(1) Ferroelectric FET and memory circuits for energy-efficient edge computing applications
- FeFET nonvolatile memory for in-memory computing and neuromorphic applications
(2) Analysis of Silicon, Ge, III-V, and 2D materials based nano-electronics, including the variability and reliability analysis of UTB FET, FinFET, nanowire/nanosheet FETs, TFET, and NCFET etc.
(3) Low power and high performance SRAM design
- Variability-tolerant and reliability-tolerant design
- Read-/write-assist circuits and sense amplifiers
(4) Monolithic 3D IC and system-technology co-optimization