劉致為特聘教授的個人資料 - Profile of Chee Wee Liu

劉致為 Chee Wee Liu

國立臺灣大學電機工程學系 特聘教授
Chee Wee Liu (劉致為)
Distinguished/ Micron and MXIC Chair (特聘/講座) Professor, IEEE Fellow
Department of Electrical Engineering (電機工程學系),
Graduate Institute of Electronics Engineering (電子工程學研究所),
Graduate Institute of Photonics and Optoelectronics Engineering (光電工程學研究所),
Center of Condensed Matter Sciences (凝態科學研究中心)
National Taiwan University,
No. 1, Sec. 4, Roosevelt Road, Taipei, Taiwan
cliu@ntu.edu.tw http://cc.ee.ntu.edu.tw/~cliu cell: 886910666032
Google Scholar Page (Citation: 9670/ H index: 45 / i10 index: 223)
International College of Semiconductor Technology (國際半導體產業學院),
National Yang Ming Chiao Tung University
College of Semiconductor Research (半導體研究學院), National Tsing Hua University
Graduate School of Advanced Technology (重點科技研究學院), National Taiwan University
Taiwan Semiconductor Research Institute (台灣半導體研究中心), NARlabs
Distinguished Professor, Department of Electrical Engineering, National Taiwan University
Distinguished/Chair Professor
Department of Electrical Engineering,
Graduate Institute of Electronics Engineering,
Graduate Institute of Photonics and Optoelectronics engineering,
Center of Condensed Matter Sciences
National Taiwan University,
No. 1, Sec. 4, Roosevelt Road, Taipei, Taiwan
cliu@ntu.edu.tw https://nanosioe.ee.ntu.edu.tw cell: 886910666032
‧Google Scholar Page (https://scholar.google.com.tw/citations?hl=zh-TW&user=EG_kp-UAAAAJ) Citation: 9670/ H index: 45 / i10 index: 223
Taiwan Semiconductor Research Institute, NARlabs
International College of Semiconductor Technology, National Yang Ming Chiao Tung University
College of Semiconductor Research, National Tsing Hua University
Graduate School of Advanced Technology, National Taiwan University

主要研究領域:

CVD磊晶為基礎，研發SiGe/GeSn 元件、stacked 3D電晶體、MTJ/DRAM記憶體、IGZO TFT、暨光電元件

Major Research Areas:

SiGe/GeSn epi/photonics, stacked 3D transistors, thermal simulation (physics-based and neural network-based), IGZO TFT, and solar cells

研究領域摘要:

Research Summary:

His research includes SiGe/GeSn epi/photonics, stacked 3D transistors for beyond 1 nm nodes, thermal analysis of 3DIC, IGZO TFT, SRAM/MIM/FTJ/FeFET/MTJ/SOT/DRAM, and CMOS image sensors/Si photonics. He demonstrates the tallest transistor (8/16/24 stacked channels), the record high 2,400,000 cm2/Vs electron mobility in strained Si, the first Si-capped SiGe/Ge channels with 3x mobility enhancement (in 5nm node production now), the first CVD GeSn outperforming MBE in terms of hole mobility, the first stacked GeSn/GeSi channel GAA(nanosheet/nanowire) transistors, first CFET (complementary FET) with junction isolation, and the first Si/SiGe/SiC MIS LED/photodetectors. He also invented the tree/E FETs, beyond Stacked GAA. He has 743+ papers (285+ journal papers, 35 IEDM, 19VLSI), 96 US patents, 20 China patents, 68 Taiwan ROC patents, more than 9627+ citations with h-index=45, 50 Ph.D. graduates, and 151 master graduates. His students received 230 Awards since 1999 including 12 TSIA PhD awards and 14 tsmc PhD awards (Link). He has 6 graduate students as professors (2 NTU, 1 NCHU, 1 NDHU, 1 NJUST, 1 FZU), and 3 postdocs as professors (1 NTU, 1 NCU, 1 CGU). Currently, he is advising 22 PhD students and 29 masters.

Photo of Chee Wee Liu

代表性著作 Selected Publication

  1. T.-H. Cheng, C. T. Lee, M. H. Liao, P. -S. Kuo, T. A. Hung, and C. W. Liu, “Electrically pumped Ge Laser at room temperature,” International Electron Devices Meeting (IEDM), Washington D.C., Dec. 2007
  2. M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2um emission from Si/Ge heterojunction LED and up to 1.55um detection by GOI detector with strain-enhanced features,” 51st International Electron Device Meeting (IEDM), Washington D.C., Dec. 2005
  3. S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, “Package-strain-enhanced device and circuit performance,” 50th International Electron Device Meeting (IEDM), Technical Digest, pp. 233-236, San Francisco, Dec. 2004
  4. M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs,” 49th International Electron Device Meeting (IEDM), Technical Digest, pp. 69-72, Washington D.C., Dec. 2003
  5. Z. Pei, C.S. Liang, L.S. Lai, Y.T. Tseng, Y.M. Hsu, P.S. Chen, S.C. Lu, C.M. Liu, M.-J. Tsai and C.W. Liu, “High Efficient 850nm and 1310nm Multiple Quantum Well SiGe/Si Heterojunction Phototransistors with 1.25 Plus GHz Bandwidth,” 48th International Electron Device Meeting (IEDM), Technical Digest, pp. 297-300, San Francisco, Dec. 2002
  6. B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, “High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short Reach Integrated Optical Receivers,” 48th International Electron Device Meeting (IEDM), Technical Digest, pp. 91-94, San Francisco, Dec. 2002