劉致為特聘教授的著作列表 - Publication List of Chee Wee Liu

Publication List of 劉致為 Chee Wee Liu

Journal articles & book chapters:

  1. Liu,Chou,Chou,Wu,Huang,Tu,Liu,Liu, “Comprehensive Strain Study of Monolithic Nanosheet CFETs,” IEEE Transactions on Electron Devices, 73, 4233-4240, Jul. 2026
  2. Chen,Chou,Yao,Huang,Lin,Chen,Chen,Liang,Liu, “Multi-Level GAA FeFET by Multi-Ferroelectric/Dielectric Gate Stacks,” IEEE Electron Device Letters, 47, 1097-1100, Jun. 2026
  3. Sung,Liu,Dobhal,Chiu,Ma,Jhu,Chen,Chou,Liu, “Stability and performance enhancement of a-IGZO TFTs by H incorporation,” Applied Physics Letters, 128, May 2026
  4. Chen,Liu, “Relative stabilities and physical parameters of rhombohedral distorted HfO 2 crystalline phases,” Journal of Physics D: Applied Physics, 59, 025117-undefined, Jan. 2026
  5. Melnikov,Smirnov,Shashkin,Huang,Liu,Kravchenko, “Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system,” Physical Review B, 112, Oct. 2025
  6. Liu,Chiu,Wu,Fan,Ma,Fujiwara,Lu,Liu, “Amorphous IGZO GAA Nanosheet FETs Using Typical Channel Release,” IEEE Transactions on Electron Devices, 72, 4998-5003, Sept. 2025
  7. Rachit Dobhal, Yuan-Ming Liu, Jih-Chao Chiu, Hsien-Ming Sung, Yu-Shan Wu, Yu-Cheng Fan, Johannes Gracia, Rong-Wei Ma, Hidenari Fujiwara, C. W. Liu, “Amorphous In2O3 FeFET-like Devices by Interface Dipoles,” Appl. Phys. Lett, Vol.126, Issue 11, 112102, Mar. 2025
  8. Tao Chou, Tzu-Yun Liu, Li-Kai Wang, Tsai-Yu Chung, Ching-Wang Yao, Hsin-Cheng Lin, and C. W. Liu, “SRAM with Oxide Semiconductor Pull-Down Transistors on the Backside Enabling Full-Node PPA Improvement,” IEEE Electron Device Letters, vol. 46, no. 1, 48-51, Jan. 2025
  9. Zefu Zhao, Yu-Tsung Liao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, Dai-Ying Lee, Ming-Hsiu Lee, and C. W. Liu, “C-axis Oriented HZO on Flat Amorphous TiN Achieving High uniformity, Breakdown Field, Final 2Pr, and Endurance,” IEEE Transactions on Electron Devices, vol. 72, no. 1, pp. 222-227, Jan. 2025
  10. M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S.-H. Huang ,C. W. Liu, and S. V. Kravchenko, “Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields,” Phys. Rev. B, vol. 111, no. 4, L041301, Jan. 2025
  11. M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures,” Appl. Phys. Lett., Vol. 125, pp. 153102, Oct. 2024
  12. Huang,Hsieh,Tu,Liu,Chen,Chen,Cheng,Chou,Liu, “Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies,” IEEE Electron Device Letters, 45, 956-959, Jun. 2024
  13. Wan-Hsuan Hsieh, Chien-Te Tu, Yu-Rui Chen, Bo-Wei Huang, Wei-Jen Chen, Yi-Chun Liu, Chun-Yi Cheng, Hung-Chun Chou, and C. W. Liu, “Monolithic 3D Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels,” IEEE Transactions on Electron Devices, Vol. 71, No. 5, pp. 3383-3389, May 2024
  14. Hung-Chun Chou, Tao Chou, Shee-Jier Chueh, Sun-Rong Jan, Bo-Wei Huang, Chien-Te Tu, Yi-Chun Liu, Li-Kai Wang, and C. W. Liu, “Strain Evolution in SiGe Nanosheet Transistor Process Flow,” IEEE Transactions on Electron Devices, vol. 71, no. 5, pp. 2907-2913, May 2024
  15. Ching-Wang Yao, Yu-Chieh Lee, Hsin-Cheng Lin, Tao Chou, Tsai-Yu Chung, Li-Kai Wang, Jen-Wei Yang, Sun-Rong Jan, and C. W. Liu, “Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects,” IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2271-2277, Apr. 2024
  16. Wan-Hsuan Hsieh, Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, M. H. Lee, and C. W. Liu, “Interfacial-layer-free Ge0.95Si0.05 Nanosheet FeFETs,” IEEE Transactions on Electron Devices, Vol. 71, No. 3, pp. 1758-1763, Mar. 2024
  17. Yuan-Ming Liu, Jih-Chao Chiu, Yu-Ciao Chen, Yu-Cheng Fan, Rong-Wei Ma, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation,” Semicond. Sci. Technol., Vol. 39, No. 5, Mar. 2024
  18. Asim Senapati, Zhao-Feng Lou, Jia-Yang Lee, Yi-Pin Chen, Shih-Yin Huang, Siddheswar Maikap, Min-Hung Lee, and Chee-Wee Liu, “Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2 by Optimizing TiNx Interfacial Capping Layer and Its Fatigue Mechanism,” IEEE Electron Device Letters, vol. 45, no. 4, pp. 673-67, 2024
  19. Lin,Hsu,Chung,Shen,Yao,Chou,Wang,Liu, “RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs,” IEEE Access, 12, 70512-70518, 2024
  20. Zhao,Chen,Chen,Liu, “Engineering Ferroelectric HZO With n+-Si/Ge Substrates Achieving High 2Pr =84 μC/cm2 and Endurance >1E11,” IEEE Access, 12, 71598-71605, 2024
  21. Tao Chou, Li-Kai Wang, Tsai-Yu Chung, Ching-Wang Yao, Hsin-Cheng Lin, and C. W. Liu, “3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling,” IEEE Electron Device Letters, vol. 44, no. 12, pp. 1975-1978, Dec. 2023
  22. Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Jer-Fu Wang, Yifan Xing, Wang Ji, Guan-Hua Chen, Jia-Yang Lee, Rachit Dobhal, and C. W. Liu, “Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions with Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low Operating Voltage,” IEEE Transactions on Electron Devices, vol. 70, no. 10, pp.5022-5027, Oct. 2023
  23. Yun-Wen Chen and C. W. Liu, “Effects of shear strain on HZO ferroelectric orthorhombic phases,” Appl. Phys. Lett., Vol. 123, no. 11, pp. 112901, Sept. 2023
  24. Jih-Chao Chiu, Yuan-Ming Liu, Eknath Sarkar, Yu-Ciao Chen, Yu-Cheng Fan, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Mobility Enhancement of BCE Type Amorphous InGaZnO TFTs Using Triple Layer Channels,” IEEE Transactions on Electron Devices, vol. 70, no. 8, pp. 4194-4197, Aug. 2023
  25. K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, Member, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee, “Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity CyclingRecovery (OPCR) for eDRAM,” IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2142-2146, Apr. 2023
  26. Wei-Jen Chen, Yi-Chun Liu, Yun-Wen Chen, Yu-Rui Chen, Hsin-Cheng Lin, Chien-Te Tu, Bo-Wei Huang, and C. W. Liu, “Extremely High- Hf0.2Zr0.8O2 Gate Stacks Integrated into 8 Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION,” IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6673-6679, 2023
  27. Yu-Rui Chen, Yi-Chun Liu, Hsin-Cheng Lin, Chien-Te Tu, Tao Chou, Bo-Wei Huang, Wan-Hsuan Hsieh, Shee-Jier Chueh, and C. W. Liu, “Fabrication and performance of highly stacked GeSi nanowire field effect transistors,” Communications Engineering, 2, 77, pp. 1-9, 2023
  28. M. Yu. Melnikov, A. A. Shakirov, A. A. Shashkin, S. H. Huang, C. W. Liu & S. V. Kravchenko, “Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system,” Scientific Reports, 13, 17364, pp. 1-6, 2023
  29. Guan-Hua Chen, Yu-Rui Chen, Zefu Zhao, Jia-Yang Lee, Yun-Wen Chen, Yifan Xing, Rachit Dobhal, and C. W. Liu, “A Kinetic Pathway to Orthorhombic Hf0.5Zr0.5O2,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 752-758, 2023
  30. Ya-Jui Tsou, Wei-Jen Chen, Chin-Yu Liu, Yi-Ju Chen, Kai-Shin Li, Jia-Min Shieh, Pang-Chun Liu, Wei-Yuan Chung, C. W. Liu, Ssu-Yen Huang, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun, “Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1661-1664, Oct. 2022
  31. Yifan Xing, Yu-Rui Chen, Jer-Fu Wang, Zefu Zhao, Yun-Wen Chen, Guan-Hua Chen, Yuxuan Lin, Rachit Dobhal, and C. W. Liu, “Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2,” IEEE Journal of the Electron Devices Society, vol. 10, pp. 996-1002, Oct. 2022
  32. Chia-Che Chung, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chia-Jung Tsen, and C. W. Liu, “Self-Heating of FinFET Circuitry Simulated by Multi-Correlated Recurrent Neural Networks,” IEEE Electron Device Letters, vol. 43, no. 8, pp. 1179-1182, Aug. 2022
  33. Chia-Jung Tsen, Chia-Che Chung, and C. W. Liu, “Self-Heating Mitigation of TreeFETs by Interbridges,” IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4123-4128, Aug. 2022
  34. Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, Wan-Hsuan Hsieh, Chung-En Tsai, Chien-Te Tu, Yi-Chun Liu, and C. W. Liu, “Multi-VT of Stacked GeSn Nanosheets by ALD WNxCy Work Function Metal,” IEEE Transactions on Electron Devices, Vol. 69, No. 7, pp. 3611-3616, Jul. 2022
  35. Hsin-Cheng Lin, Tao Chou, Kung-Ying Chiu, Sun-Rong Jan, Chia-Che Chung, Chia-Jung Tsen, and C. W. Liu, “RF Performance of Stacked Si Nanosheets/Nanowires, “RF Performance of Stacked Si Nanosheets/Nanowires,” IEEE Electron Device Letters, Vol. 43, No. 7, pp. 1017-1020, Jul. 2022
  36. Chien-Te Tu, Wan-Hsuan Hsieh, Bo-Wei Huang, Yu-Rui Chen, Yi-Chun Liu, Chung-En Tsai, Shee-Jier Chueh, and C. W. Liu, “Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching,” IEEE Electron Device Letters, Vol. 43, No. 5, pp. 682-685, May 2022
  37. Bo-Wei Huang, Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Wan-Hsuan Hsieh, Sun-Rong Jan, Yu-Rui Chen, Shee-Jier Chueh, Chun-Yi Cheng, and C. W. Liu, “Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching,” IEEE Transactions on Electron Devices, Vol. 69, No. 4, pp. 2130-2136, Apr. 2022
  38. Zefu Zhao, Yu-Rui Chen, Jer-Fu Wang, Yun-Wen Chen, Jia-Ren Zou, Yuxuan Lin, Yifan Xing, C. W. Liu, and Chenming Hu, “Engineering Hf0.5Zr0.5O2 Ferroelectric/Antiferroelectric Phases with Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants,” IEEE Electron Device Letter, Vol. 43, No. 4, pp. 553-556, Apr. 2022
  39. Yun-Wen Chen and C. W. Liu, “Boost of orthorhombic population with amorphous SiO2 interfacial layer – A DFT study,” Semicond. Sci. Technol., Vol. 37, No. 5, pp. 05LT01, Mar. 2022
  40. Ming-Xuan Lee, Jih-Chao Chiu, Song-Ling Li, Eknath Sarkar, Yu-Ciao Chen, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs,” IEEE Journal of the Electron Devices Society, Vol. 10, pp. 301-308, Mar. 2022
  41. Chun-Hung Yeh, Cheng-Tse Lee, Jih-Chao Chiu, Yi-Ting Wu, Chih-Ting Lin, Chwen Yu, Tzu-Sou Chuang, and C. W. Liu, “Electrical Measurements to Detect Liquid Concentration,” IEEE Transactions on Semiconductor Manufacturing,” Vol. 35, Issue. 1, pp. 11-15, Feb. 2022
  42. A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjic´, V. Dobrosavljevic´, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, “Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system,” Scientific Reports, Vol. 12, pp. 5080, 2022
  43. Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Bo-Wei Huang, Chun-Yi Cheng, Shee-Jier Chueh, Jyun-Yan Chen, and C. W. Liu, “Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching,” IEEE Transactions on Electron Devices, Vol. 68, No. 12, pp. 6599-6604, Dec. 2021
  44. Ya-Jui Tsou, Wei-Jen Chen, Huan-Chi Shih, Pang-Chun Liu, C. W. Liu, Kai-Shin Li, Jia-Min Shieh, Yu-Shen Yen, Chih-Huang Lai, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun, “Thermally-Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching,” IEEE Transactions on Electron Devices, Vol. 68, No. 12, pp. 6623-6628, Dec. 2021
  45. Jih-Chao Chiu, Song-Ling Li, Ming-Xuan Lee, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier,” IEEE Journal of the Electron Devices Society, Vol. 10, pp. 45-50, Nov. 2021
  46. D. Chen, S. Cai, N.-W. Hsu, S.-H. Huang, Y. Chuang, E. Nielsen, J.-Y. Li, C. W. Liu, T. M. Lu, and D. Laroche, “Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, Vol. 119, No. 22, pp. 223103, Nov. 2021
  47. Hsin-Cheng Lin, Tao Chou, Chia-Che Chung, Chia-Jung Tsen, Bo-Wei Huang, and C. W. Liu, “RF Performance of Stacked Si Nanosheet nFETs,” IEEE Transactions on Electron Devices, Vol. 68, No. 10, pp. 5277-5283, Oct. 2021
  48. Chia-Che Chung, Hsin-Cheng Lin, Bo-Wei Huang, Chia-Jung Tsen, and C. W. Liu, “Architecture and Optimization of 2T (Footprint) SRAM,” IEEE Transactions on Electron Devices, Vol. 68, No. 10, pp. 4918-4924, Oct. 2021
  49. Kuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, Shih-Hung Chiang, C. W. Liu, Tuo-Hung Hou, and Min-Hung Lee, “Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes,” Nanomaterials, Vol. 11, No. 10, pp. 2685, Oct. 2021
  50. Kuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, Shih-Hung Chiang, C. W. Liu, Tuo-Hung Hou, and Min-Hung Lee, “Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes,” Nanomaterials, Vol. 11, No. 10, pp. 2685, Oct. 2021
  51. Chien-Te Tu, Yu-Shiang Huang, Chun-Yi Cheng, Chung-En Tsai, Jyun-Yan Chen, Hung-Yu Ye, Fang-Liang Lu, and C. W. Liu, “Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch,” IEEE Transactions on Electron Devices, Vol. 68, No. 4, pp. 2071-2076, Apr. 2021
  52. V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system,” Phys. Rev. B, Vol. 103, No. 16, pp. 161302, Apr. 2021
  53. K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, J.-F. Wang, S.-H. Chiang, S.-H. Chang, F.-C. Hsieh; H. Liang, C.-Y. Lin, Z.-F. Lou, T.-H. Hou, C. W. Liu and M. H. Lee, “Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory,” IEEE Electron Device Letter, Vol. 42, No. 10, pp. 1464-1467, 2021
  54. Yun-Wen Chen, Sheng-Ting Fan, and C. W. Liu, “Energy preference of uniform polarization switching for HfO2 by first-principle study,” J. Phys. D: Appl. Phys., 54 (2021) 085304 (7pp), Dec. 2020
  55. Chung-En Tsai, Fang-Liang Lu, Yi-Chun Liu, Hung-Yu Ye, and C. W. Liu, “Low Contact Resistivity to Ge Using In-situ B and Sn Incorporation by Chemical Vapor Deposition,” IEEE Transactions on Electron Devices, Vol. 67, No. 11, pp. 5053-5058, Nov. 2020
  56. Shih-Ya Lin, Hsiao-Hsuan Liu, Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, and C. W. Liu, “Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs,” IEEE Transactions on Electron Devices, Vol. 67, No. 10, pp. 4073-4078, Oct. 2020
  57. Hung-Yu Ye and C. W. Liu, “On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges,” IEEE Electron Device Letters, vol. 41, no. 9, pp. 1292-1295, Sept. 2020
  58. A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko, “Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells,” Phys. Rev. B, Rapid Communication, Vol. 102, No. 8, pp. 081119, Aug. 2020
  59. Chia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Oxygen-related Reliability of Amorphous InGaZnO Thin Film Transistors,” IEEE Journal of the Electron Devices Society, Vol. 8, pp. 540-544, May 2020
  60. Sheng-Ting Fan, Yun-Wen Chen, and C. W. Liu, “Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations,” Journal of Physics D: Applied Physics, Vol. 53, No. 23, Apr. 2020
  61. Yi-Chun Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, Chien-Te Tu, and C. W. Liu, “Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced Ion (1.7X at VOV = VDS = 0.5 V) by Ge0.85Si0.15 channels,” Semicond. Sci. Technol., Vol. 35, No. 5, pp. 055010, Mar. 2020
  62. Xiaoxue Liu, Tzu-Ming Lu, Charles Thomas Harris, Fang-Liang Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu and Rui-Rui Du, “Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure,” Phys. Rev. B, Vol. 101, No. 7, pp. 075304, Feb. 2020
  63. M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, “Metallic state in a strongly interacting spinless two-valley electron system in two dimensions,” Phys. Rev. B, Vol. 101, No. 4, pp. 045302, Jan. 2020
  64. Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu, “Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors,” IEEE Electron Device Letters, vol. 41, no. 1, pp. 147-150, Jan. 2020
  65. Chia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs,” IEEE Electron Device Letters, vol. 40, no. 12, pp. 1913-1916, Dec. 2019
  66. Ya-Jui Tsou, Jih-Chao Chiu, Huan-Chi Shih, and C. W. Liu, “Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Nov. 2019
  67. Emmanuele Galluccio, Nikolay Petkov, Gioele Mirabelli, Jessica Doherty, Shih-Ya Lin, Fang-Liang Lu, C. W. Liu, Justin D. Holmes, and Ray Duffy, “Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08,” Thin Solid Films, Vol. 690, 137568, Nov. 2019
  68. An-Hung Tai, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures,” IEEE Transactions on Electron Devices, Vol. 66, No. 10, pp. 4188-4192, Oct. 2019
  69. Chih-Hsiung Huang, Chung-En Tsai, Yu-Rui Chen, and C. W. Liu, “Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride,” IEEE Electron Device Letters, Vol. 40, No. 8, pp.1237-1240, Aug. 2019
  70. C.-C. Chung, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance,” IEEE Transactions on Electron Devices, Vol. 66, No. 6, pp. 2710-2714, Jun. 2019
  71. M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, and C. W. Liu, “Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system,” Phys. Rev. B, Vol. 99, No. 8, 081106(R), Feb. 2019
  72. Pin-Shiang Chen and C. W. Liu, “Theoretical Calculation of Ferroelectric Hf1-xZrxO2 by First-Principle Molecular Dynamic Simulation,” Mater. Res., Express 6, 095045, 2019
  73. Hung-Yu Ye, Chia-Che Chung and C. W. Liu, “Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence,” IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5295-5300, Dec. 2018
  74. Yu-Shiang Huang, Fang-Liang Lu , Ya-Jui Tsou, Hung-Yu Ye, Shih-Ya Lin, Wen-Hung Huang, and C. W. Liu, “Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process,” IEEE Electron Device Letters, Vol. 39, No. 9, pp.1274-1277, Sept. 2018
  75. Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu, “Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well,” Opt. Mater. Express, 8, 2795-2802, Sept. 2018
  76. Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition,” Thin Solid Films, Vol. 660, pp. 263-266, Aug. 2018
  77. E. Bussmann, John King Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T.-M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials, 2, 066004, Jun. 2018
  78. V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields,” JETP Letters, Vol. 107, No. 12, pp. 794-797, Jun. 2018
  79. Fang-Liang Lu, Chung-En Tsai, I-Hsieh Wong, Chun-Ti Lu, and C. W. Liu, “Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications,” IEEE Transactions on Electron Devices, Vol. 65, No. 7, pp. 2925-2931, May 2018
  80. M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/ SiGe quantum wells,” Journal of Applied Physics, 122, 224301, Dec. 2017
  81. M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Indication of band flattening at the Fermi level in a strongly correlated electron system,” Scientific Reports, 7, 14539, Nov. 2017
  82. T. M. Lu, C. T. Harris, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Appl. Phys. Lett., Vol. 111, 102108, Sept. 2017
  83. Chun-Ti Lu, Fang-Liang Lu, Chung-En Tsai, Wen-Hung Huang, and C. W. Liu, “Process simulation of pulsed laser annealing on epitaxial Ge on Si,” ECS J. Solid State Sci. Tech., Vol. 6, pp. 495-498, Jun. 2017
  84. H.-S. Lan, S. T. Chang, and C. W. Liu, “Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys,” Phys. Rev. B, Rapid Communication, 95, 201201(R), May 2017
  85. Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness,” IEEE Trans. on Electron Devices, Vol. 64, No. 6, pp.2498-2504, May 2017
  86. T. M. Lu, L. A. Tracy, D. Laroche, S.-H. Huang, Y. Chuang, Y.-H. Su, J.-Y. Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports, 7, 2468, May 2017
  87. Chih-Hsiung Huang, Yu-Shiang Huang, Da-Zhi Chang, Tzo-Tao Lin, and C. W. Liu, “Interface trap density reduction due to AlGeO interfacial layer formation by Al capping on Al2O3/GeOx/Ge stack,” IEEE Transactions on Electron Devices, Vol. 64, No. 4, pp. 1412-1417, Apr. 2017
  88. H.-S. Lan and C. W. Liu, “Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces,” J. Phys. D: Appl. Phys., 50, 13LT02, Feb. 2017
  89. Pin-Shiang Chen, Sheng-Ting Fan, Huang-Siang Lan, C. W. Liu, “Band calculation of lonsdaleite Ge,” J. Phys. D: Appl. Phys., 50, 015107, 2017
  90. Hung-Yu Ye, Huang-Siang Lan, and C. W. Liu, “Electron Mobility in Junctionless Ge Nanowire NFETs,” IEEE Transactions on Electron Devices, Vol. 63, No.11, pp.4191, Oct. 2016
  91. S.-T. Fan, J.-Y. Yan, D.-C. Lai, C. W. Liu, “The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance,” Solid-State Electronics, Volume 122, Pages 13-17, Aug. 2016
  92. Chung-Yi Lin, Chih-Hsiung Huang, Shih-Hsien Huang, Chih-Chiang Chang, C. W. Liu, Yi-Chiau Huan , Hua Chung, Chorng-Ping Chang, “Photoluminescence and electroluminescence from Ge⁄strained GeSn⁄Ge quantum wells,” Appl. Phys. Lett., Vol. 109, 091103, Aug. 2016
  93. X. Zhu, T.-H. Cheng, and C. W. Liu, “Ga Content and Thickness Inhomogeneity Effects on Cu(In, Ga)Se2 Solar Modules,” Electronic Materials Letters, Vol. 12, No. 4, pp 506–511, Jul. 2016
  94. D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu and T. M. Lu, “Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Appl. Phys. Lett., Vol. 108, 233504, Jun. 2016
  95. Chieh Lo, Zheng-Lun Feng, Wei-Lun Huang, C. W. Liu, T. -L. Chen, and C. H. Chou, “Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-film Transistors due to Mobile Sodium,” IEEE J. of Electron Devices Society, Vol. 4, No. 5,, pp. 353-357, May 2016
  96. Chun-Ti Lu, Yu-Shiang Huang and C. W. Liu, “Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance,” J. Phys. D: Appl. Phys., 49, 245105, May 2016
  97. Shi Luo, Carissa Eisler, Tsun-Hsin Wong, Hai Xiao, Chuan-En Lin, Tsung-Ta Wu, Chang-Hong Shen, Jia-Min Shieh, Chuang-Chuang Tsai, C. W. Liu, Harry A. Atwater, William A. Goddard III, Jiun-Haw Lee, Julia R. Greer, “Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation,” Acta Materialia, Volume 106, Pages 171–181, Mar. 2016
  98. T. M. Lu, D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports, 6, 20967, Feb. 2016
  99. M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well,” Appl. Phys. Lett., Vol. 106, 092102, 2015
  100. D. Laroche, S.-H. Huang, E. Nielsen, C. W. Liu, J.-Y. Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Appl. Phys. Lett., Vol. 106, 143503, 2015
  101. I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen and C. W. Liu, “Junctionless Gate-all-around PFETs using in-situ Boron Doped Ge channel on Si,” IEEE Transaction on Nanotechnology, Vol. 14, No. 5, pp. 878-882, 2015
  102. Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang and C. W. Liu, “Asymmetric Keep-out Zone of Through-Silicon Via using 28nm Technology Node,” IEEE Electron Device Letter, Vol. 36, No. 9, pp. 938-940, 2015
  103. Sun-Rong Jan, Tien-Pei Chou, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov, ““Comments and Corrections Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”,” IEEE Transactions on Electron Devices, Vol. 62, No. 9, pp. 3106, 2015
  104. D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” AIP Advances, 5, 107106, 2015
  105. S.-H. Huang, F.-L. Lu, W.-L. Huang, C.-H. Huang, and C. W. Liu, “The ∼3×1020 cm−3 electron concentration and low specific contact resistivity of phosphorus-doped Ge on Si by in-situ chemical vapor deposition doping and laser annealing,” IEEE Electron Device Letter, Vol. 36, No. 11, pp. 1114-1117, 2015
  106. Yen-Yu Chen, C.-C. Yen, T.-Y. Chang, C. W. Liu, “Enhance light emission from Ge by GeO2 micro hemispheres,” Solid-State Electronics, Volume 110, Pages 83-85, 2015
  107. Hung-Chih Chang, Cheng-Ming Lin, Chih-Hsiung Huang, and C. W. Liu, “Hysteresis Reduction by Fluorine Incorporation into High Permittivity Tetragonal ZrO2 on Ge,” Appl. Phys. Lett, Vol. 104, 032902, 2014
  108. H. -S. Lan and C. W. Liu, “Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors,” Appl. Phys. Lett., Vol. 104, 192101, 2014
  109. I-Hsieh Wong, Yen-Ting Chen, Jhih-Yang Yan, Huang-Jhih Ciou, Yu-Sheng Chen and C. W. Liu, “Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs,” IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 2215, 2014
  110. Wen-Hsien Tu, Shu-Han Hsu, and C. W. Liu, “The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping” IEEE Trans. Electron Device,” IEEE Trans. Electron Device, Vol. 61, No. 7, pp. 2595-2598, 2014
  111. M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S.-H. Huang, C. W. Liu, “Effective Electron Mass in High_Mobility SiGe/Si/SiGe Quantum Wells,” JETP Letters, Vol. 100, No. 2, pp. 114-119, 2014
  112. Shi Luo, Jiun-Haw Lee, C. W. Liu, Jia-Min Shieh, Chang-Hong Shen, Tsung-Ta Wu ,D. Jang and Julia R. Greer, “Strength, stiffness,and microstructure of Cu(In,Ga)Se2 thin films deposited viasputtering and co-evaporation,” Appl. Phys. Lett., Vol. 105, 011907, 2014
  113. C.W. Liu, M. Östling, and J.B. Hannon, “New Materials for Post-Si Computing,” MRS Bulletin, Vol. 39, No. 8, pp. 658-662, 2014
  114. Xiaobo Zhu and C. W. Liu, “Fabrication and characterization of Cu(In,Ga)Se2 p-channel thin film transistors,” Appl. Phys. Lett., Vol. 105, 143502, 2014
  115. Tsang-Long Chen, Kuan-Chang Huang, Hsuan-Yi. Lin, C. H. Chou, H. H. Lin, and C. W. Liu, “Enhanced Current Drive of Double Gate α-IGZO Thin Film Transistors,” IEEE Electron Device Letters, Vol. 34, NO. 3, pp. 417-419, 2013
  116. Yen-Yu Chen, H.-C. Chang, Y.-H. Chi, C.-H. Huang, and C. W. Liu, “GeO2 passivation for low surface recombination velocity on Ge surface,” IEEE Electron Device Letters, Vol. 34, NO. 3, pp. 444-446, 2013
  117. Y. -T. Chen, H. -C. Chang, I. -H. Wong, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, and C. W. Liu, “Radiation Impact of EUV on High Performance Ge MOSFETs,” IEEE Electron Device Letters, vol. 34, no. 10, pp. 1220–1222, 2013
  118. Hsin-Ping Wang , Tzu-Yin Lin , Chia-Wei Hsu ,Meng-Lin Tsai , Chih-Hsiung Huang , Wan-Rou Wei ,Ming-Yi Huang , Yi-Jiunn Chien , Po-Chuan Yang , C. W. Liu , Li-Jen Chou , and Jr-Hau He, “Realizing High-Efficiency Omnidirectional N-Type Si Solar Cells Via The Hierarchical Architecture Concept With Radial Junctions,” ACS Nano, 7 (10), pp. 9325–9335, 2013
  119. Wan-Rou Wei , Meng-Lin Tsai , Shu-Te Ho , Shih-Hsiang Tai , Cherng-Rong Ho , Shin-Hung Tsai , C. W. Liu, Ren-Jei Chung , and Jr-Hau He, “Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon Trapping Structures,” Nano Letters, 13 (8), pp. 3658–3663, 2013
  120. Wei Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Ling-Yun Jang and C. W. Liu, “3C-, 4H- and 6H-SiC bulks studied by Si K-edge X-ray absorption,” Mat. Sci. Forum, 740-2, 573-576, 2013
  121. Cheng-Ming Lin, Hung-Chih Chang, I-Hsieh Wong, Shih-Jan Luo, C. W. Liu, and Chenming Hu, “Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness,” Appl. Phys. Lett., Vol. 102, 232906, 2013
  122. Ming-Heng Tsai, Sun-Rong Jan, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov, “Modeling and Optimization of Edge Dislocation Stressors,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 948–950, 2013
  123. C.W. Liu, T.-H. Cheng, Y.-Y. Chen, S.-R. Jan, C.-Y. Chen , S.T. Chan, Y.-H. Nien, Y. Yamamoto, and B. Tillack, “Direct and indirect radiative recombination from Ge,” Thin Solid Films, Vol. 520, pp. 3249–3254, 2012
  124. K.-M. Chen, G.-W. Huang, B.-Y. Chen, C.-S. Chiu, C.-H. Hsiao, W.-S. Liao, M.-Y. Chen, Y.-C. Yang, K.-L. Wang, and C. W. Liu, “LDMOS Transistor High-Frequency Performance Enhancements by Strain,” IEEE Electron Device Letters, Vol. 33, No. 4, pp. 471-473, 2012
  125. W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu, “Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3,” Appl. Phys. Lett., Vol. 100, 023508, 2012
  126. S.-R. Jan, T.-P. Chou, C.-Y. Yeh, C. W. Liu, R. V. Goldstein, V. A. Gorodtsov, and P. S. Shushpannikov, “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias,” IEEE Transactions on Electron Devices, Vol. 59, NO. 3, pp. 777-782, 2012
  127. T.M. Lu, W. Pan, D.C. Tsui, C.-H. Lee, and C.W. Liu, “The fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors,” Physical Review B, Vol. 85, pp. 121307(R), 2012
  128. W.-H Tu, S.-H. Huang, and C.W. Liu, “Ge out diffusion effect on SiGe nanoring formation,” J. Appl. Phys, Vol. 111, 076103, 2012
  129. H.-C. Chang, S. -C. Lu, T.-P. Chou, C.-M. Lin, and C. W. Liu, “First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO2 interface,” J. Appl. Phy.s, Vol. 111, 076105, 2012
  130. S. -H. Huang, T. -M. Lu, S. -C. Lu, C. -H. Lee, C. W. Liu, and D. C. Tsui, “Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures,” Appl. Phys. Lett., Vol. 101, 042111, 2012
  131. H.-C. Sun, Y.-J. Yang, J. Y. Chen, and T.-M. Chao, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “Enhanced recovery of light-induced degradation on the micromorph solar cells by electric field,” J. Appl. Phy.s, Vol. 112, 056104, 2012
  132. W.-H. Tu, C.-H. Lee, H. T. Chang, B.-H. Lin, C.-H. Hsu, S. W. Lee, and C. W. Liu, “A transition of three to two dimensional Si growth on Ge (100) substrate,” J. Appl. Phy.s, Vol. 112, 126101, 2012
  133. C.-M. Lin, Y.-T. Chen, C.-H. Lee, H.-C. Chang, W.-C. Chang, H.-L. Chang, and C. W. Liu, “Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment,” Journal of The Electrochemical Society, Vol. 158, No. 2, H128, 2011
  134. H. -S. Lan, S. -T. Chan and T. -H. Cheng, C. -Y. Chen and S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge substrates,” Appl. Phys. Lett., Vol. 98, 101106, 2011
  135. S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge,” Appl. Phys. Lett., Vol. 98, 141105, 2011
  136. S.-H. Tang, E. Y. Chang, M. Hudait, J.-S. Maa, C. W. Liu, G.-L.Luo, H.-D. Trinh, and Y.-H. Su, “High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate,” Appl. Phys. Lett., Vol. 98, 161905, 2011
  137. Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, “Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates,” Appl. Phys. Lett., Vol. 99, 022106, 2011
  138. Y.-Y. Chen, J. Y. Chen, R.-J. Hsu, W. S. Ho, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation,” Journal of The Electrochemical Society, Vol. 158, No. 9, pp. H912-H914, 2011
  139. W. S. Ho, Y. Deng, Y.-Y. Chen, T.-H. Cheng, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface,” Thin Solid Films, Vol. 520, pp. 448-451, 2011
  140. H. -S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., Vol. 99, 112109, 2011
  141. T.M. Lu, C.-H. Lee, S.-H. Huang, D.C. Tsui, and C.W. Liu, “Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors,” Appl. Phys. Lett., Vol. 99, 153510, 2011
  142. W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu, “Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010
  143. T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu*, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010
  144. T. M. Lu*, C. -H. Lee, D. C. Tsui, and C. W. Liu, “Integration of complementary circuit and two-dimensional electron gas in a Si/SiGe heterostructure,” Appl. Phys. Lett., Vol. 96, 253103, 2010
  145. C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, S237-S240, 2010
  146. S. W. Lee, H. T. Chang, C. -H. Lee, S. L. Cheng and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Films, Vol. 518, pp. S196, 2010
  147. T. -H. Cheng, C. -Y. Ko, C. -Y. Chen, K. -L. Peng, G. -L. Luo, C. W. Liu, and H. -H. Tseng, “Competitiveness between direct and indirect radiative transitions of Ge,” Appl. Phys. Lett., Vol. 96, 091105, 2010
  148. C. -H. Lee, C. W. Liu, H. -T. Chang, and S. W. Lee, “Hexagonal SiGe Quantum Dots and Nanorings on Si(110),” J. Appl. Phys., Vol. 107, 056103, 2010
  149. Yen-Ting Chen, Hung-Chang Sun, Ching-Fang Huang, Ting-Yun Wu, C. W. Liu, Yuan-Jun Hsu, and Jim-Shone Chen, “Capacitorless 1T Memory Cells Using Channel Traps at grain boundaries,” IEEE Electron Device Letters, Vol. 31, No. 10,, pp. 1125, 2010
  150. Wen-Wei Hsu, Chao-Yun Lai, C. W. Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, and Clement H. Wann, “Insulating Halos to Boost Planar NMOSFET Performance,” IEEE Electron Device Letters, Vol. 57, No. 10, pp. 2526, 2010
  151. H.-C. Sun, C.-F. Huang, Y.-T. Chen, T.-Y. Wu, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors,” IEEE Transactions on Electron Devices, Vol. 57, No. 11, pp. 3186, 2010
  152. C.-H. Lin and C. W. Liu, “Metal-Insulator-Semiconductor Photodetectors,” sensors, Vol. 10, No.10, pp. 8797-8826, 2010
  153. W.-L. Hsu, C.-T. Lin, T.-H. Cheng, S.-C. Yen, C. W. Liu, D.-P. Tsai, and G.-R. Lin, “Annealing induced ref inement on optical transmission and electrical resistivity of indium tin oxide,” Chinese Optics Letters, Vol. 7, No. 3, March 10, Mar. 2009
  154. T. M. Lu, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009
  155. S. W. Lee, C. -H. Lee, H. T. Chang, S. L. Cheng and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” Thin Solid Film, Vol. 517, 5029, 2009
  156. W. -L. Hsu, Y. -H. Pai, F. -S. Meng, C. W. Liu, and G. -R. Lin, “Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film,” Appl. Phys. Lett., Vol. 93(23), 231906 - 231906-3, 2009
  157. C.-Y. Peng, Y.-C. Fu, C.-F. Huang, Y.-J. Yang, S.-T. Chang, and C.W. Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal–Oxide–Silicon Capacitors,” IEEE Trans. on Electron Devices, Vol. 56, No. 8, pp. 1736-1745, 2009
  158. W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009
  159. T. M. Lu, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009
  160. C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys., Vol. 105, 083537, 2009
  161. P.-S. Kuo, C.-Y. Peng, C.-H. Lee, Y.-Y. Shen, H.-C. Chang, and C. W. Liu, “Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes,” J. Appl. Phys., Vol. 105, 106107, 2009
  162. C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009
  163. C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett., Vol. 94, 141909, 2009
  164. C.-F. Huang, H.-C. Sun, Y.-J. Yang, C.-Y. Peng, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Dynamic bias instability on p-channel polycrystalline silicon thin-film transistors induced by impact ionization,” IEEE Elec. Dev. Lett., Vol. 30, No. 4, pp. 368-370, 2009
  165. W. S. Ho, C.-H. Lin, T.-H. Cheng, W. W. Hsu, Y. -Y. Chen, P. -S. Kuo, and C. W. Liu, “Narrow-Band Metal-Oxide-Semiconductor Photodetectors,” Appl. Phys. Lett., Vol. 94, 061114, 2009
  166. H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, and C. W. Liu, “Reduction of crosstalk between dual power amplifiers using laser treatment,” IEEE Microwave. Wireless Compon. Lett., Vol. 18, No. 9, pp. 602-604, Sept. 2008
  167. W.-S. Liao, S.-Y. Huang, M.-C. Tang, Y.-G Liaw, K.-M. Chen, Tommy Shih, H.-C. Tsen, L. Chung, and C. W. Liu, “Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining,” Jpn J. Appl. Phys., L3127-3129, Apr. 2008
  168. W.-S. Liao, Y.-G. Liaw, M.-C. Chyuan, K.-M. Chen, S.-Y. Huang, C.-Y. Peng, and C. W. Liu, “PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and High-compressive ILD-SiNx Stressing Layer,” IEEE Electron Device Letters, Vol. 29, No. 1, pp. 86-88, 2008
  169. A. A. Abramov, C.-H. Lin, and C.W. Liu, “Fano interference in the Quantum Well–quantum dot system,” International Journal of Nanoscience, Vol. 7, Nos. 4&5, pp. 181–186, 2008
  170. S.-R. Jan, T.-H. Cheng, T.-A. Hung, P.-S. Kuo, M. H. Liao, Y. Deng, and C. W. Liu, “Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes,” IEEE Trans. on Electron Devices, Vol. 55, No. 12, pp. 3590-3593, 2008
  171. C.-F. Huang, C.-Y. Peng, Y.-J. Yang, H.-C. Sun, H.-C. Chang, P.-S. Kuo, H.-L. Chang, C.-Z. Liu, and C. W. Liu, “Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors,” IEEE Electron Device Letters, Vol. 29, No. 12, pp. 1332-1335, 2008
  172. C.-H. Lin, C.-Y. Yu, C.-C. Chang, C.-H. Lee, Y.-J. Yang, W. S. Ho, Y.-Y. Chen, M. H. Liao, C.-T. Cho, C.-Y. Peng, and C. W. Liu, “SiGe/Si Quantum-Dot Infrared Photodetectors With  doping,” IEEE Trans. Nanotech., Vol. 7, No. 5, pp. 558-564, 2008
  173. W.-S. Liao, Y.-G. Liaw, M.-C. Tang, S. Chakraborty, and C. W. Liu, “Investigation of Reliability Characteristics in NMOS and PMOS FinFETs,” IEEE Electron Device Letters, Vol. 29, No. 7, pp. 788-790, 2008
  174. C.-H. Lee, C.-Y. Yu, C. M. Lin, C. W. Liu, H. Lin, and W.-H. Chang, “Carrier gas effects on the SiGe quantum dots formation,” Applied Surface Science, Vol. 254, No. 19, pp. 6257–6260, 2008
  175. S. W. Lee, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition,” Applied Surface Science, Vol. 254, No. 19, pp. 6261-6264, 2008
  176. P. S. Chen, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing,” Applied Surface Science, Vol. 254, No. 19, pp. 6076-6080, 2008
  177. M. H. Liao, Lingyen Yeh, T.-L. Lee, C. W. Liu and M.-S. Liang, “Superior n-MOSFET performance by optimal stress design,” IEEE Electron Device Letters, 29(4), pp. 402-404, 2008
  178. T.-H. Cheng, M. H. Liao, Lingyen Yeh, T.-L. Lee, M.-S. Liang, and C. W. Liu, “Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors,” J. Appl. Phys., Vol. 103, 016103, 2008
  179. W.-C. Hua, H.-L. Chang, T. Wang, C.-Y. Lin, C.-P. Lin, S. S. Lu, C. C. Meng, and C. W. Liu, “Performance Enhancement of the nMOSFET Low Noise Amplifier by Package Strain,” IEEE Trans. on Electron Devices, Vol. 54, No. 1, pp. 160-162, 2007
  180. C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, S. T. Chang, P.-S. Kuo, and C. W. Liu, “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si,” Appl. Phys. Lett., Vol. 90, 012114, 2007
  181. C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W.-S. Ho and C. W. Liu, “Broadband SiGe/Si quantum dot infrared photodetector,” J. Appl. Phys., Vol. 101, No. 3, 033117, 2007
  182. T.-C. Chen, C.-Y. Peng, M. H. Liao, C.-H. Tseng, P.-S. Chen, M.-Y. Chern, and C. W. Liu, “Characterization of the ultra-thin HfO2 and Hf-silicate grown by atomic layer deposition,” IEEE Trans. on Electron Devices, Vol. 54, pp. 759-776, 2007
  183. C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. Liu, “Ge-on-glass Detectors,” Appl. Phys. Lett., Vol. 91, 041105, 2007
  184. P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Transport mechanism of SiGe dot MOS tunneling diodes,” IEEE Electron Device Letters, Vol. 28, No. 7, pp. 596-598, 2007
  185. M. H. Liao, C.-H. Lee, T.-A. Hung, and C. W. Liu, “The intermixing and strain effects on electroluminescence of SiGe dots,” J. Appl. Phys., Vol. 102, 053520, 2007
  186. Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Appl. Phys. Lett., Vol. 91, 102103, 2007
  187. S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced COMS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology,” IEEE Electron Device Letter, Vol. 27, No. 1, pp. 46-48, 2006
  188. J.-Y. Wei, S. Maikap, M. H. Lee, C. C. Lee, and C. W. Liu, “Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices,” Solid State Electronics, Vol. 50, pp. 109-113, 2006
  189. P. S. Chen, S. W. Lee, M. H. Lee and C. W. Liu, “Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs,” Semicond. Sci. Technol, Vol. 21, pp. 479-485, 2006
  190. C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Kuo, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” Thin Solid Films, Vol. 508, pp. 389-392, 2006
  191. F. Yuan, C.-F. Huang, M.-H. Yu, and C. W. Liu, “erformance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain,” IEEE Trans. on Electron Devices, Vol. 53, No. 4, pp. 724-729, 2006
  192. M. H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” IEEE Electron Device Letter, Vol. 27, No.4, pp. 252-254, 2006
  193. M. H. Liao, P.-S. Kuo, S.-R. Jan, S.-T. Chang, C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” Appl. Phys. Lett., Vol. 88, 143509, 2006
  194. J.-W. Shi, P.-H. Chiu, F.-H. Huang, and Y.-S. Wu, Ja-Yu Lu, C.-K. Sun, and C.-W. Liu, P.-S. Chen, “Si/SiGe-Based Edge-Coupled Photodiode with Partially P-Doped Photo-absorption Layer for High Responsivity and High-Power Performance,” Appl. Phys. Lett., Vol. 88, 193506, 2006
  195. S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 120-123, 2006
  196. S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen, P. S. Chen, L. J. Chou, and C. W. Liu, “Field emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 218-221, 2006
  197. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” Jpn. J. Appl. Phys., Part1 Lett., Vol. 45, No. 5A, pp. 4006-4008, 2006
  198. C.-F. Huang, Y.-J. Yang, C.-Y. Peng, F. Yuan, and C. W. Liu, “Mechanical Strain Effect of N-channel Poly-Si Thin-Film Transistors,” Appl. Phys. Lett., Vol. 89, 103502, 2006
  199. C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu, “Low-Temperature Fabrication and characterization of Ge-on-Insulator structures,” Appl. Phys. Lett., Vol. 89, 101913, 2006
  200. C.-Y. Yu, C.-J. Lee, C.-Y. Lee, J.-T. Lee, M. H. Liao, and C. W. Liu, “The Buckling Characteristics of SiGe Layers on Viscous Oxide,” J. of Appl. Phys., Vol. 100, 063510, 2006
  201. M. H. Liao, T.-H. Cheng, and C. W. Liu, “Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes,” Appl. Phys. Lett., Vol. 89, 261913, 2006
  202. C. W. Liu, S. Maikap, and C.-Y. Yu, “(Invited)Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, Vol. 21, No. 3, pp. 21-36, May 2005
  203. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen, C. W. Liu, “SiGe/Si PMOSFET using graded channel technique,” Materials Science in Semiconductor Processing, Vol. 8, pp. 347-351, 2005
  204. C.-Y. Yu, P.-W. Chen, S.-R. Jan, M.-H. Liao, K.-F. Liao, and C. W. Liu, “Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers,” Appl. Phys. Lett., Vol. 86, No. 1, pp. 011909, 2005
  205. T. C. Chen, L. S. Lee, W. Z. Lai and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 209-213, 2005
  206. P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 15-19, 2005
  207. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “SiGe/Si PMOSFET Using Graded Channel Technique,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 347-351, 2005
  208. M.-H. Liao, T. C. Chen, M. J. Chen, and C. W. Liu, “Electroluminescence from metal/oxide/strained-Si tunneling diodes,” Appl. Phys. Lett., Vol. 86, No. 22, 223502, 2005
  209. M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu, “Abnormal hole mobility of biaxial strained Si,” J. Appl. Phys, Vol. 98, pp. 066104, 2005
  210. W.-C. Hua, M. H. Lee, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Treading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs,” IEEE Electron Device Letter, Vol. 26, No. 9, pp. 667-669, 2005
  211. 21. K. F. Liao, S. W. Lee, L. J. Chen, P. S. Chen, and C. W. Liu, “Formation of thin relaxed SiGe buffer layer with H-implantation dose and thermal annealing,” Nuclear Inst. and Methods in Physics Research, B, Vol. 237, No. 1-2, pp. 217-222, 2005
  212. S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yGey layer,” J. Vac. Sci. Tech, A, Vol. 23, No. 4, pp.1141-1145, 2005
  213. C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, “Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate,” IEEE Electron Device Letter, Vol. 26, No. 10, pp. 761-763, 2005
  214. S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M.-J. Tsai, and C. W. Liu, “Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys, Vol. 98, pp. 073506, 2005
  215. W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, and K. M. Chen, “Ge Outdiffusion Effect on Flicker Noise in Strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 10, pp. 693-695, 2004
  216. J.-W. Shi, Z. Pei, F. Yuan, Y.-M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Performance Enhancement of High-Speed SiGe Based Heterojunction Phototransistor with Substrate Terminal,” Appl. Phys. Lett., Vol. 85, No. 14, pp. 2947-2949, 2004
  217. B.-C. Hsu, C.-H. Lin, P.-S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum-Dot Infrared Photodetectors,” IEEE Electron Device Letters, Vol. 25, No. 8, pp. 544-546, 2004
  218. S. T. Chang, C. W. Liu, and S. C. Lu, “Base Transit Time of Graded-Base Si/SiGe HBTs Considering Recombination Lifetime and Velocity Saturation,” Solid State Electronics, Vol. 48, No. 2, pp. 207-215, 2004
  219. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, W. Y. Chen, and T. M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” Applied Surface Science, Vol. 224, No. 1-4, pp. 152-155, 2004
  220. S. W. Lee, P. S. Chen, M.-J. Tsai , C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Film, Vol. 447-448, pp. 302-305, 2004
  221. C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap, “Evidence of Si/SiGe heterojunction roughness scattering,” Appl. Phys. Lett., Vol. 85, No. 21, pp. 4947-4949, 2004
  222. Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, “The evolution of electroluminescence in Ge quantum-dot diodes with the fold number,” Appl. Phys. Lett., Vol. 85, No. 25, pp. 6107-6109, 2004
  223. P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition,” Electrochemical and Solid-State Letters, Vol. 7, No. 10, pp. G201-G203, 2004
  224. C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole effective mass in strained Si1-xCx alloys,” J. Appl. Phys., Vol. 96, No. 9, pp. 5037-5041, 2004
  225. J.-W. Shi, Y.-H. Liu, and C. W. Liu, “Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors,” IEEE/OSA, Journal of Lightwave Technology, Vol. 22, No. 6, pp. 1583-1590, 2004
  226. F. Yuan, J.-W. Shi, Z. Pei, and C. W. Liu, “MEXTRAM Modeling of Si/SiGe Heterojunction Phototransistors,” IEEE Trans. Electron Devices, Vol. 51, No. 6, pp. 870-876, 2004
  227. S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 1, pp. 483-485, 2004
  228. Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M.-J. Tsai, and C. W. Liu, “Bandwidth Enhancement in an Integratable SiGe phototransistor by Removal of Excessive Carrier,” IEEE Electron Device Letters, Vol. 25, No. 5, pp. 286-288, 2004
  229. W.-C. Hua, T.-Y. Yang, and C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” Applied Surface Science, Vol. 224, No. 1-4, pp. 425-428, 2004
  230. T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, “Light Emission From Al/HfO2/Silicon Diodes,” J. Appl. Phys., Vol. 95, No. 11, pp. 6486-6488, 2004
  231. F. Yuan, S.-R. Jan, S. Maikap, Y.-H. Liu, C.-S. Liang, and C. W. Liu, “Mechanically strained Si/SiGe HBTs,” IEEE Electron Device Letters, Vol. 25, No. 7, pp. 483-485, 2004
  232. 6. S. W. Lee, P. S. Chen, M.-J. Tsai , C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Film, Vol. 447-448,, pp. 302-305, 2004
  233. 7. C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap, “Evidence of Si/SiGe heterojunction roughness scattering,” Appl. Phys. Lett., Vol. 85 No. 21, pp. 4947-4949, 2004
  234. 8. Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, “The evolution of electroluminescence in Ge quantum-dot diodes with the fold number,” Appl. Phys. Lett.,, Vol. 85, No. 25, pp. 6107-6109, 2004
  235. 9. P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition,” Electrochemical and Solid-State Letters, Vol. 7, No. 10, pp. G201-G203, 2004
  236. C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole effective mass in strained Si1-xCx alloys,” J. Appl. Phys, Vol. 96, No. 9, pp. 5037-5041, 2004
  237. J.-W. Shi, Y.-H. Liu, and C. W. Liu, “Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors,” IEEE/OSA, Journal of Lightwave Technology, Vol. 22, No. 6, pp. 1583-1590, 2004
  238. F. Yuan, J.-W. Shi, Z. Pei, and C. W. Liu, “MEXTRAM Modeling of Si/SiGe Heterojunction Phototransistors,” IEEE Trans. Electron Devices, Vol. 51, No. 6, pp. 870-876, 2004
  239. S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 1, pp. 483-485, 2004
  240. Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M.-J. Tsai, and C. W. Liu, “Bandwidth Enhancement in an Integratable SiGe phototransistor by Removal of Excessive Carrier,” IEEE Electron Device Letters, Vol. 25, No. 5, pp. 286-288, 2004
  241. W.-C. Hua, T.-Y. Yang, and C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” Applied Surface Science, Vol. 224, No. 1-4, pp. 425-428, 2004
  242. T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, “Light Emission From Al/HfO2/Silicon Diodes,” J. Appl. Phys, Vol. 95, No. 11, pp. 6486-6488, 2004
  243. F. Yuan, S.-R. Jan, S. Maikap, Y.-H. Liu, C.-S. Liang, and C. W. Liu, “Mechanically strained Si/SiGe HBTs,” IEEE Electron Device Letters, Vol. 25, No. 7,, pp. 483-485, 2004
  244. Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor,” IEEE Electron Device Letter, Vol. 24, No. 10, pp. 643-645, 2003
  245. M. H. Lee, C.-Y. Yu, F. Yuan, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Reliability Improvement of Rapid Thermal Oxide Using Gas Switching,” IEEE Trans. Semiconductor Manufacturing, Vol. 16, No. 4, pp. 656-659, 2003
  246. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled Nanorings in Si-capped Ge quantum dots on (001) Si,” Appl. Phys. Lett., Vol. 85, No. 23, pp. 5283-5285, 2003
  247. M.-J. Chen, J.-F. Chang, J.-L. Yen, C. S. Tsai, E.-Z. Liang, C.-F. Lin, and C. W. Liu, “Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes,” J. Appl. Phys., Vol. 93, No. 7, pp. 4253-4259, 2003
  248. B.-C. Hsu, S. T. Chang, T.-C. Chen, P.-S. Kuo, P. S. Chen, and C. W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetector,” IEEE Electron Device Letter, Vol. 24, No. 5, pp. 318-320, 2003
  249. C. W. Liu, B.-C. Hsu, K.-F. Chen, M. H. Lee, C.-R. Shie, and P.-S. Chen, “Strain-induced growth of SiO2 dots by liquid phase deposition,” Appl. Phys. Lett., Vol. 82, No. 4, pp. 589-591, 2003
  250. C.-H. Lin, F. Yuan, B.-C Hsu, and C. W. Liu, “Isotope effect of hydrogen release in metal/ oxide/n-silicon tunneling diodes,” Solid-State Electronics, Vol. 47, pp. 1123-1126, 2003
  251. B.-C. Hsu, W.-C. Hua, C.-R. Shie, K.-F. Chen, and C. W. Liu, “The Growth and Electrical Characteristics of Liquid Phase Deposition SiO2 on Ge,” Electrochemical and Solid State Letters, Vol. 6, No. 2, pp. F9-F11, 2003
  252. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled Nanorings in Si-capped Ge quantum dots on (001) Si,” Appl. Phys. Lett, Vol. 85, No. 23, pp. 5283-5285, 2003
  253. B.-C. Hsu, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Oxide Roughness Effect on Tunneling Current of MOS Diodes,” IEEE Trans. Electron Device, pp. 2204-2208, pp. 2204-2208, 2002
  254. C.-H. Lin, F. Yuan, C.-R. Shie, K.-F. Chen, B.-C. Hsu, M. H. Lee, and C. W. Liu, “Roughness- Enhanced Reliability of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol. 23, No. 7, pp. 431-433, 2002
  255. S. T. Chang, C. Y. Lin, and C. W. Liu, “Energy Band Structure of Strained Si1-xCx alloys on Si(001) Substrate,” J. Appl. Phys., Vol. 92, No. 7, pp. 3717-3723, 2002
  256. S. T. Chang, K.-F. Chen, C.-R. Shie, C. W. Liu, M.-J. Chen, and C.-F. Lin, “The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates,” Solid State Electronics, Vol. 46, No. 8, pp. 1113-1116, 2002
  257. M. H. Lee, K.-F. Chen, C.-C. Lai, C. W. Liu, W.-W. Pai, M.-J. Chen and C.-F. Lin, “The roughness-enhanced light emission from metal- oxide-silicon light-emitting diodes using very high vacuum prebake,” Part2 Lett., Jpn. J. Appl. Phys., Vol. 41, No. 3B, pp. L326-L328, 2002
  258. Novel Methods to Incorporate Deuterium in the MOS Structures, “Novel Methods to Incorporate Deuterium in the MOS Structures,” IEEE Electron Device Letters, Vol. 22, No. 11, pp. 519-521, 2001
  259. M.-J. Chen, C.-F. Lin, M. H. Lee, S. T. Chang, and C. W. Liu, “Carrier life time measurements on Electroluminescent Metal-Oxide-Silicon Tunneling Diodes,” Appl. Phys. Lett., Vol. 79, No. 14, pp. 2264-2266, 2001
  260. C.-H. Lin, B.-C. Hsu, M. H. Lee, and C. W. Liu, “A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes,” IEEE Trans. Electron Device, Vol. 48, No. 9, pp. 2125-2130, 2001
  261. B.-C. Hsu, W. T. Liu, C.-H. Lin, and C. W. Liu, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron Device, Vol. 48, No. 8, pp. 1747-1749, 2001
  262. M. H. Lee and C. W. Liu, “A Novel Illuminator Design in a Rapid Thermal Process,” IEEE Trans. Semiconductor Manufacturing, Vol. 14, No. 2, pp. 152-156, 2001
  263. C. W. Liu, C.-H. Lin, M. H. Lee, S. T. Chang, Y. H. Liu, M.-J. Chen, and C.-F. Lin, “Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation,” Appl. Phys. Lett., Vol. 78, No. 10, pp. 1397-1399, 2001
  264. C.-F. Lin, M.-J. Chen, S.-W. Chang, P.-F. Chung, E.-Z. Liang, T.-W. Su, and C. W. Liu, “Electroluminescence at Si Bandgap Energy from Mechanically Pressed ITO/Si Contact,” Appl. Phys. Lett., Vol. 78, No. 13, pp. 1808-1810, 2001
  265. C.-H. Lin, M. H. Lee, and C. W. Liu, “Correlation between Si-H/D bond desorption and injected electron energy in MOS tunneling diodes,” Appl. Phys. Lett., Vol. 78, No. 5, pp. 637-639, 2001
  266. M.-J. Chen, C.-F. Lin, W. T. Liu, S. T. Chang, and C. W. Liu, “Visible and Band-Edge Electroluminescence from ITO/SiO2/Si metal oxide semiconductor structures,” J. Appl. Phys., Vol. 89, No. 1, pp. 323-326, 2001
  267. C.-F. Lin, M.-J. Chen, E.-Z. Liang, W. T. Liu, and C. W. Liu, “Reduced temperature dependence of luminescence from Silicon due to Field-Induced Carrier Confinement,” Appl. Phys. Lett., Vol. 78, No. 3, pp. 261-263, 2001
  268. C. W. Liu and Y. D. Tseng, and M. Y. Chern, “Asymmetrical x-ray reflection of SiGeC/Si Heterostructures,” Materials Chemistry and Physics, Vol. 69, No. 1-3, pp. 274-277, 2001
  269. C. W. Liu, S. T. Chang, W. T. Liu, M.-J. Chen, and C.-F. Lin, “Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 26, pp. 4347-4349, 2000
  270. C. W. Liu, M. H. Lee, S. T. Chang, M.-J. Chen, and C.-F. Lin, “Room-temperature electroluminescence from the metal oxide silicon tunneling diodes on (110) substrates,” Jpn. J. Appl. Phys., Vol. 39, No. 10B, pp. L1016 - L101, 2000
  271. C. W. Liu, M. H. Lee, M.-J. Chen, C.-F. Lin, and M. Y. Chern, “Roughness-Enhanced Electroluminescence from Metal Oxide Silicon Tunneling Diodes,” IEEE Electron Device Letters, Vol. 21, No. 12, pp. 601-603, 2000
  272. C. W. Liu, M.-J. Chen, I. C. Lin, M. H. Lee, and C.-F. Lin, “Temperature dependence of the electron-hole-plasma electroluminescence from the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 8, pp. 1111- 1113, 2000
  273. C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Letters, Vol. 21, No. 6, pp. 307-309, 2000
  274. C. W. Liu and T. X. Hsieh, “Analytical modeling of the subthreshold behavior in MOSFETs,” Solid State Electronics, Vol. 44, No. 9, pp. 1707-1710, 2000
  275. C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Infrared Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon,” Journal of Physics: Condensed Matter, Vol. 12, No. 11, pp. L205-L210, 2000
  276. C. W. Liu, Y. H. Huang, C. Y. Chen, S. Gurtler, C. C. Yang, Y. Chang, and L. P. Chen, “Infrared absorption study of laser induced oxide on Si and SiGe layers,” Material Chemistry and Physics, Vol. 65, No. 3, pp. 350-353, 2000
  277. C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Electroluminescence at Si Bandgap Energy Based on Metal-oxide-silicon Structures,” J. Appl. Phys., Vol. 87, No. 12, pp. 8793-8795, 2000
  278. C. W. Liu, M. H. Lee, M.-J. Chen, I. C. Lin, and C-F Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 76, No. 12, pp. 1516-1518, 2000
  279. C. Y. Chen, K. J. Ma, Y. S. Lin, C. W. Liu, C. Y. Chao, S. Gu, C. W. Hsu, and C. C. Yang, “Formation of Silicon Surface Grating with High Pulse-Energy UV Laser,” J. Appl. Phys., Vol. 88, No. 11, pp. 6162-6169, 2000
  280. C. W. Liu, Y. D. Tseng, and Y. S. Huang, “Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition,” Appl. Phys. Lett., Vol. 75, No. 15, pp. 2271-2273, 1999
  281. C. W. Liu, Y. D. Tseng, M. Y. Chern, C. L. Chang, and J. C. Sturm, “Thermal Stability of Si/SiGeC/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition,” J. Appl. Phys., Vol. 85, No. 4, pp. 2124-2128, 1999
  282. C. Y. Lin, C. W. Liu, and L. J. Lee, “Valence Band Properties of Relaxed Ge1-xCx Alloys,” Material Chemistry and Physics, Vol. 52, No. 1, pp. 31-35, 1998
  283. C. W. Liu and J. C. Sturm, “Low Temperature Chemical Vapor Deposition of -SiC on (100) Si Using Methylsilane and Device Characteristics,” J. Appl. Phys., Vol. 82, No. 9, pp. 4558-4565, 1997
  284. C. Y. Lin and C. W. Liu, “Hole Effective Masses of Si1-xCx and Si1-yGey alloys,” Appl. Phys. Lett., Vol. 70, No. 11, pp. 1441-1443, 1997
  285. C. W. Liu and V. Venkataraman, “Growth and Electron Effective Mass Measurements of Strained Si and Si0.94Ge0.06 on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition,” Material Chemistry and Physics, Vol. 49, No. 1, pp. 29-32, 1997
  286. C. Y. Chao, C. Y. Chen, C. W. Liu, Y. Chang, and C. C. Yang, “Direct Writing of Silicon Grating with Highly Coherent UV Laser,” Appl. Phys. Lett., Vol. 71, No. 17, pp. 2442-2444, 1997
  287. C. W. Liu, St. A. Amour, J. C. Sturm, Y. Lacroix, M. L. W Thewalt, C. W. Magee, and D. Eaglesham, “Growth and Photoluminescence of High Quality SiGeC Alloy Layers on Si (100) Substrates,” J. Appl. Phys., Vol. 80, No. 5, pp. 3043-3047, 1996
  288. L. D. Lanzerotti, A. St. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, and N. D. Theodore, “Si/Si1-x-yGexCy/Si Heterojunction Bipolar Transistors,” IEEE Electron Device Letters, Vol. 17, No. 7, pp. 334-337, 1996
  289. St. A. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, and M. L. W Thewalt, “Defect-Free Band-Edge Photoluminescence and Bandgap Measurement of Pseudomorphic SiGeC Alloy Layers on Si (100),” Appl. Phys. Lett., Vol. 67, No. 26, pp. 3915-3917, 1995
  290. Yu-Rui Chen, Zefu Zhao, Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-Dielectrics,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1601-1604
  291. M. H. Liao, T.-H. Cheng, C. W. Liu, Lingyen Yeh, T.-L. Lee, and M.-S. Liang, “2�慆 electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction,” J. Appl. Phys., Vol. 103, 013105

Conference & proceeding papers:

  1. Min-Kuan Lin, Jhih-Yuan Liang, Ying-Qi Liu, Wei-Jen Chen, Jui-Yu Hsu, Xuan-Hao Wu, Jie-Ni Dai, Yan-Jyun Chen, Bo-Hui Yu, Zhi-En Fan, Yi-Ming Mei, Ming-Hao Lee, Ming-Wen Chu, Pin Su, Chenming Hu, and C. W. Liu, “Interfacial-Layer-Free NCFETs Achieving 2mV Hysteresis, 27mV/dec SS, 2mV/V DIBL, and Record 2088µA/µm ION at VDS = VOV = 0.5V,” Symposium on VLSI Technology and Circuits (VLSI), Jun. 2026
  2. Nikolay Petkov, Chadrashekar Lakshmi Narayana, Sheshank Biradar, Karim Cherkaoui, Ian Povey, Fathima Laffir, Esther Adegoke, C. W. Liu, “Fabrication and characterisation of GeSn devices for quantum applications,” 12th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2026), May 2026
  3. Ching-Wang Yao, Fang-Yu Chang, Yu-Sheng Lai, Tao Chou, and C. W. Liu, “Design Technology Co-Optimization for Digital Compute-in-memory with Area-efficient CFET 10T3P SRAM,” 2026 IEEE International Symposium on Circuits and Systems (ISCAS), May 2026
  4. Jhih-Yuan Liang and C. W. Liu, “Highly Reliable and Low Voltage Ultrathin Ferroelectric Superlattice HZO by Low Lattice Misfit β-W,” E-MRS 2026 Spring Meeting & Exhibit, May 2026
  5. Chia-Wei Tseng, Tao Chou, Tzu-An Chang, Yueh-Hsun Lin, and C. W. Liu, “AI-Driven Physics-Based Metamodel Enabling Rapid Thermal-Aware Floorplanning in 3D-IC Exploration,” 2026 IEEE 25th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), May 2026
  6. Avishek Das, Kuan-Wei Lu, Gwangjin Bak, Sakshi Dubey, Yang-En Hu, and C. W. Liu, “Optimization of Dual-Contact Ge PIN Photodetectors with an Bandwidth of 303 GHz,” 2026 IEEE Silicon Photonics Conference (SiPhotonics), Apr. 2026
  7. Wei-Jen Chen, Ying-Qi Liu, Tao Chou, Chun-Yen Tseng, Chih-En Fan, Yi-Ming Mei, and C. W. Liu, “Si Ultrathin Body Nanosheet by Sophisticated Wet Etching,” 2026 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2026
  8. Jhih-Yuan Liang, Yu-Rui Chen, and C. W. Liu, “Metal-Insulator-Metal Capacitors with Low Leakage Current and Low CET for DRAM Applications,” 2026 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2026
  9. Chin-Hsuan Lu, Hsin-Cheng Lin, Tao Chou, Ching-Wang Yao, and C. W. Liu, “Performance Enhancement of Nanosheet/Nanowire RF Transistor Arrays by Backside Metal Layout,” 2026 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2026
  10. Hsien-Ming Sung, Yu-Shan Wu, Yuan-Ming Liu, Ying-Jung Chen, and C. W. Liu, “Titanium as Oxygen Scavenging/Etching Stop Layers to Boost Ion of Self-Aligned IGZO Top-Gate Transistors,” 2026 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2026
  11. Chia-Wei Tseng, Hsin-Cheng Lin, Ho-Ming Tong, and C. W. Liu, “Advanced Liquid Cooling for 2.5D ICs: Integrated Top Diamond Heat Spreader with Embedded Liquid Channels,” IEEE Electronics Packaging Technology Conference (EPTC), Dec. 2025
  12. Yu-Tsung Liao, Jhih-Yuan Liang, Tao Chou, Guan-Hua Chen, Yun-Wen Chen, Yu-Rui Chen, Wei-Jen Chen, Min-Kuan Lin, Yan-Jyun Chen, Yu-An Chen, Bo-Hui Yu, Hidenari Fujiwara, Ming-Chang Liu, Kuan-Heng Lin, Dai-Ying Lee, Ming-Hsiu Lee, and C. W. Liu, “HZO MFM with Record 45μC/cm2 2Pr @ ≤3nm, Record 60 2Pr/Vop, and Record >8E12 Endurance by β-W Electrodes and Initial Solid Phase Epitaxy with 1.2V NVSRAM Applications,” International Electron Devices Meeting (IEDM), Dec. 2025
  13. Yu-Shan Wu, Rong-Wei Ma, Yuan-Ming Liu, Johannes Gracia, Chuan-Wei Kuo, Hsien-Ming Sung, Hidenari Fujiwara, Ting-Chang Chang, and C. W. Liu, “First Demonstration of Fluorine Supercritical Fluid Passivated 2-floor GAA In2O3 Nanosheets Achieving Positive 0.7 V VT, 67 mV/dec SS, 1309 µA/µm ID,max, Record 47 mV PBS, and Negligible NBS,” International Electron Devices Meeting (IEDM), Dec. 2025
  14. Tao Chou, Hsin-Cheng Lin, Ching-Wang Yao, Yu-Sheng Lai, Fang-Yu Chang, Chia-Wei Tseng, Tzu-An Chang, He-Wen Shen, and C. W. Liu, “Transistor-to-Package Thermal Simulation with Hotspot Mitigation by Decoupling,” International Electron Devices Meeting (IEDM), Dec. 2025
  15. Jhih-Yuan Liang, Yu-Rui Chen, Guan-Hua Chen, Yun-Wen Chen, Min-Hsuan Tsai, Kuan-Heng Lin, Bo-Hui Yu, Yan-Jyun Chen, Yu-An Chen, and C. W. Liu, “Water-Quenched AFE-Like/FE HZO with TiN Top Electrodes Enabling 0.75V Vop and Endurance > 7E12,” 56th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2025
  16. Jhih-Yuan Liang, Yu-Rui Chen, Guan-Hua Chen, Yun-Wen Chen, Yu-An Chen, Bo-Hui Yu, Yan-Jyun Chen, and C. W. Liu, “Stacked AFE-Like/FE HZO (4.5nm) to Achieve 0.75V Operating Voltage and Record Endurance Exceeding 7E12 Using Water Quenching and TiN Top Electrodes,” Symposium on VLSI Technology and Circuits (VLSI), Jun. 2025
  17. Tao Chou, He-Wen Shen, Yu-Sheng Lai, Chia-Wei Tseng, Fang-Yu Chang, Hsin-Cheng Lin, Ching-Wang Yao, and C. W. Liu, “Unified Physics-Based CFET Thermal SPICE considering BEOL, Substrate, and BSPDN using Adiabatic Cones,” Symposium on VLSI Technology and Circuits (VLSI), Jun. 2025
  18. Yu-Shan Wu, Yuan-Ming Liu, Hsien-Ming Sung, Rong-Wei Ma, Johannes Gracia, Hidenari Fujiwara, Kuan-Wei Lu, and C. W. Liu, “First Demonstration of 2-floor GAA In2O3 Nanosheet FET Enabled by TiN Sacrificial Layers and Fluorine Passivation,” Symposium on VLSI Technology and Circuits (VLSI), Jun. 2025
  19. Bo-Wei Huang, Ying-Qi Liu, Ching-Wang Yao, Wei-Jen Chen, Min Kuan Lin, Xin-Yuan Lin, Chun-Yi Cheng, Yi Huang, Ding-Wei Lin, Chih-Hsuan Lu, Tsung-Han Tsai, and C. W. Liu, “First Demonstration of Monolithic 3-Tier Nanosheet Transistor Stacking with Split Gate Featuring Tri-State Inverter/Half SRAM Functionalities,” Symposium on VLSI Technology and Circuits (VLSI), Jun. 2025
  20. Min-Kuan Lin, Ding-Wei Lin, Jui-Yu Hsu, Guan-Hua Chen, Bo-Hui Yu, Wei-Jen Chen, Bo-Wei Huang, Tao Chou, Yi-Chun Liu, Yu-Rui Chen, Hong-Yi Tu, Ting-Chang Chang, and C. W. Liu, “O/H Supercritical Fluid Passivation on Stacked Ge0.95Si0.05 Nanosheet nFETs,” IEEE Silicon Nanoelectronics Workshop (SNW), Jun. 2025
  21. (keynote) Bo-Wei Huang and C. W. Liu, “CFETs and beyond,” 5th Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2025
  22. Yuan-Ming Liu, Hsien-Ming Sung, Yu-Shan Wu, Rong-Wei Ma, Johannes Gracia, Hidenari Fujiwara, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Reliability Study of Self-Aligned Top-Gated a-IGZO TFTs by N2 and N2O Plasma Treatment,” 2025 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2025
  23. Avishek Das, Logeshwaran Venkatesapandian, Gwangjin Bak, and C. W. Liu, “Design and Optimization of Ge PINIP Photodetectors for Enhanced Responsivity and Bandwidth in Ultrafast Photonic Applications,” 2025 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2025
  24. Ching-Wang Yao, Tzu-Yun Liu, Tao Chou, Hsin-Cheng Lin, and C. W. Liu, “Modeling and Simulation of Intrinsic Gate Capacitance in Ultrathin Body Nanosheets Including Quantum Effects,” 2025 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2025
  25. (Highlight Paper) Guan-Hua Chen, Yu-Tsung Liao, Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wei-Jen Chen, Wei-Teng Hsu, Hao-Yi Lu, Ming-Chang Liu, Yu-An Chen, and C. W. Liu, “Uniform and Fatigue-Free Ferroelectric HZO with Record EBD of 6.3MV/cm and Record Final 2Pr of 64μC/cm2 at Record 5E12 Endurance Using Low Lattice Misfit (2.9%) β-W,” International Electron Devices Meeting (IEDM), Dec. 2024
  26. C.-H. Liu, K.-Y. Hsiang, F.-S. Chang, Y.-T. Chang, C. W. Liu, and M. H. Lee, “Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH),” International Electron Devices Meeting (IEDM), Dec. 2024
  27. Bo-Wei Huang, Chun-Yi Cheng, Wan-Hsuan Hsieh, Yu-Rui Chen, Wei-Jen Chen, Yi-Chun Liu, Min-Kuan Lin, Ying-Qi Liu, Hao-Yi Lu, Yi Huang, Ding-Wei Lin, and C. W. Liu, “WNxCy VT Tuning of Split Gate Nanosheet CFET with Dual Work Function Metals Achieving 0.93 VT Match/ Improved 0.24V Noise Margin/ Record Gain of 61V/V,” International Electron Devices Meeting (IEDM), Dec. 2024
  28. Yu-Shan Wu, Chuan-Wei Kuo, Yuan-Ming Liu, Jih-Chao Chiu, Johannes Gracia, Rong-Wei Ma, Hidenari Fujiwara, Yu-Cheng Fan, Hsien-Ming Sung, Ting-Chang Chang, and C. W. Liu, “Performance Enhancement of PEALD-In2O3 BCE TFTs and GAA Nanosheet FETs by Oxygen Supercritical Fluid Passivation,” 55th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2024
  29. Yu-Tsung Liao, Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, and C. W. Liu, “C-axis Oriented Hf0.5Zr0.5O2 on Flat TiN Achieving High Remanent Polarization, High Breakdown Field, and Endurance > 4E12,” 55th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2024
  30. Bo-Wei Huang, Wei-Jen Chen, Yu-Rui Chen, and C. W. Liu, “Enhanced Breakdown Voltage and Photo Response of Ultrathin Body Nanosheets,” 55th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2024
  31. C.-H. Liu, K.-Y. Hsiang, F.-S. Chang, Y.-T. Chang, C. W. Liu, and M. H. Lee, “Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH),” International Electron Devices Meeting (IEDM), Dec. 2024
  32. Guan-Hua Chen, Yu-Tsung Liao, Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wei-Jen Chen, Wei-Teng Hsu, Hao-Yi Lu, Ming-Chang Liu, Yu-An Chen, and C. W. Liu, “Uniform and Fatigue-Free Ferroelectric HZO with Record EBD of 6.3MV/cm and Record Final 2Pr of 64μC/cm2 at Record 5E12 Endurance Using Low Lattice Misfit (2.9%) β-W,” International Electron Devices Meeting (IEDM), Dec. 2024
  33. Bo-Wei Huang, Chun-Yi Cheng, Wan-Hsuan Hsieh, Yu-Rui Chen, Wei-Jen Chen, Yi-Chun Liu, Min-Kuan Lin, Ying-Qi Liu, Hao-Yi Lu, Yi Huang, Ding-Wei Lin, and C. W. Liu, “WNxCy VT Tuning of Split Gate Nanosheet CFET with Dual Work Function Metals Achieving 0.93 VT Match/ Improved 0.24V Noise Margin/ Record Gain of 61V/V,” International Electron Devices Meeting (IEDM), Dec. 2024
  34. Yu-Shan Wu, Chuan-Wei Kuo, Yuan-Ming Liu, Jih-Chao Chiu, Johannes Gracia, Rong-Wei Ma, Hidenari Fujiwara, Yu-Cheng Fan, Hsien-Ming Sung, Ting-Chang Chang, and C. W. Liu, “Performance Enhancement of PEALD-In2O3 BCE TFTs and GAA Nanosheet FETs by Oxygen Supercritical Fluid Passivation,” 55th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2024
  35. Yu-Tsung Liao, Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, and C. W. Liu, “C-axis Oriented Hf0.5Zr0.5O2 on Flat TiN Achieving High Remanent Polarization, High Breakdown Field, and Endurance > 4E12,” 55th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2024
  36. Bo-Wei Huang, Wei-Jen Chen, Yu-Rui Chen, and C. W. Liu, “Enhanced Breakdown Voltage and Photo Response of Ultrathin Body Nanosheets,” 55th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2024
  37. C. W. Liu, “Nanosheets and CFETs,” XIX International Small-Angle Scattering Conference (SAS2024), Taipei, Taiwan, Nov. 2024
  38. Guan-Hua Chen, Yu-Rui Chen, Yu-Tsung Liao, Yu-An Chen, Bo-Hui Yu, Yan-Jyun Chen, Chun-Yen Tseng, and C. W. Liu, “Hf0.5Zr0.5O2 Orthorhombic Phase Identification by X-Ray Absorption Spectroscopy and Nano-Beam Electron Diffraction,” National Synchrotron Radiation Research Center 30th Users' Meeting & Workshops, Hsinchu, Taiwan, Oct. 2024
  39. C. W. Liu, “Nanosheets and CFETs Enabled by Epi Doping,” 24th International Conference on Ion Implantation Technology 2024 (24th IIT 2024), Toyama, Japan, Sept. 2024
  40. Rong-Wei Ma, Yuan-Ming Liu, Yu-Shan Wu, Jih-Chao Chiu, Yu-Cheng Fan, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Enhanced Electrical Properties and Positive Bias Stress of Self-Aligned Top-Gate a-IGZO TFTs by Hydrogen Incorporation,” 4th Symposium on Nano-Device Circuits and Technologies (SNDCT), Taichung, Taiwan, Aug. 2024
  41. Johannes Gracia, Yuan-Ming Liu, Yu-Rui Chen, Jih-Chao Chiu, Yu-Shan Wu, Zefu Zhao, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Achieving 2.1V Memory Window and High Reliability in ZnO-Rich a-InGaZnO Ferroelectric FET with Self-Aligned Top-Gate Structure,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  42. Yu-Tsung Liao, Yu-Rui Chen, Zefu Zhao, Wan-Hsuan Hsieh, Guan-Hua Chen, Yu-An Chen, and C. W. Liu, “Stacked Ge0.95Si0.05 Nanosheet Gate-All-Around FeFETs,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  43. Johannes Gracia, Yuan-Ming Liu, Yu-Rui Chen, Jih-Chao Chiu, Yu-Shan Wu, Zefu Zhao, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Achieving 2.1V Memory Window and High Reliability in ZnO-Rich a-InGaZnO Ferroelectric FET with Self-Aligned Top-Gate Structure,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  44. Yu-Tsung Liao, Yu-Rui Chen, Zefu Zhao, Wan-Hsuan Hsieh, Guan-Hua Chen, Yu-An Chen, and C. W. Liu, “Stacked Ge0.95Si0.05 Nanosheet Gate-All-Around FeFETs,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  45. Avishek Das, Yu-Chieh Lee, and C. W, Liu , “Performance Optimization of Backside Illuminated CMOS Image Sensor Using Surrounded Vertical Transfer Gates,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  46. Avishek Das, Logeshwaran Venkatesapandian, and C. W, Liu, “Optimization of a Ge Lateral PIN Photodetector with an Optical -3dB Bandwidth of 207 GHz for Ultrafast Photonics Applications, “Optimization of a Ge Lateral PIN Photodetector with an Optical -3dB Bandwidth of 207 GHz for Ultrafast Photonics Applications,” 4th Symposium on Nano-Device Circuits and Technologies (SNDCT), Taichung, Taiwan, Aug. 2024
  47. Rong-Wei Ma, Yuan-Ming Liu, Yu-Shan Wu, Jih-Chao Chiu, Yu-Cheng Fan, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Enhanced Electrical Properties and Positive Bias Stress of Self-Aligned Top-Gate a-IGZO TFTs by Hydrogen Incorporation,” 4th Symposium on Nano-Device Circuits and Technologies (SNDCT), Taichung, Taiwan, Aug. 2024
  48. Johannes Gracia, Yuan-Ming Liu, Yu-Rui Chen, Jih-Chao Chiu, Yu-Shan Wu, Zefu Zhao, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Achieving 2.1V Memory Window and High Reliability in ZnO-Rich a-InGaZnO Ferroelectric FET with Self-Aligned Top-Gate Structure,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  49. Yu-Tsung Liao, Yu-Rui Chen, Zefu Zhao, Wan-Hsuan Hsieh, Guan-Hua Chen, Yu-An Chen, and C. W. Liu, “Stacked Ge0.95Si0.05 Nanosheet Gate-All-Around FeFETs,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  50. Avishek Das, Yu-Chieh Lee, and C. W, Liu, “Performance Optimization of Backside Illuminated CMOS Image Sensor Using Surrounded Vertical Transfer Gates,” 2024 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, Aug. 2024
  51. Avishek Das, Logeshwaran Venkatesapandian, and C. W, Liu, “Optimization of a Ge Lateral PIN Photodetector with an Optical -3dB Bandwidth of 207 GHz for Ultrafast Photonics Applications,” 4th Symposium on Nano-Device Circuits and Technologies (SNDCT), Taichung, Taiwan, Aug. 2024
  52. Bo-Wei Huang, Yu-Rui Chen, Tao Chou, Hsin-Cheng Lin, Chien-Te Tu, Yi-Chun Liu, Wan-Hsuan Hsieh, Wei-Jen Chen, Min-Kuan Lin, Ying-Qi Liu, Li-Kai Wang, Hung-Chun Chou, Yi Huang, Ding-Wei Lin, and C. W. Liu, “Enhanced Electrical Performance of Ultrathin Body Nanosheets,” IEEE Silicon Nanoelectronics Workshop (SNW), Jun. 2024
  53. Zefu Zhao, Yu-Rui Chen, Yu-Tsung Liao, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, Dai-Ying Lee, Ming-Hsiu Lee, and C. W. Liu, “Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 C/cm2 with Endurance > 4E12,” Symposium on VLSI Technology and Circuits (VLSI), Jun. 2024
  54. Bo-Wei Huang, Yu-Rui Chen, Tao Chou, Hsin-Cheng Lin, Chien-Te Tu, Yi-Chun Liu, Wan-Hsuan Hsieh, Wei-Jen Chen, Min-Kuan Lin, Ying-Qi Liu, Li-Kai Wang, Hung-Chun Chou, Yi Huang, Ding-Wei Lin, and C. W. Liu, “Enhanced Electrical Performance of Ultrathin Body Nanosheets,” IEEE Silicon Nanoelectronics Workshop (SNW), Jun. 2024
  55. Avishek Das, Hsin-Cheng Lin, and C. W. Liu, “BEOL Layout Optimization to Improve RF Performance of 40nm Node Technology for High-Frequency Applications,” 2024 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2024
  56. Yu-Chieh Lee, Avishek Das, Yi Huang, Logeshwaran Venkatesapandian, and C. W. Liu, “Enhanced Charge Transfer Efficiency Using Ring Vertical Transfer Gates in Backside Illuminated CMOS Image Sensor,” 2024 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2024
  57. Yun-Wen Chen and C. W. Liu, “Ferroelectric Properties of HZO Orthorhombic (Pca21, Pmn21) Phases under Shear Strain -A Theoretical Study,” 2024 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2024
  58. Hsin-Cheng Lin, Chia-Wei Tseng, Yu-Ying Chen, Ho-Ming Tong, and C. W. Liu, “High-thermal-conductivity Dummy Die and Finned Lid for Enhanced Liquid Cooling of 2.5D ICs,” IEEE Electronics Packaging Technology Conference (EPTC), 2024
  59. Hsin-Cheng Lin, Chia-Wei Tseng, Yu-Ying Chen, Ho-Ming Tong, and C. W. Liu, “High-thermal-conductivity Dummy Die and Finned Lid for Enhanced Liquid Cooling of 2.5D ICs,” IEEE Electronics Packaging Technology Conference (EPTC), 2024
  60. Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Wei-Jen Chen, Chien-Te Tu, and C. W. Liu, “High- (47) Hf0.2Zr0.8O2 Gate Stacks Integrated into 8 Stacked Ge0.95Si0.05 Nanowire and Nanosheet nFETs to Significantly Enhance ION,” 54th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2023
  61. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Demonstration of a-InGaZnO Gate-all-around Nanosheet FETs,” 54th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2023
  62. Yuan-Ming Liu, Eknath Sarkar, Yu-Rui Chen, Jih-Chao Chiu, Zefu Zhao, Yu-Ciao Chen, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Large Memory Window of 2.7 V and High Endurance > 1011 Cycles in Self-Aligned Top-Gated a-InGaZnO Ferroelectric FET by Incorporating ZnO-Rich,” 54th IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2023
  63. Yu-Cheng Fan, Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Rong-Wei Ma, and C. W. Liu, “Demonstration of a-IGZO Nanosheet GAAFET with Achievable Small S.S. =75 mV/dec, Low Ioff =10-6μA/μm, DIBL=92mV/dec, and BEOL Compatible Process Temperature of 300℃,” 2023 International Electron Devices and Materials Symposium (IEDMS), Kaohsiung, Taiwan, Oct. 2023
  64. Wei-Jen Chen, Chin-Yu Liu, Geng-Min He, Cheng-Hsien Hsin, and C. W. Liu, “Current and Energy Reduction of Spin-Orbit Torque Switching with Spin-Transfer Torque by Micromagnetic Simulation,” 2023 International Electron Devices and Materials Symposium (IEDMS), Kaohsiung, Taiwan, Oct. 2023
  65. Yu-Chieh Lee, Yi Huang, and C.W. Liu, “Improvement of Optical Efficiency and Quantum Efficiency using Cuboid and Central Ring Scattering Technology in Backside Illuminated CMOS Image Sensors,” 2023 International Electron Devices and Materials Symposium (IEDMS), Kaohsiung, Taiwan, Oct. 2023
  66. Wei-Teng Hsu, Avishek Das, Hsin-Cheng Lin, Chin-Yu Liu, Ching-Wang Yao, Tao Chou, Tsai-Yu Chung, and C. W. Liu, “6G RF Performance Benchmark of FinFET/Nanosheets/Nanowires,” 2023 International Electron Devices and Materials Symposium (IEDMS), Kaohsiung, Taiwan, Oct. 2023
  67. Chun-Yi Cheng, Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Wan-Hsuan Hsieh, Hung-Chun Chou, Hao-Yi Lu, Min-Kuan Lin, Ding-Wei Lin, and C. W. Liu, “Monolithic 3D Self-aligned GeSi Channel Complementary FETs,” 2023 International Electron Devices and Materials Symposium (IEDMS), Kaohsiung, Taiwan, Oct. 2023
  68. Rachit Dobhal, Yifan Xing, Yu-Rui Chen, Jer-Fu Wang, Zefu Zhao, Yun-Wen Chen, and C. W. Liu, “Cryogenic Phase Transition of Hf0.5Zr0.5O2 for Enhanced Ferroelectricity,” 2023 International Electron Devices and Materials Symposium (IEDMS), Kaohsiung, Taiwan, Oct. 2023
  69. Yi-Chun Liu, Chien-Te Tu, Wan-Hsuan Hsieh, Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “Stacking High Mobility Channels,” 244th ECS Meeting, Gothenburg, Sweden, Oct. 2023
  70. Chien-Te Tu, Wan-Hsuan Hsieh, Yi-Chun Liu, Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “Channel and Transistor Stacking of Nanosheets,” International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sept. 2023
  71. Hsin-Cheng Lin, Kuan-Ying Chiu, Wen-Teng Hsu, Tsai-Yu Chung, and C. W. Liu, “BEOL and RF Performance Optimization of Stacked Nanosheets/Nanowires,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  72. Yi-Chun Liu, Wan-Hsuan Hsieh, Bo-Wei Huang, Chun-Yi Cheng, Chien-Te Tu, and C. W. Liu, “10 Stacked Ge0.95Si0.05 Nanowire nFETs Featuring High ION=140μA (6500μA/μm) at VOV=VDS=0.5V by CVD Epitaxy and Wet Etching,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  73. Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chun-Yi Cheng, and C. W. Liu, “Monolithic 3D Self-aligned Ge0.75Si0.25 Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation and Highly Selective Wet Etching,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  74. Bo-Wei Huang, Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, and C. W. Liu, “Ge0.9Sn0.1 Ultrathin Bodies with Nearly Ideal Subthreshold Swing and Delay Reduction,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  75. Yu-Rui Chen, Zefu Zhao, Yun-Wen Chen, and C. W. Liu, “Enhanced Ferroelectric / Anti-ferroelectric Characteristics of Hf0.5Zr0.5O2 with Superlattice / Alloy by Oxygen Vacancy Optimization,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  76. Guan-Hua Chen, Yifan Xing, Yu-Rui Chen, Zefu Zhao, Yun-Wen Chen, and C. W. Liu, “Hf0.5Zr0.5O2 Orthorhombic Phase Formation by Temperature Optimization,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  77. Wan-Hsuan Hsieh, Chien-Te Tu, Yi-Chun Liu, and C. W. Liu, “Reduce Boron Pile-up Effect in Ge:B/Ge:P Multi-layer Structures for CFET Isolation,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  78. Eknath Sarkar, Yu-Chieh Lee, Yichen Ma, Yi-Huang and C. W. Liu, “Enhancement of Optical and Quantum Efficiency using Central Ring/Cuboid Scattering Technology in Backside Illuminated CMOS Image Sensors,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  79. Eknath Sarkar, Yu-Rui Chen, Jih-Chao Chiu, Zefu Zhao, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan and C. W. Liu, “Memory Window Enlargement by ZnO Incorporation in Top-Gated Self-Aligned a-InGaZnO FeFETs with High Endurance >1E11 Cycles,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  80. Yuan-Ming Liu, Jih-Chao Chiu, Eknath Sarkar, Yu-Ciao Chen, Yu-Cheng Fan, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Temperature Dependence on Electrical Properties of Double-Layer a-IGZO TFTs with a Top Barrier,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  81. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, and C. W. Liu, “Short Channel Backend a-IGZO Transistors: Planar and GAAFET,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  82. Tao Chou, Li-Kai Wang, Tsai-Yu Chung, Ching-Wang Yao, Hsin-Cheng Lin, and C. W. Liu, “Architecture and Optimization of Sequential Heterogeneous 3D Stacked 6T SRAM,” 3rd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2023
  83. Abhijit Aich, Asim Senapati, Zhao-Feng Lou, Fu-Sheng Chang, Yu-Rui Chen, Yi-Pin Chen, Shih-Yin Huang, Siddheswar Maikap, Chee-Wee Liu, and Min-Hung Lee, “Novel WNx/C Interfacial Layer on Hf0.5Zr0.5O2 Ferroelectric Memory,” 2023 International Conference on Solid State Devices and Materials (SSDM2023), Nagoya, Japan, 2023
  84. Asim Senapati, Zhao-Feng Lou, Fu-Sheng Chang, Yu-Rui Chen, Yi-Pin Chen, Shih-Yin Huang, Siddheswar Maikap, Chee-Wee Liu, and Min-Hung Lee, “A Thin TiNx Layer on Pt Electrode Based Hf0.33Zr0.66O2 Ferroelectric Memory,” 2023 International Conference on Solid State Devices and Materials (SSDM2023), Nagoya, Japan, 2023
  85. Chien-Te Tu, Wan-Hsuan Hsieh, Yu-Rui Chen, Bo-Wei Huang, Yu-Tsung Liao, Wei-Jen Chen, Yi-Chun Liu, Chun-Yi Cheng, Hung-Chun Chou, Hao-Yi Lu, Cheng-Hsien Hsin, Geng-Min He, Dong Soo Woo, Shee-Jier Chueh, and C. W. Liu, “First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels,” International Electron Devices Meeting (IEDM), 2023
  86. Yu-Rui Chen, Chien-Te Tu, Zefu Zhao, Yi-Chun Liu, Bo-Wei Huang, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-κ Dielectrics Featuring High ION per Footprint of 4800 μA/μm at VOV=VDS=0.5V,” 2023 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2023
  87. Hsin-Cheng Lin, Kuan-Ying Chiu, Ching-Wang Yao, Tao Chou, Tsai-Yu Chung, and C. W. Liu, “BEOL Design and RF Performance of Stacked Si Nanosheets and Nanowires,” 2023 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2023
  88. Eknath Sarkar, Yichen Ma, Yu-Chieh Lee, and C. W. Li, “Effects of Deep Trench Isolation Shape and Microlens Radius of Curvature on Optical and Electrical crosstalk in Backside Illuminated CMOS Image Sensors,” 2023 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2023
  89. K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee, “Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1-xZrxO2 for Quantum Computing Applications,,” International Reliability Physics Symposium (IRPS), 2023
  90. Chien-Te Tu, Yi-Chun Liu, Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “Nanosheet Extensions and Beyond,” 2023 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2023
  91. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, and C. W. Liu, “First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61 mV/dec, Ioff<10-7A/m, DIBL=44 mV/V, Positive VT, and Process Temp. of 300 oC,” Symposia on VLSI Technology and Circuits (VLSI), 2023
  92. Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Jia-Yang Lee, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm2 and Endurance > 1E11,” Symposia on VLSI Technology and Circuits (VLSI), 2023
  93. Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, and C. W. Liu, “First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles,” Symposia on VLSI Technology and Circuits (VLSI), 2023
  94. Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, and C. W. Liu, “Extremely High- Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record ION per Footprint of 9200μA/μm and Record ION per Stack of 360μA at VOV=VDS=0.5V,” Symposia on VLSI Technology and Circuits (VLSI), 2023
  95. J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, C. W. Liu, and M. H. Lee, “3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109 Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs,” Symposia on VLSI Technology and Circuits (VLSI), 2023
  96. K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, and M. H. Lee, “FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations,” Symposia on VLSI Technology and Circuits (VLSI), 2023
  97. Yuan-Ming Liu, Jih-Chao Chiu, Eknath Sarkar, Yu-Ciao Chen, Yu-Cheng Fan, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou and C. W. Liu, “Temperature Dependence Electrical Properties of a-IGZO TFTs with Single and Double Channels,” 2022 International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 2022
  98. Eknath Sarkar, Yichen Ma, Yu-Chieh Lee, and C. W. Liu, “Crosstalk Study with Deep Trench Isolation Shape and Microlens Radius of Curvature in Backside Illuminated CMOS Image Sensors,” 2022 International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 2022
  99. Dong Soo Woo, Chien-Te Tu, Chun-Yi Cheng, Bo-Wei Huang, Yi-Chun Liu, and C. W. Liu, “TreeFETs Combining Stacked Nanosheet and {110} Straight Interbridges,” 2022 International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 2022
  100. Shee-Jier Chueh, Yi-Chun Liu, Chun-Yi Cheng, Bo-Wei Huang, Chien-Te Tu, and C. W. Liu, “Highly Stacked Ge0.75Si0.25 Nanosheet nFETs,” 2022 International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 2022
  101. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Song-Ling Li, Ming-Xuan Lee, Yu-Ciao Chen, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Negative Bias Illumination Stress on a-IGZO TFT with a Top Barrier,” 242nd ECS Meeting, Atlanta, GA, USA, Oct. 2022
  102. C. W. Liu, Chien-Te Tu, Bo-Wei Huang, and Chun-Yi Cheng, “Stacked Nanosheet FETs and Beyond,” 242nd ECS Meeting, Atlanta, GA, USA, Oct. 2022
  103. Guan-Hua Chen, Yifan Xing, Zefu Zhao, Yu-Rui Chen, and C. W. Liu, “Identification of Hf0.5Zr0.5O2 Orthorhombic vs Tetragonal Phase by X-Ray Absorption Spectroscopy,” National Synchrotron Radiation Research Center 28th Users' Meeting & Workshops, Hsinchu, Taiwan, Aug. 2022
  104. Ya-Jui Tsou, Wei-Jen Chen, Pang-Chun Liu, Wei-Yuan Chung, Chin-Yu Liu, and C. W. Liu, “Demonstration of BEOL Compatible 400oC-Robust p-SOT-MRAM with STT-Assisted Field-Free Switching and Composite Channel,” 2nd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2022
  105. Chung-En Tsai, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “8 Stacked Ge0.9Sn0.1 Ultrathin Bodies and Thick Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching,” 2nd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2022
  106. Yi-Chun Liu, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “Highly Stacked GeSi nGAAFETs by CVD Epitaxy and Wet Etching,” 2nd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2022
  107. Chien-Te Tu, Wan-Hsuan Hsieh, Bo-Wei Huang, and C. W. Liu, “Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching,” 2nd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2022
  108. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Song-Ling Li, Ming-Xuan Lee, Yu-Ciao Chen, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Electrical Properties and Reliability Improvement of Amorphous InGaZnO Thin Film Transistors with Double Active Layers,” 2nd Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2022
  109. Wan-Hsuan Hsieh, Yi-Chun Liu, Chung-En Tsai, and C. W. Liu, “Diffusion and Segregation in Highly Stacked Ge0.9Sn0.1/Ge:B and Ge0.95Si0.05/Ge:P Epilayers,” 241st ECS Meeting, Vancouver, BC, Canada, May 2022
  110. Wan-Hsuan Hsieh, Chun-Yi Cheng, Yi-Chun Liu, Chung-En Tsai, and C. W. Liu, “Recovery of Boron Activation and Epitaxial Breakdown in Heavily B-doped Ge Epilayers by In-situ CVD Doping,” European Materials Research Society (E-MRS) Spring Meeting, May 2022
  111. Hsin-Cheng Lin, Tao Chou, Kung-Ying Chiu, Chia-Che Chung, Chia-Jung Tsen, and C. W. Liu, “RF Performance Optimization of Stacked Si Nanosheet nFETs,” 2022 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2022
  112. Tao Chou, Chia-Che Chung, Hsin-Cheng Lin, and C. W. Liu, “Cell Stability and Write Improvement of 2T (Footprint) Stacked SRAM,” 2022 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2022
  113. Chun-Yi Cheng, Wan-Hsuan Hsieh, Bo-Wei Huang, Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Shee-Jier Chueh, Guan-Hua Chen, and C. W. Liu, “6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels by Wet Etching,” 2022 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2022
  114. Chung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, and C. W. Liu, “Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies,” Symposia on VLSI Technology and Circuits (VLSI), 2022
  115. H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.-P. Chuu, Y.-W. Chen, X.W. Zhang, C. W. Liu, Tahui Wang, C.-C. Wang, M.-H. Lee, M.-F. Chang, C.-S. Chang, and T.C. Chen, “Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array,” Symposia on VLSI Technology and Circuits (VLSI), 2022
  116. Yi-Chun Liu, Chun-Yi Cheng, Wan-Hsuan Hsieh, Bo-Wei Huang, Chien-Te Tu, and C. W. Liu, “Highly Stacked Ge0.95Si0.05 Nanowire nFETs Featuring High ION=140μA (6500μA/μm) at VOV=VDS=0.5V by Low Temperature Epitaxy and Wet Etching,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022), 2022
  117. Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Engineering Hf0.5Zr0.5O2 Ferroelectricity with Amorphous WOx Bottom Electrodes Achieving High Remnant Polarization,,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022), 2022
  118. Yu-Rui Chen, Zefu Zhao, Yun-Wen Chen, Yifan Xing, Yuxuan Lin, Guan-Hua Chen, and C. W. Liu, “Optimizing Oxygen Vacancy and Interface Energy Achieving High Remnant Polarization and Dielectric Constants of Respective Hf0.5Zr0.5O2 Superlattice and Alloy Structure,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022), 2022
  119. Yun-Wen Chen, Yu-Rui Chen, Zefu Zhao, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Enhanced Ferroelectricity in Hf0.5Zr0.5O2 Thin Film with Amorphous Underlayer,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022, 2022
  120. K.-Y. Hsiang, Y.-C. Chen, F.-S. Chang, C.-Y. Lin, C.-Y. Liao, Z.-F. Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, H.-C. Tseng, P.-H. Chen, J.-H. Tsai, M. H. Liao, T.-H. Hou, C. W. Liu, P.-T. Huang, P. Su, and M. H. Lee, “Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance,” International Electron Devices Meeting (IEDM), 2022
  121. C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu, S. Maikap, and M. H. Lee,, “Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM,” International Electron Devices Meeting (IEDM), 2022
  122. Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, and C. W. Liu, “First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation,” International Electron Devices Meeting (IEDM), pp. 479-482, 2022
  123. Wan-Hsuan Hsieh, Shih-Ya Lin, and C. W. Liu, “Thermal Stability of Epitaxial GeSn Layers on Ge-buffered Si by CVD,” 52nd IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, Dec. 2021
  124. Shih-Ya Lin, Wan-Hsuan Hsieh, and C. W. Liu, “A High ION/IOFF Ratio of 5.3x102 in Ge0.85Sn0.15 n+/p Junctions by Phosphorus Ion Implantation and Microwave Annealing,” 52nd IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, Dec. 2021
  125. Jih-Chao Chiu, Song-Ling Li, Ming-Xuan Lee, and C. W. Liu, “Performance Improvement of Amorphous InGaZnO Thin Film Transistors Using Double-layer Structure,” 2021 International Electron Devices and Materials Symposium (IEDMS), Tainan City, Taiwan, Nov. 2021
  126. S35. Shih-Ya Lin, Hsiao-Hsuan Liu, Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu, “Distinct Photoresponse from Floating Channels and Parasitic Channel of Vertically Stacked GeSi pGAAFETs and GeSn nGAAFETs,” 2021 International Electron Devices and Materials Symposium (IEDMS), Tainan City, Taiwan, Nov. 2021
  127. Chien-Te Tu, Chung-En Tsai, Yi-Chun Liu, Chun-Yi Cheng, Jyun-Yan Chen, and C. W. Liu, “Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets with High ION Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch,” 1st Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2021
  128. Yi-Chun Liu, Chien-Te Tu, Jyun-Yan Chen, and C. W. Liu, “2-Stacked Ge0.85Si0.15 nGAAFETs above a Si Channel with Enhanced Ion by Ge0.85Si0.15 Channels and Low SS of 76 mV/dec by Si Channel,” 1st Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2021
  129. Ya-Jui Tsou, Wei-Jen Chen, Huan-Chi Shih, Pang-Chun Liu, and C. W. Liu, “Strong Synthetic Antiferromagnetic Coupling and Low Damping Constant of Perpendicular Magnetic Tunnel Junctions for High-Density STT-MRAM,” 1st Symposium on Nano-Device Circuits and Technologies (SNDCT), Hsinchu, Taiwan, May 2021
  130. Song-Ling Li, Ming-Xuan Li, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Double-Layer Amorphous InGaZnO Thin Film Transistors with High Mobility and High Reliability,” 2021 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Apr. 2021
  131. H.L. Chiang, J.F. Wang, T.C. Chen, T.W. Chiang, C. Bair, C.Y. Tan, L.J. Huang, H.W. Yang, J.H. Chuang, H.Y. Lee, K. Chiang, K.H. Sheng, Y.J. Lee, R. Wang, C. W. Liu, T. Wang, X. Bao, E. Wang, J. Cai, C.T. Lin, H. Chuang, H.S.P. Wong, M.F. Chang, “Cold MRAM as a Density Booster for Embedded NVM in Advanced Technology,” Symposia on VLSI Technology and Circuits (VLSI), 2021
  132. Y-J Tsou, K-S Li, J-M Shieh, W-J Chen, H-C Chen, Y-J Chen, C-L Hsu, Y-M Huang, F-K Hsueh, W-H Huang, W-K Yeh, H-C Shih, P-C Liu, C. W. Liu, Y-S Yen, C-H Lai, J-H Wei, Denny D. Tang, and Jack Y-C Sun,, “First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels,” Symposia on VLSI Technology and Circuits (VLSI), 2021
  133. Chung-En Tsai, Yu-Rui Chen, Chien-Te Tu, Yi-Chun Liu, Jyun-Yan Chen, and C. W. Liu, “First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 °C,” Symposia on VLSI Technology and Circuits (VLSI), 2021
  134. Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Yu-Rui Chen, Jyun-Yan Chen, Sun-Rong Jan, Bo-Wei Huang, Shee-Jier Chueh, Chia-Jung Tsen, and C. W. Liu, “First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching,” Symposia on VLSI Technology and Circuits (VLSI), 2021
  135. Wei-Jen Chen, Ya-Jui Tsou, Huan-Chi Shih, Pang-Chun Liu, and C. W. Liu, “Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation,” International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021
  136. Chien-Te Tu, Bo-Wei Huang, Chung-En Tsai, Yi-Chun Liu, and C. W. Liu, “GeSn/GeSi Stacked Channel Transistors,” International Conference on Solid State Devices and Materials (SSDM), 2021
  137. Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Bo-Wei Huang, Sun-Rong Jan, Yu-Rui Chen, Jyun-Yan Chen, Shee-Jier Chueh, Chun-Yi Cheng, Chia-Jung Tsen, Yichen Ma, and C. W. Liu, “Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry Etching,” International Electron Devices Meeting (IEDM), pp. 569-57, 2021
  138. Haoran He, Di Wu, Ya-Jui Tsou, Yao-Min Huang, Kai-Shin Li, C. W. Liu, Albert Lee, and Kang L. Wang, “Efficient Voltage-Controlled Magnetic Anisotropy in Wafer-Scale Magnetic Tunneling Junction,” IEDM MRAM Poster, 2021
  139. Chia-Chun Yen, Chun-Hung Yeh, Song-Ling Li, Yu-Chieh Liu, and C. W. Liu, “Reliability of Amorphous IGZO TFTs with Different Oxygen Flow,” International Electron Devices and Materials Symposium (IEDMS 2020), Taoyuan City, Taiwan, Oct. 2020
  140. Chia-Chun Yen, Chieh Lo, Yu-Chieh Liu, Chun-Hung Yeh and C. W. Liu, “Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors,” PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), Honolulu, Hawaii, Oct. 2020
  141. Chia-Che Chung, Hsin-Cheng Lin, H. H. Lin, Y. H. Huang, M.-T. Yang, and C. W. Liu, “Thermal Simulation of FinFET Circuit,” The 31st VLSI Design/CAD Symposium (VLSI/CAD), Aug. 2020
  142. C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Yi-Chun Liu and Hung-Yu Ye, “Stacked high mobility channel transistors,” China Semiconductor Technology International Conference (CSTIC) 2020, Shanghai, China (Virtual Confere, Jul. 2020
  143. Chia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Chun-Hung Yeh and C. W. Liu, “Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers,” 78th Device Research Conference (DRC), Columbus, Ohio, USA (Virtual Conference), Jun. 2020
  144. Chung-En Tsai, Chih-Hsiung Huang, Yu-Rui Chen, Chien-Te Tu, Yu-Shiang Huang, and C. W. Liu, “600 meV Effective Work Function Tuning by Sputtered WNx Films,” 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
  145. Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu, “Infrared Response of Stacked GeSn Transistors,” 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
  146. Sheng-Ting Fan, Yun-Wen Chen, Pin-Shiang Chen, and C. W. Liu, “Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2,” 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
  147. C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Yi-Chun Liu and Hung-Yu Ye, “Stacked high mobility channel transistors,” China Semiconductor Technology International Conference (CSTIC) 2020, Shanghai, China, Mar. 2020
  148. Fang-Liang Lu, Yi-Chun Liu, Chung-En Tsai, Hung-Yu Ye, and C. W. Li, “Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD Doping,” Symposia on VLSI Technology and Circuits (VLSI), 2020
  149. Chia-Che Chung, Hsin-Cheng Lin, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry,,” Symposia on VLSI Technology and Circuits (VLSI), 2020
  150. Yu-Shiang Huang, Fang-Liang Lu, Chien-Te Tu, Jyun-Yan Chen, Chung-En Tsai, Hung-Yu Ye, Yi-Chun Liu and C. W. Liu, “First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped Channels,” Symposia on VLSI Technology and Circuits (VLSI), 2020
  151. Yu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Jyun-Yan Chen, Hung-Yu Ye, Fang-Liang Lu, and C. W. Liu, “First Demonstration of Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets with Record ION=73A at VOV=VDS= -0.5V and Low Noise Using Double Ge0.95Sn0.05 Caps, Dry Etch, Low Channel Doping, and High S/D Doping,” International Electron Devices Meeting (IEDM), pp. 23-26, 2020
  152. Min-Hung Lee, Kuan-Ting Chen, Chun-Yu Liao, Guo-Yu Siang, Chieh Lo, Hong-Yu Chen, Yi-Ju Tseng, Chung-Yu Chueh, Ching Chang, Yen-Yun Lin, Yu-Jun Yang, F-C Hsieh, Shu-Tong Chang, Ming-Han Liao, Kai-Shin Li, and C. W. Liu, “Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs,” International Electron Devices Meeting (IEDM) 2019, p.23-6, San Francisco, USA, Dec. 2019
  153. Jih-Chao Chiu, Ya-Jui Tsou, Huan-Chi Shih, and C. W. Liu, “Write Error Rate Prediction of STT-pMTJ Considering Process Variations and Thermal Fluctuations,” IEDM MRAM Poster, San Francisco, California, USA, Dec. 2019
  154. Ya-Jui Tsou, Chia-Che Chung, Jih-Chao Chiu, Huan-Chi Shih, and C. W. Liu, “Thermal and Reliability Modeling of FinFET-Driven STT-pMTJ Array Considering Mutual Coupling, 3D Heat Flow, and BEOL Effects,” IEDM MRAM Poster, San Francisco, California, USA, Dec. 2019
  155. Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, Hsiao-Hsuan Liu, Chung-Yi Lin, Yi-Chun Liu, and C. W. Liu, “First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 A at VOV=VDS=0.5V and Record Gm,max(S/m)/SSSAT(mV/dec) = 8.3 at VDS=0.5V,” International Electron Devices Meeting (IEDM) 2019, p.29-3, San Francisco, USA, Dec. 2019
  156. Yu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Hung-Yu Ye, Yi-Chun Liu, Fang-Liang Lu, and C. W. Liu, “First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58A at VOV=VDS= -0.5V, Record Gm,max of 172S at VDS= -0.5V, and Low Noise,” International Electron Devices Meeting (IEDM) 2019, p.29-5, San Francisco, USA, Dec. 2019
  157. Chung-En Tsai, Chih-Hsiung Huang, Yu-Rui Chen, Yi-Chun Liu, and C. W. Liu, “Effective Work Function Tuning of Stacked WNx Films by Sputtering,” 50th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 2019
  158. C. W. Liu, Yi-Chun Liu, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye, “Vertical Stacked High Mobility Channel Transistor,” International Workshop on the Physics of Semiconductor Devices, Kolkata, India, Dec. 2019
  159. C. W. Liu, Chung-En Tsai, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye, “GeSn CVD epitaxy and transistors,” 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, Nov. 2019
  160. Yu-Chieh Liu, An-Hung Tai, Chia-Chun Yen, Chun-Hung Yeh, and C. W. Liu, “Mobility and PBTI Enhancement of Double-layer Thin Film Transistors with Standard and High-resistance a-IGZO,” International Electron Devices and Materials Symposium (IEDMS 2019), Linkou, New Taipei City, Taiwan, Oct. 2019
  161. C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, “Vertically stacked n channel and p channel transistors,” Electrochemical Society Fall meeting 2019, Atlanta, Georgia, USA, Oct. 2019
  162. Chung-En Tsai, Fang-Liang Lu, Shih-Ya Lin, and C. W. Liu, “Temperature Effects in In-situ B-doped Epi-GeSn Layers on Si by CVD,” 2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA, Jun. 2019
  163. Hung-Yu Ye and C. W. Liu, “Scattering Mechanisms in High Electron Mobility Si/SiGe Quantum Well nFETs,” 2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA, Jun. 2019
  164. C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, “Vertically stacked GeSi/GeSn channel transistors,” 2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA, Jun. 2019
  165. Fang-Liang Lu, Chung-En Tsai, Chih-Hsiung Huang, Hung-Yu Ye, Shih-Ya Lin, C. W. Liu, “Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD With Low Thermal Budget (≤400℃) and Without Ga,” 2019 Symposia on VLSI Technology and Circuits, p. T14-2, Kyoto, Japan, Jun. 2019
  166. Chia-Che Chung and C. W. Liu, “FinFET Thermal Modeling and Circuit Thermal Simulation,” JST-MOST Joint Workshop, Jun. 2019
  167. Yu-Shiang Huang, Hung-Yu Ye, Fang-Liang Lu, Yi-Chun Liu, Chien-Te Tu, Chung-Yi Lin, Shih-Ya Lin, Sun-Rong Jan, C. W. Liu, “First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3A at VOV=VDS=-0.5V, Gm of 50.2S at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching,” 2019 Symposia on VLSI Technology and Circuits, p.T14-3, Kyoto, Japan, Jun. 2019
  168. Emmanuele Galluccio, Gioele Mirabelli, Dan O’Connell, Jessica Anne Doherty, Nikolay Petkov, Justin D. Holmes, Shih-Ya Lin, Fang-Liang Lu, C. W. Liu, and Ray Duffy, “Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08,” 5th joint EUROSOI – ULIS 2019 Conference, Grenoble, France, Apr. 2019
  169. Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, Ya-Jui Tsou, Yi-Chun Liu, Chien-Te Tu, and C. W. Liu, “Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and Ion/Ioff=1.2E7,” 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2019
  170. Ya-Jui Tsou, Zong-You Luo, Chia-Che Chung, and C. W. Liu, “Thermal Modeling of FinFET-Driven Spin-Orbit Torque MRAM Considering Thermal Coupling and BEOL Effects,” IEDM MRAM workshop, San Francisco, California, Dec. 2018
  171. Zong-You Luo, Ya-Jui Tsou, and C. W. Liu, “Field-Free Spin-Orbit Torque Switching of pMTJ Utilizing Voltage-Controlled Magnetic Anisotropy and STT,” IEDM MRAM workshop, San Francisco, California, Dec. 2018
  172. M. H. Lee, K.-T. Chen, C.-Y. Liao, S.-S. Gu, G.-Y. Siang, Y.-C. Chou, H.-Y. Chen, J. Le, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, P.-G. Chen, M. Tang, Y.-D. Lin, H.-Y. Lee, K.-S. Li, and C. W. Liu, “Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs,” IEEE International Electron Devices Meeting (IEDM), San Francisco, California, Dec. 2018
  173. Fang-Liang Lu, Chung-En Tsai, Shih-Ya Lin, and C. W. Liu, “In-situ B-doped Epi-GeSn Layers on Ge-buffered Si by Chemical Vapor Deposition with High Activation (4.9x1020cm-3), High Sn Content (14%), and High Growth Rate Enhancement (24x),” 49th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2018
  174. Hung-Yu Ye, Chia-Che Chung, and C. W. Liu, “Electron Mobility Enhancement by Tensile Strain in Germanium Nanowire NFETs considering surface roughness, channel dopant charge, interface charge, and phonon scattering,” 49th IEEE Semiconductor Interface Specialists Conference(SISC), San Diego, CA, Dec. 2018
  175. Chia-Chun Yen, An-Hung Tai, and C. W. Liu, “Quantitative Analysis of Interface Quality in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistors,” International Electron Devices and Materials Symposium (IEDMS 2018), Keelung, Taiwan, Nov. 2018
  176. (invited) C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye, “Ge/GeSn processes and transistor applications,” Americas International Meeting on Electrochemistry and Solid State Science (AiMES), Cancun, Mexico, Sept. 2018
  177. Jhih-Yang Yan, Chia-Che Chung, Sun-Rong Jan, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Comprehensive Thermal SPICE Modeling of FinFETs and BEOL with Layout Flexibility Considering Frequency Dependent Thermal Time Constant, 3D Heat Flows, Boundary/Alloy Scattering, and Interfacial Thermal Resistance with Circuit Level Reliability Evaluation,” Symposium on VLSI Technology (VLSI-Technology), Honolulu , Hawaii, Jun. 2018
  178. (invited) C. W. Liu, “Innovation enabling the semiconductor roadmap (半導體的創新之路),” 2018 ACS Industrial Forum: Semiconductor (2018 ACS 產業論壇-根植台灣：半導體產業的串連與革新), Hsinchu, Taiwan, Jun. 2018
  179. Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Dopant Effects in Epitaxial GeSn Layers on Si by CVD,” 1st Joint ISTDM / ICSI 2018 Conference, Potsdam (Berlin), Germany, May 2018
  180. Chih-Hsiung Huang, Da-Zhi Chang, and C. W. Liu, “Annealing Effects on Al2O3/GeOx/Ge Stack with Al and Pt Electrodes,” 1st Joint ISTDM / ICSI 2018 Conference, Potsdam (Berlin), Germany, May 2018
  181. Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, Huang-Siang Lan, C. W. Liu, “Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence,” 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2018
  182. Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, and C. W. Liu, “BEOL TDDB Reliability Modeling and Lifetime Prediction Using Critical Energy to Breakdown,” IEEE International Reliability Physics Symposium, Burlingame, CA, Mar. 2018
  183. Matthew Freeman, Tzu-Ming Lu, Yen Chuang, Jiun-Yun Li, C. W. Liu, Jeremy Curtis, and Lloyd Engel, “Microwave Spectroscopy of Resistive Film Gated Higfets and Mosfets,” APS March Meeting, Los Angeles, CA, Mar. 2018
  184. 19. M. H. Lee, P.-G. Chen, S.-T. Fan, Y.-C. Chou, C.-Y. Kuo, C.-H. Tang, H.-H. Chen, S.-S. Gu, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, C.-Y. Liao, K.-T. Chen, S. T. Chang, M.-H. Liao, K.-S. Li, and C. W. Liu, “Ferroelectric Al:HfO2 Negative Capacitance FETs,” International Electron Devices Meeting (IEDM), p.565-568, San Francisco, Dec. 2017
  185. Chung-Yi Lin, H.-S Lan, and C. W. Liu, “Photoluminescence and electroluminescence of strained GeSn quantum wells,” 48th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2017
  186. Fang-Liang Lu, Chung-En Tsai, Pin-Shiang Chen, and C. W. Liu, “Doping Effects on Sn Loss in Epi-GeSn on Si by CVD,” 48th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2017
  187. Yu-Shiang Huang, Fang-Liang Lu, Ya-Jui Tsou, Chung-En Tsai, Chung-Yi Lin, Chih-Hao Huang, and C. W. Liu, “First Vertically Stacked GeSn Nanowire pGAAFETs with Ion=1850mA/mm (VOV=VDS=-1V) on Si by GeSn/Ge CVD Epitaxial Growth and Optimum Selective Etching,” International Electron Devices Meeting (IEDM), p.832-835, San Francisco, Dec. 2017
  188. (invited) C. W. Liu, I-H. Wong, F.-L. Lu, and Y.-S. Huang, “Epitaxial Ge/GeSn high mobility channel transistors,” 232nd Meeting of Electrochemical Society, National Harbor, MD, Oct. 2017
  189. Chia-Chun Yen, Zheng-Lun Feng, Chung-Sung Liao, and C. W. Liu, “Effects of Oxygen Flow Rate on the Reliability of Dual Channel Amorphous InGaZnO Thin Film Transistors,” International Electron Devices and Materials Symposium (IEDMS 2017), Hsinchu, Taiwan, Sept. 2017
  190. Chia-Chun Yen, Zheng-Lun Feng, and C. W. Liu, “Reliability Study of Amorphous InGaZnO Thin-film Transistors,” The 6th International Symposium on Next-Generation Electronics (ISNE 2017), Keelung, Taiwan, May 2017
  191. Fang-Liang Lu, Chung-En Tsai, Shih-Ya Lin, Chih-Chiang Chang, and C. W. Liu, “In-situ P-doped and B-doped epi-GeSn on thin Ge buffer layers on Si with low contact resistivity of 1.1x10-6 (GeSn:P) and 1.9x10-8 (GeSn:B) Ω-cm2,” 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May 2017
  192. Meng-Chin Lee, Chun-Ti Lu, C. W. Liu, “Simulation of Interdigitated Back Contact Silicon Heterojunction Solar Cells,” 24th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, Apr. 2017
  193. (invited) C. W. Liu, Fang-Liang Lu, Yu-Shiang Huang, I-Hsieh Wong, “High Performance Ge and GeSn Epi Channels,” materials research society (MRS) spring meeting & exhibit, Phoenix, Arizona, Apr. 2017
  194. M. H. Lee, S.-T. Fan , C.-H. Tang , P.-G. Chen, Y.-C. Chou , H.-H. Chen , J.-Y. Kuo , M.-J. Xie, S.-N. Liu , M.-H. Liao , C.-A. Jong , K.-S. Li , M.-C. Chen , and C. W. Liu, “Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs,” International Electron Devices Meeting (IEDM), p.306-309, San Francisco, Dec. 2016
  195. I-Hsieh Wong, Fang-Liang Lu, Shih-Hsien Huang, Hung-Yu Ye, Chun-Ti Lu, Jhih-Yang Yan, Yu-Cheng Shen, Yu-Jiun Peng, Huang-Siang Lan, and C. W. Liu, “High Performance Ge Junctionless Gate-all-around NFETs with Simultaneous Ion =1235 mA/mm at VOV=VDS=1V, SS=95 mV/dec, high Ion/Ioff=2E6, and Reduced Noise Power Density using S/D Dopant Recovery by Selective Laser Annealing,” International Electron Devices Meeting (IEDM), p.842-845, San Francisco, Dec. 2016
  196. Yu-Shiang Huang, Chih-Hsiung Huang, Fang-Liang Lu, Chung-Yi Lin, Hung-Yu Ye,I-Hsieh Wong, Sun-Rong Jan, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “Record High Mobility (428cm2/V-s) of CVD-grown Ge/Strained Ge0.91Sn0.09 /Ge Quantum Well p-MOSFETs,” International Electron Devices Meeting (IEDM), p.822-825, San Francisco, Dec. 2016
  197. Jhih-Yang Yan, Sun-Rong Jan, Yu-Jiun Peng, H. H. Lin, W. K. Wan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang, and C. W. Liu, “Thermal Resistance Modeling of Back-end Interconnect and Intrinsic FinFETs, and Transient Simulation of Inverters with Capacitive Loading Effects,” International Electron Devices Meeting (IEDM), p.898-901, San Francisco, Dec. 2016
  198. Chung-Yi Lin, Fang-Liang Lu, C. W. Liu, Yi-Chiau Huang, Hua Chung, and Chorng-Ping Chang, “Passivation and photo/electro luminescence of Ge/GeSn/Ge quantum wells,” 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2016
  199. Fang-Liang Lu, I-Hsieh Wong, Shih-Hsien Huang, and C. W. Liu, “Tensile strain recovery and dopant re-activation using laser annealing,” 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2016
  200. Chia-Chun Yen, Zheng-Lun Feng, C. W. Liu, “Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO Thin-film Transistors by Gate Control,” International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, Taiwan, Nov. 2016
  201. (invited) C. W. Liu, Jhih-Yang Yan, and Sun-Rong Jan, “Modeling and Simulation of TSV Induced Keep-out Zone Using Silicon Data,” 13th International Conference on Solid-State Integrated Circuit & Technology (ICSICT 2016), Hangzhou, China, Oct. 2016
  202. (invited) C. W. Liu, F.-L. Lu, S.-H. Huang, “Heavily Phosphorus-doped Si and Ge by Chemical Vapor Deposition,” 21st International Conference on Ion Implantation Technology, Tainan, Taiwan, Sept. 2016
  203. F. -L. Lu, S. -H. Huang, and C. W. Liu, “Heavily Phosphorus-doped Si0.1Ge0.9 and Ge on Si with Low Contact Resistivity by Chemical Vapor Deposition and Laser Annealing,” 8th International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jun. 2016
  204. S.-H. Huang, F.-L. Lu, S. V. Kravchenko, and C. W. Liu, “Record High Electron Mobility of 2.4 × 106 cm2/V s in Strained Si by Ultra-low Background Doping,” 8th International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jun. 2016
  205. Yu-Shiang Huang, Chih-Hao Huang, Chih-Hsiung Huang, Fang-Liang Lu, Da-Zhi Chang, Chung-Yi Lin, I-Hsieh Wong, Sun-Rong Jan, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs,” 22th IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, Jun. 2016
  206. Chih-Hsiung Huang, Sheng-Ting Fan, Pin-Shiang Chen, Raman Sankar, F. C. Chou and C. W. Liu, “Atomically Flat Metal-Insulator-Metal Capacitors with Enhanced Linearity,” 22th IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, Jun. 2016
  207. X. Zhu, T.-H. Cheng, and C. W. Liu, “Strain-enhanced Inhomogeneity Effects on CIGS Solar Modules,” The 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, May 2016
  208. D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” APS March Meeting, Baltimore, Maryland, Mar. 2016
  209. T. M. Lu, D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, and C. W. Liu, “Electron bilayers in an undoped Si/SiGe double-quantum-well heterostructure,” APS March Meeting, Baltimore, Maryland, Mar. 2016
  210. Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, C. W. Liu, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, and M.-T. Yang, “Compact Modeling and Simulation of TSV with Experimental Verification,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016
  211. S. -H. Huang, F. -L. Lu, and C. W. Liu, “Low Contact Resistivity (1.5×10-8 Ω-cm2) of Phosphorus-doped Ge by In-situ Chemical Vapor Deposition Doping and Laser Annealing,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016
  212. Chih-Hsiung Huang, Yu-Shiang Huang Tzu-Yao Lin, and C. W. Liu, “Reduced Interface Trap Density by Al Capping on Al2O3 Stack on Ge,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2015
  213. Yu-Shiang Huang, Chih-Hsiung Huang, Chung-Yi Lin and C. W. Liu, “Enhanced performance of Y-GeO2/Ge Gate Dielectric by O2 Post-deposition Annealing and Al Capping,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2015
  214. Chung-Yi Lin, Shih-Hsien Huang, Chun-Ti Lu, C. W. Liu, ,Yi-Chiau Huang, Hua Chung, and Chorng-Ping Chang, “Surface Passivation of Ge/GeSn/Ge Using Atomic Layer Deposited SiO2 and Al2O3,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2015
  215. Xiaobo Zhu and C. W. Liu, “Effects of fluctuation on Cu(In,Ga)Se2 solar modules using 3D simulation,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25), Busan, Korea, Nov. 2015
  216. Chun-Ti Lu, Wenchao Wu and C. W. Liu, “3D Simulation and Analysis of Crystalline Silicon Solar Cell-to-Module Optical Gain,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25), Busan, Korea, Nov. 2015
  217. C.W. Liu, I.-H. Wong, S.-H. Huang, C.-H. Huang and S.-H. Hsu, “Advanced Germanium Channel Transistors,” 11th International Conference on ASIC (ASICON 2015), Chengdu, China, Nov. 2015
  218. C. W. Liu, Shih-Hsien Huang, and I-Hsieh Wong, “High mobility Si and Ge,” SemiconNano, Hsinchu, Taiwan, Sept. 2015
  219. Fang-Liang Lu, Shih-Hsien Huang, C. W. Liu, “High electrically active phosphorus concentration and low contact resistance of Ge on Si by in-situ doping and laser annealing,” 22nd Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, Sept. 2015
  220. C. W. Liu, I-Hsieh Wong, Shih-Hsien Huang and Chih-Hsiung Huang, “3D Ge nanowire transistors,” IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, Alaska, Sept. 2015
  221. C. W. Liu, I-Hsieh Wong, Yen-Ting Chen and Shu-Han Hsu, “High Mobility Ge Channel Transistors,” Advanced Materials World Congress, Stockholm, Sweden, Aug. 2015
  222. I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Tai-Cheng Shieh and C. W. Liu, “Junctionless Gate-all-around pFETs on Si with In-situ Doped Ge Channel,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2015
  223. Shi Luo, Eason Lin, Hai Xiao, Jiun-Haw Lee, C. W. Liu, William Goddard, and Julia R. Greer, “Effects of Trioctylphosphine Sulfide Passivation on Na Transport within CuInSe2Thin Films,” MRS spring meeting, San Francisco, 2015
  224. C. W. Liu, I-Hsieh Wong, Yen-Ting Chen, Wen-Hsien Tu, Shih-Hsien Huang, and Shu-Han Hsu, “Ge Gate-All-Around FETs on Si,” IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (IEEE-ICSICT), Guilin, China, Oct. 2014
  225. C. W. Liu, Y.-T Chen, and S.-H Hsu, “Gate-all-around Ge FETs,” 226th Meeting of Electrochemical Society, Cancun, Mexico, Oct. 2014
  226. C. W. Liu, “High Mobility Ge Channel Transistors,” ISMEN (International Symposium on Materials for Enabling Nanodevices), Tainan, Taiwan, Sept. 2014
  227. C. W. Liu, Yen-Yu Chen, and Wen-Hsien Tu, “SiGe/Ge epi films with photonic and electrical applications,” Science & Applications of Thin Films, Conference & Exhibition (SATF 2014), Turkey, Sept. 2014
  228. Yen-Yu Chen, Chia-Chun Yen, Yi-Hsin Nien, Wen-Wei Hsu, Qing-Qi Chen, and C. W. Liu, “Reabsorption effects on direct band gap emission from germanium light emitting diodes,” The 11th International Conference on Group IV Photonics, Paris, Aug. 2014
  229. Yen-Yu Chen, T.-Y. Chang, C.-C. Yen, and C. W. Liu, “Enhanced light extraction of Ge by GeO2 micro hemispheres,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, Jun. 2014
  230. Wen-Ling Lu, J.-S. Liu and C. W. Liu, “Simulated Analysis of Interdigitated Back Contact Solar Cells,” 21st Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 2014
  231. Chun-Ti Lu, X. Zhu and C. W. Liu, “Coupled optical and electrical simulations of Cu(In,Ga)Se2 solar cells,” 21st Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 2014
  232. Chun-Ti Lu, T.-M. Chao and C. W. Liu, “Excess carrier recombination in amorphous silicon solar cells due to deep texture,” 21st Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 2014
  233. I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, Huang-Siang Lan, and C. W. Liu, “In-situ Doped and Tensily Stained Ge Junctionless Gate-all-around nFETs on SOI Featuring Ion = 828 uA/um, Ion/Ioff ~ 1E5, DIBL= 16-54 mV/V, and 1.4X External Strain Enhancement,” International Electron Devices Meeting (IEDM), p.239-242, 2014
  234. Chun-Ti Lu, Qing-Qi Chen, and C. W. Liu, “Al2O3/TiO2 bilayers as passivation and antireflection coating on silicon,” 45th Semiconductor Interface Specialists Conference, 2014
  235. H.-S. Lan, and C. W. Liu, “Electron Ballistic Current Enhancement of Ge1-xSnx FinFETs,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014
  236. Hung-Chih Chang, Pin-Shiang Chen, Fu-Liang Yang, and C. W. Liu, “Strain Response of Monolayer MoS2 in The Ballistic Regime,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014
  237. Y. -T. Chen, H. -C. Chang, I. -S. Wong, C. -M. Lin, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “EUV Degradation of High Performance Ge MOSFETs,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2013
  238. Tsun-Hsin Wong, Carissa Eisler, Chris Chen, Jeff Bosco, Daisuke Ryuzaki, Wen-Wei Hsu, C.W. Liu, Chi-Feng Lin, Tien-Lung Chiu, Jiun-Haw Lee, Chuang-Chuang Tsai, and Harry A. Atwater, “Surface Passivation of CuInSe2 with Trioctylphosphine Sulfide,” MRS spring meeting 2013, 2013
  239. Jhih-Yang Yan, Pin-Shiang Chen, Jiun-Ian Pai, Wen-Wei Hsu and C. W. Liu, “The Incorporation of Electromagnetic Effects on Through Silicon Vias in TCAD Simulation,” International Semiconductor Device Research Symposium, 2013
  240. Pin-Shiang Chen, Hung-Chih Chang, Jhih-Yang Yan and C. W. Liu, “Strain Response of Monolayer MoS2 under Ballistic Limit,” International Semiconductor Device Research Symposium, 2013
  241. I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Chun-Liu Chu, Shu-Han Hsu and C. W. Liu, “High Performance Junctionless In-situ Doped Ge Gate-all-around PFETs on Si,” International Semiconductor Device Research Symposium, 2013
  242. Chih-Hsiung Huang, Cheng-Ming Lin, Hung-Chih Chang and C. W. Liu, “Post-Gate Fluorine Incorporation by CF4 Plasma on Very High  Tetragonal ZrO2/Ge Gate Stack with Ultrathin EOT of 0.4 nm,” 44th Semiconductor Interface Specialists Conference, 2013
  243. Ya-Shiun Wu ,Yen-Yu Chen , C.-H. Huang, and C. W. Liu, “High efficient N-type solar cells using ion implanted emitters and back surface field,” 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), 2013
  244. C. W. Liu, Hung-Chih Chang, Yen-Ting Chen, Wen-Hsien Tu, I-Hsieh Wong, Shu-Han Hsu, and Chun-Lin Chu, “3D Ge transistors,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Tainan, Taiwan, 2013
  245. Hung-Chih Chang, Pin-Shiang Chen, and C. W. Liu, “Tensile Strain Responses and Dielectric Effect on Monolayer MoS2,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Tainan, Taiwan, 2013
  246. Jheng-Sin Liu, Wen-Ling Lu, and C.W. Liu, “Three-dimensional simulation of metal grid effects on Si solar cells,” 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), 2013
  247. I-Hsieh Wong, Yen-Ting Chen, Huang-Jhih Ciou, Yu-Sheng Chen, Jhih-Yang Yan and C.W. Liu, “Mobility Strain Response and Low Temperature Characterization of Ge p-MOSFETs,” 71st Annual Device Research Conference, 2013
  248. Yen-Yu Chen, C.-H. Huang, W.-S. Ho, M.-H. Tsai, and C. W. Liu, “Fabrication and analysis of 18.2% efficient solar cell with co-activation of ion implanted emitter and back surface field,” 20th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, 2013
  249. H. -C. Chang, S.-H Hsu, C.-L Chu, W.-H Tu, Y.-T Chen, P.-J Sung, G.-Li Luo, and C. W. Liu, “Germanium Gate-All-Around FETs on SOI,” 222th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2012
  250. C. W. Liu, Hung-Chih Chang, Cheng-Ming Lin, and Yen-Ting Chen, “Planar and 3D Ge FETs,” 11th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Xi’an, China, Oct. 2012
  251. W.-S. Ho, M.-H. Tsai, Y.-Y. Chen, W.-W. Hsu , C.-L. Chu, Y.-Y. Chen, S.-W. Tan, and C. W. Liu, “Ion implanted boron emitter n-Si solar cells with wet oxide and Al2O3 passivation,” SuNEC 2012 - Sun New Energy Conference, Sicily, Italy, Sept. 2012
  252. Yu-Chun Yin, Hung-Chih Chang, and C.W.Liu, “Low Leakage Junctionless Vertical Pillar Transistor,” International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, Sept. 2012
  253. Wei Zheng, Zhe Chuan Feng, Ling-Yun Jang, Rui Sheng Zheng, Chih-Fang Huang, and C. W. Liu, “Angular dependence of X-ray absorption from 3C-SiC/Si,” 2nd Cross-Strait Synchrotron Radiation Research Symposium, Hsinchu, Taiwan, Aug. 2012
  254. Y. –Y. Chen, Y. –H. Nien, Y. –H. Chi, and C. W. Liu, “Reabsorption Effects on Ge Photoluminescence,” 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, California, Jun. 2012
  255. Wei Zheng, Rui Sheng Zheng, Hong Lei Wu, Fa Di Li, C. W. Liu and Zhe Chuan Feng, “Temperature Dependence of Raman Scattering from hexagonal AlN whisker,” Symposium on Nano Device Technology (SNDL), Hsinchu, Taiwan, Apr. 2012
  256. H.-C. Sun, J. Y. Chen, Y.-J. Yang, T.-M. Chao, W.-D. Chen, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “Enhanced recovery of light-induced degradation on the micromorph solar cells by reverse bias,” International Conference on Renewable Energies and Power Quality (ICREPQ'12), Santiago de Compostela, Spain, Mar. 2012
  257. C. W. Liu, H.-S. Lan, and Y.-T. Chen, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors and mobility strain response,” CSTIC, Shanghai, China, Mar. 2012
  258. Cheng-Ming Lin, Hung-Chih Chang, Yen-Ting Chen, I-Hsieh Wong, Huang-Siang Lan, Shih-Jan Luo, Jing-Yi Lin, Yi-Jen Tseng, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ~43, ~2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response,” International Electron Devices Meeting (IEDM), p.509-512, 2012
  259. Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen, Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels,” International Electron Devices Meeting (IEDM), p.525-528, 2012
  260. C.-H. Shen, J.-M. Shieh, T.-T. Wu, U.-P. Chiou, H.-C. Kuo, P. Yu, T.-C. Lu, Y.-L. Chueh, C.W. Liu, C. Hu, and F.-L. Yang, “Hybrid CIS/Si Near-IR Sensor and 16% PV Energy-Harvesting Technology,” International Electron Devices Meeting (IEDM), p.279-282, 2012
  261. Y. –Y. Chen, Y. –H. Nien, Y. –H. Chi, and C. W. Liu, “Reabsorption of Ge direct band emission,” 19th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, 2012
  262. C. W. Liu, “N-type Mono Si cells,” IEDMS, Taipei, Taiwan, Nov. 2011
  263. H. -C. Chang, S. -C. Lu, W. -C. Chang, T. -P. Chou, H. -S. Lan, C. -M. Lin, and C. W. Liu, “Theoretical and Experimental Demonstration of Electronic State of GeO2,” 220th Meeting of Electrochemical Society, Boston, Massachusetts, Oct. 2011
  264. Z. C. Feng, Y.-L. Tu, K.-Y. Lee, C. W. Liu, C.-C. Tin, Z. L. Li, C. R. Ding, and Z. R. Qiu, “Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si,” 2011 International Conference on Silicon Carbideand Related Materials (ICSCRM 2011), Cleveland, Ohio USA, Sept. 2011
  265. H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “A parameterized SPICE macromodel of resistive random access memory and circuit demonstration,” IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, Sept. 2011
  266. Wen.-Hsien Tu, C.-H Lee, and C.W.Liu, “Strained GeSi Layer Grown on (110) Silicon-On-Insulator,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug. 2011
  267. C. W. Liu, T. -H. Cheng, Y. –Y. Chen, S. -R. Jan, C. -Y. Chen, S. T. Chan, Y. –H. Nien, Yuji Yamamoto, and Bernd Tillack, “Direct and indirect radiative recombination from Ge,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug. 2011
  268. T. -H. Cheng , J. Y. Chen , W. W. Hsu , C. W. Liu, C. Y. Hsiao, and H. R. Tseng, “Defect Related Negative Temperature Coefficiency of Short Circuit Current of Cu(In,Ga)Se2 Solar Cells,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
  269. Y.-Y. Chen, Wei-Chiang Chang, S. T. Chan, and C. W. Liu, “Germanium oxide passivation for Ge absorber,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
  270. W. S. Ho, Y.-H. Huang, W.-W. Hsu, Y.-Y. Chen, Y.-Y. Chen, and C. W. Liu, “Ion Implanted Boron Emitter N-Silicon Solar Cells With Wet Oxide Passivation,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
  271. Y.-J. Yang, J. Y. Chen, H.-C. Sun, C. W. Liu, M.-H. Tseng, C.-C. Bi, and C.-H. Yeh, “Microcrystalline silicon solar cells with heterojunction structure,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
  272. C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan, “Photoluminescence and Electroluminescence from Ge,” symposium on Si-based materials and devices, Xiamen, China, May 2011
  273. W.-W. Hsu, J. Y. Chen, T. -H. Cheng, S. C. Lu, S.-T. Chan, W. S. Ho, and C. W. Liu, “Surface Passivation of Cu(In,Ga)Se2 by Atomic Layer Deposited Al2O3,” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May 2011
  274. 17. H.-C. Sun, J. Y. Chen, Y.-J. Yang, T.-M. Chao, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “applying reverse bias to recover the light-induced degradation of amorphous silicon germanium solar cells,” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May 2011
  275. H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “Physical mechanism of HfO2-based bipolar resistive random access memory,” 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2011
  276. C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan, “Enhancements of direct band gap transition from Ge,” 2011 Taiwan-USAF Nanoscience Workshop, Seattle, U.S.A, Apr. 2011
  277. W.-W. Hsu, C.-Y. Lai, W. S. Ho, and C. W. Liu, “Insulating Halos to Boost Planar CMOS Performance,” 18th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, Apr. 2011
  278. C. W Liu, “high mobility channels,” 2011 International Workshop on Exploratory Research for Semiconductor Devices and VLSI Packaging, Beijing, China, Mar. 2011
  279. C. W. Liu, “high mobility materials for technologies and physics,” 5th International Workshop on High k dielectrics on high carrier mobility semiconductors, Hsinchu, Taiwan, 2011
  280. Yu-Jen Hsiao, Ting-Jen Hsueh, Jia-Min Shieh, Yu-Ming Yeh, Chien-Chih Wang, Bau-Tong Dai, Wen-Wei Hsu, Jing-Yi Lin, Chang-Hong Shen, C. W. Liu, Chenming Hu and Fu-Liang Yang, “Bifacial CIGS (11% Efficiency)/Si Solar Cells by Cd-free and Sodium-free Green Process Integrated with CIGS TFTs,” International Electron Devices Meeting (IEDM), 2011
  281. Shu-Han Hsu, Chun-Lin Chu, Wen-Hsien Tu, Yen-Chun Fu, Po-Jung Sung, Hung-Chih Chang, Yen-Ting Chen, Li-Yaw Cho, Guang-Li Luo, William Hsu, C. W. Liu, Chenming Hu, and Fu-Liang Yang, Chenming Hu, and Fu-Liang Yang, “Nearly Defect-free Ge Gate-All-Around FETs on Si Substrates,” International Electron Devices Meeting (IEDM), 2011
  282. C. W. Liu, “High mobility for physics and technologies,” the III Nanotechnology International Forum, Moscow, Nov. 2010
  283. H.-C. Sun, W.-D. Chen, T. H. Cheng, Y.-J. Yang and C. W. Liu, “Recovery of light induced degradation of micromorph solar cells by reverse bias,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
  284. T. -H. Cheng , K.-L. Peng, C. -Y. Ko , C.-Y. Chen , S. T. Chan, and C. W. Liu, “Enhancements of Direct Band Radiative Recombination from Ge,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
  285. T. -H. Cheng , W. W. Hsu , C.Y. Huang, J.-A. Lu, J. Y. Chen, and C. W. Liu, “Photoluminescence Characterization and Passivation of CIGS Absorber,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
  286. C. -M. Lin, Y. -T. Chen, C.-H. Lee, H.-C. Chang, W. -C. Chang, and C. W. Liu, “Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
  287. S. -R. Jan, C. -H. Lee, T. -H. Cheng , Y. -Y. Chen, K. -L. Peng, S. -T. Chan, C. W. Liu, Y. Yamamoto, and B. Tillack, “Extrinsic effects of indirect radiative transition of Ge,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
  288. C. -H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu, “Surface Orientation Effects on SiGe Quantum Dots and Nanorings Formation,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
  289. W. S. Ho, Y.-Y. Chen, T.-H. Cheng, J.-Y. Chen, J.-A. Lu, P.-L. Huang, and C. W. Liu, “Thermal oxide, Al2O3 and amorphous-Si passivation layers on silicon,” 35th IEEE Photovoltaic Specialist Conference, Hawaiian Convention Center in Waikiki, Hawaii, Jun. 2010
  290. C. -H. Lee, W. -H. Tu, H. T. Chang, Y. -C. Fu, S. W. Lee, and C. W. Liu, “SiGe quantum dots and nanorings on Si(111),” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May 2010
  291. T. M. Lu, C. -H. Lee, D. C. Tsui, and C. W. Liu, “High mobility two-dimensional electron gas in strained Si,” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May 2010
  292. T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK,” March Meeting of The American Physical Society, Portland, Oregon, USA, Mar. 2010
  293. T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK,” March Meeting of the American Physical Society, Portland, Oregon, USA, Mar. 2010
  294. ., “Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films,” ECS Transactions - CSTIC 2010, Vol. 27, Silicon Technology for Electronic and Photovoltaic Applications, 2010
  295. Yen Chun Fu, William Hsu, Yen-Ting Chen, Huang-Siang Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” International Electron Devices Meeting (IEDM), 2010
  296. Y.-T. Chen, C.-F. Huang, H.-C. Sun, T.-Y. Wu, C.-Y. Ku, C. W. Liu, Y.-C. Hsu, and J.-S. Chen, “A Design of 1T Memory Cells Using Channel Traps for Long Data Retention Time,” 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2009
  297. H.-C. Chang, P.-S. Kuo, C.-Y. Peng, Y.-T. Chen, W.-Y. Chen, and C. W. Liu, “Optimization of A Saddle-like FinFET by Device Simulation for Sub-50nm DRAM Application,” 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2009
  298. T.-H. Cheng, C. -Y. Ko, C.-Y. Chen, K.-L. Peng, C. W. Hsu, P.K. Chiang, and C. W. Liu, “Luminescence from monolithic GaInP/GaInAs/Ge triple-junction solar cells,” 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, Nov. 2009
  299. W.S. Ho, J.-F. Liao, Y.-Y. Chen, C.-A. Lu, W.-D. Chen, W.-F. Tsai, C.-F. Ai, and C. W. Liu, “Passivation of solar cell by Plasma Immersion Ion Implantation,” 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, Nov. 2009
  300. C.-F. Huang, H.-C. Sun, P.-S. Kuo, Y.-T. Chen, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009), Suzhou, China, Jul. 2009
  301. C.-H. Lee, Y. -Y. Shen, Y. Y. Chen, H.-T. Chang, S. W. Lee, and C. W. Liu, “SiGe Quantum Dots and Quantum Rings on Si(110) by Ultra-High Vacuum Chemical Vapor Deposition,” ICSI-6, p. 43, Los Angeles, USA, May 2009
  302. P. S. Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation and thermal stability in thin SiGe films with an inserted Si1-yCy layer,” ICSI-6, p. 13, Los Angeles, USA, May 2009
  303. C.-H. Lin and C. W. Liu, “Relation between Currents and Positions of Delta-Doped Layers in SiGe QDIPs,” ICSI-6, p. 113, Los Angeles, USA, May 2009
  304. T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, C.-Y. Chen, and C. W. Liu, “Minority carrier lifetime measurement of monocrystalline silicon solar cell by temporal electroluminescence method,” ICSI-6, p. 125, Los Angeles, USA, May 2009
  305. C.-Y. Peng, Y.-H. Yang, C.-M. Lin, Y.-Y. Shen, M. H. Lee, and C. W. Liu, “The Process Strain Determination of Nickel Germanides by Raman Spectroscopy,” ICSI-6, p123, Los Angeles, USA, May 2009
  306. H. T. Chang, S. W. Lee, C.-H. Lee, S. L. Cheng, and C. W. Liu, “Ge redistribution of self-assembled Ge islands on Si (001) during annealing,” ICSI-6, p63, Los Angeles, USA, May 2009
  307. H.-L. Chang, H.-C. Chang, S.-C. Yang, H.-C. Tsai, H.-C. Li, and C. W. Liu, “Improved SPICE Macromodel of Phase Change Random Access Memory,” 2009 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), Hsinchu, Taiwan, Apr. 2009
  308. T. -H. Cheng, K.-L. Peng, C.Y. Huang, W. D. Chen, and C. W. Liu, “Characterization of CIGS solar cell absorber,” IPVSEE 2009, Beijin, China, 2009
  309. G.-L. Luo, S.-C. Huang, C.-T. Chung, Dawei Heh, C.-H. Chien, C.-C. Cheng, Y.-J. Lee, W.-F. Wu, C.-C. Hsu, M.-L. Kuo, J.-Y. Yao, M.-N. Chang, C.-W. Liu, C.-M. Hu, C.-Y. Chang, and F.-L. Yang, “A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage,” IEDM 2009, 2009
  310. Y.-Y. Chen, W.-S. Ho, C.-H. Lee, Y.-H. Yang, W.-D. Chen, C. W. Liu, “The Ge1-xSnx MOS Infrared Photodetector,” ICSI-6, p114, 2009
  311. H.-C. Sun, C.-F. Huang, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “A New NBTI Characterization Method on Polycrystalline Silicon Thin-Film Transistors,” 15th International Display Workshop (IDW), Vol. 2, pp. 659-662, Niigata, Japan, Dec. 2008
  312. C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 2008
  313. C.-H. Lee, C. M. Lin, Y. -Y. Sen, S. W. Lee P. Shushpannikov, R. V. Goldstein, and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 2008
  314. W. S. Ho, C.-H. Lin, P.-S. Kuo, W. W. Hsu, T.-H. Cheng, Y.-Y Chen and C. W. Liu, “Metal Oxide Semiconductor UV Sensor,” 7th IEEE Conference on Sensors, Lecce, Italy, Oct. 2008
  315. C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, K.-C. Lin, and J.-S. Chen, “Comprehensive Study of Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 2008
  316. C.-Y. Peng, Y.-H. Yang, C.-M. Lin,Y.-J. Yang, C.-F. Huang, and C. W. Liu, “Process Strain Induced by Nickel Germanide on (100) Ge Substrate,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 2008
  317. S. W. Lee, H. T. Chang, C. -H. Lee, C. A. Chueh, S. -L. Cheng, W. -W. Wu, C. W. Liu, “Vertical Self-Alignment of SiGe Nanolenses on Si (001),” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
  318. C.-H. Lee, C. M. Lin, S. W. Lee, P. Shushpannikov, R. V. Goldstein and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
  319. C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, Y.-H. Yang, C.-W. Lai, C. M. Lin and C. W. Liu, “Micro-Raman Studies on Nickel Germanides formed on (110) crystalline Ge,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
  320. C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
  321. S. W. Lee, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” 4th International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, Jul. 2008
  322. W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide Photodetector,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
  323. S.-W. Lee, H. T. Chang, C.A. Chueh, S. L. Cheng, C.-H. Lee, and C. W. Liu, “The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
  324. H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, “Crosstalk Reduction Technique Between Dual SiGe Power Amplifiers,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
  325. C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, and C. W. Liu, “Nickel Germanide Formation: Orientation and Temperature Effects,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
  326. Y.-J. Yang, M. H. Liao, C. W. Liu, Lingyen Yeh, T.-L. Lee, M.-S. Liang, “Superior n-MOSFET Performance by Optimal Stress Design,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2007
  327. C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, C.-W. Chao, and K.-C. Lin, “Comprehensive Study on Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2007
  328. T.-H. Cheng, C. T. Lee, M. H. Liao, P. -S. Kuo, T. A. Hung, and C. W. Liu, “Electrically pumped Ge Laser at room temperature,” International Electron Devices Meeting (IEDM), Washington D.C., Dec. 2007
  329. C.-H. Lee, C.-Y. Yu, C. M. Lin, H. Lin, W.-H. Chang, and C. W. Liu, “Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
  330. P.-S. Chen, S. W. Lee, M.-H. Lee, and C. W. Liu, “Formation of Relaxed SiGe on the buffer consisting of modified SiGe islands by Si Pre-mixing,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
  331. S. W. Lee, P.-S. Chen, M.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 and SiCH6 mediation by ultra-high vacuum chemical vapor deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
  332. P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, C. W. Liu, “Si/SiGe/Si Quantum well Schottky barrier diodes,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
  333. W.-S. Liao, S.-Y. Huang, T. Shih, and C. W. Liu, “Current and Speed Enhancements at 90nm Node through Package Strain,” International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 2007
  334. P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Novel Transport mechanism of SiGe dot MOS tunneling diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007
  335. S.-R. Jan, M. H. Liao, T.-H. Cheng, Y. Deng and C. W. Liu, “Blue Electroluminescence from Metal/Oxide/n-6H-SiC Tunneling Diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007
  336. T.-H. Cheng, C.-H. Lee, M. H. Liao, and C. W. Liu, “Electroluminescence from strained SiGe quantum dot light-emitting diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007
  337. C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” NanoSMat 2007, Algarve, Portugal, Jul. 2007
  338. C.-Y. Peng, M. H. Liao, C.-F. Huang, Y. J. Yang, S. T. Chang, and C. W. Liu, “Strain effects on MOS capacitors and Schottky diodes,” 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 2007
  339. Y.-J. Yang, S. T. Chang, and C. W. Liu, “Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime,” International Symposium VLSI Technology, System, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2007
  340. H.-L. Chang, P.-T. Lin, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Differential Power Combining Technique for General Power Amplifiers Using Lumped Component Network,” Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Dec. 2006
  341. (Invited) M. H. Liao, C.-H. Lin, C.-H. Lee, T.-H. Cheng, T.-H. Guo, and C. W. Liu, “Electroluminescence from SiGe based metal-oxide-semiconductor Tunneling Diodes,” 210th Meeting of Electrochemical Society, Mexico, Oct. 2006
  342. C.-H. Lin, C.-Y. Yu, M. H. Liao, C.-F. Huang, C.-J. Lee, C.-Y. Lee, and C. W. Liu, “The Process and Optoelectronic Characterization of Ge-on-Insulator,” 210th Meeting of Electrochemical Society, Mexico, Oct. 2006
  343. (Invited) C. W. Liu, and F. Yuan, “Mobility enhancement technologies,” 8th International Conference on Solid-state and Integrated Circuit Technology (ICSICT-06), Shanghai, China, Oct. 2006
  344. (Invited) C.-H. Lin can C. W. Liu, “MOS Si/Ge photodetectors,” Optoelectronic Devices: Physics, Fabrication, and Application III, SPIE Symposium, Boston, Oct. 2006
  345. M. H. Liao, S. T. Chang, P. S. Kuo, H.-T. Wu, C.-Y. Peng, and C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
  346. M. H. Liao, T.-H. Cheng, T. C. Chen, C.-H. Lai, C.-H. Lee, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
  347. Y. M. Lin, S. L, Wu, S. J. Chang, P. S. Chen, and C. W. Liu, “Impact of SiN on performance in Novel CMOS Architecture using substrate strained-SiGe and mechanical strained Si technology,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
  348. M .H. Lee, S. T. Chang, S. Maikap, C.-Y. Yu, and C. W. Liu, “The interface properties of SiO2/strained Si with carbon incorporation surface channel MOSFETs,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
  349. W.-C. Hua, P.-T. Lin, C.-P. Lin, C.-Y. Lin, H.-L. Chang, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Coupling Effects of Dual SiGe Power Amplifiers for 802.11n MIMO Applications,” IEEE Radio Frequency Integrated Circuits (RFIC) Conference, San Francisco, USA, 2006
  350. M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2um emission from Si/Ge heterojunction LED and up to 1.55um detection by GOI detector with strain-enhanced features,” 51st International Electron Device Meeting (IEDM), Washington D.C., Dec. 2005
  351. I.-J. Yang, C.-Y. Peng, S. T. Chang, and C. W. Liu, “Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 2005
  352. C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, and C. W. Liu, “Novel Schottky Barrier Ge/Si Heterojunction PMOS,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 2005
  353. W.-C. Hua, H.-H. Lai, P.-T. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “High-Linearity and Temperature-Insensitive 2.4 GHz SiGe Power Amplifier with Dynamic-Bias Control,” 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Conference, Jun. 2005
  354. S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu, and L. J. Chen, “Field emission properties of self-assembled Ge quantum dots grown by ultrahigh vacuum chemical vapor deposition,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 2005
  355. Y. H. Peng, P. S. Chen, M.-J. Tsai, K. T. Chen, C. W. Liu, C. H. Kuan, and S. C. Lee, “The study of Electro-Luminescence from Ge/Si quantum dots and Si/SiGe supperlattices,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), p.226, abstract book, May 2005
  356. S. W. Lee, P. S. Chen, K. F. Liao, M.-J. Tsai, C. W. Liu, and L. J. Chen, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), p.116, abstract book, May 2005
  357. P. S. Chen, M. H. Lee, S. W. Lee, C. W. Liu, and M. -J. Tsai, “(Invited)Strained CMOS technology with Ge,” 207th Meeting of Electrochemical Society, Quebec City, Canada, May 2005
  358. C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 2005
  359. P.-S. Kuo, C.-H. Lin, P. S. Chen, and C. W. Liu, “The current transport mechanism of MOS Photodetector with Pt Gate,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 2005
  360. (Invited) C.-H. Lin, M.-H. Liao, and C. W. Liu, “CMOS Optoelectronics,” Symposium on Nano Device Technology (SNDT), 2005
  361. S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, “Package-strain-enhanced device and circuit performance,” 50th International Electron Device Meeting (IEDM), Technical Digest, pp. 233-236, San Francisco, Dec. 2004
  362. P. S. Chen, S. W. Li, W. Y. Hiseh, M.-J. Tsai, and C. W. Liu, “UHV/CVD of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructure,” International Conference in Asia IUMRS-ICA, Hsinchu, Taiwan, Nov. 2004
  363. (Invited) C. W. Liu, F. Yuan, Z. Pei, and J.-W. Shi, “Si/SiGe heterojunction phototransistor: physics and modeling,” Second International Symposium on Integrated Optoelectronics, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
  364. P. S. Chen, Z. Pei, S. W. Lee, C. W. Liu, and M.-J. Tsai, “Nanostructure and optical properties of self-assembled Ge quantum dots grown in a hot wall UHV/CVD system,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
  365. (Invited) C. W. Liu, S. Maikap, M.-H. Liao and F. Yuan, “BiCMOS devices under mechanical strain,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
  366. S. T. Chang, M. H. Lee, and C. W. Liu, “Strained Si1-xCx on Field Transistor on SiGe Substrate,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
  367. P. S. Chen, S. W. Li, M. H. Li, C.W. Liu and M.-J. Tsai,, “Thin relaxed SiGe buffer for strained Si CMOS,” Semiconductor Manufacturing Technology Workshop, Hsinchu, Taiwan, Sept. 2004
  368. S. W. Lee, P. S. Chen, M. H. Lee, C. W. Liu and L. J. Chen, “The growth of high-quality SiGe films with an Intermediate Si layer for strained Si nMOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
  369. P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
  370. (Invited) C. W. Liu and B.-C. Hsu, “CMOS optoelectronics,” Advance Short-time Thermal Processing for Si-Based CMOS Devices II, 205th Meeting of Electrochemical Society, San Antonio, Texas, May 2004
  371. (Invited) M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y.-C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, “The Noise Characteristics in Strained-Si MOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
  372. T. C. Chen, L. S. Lee, W. Z. Lai, and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
  373. C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on viscous SGOI substrates by wafer bonding and layer transfer techniques,” 15th International Conference on Ion Implantation Technology (IIT), 2004
  374. P. S. Chen, K. F. Liao, M. H. Lin, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Influence of H and He implantation on surface morphology and relaxation in SiGe/Si (100),” 15th International Conference on Ion Implantation Technology (IIT), 2004
  375. P. S. Chen, M.-J. Tsai, C. W. Liu, and S. W. Lee, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004
  376. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, and C. W. Liu, “The growth of high-quality SiGe films by introducing an intermediate Si:C layer,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004
  377. C.-Y. Yu, T. C. Chen, S.-H. Huang, L. S. Lee, and C. W. Liu, “Electrical and Optical Reliability Improvement of HfO2 Gate Dielectric by Deuterium and Hydrogen Incorporation,” 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004
  378. C.-H. Lin, P.-S. Kuo, P. S. Chen, C.-Y. Yu, S. T. Chang, C. W. Liu, “Raising Operation Temperature of MOS Ge/Si Quantum Dot Infrared Photodetectors,” International Electron Devices and Materials Symposia (IEDMS), pp. 277-280, Hsinchu, Taiwan, 2004
  379. P.-S. Kuo, C.-H. Lin, B.-C. Hsu, P.S. Chen, C. W. Liu, “A Dual-bias Operated MOS Photodetector with Pt Gate,” International Electron Devices and Materials Symposia (IEDMS), pp. 411-414, Hsinchu, Taiwan, 2004
  380. C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on the Viscous SGOI Substrates,” 11th Symposium on Nano Device Technology (SNDT), 2004
  381. W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen, “Comprehensive Flicker Noise Characterization of the Strained-Si NMOSFETs,” 11th Symposium on Nano Device Technology (SNDT), 2004
  382. C. C. Lee, Y.-H. Liu, T.-C. Chen, C.–Y. Yu, P. S. Chen, Y. T. Tseng, and C. W. Liu, “The material and electrical characteristics of SiGeC alloy grown by chemical vapor deposition using C2H4 precursors,” Asia, CVD III, Taipei, Taiwan, 2004
  383. M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs,” 49th International Electron Device Meeting (IEDM), Technical Digest, pp. 69-72, Washington D.C., Dec. 2003
  384. P.-S. Kuo, B.-C. Hsu, and C. W. Liu, “Liquid Phase Deposited Oxynitride Films and Quantum Dots Characteristics and Applications on MOS Photodetector,” Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, Nov. 2003
  385. C.-Y. Liang, B.-C. Hsu, S. T. Chang, and C. W. Liu, “Novel Si-based SOI-MOS Photodetectors with Ultrahigh Bandwidth,” Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, Nov. 2003
  386. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Relief of strain in SiGe films with a buffer layer containing Ge quantum dots,” 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM), Yokohama, Japan, Oct. 2003
  387. L. S. Lai, C. S. Liang, P. S. Chen, Y. M. Hsu, Y. H. Liu, Y. T. Tseng, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Optimal SiGe:C HBT Module for BiCMOS Applications,” International Symposium VLSI Technology, System, and Applications, Oct. 2003
  388. (Invited) J.-W. Shi, Z. Pei, Y.-M. Hsu, F. Yuan, C.-S. Liang, Y.-T. Tseng, P.-S. Chen, C. W. Liu, S.-C. Lu, M.-J. Tsai, “Si/SiGe Heterojunction Phototransistor,” International Topical Meeting on Microwave Photonics, Budapest, Hungary, Sept. 2003
  389. P. S. Chen, S. W. Lee, Y. H. Peng, Z. Pei, M.-J. Tsai, and C. W. Liu, “Novel composite Ge/Si/Ge quantum dots with high PL efficiency and improved uniformity,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
  390. H. C. Chen, S. W. Lee, S. L. Cheng, L. J. Chen, P. S. Chen and C. W. Liu, “Enhanced growth of amorphous interlayer in Ti thin films on strained Si/SiGe relaxed substrates,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
  391. Y. H. Peng, J.-H. Lu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, S. W. Lee, L. J. Chen, M. H. Ya, Y. F. Chen, “Schottky Quantum Dots Infrared Photodetector with Far Infrared Response,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
  392. L. S. Lai, Y. H. Liu, C. S. Liang, Y. T. Tseng, Y. M. Shiu, P. S. Chen, S. C. Lu, C. W. Liu and M.-J. Tsai, “The optimal base design for SiGe heterojunction bipolar transistors with high fT,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
  393. W.-C. Hua, T.-Y. Yang, C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
  394. S. W. Lee, P. S. Chen, Y. H. Peng, C. W. Liu and L. J. Chen, “Improved quality of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
  395. F. Yuan, Z. Pei, J.-W. Shi, S. T. Chang, and C. W. Liu, “Mextram Modeling of Si/SiGe Heterojunction Phototransistors,” International Semiconductor Device Research Symposium (ISDRS), pp. 92-93, Washington D.C., 2003
  396. B.-C. Hsu, S. T. Chang, P.-S. Kuo, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “MOS Ge/Si Quantum Dot Infrared Photodetectors with Quantum Dot and Wetting Layer Responses,” International Semiconductor Device Research Symposium (ISDRS), pp. 491-492, Washington D.C., 2003
  397. Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C.-S. Liang, C. W. Liu, T.-M. Pan, S. C. Lu and M.-J. Tsai, “Integratable SiGe Phototransistor with High Speed (BW=3GHz) and Extremely-High Avalanche Responsivity,” International Semiconductor Device Research Symposium (ISDRS), pp. 18-19, Washington D.C., 2003
  398. C.-Y. Liang, B.-C. Hsu, C.-H. Lin, S. T. Chang, and C. W. Liu, “Modeling and Simulation of High-bandwidth Si-based MOS/SOI Photodetectors,” International Semiconductor Device Research Symposium (ISDRS), pp. 230-231, Washington D.C., 2003
  399. S. T. Chang, Y. H. Liu, and C. W. Liu, “Buried Oxide Thickness Effect and Lateral Scaling og SiGe HBT on SOI Substrate,” International Semiconductor Device Research Symposium (ISDRS), pp. 16-17, Washington D.C., 2003
  400. (Invited) B.-C. Hsu, Z. Pei, S. T. Chang, P. S. Kuo, P. S. Chen, and C. W. Liu, “Si-based Optoelectronics,” 10th Symposium on Nano Device Technology (SNDT), pp. 1-4, 2003
  401. M. H. Lee, P. S. Chen, Y. T. Tseng, Y. M. Hsu, S. W. Lee, J.-Y. Wei, C.-Y. Yu, and C. W. Liu, “Performance enhancement in strained-Si NMOSFETs on SiGe virtual substrate,” 10th Symposium on Nano Device Technology (SNDT), pp. 28-31, 2003
  402. S. W. Lee, P. S. Chen, L. J. Chen, and C. W. Liu, “The growth of high-quality uniform SiGe films by introducing an intermediate Si layer,” International Conference on Metallurgical Coatings and Thin Films (ICMCTF), pp. 78, San Diego, California, 2003
  403. B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, “High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short Reach Integrated Optical Receivers,” 48th International Electron Device Meeting (IEDM), Technical Digest, pp. 91-94, San Francisco, Dec. 2002
  404. Z. Pei, C.S. Liang, L.S. Lai, Y.T. Tseng, Y.M. Hsu, P.S. Chen, S.C. Lu, C.M. Liu, M.-J. Tsai and C.W. Liu, “High Efficient 850nm and 1310nm Multiple Quantum Well SiGe/Si Heterojunction Phototransistors with 1.25 Plus GHz Bandwidth,” 48th International Electron Device Meeting (IEDM), Technical Digest, pp. 297-300, San Francisco, Dec. 2002
  405. F. Yuan, C. -H. Lin, C. -R. Shie, K. -F. Chen, M. H. Lee, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sept. 2002
  406. W. -C. Hua, M. H. Lee, and C. W. Liu, “A Novel Gas Switching Method to Improve the Reliability of Rapid Thermal Oxide,” 201st Meeting of Electrochemical Society, Philadelphia, May 2002
  407. B.-C. Hsu, W.-C. Hua, C.-R. Shie, C.-C. Lai, K.-F. Chen and C. W. Liu, “A Novel Ge MOS Detector for 1.3um and 1.5um Light Wave Communication,” 201st Meeting of Electrochemical Society, pp. 662, Philadelphia, May 2002
  408. S. T. Chang and C. W. Liu, “Effects of Recombination Lifetime and Velocity Saturation on Ge Profile Design for Base Transit Time of Si/SiGe HBTs,” International Semiconductor Device Research Symposium (ISDRS), ISDRS Proceedings, pp. 490-493, Washington D.C., Dec. 2001
  409. C.-H. Lin, M. H. Lee, B. -C. Hsu, K. -F. Chen, C. -R. Shie, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Semiconductor Device Research Symposium (ISDRS), ISDRS Proceedings, pp. 46-49, Washington D.C., Dec. 2001
  410. B. -C. Hsu, W. T. Liu, C. -H. Lin and C. W. Liu, “Novel Photodetectors Using Metal-Oxide-Silicon Tunneling Structures,” International Semiconductor Device Research Symposium (ISDRS), ISDRS Proceedings, pp. 42-45, Washington D.C., Dec. 2001
  411. S. T. Chang, C. W. Liu, and C. -H. Lin,, “Optimum Ge Profile Design for Base Transit Time Minimization of SiGe HBT,” Asia-Pacific Microwave Conference (APMC), APMC Proceedings, Vol. 1 of 3, p, Taipei, Taiwan, Dec. 2001
  412. C. -H. Lin, M. H. Lee, B. -C. Hsu, and C. W. Liu, “Novel Methods to Incorporate Deuterium in the MOS Structures and Isotope Effects on Soft Breakdown and Interface States,” International Conference on Solid State Devices and Materials (SSDM), SSDM Proceedings, pp. 422-423, Tokyo, Japan, Sept. 2001
  413. C. W. Liu, Y.-H. Liu, M. H. Lee, M.-J. Chen, and C.-F. Lin, “Metal-Oxide-Silicon Light Emitting Diodes Prepared by Rapid Thermal Oxidation,” Rapid Thermal and Other Short-time Processing Technology II, 199th Meeting of Electrochemical Society, Washington D.C., Mar. 2001
  414. C.-F. Lin, M.-J. Chen, M. H. Lee, and C. W. Liu, “Electroluminescence at Si Bandgap from Metal-Oxide-Semiconductor tunneling diodes,” Photonic West, International Society for Optical Engineering (SPIE), San Jose, CA, Jan. 2001
  415. C.-F. Lin, M.-J. Chen, E. Z. Liang, W. T. Liu, M. H. Lee, and C. W. Liu, “Novel Electroluminescence from Metal-Insulator-Oxide Structures on Si,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, Dec. 2000
  416. M.-J. Chen, C.-F. Lin, J. J. Chiu, C. W. Liu, and S.-W. Chang, “Metal-Oxide-Semiconductor Light-Emitting Diodes at Si Bandgap Energy,” IEEE Conference on Lasers and Electro-Optics Europe (CLEO/Europe), Nice, France, Sept. 2000
  417. Chun-Yi Cheng, Bo-Wei Huang, Xin-Yuan Lin, and C. W. Liu, “Monolithic 3-Tier Nanosheet Transistor Stacking Featuring Split Gate and Half SRAM Functionalities,” 56th IEEE Semiconductor Interface Specialists Conference (SISC)
  418. C. W. Liu, Chien-Te Tu, Yi-Chun Liu, and Shih-Ya Lin, “Vertically Stacked High Mobility GeSi nGAAFETs,” PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting), Honolulu, Hawaii

Books:

  1. “Invited” C. W. Liu, S. Maikap, and C.-Y. Yu, “Recent Progress in Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, May 2005
  2. 劉致為, 李敏鴻, 魏拯華, “奈米電子,” National Taiwan University Press, 2004
  3. C. W. Liu and L. J. Chen, “SiGe/Si Heterostructures,” Encyclopedia of Nanoscience and Nanotechnology, American Scientific Publishers, 2003
  4. 劉致為, 張書通, “矽鍺技術,” 電子月刊九月號第98期, 積體電路技術專輯, pp.110-119 pages, 2003
  5. 劉致為, “CMOS光電元件,” 台灣奈米科技, 2003
  6. 劉致為, 游李興, “奈米技術及產業通識教材(3)奈米電子元件,” 2002 Science and Technology Information Center, National Science Council, 2002

Patents:

  1. Bo-Wei Huang, Chien-Te Tu, Chee-Wee Liu, “Semiconductor device and method for forming the same,” US 12,672,345 B2, Jun. 2026
  2. Shahaji B. More, Cheng-Han Lee, Shih-Chieh Chang, Wan Hsuan Hsieh, Yi-Chun Liu, Chee-Wee Liu, “Multi-gate transistors having deep inner spacers,” US 12,615,801 B2, Apr. 2026
  3. Hsin-Cheng Lin, Tao Chou, Chee-Wee Liu, “Memory device and method for forming the same,” US 12,588,181 B2, Mar. 2026
  4. Ya-Jui Tsou, Jih-Chao Chiu, Huan-Chi Shih, Chee-Wee Liu, Shao-Yu Lin, Chih-Lin Wang, “Memory device and formation method thereof,” US 12,557,558 B2, Feb. 2026
  5. Hsin-Cheng Lin, Tao Chou, Kuan-Ying Chiu, Chee-Wee Liu, “SRAM cell with write-assist transistors,” US 12,531,115 B2, Jan. 2026
  6. Tao Chou, Hsin-Cheng Lin, Jih-Chao Chiu, Chee-Wee Liu, “Memory device adjusting reference voltage signal,” US 12,475,943 B2, Nov. 2025
  7. Wen-Hsien Tu, Chee-Wee Liu, Fang-Liang Lu, “Source and drain epitaxial layers,” US 12,446,268 B2, Oct. 2025
  8. Jih-Chao Chiu, Ya-Jui Tsou, Wei-Jen Chen, Chee-Wee Liu, Shao-Yu Lin, Chih-Lin Wang,, “Memory device and formation method thereof,” US 12,451,175 B2, Oct. 2025
  9. Hsin-Cheng Lin, Chia-Che Chung, Chee-Wee Liu, “Capacitor and method for forming the same,” US 12,432,941 В2, Sept. 2025
  10. Chien-Te Tu, Chee-Wee Liu, “Semiconductor device and manufacturing method thereof,” US 12,389,635 B2, Aug. 2025
  11. Jih-Chao Chiu, Song-Ling Li, Chee-Wee Liu, “Semiconductor device with oxide-based semiconductor channel,” US 12,349,413 В2, Jul. 2025
  12. Hung-Yu Ye, Yu-Shiang Huang, Chien-Te Tu, Chee-Wee Liu, “Fin field effect transistors (FINFET) device including a plurality of recessed regions alternating with unrecessed regions in channel stack,” US 12,349,425 В2, Jul. 2025
  13. Chia-Che Chung, Chun-Yi Cheng, Chee-Wee Liu, “Integrated circuit structure and fabrication thereof,” US 12,336,190 B2, Jun. 2025
  14. Miin-Jang Chen, Kuen-Yu Tsai, Chee-Wee Liu, “Method for non-resist nanolithography,” US 12,308,368 B2, May 2025
  15. Eknath Sarkar, Yichen Ma, Yu-Chieh Lee, Chee-Wee Liu, “Photosensor having a scattering structure comprises circular ring and peripheral patterns,” US 12,310,138 В2, May 2025
  16. Zong-You Luo, Ya-Jui Tsou, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang, “Magnetoresistive memory device and manufacturing method thereof,” US 12,315,541 В2, May 2025
  17. Yu-Shiang Huang, Chee-Wee Liu, “Semiconductor device and method for forming the same,” US 12,272,734 B2, Apr. 2025
  18. Chia-Che Chung, Hsin-cheng Lin, Chee-Wee Liu, “Write assist circuit for memory device,” US 12,249,367 B2, Mar. 2025
  19. Dai-Ying Lee, Teng-Hao Yeh, Wei-Chen Chen, Rachit Dobhal, Zefu Zhao, Chee-Wee Liu, “Integrated circuit structure and method for forming and operating the same,” US 12,254,915 B1, Mar. 2025
  20. Chia-Che Chung, Chia-Jung Tsen, Chee-Wee Liu, “Semiconductor Device And Formation Method Thereof,” US 12,191,145 B2, Jan. 2025
  21. Ming-Tzong Yang, Hsien-Hsin Lin, Wen-Kai Wan, Chia-Che Chung, Chee-Wee Liu, “Method of manufacturing heat dissipation substrate with high thermal conductivity for semiconductor device,” US 12,191,226 B2, Jan. 2025
  22. Chung-en Tsai, Chia-che Chung, Chee-wee Liu, Fang-liang Lu, Yu-shiang Huang, Hung-yu Yeh, Chien-te Tu, Yi-chun Liu, “Gate-all-around transistor with strained channels,” US 12,211,897 B2, Jan. 2025
  23. Chien-te Tu, Hsin-cheng Lin, Chee-wee Liu, “Stacked semiconductor device with nanostructure channels,” US 12,170,227 B2, Dec. 2024
  24. Shahaji B. More, Cheng-Han Lee, Shih-Chieh Chang, Shih-Ya Lin, Chung-En Tsai, Chee-Wee Liu, “Germanium tin gate-all-around device,” US 12,154,951 B2, Nov. 2024
  25. 摩爾沙哈吉Ｂ 李承翰 張世杰 謝宛軒 蔡仲恩 劉致為, “半導體結構及其形成方法,” I854221, Sept. 2024
  26. Ya-Jui Tsou, Zong-You Luo, Wen Hung Huang, Jhih-Yang Yan, Chee-Wee Liu, “Nanowire stack GAA device with selectable numbers of channel strips,” US 12,100,737 B2, Sept. 2024
  27. Ya-Jui Tsou, Wei-Jen Chen, Pang-Chun Liu, Chee-Wee Liu, Shao-Yu Lin, Chih-Lin Wang, “Memory device and forming method thereof,” US 12,062,713 B2, Aug. 2024
  28. Ya-Jui Tsou, Zong-You Luo, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang, “Method for manufacturing memory device,” US 12,069,965 B2, Aug. 2024
  29. Wei-Jen Chen, Ya-Jui Tsou, Chee-Wee Liu, Shao-Yu Lin, Chih-Lin Wang, “Memory structure and formation method thereof,” US 12,052,934 B2, Jul. 2024
  30. 鍾嘉哲 鄭群議劉致為, “積體電路結構及其製造方法,” I843098, May 2024
  31. 林鑫成 周韜 劉致為, “記憶體元件及其形成方法,” I843531, May 2024
  32. Chien-Te Tu, Hsin-Cheng Lin, Chee-Wee Liu, “Stacked semiconductor device with nanostructure channels and manufacturing method thereof,” US 11,955,384 B2, Apr. 2024
  33. Chia-Che Chung, Chia-Jung Tsen, Ya-Jui Tsou, Chee-Wee Liu, “Physically unclonable function cell and operation method of same,” US 11,967,351 B2, Apr. 2024
  34. Hung-Yu Ye, Yu-Shiang Huang, Chien-Te Tu, Chee-Wee Liu, “Semiconductor device and formation method,” US 11,908,892 B2, Feb. 2024
  35. 摩爾沙哈吉Ｂ 李承翰 張世杰 謝宛軒 劉亦浚 劉致為, “半導體結構及其製造方法,” I829141, Jan. 2024
  36. 邱日照 鄒亞叡 陳韋任 劉致為 林劭昱 王智麟, “記憶體元件及其形成方法,” I830298, Jan. 2024
  37. Hung-Yu Ye, Chung-Yi Lin, Yun-Ju Pan, Chee-Wee Liu, “Memory device and SRAM cell,” US 11,864,369 B2, Jan. 2024
  38. 林鑫成 達艾維 邱冠穎 劉致為, “高頻電晶體,” I826190, Dec. 2023
  39. 光感測器, “卡伊納 馬翊宸 李宥頡 劉致為,” I822483, Nov. 2023
  40. 鄒亞叡 陳韋任 劉邦均 劉致為 林劭昱 王智麟, “記憶體裝置及其形成方法,” I817845, Oct. 2023
  41. Chung-En Tsai, Chia-Che Chung, Chee-Wee Liu, Fang-Liang Lu, Yu-Shiang Huang, Hung-Yu Yeh, Chien-Te Tu, Yi-Chun Liu,, “Gate-all-around device,” US 11,776,998 B2, Oct. 2023
  42. Ya-Jui Tsou, Zong-You Luo, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang,, “Memory device,” US 11,778,923 B2, Oct. 2023
  43. Chih-Hsiung Huang, Chung-En Tsai, Chee-Wee Liu, Kun-Wa Kuok, Yi-Hsiu Hsiao, “Semiconductor device having doped work function metal layer,” US 11,791,338 B2, Oct. 2023
  44. Fang-Liang Lu, I-Hsieh Wong, Shih-Ya Lin, CheeWee Liu, Samuel C. Pan, “Semiconductor device and manufacturing method thereof,” US 11,791,410 B2, Oct. 2023
  45. 鍾嘉哲 岑家榮 鄒亞叡 劉致為, “半導體裝置及其操作方法,” I815554, Sept. 2023
  46. Zong-You Luo, Ya-Jui Tsou, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang,, “Magnetoresistive memory device and manufacturing method thereof,” US 11,749,328 B2, Sept. 2023
  47. Ya-Jui Tsou, Zong-You Luo, Wen Hung Huang, Jhih-Yang Yan, Chee-Wee Liu, “Nanowire stack GAA device with selectable numbers of channel strips,” US 11,742,388 B2, Aug. 2023
  48. 林詩雅 杜建德 蔡仲恩 劉致為, “半導體裝置及其形成方法,” I809822, Jul. 2023
  49. Sheng-Ting Fan, Pin-Shiang Chen, Chee Wee Liu, Chi-Wen Liu, “Semiconductor device and method,” US 11,664,218 B2, May 2023
  50. 楊明宗 林憲信 萬文愷 鍾嘉哲 劉致為, “半導體裝置及形成半導體裝置的方法,” I799955, Apr. 2023
  51. Huang-Siang Lan, CheeWee Liu, Chi-Wen Liu, Shih-Hsien Huang, I-Hsieh Wong, Hung-Yu Yeh, Chung-En TSAI, “Semiconductor device and method of manufacturing thereof,” US 11,631,768 B2, Apr. 2023
  52. Zong-you Luo, Ya-jui Tsou, I-cheng Tung, Cheewee Liu, “Magnetic tunnel junction structures and related methods,” US 11,605,670, Mar. 2023
  53. Jhih - Yang Yan, Fang - Liang Lu, Chee - Wee Liu, “Semiconductor device,” US 11,551,992 B2, Jan. 2023
  54. 葉泓佑 黃郁翔 杜建德 劉致為, “半導體裝置及其形成方法,” I788031, Dec. 2022
  55. Miin-Jang Chen, Kuen-Yu Tsai, Chee-Wee Liu, “Method for non-resist nanolithography,” US 11,532,729 B2, Dec. 2022
  56. Yen-Ting Chen, I-Hsieh Wong, Chee-Wee Liu, “Semiconductor device and formation thereof,” US 11,404,284 B2, Aug. 2022
  57. Zong-You Luo, Ya-Jui Tsou, Chee-Wee Liu, Shao-Yu LIN, Liang-Chor Chung, Chih-Lin Wang, “Magnetoresistive memory device and manufacturing method thereof,” US 11,410,714 B2, Aug. 2022
  58. Ya-Jui Tsou, Zong-You Luo, Wen Hung Huang, Jhih-Yang Yan, CheeWee Liu, “Nanowire stack GAA device with selectable numbers of channel strips,” US 11,411,082 B2, Aug. 2022
  59. Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, C. W. Liu, “Method for forming semiconductor device having boron-doped germanium tin epitaxy structure,” US 11,374,115 B2, Jun. 2022
  60. 藍偟翔 劉致為 劉繼文 黃仕賢 翁翊軒 葉泓佑 蔡仲恩, “半導體元件與其製造方法,” I757272, Mar. 2022
  61. 呂芳諒 翁翊軒 林詩雅 劉致為 潘正聖, “半導體元件及其製造方法,” I757373, Mar. 2022
  62. Hung-Yu Ye, Chung-Yi Lin, Yun-Ju Pan, C. W. Liu, “Memory device, SRAM cell, and manufacturing method thereof,” USP 11,282,843, Mar. 2022
  63. Chih-Hsiung Huang, Chung-En Tsai, Chee-Wee Liu, Kun-Wa Kuok, Yi-Hsiu Hsiao, “Semiconductor device and manufacturing method thereof,” USP 11,244,945, Feb. 2022
  64. Chung-En TSAI, Chia-Che CHUNG, Chee-Wee LIU, Fang-Liang LU, Yu-Shiang HUANG, Hung-Yu YEH, Chien-Te TU, Yi-Chun LIU, “Semiconductor device and manufacturing method thereof,” USP 11,233,120, Jan. 2022
  65. Ya-Jui Tsou, Zong-You Luo, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang, “Memory device and manufacturing method thereof,” USP 11,177,430, Nov. 2021
  66. Fang-Liang Lu, I-Hsieh Wong, Shih-Ya Lin, C. W. Liu, Samuel C. Pan, “Semiconductor device and manufacturing method thereof,” USP 11,063,149, Jul. 2021
  67. Fang-Liang Lu, Chia-Che Chung, Yu-Jiun Peng, C. W. Liu, “Semiconductor device and manufacturing method thereof,” USP 11,031,470, Jun. 2021
  68. Sheng-Ting Fan, Pin-Shiang Chen, C. W. Liu, Chi-Wen Liu, “Semiconductor device and method,” USP 11,043,376, Jun. 2021
  69. Pin-Shiang Chen, Sheng-Ting Fan, C. W. Liu, “Semiconductor device and manufacturing method thereof,” USP 11,018,239, May 2021
  70. I-Hsieh Wong, Samuel C. Pan, C. W. Liu, Huang-Siang Lan, Chung-En Tsai, Fang-Liang Lu, “Semiconductor device and manufacturing method thereof,” USP 10,957,784, Mar. 2021
  71. 廖宇鴻 潘正聖 樊聖亭 李敏鴻 劉致為 , “半導體裝置,” I717528, Feb. 2021
  72. 杜文仙 劉致為 呂芳諒, “半導體結構與其製作方法,” I754420, Feb. 2021
  73. Chun-Ti Lu, Meng-Chin Lee, Fang-Liang Lu, C. W. Liu, “Laser anneal process,” USP 10,867,809, Dec. 2020
  74. Pin-Shiang Chen, Hung-Chih Chang, C. W. Liu, Samuel C. PAN, “Multi-channel field effect transistors using 2D-material,” USP 10,879,404, Dec. 2020
  75. Jhih-Yang Yan, Fang-Liang Lu, C. W. Liu, “Semiconductor device and method for manufacturing the same,” USP 10,804,180, Oct. 2020
  76. Yen-Ting Chen, I-Hsieh Wong, C. W. Liu, “Semiconductor device and formation thereof,” USP 10,777,426, Sept. 2020
  77. Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, C. W. Liu, “Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same,” USP 10,777,663, Sept. 2020
  78. Yu-Shiang Huang, Hung-Yu Yeh, Wen Hung Huang, C. W. Liu, “Stacked vertically isolated MOSFET structure and method of forming the same,” USP 10,748,935, Aug. 2020
  79. Yu-Hung Liao, Samuel C. Pan, Sheng-Ting Fan, Min-Hung Lee, C. W. Liu, “Semiconductor device and manufacturing methods thereof,” USP 10,686,072, Jun. 2020
  80. Miin-Jang Chen, Kuen-Yu Tsai, C. W. Liu, “Method for non-resist nanolithography,” USP 10,665,696, May 2020
  81. Sheng-Ting Fan, Pin-Shiang Chen, C. W. Liu, Chi-Wen Liu, “Semiconductor device and method,” USP 10,636,651, Apr. 2020
  82. 翁翊軒 潘正聖 劉致為 藍偟翔 蔡仲恩 呂芳諒, “製造半導體裝置的方法,” I681463, Jan. 2020
  83. Fang-Liang Lu, Chia-Che Chung, Yu-Jiun Peng, C. W. Liu, “Semiconductor device and manufacturing method thereof,” USP 10,535,737, Jan. 2020
  84. Fang-Liang Lu, I-Hsieh Wong, Shih-Ya Lin, C. W. Liu, Samuel C. Pan, “Semiconductor device and manufacturing method thereof,” USP 10,510,888, Dec. 2019
  85. 尹相偉 蔡政剛 葉雲傑 魯珺地 江奇詠 劉致為, “太陽能電池,” I667797, Aug. 2019
  86. Huang-Siang Lan, C. W. Liu, Chi-Wen Liu, Shih-Hsien Huang, I-Hsieh Wong, Hung-Yu Yeh, Chung-En Tsai, “Semiconductor device having stressor layer,” US 10,340,383, Jul. 2019
  87. I-Hsieh WONG, Samuel C. PAN, C. W. Liu, Huang-Siang Lan, Chung-En Tsai, Fang-Liang LU, “Semiconductor device and manufacturing method thereof,” US 10,332,985, Jun. 2019
  88. Pin-Shiang Chen, Samuel C. Pan, C. W. Liu, Sheng-Ting Fan, “Field effect transistors and methods of forming same,” USP 10,290,708, May 2019
  89. Pin-Shiang Chen, Hung-Chih Chang, C. W. Liu, Samuel C. PAN, “Multi-channel field effect transistors using 2D-material,” US 10,269,981, Apr. 2019
  90. Sheng-Ting Fan, Pin-Shiang Chen, C. W. Liu, Chi-Wen Liu, “Semiconductor device and method,” US 10,109,477, Oct. 2018
  91. 半導體裝置及其製造方法, “樊聖亭 陳品翔 劉致為 劉繼文,” I637429, Oct. 2018
  92. Sheng-Ting Fan, Pin-Shiang Chen, C. W. Liu, Chi-Wen Liu, “Semiconductor device and method,” US 10,109,477, Oct. 2018
  93. Fang-Liang Lu, C. W. Liu, Chi-Wen Liu, Shih-Hsien Huang, I-Hsieh Wong, “Semiconductor device including field effect transistor and a method for fabricating the same,” USP 10,068,995, Sept. 2018
  94. Sun-Rong Jan, Che-Yu Yeh, C. W. Liu, Chien-Hua Huang, Bing J. Sheu, “Through silicon via layout pattern,” USP 10,002,820, Jun. 2018
  95. Fang-Liang LU, I-Hsieh WONG, Shih-Ya LIN , C. W. Liu, Samuel C. PAN, “SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,” US 2018 / 0151734 A1, May 2018
  96. Miin-Jang Chen, Kuen-Yu Tsai, C. W. Liu, “Method for non-resist nanolithography,” USP 9,972,702, May 2018
  97. Der-Chuan Lai, Samuel C. Pan, Yu-Cheng Shen, Min-Hung Lee, C. W. Liu, “Negative capacitance field effect transistor with charged dielectric material,” USP 9,978,868, May 2018
  98. C. W. Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh, “Field effect transistors and methods of forming same,” USP 9,923,093, Mar. 2018
  99. Fang-Liang LU, C. W. Liu, Chi-Wen LIU, Shih-Hsien HUANG, I-Hsieh WONG, “SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR AND A METHOD FOR FABRICATING THE SAME,” US 10,068,995, Jan. 2018
  100. Yen-Ting Chen, I-Hsieh Wong, C. W. Liu, “Semiconductor device and formation thereof,” US 9,847,233, Dec. 2017
  101. Jhih-Yang Yan, C. W. Liu, Der-Chuan Lai, “Semiconductor device and transistor,” US 9,679,893, Jun. 2017
  102. 李暐凡 劉致爲 王錦焜 范彧達 黃智雄 林子堯, “半導體結構及其形成方法,” I580045, Apr. 2017
  103. Jhih-Yang Yan, Samuel C. Pan, C. W. Liu, Hung-Yu Yeh, Da-zhi Zhang, “Three-dimensional transistor and methods of manufacturing thereof,” US 9,627,411, Apr. 2017
  104. 杜文仙 劉致為, “電晶體結構,” I574414, Mar. 2017
  105. Wei-Fan Lee, C. W. Liu, Chin-Kun Wang, Yuh-Ta FAN, Chih-Hsiung Huang, Tzu-Yao Lin, “Semiconductor structure with interfacial layer and method for manufacturing the same,” US 9,595,593, Mar. 2017
  106. Der-Chuan Lai, Pin-Shiang Chen, Hung-Chih Chang, C. W. Liu, Samuel C. Pan, “Field effect transistors and methods of forming same (Multi 2D-Material Channel Field Effect Transistors with Negative Capacitance in Ferroelectric Materials),” US 9,559,168, Jan. 2017
  107. C. W. Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh, “Field effect transistors and methods of forming same (A Structure of Vertical FETs),” US 9,559,209, Jan. 2017
  108. Pin-Shiang Chen, Samuel C. Pan, C. W. Liu, Sheng-Ting Fan, “Field effect transistors and methods of forming same (Field Effect Transistors using Topological Insulators),” US 9,490,430, Nov. 2016
  109. Hung-Chih Chang, Pin-Shiang Chen, C. W. Liu, “Transistor with wurtzite channel,” US 9,425,250, Aug. 2016
  110. 劉致為 陳彥廷, “半導體結構,” I531059, Apr. 2016
  111. C. W. Liu, Yen-Yu Chen, Hsuan-Yi Lin, Cheng-Yi Peng, “Semiconductor device having a charged insulating layer,” US 9,263,542, Feb. 2016
  112. Hung-Chih Chang, Pin-Shiang Chen, C. W. Liu, “3D UTB transistor using 2D material channels,” US 9,240,478, Jan. 2016
  113. C. W. Liu, Y. T. Chen, “Semiconductor Structure,” US 9,105,481 B2, Aug. 2015
  114. Chun-Lin Chu, Shu-Han Hsu, Guang-Li Luo, C. W. Liu, “BRIDGE STRUCTURE,” US 8,975,674, Mar. 2015
  115. 朱俊霖 許舒涵 羅廣禮 劉致為, “浮橋結構及其製造方法,” I451494, Sept. 2014
  116. Jyun-Jhe Tsai, Ying-Jhe Yang, C. W. Liu, “Structure and method of solar cell efficiency improvement by strain technology,” US 8,664,516 B2, Mar. 2014
  117. 劉致為 何偉碩陳彥瑜 古俊源 吳振誠 梁碩瑋 陳人杰 賴忠威 陳宗保, “太陽能電池及其製作方法,” CN102064211B, Oct. 2013
  118. 蔡文發 廖炯峰 陳彥瑜 劉致為 艾啟峰, “鈍化修補太陽能電池缺陷之方法,” I402898, Jul. 2013
  119. 劉致為 何偉碩 陳彥瑜 古俊源 陳建任 林漢涂 梁碩瑋, “太陽電池,” CN101866969B, Sept. 2012
  120. Sun-Rong Jan, Che-Yu Yeh, C. W. Liu, Chien-Hua Huang, and Bing J. Sheu., “Placement for through Silicon Vias in 3D IC Chips,” US 13/478,815, May 2012
  121. 劉致為 林楚軒 江彥德 徐正璋, “光偵測器的製造方法,” 中華民國 I360232, Mar. 2012
  122. W.-F. Tsai, J.-F. Liao, Y.-Y. Chen, C. W. Liu, C.-F. Ai, “Solar cell defect passivation method,” US 8,062,964, Nov. 2011
  123. Y. T. Chen, C.-F. Huang, H.-C. Sun, C. W. Liu, “Memory formed by using defects,” US 8,009,479, Aug. 2011
  124. 劉致為 賴俊宏 陳盟坤 何偉碩, “P-N二極體光波感測之方法及裝置,” 中華民國I346393, Aug. 2011
  125. 程子桓 李政霆 許文瑋 劉致為, “雷射結構及其製造方法,” 中華民國I340513, Apr. 2011
  126. C. W. Liu, C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, “Manufacturing process for a photodetector,” US 7,906,360C, Mar. 2011
  127. 劉致為 江彥德 李敏鴻 鄧鈺, “可撓式電子裝置及其製程,” 中華民國I335046, Dec. 2010
  128. 黃靖方 劉志祥 劉致為, “利用應變技術改變薄膜電晶體遷移率之方法,” 中華民國I319211, Jan. 2010
  129. C. W. Liu, C.-H. Lai, M.-K. Chen, W.-H. Ho, “Method for photo-detecting and apparatus for the same,” US 7,579,668, Aug. 2009
  130. P.-S. Chen, S. W. Lee, L. J. Chen, C. W. Liu, “Strained silicon forming method with reduction of threading dislocation density,” US 7,498,224, Mar. 2009
  131. C.-H. Lin, Z. Pei, C. W. Liu, “Method for fabricating semiconductor device,” US 7,371,628, May 2008
  132. C.-Y. Yu, S.-R. Jan, S.-T. Chang, C. W. Liu, “Method with mechanically strained silicon for enhancing speed of integrated circuits of devices,” US 7,307,004, Dec. 2007
  133. M. H. Lee, C.-Y. Yu, S.-C. Lu, C. W. Liu, “Fabrication methods for compressive strained-silicon and transistors using the same,” US 7,282,414, Oct. 2007
  134. P.-S. Chen, S. W. Lee, K.-F. Liao, L. J. Chen, C. W. Liu, “Construction of thin strain-relaxed SiGe layers and method for fabricating the same,” US 7,202,512, Apr. 2007
  135. 李敏鴻 張書通 劉致為 陸新起, “應變矽碳場效電晶體,” 中華民國I270986, Jan. 2007
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