. Hwu*, “Unveiling Sub-60 mV/decade Subthreshold Swing in The Oxide Local Thinning (OLT) Gated MIS Tunnel Diodes by TCAD Simulations,” Electrochemical Society Transactions, Vol. 113, No.5., 9-17, May 2024
S.W. Huang and J.G. Hwu, “Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation,” IEEE Transactions on Electron Devices, 71, 1166-1172, Feb. 2024
C.Y. Kao, J.C. Lin and J.G. Hwu, “Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack,” Applied Physics A, 130, 42-1-42-8, Jan. 2024
S.W. Huang and J.G. Hwu, “Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes,” IEEE Transactions on Electron Devices, 70, 4999-5006, Oct. 2023
Y.C. Lin and J.G. Hwu, “Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation,” IEEE Transactions on Electron Devices, 70, 5184-5189, Oct. 2023
Y.C. Lin and J.G. Hwu, “Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation,” IEEE Transactions on Electron Devices, 70, 5184-5189, Oct. 2023
S.W. Huang and J.G. Hwu, “Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO2 for One-Time Programmable Application,” IEEE Transactions on Electron Devices, 70, 4133-4138, Aug. 2023
S.W.Huang and J.G.Hwu*, “Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior,” IEEE Transactions on Electron Devices, Vol. 69, No.12, 7107-7112, Dec. 2022
Chen,Lin,Huang,Lin,Hwu, “Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges,” IEEE Journal of the Electron Devices Society, 10, 960-969, Oct. 2022
Lin,Chen,Hwu, “An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide,” IEEE Transactions on Electron Devices, 69, 1972-1978, Apr. 2022
Chen,Chen,Hwu, “Fringing field induced current coupling in concentric metal–insulator–semiconductor (MIS) tunnel diodes with ultra-thin oxide,” AIP Advances, 12, 045116-undefined, Apr. 2022
Lin,Hwu, “Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors,” ECS Journal of Solid State Science and Technology, 11, 035004-undefined, Mar. 2022
K.C.Chen and J.G.Hwu, “Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage,” IEEE Sensors Journal, Vol. 22, No.4, 3164-3171, Feb. 2022
Huang,Hwu, “Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers,” IEEE Transactions on Electron Devices, 68, 6580-6585, Dec. 2021
Chen,Lin,Hwu, “Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes,” IEEE Access, 9, 163929-163937, Dec. 2021
Lin,Hwu, “Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge,” IEEE Transactions on Electron Devices, 68, 4189-4194, Sept. 2021
J.H.Chen, K.C.Chen, and J.G.Hwu*, “Energy-Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes,” IEEE Transactions on Electron Devices,, Vol.68, No.9, , 4189-4194, Sept. 2021
Huang,Hwu, “Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner Gate,” IEEE Transactions on Electron Devices, 68, 3417-3423, Jul. 2021
Huang,Hwu, “Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate,” IEEE Journal of the Electron Devices Society, 9, 1041-1048, 2021
Y.C.Yang, K.L,Lin, and J.G.Hwu*, “Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) Structure,” ECS Journal of Solid State Science and Technology,, Vol. 9., 103006-1-103006-6, Nov. 2020
K.C.Chen and J.G.Hwu*, “Coupling sensitivity in concentric metal–insulator–semiconductor tunnel diodes by controlling the lateral injection electrons,” AIP Advances, 10, 105002-1-105002-6, Oct. 2020
B.J.Chen and J.G.Hwu*, “Edge-Etched Al2O3 Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor,” IEEE Journal of the Electron Devices Society,, Vol. 8, 825-833, Aug. 2020
T.H.Hsu and J.G.Hwu*,, “Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode,” IEEE Transactions on Electron Devices, Vol.67, No.8, 3411-3416, Aug. 2020
T.H.Chiang and J.G.Hwu*, “Ultra-Low Subthreshold Swing in Gated MIS(p) Tunnel Diodes With Engineered Oxide Local Thinning Layers,” IEEE Transactions on Electron Devices, Vol.67, No.4, 1887-1893, Apr. 2020
K.W.Lin and J.G.Hwu*, “Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe,” IEEE Transactions on Electron Devices, Vol.57, No.4, 1845-1851, Mar. 2020
C.F.Cheng, Y.C.Yang, and J.G.Hwu*, “Effect of Oxide Thickness on The Two-State Characteristics in MIS(p) Tunnel Diode with Ultrathin Metal Surrounded Gate,” ECS Journal of Solid State Science and Technology, Vol.8, N214-N219, Dec. 2019
Y.H.Chen and J.G.Hwu*, “Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes,” Electrochemical Society Transactions, Vol.89, No.3, 121-131, Jun. 2019
H.J.Li, C.F.Yang and J.G.Hwu*, “Two Capacitance States Memory Characteristic in Metal–Oxide–Semiconductor Structure Controlled by an Outer MOS-Gate Ring,” IEEE Transactions on Electron Devices, 66, 1249-1254, Mar. 2019
C.F.Yang, P.J.Chen, W.C.Chen, K.W.Lin, and J.G.Hwu*, “Gate Oxide Local Thinning Mechanism Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor,” IEEE Transactions on Electron Devices, Vol.61, No.1, 279-285, Jan. 2019
W.C.Chen, C.F.Yang and J.G.Hwu*, “Enhanced Two States Current in MOS-Gated MIS Separate Write/Read Storage Device by Oxide Soft Breakdown in Remote Gate,” IEEE Transactions on Nanotechnology, Vol.18, No.1, 62-67, Jan. 2019
Y.H.Chen and J.G.Hwu, “Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation,” IEEE Transactions on Electron Devices, Vol.65, No.11, 4910-4915, Nov. 2018
P.K.Chang and J.G.Hwu*, “Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias,” Journal of Applied Physics,, Vol.124, No.2, 024503-1-024503-6, Jul. 2018
C.T.Lin and J.G.Hwu*, “Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate,” Electrochemical Society Transactions, Vol. 85, No.6, 51-47, May 2018
C.H.Chan and J.G.Hwu*, “On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor,” Electrochemical Society Transactions, Vol. 85, No.8, 65-71, May 2018
H.Y.Chen and J.G.Hwu*, “Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure,” Electrochemical Society Transactions, Vo. 85, No. 13, 1441-1448, May 2018
C.F.Yang and J.G.Hwu*, “Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate,” IEEE Transactions on Electron Devices, Vol.65, No.5,, 1810-1816, May 2018
P.K.Chang and J.G.Hwu*, “Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric,” Applied Physics A, Vol. 124, No.2, 87-1-87-7, Feb. 2018
C.F.Yang and J.G.Hwu*, “Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure with Concentric Circular Electrodes Controlled by Designed Substrate Bias,” IEEE Transactions on Electron Devices, Vol. 64, No.12, December, PP.5230-5235., 5230-5235, Dec. 2017
K.H.Tseng, C.S.Liao, and J.G.Hwu*, “Enhancement of Transient Two-States Characteristics in Metal-Insulator-Semiconductor Structure by Thinning Metal Thickness,” IEEE Transactions on Nanotechnology, Vol. 16, No.6, 1011-1015, Nov. 2017
T.H.Lee, C.S.Liao, and J.G.Hwu*, “Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor,” Electrochemical Society Transactions, Vol.80, No.1, 387-392, Oct. 2017
C.F.Yang and J.G.Hwu*, “Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage,” Electrochemical Society Transactions, Vol.80, No.1, 81-89, Oct. 2017
M.H.Yang and J.G.Hwu*, “MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effec,” Electrochemical Society Transactions, Vol.77, No.5, 81-92, May 2017
C.J.Chou and J.G.Hwu*, “Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode,” Electrochemical Society Transactions, Vol.77, No.5, 99-107, May 2017
W.T.Hou, W.C.Kao, and J.G.Hwu*, “Enhancement of Light-to-Dark Current Ratio via Coupling Effect for MIS (p) Tunnel Diode Photo Sensors,” Electrochemical Society Transactions, Vol.77, No.5, 249-258, May 2017
M.H.Yang and J.G.Hwu*, “Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism,” Journal of Applied Physics, Vol.121,, 154504-1-154504-6, Apr. 2017
P.K.Chang and J.G.Hwu*, “Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination,” Applied Physics A, Vol.123, 261-1-261-8, Mar. 2017
P.K.Chang and J.G.Hwu*, “Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric,” Applied Physics A, Vol. 124, No.2, 87-1-87-7, Feb. 2017
C.F,Yang and J.G.Hwu*, “Role of Fringing Field on The Electrical Characteristics of Metal-Oxide- Semiconductor Capacitors with Co-Planar and Edge-Removed Oxides,” AIP Advances, Vol.6, 125017-1-125017-7, Dec. 2016
C.S.Liao, W.C.Kao, and J.G.Hwu*, “Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor,” IEEE Journal of the Electron Devices Society, Vol.4, No.6, 424-429, Nov. 2016
C.S.Liao and J.G.Hwu*, “Current Coupling Effect in MIS Tunnel Diode with Coupled Open-Gated MIS Structure,” Electrochemical Society Transactions, Vol. 75, No.5, 77-86, Oct. 2016
H.H.Lin and J.G.Hwu*, “Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effec,” Electrochemical Society Transactions,, Vol. 75, No.5, 63-67, Oct. 2016
W.C.Kao, J.Y.Chen, and J.G.Hwu*, “Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism,” Applied Physics Letters, Vol. 109, 063503-1-063503-4, Aug. 2016
H.H.Lin and J.G.Hwu*, “Surface Non-Uniformity Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor,” IEEE Transactions on Electron Devices, Vol.63, No.7, 2844-2851, Jul. 2016
C.S.Liao and J.G.Hwu*, “Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode,” IEEE Transactions on Electron Devices, Vol.63, No.7, 2864-2870, Jul. 2016
W.C.Kao, J.Y.Chen, and J.G,Hwu*, “Two States Phenomenon Induced by Neighboring Device Coupling Effect in MIS(p) Tunnel Current,” Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur, Vol.72, No.2, 223-230, May 2016
J.Y.Chen, W.C.Kao, and J.G.Hwu*, “Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide,” Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur, Vol.72, No.2, 97-107, May 2016
Y.K.Lin, H.H.Lin, and J.G.Hwu*, “Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performance,” IEEE Transactions on Electron Devices, Vol.63, No.1, PP.384-389, Jan. 2016
J.Y.Chen, W.C.Kao, and J.G.Hwu, “Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectric,” Applied Physics A, Vol.122, No.6, June, PP.562-1~562-7., 562-1-562-7, Jan. 2016
Y.D.Tan and J.G.Hwu, “2-State Current Characteristics of MOSCAP with Ultrathin Oxide and Metal Gate,” ECS Solid State Letters, Dielectric Science and Materials (SSS&T), Vol.4, No.12, PP. N23-N25, Dec. 2015
C.S.Liao and J.G.Hwu, “Negative Gate Transconductance in MIS Tunnel Diode Induced By Peripheral Minority Carrier Control Mechanism,” Electrochemical Society Transactions - Semiconductors, Dielectrics, and Metals for Nanoelectronics, Issue 13, Vol. 69, No.5, Oct, Vol.69, No.5, PP.229-235, Oct. 2015
C.S.Liao and J.G.Hwu, “The Device-Perimeter Dependency in the Transient Current of a Metal-Insulator-Metal-Insulator-Semiconductor Capacitor with Anodic Oxide Films,” Electrochemical Society Transactions - Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin, Vol.69, No.31, PP. 49-55, Oct. 2015
C.F.Yang and J.G.Hwu*, “Tunneling Current Induced Frequency Dispersion in the C-V Behavior of Ultra-Thin Oxide Mos Capacitors,” Electrochemical Society Transactions - Semiconductors, Dielectrics, and Metals for Nanoelectronics, Vol.69, No.5, PP.243-248, Oct. 2015
C.S.Liao and J.G.Hwu*, “Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS gated-MIS Tunnel Transistor,” IEEE Transactions on Electron Devices, Vol.62, No.6, P.2061-2065, Jun. 2015
H.H.Lin and J.G.Hwu*, “Influence of Etching Induced Surface Damage on Device Performance with Consideration of Minority Carriers within Diffusion Length from Depletion Edge,” IEEE Transactions on Electron Devices, Vol.62, No.2, PP.634-640, Feb. 2015
Y.C.Liao and J.G.Hwu*, “Intrinsic I-V and C-V Characteristics of Ultra-thin Oxide MOS (p) and MOS (n) Structures under Deep Depletion,” International Journal of Nanotechnology, Jan. 2015
P.H.Tseng, W.C.Tien, S.C. Pan and J.G.Hwu*, “Formation of Single Crystal Si-Nanowire by Electric Field Self-Redistribution Effect in Anodic Oxidation for Multilayer Array Application,” IEEE Transactions on Nanotechnology, Vol. 13, No.6, PP. 1084-1087, Nov. 2014
Y.K.Lin and J.G.Hwu*, “Role of Lateral Diffusion Current in Perimeter-Dependent Current of MOS(p) Tunneling Temperature Sensors,” IEEE Transactions on Electron Devices, Vol. 61, No. 10, PP. 3562-3565, Oct. 2014
Y.K.Lin and J.G.Hwu*, “Photo-Sensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode,” IEEE Transactions on Electron Devices, Vol. 61, No.9, PP.3217-3222, Sept. 2014
C.S.Peng and J.G.Hwu*, “Improvement in the breakdown endurance of high-k dielectric by utilizing stacking technology and adding sufficient interfacial layer,” Nanoscale Research Letters, Vol.9, No.1, 9:464, PP.1-7, Sept. 2014
T.Y.Chen and J.G.Hwu*, “Effect of Trapped Electrons in Ultra-thin SiO2 on the Two-state Inversion Capacitance at Varied Frequencies of Metal-oxide-semiconductor Capacitor,” Applied Physics A, Vol. 116, No.4, PP. 1971-1977, Aug. 2014
Y.K.Lin, Li Lin, and J.G.Hwu*, “Minority Carriers Induced Schottky Barrier Height Modulation in Current Behavior of Metal-Oxide-Semiconductor Tunneling Diode,” ECS Journal of Solid State Science and Technology, Vol. 3, No.6, PP.Q132-Q135, May 2014
H.W.Lu and J.G.Hwu*, “Roles of Interface and Oxide Trap Density on the Kinked Current Behavior of Al/SiO2/Si(p) Structures with Ultra-thin Oxides,” Applied Physics A, Vol.115, No.3, PP.837-842, May 2014
P.H.Tseng and J.G.Hwu*, “Non-Planar Substrate Metal-Oxide-Semiconductor Photo-Capacitance Detectors with Enhanced Deep Depletion Sensitivity at Convex Corner,” ECS Journal of Solid State Science and Technology, Vol.3, No.6, PP. Q104-Q108, Apr. 2014
P.H.Tseng and J.G.Hwu*, “Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide,” Thin Solid Films, Vol.556, PP.317-321, Apr. 2014
C.S.Peng and J.G.Hwu*, “Photo-induced Tunneling Currents in MOS Structures with Various HfO2/SiO2 Stacking Dielectrics,” AIP Advances, Vol.4, No.4, PP.047112-1~047112-10, Apr. 2014
C.C.Lin, P.L.Hsu, L.Lin and J.G.Hwu*, “Investigation on edge fringing effect and oxide thickness dependence of inversion current in MOS tunneling diodes with comb-shaped electrodes,” Journal of Applied Physics, Vol.115, No.12, PP.124109-1~124109-6, Mar. 2014
P.H.Tseng and J.G.Hwu*, “Corner Induced Non-uniform Electric Field Effect on the Electrical Reliability of Metal-Oxide-Semiconductor Devices with Non-planar Substrates,” Solid-State Electronics, Vol.91, PP.100-105., Jan. 2014
T.Y.Chen and J.G.Hwu*, “Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer,” ECS Journal of Solid State Science and Technology,, Vol. 3, No. 4, PP.Q37-Q41., Jan. 2014
T.Y.Chen and J.G.Hwu*, “Sensitivity Enhancement of Metal-oxide-semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-thin SiO2 Layer,” Electrochemical Society Transactions,, Vol.58, No.8, PP.79-85., Oct. 2013
H.W.Lu and J.G.Hwu*, “Lateral Nonuniformity of the Tunneling Current of Al/SiO2/p-Si Capacitor in Inversion Region due to Edge Fringing Field Effect,” Electrochemical Society Transactions- Semiconductors, Dielectrics, and Metals for Nanoelectronics 11, Vol.58, No.7, PP.339-344., Oct. 2013
C.W.Lee and J.G.Hwu*, “Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers,” AIP Advances, Vol.2, No.10, PP.102123-1~102123-18., Oct. 2013
C.C.Lin and J.G.Hwu*, “Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics,” Nanoscale, Vol.5, No.17, PP. 8090-8097, Aug. 2013
H.W.Lu and J.G.Hwu*, “Roles of Interface and Oxide Trap Density on the Kinked Current Behavior of Al/SiO2/Si(p) Structures with Ultra-thin Oxides,” Applied Physics A, DOI: 10.1007/s00339-013-7873-2, Aug. 2013
T.Y.Chen, C.S.Pang, and J.G.Hwu*, “Effect of Electrons Trapping/De-trapping at Si-SiO2 Interface on Two-state Current in MOS(p) Structure with Ultra-thin SiO2 by Anodization,” ECS Journal of Solid State Science and Technology, Vol. 2, No.9, Q159-164, Jul. 2013
C.M.Hsu and J.G.Hwu*, “Improvement of electrical performance of HfO2/SiO2/4H-SiC structure with thin SiO2,” ECS Journal of Solid State Science and Technology, Vol. 2, No.8, N3072-N3078., Jul. 2013
C.C.Lin and J.G.Hwu*,, “ Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response,” Journal of Applied Physics, Vol.113, No.5, PP. 054103-1~054103-8, Feb. 2013
T.Y.Chen, H.W.Lu, and J.G.Hwu*, “Effect of H2O on the Electrical Characteristics of Ultra-thin SiO2 Prepared with and without Vacuum Treatments after Anodization,” Microelectronic Engineering, Vol.104., PP.5-10, Jan. 2013
P.H.Tseng and J.G.Hwu*, “Interface Trap Redistribution and Deep Depletion Behavior in Non-planar MOS with Ultra-thin Oxide Grown by Anodic Oxidation,” Electrochemical Society Transactions-Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5, Vol. 53, No. 1, PP.331-341., 2013
C.M.Hsu and J.G.Hwu*, “Investigation of Carbon interstitials with varied SiO2 thickness in HfO2/SiO2/ 4H-SiC structure,” Applied Physics Letters, Vol.101, No.25., PP.253517-1~253517-4, Dec. 2012
P.H.Tseng and J.G.Hwu*, “Non-planar Substrate Effect on the Interface Trap Capacitance of MOS Structures with Ultra Thin Oxides,” Journal of Applied Physics, Vol.112, No.9., PP. 094502-1~094502-7, Nov. 2012
J.C.Chiang and J.G.Hwu*, “Two-State Trap-Assisted Tunneling Current Characteristics in Al2O3/SiO2/SiC Structures With Ultra-thin Dielectrics,” IEEE Transactions on Nanotechnology, Vol.11, No.5., PP.871-876, Sept. 2012
C.C.Lin and J.G.Hwu*, “Investigation of Nonuniformity Phenomenon in Nanoscale SiO2 and High-k Gate Dielectrics,” Journal of Applied Physics, Vol.112, No.6., PP.064119-1~064119-5, Sept. 2012
J.C.Chiang and J.G.Hwu*, “Detrapping Characteristics of Al2O3/SiO2/4H-SiC Stacked Structure with Two-state Trap-assisted Tunnelling Current Behavior,” Journal of Physics D:Applied Physics, Vol.45, P.345303(6pp), Aug. 2012
T.Y.Chen and J.G.Hwu*, “Two States Phenomenon in the Current Behavior of Metal-Oxide-Semiconductor Capacitor Structure with Ultra-thin SiO2,” Applied Physics Letters, Vol.101, No.7., PP. 073506-1~073506-4, Aug. 2012
C.Y.Yang and J.G.Hwu*, “Photo-Sensitivity Enhancement of HfO2-based MOS Photodiode with Specific Perimeter Dependency due to Edge Fringing Field Effect,” IEEE Sensors Journal, Vol.12, No.6., PP.2313-2319., Jun. 2012
C.M.Hsu and J.G.Hwu*, “SiO2 Thickness Dependency of C-V Dispersion in Stacked Al/HfO2/SiO2/4H-SiC Capacitors,” Electrochemical Society Transactions - Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufactur, Vol.45, No.3., PP.209-215, May 2012
J.Y.Cheng and J.G.Hwu*, “Characterization of Edge Fringing Effect on the C-V Responses from Depletion to Deep Depletion of MOS(p) Capacitors with Ultrathin Oxide and High-κ Dielectric,” IEEE Transactions on Electron Devices, Vol.59, No.3., PP.565-572, Mar. 2012
J.C.Chiang and J.G.Hwu*, “Investigation of the Two-State Current Conduction Mechanism in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate,” Journal of the Electrochemical Society, Vol. 158, No.12., PP.G237-G241, Dec. 2011
K.M.Chen and J.G.Hwu*, “Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides,” Journal of Applied Physics, Vol.110, No.11., PP.114104-1~114104-4, Dec. 2011
C.C.Lin and J.G.Hwu*, “Electrical Characteristics and Temperature Response of Al2O3 Gate Dielectrics with and without Nitric Acid Compensation,” Electrochemical Society Transactions - Physics and Technology of High-k Materials 9, Volume 41, No. 3., PP.361-371, Sept. 2011
C.C.Lin and J.G.Hwu*, “Comparison of The Reliability of Thin Al2O3 Gate Dielectrics Prepared by In-Situ Oxidation of Sputtered Aluminum in Oxygen Ambient with and without Followed Nitric Acid Compensation,” IEEE Transactions on Device and Materials Reliability, Vol.11, No.2., PP.227-235, Jun. 2011
H.W.Lu, T.Y.Chen, and J.G.Hwu*, “Electrical Characteristics Analysis at Oxide Flat-band Voltage for Al-SiO2-Si Capacitor,” Electrochemical Society Transactions- Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11, Volume 35, No. 4., PP.639-650, Apr. 2011
J.C.Chiang and J.G.Hwu*, “Two-State Current Conduction in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate,” Electrochemical Society Transactions - Wide Bandgap Semiconductor Materials and Devices 12, Volume 35, No. 6., PP.165-171, Apr. 2011
T.Y.Chen, H.W.Lu, and J.G.Hwu*, “Influence of Residual Ions and Gases at Si/SiO2 Interface in Ultra-Thin Gate Oxide,” Electrochemical Society Transactions - Processes at the Semiconductor Solution Interface 4, Volume 35, No. 8., PP.201-210, Apr. 2011
S.J.Chang and J.G.Hwu*, “Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors with Ultra-thin Gate Oxides,” IEEE Transactions on Electron Devices, Vol.58, No.3., PP.684-690, Mar. 2011
C.Y.Wang and J.G.Hwu*, “Characterization of Stacked Hafnium Oxide (HfO2) / Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors,” Journal of the Electrochemical Society, Vol.157, No.10., PP. J324-J328., Oct. 2010
J.Y.Cheng, H.T.Lu, and J.G.Hwu*, “Metal-Oxide-Semiconductor Tunneling Photodiodes with Enhanced Deep Depletion at Edge by High-k Material,” Applied Physics Letters, Vol.96, No. 23., PP. 233506-1~233506-3., Jun. 2010
C.H.Chen and J.G.Hwu*, “Stack Engineering of Low-Temperature-Processing Al2O3 Dielectrics Prepared by Nitric Acid Oxidation for MOS Structure,” Microelectronics Engineering, Vol.87, pp. 686-689, Jan. 2010
K.C.Chuang and J.G.Hwu*, “Thin Silicon Oxide Films on N-type 4H-SiC Prepared by Scanning Frequency Anodization Method,” Microelectronics Engineering, Vol.86, No.11, PP. 2207-2210, Nov. 2009
J.Y.Cheng, C.T.Huang, and J.G.Hwu*, “Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultra-thin oxides,” Journal of Applied Physics, Vol.106, No.7, PP.074507-1~074507-7, Oct. 2009
C.Y.Wang and J.G.Hwu*, “Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors,” Electrochemical Society Transactions - Physics and Technology of High-k Gate Dielectric 7, Volume 25, No.6, PP.361-370, Sept. 2009
J.Y.Cheng, C.T.Huang, and J.G.Hwu*, “Comparison of Lateral Non-uniformity Phenomena between HfO2 and SiO2 from Magnified C-V Curves in Inversion Region,” Electrochemical Society Transactions - Physics and Technology of High-k Gate Dielectric 7, Volume 25, No.6, PP.327-338, Sept. 2009
C.Y.Yang and J.G.Hwu*, “Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid,” Journal of the Electrochemical Society, Vol.156, No.11,, PP.G184-G189, Sept. 2009
H.L.Chen, C.J. Lee, and J.G.Hwu*, “Effect of Tensile Stress on MOS Capacitors with Ultra-thin Gate Oxide,” International Journal of Electrical Engineering, Vol.16, No.4, PP.283-287, Aug. 2009
C.H.Chang and J.G.Hwu*, “Characteristics and Reliability of Hafnium Oxide Dielectric Stacks with Room Temperature Grown Interfacial Anodic Oxide,” IEEE Transactions on Device and Materials Reliability, Vol. 9, No.2, PP.215-221., Jun. 2009
C.H.Chen, K.C.Chuang and J.G.Hwu*, “Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors with Ultra-thin Oxides and High-k Dielectrics,” IEEE Transactions on Electron Devices, Vol.56, No.6,, PP.1262-1268, Jun. 2009
C.H.Chang and J.G.Hwu*, “Trapping Characteristics of Al2O3/HfO2/SiO2 Stack Structure Prepared by Low Temperature In-situ Oxidation in dc-sputtering,” Journal of Applied Physics, Vol.105, No.9, PP.094103-1~094103-6, May 2009
C.Y.Wang and J.G.Hwu*, “Metal-Oxide-Semiconductor (MOS) Structure Solar Cell Prepared by Low Temperature (< 400oC) Anodization Technique,” Journal of the Electrochemical Society, Vol.156, No.3, PP. H181-H183., Jan. 2009
C.N.Lin, Y.L.Yang, W.T.Chen, S.C.Lin, K.C.Chuang, and J.G.Hwu*, “Effect of Strain-Temperature Stress on MOS Structure with Ultra-thin Gate Oxide,” Microelectronics Engineering, Vol.85, PP.1915-1919., Sept. 2008
K.C.Chuang and J.G.Hwu*, “Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method,” Journal of the Electrochemical Society,, Vol.155, No.8, PP.G159-G162., Aug. 2008
J.C.Tseng and J.G.Hwu*, “Lateral Non-uniformity Effects of Border Traps on The Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor Subjected to High-Field Stresses,” IEEE Transactions on Electron Devices, Vol.55, No.6, PP.1366-1372., Jun. 2008
H.P.Lin and J.G.Hwu*, “Shallow Level Trap Formation in SiO2 Induced by High Field and Thermal Stresses,” Journal of Applied Physics, Vol.103, PP.104102-1~104102-5., May 2008
C.C.Wang, T.H.Li, K.C.Chuang and J.G.Hwu*, “Study of Ultra-thin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System,” Journal of the Electrochemical Society, Vol.155, No.3, PP.G61-G64., Mar. 2008
C.H.Chang and J.G.Hwu*, “Reliability of Low Temperature Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-effective Nitric Acid Oxidation (NAO) Technique,” IEEE Transactions on Device and Materials Reliability, Vol. 7, No.4, PP.611-616., Dec. 2007
H.P.Lin and J.G.Hwu*, “Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-based Terman Method,” IEEE Transactions on Electron Devices, Vol. 54, No.11, PP. 3064-3070, Nov. 2007
J.C.Tseng and J.G.Hwu*, “Oxide Trapped Charges Induced by Electrostatic Discharge (ESD) Impulse Stress,” IEEE Transactions on Electron Devices, Vol.54, No.7, PP.1666~1671, Jul. 2007
Y.L.Yang, C.H.Chang, Y.H.Shih, K.Y.Hsieh, and J.G.Hwu*, “Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory,” IEEE Transactions on Electron Devices, Vol.54, No.6, PP.1360~1365, Jun. 2007
J.C.Chiang and J.G.Hwu*, “Low Temperature (< 400 ℃) Al2O3 Ultrathin Gate Dielectrics Prepared by Shadow Evaporation of Aluminum Followed by Nitric Acid Oxidation,” Applied Physics Letters, Vol.90, No.10, PP.102902-1~102902-3, Mar. 2007
J.C.Tseng and J.G.Hwu*, “Effects of Electrostatic Discharge (ESD) High-Field Current Impulse on Oxide Breakdown”,” Journal of Applied Physics, Vol.101, No.1, PP. 014103-1~014103-6, Jan. 2007
T.M.Wang, C.H.Chang, and J.G.Hwu*, “Enhancement of Temperature Sensitivity of Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide (HfO2) Film Added on Silicon Dioxide (SiO2),” IEEE Sensors Journal, Vol. 6, No. 6, PP. 1468-1472, Dec. 2006
K.C.Chuang and J.G.Hwu*, “Improvement in Electrical Characteristics of High-k Al2O3 Gate Dielectric by Field-Assisted Nitric Oxidation,” Applied Physics Letters, Vol.89, No.23, PP.232903-1~232903-3, Dec. 2006
T.M.Wang, C.H.Chang, S.J.Chang, and J.G.Hwu*, “Comparison of Saturation Current Characteristics for Ultra-thin Silicon Oxides Grown on N- and P-type Silicon Substrates Simultaneously,” Journal of Vacuum Science and Technology A, Vol. 24, No.6, PP.2049-2053, Nov. 2006
S.W.Huang and J.G.Hwu*, “Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors with Al2O3 Gate Dielectrics,” IEEE Transactions on Electron Devices, Vol.53, No.7, PP.1608-1614, Jul. 2006
C.W.Tung, Y.L.Yang and J.G.Hwu*, “Impact of Strain-Temperature Stress on Ultrathin Oxide,” IEEE Transactions on Electron Devices, Vol.53, No.7, PP.1736-1737, Jul. 2006
C.H. Chang, T.M. Wang, and J.G. Hwu*, “Quality Improvement and Electrical characteristics of High-k Films after Receiving Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation,” Electrochemical Society Transactions - Physics and Technology of High-k Gate Dielectric III, Volume 1, Volume 1, Issue 5, PP. 465-475, Jan. 2006
S.W. Huang and J.G. Hwu*, “Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman’s Method,” Electrochemical Society Transactions - Physics and Technology of High-k Gate Dielectric III, Volume 1, Volume 1, Issue 5, PP.789-796, Jan. 2006
C.J.Hung and J.G.Hwu*, “Enhancement in Ultra-thin Oxide Growth by Thermal Induced Tensile Stress,” IEEE Transactions on Device and Material Reliability, Vol.6, No.1, PP.28-32, Jan. 2006
C.H.Huang* and J.G.Hwu, “The Effect of Photon Illumination in Rapid Thermal Processing on The Characteristics of MOS Structures with Ultra-thin Oxides Examined by Substrate Injection,” Solid-State Electronics, Vol.49, No.10, PP.1599-1603, Oct. 2005
T.M. Wang and J.G. Hwu*, “Temperature-Induced Voltage Drop Rearrangement and Its Effect on Oxide Breakdown in MOS Capacitor Structure,” Journal of Applied Physics, Vol.97, No.4, PP.044504-1~5, Apr. 2005
Y.P.Lin and J.G.Hwu*, “Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current,” Journal of The Electrochemical Society, Vol.151, No.12, PP.G853-G857, Dec. 2004
Y.P. Lin and J.G.Hwu*, “Suboxide Characteristics in Ultrathin Oxides Grown under Novel Oxidation Processes,” Journal of Vacuum Science and Technology A, Vol.22, No.6, PP.2265-2272, Nov. 2004
S.W.Huang and J.G.Hwu*, “Ultra-Thin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation,” IEEE Transactions on Electron Devices, Vol.51, No.11, PP.1877-1882, Nov. 2004
Y.L.Yang and J.G.Hwu*, “Quality Improvement of Ultra-Thin Gate Oxide by Using Thermal-Growth Followed by Scanning-Frequency Anodization (SF ANO) Technique,” IEEE Electron Device Letters, Vol.25, No.10, PP.687-689, Oct. 2004
W.J.Liao, Y.L.Yang, S.C.Chuang, and J.G.Hwu*, “Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides,” Journal of The Electrochemical Society, Vol.151, No.9, PP.G549-G553, Sept. 2004
Y.H.Shih, S.R.Lin, T.M.Wang, and J.G.Hwu*, “High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection,” IEEE Transactions on Electron Devices, Vol.51, No.9, PP.1514-1521, Sept. 2004
C.S.Kuo, J.F.Hsu, S.W.Huang, L.S.Lee, M.J.Tsai, and J.G.Hwu*, “High-k Al2O3 Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High Temperature Annealing,” IEEE Transactions on Electron Devices, Vol.51, No.6, PP.854-858, Jun. 2004
Y.P.Lin and J.G.Hwu*, “Quality Improvement in LPCVD Silicon Nitrides by Anodic and Rapid Thermal Oxidations,” Electrochemical and Solid-State Letters, Vol.7, No.5, PP.G87-G89, May 2004
Z.H.Chen, S.W.Huang, and J.G.Hwu*, “Electrical Characteristics of Ultra-thin Gate Oxides (<3nm) Prepared by Direct Current Superposed with Alternating-current Anodization,” Solid-State Electronics, Vol.48, PP.23-28, Jan. 2004
Y.P.Lin and J.G.Hwu*, “Using Anodization to Oxidize Ultra-Thin Aluminum Film for High-K Gate Dielectric Application,” Journal of The Electrochemical Society, Vol.150, No.7, PP.G389-394, Jul. 2003
S.W.Huang and J.G.Hwu*, “Electrical Characterization and Process Control of Cost Effective High-k Aluminum Oxide Gate Dielectrics Prepared by Anodization Followed by Furnace Annealing,” IEEE Transactions on Electron Devices, Vol.50, No.7,, PP.1658-1664, Jul. 2003
C.C.Hong and J.G.Hwu*, “Stress Distribution on (100) Si Wafer Mapped by Novel I-V Analysis of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol.24, No.6, PP.408-410, Jun. 2003
C.C.Hong, W.J.Liao, and J.G.Hwu*, “Thickness-Dependent Stress Effect in P-type Metal-Oxide-Semiconductor Structure Investigated by Substrate Injection Current,” Applied Physics Letters, Vol.82, No.22,, PP.3916-3918, Jun. 2003
C.C. Hong, C.Y.Chang, C.Y.Lee, and J.G.Hwu*, “Thermal Stress at Wafer Contact Points in Rapid Thermal Processing Investigated by Repeated Spike Treatment before Oxidation,” Journal of Applied Physics, Vol.93, No.4, PP.2225-2228, Feb. 2003
C.H.Chen, C.C.Hong, and J.G.Hwu*, “Silicon MOS Solar Cells with Oxide Prepared by Room Temperature Anodization in Hydrofluosilicic Acid (H2SiF6) Solution,” Journal of The Electrochemical Society, Vol.149, No.6, PP.G362-G366, Jun. 2002
J.L.Su, C.C. Hong, and J.G.Hwu*, “Enhanced Thermally-Induced Stress Effect on Ultra-thin Gate Oxide,” Journal of Applied Physics, Vol.91, No.8, PP.5423-5428, Apr. 2002
C.C.Hong, J.L.Chen, and J.G.Hwu*, “Improvement of Oxide Thickness Uniformity by High-Then-Low O2 Pressure Oxidation in Rapid Thermal Processing,” Journal of Vacuum Science and Technology A, Vol.20, No.2, PP.544-548, Mar. 2002
C.C.Hong, Y.R.Yen, J.L.Su, and J.G.Hwu*, “Improvement in Ultra-thin Rapid Thermal Oxide Uniformity by The Control of Gas Flow,” IEEE Transactions on Semiconductor Manufacturing, Vol.15, No.1, PP.102-107, Feb. 2002
J.Y.Yen, C.H.Huang, and J.G. Hwu*, “Effect of Mechanical Stress on the Characteristics of Silicon Thermal Oxides,” Japanese Journal of Applied Physics, Vol.41, Part 1, No.1, PP.81-82, Jan. 2002
C.C.Hong, W.R.Chen, and J.G.Hwu*, “Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide,” Japanese Journal of Applied Physics, Vol.41, Part 1, No.1, PP.1-4, Jan. 2002
C.C.Hong, C.Y.Chang, C.Y.Lee, and J.G.Hwu*, “Reduction in Leakage Current of Low-Temperature Thin Gate Oxide by Repeated Spike Oxidation (RSO) Technique,” IEEE Electron Devices Letters, Vol.23, No.1, PP.28-30, Jan. 2002
C.C.Ting, Y.H. Shih, and J.G.Hwu*, “Ultra Low Leakage Characteristics of Ultra-thin Gate Oxides (~3 nm) Prepared by Anodization Followed by High Temperature Annealing,” IEEE Transactions on Electron Devices, Vol.49, No.1, PP.179-181, Jan. 2002
Y.P.Lin and J.G.Hwu*, “Application of Anodization to Reoxidize Silicon Nitride Film,” Japanese Journal of Applied Physics, Vol.40, Part 1, No.12, PP.6788-6791, Dec. 2001
C.C.Hong and J.G.Hwu*, “Degradation in Metal-Oxide-Semiconductor Structure with Ultrathin Gate Oxide due to External Compressive Stress,” Applied Physics Letters, Vol.79, No.23, PP.3797-3799, Dec. 2001
C.H.Huang and J.G.Hwu*, “Breakdown Characteristics of Ultra-thin Gate Oxides (< 4 nm) MOS Structures Subject to Substrate Injection,” Journal of Vacuum Science and Technology B, Vol.19(5), PP.1894-1897, Sept. 2001
C.C.Hong, T.Y.Lee, Y.L.Hsieh, C.C.Liu, Y.K.Feng and J.G.Hwu*, “Improvement in Oxide Thickness Uniformity by Repeated Spike Oxidation (RSO),” IEEE Transactions on Semiconductor Manufacturing, Vol.14, No.3, PP.227-230, Aug. 2001
Y.H.Shih and J.G.Hwu*, “An on-Chip Temperature Sensor by Utilizing an MOS Tunneling Diode,” IEEE Electron Device Letters, Vol.22, No.6, PP.299-301, Jun. 2001
C.H.Huang and J.G.Hwu*, “Anomalous Low-Voltage Tunneling Current Characteristics of Ultra-Thin Gate Oxide ( ~ 2 nm) after High Field Stress,” Journal of Applied Physics, Vol.89, No.10, PP.5497-5501, May 2001
J.Y.Yen and J.G.Hwu*, “Stress Effect on the Kinetics of Silicon Thermal Oxidation,” Journal of Applied Physics, Vol.89, No.5, PP.3027-3032, Mar. 2001
Y.C.Chen, C.Y.Lee, and J.G.Hwu*, “Ultra-thin Gate Oxides Prepared by Alternating Current Anodization of Silicon Followed by Rapid Thermal Anneal,” Solid State Electronics, Vol.45, PP.1531-1536, 2001
J.Y.Yen and J.G.Hwu*, “Enhancement of Silicon Oxidation Rate due to Tensile Mechanical Stress,” Applied Physics Letters, Vol.76, No.14, PP.1834-1835, Apr. 2000
C.H.Huang and J.G.Hwu*, “Enhancement in Soft Breakdown Occurrence Frequency for Ultra-thin Gate Oxides Caused by Photon Effect in Rapid Thermal Post Oxidation Annealing,” Solid-State Electronics, Vol.44, PP.1405-1410, 2000
Y.H.Shih and J.G.Hwu*, “Improvement in the Electrical Properties of Thin Gate Oxides by Chemical Assisted Electron Stressing Followed by Annealing (CAESA),” IEEE Electron Device Letters, Vol.20, No.11, PP.545-547, Nov. 1999
K. C. Lee, H. Y. Chang, H. Chang, J. G. Hwu* and T. S. Wung, “The Effect of Patterned Susceptor on The Thickness Uniformity of Rapid Thermal Oxides,” IEEE Transactions on Semiconductor Manufacturing, Vol.12, No.3, PP.340-344, Aug. 1999
K. L. Yeh, M. J. Jeng and J.G. Hwu*, “Fluorinated Thin Oxides Prepared by Room Temperature Deposition Followed by Furnace Oxidation (LPD/FO),” Solid State Electronics, Vol.43, pp.671-676, 1999
Y.H.Chen and J.G.Hwu*, “Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation,” IEEE Transactions on Electron Devices, Vol.65, No.11, 4910-4915
S.W.Huang and J.G.Hwu*, “Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior,” IEEE Transactions on Electron Devices, Vol. 69, No.12, 7107-7112
Conference & proceeding papers:
Y.C. Tsai and J.G. Hwu*, “Logic Behavior based on Coupling Phenomenon in Metal-Insulator-Semiconductor Tunnel Diodes (MISTD) with High-Low Structure,” International Electronic Devices and Materials Symposium - IEDMS 2024, IA003, Lihpao Resort Fullon Hotel, Taichung, Taiwan, ROC, Aug. 2024
J. Lan and J.G. Hwu*, “Reduction of leakage and interface trap density in Al/Al2O3/SiO2/4H-SiC(n) MOS structure by Low Thermal Budget Anodization Technique,” International Electronic Devices and Materials Symposium - IEDMS 2024, IB006, Lihpao Resort Fullon Hotel, Taichung, Taiwan, ROC, Aug. 2024
S.W. Huang and J.G. Hwu*, “A TCAD Study of The Oxide Local Thinning (OLT) Gated MIS Tunnel Diodes with Sub-60 mV/decade Subthreshold Swing,” 245th ECS Meeting, G01-151, San Francisco, CA, USA, May 2024
C.Y. Kao and J.G. Hwu*, “Effects of Oxide Charges on the Minority Carrier Response of MOS(p) Devices in Strong Inversion Region,” 245th ECS Meeting, D02-1301, San Francisco, CA, USA, May 2024
S.W. Huang and J.G. Hwu*, “Transient Responses of The Majority and Minority Carriers During Rapid Reduction of The Inversion Charges in an MOS Structure,” 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), T1-20, Ambassador Hotel Hsinchu, Taiwan, ROC, Apr. 2024
R.X. Wang and J.G.Hwu*, “Control of Current Coupling Effect in MIS Tunnel Diode with MISIM Structure for Photosensin,” International Electronic Devices and Materials Symposium - IEDMS 2023, PB1-06, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC, Oct. 2023
Y.Y. Lo and J.G.Hwu*, “Two Transient Capacitance Memory States in Metal-Insulator-Semiconductor Tunneling Diode with High-k Stacking on SiO2,” International Electronic Devices and Materials Symposium - IEDMS 2023, PB1-03, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC, Oct. 2023
W.C.Liao and J.G.Hwu*, “Low Interface Trap Density 4H-SiC Metal-Insulator-Semiconductor Structure with Al2O3 Stacking on Thin SiO2 for Low Thermal Budget Embedded Memory Application,” International Electronic Devices and Materials Symposium - IEDMS 2023, PA2-12, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC, Oct. 2023
J.Y. Lin and J.G.Hwu*, “Improved Transient Behavior of Metal-Insulator-Semiconductor Tunnel Diode by Thickened Oxide at Gate Edge,” International Electronic Devices and Materials Symposium - IEDMS 2023, OB2-1, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC, Oct. 2023
T.M. Kung and J.G.Hwu*, “Logic Gates Based on Coupling Metal-Insulator-Semiconductor Tunnel Diode (MISTD) Using Current Polarity as Logic State,” International Electronic Devices and Materials Symposium - IEDMS 2023, OB3-3, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC, Oct. 2023
S.W. Huang, J.Y. Lin and J.G.Hwu*, “Insights into The TCAD Design of The Oxide Local Thinning Gated MIS Tunnel Diodes with Sub-60 mV/decade Subthreshold Swing,” International Electronic Devices and Materials Symposium - IEDMS 2023, OC1-2, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC, Oct. 2023
H.Y. Lin and J.G. Hwu*, “Two-State Transient Current Enhancement in MIS(p) Tunnel Diode with Reduced Leakage Current By Oxide Removing at Gate Edge,” 243rd ECS Meeting with the 18th International Symposium on Solid Oxide Fuel Cells (SOFC-XVIII), H02-1865, Boston, USA,, May 2023
K.C. Chen, K.W. Lin, and J.G. Hwu*, “Impact of Oxide-Charge-Induced Lateral Coupling on the Electrostatics of Metal-Insulator-Semiconductor Tunnel Diode,” 243rd ECS Meeting with the 18th International Symposium on Solid Oxide Fuel Cells (SOFC-XVIII), H02-1851, Boston, USA,, May 2023
S.W. Huang and J.G. Hwu*, “Improvement in the Transient Behavior of MIS Tunnel Diode with Ultra-Thin Metal Surrounded Gate (UTMSG) by Modulating the Proportion of Surrounding Gate,” 243rd ECS Meeting with the 18th International Symposium on Solid Oxide Fuel Cells (SOFC-XVIII), H02-1850, Boston, USA, May 2023
S.W. Huang and J.G. Hwu*, “Saturation of Transient Current Read at Millisecond-Scale in MOS Capacitor with Ultra-Thin Oxide when Switching,” 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), T1-10, Ambassador Hotel Hsinchu, Taiwan, ROC,, Apr. 2023
Y.T.Sen and J.G.Hwu*, “Multi-Level Characteristics of Scaled Ultrathin Oxide MIS(p) Tunneling Diode by Utilizing Charge Coupling Mechanism with Open Voltage Sensing,” International Electronic Devices and Materials Symposium - IEDMS 2022, Paper No. 5061-SB3-3, National Chi Nan University, Puli, Nantou, Taiwan, ROC, Nov. 2022
K.W.Lin, K.C.Chen and J.G.Hwu*, “An Analytical Electrostatics Model for Reverse Biased Al/SiO2/Si(p) MIS Tunnel Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2022, Paper No. 5098-PB-111, National Chi Nan University, Puli, Nantou, Taiwan, ROC, Nov. 2022
H.Y.Lin and J.G.Hwu*, “Transient Current Enhancement in MIS(p) Tunnel Diode by Oxide Removing at Gate Edge with Enlarged Deep Depletion Phenomenon,” International Electronic Devices and Materials Symposium - IEDMS 2022, Paper No. 5105-PB-112, National Chi Nan University, Puli, Nantou, Taiwan, ROC, Nov. 2022
C.Y.Kao and J.G.Hwu*, “Less Power and Less Read Disturbed Coupling MIS(p) Memory,” International Electronic Devices and Materials Symposium - IEDMS 2022, Paper No. 5016- SB1-1, National Chi Nan University, Puli, Nantou, Taiwan, ROC, Nov. 2022
K.C.Chen, K.W.Lin, S.W.Huang, J.Y.Lin, and J.G.Hwu*, “Oxide-Charge-Induced Lateral Capacitance Contribution on Metal-Insulator-Semiconductor Capacitor at Inversion,” International Electronic Devices and Materials Symposium - IEDMS 2022, Paper No. 5062-PB-109, National Chi Nan University, Puli, Nantou, Taiwan, ROC, Nov. 2022
S.W.Huang, J.Y.Lin, K.C.Chen, and J.G.Hwu*, “Improved Transient Capacitance Window of Metal-Insulator-Semiconductor Tunnel Diode Utilizing AC Lateral Current Induced by Intrinsic Oxide Charge,” International Electronic Devices and Materials Symposium - IEDMS 2022, Paper No. 5035-PB-106, National Chi Nan University, Puli, Nantou, Taiwan, ROC, Nov. 2022
K.C.Chen, K.W.Lin, and J.G.Hwu*, “Theoretical Analysis of Reverse Current of MIS(p) Tunnel Diodes with Oxide Thickness in Ultra-thin Region,” International Electronic Devices and Materials Symposium - IEDMS 2021, No. 1015-C2-1, National Cheng Kung University, Tainan City, Taiwan, ROC, Nov. 2021
K.W.Lin and J.G.Hwu*, “Influence of Local Oxide Thinning Spots on MOS Electrostatics,” International Electronic Devices and Materials Symposium - IEDMS 2021, No. 1017-PO2-46, National Cheng Kung University, Tainan City, Taiwan, ROC,, Nov. 2021
S.W.Huang and J.G.Hwu*, “Capacitance Analysis and Transient Behavior of Ultra Thin Metal Surrounded Gate (UTMSG) Metal-Insulator-Semiconductor Tunnel Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2021, No. 1019 -C2-2, National Cheng Kung University, Tainan City, Taiwan, ROC, Nov. 2021
J.Y.Lin and J.G.Hwu*, “Dependency of Transient Current Behavior on Oxide Thickness in Trench Structure MIS TDs,” International Electronic Devices and Materials Symposium - IEDMS 2021, No. 1032- C3-1, National Cheng Kung University, Tainan City, Taiwan, ROC, Nov. 2021
J.H.Chen and J.G.Hwu*,, “Charge Storage Induced Voltage Sensing Utilizing Coupling Phenomenon between Neighboring MIS Tunneling Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2021, No. 1078-C3-2, National Cheng Kung University, Tainan City, Taiwan, ROC, Nov. 2021
J.C.Lin and J.G.Hwu*, “Enhanced Memory Characteristic of Charge Coupled MIS Tunneling Diodes with Al2O3/AlSiOx/SiO2(AO/ASO/SO) Dielectric Stack,” International Electronic Devices and Materials Symposium - IEDMS 2021, No. 1177-C2-5, National Cheng Kung University, Tainan City, Taiwan, ROC, Nov. 2021
J.Y.Lin and J.G.Hwu*, “Enhanced Memory Properties in MIS TD by Forming Trench Structure at the Gate Edge,” International Electronic Devices and Materials Symposium - IEDMS 2020, 5021, C1-3., Chang Gung University, Tao-Yuan City, Taiwan, ROC,, Oct. 2020
K.C.Chen and J.G.Hwu*, “Turnaround of Coupling Sensitivity in Concentric Metal-Insulator-Semiconductor Tunnel Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2020, 5024, C2-3., Chang Gung University, Tao-Yuan City, Taiwan, ROC, Oct. 2020
J.H.Chen and J.G.Hwu*, “Effect of Oxide Thickness on the Coupling Efficiency in Concentric Metal Insulator Semiconductor (MIS) Tunneling Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2020, 5029, PO2-14, Chang Gung University, Tao-Yuan City, Taiwan, ROC, Oct. 2020
C.Y.Huang and J.G.Hwu*, “Photo-Sensitivity Enhancement and Energy Saving Improvement in Concentric Double MIS devices with Inner Gate Outer Sensor Open-Circuit Operation,” International Electronic Devices and Materials Symposium - IEDMS 2020, 5016, PO2-6, Chang Gung University, Tao-Yuan City, Taiwan, ROC, Oct. 2020
J.G.Hwu* and Y.H.Chen, “Control of Photo Sensing in Concentric Double MIS(p) Tunnel Diodes with Designed Biasing,” 2019 EMN Jeju Meeting, 22-23, Jeju Island, Korea, May 2019
Y.H.Chen and J.G.Hwu*, “Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes,” 235th ECS Meeting, G01:1199-1199, Dallas, Texas, USA, May 2019
J.G.Hwu*, C.F.Yang, and C.S.Liao, “Enhancement of Coupling Effect in Concentric Double MIS Tunnel Diodes with Local Oxide Thinning Mechanism,” WCSM 2019, 5th Annual World Congress of Smart Materials, 2019, 75-75, Rome, Italy, Mar. 2019
J.G.Hwu*, C.F.Yang, C.S.Liao, and H.W.Lu, “Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure,” International Electronic Devices and Materials Symposium - IEDMS 2018, W2A: 24-24, National Taiwan Ocean University, Keelung, Taiwan, ROC (Invite, Nov. 2018
Y.H.Liu and J.G.Hwu*, “Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement,” International Electronic Devices and Materials Symposium - IEDMS 2018, C-170:162-162, National Taiwan Ocean University, Keelung, Taiwan, ROC, Nov. 2018
H.Y.Chen and J.G.Hwu*, “Photo Sensitivity Enhanced By the Modulation of Oxide Thickness in MIS (p) Structure,” 233rd ECS Meeting, M01-2464-M01-2464, Seattle, WA, USA, May 2018
C.H.Chan and J.G.Hwu*, “On/Off Current Ratio Enhancement By Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor,” 233rd ECS Meeting, H02-1459.-H02-1459., Seattle, WA, USA, May 2018
C.T.Lin and J.G.Hwu*, “Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate,” 233rd ECS Meeting, G01-1374-G01-1374, Seattle, WA, USA, May 2018
J.G.Hwu*, C.F.Yang, and C.S.Liao, “Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing,” WCSM 2018, 4th Annual World Congress of Smart Materials,, P.134-P.134, Osaka, Japan, Mar. 2018
T.H.Li, C.S.Liao, and J.G.Hwu*, “Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor,” 232nd ECS Meeting, D01-865-D01-865, National Harbor, MD (greater Washington, DC area), USA, Oct. 2017
C.F.Yang and J.G.Hwu*, “Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals,” 232nd ECS Meeting, D01-0826- D01-0826, National Harbor, MD (greater Washington, DC area), USA, Oct. 2017
C.F.Yang and J.G.Hwu*, “Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals,” 232nd ECS Meeting, D01-0826- D01-0826, National Harbor, MD (greater Washington, DC area), USA, Oct. 2017
J.G.Hwu*, K.H.Tseng, Y.D.Tan, and C.S.Liao, “Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal,” Nano Science & Technology - Nano S&T 2017, P.373.- P.373.(Invited), Fukuoka, Japan, Oct. 2017
W.T.Hou, W.C.Kao, and J.G.Hwu*, “Enhancement of Light-to-Dark Current Ratio Via Coupling Effect for MIS (p) Tunnel Diode Photo Sensors,” 231th ECS Meeting, G02-1277-G02-1277, New Orleans, LA, USA,, May 2017
C.J.Chou and J.G.Hwu*, “Rearrangement of Fringing Field By Sidewall Passivated Metal Gate in MIS Tunnel Diode,” 231th ECS Meeting, G02-1259- G02-1259, New Orleans, LA, USA, May 2017
M.H.Yang and J.G.Hwu*, “MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effect,” 231th ECS Meeting, G02-1257-G02-1257, New Orleans, LA, USA, May 2017
J.G.Hwu*, W.T.Hou, and C.S.Liao, “Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application,” WCSM 2017, 3rd Annual World Congress of Smart Materials, P.145.-P.145. (Invited), Bangkok, Thailand,, May 2017
J.G.Hwu*, “Si MIS Tunnel Diodes for Sensing Applications,” 6th International Symposium on Next Generation Electronics (ISNE, Track 3, 04, P.23.-P.23 (Invited), Keelung, Taiwan,, May 2017
M.H.Yang and J.G.Hwu*, “Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2016, PD-3-PD-3, National Taiwan Normal University, Taipei, Taiwan, ROC, Nov. 2016
C.J.Chou and J.G.Hwu*, “Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate,” International Electronic Devices and Materials Symposium - IEDMS 2016, PD-4-PD-4, National Taiwan Normal University, Taipei, Taiwan, ROC, Nov. 2016
W.T.Hou and J.G.Hwu*, “Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes,” International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award), D2-1-D2-1, National Taiwan Normal University, Taipei, Taiwan, ROC, Nov. 2016
H.H. Lin and J.G. Hwu*, “Local Thinning Induced Less Oxide Breakdown in Mos Structures Due to Lateral Non-Uniformity Effect,” PRiME 2016/230th ECS Meeting, G02: Semiconductors, Dielectrics, and Metals for Nanoelectronics 14, G02-1808-G02-1808, Honolulu, Hawaii, USA, Oct. 2016
C.S. Liao and J.G. Hwu*, “Current Coupling Effect in MIS Tunnel Diode with Coupled Open-Gated MIS Structure,” PRiME 2016/230th ECS Meeting, G02: Semiconductors, Dielectrics, and Metals for Nanoelectronics 14, G02-1810-G02-1810, Honolulu, Hawaii, USA, Oct. 2016
J.G.Hwu*, C.S.Liao, and H.H.Lin,, “Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes,” Nano Science & Technology - Nano S&T 2016 (Invited Talk), 404-404, Singapore, Oct. 2016
J.G.Hwu*, C.S.Liao, and H.H.Lin, “Depletion Behavior in MIS Tunnel Diode for Sensing Application,” WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk), 161-161, Chongqing, China, Jun. 2016
W.C. Kao, J.Y. Chen and J.G. Hwu, “Two States Phenomenon by Neighboring Device Coupling in MIS(p) Tunnel Current,” 229th ECS Meeting, Abstract No. D01-1007, San Diego, California, USA, May 2016
J.Y. Chen, W.C. Kao, and J.G. Hwu, “Lateral Non-Uniformity Reduction By Compensatory Metal Embedded in Mos Structure with Ultra-Thin Anodic Oxide,” 229th ECS Meeting, Abstract No. D01-0993, San Diego, California, USA, May 2016
W.C.Kao and J.G.Hwu, “Effects of Oxide Thickness and Neighboring Device Coupling on MIS(p) Tunnel Curren,” International Electronic Devices and Materials Symposium - IEDMS 2015, Paper No. B2-2., Kun Shan University, Tainan, Taiwan, ROC, Nov. 2015
J.Y.Chen and J.G.Hwu, “Effect of Compensated Aluminum Embedded in MOS Structure on The Reduction of Lateral Oxide Non-uniformity,” International Electronic Devices and Materials Symposium - IEDMS 2015, Paper No. B1-4., Kun Shan University, Tainan, Taiwan, ROC, Nov. 2015
P.K.Chang, and J.G.Hwu, “Reduction of Frequency Dispersion by Inserting Aluminum Layer between Aluminum Oxide and Silicon Oxide in 4H-SiC MOS Structure,” International Electronic Devices and Materials Symposium - IEDMS 2015, Paper No. B3-2, Kun Shan University, Tainan, Taiwan, ROC, Nov. 2015
J.G.Hwu*, C.S.Liao, and H.C.Lin, “MIS(p) Tunnel Diode for Leakage Detection and Transconductance Application,” International Electronic Devices and Materials Symposium - IEDMS 2015, Paper No. B3, Kun Shan University, Tainan, Taiwan, ROC, Nov. 2015
8C.S.Liao and J.G.Hwu, “The Device-Perimeter Dependency in the Transient Current of a Metal-Insulator-Metal-Insulator-Semiconductor Capacitor with Anodic Oxide Films,” 228th ECS Meeting, Abstract No.55316, Phoenix, Arizona, USA, Oct. 2015
H.H.Lin, Y.K.Lin, and J.G.Hwu*, “Non-uniform Hole Current Induced Negative Capacitance Phenomenon Examined by Photo-illumination in MOS(n),” 228th ECS Meeting, Abstract No. 56194, Phoenix, Arizona, USA, Oct. 2015
C.F.Yang and J.G.Hwu*, “Tunneling Current Induced Frequency Dispersion in the C-V Behavior of Ultra-Thin Oxide Mos Capacitors,” 228th ECS Meeting, Abstract No. 55484, Phoenix, Arizona, USA, Oct. 2015
C.S.Liao and J.G.Hwu*, “Negative Gate Transconductance in MIS Tunnel Diode Induced By Peripheral Minority Carrier Control Mechanism,” 228th ECS Meeting, Abstract No. 55313, Phoenix, Arizona, USA, Oct. 2015
C.T.Yang and J.G.Hwu*, “Photosensing in MOS(p) and MOS(n) Photodiodes,” 2015 International Conference on Solid State Devices and Materials, ssdm 2015, Session No: PS. 7-11, Sapporo Convention Center, Sapporo, Japan, Sept. 2015
J.G.Hwu* and H.W.Lu, “Photo Sensitivity Enhancement through Oxide Voltage Drop Modulation Mechanism in MOS Tunneling Diode,” 2015 EMN EAST MEETING – Energy Materials and Nanotechnology (Invited), Paper No. C12, Beijing, China, Apr. 2015
C.K.Kao and J.G.Hwu*, “The Concave I-V Behavior in the Depletion Region of MOS Device with Al2O3-Al-SiO2 Stack Structure,” International Electronic Devices and Materials Symposium - IEDMS 2014, Session 13, Paper No. 1143, Fullon Hotel, Hualien, Taiwan, ROC, Nov. 2014
P.K.Chang and J.G.Hwu*, “Effects of Illumination on Interface Properties of Al/SiO2/n-SiC MOS Structure,” International Electronic Devices and Materials Symposium - IEDMS 2014, Section 5, Paper No. 1342, Fullon Hotel, Hualien, Taiwan, ROC, Nov. 2014
C.F.Yang and J.G.Hwu*, “CV Frequency Dispersion without Interface Trap in Ultra-thin Oxide MOS Structure,” International Electronic Devices and Materials Symposium - IEDMS 2014, Session 15, Paprer No. 1141, Fullon Hotel, Hualien, Taiwan, ROC, Nov. 2014
Y.D.Tang and J.G.Hwu*, “A Transistor-less Memory Cell withPositive/Negative Read Current Transient Characteristic in MOS Structure,” International Electronic Devices and Materials Symposium - IEDMS 2014, Session 18, Paper No. 1124, Fullon Hotel, Hualien, Taiwan, ROC, Nov. 2014
P.H.Tseng, Y.K.Lin, H.W.Lu, Y.C.Liao, and J.G.Hwu*, “Nanoscale Oxide Engineering on Si Substrate,” International Electronic Devices and Materials Symposium - IEDMS 2014, Plenary Session 1, PP.12-14, Fullon Hotel, Hualien, Taiwan, ROC, Nov. 2014
Y.K.Lin and J.G.Hwu*, “Role of Lateral Diffusion Current in Gate Current Characteristics of MOS(p) and MOS(n) Capacitors with Ultrathin (< 3 nm) Oxides,” Nano Science & Technology - Nano S&T 2014, P.153. (invited), Qingdao, China, Oct. 2014
C.S.Pang and J.G.Hwu*, “Improvement of the Breakdown Endurance of High-k HfO2 Dielectric by Stacking Technology,” 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Paper No: 240115, Chang Gung University, Taoyuan, Taiwan, May 2014
P.L.Hsu, C.C.Lin, L. Lin, C.W. Lee, and J.G.Hwu*, “Roles of Diffusion Current and Hole Tunneling Current in Non-uniform Current Conduction for MOS Tunneling Diodes in Inversion Region,” International Electronic Devices and Materials Symposium - IEDMS 2013, Section 5, Paper No.1., November 28-29, National Chi Nan University, Nantou, Taiwan, ROC, Nov. 2013
H.H.Lin and J.G.Hwu*, “Investigation of Inversion Characteristics of Non-planar MOS Structures,” International Electronic Devices and Materials Symposium - IEDMS 2013, Section 5, Paper No.3., National Chi Nan University, Nantou, Taiwan, ROC., Nov. 2013
C.S.Pang and J.G.Hwu*, “Improvement of the Sensitivity of Metal-Oxide-Semiconductor Photo Sensors by Hafnium Oxide/Silicon Dioxide Stack Structure,” International Electronic Devices and Materials Symposium - IEDMS 2013, Section 12, Paper No.1., National Chi Nan University, Nantou, Taiwan, ROC., Nov. 2013
Y.C.Liao and J.G.Hwu*, “Investigation of the Non-uniformity Characteristics of MOS (p) and MOS (n) Structures through Deep Depletion Analysis,” International Electronic Devices and Materials Symposium - IEDMS 2013, Section 5, Paper No.2., National Chi Nan University, Nantou, Taiwan, ROC., Nov. 2013
T.Y.Chen and J.G.Hwu*, “Sensitivity Enhancement of Metal-oxide-semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-thin SiO2 Layer,” 224th ECS Meeting, Abstract No. 1963., San Francisco, California, USA,, Oct. 2013
H.W.Lu and J.G.Hwu*, “Lateral Nonuniformity of the Tunneling Current of Al/SiO2/p-Si Capacitor in Inversion Region due to Edge Fringing Field Effect,” 224th ECS Meeting, Abstract No. 2188., San Francisco, California, USA, Oct. 2013
C.M.Hsu and J.G.Hwu*, “High-k/SiC Structure Examined by Band Alignment Analysis and C-V Dispersion Behavior,” IEEE Nanotechnology Materials and Devices Conference - IEEE NMDC 2013, Paper No. TP-P1-2., National Cheng-Kung University, Tainan, Taiwan,, Oct. 2013
J.G Hwu*, P.L.Hsu, L.Lin and C.W.Lee, “Edge-Dependent I-V Behavior of MOS(p) Structures with Ultrathin Oxides(< 3nm) under Inversion Region,” Nano Science & Technology - Nano S&T 2013, P.266., September 26-28, 2013, Xi’an, China (invited), Sept. 2013
P.H.Tseng and J.G.Hwu*, “Interface Trap Redistribution and Deep Depletion Behavior in Non-planar MOS with Ultra-thin Oxide Grown by Anodic Oxidation,” 223rd ECS Meeting, Abstract No. E2-0772., Toronto, Ontario, Canada, May 2013
C.C.Lin and J.G.Hwu*, “Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Temperature Sensor with Al2O3/SiO2 Dielectric Stacks,” 223rd ECS Meeting, No. J3-1508., Toronto, Ontario, Canada, Abstract, May 2013
P.K.Chang and J.G.Hwu*, “Variations in Effective Areas of Depletion and Deep Depletion Regions from MOS C－V Curves,” International Electronic Devices and Materials Symposia - IEDMS 2012, Paper No. DP23., I-Shou University, Kaohsiung, Taiwan, ROC, Nov. 2012
C.M.Hsu and J.G.Hwu*, “Detection of Carbon Interstitial Distribution of 4H-SiC Capacitors using AES and XPS Analysis,” International Electronic Devices and Materials Symposia - IEDMS 2012, Paper No. CO04., I-Shou University, Kaohsiung, Taiwan, ROC, Nov. 2012
P.H.Tseng and J.G.Hwu*, “Stress Induced Interface Trap Capacitance Redistributions in Non-planar Substrate MOS Structures,” International Electronic Devices and Materials Symposia - IEDMS 2012, Paper No. DO13., I-Shou University, Kaohsiung, Taiwan, ROC, Nov. 2012
C.M.Hsu and J.G.Hwu*, “SiO2 Thickness Dependency of C-V Dispersion in Stacked Al/HfO2/SiO2/4H-SiC Capacitors,” 221st ECS Meeting, Paper No. E1-695., Seattle, Washington, USA, May 2012
P.H.Tseng and J.G.Hwu*, “Electrical Characterization of Al-SiO2-Si Capacitors with Non-p;anar Gate Oxides,” International Electronic Devices and Materials Symposia - IEDMS 2011, Paper No. D2-3., National Taiwan University of Science and Technology, Taipei, T, Nov. 2011
J.C.Chiang and J.G.Hwu*, “Two-State Trap-Assisted Tunneling Current Characteristics of High-k/SiO2 Stacked Structure with High Bandgap Substrate,” International Electronic Devices and Materials Symposia - IEDMS 2011, Paper No. D3-2., National Taiwan University of Science and Technology, Taipei, Ta, Nov. 2011
C.C.Lin and J.G.Hwu*, “Electrical Characteristics and Temperature Response of Al2O3 Gate Dielectrics with and without Nitric Acid Compensation,” 220h ECS Meeting, Paper No. E4-1920., Boston, MA, USA, Oct. 2011
J.G.Hwu*, “Fringing Field Induced Deep Depletion in MOS Devices with Ultra-thin Gate Dielectrics,” IEEE Mini-Colloquia 2011, New Concept for Advanced Electronic Device, Presentation No. IV., I-Shou University, Kaohsiung, Taiwan , ROC., Oct. 2011
C.Y.Wang, H.W.Lu, and J.G.Hwu*, “Photovoltaic Characteristics of MOS Structure with Photo Enhanced Trap Assist Tunneling Current by Oxide Etching,” IEEE International NanoElectronics Conference – 2011 IEEE INEC, Paper No. G3-12., Chang Gung University, Taiwan, Jun. 2011
J.C.Chiang and J.G.Hwu*, “Two-State Current Conduction in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate,” 219th ECS Meeting, Paper No. E9-1484., Montreal, QC, Canada, May 2011
T.Y.Chen, H.W.Lu and J.G.Hwu*, “Influence of Residual Ions and Gases at Si/SiO2 Interface in Ultra-Thin Gate Oxide,” 219th ECS Meeting, Paper No. E6-1340., Montreal, QC, Canada, May 2011
H.W.Lu, T.Y.Chen and J.G.Hwu*, “Electrical Characteristics Analysis at Oxide Flat-band Voltage for Al-SiO2-Si Capacitor,” 219th ECS Meeting, Paper No. E7-04490., Montreal, QC, Canada, May 2011
J.Y.Cheng, C.Y.Yang, and J.G.Hwu*, “Edge Field Enhanced Deep Depletion Phenomenon in MOS Structures with Ultra-thin Gate Oxides,” 10th International Conference on Solid State and Integrated Circuit Technology ICSICT’2010 (invited), Proceedings (part 2 of 3) PP.844, Shanghai, China., Nov. 2010
C.M.Hsu and J.G.Hwu*, “Low-Temperature and Cost-Effective Al2O3 Prepared by Anodization in Ammonium Adipate Solution,” International Electronic Devices and Materials Symposia - IEDMS 2010, Paper No. D5-4., Kuva Chateau, Chung Li, Taiwan, ROC, Nov. 2010
T.U.Chen, H.W.Lu, and J.G.Hwu*, “Improvement in the Reliability of Ultra-thin Gate Oxide by Room Temperature Vacuum Treatment,” International Electronic Devices and Materials Symposia - IEDMS 2010, Paper No. D4-5., Kuva Chateau, Chung Li, Taiwan, ROC, Nov. 2010
H.W.Lu, T.U.Chen, and J.G.Hwu*, “A Novel Methodology to Extract Ultra-thin Dielectric Thickness (<1.8nm) by Analyzing Current Behavior at Oxide Flat-band Voltage,” International Electronic Devices and Materials Symposia - IEDMS 2010, Paper No. D4-6., Kuva Chateau, Chung Li, Taiwan, ROC, Nov. 2010
J.Y.Cheng and J.G.Hwu*, ““Investigation of Illuminated High-Frequency Capacitance-Voltage Response in Deep Depletion of HfO2 and SiO2 MOS Capacitors with Ultra-thin Gate Oxides,” 2010 International Conference on Solid State Devices and Materials, SSDM 2010., P-3-19, PP.289-290., The University of Tokyo, Tokyo, Japan., Sept. 2010
C.Y.Wang and J.G.Hwu*, “Trench Structure Metal-Oxide-Semiconductor (MOS) Solar Cells with Oxides Prepared by Anodization Technique,” The 15th OptoElectronics and Communications Conferences, OECC 2010, Technical Digest 7P-55, PP.366-3, Sapporo Convention Center, Sapporo, Japan., Jul. 2010
C.Y.Yang, C.M.Hsu and J.G.Hwu*, “Sensitive MOS Photo-detector with Stacking Structure of SiO2/HfO2,” Symposium on Nano Device Technology, SNDT 2010 (invited), Abstract Digest, P.9, S1-1., Hsinchu, Taiwan, National Nano Device Laboratories, May 2010
C.M.Hsu, C.Y.Yang, and J.G.Hwu*, “Characterization of 4H-SiC MOS Capacitor with Ultrathin Al2O3 Gate Dielectric Prepared by Sputtering in Oxygen Ambient,” International Electronic Devices and Materials Symposia - IEDMS 2009, Paper No.122, Chang Gung University, Kweishan, Taoyuan, Taiwan, ROC, Nov. 2009
H.Y.Chiang and J.G.Hwu*, “Improvement in the Electrical Characteristics of Sputtered Al2O3 Dielectric Layers with the Compensation of Anodization in HNO3,” International Electronic Devices and Materials Symposia - IEDMS 2009, Paper No. 158., Chang Gung University, Kweishan, Taoyuan, Taiwan, ROC, Nov. 2009
J.C.Chiang and J.G.Hwu*, “4H-SiC MOS Structure with Aluminum Oxide Stacked on Interfacial Oxide Prepared by UV Light-Assist Anodization,” International Electronic Devices and Materials Symposia - IEDMS 2009, Paper No. 133, Chang Gung University, Kweishan, Taoyuan, Taiwan, ROC, Nov. 2009
J.Y.Cheng, C.T.Huang, and J.G.Hwu*, “Comparison of Lateral Non-uniformity Phenomena between HfO2 and SiO2 from Magnified C-V Curves in Inversion Region,” 216th ECS Meeting, PP.327-338, Vienna, Austria, Oct. 2009
C.Y.Wang and J.G.Hwu*, “Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors,” 216th ECS Meeting, PP.361-370, Vienna, Austria, Oct. 2009
C.Y.Yang and J.G.Hwu*, “Characteristics and Reliability of Low-Temperature Aluminum Oxide Dielectric Stacks Prepared by DC-Sputter of Aluminum Target Injected with Oxygen and Followed by Compensation in Nitric Acid,” Euro Nano Forum 2009 – Nanotechnology for Sustainable Economy, European and International Forum on Nanotechnology, Proceedings, P-116, Prague, Czech Republic, Jun. 2009
J.C.Tseng* and J.G.Hwu, 2009, “Characterization of the Electrostatic Discharge Induced Interface Traps in Metal-Oxide-Semiconductor Field Effect Transistors,” 2009 IEEE International Reliability Physics Symposium, EL.6., Fairmont The Queen Elizabeth, Montreal, Quebec, Canada, Apr. 2009
J.Y.Cheng, C.T.Huang and J.G.Hwu*, “Study on CV/IV Behaviors of the MOS Structure in Deep Depletion Region,” Symposium on Nano Device Technology, SNDT 2009, P.7, A1-1 (invited), Hsinchu, Taiwan, National Nano Device Laboratories, Apr. 2009
C.M Hsu, K.C.Chuang, C.Y.Yang, and J.G.Hwu*, “Ultrathin Anodized Aluminum Oxide on 4H-SiC MOS Capacitors Grown in Ammonium Adipate Solution,” International Electronic Devices and Materials Symposia - IEDMS 2008, BO-504, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
H.L.Chen, C.J.Lee, and J.G.Hwu*, “Effect of Tensile Stress on MOS Capacitors with Ultra-thin Gate Oxides,” International Electronic Devices and Materials Symposia - IEDMS 2008, CO-437, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
P.K.Chang and J.G.Hwu*, “Determination of Ultrathin Oxide Thickness from Depletion Region of C-V Curves,” International Electronic Devices and Materials Symposia - IEDMS 2008, CO-525, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
C.H.Chang and J.G.Hwu*, “Characteristics of Metal-Al2O3-HfO2-Oxide-Silicon (MAHOS) Flash Devices Prepared by Cost-Effective in-situ Oxidation Method,” International Electronic Devices and Materials Symposia - IEDMS 2008, AO-502, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
C.Y.Yang, C.M Hsu, and J.G.Hwu*, “Low Temperature Tandem Al2O3 Gate Dielectrics Prepared by DAC-ANO Compensation in Nitric Acid,” International Electronic Devices and Materials Symposia - IEDMS 2008, BO-504, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
H.T.Lu and J.G.Hwu*, “Nonuniformity Characterization of MOS Structure with HfO2 Dielectric Layer Based on C-V Measurement in Deep Depletion Region,” International Electronic Devices and Materials Symposia - IEDMS 2008, CO-444, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
C.H.Chen and J.G.Hwu*, “Investigation of Low-Temperature-Processing Al2O3/Al-Si-O Gate Dielectrics Prepared by Nitric Acid Oxidation for MOS Devices,” International Electronic Devices and Materials Symposia - IEDMS 2008, CO-438, National Chung Hsing University, Taichung, Taiwan, ROC, Nov. 2008
K.C.Chuang, C.M.Hsu, and J.G.Hwu*, “Frequency Dispersion in Capacitance-Voltage Characteristics in SiC MOS Capacitors,” International Electronic Devices and Materials Symposia - IEDMS 2008, BP-443, National Chung Hsing University, Taichung, Taiwan, Nov. 2008
C.Y.Wang and J.G.Hwu*, “Low-Temperature Processing Metal-Oxide-Semiconductor (MOS) Structure Solar Cell Prepared by Cost-Effective Anodization Technique,” Fourth International Workshop on New Group IV Semiconductor Nanoelectronics, PP.11-12., Laboratory for Nanoelectronics and Spintronics, Research Institu, Sept. 2008
Y.H. Shih, S.R.Lin, T.M.Wang, H.P.Lin, J.C.Tseng, and J.G.Hwu*,, “Temperature Sensing Application and Lateral Non-uniformity Phenomenon for MOS Capacitors with Ultra-thin Gate Oxides,” NSC-JST Nano Device Workshop, invited, National Taiwan University, Taipei, Taiwan, Republic of China., Jul. 2008
S.J.Chang, T.M.Wang, and J.G.Hwu*, ““Investigation of the Mechanism of Negative Capacitance Occurred in MOS Capacitors with Ultra-thin Oxides on N-type Substrates,” Proceedings of International Electronic Devices and Materials Symposium - IEDMS 2007, National Tsing-Hua University, Hsinchu, Taiwan, Republic of Chin, Dec. 2007
P.K.Chang and J.G.Hwu*, “Application Boundary for Ultrathin Oxide Thickness Determination by Linear Regression Technique,” Proceedings of International Electronic Devices and Materials Symposium - IEDMS 2007, National Tsing-Hua University, Hsinchu, Taiwan, Republic of Chin, Dec. 2007
C.H.Chang and J.G.Hwu*, “Low Temperature (Tmax=380 0C) Ultra-thin Hafnium Oxide Stacks with Terraced Structures on A Single Wafer by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation,” Proceedings of International Electronic Devices and Materials Symposium - IEDMS 2007, National Tsing-Hua University, Hsinchu, Taiwan, Republic of Chin, Dec. 2007
K.C.Chuang and J.G.Hwu*, “Reduction of Oxide Charge and Interface-Trap Density in Silicon Oxide on N-Type 4H-SiC Prepared by Scanning Frequency Anodization Method,” Proceedings of International Electronic Devices and Materials Symposium - IEDMS 2007, National Tsing-Hua University, Hsinchu, Taiwan, Republic of Chin, Dec. 2007
C.N.Lin, Y.L.Yang, W.T.Chen, S.C.Lin, and J.G.Hwu*, “Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides,” IEEE International Conference on Electron Devices and Solid-State Circuits, Tayih Landies Hotel, Tainan, Taiwan, Republic of China., Dec. 2007
K.C.Chuang and J.G.Hwu*, “Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method,” International Conference on Solid State Devices and Materials (SSDM2007), G-6-5, PP.808-809, Tsukuba, Japan, Sept. 2007
C.H.Chang and J.G.Hwu*, “Low Temperature Ultra-thin Hafnium Oxide Dielectrics by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation then Anodization Compensation in D. I. Water,” International Conference on Solid State Devices and Materials (SSDM2007), F-5-4, PP.780-781, Tsukuba, Japan, Sept. 2007
K.C.Chuang and J.G.Hwu*, “Electrical Characteristics of Silicon Oxide Film Grown by Anodic Oxidation in Nitric Acid at Low Temperature,” Proceedings of International Electronic Devices and Materials Symposium, Vol. B & C, PP.112-113, National Cheng-Kung University, Tainan, Taiwan, Republic of Chin, Dec. 2006
C.H.Chang, and J.G.Hwu*, “Anodic Oxidation (ANO) Compensation Effect on The Leakage Reduction of Low Temperature High-k Al2O3 Dielectrics as Prepared byTilted Evaporation of Aluminum Followed by Nitric Acid Oxidation,” Proceedings of International Electronic Devices and Materials Symposium, Vol. A & D, PP.252-253, National Cheng-Kung University, Tainan, Taiwan, Republic of Chin, Dec. 2006
H.P.Lin and J.G.Hwu*, “Using QM-based Terman method as a direct index of the Lateral Nonuniformities of Charges in the Dielectric Layer of MOS Capacitors,” Proceedings of International Electronic Devices and Materials Symposium, Vol. A & D, PP.297-298, National Cheng-Kung University, Tainan, Taiwan, Republic of Chin, Dec. 2006
Y.L.Yang, C.H.Chang, Y.H.Shih, K.Y.Hsieh, and J.G.Hwu*, “Hydrogen Eraser for Tightening VT Distribution of Nitride Trapping Memory,” Proceedings of International Electronic Devices and Materials Symposium, Vol. A & D, PP.303-304, National Cheng-Kung University, Tainan, Taiwan, Republic of Chin, Dec. 2006
P.K.Chang, and J.G.Hwu*, “Ultrathin Gate Oxide Thickness (＜2.0 nm) Extraction TechniqueBased on Low Dissipation Factor Regions of MOS C－V Curves,” Proceedings of International Electronic Devices and Materials Symposium, Vol. A & D, PP.42-45, National Cheng-Kung University, Tainan, Taiwan, Republic of Chin, Dec. 2006
J.G. Hwu*, “Silicon MOS Structures with Ultra-Thin Gate Dielectrics,” The Conference on the Micro/Nano Technology between Taiwan and Scotland, PP.22-30, National Formosa University, Fu-Wei, Yun-Lin, Taiwan, Dec. 2006
T.M. Wang, S.J. Chang and J.G. Hwu*, “Comparison of Suboxide Characteristics for Ultra-thin Silicon Oxides Grown on N- and P-type Substrates Simultaneously,” Proceedings of Electronic Devices and Materials Symposium, Paper No.CO15, I-Shou University, Kaohsiung, Taiwan, Republic of China, Nov. 2005
T.H. Li and J.G. Hwu*, “Reduction in Leakage Current in Ultra-thin Gate Oxides by Tensile-Stress Anodization,” Proceedings of Electronic Devices and Materials Symposium, Paper No.CO17, I-Shou University, Kaohsiung, Taiwan, Republic of China, Nov. 2005
H.P. Lin and J.G. Hwu*, “Direct Observation of the Lateral Nonuniformities of Charges in the Dielectric Layer of MOS Capacitors by Terman Method,” Proceedings of Electronic Devices and Materials Symposium, Paper No. AO05, I-Shou University, Kaohsiung, Taiwan, Republic of China, Nov. 2005
C.H. Chang and J.G. Hwu*, “Application of the Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation Technique to Improve the Quality and Electrical Characteristics of Devices with High-k Gate Dielectrics,” Proceedings of Electronic Devices and Materials Symposium, Paper No. CO13, I-Shou University, Kaohsiung, Taiwan, Republic of China, Nov. 2005
C.H. Chang, T.M. Wang, and J.G. Hwu*, “Quality Improvement and Electrical characteristics of High-k Films after Receiving Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation,” 208th Meeting of The Electrochemical Society, Paper No.550, Westin Bonaventure, Los Angeles, California, USA, Oct. 2005
S.W. Huang and J.G. Hwu*, “Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman’s Method,” 208th Meeting of The Electrochemical Society, Paper No.577, Westin Bonaventure, Los Angeles, California, USA, Oct. 2005
J.G. Hwu*, “Process and Application of Silicon MOS Structures with Ultra-Thin Gate Dielectrics,” Scotland-Taiwan Hi-Tech Forum: Micronanotechnology Workshop, (invited), The Royal Society of Edinburgh, Edinburgh, Scotland, Oct. 2005
T.M. Wang and J.G. Hwu*, “Temperature-Induced Voltage Drop Rearrangement and Its Effect on Oxide Breakdown in MOS Capacitor Structure,” International Electronic Devices and Materials Symposium,, PP.319-322, December 20-23, Shin-Chu, Taiwan, Republic of China, Dec. 2004
C.H. Chang, L.S. Lee, M.J. Tsai, and J.G. Hwu*, “Electrical characteristics of high-k HfO2 gate dielectrics prepared by oxidation in HNO3 followed by rapid thermal annealing in N2,” International Electronic Devices and Materials Symposium, PP.95-98, December 20-23, Shin-Chu, Taiwan, Republic of China, Dec. 2004
J.G. Hwu*, “Thin Gate Dielectrics – Process and Application,” IMEC-Taiwan NSC Workshop on Nanotechnology on the occasion of IMEC’s 20th Anniversary,, (invited talk), September 24, Leuven, Belgium, Sept. 2004
C.S.Kuo, L.S.Lee, M.J.Tsai, and J.G.Hwu*, “Ultra-thin HfO2 Gate Dielectrics Prepared by Oxidation of Hf Metal Film in Nitric Acid Followed by High Temperature Anneal,” International Symposium on Nanoelectronic Circuits and Giga-scale Systems (ISNCGS 2004), PP.51-55, February 12-13, Miao-Li, Taiwan, Feb. 2004
Y.P.Lin and J.G.Hwu*, “MOS Tunneling Diodes with Ultra-thin Oxides of N-type and P-type Silicon Substrates,” International Symposium on Nanoelectronic Circuits and Giga-scale Systems (ISNCGS 2004), PP.56-60, February 12-13, Miao-Li, Taiwan, Feb. 2004
S.W.Huang, H.L Tsai, J.R.Yang, C.W.Hsu, C.W.Hsiung, and J.G.Hwu*, “Alternative Nano-Scale Gate Dielectric on 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation of Ultra-thin Aluminum Film,” International Symposium on Nanoelectronic Circuits and Giga-scale Systems (ISNCGS 2004), PP.35-39, February 12-13, Miao-Li, Taiwan, Feb. 2004
Y.P.Lin and J.G.Hwu*, “The Role of Suboxide in N-type and P-type MOS Diodes,” Proceedings of Electronic Devices and Materials Symposium, PP.783-786, Keelung, Taiwan, Nov. 2003
S.W Huang, C.W Hsu , C.W Hsiung, and J.G Hwu*, “Process Technologies of SiO2 and Al2O3 Gate Dielectrics on 4H-SiC,” Proceedings of Electronic Devices and Materials Symposium, PP.791-794, Keelung, Taiwan, Nov. 2003
C.S Kuo, J.F Hsu, and J.G Hwu*, “Characterization of Metal-Insulator-Semiconductor Structure with High-k Al2O3 Gate Dielectrics,” Proceedings of Electronic Devices and Materials Symposium, PP.681-684, Keelung, Taiwan, Nov. 2003
T.M Wang,S.R Lin and J.G Hwu*, “MOS Tunneling Temperature Sensors for Detecting The On-chip Temperature Distribution,” Proceedings of Electronic Devices and Materials Symposium, PP.753-756, Keelung, Taiwan, Nov. 2003
H.P Lin and J.G Hwu*, “Observation of The Change of Current Uniformities of MOS(P) Structures with Oxides Grown from 7400C to 8400C,” Proceedings of Electronic Devices and Materials Symposium, PP.734-737, Keelung, Taiwan, Nov. 2003
Y.P.Lin and J.G.Hwu*, “Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films,” 203 Meeting of The Electrochemical Society, De Palais des Congres, G1-Seventh International Symposium on Sil, 2003
S.R.Lin and J.G. Hwu*, “High Sensitive MOS Tunneling Temperature Sensors for On-Chip Temperature Detection,” Proceedings of 2002 International Electron Devices and Materials Symposia, PP.469-472, Taipei, Taiwan, Republic of China, Dec. 2002
Y.P Lin and J.G. Hwu*, “Low Interface States Al2O3/SiO2 Stacked Dielectric Structure with One Step Anodic Oxidation Followed by Rapid Thermal Annealing,” Proceedings of 2002 International Electron Devices and Materials Symposia, PP.94-97, Taipei, Taiwan, Republic of China, Dec. 2002
S.W. Huang and J.G. Hwu*, “Characterization of MOS Structure with Aluminum Oxide Gate Dielectric,” Proceedings of 2002 International Electron Devices and Materials Symposia, PP.429-432, Taipei, Taiwan, Republic of China, Dec. 2002
Y. P. Lin, Z. H. Chen, and J. G. Hwu*, “SiO2/Si Suboxide Characteristics of Ultra-Thin Gate Oxides Prepared by Room Temperature Anodic Oxidation and Rapid Thermal Oxidation,” International Conference on Solid State Devices and Materials, PP.708-709, Nagoya Congress Center, Tokyo, Sept. 2002
Y.P.Lin and J.G.Hwu*, “Ultrathin Aluminum Oxide Gate Dielectric Prepared by Anodization Followed by Rapid Thrmal Anneal,” 201st Meeting of The Electrochemical Society, Centennial Meeting, Volume 2002-1, A, Philadelphia, USA, May 2002
C.C.Hong nad J.G.Hwu*, “The Wafer Cutting Effect on the Substrate Injection Current of MOS Devices,” Proceedings of Electronic Devices and Materials Symposium, PP.33-36, Kaohsiung, Taiwan, Dec. 2001
Y.P.Lin and J.G.Hwu*, “Ultra-thin Aluminum Oxide Gate Dielectric Prepared by Anodization,” Proceedings of Electronic Devices and Materials Symposium, PP.798-799, Kaohsiung, Taiwan, Dec. 2001
Y.H.Shih and J.G.Hwu*, “A Polarity Dependent Breakdown Model of Ultra-thin Gate Oxides,” Proceedings of Electronic Devices and Materials Symposium, PP.46-49, Kaohsiung, Taiwan, Dec. 2001
C.C.Hong and J.G.Hwu*, “Repeated Pulse-Heating Process in Rapid Thermal System,” The 5th Nano Engineering and Micro System Technology Workshop, Shin-Chu, Taiwan, Dec. 2001
J.G.Hwu*, C.Y.Lee, C.C.Ting, and W.L.Chen, “Novel Ultra Thin Gate Oxide Growth Technique by Alternating Current Anodization,” 6th International Conference on Solid-State and Integrated Circuit Technology Proceedings, Volume 1,PP.309-, Shanghai, China, Oct. 2001
J.G. Hwu* and Y.H. Shih, “Utilizing an MOS Tunneling Diode as an On-Chip Temperature Sensing Device,” Tenth Canadian Semiconductor Technology Conference, P.139, Chateau Laurier Hotel, Ottawa, Canada, Aug. 2001
J.G. Hwu*, “Application of Novel Oxidation to Prepare Si Nanostructure Devices,” 2001 NSC-NRC Workshop on Nano Device Technology and Nano Electronics, P.10. (invited), Sussex Drive, Room 3001, Ottawa, Canada, Aug. 2001
C.C.Hong, C.Y.Chang, C.H.Chen, and J.G.Hwu*, “Repeated Spike Technology Employed in Rapid Thermal Processing,” International Conference on Solid State Devices and Materials, PP.166-167, Tokyo,Diamond Hotel, A-4-2, 2001
C.H. Chen and J.G. Hwu*, “Silicon MOS Solar Cells with Oxide Prepared by Room Temperature Anodization in Saturated Hydrofluosilicic Acid (H2SiF6) Solution,” Proceedings of 2000 International Electron Devices and Materials Symposia Chung-Li, PP.121-124, Taiwan, Republic of China, Symposium A, Dec. 2000
J.Y. Yen and J.G. Hwu*, “Stress Effect on the Kinetics of Silicon Thermal Oxidation,” Proceedings of 2000 International Electron Devices and Materials Symposia, PP.198-201, Chung-Li, Taiwan, Republic of China, Symposium A, Dec. 2000
C.H. Hung and J.G. Hwu*, “Role of Interface Trap Generation in the Low-Voltage Tunneling Current (LVTC) Characteristics of Ultra-Thin Gate Oxide (~2nm) under High Field Stress,” Proceedings of 2000 International Electron Devices and Materials Symposia, PP.90-93, Chung-Li, Taiwan, Republic of China, Symposium A, Dec. 2000
Y.R. Yen, J.L. Su, and J.G. Hwu*, “Improvement in Rapid Thermal Oxide Thickness Uniformity by the Control of Gas Flow,” Proceedings of 2000 International Electron Devices and Materials Symposia, PP.109-112, Chung-Li, Taiwan, Republic of China, Symposium A, Dec. 2000
Y.H. Shih and J.G. Hwu*, “Degradation of Silicon near SiO2/Si Interface with Time after Post Oxidation Anneal (POA),” Proceedings of 2000 International Electron Devices and Materials Symposia, PP.31-34, Chung-Li, Taiwan, Republic of China, Symposium A, Dec. 2000
C.C. Hong, T.Y. Lee, and J.G. Hwu*, “Application of Repeated Spike Oxidation (RSO) Technology to Thin Gate Oxide Growth,” Proceedings of 2000 International Electron Devices and Materials Symposia Chung-Li, PP.125-128, Taiwan, Republic of China, Symposium A, Dec. 2000
C.H. Huang and J.G. Hwu*, “The Breakdown Properties of Front- and Back-side Post Oxidation Annealed (POA) Ultrathin Gate Oxide (<3 nm) under High Field Stress,” Proceedings of Electronic Devices and Materials Symposium, PP.527-530, Taoyuan, Taiwan, Republic of China, Dec. 1999
Y.H. Shih and J.G. Hwu*, “Improvement of Thin Gate Oxide’s Reliability by Current Stress Followed by Rapid Thermal Annealing,” Proceedings of Electronic Devices and Materials Symposium, PP.531-534, Taoyuan, Taiwan, Republic of China, Dec. 1999
C.C. Ting and J.G. Hwu*, “Characteristics of Ultra-thin Gate Oxides ( ~ 3 nm) Prepared by Anodization in Deionized Water and Then Followed by High Temperature Anneal,” Proceedings of Electronic Devices and Materials Symposium, PP.37-40, Taoyuan, Taiwan, Republic of China, Dec. 1999
Y.H. Yeh and J.G. Hwu*, “Effect of Irradiation then Post Oxidation Annealing on Thin Gate Oxide,” Proceedings of Electronic Devices and Materials Symposium, PP.59-60, Taoyuan, Taiwan, Republic of China, Dec. 1999
J.L. Chen, C.C. Hong, Y.R. Yen, and J.G. Hwu*, “Improvement in Rapid Thermal Thin Oxide Uniformity by Low Pressure Oxidation,” Proceedings of Electronic Devices and Materials Symposium, PP.159-162, Taoyuan, Taiwan, Republic of China, Dec. 1999
J.Y. Yen and J.G. Hwu*, “Effect of Mechanical Stress on Thermal Oxidation of Silicon,” Proceedings of Electronic Devices and Materials Symposium, PP.115-118, Taoyuan, Taiwan, Republic of China, Dec. 1999
Patents:
Jenn-Gwo Hwu and Tzu-Hao Chiang, “Memory Device and Manufacturing Method Thereof”,” US 11,532,669 B2, Dec. 2022
Jenn-Gwo Hwu, Bo-Jyun Chen, and Kuan-Wun Lin, “Memory Devices and Manufacturing Method Thereof,” US 11,195,835 B2, Jul. 2021
Jenn-Gwo Hwu and Tin-Hao Hsu,, “Semiconductor Device and Operation Method Thereof,” US 10,958,216 B2, Mar. 2021
Jenn-Gwo Hwu , Wei-Chih Kao, and Chien-Shun Liao, “Charge Storage and Sensing Devices and Methods,” US 10,651,300 B2, May 2020
Jenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yang, and Samuel C. Pan, “Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) Device, Method of Operation, and Memory Device Including The Same,” US 10,515,998 B2, Dec. 2019
Jenn-Gwo Hwu, Samuel C. Pan, Kuan-Hao Tseng, and Chien-Shun Liao, “A Semiconductor Memory Device,” US 10,381,353 B2, Aug. 2019
Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, and Chi-Wen Liu,, “Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation,” U.S.A. Patent, Patent No.: US 9,812,395 B2, Nov. 2017
Jenn-Gwo Hwu, Samuel C. Pan, and Chien-Shun Liao, “Double Exponential Mechanism Controlled Transistor,” U.S.A. Patent, Patent No.: US 9,748,379 B2, Aug. 2017
Jenn-Gwo Hwu, Wei-Cheng Tian, and Po-Hao Tseng, “Systems and Methods for Forming Nanowires Using Anodic Oxidation,” U.S.A. Patent, Patent No.: US 9,528,194 B2, Dec. 2016
陳姿妤, 胡振國, “金氧半結構的記憶體元件及其製造方法,” 中華民國專利 —證書號-發明第 I 467754號, Jan. 2015
Jenn-Gwo Hwu and Yen-Hao Shih, “Method for Improving The Electrical Properties of A Gate Oxide,” U.S.A. Patent —Issued / Filed Dates – March 5, 2002 / February, 2002
Jenn-Gwo Hwu and Ming-Jer Jeng, “Method for Making A Silicon Dioxide Layer on A Silicon Substrate by Pure Water Anodization Followed by Rapid Thermal Densification,” U.S.A. Patent —Issued / Filed Dates-April 7, 1998 / March 20, 1, 1998
Wei-Shin Lu and Jenn-Gwo Hwu, “Method for Manufacturing Fluorinated Gate Oxide Layer,” U.S.A. Patent — Issued / Filed Dates-Nov. 4, 1997 / Dec.1, 1995, 1997
Ming-Jer Jeng and Jenn-Gwo Hwu, “Method for Making A Fluorinated Silicon Dioxide Layer on Silicon Substrate by Anodic Oxidation at Room Temperature,” U.S.A. Patent — Issued / Filed Dates-April 1, 1997 / May 1, 199, 1997
Jenn-Gwo Hwu, Wei-Cheng Tian, and Po-Hao Tseng, “Systems and Methods for Forming Nanowires Using Anodic Oxidation,” USA (pending)
Jenn-Gwo Hwu and Wei-Cheng Tian, “Antifuse Array and Method of Forming Antifuse Using Anodic Oxidation,” USA (pending)
Jenn-Gwo Hwu and Wei-Cheng Tian, “Low-K Interconnect Structure and Forming Method Thereof,” USA (pending)
Jenn-Gwo Hwu and Chien-Shun Liao, “Double Exponential Mechanism Controlled Transistor,” USA (pending)
other:
J.G.Hwu, “Research and Development of Micro Electronics Division (1/3),” Sept. 2006, NSC94-2217-E-002-016
J.G.Hwu, “Study of Advanced CMOS Devices and Processes (1/3),” May 2006, NSC94-2215-E-002-047
J.G.Hwu, “Technologies of Forming High Quality Insulating Films for Low Substrate Temperature Process (1/3),” May 2006, NSC94-2215-E-002-044
J.G.Hwu, “Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (1/3),” May 2005, NSC93-2215-E-002-016
J.G.Hwu, “Study on the Oxide Uniformity and Stress Effect in Rapid Thermal Processing (3/3)”,” May 2005, NSC93-2215-E-002-001
J.G.Hwu, “on Rapid Thermal Equipment and Process (3/3),” Sept. 2002, NSC90-2212-E-002-224
J.G.Hwu, “Repeated Pulse-Heating Process in Rapid Thermal System (3/3),” Sept. 2002, NSC90-2212-E-002-225
J.G.Hwu, “Development of Si Novel Devices and Module Technology (1/3),” May 2002, NSC90-2215-E-002-032
J.G.Hwu, “Application of Ultra-thin Film Oxidation Technology on Si Devices (1/3),” May 2002, NSC90-2215-E-002-033
J.G.Hwu, “Application of Oxidation in Liquid and Irradiation Technique to the Fabrication Process of Ultra-thin Gate Oxides,” Sept. 2001, NSC89-2215-E-002-042
J.G.Hwu, “Studies on Rapid Thermal Equipment and Process (2/3),” May 2001, NSC89-2218-E-002-084
J.G.Hwu, “Repeated Pulse-Heating Process in Rapid Thermal System (2/3),” May 2001, NSC89-2218-E-002-085
J.G.Hwu, “Temperature Uniformity Compensation Technology for Wafers in Rapid Thermal Processor,” Oct. 2000, Knowledge Bridge (知識創新), No.4, October, P.2, (invited)
J.G.Hwu, “A Study of the Process Development for Reliable Ultra-thin Gate Oxide with Low Leakage Property,” Sept. 2000, NSC89-2215-E-002-010
J.G.Hwu, “Studies on Rapid Thermal Equipment and Process (1/3),” May 2000, NSC89-2218-E-002-018
J.G.Hwu, “Repeated Pulse-Heating Process in Rapid Thermal System (1/3),” May 2000, NSC89-2218-E-002-016
J.G.Hwu, “A Study of the Automation of Rapid Thermal Process (III),” Sept. 1999, NSC88-2218-E-002-009
J.G.Hwu, “The Development of the IC Key Equipment (III),” Sept. 1999, NSC88-2218-E-002-014
J.G.Hwu, “A Study of the Effect of Rapid Thermal Oxidation Process on Oxide’s Thickness Uniformity and Electrical Property,” Aug. 1999, NSC88-2215-E-002-026
J.G.Hwu, “Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (2/3),” NSC94-2215-E-002-004