F. Mo, J. Xiang, X. Mei, Y. Sawabe, T. Saraya, T. Hiramoto, C.-J. Su, V. P.-H. Hu, and M. Kobayashi, “Efficient Erase Operation by GIDL Current for 3D structure FeFET with Gate Stack Engineering and Compact Long-term Retention Model,” IEEE Journal of the Electron Devices Society, vol. 10, , pp. 115-122, Feb. 2022
C.-J. Liu, Y. Wan, L.-J. Li, C.-P. Lin, T.-H. Hou, Z.-Y. Huang, and V. P.-H. Hu, “Two-Dimensional Materials-Based Static Random-Access Memory,” Advanced Materials, 202107894, Dec. 2021
M. Gupta and V. P.-H. Hu, “Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors,” ECS J. Solid State Sci. Technol., Oct. 2021
M. Gupta and V. P.-H. Hu, “Sensitivity Analysis and Design of Negative Capacitance Junctionless Transistor for High Performance Applications,” IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 4136-4143, Aug. 2021
V. P.-H. Hu, C.-W. Su, Y.-W. Lee, T.-Y. Ho, C.-C. Cheng, T.-C. Chen, T. Y.-T. Hung, J.-F. Li, Y.-G. Chen, and L.-J. Li, “Energy-Efficient Monolithic 3-D SRAM Cell with BEOL MoS2 FETs for SoC Scaling,” IEEE Transactions on Electron Devices, vol. 67, no. 10, 4216-4221, Oct. 2020
V. P.-H. Hu, H.-H. Lin, Y.-K. Lin, and C. Hu, “Optimization of Negative-Capacitance Vertical-Tunnel FET (NCVT-FET),” IEEE Transactions on Electron Devices, 67, 2593-2599, Jun. 2020
M. Gupta and V. P.-H. Hu, “Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications,” IEEE Electron Device Letters, 41, 473-476, Mar. 2020
V. P.-H. Hu, P.-C. Chiu, and Y.-C. Lu, “Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs,” IEEE Journal of the Electron Devices Society, 7, 295-302, 2019
V. P.-H. Hu and C.-T. Wang, “Optimization of III–V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression,” Japanese Journal of Applied Physics, 57, 04FD18-undefined, Mar. 2018
V. P.-H. Hu and P.-C. Chiu, “Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs,” Japanese Journal of Applied Physics, 57, 04FD02-undefined, Feb. 2018
V. P.-H. Hu, “Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier,” IEEE Journal of the Electron Devices Society, 5, 107-111, Mar. 2017
C.-H. Yu, M.-L. Fan, K.-C. Yu, V. P.-H. Hu, Pin Su and C.-T. Chuang, “Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications,” IEEE Transactions on Electron Devices, 63, 625-630, Feb. 2016
V. P.-H. Hu, M.-L. Fan, P. Su and C.-T. Chuang, “Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist,” IEEE Transactions on Electron Devices, 62, 1710-1715, Jun. 2015
C.-W. Hsu, M.-L. Fan, V. P.-H. Hu, and Pin Su, “Investigation and Simulation of Work-Function Variation for III–V Broken-Gap Heterojunction Tunnel FET,” IEEE Journal of the Electron Devices Society, 3, 194-199, May 2015
Y.-N. Chen, C.-J. Chen, M.-L. Fan, V. P.-H. Hu, Pin Su and C.-T. Chuang, “Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits,” Journal of Low Power Electronics and Applications, 5, 101-115, May 2015
M.-L. Fan, V. P.-H. Hu, Y.-N. Chen, C.-W. Hsu, Pin Su and C.-T. Chuang, “Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET,” IEEE Transactions on Electron Devices, 62, 107-113, Jan. 2015
Y.-N. Chen, M.-L. Fan, V. P.-H. Hu, Pin Su and C.-T. Chuang, “Evaluation of Stability, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 4, 389-399, Dec. 2014
Y.-N. Chen, M.-L. Fan, V. P.-H. Hu, Pin Su and C.-T. Chuang, “Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices,” IEEE Transactions on Circuits and Systems I: Regular Papers, 61, 3339-3347, Dec. 2014
M.-L. Fan, V. P.-H. Hu, Y.-N. Chen, P. Su and C.-T. Chuang, “Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling,” IEEE Transactions on Electron Devices, 61, 3448-3455, Oct. 2014
M.-L. Fan, S.-Y. Yang, V. P.-H. Hu, Y.-N. Chen, P. Su and C.-T. Chuang, “Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits,” Microelectronics Reliability, 54, 698-711, Apr. 2014
V. P.-H. Hu, M.-L. Fan, P. Su and C.-T. Chuang, “Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET,” IEEE Transactions on Electron Devices, 60, 3596-3600, Oct. 2013
V. P.-H. Hu, M.-L. Fan, P. Su and C.-T. Chuang, “Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation,” IEEE Transactions on Nanotechnology, 12, 524-531, Jul. 2013
M.-L. Fan, V. P.-H. Hu, Y.-N. Chen, P. Su and C.-T. Chuang, “Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET,” IEEE Transactions on Electron Devices, 60, 2038-2044, Jun. 2013
Y.-N. Chen, M.-L. Fan, V. P.-H. Hu, P. Su and C.-T. Chuang, “Design and Analysis of Robust Tunneling FET SRAM,” IEEE Transactions on Electron Devices, 60, 1092-1098, Mar. 2013
V. P.-H. Hu, M.-L. Fan, P. Su and C.-T. Chuang, “Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells,” IEEE Transactions on Electron Devices, 60, 147-152, Jan. 2013
M.-L. Fan, V. P.-H. Hu, Y.-N. Chen, P. Su and C.-T. Chuang, “Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications,” IEEE Transactions on Circuits and Systems II: Express Briefs, 59, 878-882, Dec. 2012
M.-L. Fan, V. P.-H. Hu, Y.-N. Chen, P. Su and C.-T. Chuang, “Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits,” IEEE Transactions on Electron Devices, 59, 2227-2234, Aug. 2012
C.-H. Yu, Y.-S. Wu, V. P.-H. Hu, and P. Su, “Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs,” IEEE Transactions on Electron Devices, 59, 1851-1855, Jul. 2012
C.-Y. Hsieh, M.-L. Fan, V. P.-H. Hu, “Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20, 1201-1210, Jul. 2012
C.-H. Yu, Y.-S. Wu, V. P.-H. Hu, and P. Su, “Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs,” IEEE Transactions on Nanotechnology, 11, 287-291, Mar. 2012
V. P.-H. Hu, M.-L. Fan, P. Su and C.-T. Chuang, “Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking,” IEEE Electron Device Letters, 33, 197-199, Feb. 2012
V. P.-H. Hu, M.-L. Fan, P. Su and C.-T. Chuang, “Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 1, 335-342, Sept. 2011
V. P.-H. Hu, M.-L. Fan, C.-Y. Hsieh, P. Su and C.-T. Chuang, “FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics,” IEEE Transactions on Electron Devices, 58, 805-811, Mar. 2011
V. P.-H. Hu, Y.-S. Wu, and P. Su, “Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET,” IEEE Transactions on Nanotechnology, 10, 325-330, Mar. 2011
V. P.-H. Hu, Y.-S. Wu, M.-L. Fan, P. Su and C.-T. Chuang, “Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation,” IEEE Transactions on Electron Devices, 56, 2120-2127, Sept. 2009
Conference & proceeding papers:
V. P.-H. Hu, C.-J. Liu, H.-L. Chiang, J.-F. Wang, C.-C. Cheng, T.-C. Chen, and M.-F. Chang, “High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing,” IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2021
F. Mo, J. Xiang, X. Mei, Y. Sawabe, T. Saraya, T. Hiramoto, C.-J. Su, V. P.-H. Hu, and M. Kobayashi, “Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model,” Symposia on VLSI Technology & Circuits (VLSI), Kyoto, Japan, Jun. 2021
V. P.-H. Hu, Cheng-Wei Su, Chun-Chi Yu, Chang-Ju Liu, and Cheng-Yang Weng, “Monolithic 3D SRAM Cell with Stacked Two-Dimensional Materials Based FETs at 2nm Node,” IEEE International Symposium on Circuits and Systems (ISCAS), Daegu, Korea, May 2021
M. Gupta and V. P.-H. Hu, “Improved Switching Time in Negative Capacitance Junctionless Transistors,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2021
C. J. Su, M. K. Huang, K. S. Lee, V. P.-H. Hu et al., “3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T 1R Configuration Demonstrated on Full Wafer,” International Electron Devices Meeting (IEDM), Dec. 2020
M. Gupta and V. P.-H. Hu, “Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors,” International Electron Devices & Materials Symposium, Taoyuan, Taiwan, Oct. 2020
Y.-W. Lee and V. P.-H. Hu, “Improved Energy Efficiency for Ferroelectric FET Non-volatile Memory using Split-gate Design,” IEEE International Symposium on Circuits and Systems (ISCAS), Seville, Spain, May 2020
M. Gupta and V. P.-H. Hu, “Subthreshold Behavior of Ferroelectric Junctionless Transistor,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
V. P.-H. Hu, H.-H. Lin, Z.-A. Zheng, Z.-T. Lin, Y.-C. Lu, T.-Y. Ho, Y.-W. Lee, C.-W. Su, and C.-J. Su, “Split-Gate FeFET (SG-FeFET) with Dynamic Memory Window Modulation for Non-Volatile Memory and Neuromorphic Applications,” Symposia on VLSI Technology & Circuits (VLSI), Kyoto, Japan
V. P.-H. Hu, P.-C. Chiu, A. B. Sachid, and C. Hu, “Negative capacitance enables FinFET and FDSOI scaling to 2 nm node,” 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA
Z.-A. Zheng and V. P.-H. Hu, “Improved Read Stability and Writability of Negative Capacitance FinFET SRAM Cell for Subthreshold Operation,” 2019 IEEE International Symposium on Circuits and Systems (ISCAS), Sapporo, Japan
H.-H. Lin and V. P.-H. Hu, “Device Designs and Analog Performance Analysis for Negative-Capacitance Vertical-Tunnel FET,” 2019 20th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA
P.-C. Chiu and V. P.-H. Hu, “Analysis of Negative Capacitance UTB SOI MOSFETs considering Line-Edge Roughness and Work Function Variation,” 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kobe