鐵電元件、電路與記憶體之分析與設計。
前瞻奈米電子元件之研究,如CFET、Nanosheet FET與FinFET等,並探討多種通道材料,包括高載子遷移率材料、氧化物半導體與二維材料等。
高效能與超低功耗靜態隨機存取記憶體(SRAM)之設計。
積層型三維積體電路(3D IC)與設計技術之共同最佳化 (DTCO)。
Analysis and Design of Ferroelectric-Based Devices, Circuits, and Memory.
Exploration of Emerging Nanoelectronic Devices, such as Complementary FET (CFET), nanosheet, and FinFET structures, with a focus on various channel materials like high-mobility semiconductors, oxide semiconductors, and 2D materials.
Design of High-Performance and Ultra-Low-Power Static Random Access Memory (SRAM).
Monolithic 3D IC and Design-Technology Co-Optimization.