M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, “Metallic state in a strongly interacting spinless two-valley electron system in two dimensions,” Phys. Rev. B, Vol. 101, No. 4, pp. 045302, Jan. 2020
Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu, “Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors,” IEEE Electron Device Letters, vol. 41, no. 1, pp. 147-150, Jan. 2020
Chia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs,” IEEE Electron Device Letters, vol. 40, no. 12, pp. 1913-1916, Dec. 2019
Ya-Jui Tsou, Jih-Chao Chiu, Huan-Chi Shih, and C. W. Liu, “Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Nov. 2019
Emmanuele Galluccio, Nikolay Petkov, Gioele Mirabelli, Jessica Doherty, Shih-Ya Lin, Fang-Liang Lu, C. W. Liu, Justin D. Holmes, and Ray Duffy, “Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08,” Thin Solid Films, Vol. 690, 137568, Nov. 2019
An-Hung Tai, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures,” IEEE Transactions on Electron Devices, Vol. 66, No. 10, pp. 4188-4192, Oct. 2019
Chih-Hsiung Huang, Chung-En Tsai, Yu-Rui Chen, and C. W. Liu, “Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride,” IEEE Electron Device Letters, Vol. 40, No. 8, pp.1237-1240, Aug. 2019
C.-C. Chung, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance,” IEEE Transactions on Electron Devices, Vol. 66, No. 6, pp. 2710-2714, Jun. 2019
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, and C. W. Liu, “Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system,” Phys. Rev. B, Vol. 99, No. 8, 081106(R), Feb. 2019
Pin-Shiang Chen and C. W. Liu, “Theoretical Calculation of Ferroelectric Hf1-xZrxO2 by First-Principle Molecular Dynamic Simulation,” Mater. Res., Express 6, 095045, 2019
Hung-Yu Ye, Chia-Che Chung and C. W. Liu, “Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence,” IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5295-5300, Dec. 2018
Yu-Shiang Huang, Fang-Liang Lu , Ya-Jui Tsou, Hung-Yu Ye, Shih-Ya Lin, Wen-Hung Huang, and C. W. Liu, “Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process,” IEEE Electron Device Letters, Vol. 39, No. 9, pp.1274-1277, Sept. 2018
Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu, “Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well,” Opt. Mater. Express, 8, 2795-2802, Sept. 2018
Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition,” Thin Solid Films, Vol. 660, pp. 263-266, Aug. 2018
E. Bussmann, John King Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T.-M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials, 2, 066004, Jun. 2018
V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields,” JETP Letters, Vol. 107, No. 12, pp. 794-797, Jun. 2018
Fang-Liang Lu, Chung-En Tsai, I-Hsieh Wong, Chun-Ti Lu, and C. W. Liu, “Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications,” IEEE Transactions on Electron Devices, Vol. 65, No. 7, pp. 2925-2931, May 2018
M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/ SiGe quantum wells,” Journal of Applied Physics, 122, 224301, Dec. 2017
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Indication of band flattening at the Fermi level in a strongly correlated electron system,” Scientific Reports, 7, 14539, Nov. 2017
T. M. Lu, C. T. Harris, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Appl. Phys. Lett., Vol. 111, 102108, Sept. 2017
Chun-Ti Lu, Fang-Liang Lu, Chung-En Tsai, Wen-Hung Huang, and C. W. Liu, “Process simulation of pulsed laser annealing on epitaxial Ge on Si,” ECS J. Solid State Sci. Tech., Vol. 6, pp. 495-498, Jun. 2017
H.-S. Lan, S. T. Chang, and C. W. Liu, “Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys,” Phys. Rev. B, Rapid Communication, 95, 201201(R), May 2017
Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness,” IEEE Trans. on Electron Devices, Vol. 64, No. 6, pp.2498-2504, May 2017
T. M. Lu, L. A. Tracy, D. Laroche, S.-H. Huang, Y. Chuang, Y.-H. Su, J.-Y. Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports, 7, 2468, May 2017
Chih-Hsiung Huang, Yu-Shiang Huang, Da-Zhi Chang, Tzo-Tao Lin, and C. W. Liu, “Interface trap density reduction due to AlGeO interfacial layer formation by Al capping on Al2O3/GeOx/Ge stack,” IEEE Transactions on Electron Devices, Vol. 64, No. 4, pp. 1412-1417, Apr. 2017
H.-S. Lan and C. W. Liu, “Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces,” J. Phys. D: Appl. Phys., 50, 13LT02, Feb. 2017
Pin-Shiang Chen, Sheng-Ting Fan, Huang-Siang Lan, C. W. Liu, “Band calculation of lonsdaleite Ge,” J. Phys. D: Appl. Phys., 50, 015107, 2017
Hung-Yu Ye, Huang-Siang Lan, and C. W. Liu, “Electron Mobility in Junctionless Ge Nanowire NFETs,” IEEE Transactions on Electron Devices, Vol. 63, No.11, pp.4191, Oct. 2016
S.-T. Fan, J.-Y. Yan, D.-C. Lai, C. W. Liu, “The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance,” Solid-State Electronics, Volume 122, Pages 13-17, Aug. 2016
Chung-Yi Lin, Chih-Hsiung Huang, Shih-Hsien Huang, Chih-Chiang Chang, C. W. Liu, Yi-Chiau Huan , Hua Chung, Chorng-Ping Chang, “Photoluminescence and electroluminescence from Ge⁄strained GeSn⁄Ge quantum wells,” Appl. Phys. Lett., Vol. 109, 091103, Aug. 2016
X. Zhu, T.-H. Cheng, and C. W. Liu, “Ga Content and Thickness Inhomogeneity Effects on Cu(In, Ga)Se2 Solar Modules,” Electronic Materials Letters, Vol. 12, No. 4, pp 506–511, Jul. 2016
D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu and T. M. Lu, “Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Appl. Phys. Lett., Vol. 108, 233504, Jun. 2016
Chieh Lo, Zheng-Lun Feng, Wei-Lun Huang, C. W. Liu, T. -L. Chen, and C. H. Chou, “Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-film Transistors due to Mobile Sodium,” IEEE J. of Electron Devices Society, Vol. 4, No. 5,, pp. 353-357, May 2016
Chun-Ti Lu, Yu-Shiang Huang and C. W. Liu, “Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance,” J. Phys. D: Appl. Phys., 49, 245105, May 2016
Shi Luo, Carissa Eisler, Tsun-Hsin Wong, Hai Xiao, Chuan-En Lin, Tsung-Ta Wu, Chang-Hong Shen, Jia-Min Shieh, Chuang-Chuang Tsai, C. W. Liu, Harry A. Atwater, William A. Goddard III, Jiun-Haw Lee, Julia R. Greer, “Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation,” Acta Materialia, Volume 106, Pages 171–181, Mar. 2016
T. M. Lu, D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports, 6, 20967, Feb. 2016
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well,” Appl. Phys. Lett., Vol. 106, 092102, 2015
D. Laroche, S.-H. Huang, E. Nielsen, C. W. Liu, J.-Y. Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Appl. Phys. Lett., Vol. 106, 143503, 2015
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen and C. W. Liu, “Junctionless Gate-all-around PFETs using in-situ Boron Doped Ge channel on Si,” IEEE Transaction on Nanotechnology, Vol. 14, No. 5, pp. 878-882, 2015
Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang and C. W. Liu, “Asymmetric Keep-out Zone of Through-Silicon Via using 28nm Technology Node,” IEEE Electron Device Letter, Vol. 36, No. 9, pp. 938-940, 2015
Sun-Rong Jan, Tien-Pei Chou, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov, ““Comments and Corrections Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”,” IEEE Transactions on Electron Devices, Vol. 62, No. 9, pp. 3106, 2015
D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” AIP Advances, 5, 107106, 2015
S.-H. Huang, F.-L. Lu, W.-L. Huang, C.-H. Huang, and C. W. Liu, “The ∼3×1020 cm−3 electron concentration and low specific contact resistivity of phosphorus-doped Ge on Si by in-situ chemical vapor deposition doping and laser annealing,” IEEE Electron Device Letter, Vol. 36, No. 11, pp. 1114-1117, 2015
Yen-Yu Chen, C.-C. Yen, T.-Y. Chang, C. W. Liu, “Enhance light emission from Ge by GeO2 micro hemispheres,” Solid-State Electronics, Volume 110, Pages 83-85, 2015
Hung-Chih Chang, Cheng-Ming Lin, Chih-Hsiung Huang, and C. W. Liu, “Hysteresis Reduction by Fluorine Incorporation into High Permittivity Tetragonal ZrO2 on Ge,” Appl. Phys. Lett, Vol. 104, 032902, 2014
H. -S. Lan and C. W. Liu, “Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors,” Appl. Phys. Lett., Vol. 104, 192101, 2014
I-Hsieh Wong, Yen-Ting Chen, Jhih-Yang Yan, Huang-Jhih Ciou, Yu-Sheng Chen and C. W. Liu, “Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs,” IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 2215, 2014
Wen-Hsien Tu, Shu-Han Hsu, and C. W. Liu, “The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping” IEEE Trans. Electron Device,” IEEE Trans. Electron Device, Vol. 61, No. 7, pp. 2595-2598, 2014
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S.-H. Huang, C. W. Liu, “Effective Electron Mass in High_Mobility SiGe/Si/SiGe Quantum Wells,” JETP Letters, Vol. 100, No. 2, pp. 114-119, 2014
Shi Luo, Jiun-Haw Lee, C. W. Liu, Jia-Min Shieh, Chang-Hong Shen, Tsung-Ta Wu ,D. Jang and Julia R. Greer, “Strength, stiffness,and microstructure of Cu(In,Ga)Se2 thin films deposited viasputtering and co-evaporation,” Appl. Phys. Lett., Vol. 105, 011907, 2014
C.W. Liu, M. Östling, and J.B. Hannon, “New Materials for Post-Si Computing,” MRS Bulletin, Vol. 39, No. 8, pp. 658-662, 2014
Xiaobo Zhu and C. W. Liu, “Fabrication and characterization of Cu(In,Ga)Se2 p-channel thin film transistors,” Appl. Phys. Lett., Vol. 105, 143502, 2014
Tsang-Long Chen, Kuan-Chang Huang, Hsuan-Yi. Lin, C. H. Chou, H. H. Lin, and C. W. Liu, “Enhanced Current Drive of Double Gate α-IGZO Thin Film Transistors,” IEEE Electron Device Letters, Vol. 34, NO. 3, pp. 417-419, 2013
Yen-Yu Chen, H.-C. Chang, Y.-H. Chi, C.-H. Huang, and C. W. Liu, “GeO2 passivation for low surface recombination velocity on Ge surface,” IEEE Electron Device Letters, Vol. 34, NO. 3, pp. 444-446, 2013
Y. -T. Chen, H. -C. Chang, I. -H. Wong, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, and C. W. Liu, “Radiation Impact of EUV on High Performance Ge MOSFETs,” IEEE Electron Device Letters, vol. 34, no. 10, pp. 1220–1222, 2013
Hsin-Ping Wang , Tzu-Yin Lin , Chia-Wei Hsu ,Meng-Lin Tsai , Chih-Hsiung Huang , Wan-Rou Wei ,Ming-Yi Huang , Yi-Jiunn Chien , Po-Chuan Yang , C. W. Liu , Li-Jen Chou , and Jr-Hau He, “Realizing High-Efficiency Omnidirectional N-Type Si Solar Cells Via The Hierarchical Architecture Concept With Radial Junctions,” ACS Nano, 7 (10), pp. 9325–9335, 2013
Wan-Rou Wei , Meng-Lin Tsai , Shu-Te Ho , Shih-Hsiang Tai , Cherng-Rong Ho , Shin-Hung Tsai , C. W. Liu, Ren-Jei Chung , and Jr-Hau He, “Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon Trapping Structures,” Nano Letters, 13 (8), pp. 3658–3663, 2013
Wei Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Ling-Yun Jang and C. W. Liu, “3C-, 4H- and 6H-SiC bulks studied by Si K-edge X-ray absorption,” Mat. Sci. Forum, 740-2, 573-576, 2013
Cheng-Ming Lin, Hung-Chih Chang, I-Hsieh Wong, Shih-Jan Luo, C. W. Liu, and Chenming Hu, “Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness,” Appl. Phys. Lett., Vol. 102, 232906, 2013
Ming-Heng Tsai, Sun-Rong Jan, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov, “Modeling and Optimization of Edge Dislocation Stressors,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 948–950, 2013
C.W. Liu, T.-H. Cheng, Y.-Y. Chen, S.-R. Jan, C.-Y. Chen , S.T. Chan, Y.-H. Nien, Y. Yamamoto, and B. Tillack, “Direct and indirect radiative recombination from Ge,” Thin Solid Films, Vol. 520, pp. 3249–3254, 2012
K.-M. Chen, G.-W. Huang, B.-Y. Chen, C.-S. Chiu, C.-H. Hsiao, W.-S. Liao, M.-Y. Chen, Y.-C. Yang, K.-L. Wang, and C. W. Liu, “LDMOS Transistor High-Frequency Performance Enhancements by Strain,” IEEE Electron Device Letters, Vol. 33, No. 4, pp. 471-473, 2012
W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu, “Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3,” Appl. Phys. Lett., Vol. 100, 023508, 2012
S.-R. Jan, T.-P. Chou, C.-Y. Yeh, C. W. Liu, R. V. Goldstein, V. A. Gorodtsov, and P. S. Shushpannikov, “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias,” IEEE Transactions on Electron Devices, Vol. 59, NO. 3, pp. 777-782, 2012
T.M. Lu, W. Pan, D.C. Tsui, C.-H. Lee, and C.W. Liu, “The fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors,” Physical Review B, Vol. 85, pp. 121307(R), 2012
W.-H Tu, S.-H. Huang, and C.W. Liu, “Ge out diffusion effect on SiGe nanoring formation,” J. Appl. Phys, Vol. 111, 076103, 2012
H.-C. Chang, S. -C. Lu, T.-P. Chou, C.-M. Lin, and C. W. Liu, “First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO2 interface,” J. Appl. Phy.s, Vol. 111, 076105, 2012
S. -H. Huang, T. -M. Lu, S. -C. Lu, C. -H. Lee, C. W. Liu, and D. C. Tsui, “Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures,” Appl. Phys. Lett., Vol. 101, 042111, 2012
H.-C. Sun, Y.-J. Yang, J. Y. Chen, and T.-M. Chao, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “Enhanced recovery of light-induced degradation on the micromorph solar cells by electric field,” J. Appl. Phy.s, Vol. 112, 056104, 2012
W.-H. Tu, C.-H. Lee, H. T. Chang, B.-H. Lin, C.-H. Hsu, S. W. Lee, and C. W. Liu, “A transition of three to two dimensional Si growth on Ge (100) substrate,” J. Appl. Phy.s, Vol. 112, 126101, 2012
C.-M. Lin, Y.-T. Chen, C.-H. Lee, H.-C. Chang, W.-C. Chang, H.-L. Chang, and C. W. Liu, “Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment,” Journal of The Electrochemical Society, Vol. 158, No. 2, H128, 2011
H. -S. Lan, S. -T. Chan and T. -H. Cheng, C. -Y. Chen and S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge substrates,” Appl. Phys. Lett., Vol. 98, 101106, 2011
S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge,” Appl. Phys. Lett., Vol. 98, 141105, 2011
S.-H. Tang, E. Y. Chang, M. Hudait, J.-S. Maa, C. W. Liu, G.-L.Luo, H.-D. Trinh, and Y.-H. Su, “High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate,” Appl. Phys. Lett., Vol. 98, 161905, 2011
Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, “Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates,” Appl. Phys. Lett., Vol. 99, 022106, 2011
Y.-Y. Chen, J. Y. Chen, R.-J. Hsu, W. S. Ho, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation,” Journal of The Electrochemical Society, Vol. 158, No. 9, pp. H912-H914, 2011
W. S. Ho, Y. Deng, Y.-Y. Chen, T.-H. Cheng, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface,” Thin Solid Films, Vol. 520, pp. 448-451, 2011
H. -S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., Vol. 99, 112109, 2011
T.M. Lu, C.-H. Lee, S.-H. Huang, D.C. Tsui, and C.W. Liu, “Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors,” Appl. Phys. Lett., Vol. 99, 153510, 2011
W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu, “Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010
T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu*, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010
T. M. Lu*, C. -H. Lee, D. C. Tsui, and C. W. Liu, “Integration of complementary circuit and two-dimensional electron gas in a Si/SiGe heterostructure,” Appl. Phys. Lett., Vol. 96, 253103, 2010
C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, S237-S240, 2010
S. W. Lee, H. T. Chang, C. -H. Lee, S. L. Cheng and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Films, Vol. 518, pp. S196, 2010
T. -H. Cheng, C. -Y. Ko, C. -Y. Chen, K. -L. Peng, G. -L. Luo, C. W. Liu, and H. -H. Tseng, “Competitiveness between direct and indirect radiative transitions of Ge,” Appl. Phys. Lett., Vol. 96, 091105, 2010
C. -H. Lee, C. W. Liu, H. -T. Chang, and S. W. Lee, “Hexagonal SiGe Quantum Dots and Nanorings on Si(110),” J. Appl. Phys., Vol. 107, 056103, 2010
Yen-Ting Chen, Hung-Chang Sun, Ching-Fang Huang, Ting-Yun Wu, C. W. Liu, Yuan-Jun Hsu, and Jim-Shone Chen, “Capacitorless 1T Memory Cells Using Channel Traps at grain boundaries,” IEEE Electron Device Letters, Vol. 31, No. 10,, pp. 1125, 2010
Wen-Wei Hsu, Chao-Yun Lai, C. W. Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, and Clement H. Wann, “Insulating Halos to Boost Planar NMOSFET Performance,” IEEE Electron Device Letters, Vol. 57, No. 10, pp. 2526, 2010
H.-C. Sun, C.-F. Huang, Y.-T. Chen, T.-Y. Wu, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors,” IEEE Transactions on Electron Devices, Vol. 57, No. 11, pp. 3186, 2010
C.-H. Lin and C. W. Liu, “Metal-Insulator-Semiconductor Photodetectors,” sensors, Vol. 10, No.10, pp. 8797-8826, 2010
W.-L. Hsu, C.-T. Lin, T.-H. Cheng, S.-C. Yen, C. W. Liu, D.-P. Tsai, and G.-R. Lin, “Annealing induced ref inement on optical transmission and electrical resistivity of indium tin oxide,” Chinese Optics Letters, Vol. 7, No. 3, March 10, Mar. 2009
T. M. Lu, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009
S. W. Lee, C. -H. Lee, H. T. Chang, S. L. Cheng and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” Thin Solid Film, Vol. 517, 5029, 2009
W. -L. Hsu, Y. -H. Pai, F. -S. Meng, C. W. Liu, and G. -R. Lin, “Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film,” Appl. Phys. Lett., Vol. 93(23), 231906 - 231906-3, 2009
C.-Y. Peng, Y.-C. Fu, C.-F. Huang, Y.-J. Yang, S.-T. Chang, and C.W. Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal–Oxide–Silicon Capacitors,” IEEE Trans. on Electron Devices, Vol. 56, No. 8, pp. 1736-1745, 2009
W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009
T. M. Lu, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009
C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys., Vol. 105, 083537, 2009
P.-S. Kuo, C.-Y. Peng, C.-H. Lee, Y.-Y. Shen, H.-C. Chang, and C. W. Liu, “Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes,” J. Appl. Phys., Vol. 105, 106107, 2009
C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009
C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett., Vol. 94, 141909, 2009
C.-F. Huang, H.-C. Sun, Y.-J. Yang, C.-Y. Peng, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Dynamic bias instability on p-channel polycrystalline silicon thin-film transistors induced by impact ionization,” IEEE Elec. Dev. Lett., Vol. 30, No. 4, pp. 368-370, 2009
W. S. Ho, C.-H. Lin, T.-H. Cheng, W. W. Hsu, Y. -Y. Chen, P. -S. Kuo, and C. W. Liu, “Narrow-Band Metal-Oxide-Semiconductor Photodetectors,” Appl. Phys. Lett., Vol. 94, 061114, 2009
H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, and C. W. Liu, “Reduction of crosstalk between dual power amplifiers using laser treatment,” IEEE Microwave. Wireless Compon. Lett., Vol. 18, No. 9, pp. 602-604, Sept. 2008
W.-S. Liao, S.-Y. Huang, M.-C. Tang, Y.-G Liaw, K.-M. Chen, Tommy Shih, H.-C. Tsen, L. Chung, and C. W. Liu, “Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining,” Jpn J. Appl. Phys., L3127-3129, Apr. 2008
W.-S. Liao, Y.-G. Liaw, M.-C. Chyuan, K.-M. Chen, S.-Y. Huang, C.-Y. Peng, and C. W. Liu, “PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and High-compressive ILD-SiNx Stressing Layer,” IEEE Electron Device Letters, Vol. 29, No. 1, pp. 86-88, 2008
A. A. Abramov, C.-H. Lin, and C.W. Liu, “Fano interference in the Quantum Well–quantum dot system,” International Journal of Nanoscience, Vol. 7, Nos. 4&5, pp. 181–186, 2008
S.-R. Jan, T.-H. Cheng, T.-A. Hung, P.-S. Kuo, M. H. Liao, Y. Deng, and C. W. Liu, “Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes,” IEEE Trans. on Electron Devices, Vol. 55, No. 12, pp. 3590-3593, 2008
C.-F. Huang, C.-Y. Peng, Y.-J. Yang, H.-C. Sun, H.-C. Chang, P.-S. Kuo, H.-L. Chang, C.-Z. Liu, and C. W. Liu, “Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors,” IEEE Electron Device Letters, Vol. 29, No. 12, pp. 1332-1335, 2008
C.-H. Lin, C.-Y. Yu, C.-C. Chang, C.-H. Lee, Y.-J. Yang, W. S. Ho, Y.-Y. Chen, M. H. Liao, C.-T. Cho, C.-Y. Peng, and C. W. Liu, “SiGe/Si Quantum-Dot Infrared Photodetectors With doping,” IEEE Trans. Nanotech., Vol. 7, No. 5, pp. 558-564, 2008
W.-S. Liao, Y.-G. Liaw, M.-C. Tang, S. Chakraborty, and C. W. Liu, “Investigation of Reliability Characteristics in NMOS and PMOS FinFETs,” IEEE Electron Device Letters, Vol. 29, No. 7, pp. 788-790, 2008
C.-H. Lee, C.-Y. Yu, C. M. Lin, C. W. Liu, H. Lin, and W.-H. Chang, “Carrier gas effects on the SiGe quantum dots formation,” Applied Surface Science, Vol. 254, No. 19, pp. 6257–6260, 2008
S. W. Lee, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition,” Applied Surface Science, Vol. 254, No. 19, pp. 6261-6264, 2008
P. S. Chen, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing,” Applied Surface Science, Vol. 254, No. 19, pp. 6076-6080, 2008
M. H. Liao, Lingyen Yeh, T.-L. Lee, C. W. Liu and M.-S. Liang, “Superior n-MOSFET performance by optimal stress design,” IEEE Electron Device Letters, 29(4), pp. 402-404, 2008
T.-H. Cheng, M. H. Liao, Lingyen Yeh, T.-L. Lee, M.-S. Liang, and C. W. Liu, “Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors,” J. Appl. Phys., Vol. 103, 016103, 2008
W.-C. Hua, H.-L. Chang, T. Wang, C.-Y. Lin, C.-P. Lin, S. S. Lu, C. C. Meng, and C. W. Liu, “Performance Enhancement of the nMOSFET Low Noise Amplifier by Package Strain,” IEEE Trans. on Electron Devices, Vol. 54, No. 1, pp. 160-162, 2007
C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, S. T. Chang, P.-S. Kuo, and C. W. Liu, “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si,” Appl. Phys. Lett., Vol. 90, 012114, 2007
C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W.-S. Ho and C. W. Liu, “Broadband SiGe/Si quantum dot infrared photodetector,” J. Appl. Phys., Vol. 101, No. 3, 033117, 2007
T.-C. Chen, C.-Y. Peng, M. H. Liao, C.-H. Tseng, P.-S. Chen, M.-Y. Chern, and C. W. Liu, “Characterization of the ultra-thin HfO2 and Hf-silicate grown by atomic layer deposition,” IEEE Trans. on Electron Devices, Vol. 54, pp. 759-776, 2007
C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. Liu, “Ge-on-glass Detectors,” Appl. Phys. Lett., Vol. 91, 041105, 2007
P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Transport mechanism of SiGe dot MOS tunneling diodes,” IEEE Electron Device Letters, Vol. 28, No. 7, pp. 596-598, 2007
M. H. Liao, C.-H. Lee, T.-A. Hung, and C. W. Liu, “The intermixing and strain effects on electroluminescence of SiGe dots,” J. Appl. Phys., Vol. 102, 053520, 2007
Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Appl. Phys. Lett., Vol. 91, 102103, 2007
S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced COMS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology,” IEEE Electron Device Letter, Vol. 27, No. 1, pp. 46-48, 2006
J.-Y. Wei, S. Maikap, M. H. Lee, C. C. Lee, and C. W. Liu, “Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices,” Solid State Electronics, Vol. 50, pp. 109-113, 2006
P. S. Chen, S. W. Lee, M. H. Lee and C. W. Liu, “Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs,” Semicond. Sci. Technol, Vol. 21, pp. 479-485, 2006
C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Kuo, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” Thin Solid Films, Vol. 508, pp. 389-392, 2006
F. Yuan, C.-F. Huang, M.-H. Yu, and C. W. Liu, “erformance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain,” IEEE Trans. on Electron Devices, Vol. 53, No. 4, pp. 724-729, 2006
M. H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” IEEE Electron Device Letter, Vol. 27, No.4, pp. 252-254, 2006
M. H. Liao, P.-S. Kuo, S.-R. Jan, S.-T. Chang, C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” Appl. Phys. Lett., Vol. 88, 143509, 2006
J.-W. Shi, P.-H. Chiu, F.-H. Huang, and Y.-S. Wu, Ja-Yu Lu, C.-K. Sun, and C.-W. Liu, P.-S. Chen, “Si/SiGe-Based Edge-Coupled Photodiode with Partially P-Doped Photo-absorption Layer for High Responsivity and High-Power Performance,” Appl. Phys. Lett., Vol. 88, 193506, 2006
S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 120-123, 2006
S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen, P. S. Chen, L. J. Chou, and C. W. Liu, “Field emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 218-221, 2006
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” Jpn. J. Appl. Phys., Part1 Lett., Vol. 45, No. 5A, pp. 4006-4008, 2006
C.-F. Huang, Y.-J. Yang, C.-Y. Peng, F. Yuan, and C. W. Liu, “Mechanical Strain Effect of N-channel Poly-Si Thin-Film Transistors,” Appl. Phys. Lett., Vol. 89, 103502, 2006
C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu, “Low-Temperature Fabrication and characterization of Ge-on-Insulator structures,” Appl. Phys. Lett., Vol. 89, 101913, 2006
C.-Y. Yu, C.-J. Lee, C.-Y. Lee, J.-T. Lee, M. H. Liao, and C. W. Liu, “The Buckling Characteristics of SiGe Layers on Viscous Oxide,” J. of Appl. Phys., Vol. 100, 063510, 2006
M. H. Liao, T.-H. Cheng, and C. W. Liu, “Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes,” Appl. Phys. Lett., Vol. 89, 261913, 2006
C. W. Liu, S. Maikap, and C.-Y. Yu, “(Invited)Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, Vol. 21, No. 3, pp. 21-36, May 2005
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen, C. W. Liu, “SiGe/Si PMOSFET using graded channel technique,” Materials Science in Semiconductor Processing, Vol. 8, pp. 347-351, 2005
C.-Y. Yu, P.-W. Chen, S.-R. Jan, M.-H. Liao, K.-F. Liao, and C. W. Liu, “Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers,” Appl. Phys. Lett., Vol. 86, No. 1, pp. 011909, 2005
T. C. Chen, L. S. Lee, W. Z. Lai and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 209-213, 2005
P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 15-19, 2005
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “SiGe/Si PMOSFET Using Graded Channel Technique,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 347-351, 2005
M.-H. Liao, T. C. Chen, M. J. Chen, and C. W. Liu, “Electroluminescence from metal/oxide/strained-Si tunneling diodes,” Appl. Phys. Lett., Vol. 86, No. 22, 223502, 2005
M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu, “Abnormal hole mobility of biaxial strained Si,” J. Appl. Phys, Vol. 98, pp. 066104, 2005
W.-C. Hua, M. H. Lee, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Treading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs,” IEEE Electron Device Letter, Vol. 26, No. 9, pp. 667-669, 2005
21. K. F. Liao, S. W. Lee, L. J. Chen, P. S. Chen, and C. W. Liu, “Formation of thin relaxed SiGe buffer layer with H-implantation dose and thermal annealing,” Nuclear Inst. and Methods in Physics Research, B, Vol. 237, No. 1-2, pp. 217-222, 2005
S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yGey layer,” J. Vac. Sci. Tech, A, Vol. 23, No. 4, pp.1141-1145, 2005
C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, “Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate,” IEEE Electron Device Letter, Vol. 26, No. 10, pp. 761-763, 2005
S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M.-J. Tsai, and C. W. Liu, “Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys, Vol. 98, pp. 073506, 2005
W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, and K. M. Chen, “Ge Outdiffusion Effect on Flicker Noise in Strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 10, pp. 693-695, 2004
J.-W. Shi, Z. Pei, F. Yuan, Y.-M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Performance Enhancement of High-Speed SiGe Based Heterojunction Phototransistor with Substrate Terminal,” Appl. Phys. Lett., Vol. 85, No. 14, pp. 2947-2949, 2004
B.-C. Hsu, C.-H. Lin, P.-S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum-Dot Infrared Photodetectors,” IEEE Electron Device Letters, Vol. 25, No. 8, pp. 544-546, 2004
S. T. Chang, C. W. Liu, and S. C. Lu, “Base Transit Time of Graded-Base Si/SiGe HBTs Considering Recombination Lifetime and Velocity Saturation,” Solid State Electronics, Vol. 48, No. 2, pp. 207-215, 2004
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, W. Y. Chen, and T. M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” Applied Surface Science, Vol. 224, No. 1-4, pp. 152-155, 2004
S. W. Lee, P. S. Chen, M.-J. Tsai , C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Film, Vol. 447-448, pp. 302-305, 2004
C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap, “Evidence of Si/SiGe heterojunction roughness scattering,” Appl. Phys. Lett., Vol. 85, No. 21, pp. 4947-4949, 2004
Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, “The evolution of electroluminescence in Ge quantum-dot diodes with the fold number,” Appl. Phys. Lett., Vol. 85, No. 25, pp. 6107-6109, 2004
P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition,” Electrochemical and Solid-State Letters, Vol. 7, No. 10, pp. G201-G203, 2004
C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole effective mass in strained Si1-xCx alloys,” J. Appl. Phys., Vol. 96, No. 9, pp. 5037-5041, 2004
J.-W. Shi, Y.-H. Liu, and C. W. Liu, “Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors,” IEEE/OSA, Journal of Lightwave Technology, Vol. 22, No. 6, pp. 1583-1590, 2004
F. Yuan, J.-W. Shi, Z. Pei, and C. W. Liu, “MEXTRAM Modeling of Si/SiGe Heterojunction Phototransistors,” IEEE Trans. Electron Devices, Vol. 51, No. 6, pp. 870-876, 2004
S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 1, pp. 483-485, 2004
Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M.-J. Tsai, and C. W. Liu, “Bandwidth Enhancement in an Integratable SiGe phototransistor by Removal of Excessive Carrier,” IEEE Electron Device Letters, Vol. 25, No. 5, pp. 286-288, 2004
W.-C. Hua, T.-Y. Yang, and C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” Applied Surface Science, Vol. 224, No. 1-4, pp. 425-428, 2004
T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, “Light Emission From Al/HfO2/Silicon Diodes,” J. Appl. Phys., Vol. 95, No. 11, pp. 6486-6488, 2004
F. Yuan, S.-R. Jan, S. Maikap, Y.-H. Liu, C.-S. Liang, and C. W. Liu, “Mechanically strained Si/SiGe HBTs,” IEEE Electron Device Letters, Vol. 25, No. 7, pp. 483-485, 2004
6. S. W. Lee, P. S. Chen, M.-J. Tsai , C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Film, Vol. 447-448,, pp. 302-305, 2004
7. C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap, “Evidence of Si/SiGe heterojunction roughness scattering,” Appl. Phys. Lett., Vol. 85 No. 21, pp. 4947-4949, 2004
8. Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, “The evolution of electroluminescence in Ge quantum-dot diodes with the fold number,” Appl. Phys. Lett.,, Vol. 85, No. 25, pp. 6107-6109, 2004
9. P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition,” Electrochemical and Solid-State Letters, Vol. 7, No. 10, pp. G201-G203, 2004
C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole effective mass in strained Si1-xCx alloys,” J. Appl. Phys, Vol. 96, No. 9, pp. 5037-5041, 2004
J.-W. Shi, Y.-H. Liu, and C. W. Liu, “Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors,” IEEE/OSA, Journal of Lightwave Technology, Vol. 22, No. 6, pp. 1583-1590, 2004
F. Yuan, J.-W. Shi, Z. Pei, and C. W. Liu, “MEXTRAM Modeling of Si/SiGe Heterojunction Phototransistors,” IEEE Trans. Electron Devices, Vol. 51, No. 6, pp. 870-876, 2004
S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 1, pp. 483-485, 2004
Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M.-J. Tsai, and C. W. Liu, “Bandwidth Enhancement in an Integratable SiGe phototransistor by Removal of Excessive Carrier,” IEEE Electron Device Letters, Vol. 25, No. 5, pp. 286-288, 2004
W.-C. Hua, T.-Y. Yang, and C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” Applied Surface Science, Vol. 224, No. 1-4, pp. 425-428, 2004
T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, “Light Emission From Al/HfO2/Silicon Diodes,” J. Appl. Phys, Vol. 95, No. 11, pp. 6486-6488, 2004
F. Yuan, S.-R. Jan, S. Maikap, Y.-H. Liu, C.-S. Liang, and C. W. Liu, “Mechanically strained Si/SiGe HBTs,” IEEE Electron Device Letters, Vol. 25, No. 7,, pp. 483-485, 2004
Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor,” IEEE Electron Device Letter, Vol. 24, No. 10, pp. 643-645, 2003
M. H. Lee, C.-Y. Yu, F. Yuan, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Reliability Improvement of Rapid Thermal Oxide Using Gas Switching,” IEEE Trans. Semiconductor Manufacturing, Vol. 16, No. 4, pp. 656-659, 2003
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled Nanorings in Si-capped Ge quantum dots on (001) Si,” Appl. Phys. Lett., Vol. 85, No. 23, pp. 5283-5285, 2003
M.-J. Chen, J.-F. Chang, J.-L. Yen, C. S. Tsai, E.-Z. Liang, C.-F. Lin, and C. W. Liu, “Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes,” J. Appl. Phys., Vol. 93, No. 7, pp. 4253-4259, 2003
B.-C. Hsu, S. T. Chang, T.-C. Chen, P.-S. Kuo, P. S. Chen, and C. W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetector,” IEEE Electron Device Letter, Vol. 24, No. 5, pp. 318-320, 2003
C. W. Liu, B.-C. Hsu, K.-F. Chen, M. H. Lee, C.-R. Shie, and P.-S. Chen, “Strain-induced growth of SiO2 dots by liquid phase deposition,” Appl. Phys. Lett., Vol. 82, No. 4, pp. 589-591, 2003
C.-H. Lin, F. Yuan, B.-C Hsu, and C. W. Liu, “Isotope effect of hydrogen release in metal/ oxide/n-silicon tunneling diodes,” Solid-State Electronics, Vol. 47, pp. 1123-1126, 2003
B.-C. Hsu, W.-C. Hua, C.-R. Shie, K.-F. Chen, and C. W. Liu, “The Growth and Electrical Characteristics of Liquid Phase Deposition SiO2 on Ge,” Electrochemical and Solid State Letters, Vol. 6, No. 2, pp. F9-F11, 2003
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled Nanorings in Si-capped Ge quantum dots on (001) Si,” Appl. Phys. Lett, Vol. 85, No. 23, pp. 5283-5285, 2003
B.-C. Hsu, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Oxide Roughness Effect on Tunneling Current of MOS Diodes,” IEEE Trans. Electron Device, pp. 2204-2208, pp. 2204-2208, 2002
C.-H. Lin, F. Yuan, C.-R. Shie, K.-F. Chen, B.-C. Hsu, M. H. Lee, and C. W. Liu, “Roughness- Enhanced Reliability of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol. 23, No. 7, pp. 431-433, 2002
S. T. Chang, C. Y. Lin, and C. W. Liu, “Energy Band Structure of Strained Si1-xCx alloys on Si(001) Substrate,” J. Appl. Phys., Vol. 92, No. 7, pp. 3717-3723, 2002
S. T. Chang, K.-F. Chen, C.-R. Shie, C. W. Liu, M.-J. Chen, and C.-F. Lin, “The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates,” Solid State Electronics, Vol. 46, No. 8, pp. 1113-1116, 2002
M. H. Lee, K.-F. Chen, C.-C. Lai, C. W. Liu, W.-W. Pai, M.-J. Chen and C.-F. Lin, “The roughness-enhanced light emission from metal- oxide-silicon light-emitting diodes using very high vacuum prebake,” Part2 Lett., Jpn. J. Appl. Phys., Vol. 41, No. 3B, pp. L326-L328, 2002
Novel Methods to Incorporate Deuterium in the MOS Structures, “Novel Methods to Incorporate Deuterium in the MOS Structures,” IEEE Electron Device Letters, Vol. 22, No. 11, pp. 519-521, 2001
M.-J. Chen, C.-F. Lin, M. H. Lee, S. T. Chang, and C. W. Liu, “Carrier life time measurements on Electroluminescent Metal-Oxide-Silicon Tunneling Diodes,” Appl. Phys. Lett., Vol. 79, No. 14, pp. 2264-2266, 2001
C.-H. Lin, B.-C. Hsu, M. H. Lee, and C. W. Liu, “A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes,” IEEE Trans. Electron Device, Vol. 48, No. 9, pp. 2125-2130, 2001
B.-C. Hsu, W. T. Liu, C.-H. Lin, and C. W. Liu, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron Device, Vol. 48, No. 8, pp. 1747-1749, 2001
M. H. Lee and C. W. Liu, “A Novel Illuminator Design in a Rapid Thermal Process,” IEEE Trans. Semiconductor Manufacturing, Vol. 14, No. 2, pp. 152-156, 2001
C. W. Liu, C.-H. Lin, M. H. Lee, S. T. Chang, Y. H. Liu, M.-J. Chen, and C.-F. Lin, “Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation,” Appl. Phys. Lett., Vol. 78, No. 10, pp. 1397-1399, 2001
C.-F. Lin, M.-J. Chen, S.-W. Chang, P.-F. Chung, E.-Z. Liang, T.-W. Su, and C. W. Liu, “Electroluminescence at Si Bandgap Energy from Mechanically Pressed ITO/Si Contact,” Appl. Phys. Lett., Vol. 78, No. 13, pp. 1808-1810, 2001
C.-H. Lin, M. H. Lee, and C. W. Liu, “Correlation between Si-H/D bond desorption and injected electron energy in MOS tunneling diodes,” Appl. Phys. Lett., Vol. 78, No. 5, pp. 637-639, 2001
M.-J. Chen, C.-F. Lin, W. T. Liu, S. T. Chang, and C. W. Liu, “Visible and Band-Edge Electroluminescence from ITO/SiO2/Si metal oxide semiconductor structures,” J. Appl. Phys., Vol. 89, No. 1, pp. 323-326, 2001
C.-F. Lin, M.-J. Chen, E.-Z. Liang, W. T. Liu, and C. W. Liu, “Reduced temperature dependence of luminescence from Silicon due to Field-Induced Carrier Confinement,” Appl. Phys. Lett., Vol. 78, No. 3, pp. 261-263, 2001
C. W. Liu and Y. D. Tseng, and M. Y. Chern, “Asymmetrical x-ray reflection of SiGeC/Si Heterostructures,” Materials Chemistry and Physics, Vol. 69, No. 1-3, pp. 274-277, 2001
C. W. Liu, S. T. Chang, W. T. Liu, M.-J. Chen, and C.-F. Lin, “Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 26, pp. 4347-4349, 2000
C. W. Liu, M. H. Lee, S. T. Chang, M.-J. Chen, and C.-F. Lin, “Room-temperature electroluminescence from the metal oxide silicon tunneling diodes on (110) substrates,” Jpn. J. Appl. Phys., Vol. 39, No. 10B, pp. L1016 - L101, 2000
C. W. Liu, M. H. Lee, M.-J. Chen, C.-F. Lin, and M. Y. Chern, “Roughness-Enhanced Electroluminescence from Metal Oxide Silicon Tunneling Diodes,” IEEE Electron Device Letters, Vol. 21, No. 12, pp. 601-603, 2000
C. W. Liu, M.-J. Chen, I. C. Lin, M. H. Lee, and C.-F. Lin, “Temperature dependence of the electron-hole-plasma electroluminescence from the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 8, pp. 1111- 1113, 2000
C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Letters, Vol. 21, No. 6, pp. 307-309, 2000
C. W. Liu and T. X. Hsieh, “Analytical modeling of the subthreshold behavior in MOSFETs,” Solid State Electronics, Vol. 44, No. 9, pp. 1707-1710, 2000
C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Infrared Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon,” Journal of Physics: Condensed Matter, Vol. 12, No. 11, pp. L205-L210, 2000
C. W. Liu, Y. H. Huang, C. Y. Chen, S. Gurtler, C. C. Yang, Y. Chang, and L. P. Chen, “Infrared absorption study of laser induced oxide on Si and SiGe layers,” Material Chemistry and Physics, Vol. 65, No. 3, pp. 350-353, 2000
C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Electroluminescence at Si Bandgap Energy Based on Metal-oxide-silicon Structures,” J. Appl. Phys., Vol. 87, No. 12, pp. 8793-8795, 2000
C. W. Liu, M. H. Lee, M.-J. Chen, I. C. Lin, and C-F Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 76, No. 12, pp. 1516-1518, 2000
C. Y. Chen, K. J. Ma, Y. S. Lin, C. W. Liu, C. Y. Chao, S. Gu, C. W. Hsu, and C. C. Yang, “Formation of Silicon Surface Grating with High Pulse-Energy UV Laser,” J. Appl. Phys., Vol. 88, No. 11, pp. 6162-6169, 2000
C. W. Liu, Y. D. Tseng, and Y. S. Huang, “Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition,” Appl. Phys. Lett., Vol. 75, No. 15, pp. 2271-2273, 1999
C. W. Liu, Y. D. Tseng, M. Y. Chern, C. L. Chang, and J. C. Sturm, “Thermal Stability of Si/SiGeC/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition,” J. Appl. Phys., Vol. 85, No. 4, pp. 2124-2128, 1999
C. Y. Lin, C. W. Liu, and L. J. Lee, “Valence Band Properties of Relaxed Ge1-xCx Alloys,” Material Chemistry and Physics, Vol. 52, No. 1, pp. 31-35, 1998
C. W. Liu and J. C. Sturm, “Low Temperature Chemical Vapor Deposition of -SiC on (100) Si Using Methylsilane and Device Characteristics,” J. Appl. Phys., Vol. 82, No. 9, pp. 4558-4565, 1997
C. Y. Lin and C. W. Liu, “Hole Effective Masses of Si1-xCx and Si1-yGey alloys,” Appl. Phys. Lett., Vol. 70, No. 11, pp. 1441-1443, 1997
C. W. Liu and V. Venkataraman, “Growth and Electron Effective Mass Measurements of Strained Si and Si0.94Ge0.06 on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition,” Material Chemistry and Physics, Vol. 49, No. 1, pp. 29-32, 1997
C. Y. Chao, C. Y. Chen, C. W. Liu, Y. Chang, and C. C. Yang, “Direct Writing of Silicon Grating with Highly Coherent UV Laser,” Appl. Phys. Lett., Vol. 71, No. 17, pp. 2442-2444, 1997
C. W. Liu, St. A. Amour, J. C. Sturm, Y. Lacroix, M. L. W Thewalt, C. W. Magee, and D. Eaglesham, “Growth and Photoluminescence of High Quality SiGeC Alloy Layers on Si (100) Substrates,” J. Appl. Phys., Vol. 80, No. 5, pp. 3043-3047, 1996
L. D. Lanzerotti, A. St. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, and N. D. Theodore, “Si/Si1-x-yGexCy/Si Heterojunction Bipolar Transistors,” IEEE Electron Device Letters, Vol. 17, No. 7, pp. 334-337, 1996
St. A. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, and M. L. W Thewalt, “Defect-Free Band-Edge Photoluminescence and Bandgap Measurement of Pseudomorphic SiGeC Alloy Layers on Si (100),” Appl. Phys. Lett., Vol. 67, No. 26, pp. 3915-3917, 1995
M. H. Liao, T.-H. Cheng, C. W. Liu, Lingyen Yeh, T.-L. Lee, and M.-S. Liang, “2�慆 electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction,” J. Appl. Phys., Vol. 103, 013105
Conference & proceeding papers:
Chung-En Tsai, Chih-Hsiung Huang, Yu-Rui Chen, Chien-Te Tu, Yu-Shiang Huang, and C. W. Liu, “600 meV Effective Work Function Tuning by Sputtered WNx Films,” 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu, “Infrared Response of Stacked GeSn Transistors,” 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
Sheng-Ting Fan, Yun-Wen Chen, Pin-Shiang Chen, and C. W. Liu, “Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2,” 2020 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2020
C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Yi-Chun Liu and Hung-Yu Ye, “Stacked high mobility channel transistors,” China Semiconductor Technology International Conference (CSTIC) 2020, Shanghai, China, Mar. 2020
Min-Hung Lee, Kuan-Ting Chen, Chun-Yu Liao, Guo-Yu Siang, Chieh Lo, Hong-Yu Chen, Yi-Ju Tseng, Chung-Yu Chueh, Ching Chang, Yen-Yun Lin, Yu-Jun Yang, F-C Hsieh, Shu-Tong Chang, Ming-Han Liao, Kai-Shin Li, and C. W. Liu, “Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs,” International Electron Devices Meeting (IEDM) 2019, p.23-6, San Francisco, USA, Dec. 2019
Jih-Chao Chiu, Ya-Jui Tsou, Huan-Chi Shih, and C. W. Liu, “Write Error Rate Prediction of STT-pMTJ Considering Process Variations and Thermal Fluctuations,” IEDM MRAM Poster, San Francisco, California, USA, Dec. 2019
Ya-Jui Tsou, Chia-Che Chung, Jih-Chao Chiu, Huan-Chi Shih, and C. W. Liu, “Thermal and Reliability Modeling of FinFET-Driven STT-pMTJ Array Considering Mutual Coupling, 3D Heat Flow, and BEOL Effects,” IEDM MRAM Poster, San Francisco, California, USA, Dec. 2019
Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, Hsiao-Hsuan Liu, Chung-Yi Lin, Yi-Chun Liu, and C. W. Liu, “First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 A at VOV=VDS=0.5V and Record Gm,max(S/m)/SSSAT(mV/dec) = 8.3 at VDS=0.5V,” International Electron Devices Meeting (IEDM) 2019, p.29-3, San Francisco, USA, Dec. 2019
Yu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Hung-Yu Ye, Yi-Chun Liu, Fang-Liang Lu, and C. W. Liu, “First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58A at VOV=VDS= -0.5V, Record Gm,max of 172S at VDS= -0.5V, and Low Noise,” International Electron Devices Meeting (IEDM) 2019, p.29-5, San Francisco, USA, Dec. 2019
Chung-En Tsai, Chih-Hsiung Huang, Yu-Rui Chen, Yi-Chun Liu, and C. W. Liu, “Effective Work Function Tuning of Stacked WNx Films by Sputtering,” 50th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 2019
C. W. Liu, Yi-Chun Liu, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye, “Vertical Stacked High Mobility Channel Transistor,” International Workshop on the Physics of Semiconductor Devices, Kolkata, India, Dec. 2019
C. W. Liu, Chung-En Tsai, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye, “GeSn CVD epitaxy and transistors,” 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, Nov. 2019
C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, “Vertically stacked n channel and p channel transistors,” Electrochemical Society Fall meeting 2019, Atlanta, Georgia, USA, Oct. 2019
Chung-En Tsai, Fang-Liang Lu, Shih-Ya Lin, and C. W. Liu, “Temperature Effects in In-situ B-doped Epi-GeSn Layers on Si by CVD,” 2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA, Jun. 2019
Hung-Yu Ye and C. W. Liu, “Scattering Mechanisms in High Electron Mobility Si/SiGe Quantum Well nFETs,” 2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA, Jun. 2019
C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, “Vertically stacked GeSi/GeSn channel transistors,” 2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA, Jun. 2019
Fang-Liang Lu, Chung-En Tsai, Chih-Hsiung Huang, Hung-Yu Ye, Shih-Ya Lin, C. W. Liu, “Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD With Low Thermal Budget (≤400℃) and Without Ga,” 2019 Symposia on VLSI Technology and Circuits, p. T14-2, Kyoto, Japan, Jun. 2019
Chia-Che Chung and C. W. Liu, “FinFET Thermal Modeling and Circuit Thermal Simulation,” JST-MOST Joint Workshop, Jun. 2019
Yu-Shiang Huang, Hung-Yu Ye, Fang-Liang Lu, Yi-Chun Liu, Chien-Te Tu, Chung-Yi Lin, Shih-Ya Lin, Sun-Rong Jan, C. W. Liu, “First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3A at VOV=VDS=-0.5V, Gm of 50.2S at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching,” 2019 Symposia on VLSI Technology and Circuits, p.T14-3, Kyoto, Japan, Jun. 2019
Emmanuele Galluccio, Gioele Mirabelli, Dan O’Connell, Jessica Anne Doherty, Nikolay Petkov, Justin D. Holmes, Shih-Ya Lin, Fang-Liang Lu, C. W. Liu, and Ray Duffy, “Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08,” 5th joint EUROSOI – ULIS 2019 Conference, Grenoble, France, Apr. 2019
Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, Ya-Jui Tsou, Yi-Chun Liu, Chien-Te Tu, and C. W. Liu, “Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and Ion/Ioff=1.2E7,” 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2019
Ya-Jui Tsou, Zong-You Luo, Chia-Che Chung, and C. W. Liu, “Thermal Modeling of FinFET-Driven Spin-Orbit Torque MRAM Considering Thermal Coupling and BEOL Effects,” IEDM MRAM workshop, San Francisco, California, Dec. 2018
Zong-You Luo, Ya-Jui Tsou, and C. W. Liu, “Field-Free Spin-Orbit Torque Switching of pMTJ Utilizing Voltage-Controlled Magnetic Anisotropy and STT,” IEDM MRAM workshop, San Francisco, California, Dec. 2018
M. H. Lee, K.-T. Chen, C.-Y. Liao, S.-S. Gu, G.-Y. Siang, Y.-C. Chou, H.-Y. Chen, J. Le, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, P.-G. Chen, M. Tang, Y.-D. Lin, H.-Y. Lee, K.-S. Li, and C. W. Liu, “Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs,” IEEE International Electron Devices Meeting (IEDM), San Francisco, California, Dec. 2018
Fang-Liang Lu, Chung-En Tsai, Shih-Ya Lin, and C. W. Liu, “In-situ B-doped Epi-GeSn Layers on Ge-buffered Si by Chemical Vapor Deposition with High Activation (4.9x1020cm-3), High Sn Content (14%), and High Growth Rate Enhancement (24x),” 49th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2018
Hung-Yu Ye, Chia-Che Chung, and C. W. Liu, “Electron Mobility Enhancement by Tensile Strain in Germanium Nanowire NFETs considering surface roughness, channel dopant charge, interface charge, and phonon scattering,” 49th IEEE Semiconductor Interface Specialists Conference(SISC), San Diego, CA, Dec. 2018
Chia-Chun Yen, An-Hung Tai, and C. W. Liu, “Quantitative Analysis of Interface Quality in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistors,” International Electron Devices and Materials Symposium (IEDMS 2018), Keelung, Taiwan, Nov. 2018
(invited) C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye, “Ge/GeSn processes and transistor applications,” Americas International Meeting on Electrochemistry and Solid State Science (AiMES), Cancun, Mexico, Sept. 2018
Jhih-Yang Yan, Chia-Che Chung, Sun-Rong Jan, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Comprehensive Thermal SPICE Modeling of FinFETs and BEOL with Layout Flexibility Considering Frequency Dependent Thermal Time Constant, 3D Heat Flows, Boundary/Alloy Scattering, and Interfacial Thermal Resistance with Circuit Level Reliability Evaluation,” Symposium on VLSI Technology (VLSI-Technology), Honolulu , Hawaii, Jun. 2018
(invited) C. W. Liu, “Innovation enabling the semiconductor roadmap (半導體的創新之路),” 2018 ACS Industrial Forum: Semiconductor (2018 ACS 產業論壇-根植台灣:半導體產業的串連與革新), Hsinchu, Taiwan, Jun. 2018
Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Dopant Effects in Epitaxial GeSn Layers on Si by CVD,” 1st Joint ISTDM / ICSI 2018 Conference, Potsdam (Berlin), Germany, May 2018
Chih-Hsiung Huang, Da-Zhi Chang, and C. W. Liu, “Annealing Effects on Al2O3/GeOx/Ge Stack with Al and Pt Electrodes,” 1st Joint ISTDM / ICSI 2018 Conference, Potsdam (Berlin), Germany, May 2018
Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, Huang-Siang Lan, C. W. Liu, “Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence,” 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, Apr. 2018
Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, and C. W. Liu, “BEOL TDDB Reliability Modeling and Lifetime Prediction Using Critical Energy to Breakdown,” IEEE International Reliability Physics Symposium, Burlingame, CA, Mar. 2018
Matthew Freeman, Tzu-Ming Lu, Yen Chuang, Jiun-Yun Li, C. W. Liu, Jeremy Curtis, and Lloyd Engel, “Microwave Spectroscopy of Resistive Film Gated Higfets and Mosfets,” APS March Meeting, Los Angeles, CA, Mar. 2018
19. M. H. Lee, P.-G. Chen, S.-T. Fan, Y.-C. Chou, C.-Y. Kuo, C.-H. Tang, H.-H. Chen, S.-S. Gu, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, C.-Y. Liao, K.-T. Chen, S. T. Chang, M.-H. Liao, K.-S. Li, and C. W. Liu, “Ferroelectric Al:HfO2 Negative Capacitance FETs,” International Electron Devices Meeting (IEDM), p.565-568, San Francisco, Dec. 2017
Chung-Yi Lin, H.-S Lan, and C. W. Liu, “Photoluminescence and electroluminescence of strained GeSn quantum wells,” 48th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2017
Fang-Liang Lu, Chung-En Tsai, Pin-Shiang Chen, and C. W. Liu, “Doping Effects on Sn Loss in Epi-GeSn on Si by CVD,” 48th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2017
Yu-Shiang Huang, Fang-Liang Lu, Ya-Jui Tsou, Chung-En Tsai, Chung-Yi Lin, Chih-Hao Huang, and C. W. Liu, “First Vertically Stacked GeSn Nanowire pGAAFETs with Ion=1850mA/mm (VOV=VDS=-1V) on Si by GeSn/Ge CVD Epitaxial Growth and Optimum Selective Etching,” International Electron Devices Meeting (IEDM), p.832-835, San Francisco, Dec. 2017
(invited) C. W. Liu, I-H. Wong, F.-L. Lu, and Y.-S. Huang, “Epitaxial Ge/GeSn high mobility channel transistors,” 232nd Meeting of Electrochemical Society, National Harbor, MD, Oct. 2017
Chia-Chun Yen, Zheng-Lun Feng, Chung-Sung Liao, and C. W. Liu, “Effects of Oxygen Flow Rate on the Reliability of Dual Channel Amorphous InGaZnO Thin Film Transistors,” International Electron Devices and Materials Symposium (IEDMS 2017), Hsinchu, Taiwan, Sept. 2017
Chia-Chun Yen, Zheng-Lun Feng, and C. W. Liu, “Reliability Study of Amorphous InGaZnO Thin-film Transistors,” The 6th International Symposium on Next-Generation Electronics (ISNE 2017), Keelung, Taiwan, May 2017
Fang-Liang Lu, Chung-En Tsai, Shih-Ya Lin, Chih-Chiang Chang, and C. W. Liu, “In-situ P-doped and B-doped epi-GeSn on thin Ge buffer layers on Si with low contact resistivity of 1.1x10-6 (GeSn:P) and 1.9x10-8 (GeSn:B) Ω-cm2,” 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May 2017
Meng-Chin Lee, Chun-Ti Lu, C. W. Liu, “Simulation of Interdigitated Back Contact Silicon Heterojunction Solar Cells,” 24th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, Apr. 2017
(invited) C. W. Liu, Fang-Liang Lu, Yu-Shiang Huang, I-Hsieh Wong, “High Performance Ge and GeSn Epi Channels,” materials research society (MRS) spring meeting & exhibit, Phoenix, Arizona, Apr. 2017
M. H. Lee, S.-T. Fan , C.-H. Tang , P.-G. Chen, Y.-C. Chou , H.-H. Chen , J.-Y. Kuo , M.-J. Xie, S.-N. Liu , M.-H. Liao , C.-A. Jong , K.-S. Li , M.-C. Chen , and C. W. Liu, “Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs,” International Electron Devices Meeting (IEDM), p.306-309, San Francisco, Dec. 2016
I-Hsieh Wong, Fang-Liang Lu, Shih-Hsien Huang, Hung-Yu Ye, Chun-Ti Lu, Jhih-Yang Yan, Yu-Cheng Shen, Yu-Jiun Peng, Huang-Siang Lan, and C. W. Liu, “High Performance Ge Junctionless Gate-all-around NFETs with Simultaneous Ion =1235 mA/mm at VOV=VDS=1V, SS=95 mV/dec, high Ion/Ioff=2E6, and Reduced Noise Power Density using S/D Dopant Recovery by Selective Laser Annealing,” International Electron Devices Meeting (IEDM), p.842-845, San Francisco, Dec. 2016
Yu-Shiang Huang, Chih-Hsiung Huang, Fang-Liang Lu, Chung-Yi Lin, Hung-Yu Ye,I-Hsieh Wong, Sun-Rong Jan, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “Record High Mobility (428cm2/V-s) of CVD-grown Ge/Strained Ge0.91Sn0.09 /Ge Quantum Well p-MOSFETs,” International Electron Devices Meeting (IEDM), p.822-825, San Francisco, Dec. 2016
Jhih-Yang Yan, Sun-Rong Jan, Yu-Jiun Peng, H. H. Lin, W. K. Wan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang, and C. W. Liu, “Thermal Resistance Modeling of Back-end Interconnect and Intrinsic FinFETs, and Transient Simulation of Inverters with Capacitive Loading Effects,” International Electron Devices Meeting (IEDM), p.898-901, San Francisco, Dec. 2016
Chung-Yi Lin, Fang-Liang Lu, C. W. Liu, Yi-Chiau Huang, Hua Chung, and Chorng-Ping Chang, “Passivation and photo/electro luminescence of Ge/GeSn/Ge quantum wells,” 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2016
Fang-Liang Lu, I-Hsieh Wong, Shih-Hsien Huang, and C. W. Liu, “Tensile strain recovery and dopant re-activation using laser annealing,” 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 2016
Chia-Chun Yen, Zheng-Lun Feng, C. W. Liu, “Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO Thin-film Transistors by Gate Control,” International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, Taiwan, Nov. 2016
(invited) C. W. Liu, Jhih-Yang Yan, and Sun-Rong Jan, “Modeling and Simulation of TSV Induced Keep-out Zone Using Silicon Data,” 13th International Conference on Solid-State Integrated Circuit & Technology (ICSICT 2016), Hangzhou, China, Oct. 2016
(invited) C. W. Liu, F.-L. Lu, S.-H. Huang, “Heavily Phosphorus-doped Si and Ge by Chemical Vapor Deposition,” 21st International Conference on Ion Implantation Technology, Tainan, Taiwan, Sept. 2016
F. -L. Lu, S. -H. Huang, and C. W. Liu, “Heavily Phosphorus-doped Si0.1Ge0.9 and Ge on Si with Low Contact Resistivity by Chemical Vapor Deposition and Laser Annealing,” 8th International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jun. 2016
S.-H. Huang, F.-L. Lu, S. V. Kravchenko, and C. W. Liu, “Record High Electron Mobility of 2.4 × 106 cm2/V s in Strained Si by Ultra-low Background Doping,” 8th International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jun. 2016
Yu-Shiang Huang, Chih-Hao Huang, Chih-Hsiung Huang, Fang-Liang Lu, Da-Zhi Chang, Chung-Yi Lin, I-Hsieh Wong, Sun-Rong Jan, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs,” 22th IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, Jun. 2016
Chih-Hsiung Huang, Sheng-Ting Fan, Pin-Shiang Chen, Raman Sankar, F. C. Chou and C. W. Liu, “Atomically Flat Metal-Insulator-Metal Capacitors with Enhanced Linearity,” 22th IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, Jun. 2016
X. Zhu, T.-H. Cheng, and C. W. Liu, “Strain-enhanced Inhomogeneity Effects on CIGS Solar Modules,” The 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, May 2016
D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” APS March Meeting, Baltimore, Maryland, Mar. 2016
T. M. Lu, D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, and C. W. Liu, “Electron bilayers in an undoped Si/SiGe double-quantum-well heterostructure,” APS March Meeting, Baltimore, Maryland, Mar. 2016
Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, C. W. Liu, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, and M.-T. Yang, “Compact Modeling and Simulation of TSV with Experimental Verification,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016
S. -H. Huang, F. -L. Lu, and C. W. Liu, “Low Contact Resistivity (1.5×10-8 Ω-cm2) of Phosphorus-doped Ge by In-situ Chemical Vapor Deposition Doping and Laser Annealing,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016
Chih-Hsiung Huang, Yu-Shiang Huang Tzu-Yao Lin, and C. W. Liu, “Reduced Interface Trap Density by Al Capping on Al2O3 Stack on Ge,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2015
Yu-Shiang Huang, Chih-Hsiung Huang, Chung-Yi Lin and C. W. Liu, “Enhanced performance of Y-GeO2/Ge Gate Dielectric by O2 Post-deposition Annealing and Al Capping,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2015
Chung-Yi Lin, Shih-Hsien Huang, Chun-Ti Lu, C. W. Liu, ,Yi-Chiau Huang, Hua Chung, and Chorng-Ping Chang, “Surface Passivation of Ge/GeSn/Ge Using Atomic Layer Deposited SiO2 and Al2O3,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2015
Xiaobo Zhu and C. W. Liu, “Effects of fluctuation on Cu(In,Ga)Se2 solar modules using 3D simulation,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25), Busan, Korea, Nov. 2015
Chun-Ti Lu, Wenchao Wu and C. W. Liu, “3D Simulation and Analysis of Crystalline Silicon Solar Cell-to-Module Optical Gain,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25), Busan, Korea, Nov. 2015
C.W. Liu, I.-H. Wong, S.-H. Huang, C.-H. Huang and S.-H. Hsu, “Advanced Germanium Channel Transistors,” 11th International Conference on ASIC (ASICON 2015), Chengdu, China, Nov. 2015
C. W. Liu, Shih-Hsien Huang, and I-Hsieh Wong, “High mobility Si and Ge,” SemiconNano, Hsinchu, Taiwan, Sept. 2015
Fang-Liang Lu, Shih-Hsien Huang, C. W. Liu, “High electrically active phosphorus concentration and low contact resistance of Ge on Si by in-situ doping and laser annealing,” 22nd Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, Sept. 2015
C. W. Liu, I-Hsieh Wong, Shih-Hsien Huang and Chih-Hsiung Huang, “3D Ge nanowire transistors,” IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, Alaska, Sept. 2015
C. W. Liu, I-Hsieh Wong, Yen-Ting Chen and Shu-Han Hsu, “High Mobility Ge Channel Transistors,” Advanced Materials World Congress, Stockholm, Sweden, Aug. 2015
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Tai-Cheng Shieh and C. W. Liu, “Junctionless Gate-all-around pFETs on Si with In-situ Doped Ge Channel,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2015
Shi Luo, Eason Lin, Hai Xiao, Jiun-Haw Lee, C. W. Liu, William Goddard, and Julia R. Greer, “Effects of Trioctylphosphine Sulfide Passivation on Na Transport within CuInSe2Thin Films,” MRS spring meeting, San Francisco, 2015
C. W. Liu, I-Hsieh Wong, Yen-Ting Chen, Wen-Hsien Tu, Shih-Hsien Huang, and Shu-Han Hsu, “Ge Gate-All-Around FETs on Si,” IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (IEEE-ICSICT), Guilin, China, Oct. 2014
C. W. Liu, Y.-T Chen, and S.-H Hsu, “Gate-all-around Ge FETs,” 226th Meeting of Electrochemical Society, Cancun, Mexico, Oct. 2014
C. W. Liu, “High Mobility Ge Channel Transistors,” ISMEN (International Symposium on Materials for Enabling Nanodevices), Tainan, Taiwan, Sept. 2014
C. W. Liu, Yen-Yu Chen, and Wen-Hsien Tu, “SiGe/Ge epi films with photonic and electrical applications,” Science & Applications of Thin Films, Conference & Exhibition (SATF 2014), Turkey, Sept. 2014
Yen-Yu Chen, Chia-Chun Yen, Yi-Hsin Nien, Wen-Wei Hsu, Qing-Qi Chen, and C. W. Liu, “Reabsorption effects on direct band gap emission from germanium light emitting diodes,” The 11th International Conference on Group IV Photonics, Paris, Aug. 2014
Yen-Yu Chen, T.-Y. Chang, C.-C. Yen, and C. W. Liu, “Enhanced light extraction of Ge by GeO2 micro hemispheres,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, Jun. 2014
Wen-Ling Lu, J.-S. Liu and C. W. Liu, “Simulated Analysis of Interdigitated Back Contact Solar Cells,” 21st Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 2014
Chun-Ti Lu, X. Zhu and C. W. Liu, “Coupled optical and electrical simulations of Cu(In,Ga)Se2 solar cells,” 21st Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 2014
Chun-Ti Lu, T.-M. Chao and C. W. Liu, “Excess carrier recombination in amorphous silicon solar cells due to deep texture,” 21st Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, May 2014
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, Huang-Siang Lan, and C. W. Liu, “In-situ Doped and Tensily Stained Ge Junctionless Gate-all-around nFETs on SOI Featuring Ion = 828 uA/um, Ion/Ioff ~ 1E5, DIBL= 16-54 mV/V, and 1.4X External Strain Enhancement,” International Electron Devices Meeting (IEDM), p.239-242, 2014
Chun-Ti Lu, Qing-Qi Chen, and C. W. Liu, “Al2O3/TiO2 bilayers as passivation and antireflection coating on silicon,” 45th Semiconductor Interface Specialists Conference, 2014
H.-S. Lan, and C. W. Liu, “Electron Ballistic Current Enhancement of Ge1-xSnx FinFETs,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014
Hung-Chih Chang, Pin-Shiang Chen, Fu-Liang Yang, and C. W. Liu, “Strain Response of Monolayer MoS2 in The Ballistic Regime,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014
Y. -T. Chen, H. -C. Chang, I. -S. Wong, C. -M. Lin, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “EUV Degradation of High Performance Ge MOSFETs,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2013
Tsun-Hsin Wong, Carissa Eisler, Chris Chen, Jeff Bosco, Daisuke Ryuzaki, Wen-Wei Hsu, C.W. Liu, Chi-Feng Lin, Tien-Lung Chiu, Jiun-Haw Lee, Chuang-Chuang Tsai, and Harry A. Atwater, “Surface Passivation of CuInSe2 with Trioctylphosphine Sulfide,” MRS spring meeting 2013, 2013
Jhih-Yang Yan, Pin-Shiang Chen, Jiun-Ian Pai, Wen-Wei Hsu and C. W. Liu, “The Incorporation of Electromagnetic Effects on Through Silicon Vias in TCAD Simulation,” International Semiconductor Device Research Symposium, 2013
Pin-Shiang Chen, Hung-Chih Chang, Jhih-Yang Yan and C. W. Liu, “Strain Response of Monolayer MoS2 under Ballistic Limit,” International Semiconductor Device Research Symposium, 2013
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Chun-Liu Chu, Shu-Han Hsu and C. W. Liu, “High Performance Junctionless In-situ Doped Ge Gate-all-around PFETs on Si,” International Semiconductor Device Research Symposium, 2013
Chih-Hsiung Huang, Cheng-Ming Lin, Hung-Chih Chang and C. W. Liu, “Post-Gate Fluorine Incorporation by CF4 Plasma on Very High Tetragonal ZrO2/Ge Gate Stack with Ultrathin EOT of 0.4 nm,” 44th Semiconductor Interface Specialists Conference, 2013
Ya-Shiun Wu ,Yen-Yu Chen , C.-H. Huang, and C. W. Liu, “High efficient N-type solar cells using ion implanted emitters and back surface field,” 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), 2013
C. W. Liu, Hung-Chih Chang, Yen-Ting Chen, Wen-Hsien Tu, I-Hsieh Wong, Shu-Han Hsu, and Chun-Lin Chu, “3D Ge transistors,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Tainan, Taiwan, 2013
Hung-Chih Chang, Pin-Shiang Chen, and C. W. Liu, “Tensile Strain Responses and Dielectric Effect on Monolayer MoS2,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Tainan, Taiwan, 2013
Jheng-Sin Liu, Wen-Ling Lu, and C.W. Liu, “Three-dimensional simulation of metal grid effects on Si solar cells,” 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), 2013
I-Hsieh Wong, Yen-Ting Chen, Huang-Jhih Ciou, Yu-Sheng Chen, Jhih-Yang Yan and C.W. Liu, “Mobility Strain Response and Low Temperature Characterization of Ge p-MOSFETs,” 71st Annual Device Research Conference, 2013
Yen-Yu Chen, C.-H. Huang, W.-S. Ho, M.-H. Tsai, and C. W. Liu, “Fabrication and analysis of 18.2% efficient solar cell with co-activation of ion implanted emitter and back surface field,” 20th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, 2013
H. -C. Chang, S.-H Hsu, C.-L Chu, W.-H Tu, Y.-T Chen, P.-J Sung, G.-Li Luo, and C. W. Liu, “Germanium Gate-All-Around FETs on SOI,” 222th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2012
C. W. Liu, Hung-Chih Chang, Cheng-Ming Lin, and Yen-Ting Chen, “Planar and 3D Ge FETs,” 11th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Xi’an, China, Oct. 2012
W.-S. Ho, M.-H. Tsai, Y.-Y. Chen, W.-W. Hsu , C.-L. Chu, Y.-Y. Chen, S.-W. Tan, and C. W. Liu, “Ion implanted boron emitter n-Si solar cells with wet oxide and Al2O3 passivation,” SuNEC 2012 - Sun New Energy Conference, Sicily, Italy, Sept. 2012
Yu-Chun Yin, Hung-Chih Chang, and C.W.Liu, “Low Leakage Junctionless Vertical Pillar Transistor,” International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, Sept. 2012
Wei Zheng, Zhe Chuan Feng, Ling-Yun Jang, Rui Sheng Zheng, Chih-Fang Huang, and C. W. Liu, “Angular dependence of X-ray absorption from 3C-SiC/Si,” 2nd Cross-Strait Synchrotron Radiation Research Symposium, Hsinchu, Taiwan, Aug. 2012
Y. –Y. Chen, Y. –H. Nien, Y. –H. Chi, and C. W. Liu, “Reabsorption Effects on Ge Photoluminescence,” 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, California, Jun. 2012
Wei Zheng, Rui Sheng Zheng, Hong Lei Wu, Fa Di Li, C. W. Liu and Zhe Chuan Feng, “Temperature Dependence of Raman Scattering from hexagonal AlN whisker,” Symposium on Nano Device Technology (SNDL), Hsinchu, Taiwan, Apr. 2012
H.-C. Sun, J. Y. Chen, Y.-J. Yang, T.-M. Chao, W.-D. Chen, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “Enhanced recovery of light-induced degradation on the micromorph solar cells by reverse bias,” International Conference on Renewable Energies and Power Quality (ICREPQ'12), Santiago de Compostela, Spain, Mar. 2012
C. W. Liu, H.-S. Lan, and Y.-T. Chen, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors and mobility strain response,” CSTIC, Shanghai, China, Mar. 2012
Cheng-Ming Lin, Hung-Chih Chang, Yen-Ting Chen, I-Hsieh Wong, Huang-Siang Lan, Shih-Jan Luo, Jing-Yi Lin, Yi-Jen Tseng, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ~43, ~2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response,” International Electron Devices Meeting (IEDM), p.509-512, 2012
Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen, Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels,” International Electron Devices Meeting (IEDM), p.525-528, 2012
C.-H. Shen, J.-M. Shieh, T.-T. Wu, U.-P. Chiou, H.-C. Kuo, P. Yu, T.-C. Lu, Y.-L. Chueh, C.W. Liu, C. Hu, and F.-L. Yang, “Hybrid CIS/Si Near-IR Sensor and 16% PV Energy-Harvesting Technology,” International Electron Devices Meeting (IEDM), p.279-282, 2012
Y. –Y. Chen, Y. –H. Nien, Y. –H. Chi, and C. W. Liu, “Reabsorption of Ge direct band emission,” 19th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, 2012
C. W. Liu, “N-type Mono Si cells,” IEDMS, Taipei, Taiwan, Nov. 2011
H. -C. Chang, S. -C. Lu, W. -C. Chang, T. -P. Chou, H. -S. Lan, C. -M. Lin, and C. W. Liu, “Theoretical and Experimental Demonstration of Electronic State of GeO2,” 220th Meeting of Electrochemical Society, Boston, Massachusetts, Oct. 2011
Z. C. Feng, Y.-L. Tu, K.-Y. Lee, C. W. Liu, C.-C. Tin, Z. L. Li, C. R. Ding, and Z. R. Qiu, “Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si,” 2011 International Conference on Silicon Carbideand Related Materials (ICSCRM 2011), Cleveland, Ohio USA, Sept. 2011
H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “A parameterized SPICE macromodel of resistive random access memory and circuit demonstration,” IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, Sept. 2011
Wen.-Hsien Tu, C.-H Lee, and C.W.Liu, “Strained GeSi Layer Grown on (110) Silicon-On-Insulator,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug. 2011
C. W. Liu, T. -H. Cheng, Y. –Y. Chen, S. -R. Jan, C. -Y. Chen, S. T. Chan, Y. –H. Nien, Yuji Yamamoto, and Bernd Tillack, “Direct and indirect radiative recombination from Ge,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug. 2011
T. -H. Cheng , J. Y. Chen , W. W. Hsu , C. W. Liu, C. Y. Hsiao, and H. R. Tseng, “Defect Related Negative Temperature Coefficiency of Short Circuit Current of Cu(In,Ga)Se2 Solar Cells,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
Y.-Y. Chen, Wei-Chiang Chang, S. T. Chan, and C. W. Liu, “Germanium oxide passivation for Ge absorber,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
W. S. Ho, Y.-H. Huang, W.-W. Hsu, Y.-Y. Chen, Y.-Y. Chen, and C. W. Liu, “Ion Implanted Boron Emitter N-Silicon Solar Cells With Wet Oxide Passivation,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
Y.-J. Yang, J. Y. Chen, H.-C. Sun, C. W. Liu, M.-H. Tseng, C.-C. Bi, and C.-H. Yeh, “Microcrystalline silicon solar cells with heterojunction structure,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, Jun. 2011
C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan, “Photoluminescence and Electroluminescence from Ge,” symposium on Si-based materials and devices, Xiamen, China, May 2011
W.-W. Hsu, J. Y. Chen, T. -H. Cheng, S. C. Lu, S.-T. Chan, W. S. Ho, and C. W. Liu, “Surface Passivation of Cu(In,Ga)Se2 by Atomic Layer Deposited Al2O3,” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May 2011
17. H.-C. Sun, J. Y. Chen, Y.-J. Yang, T.-M. Chao, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “applying reverse bias to recover the light-induced degradation of amorphous silicon germanium solar cells,” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May 2011
H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “Physical mechanism of HfO2-based bipolar resistive random access memory,” 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2011
C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan, “Enhancements of direct band gap transition from Ge,” 2011 Taiwan-USAF Nanoscience Workshop, Seattle, U.S.A, Apr. 2011
W.-W. Hsu, C.-Y. Lai, W. S. Ho, and C. W. Liu, “Insulating Halos to Boost Planar CMOS Performance,” 18th Symposium on Nano Device Technology (SNDT), Hsinchu, Taiwan, Apr. 2011
C. W Liu, “high mobility channels,” 2011 International Workshop on Exploratory Research for Semiconductor Devices and VLSI Packaging, Beijing, China, Mar. 2011
C. W. Liu, “high mobility materials for technologies and physics,” 5th International Workshop on High k dielectrics on high carrier mobility semiconductors, Hsinchu, Taiwan, 2011
Yu-Jen Hsiao, Ting-Jen Hsueh, Jia-Min Shieh, Yu-Ming Yeh, Chien-Chih Wang, Bau-Tong Dai, Wen-Wei Hsu, Jing-Yi Lin, Chang-Hong Shen, C. W. Liu, Chenming Hu and Fu-Liang Yang, “Bifacial CIGS (11% Efficiency)/Si Solar Cells by Cd-free and Sodium-free Green Process Integrated with CIGS TFTs,” International Electron Devices Meeting (IEDM), 2011
Shu-Han Hsu, Chun-Lin Chu, Wen-Hsien Tu, Yen-Chun Fu, Po-Jung Sung, Hung-Chih Chang, Yen-Ting Chen, Li-Yaw Cho, Guang-Li Luo, William Hsu, C. W. Liu, Chenming Hu, and Fu-Liang Yang, Chenming Hu, and Fu-Liang Yang, “Nearly Defect-free Ge Gate-All-Around FETs on Si Substrates,” International Electron Devices Meeting (IEDM), 2011
C. W. Liu, “High mobility for physics and technologies,” the III Nanotechnology International Forum, Moscow, Nov. 2010
H.-C. Sun, W.-D. Chen, T. H. Cheng, Y.-J. Yang and C. W. Liu, “Recovery of light induced degradation of micromorph solar cells by reverse bias,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
T. -H. Cheng , K.-L. Peng, C. -Y. Ko , C.-Y. Chen , S. T. Chan, and C. W. Liu, “Enhancements of Direct Band Radiative Recombination from Ge,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
T. -H. Cheng , W. W. Hsu , C.Y. Huang, J.-A. Lu, J. Y. Chen, and C. W. Liu, “Photoluminescence Characterization and Passivation of CIGS Absorber,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
C. -M. Lin, Y. -T. Chen, C.-H. Lee, H.-C. Chang, W. -C. Chang, and C. W. Liu, “Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
S. -R. Jan, C. -H. Lee, T. -H. Cheng , Y. -Y. Chen, K. -L. Peng, S. -T. Chan, C. W. Liu, Y. Yamamoto, and B. Tillack, “Extrinsic effects of indirect radiative transition of Ge,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
C. -H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu, “Surface Orientation Effects on SiGe Quantum Dots and Nanorings Formation,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 2010
W. S. Ho, Y.-Y. Chen, T.-H. Cheng, J.-Y. Chen, J.-A. Lu, P.-L. Huang, and C. W. Liu, “Thermal oxide, Al2O3 and amorphous-Si passivation layers on silicon,” 35th IEEE Photovoltaic Specialist Conference, Hawaiian Convention Center in Waikiki, Hawaii, Jun. 2010
C. -H. Lee, W. -H. Tu, H. T. Chang, Y. -C. Fu, S. W. Lee, and C. W. Liu, “SiGe quantum dots and nanorings on Si(111),” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May 2010
T. M. Lu, C. -H. Lee, D. C. Tsui, and C. W. Liu, “High mobility two-dimensional electron gas in strained Si,” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May 2010
T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK,” March Meeting of The American Physical Society, Portland, Oregon, USA, Mar. 2010
T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK,” March Meeting of the American Physical Society, Portland, Oregon, USA, Mar. 2010
., “Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films,” ECS Transactions - CSTIC 2010, Vol. 27, Silicon Technology for Electronic and Photovoltaic Applications, 2010
Yen Chun Fu, William Hsu, Yen-Ting Chen, Huang-Siang Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” International Electron Devices Meeting (IEDM), 2010
Y.-T. Chen, C.-F. Huang, H.-C. Sun, T.-Y. Wu, C.-Y. Ku, C. W. Liu, Y.-C. Hsu, and J.-S. Chen, “A Design of 1T Memory Cells Using Channel Traps for Long Data Retention Time,” 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2009
H.-C. Chang, P.-S. Kuo, C.-Y. Peng, Y.-T. Chen, W.-Y. Chen, and C. W. Liu, “Optimization of A Saddle-like FinFET by Device Simulation for Sub-50nm DRAM Application,” 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2009
T.-H. Cheng, C. -Y. Ko, C.-Y. Chen, K.-L. Peng, C. W. Hsu, P.K. Chiang, and C. W. Liu, “Luminescence from monolithic GaInP/GaInAs/Ge triple-junction solar cells,” 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, Nov. 2009
W.S. Ho, J.-F. Liao, Y.-Y. Chen, C.-A. Lu, W.-D. Chen, W.-F. Tsai, C.-F. Ai, and C. W. Liu, “Passivation of solar cell by Plasma Immersion Ion Implantation,” 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, Nov. 2009
C.-F. Huang, H.-C. Sun, P.-S. Kuo, Y.-T. Chen, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009), Suzhou, China, Jul. 2009
C.-H. Lee, Y. -Y. Shen, Y. Y. Chen, H.-T. Chang, S. W. Lee, and C. W. Liu, “SiGe Quantum Dots and Quantum Rings on Si(110) by Ultra-High Vacuum Chemical Vapor Deposition,” ICSI-6, p. 43, Los Angeles, USA, May 2009
P. S. Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation and thermal stability in thin SiGe films with an inserted Si1-yCy layer,” ICSI-6, p. 13, Los Angeles, USA, May 2009
C.-H. Lin and C. W. Liu, “Relation between Currents and Positions of Delta-Doped Layers in SiGe QDIPs,” ICSI-6, p. 113, Los Angeles, USA, May 2009
T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, C.-Y. Chen, and C. W. Liu, “Minority carrier lifetime measurement of monocrystalline silicon solar cell by temporal electroluminescence method,” ICSI-6, p. 125, Los Angeles, USA, May 2009
C.-Y. Peng, Y.-H. Yang, C.-M. Lin, Y.-Y. Shen, M. H. Lee, and C. W. Liu, “The Process Strain Determination of Nickel Germanides by Raman Spectroscopy,” ICSI-6, p123, Los Angeles, USA, May 2009
H. T. Chang, S. W. Lee, C.-H. Lee, S. L. Cheng, and C. W. Liu, “Ge redistribution of self-assembled Ge islands on Si (001) during annealing,” ICSI-6, p63, Los Angeles, USA, May 2009
H.-L. Chang, H.-C. Chang, S.-C. Yang, H.-C. Tsai, H.-C. Li, and C. W. Liu, “Improved SPICE Macromodel of Phase Change Random Access Memory,” 2009 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), Hsinchu, Taiwan, Apr. 2009
T. -H. Cheng, K.-L. Peng, C.Y. Huang, W. D. Chen, and C. W. Liu, “Characterization of CIGS solar cell absorber,” IPVSEE 2009, Beijin, China, 2009
G.-L. Luo, S.-C. Huang, C.-T. Chung, Dawei Heh, C.-H. Chien, C.-C. Cheng, Y.-J. Lee, W.-F. Wu, C.-C. Hsu, M.-L. Kuo, J.-Y. Yao, M.-N. Chang, C.-W. Liu, C.-M. Hu, C.-Y. Chang, and F.-L. Yang, “A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage,” IEDM 2009, 2009
Y.-Y. Chen, W.-S. Ho, C.-H. Lee, Y.-H. Yang, W.-D. Chen, C. W. Liu, “The Ge1-xSnx MOS Infrared Photodetector,” ICSI-6, p114, 2009
H.-C. Sun, C.-F. Huang, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “A New NBTI Characterization Method on Polycrystalline Silicon Thin-Film Transistors,” 15th International Display Workshop (IDW), Vol. 2, pp. 659-662, Niigata, Japan, Dec. 2008
C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 2008
C.-H. Lee, C. M. Lin, Y. -Y. Sen, S. W. Lee P. Shushpannikov, R. V. Goldstein, and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 2008
W. S. Ho, C.-H. Lin, P.-S. Kuo, W. W. Hsu, T.-H. Cheng, Y.-Y Chen and C. W. Liu, “Metal Oxide Semiconductor UV Sensor,” 7th IEEE Conference on Sensors, Lecce, Italy, Oct. 2008
C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, K.-C. Lin, and J.-S. Chen, “Comprehensive Study of Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 2008
C.-Y. Peng, Y.-H. Yang, C.-M. Lin,Y.-J. Yang, C.-F. Huang, and C. W. Liu, “Process Strain Induced by Nickel Germanide on (100) Ge Substrate,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 2008
S. W. Lee, H. T. Chang, C. -H. Lee, C. A. Chueh, S. -L. Cheng, W. -W. Wu, C. W. Liu, “Vertical Self-Alignment of SiGe Nanolenses on Si (001),” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
C.-H. Lee, C. M. Lin, S. W. Lee, P. Shushpannikov, R. V. Goldstein and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, Y.-H. Yang, C.-W. Lai, C. M. Lin and C. W. Liu, “Micro-Raman Studies on Nickel Germanides formed on (110) crystalline Ge,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2008
S. W. Lee, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” 4th International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, Jul. 2008
W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide Photodetector,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
S.-W. Lee, H. T. Chang, C.A. Chueh, S. L. Cheng, C.-H. Lee, and C. W. Liu, “The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, “Crosstalk Reduction Technique Between Dual SiGe Power Amplifiers,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, and C. W. Liu, “Nickel Germanide Formation: Orientation and Temperature Effects,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 2008
Y.-J. Yang, M. H. Liao, C. W. Liu, Lingyen Yeh, T.-L. Lee, M.-S. Liang, “Superior n-MOSFET Performance by Optimal Stress Design,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2007
C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, C.-W. Chao, and K.-C. Lin, “Comprehensive Study on Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec. 2007
T.-H. Cheng, C. T. Lee, M. H. Liao, P. -S. Kuo, T. A. Hung, and C. W. Liu, “Electrically pumped Ge Laser at room temperature,” International Electron Devices Meeting (IEDM), Washington D.C., Dec. 2007
C.-H. Lee, C.-Y. Yu, C. M. Lin, H. Lin, W.-H. Chang, and C. W. Liu, “Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
P.-S. Chen, S. W. Lee, M.-H. Lee, and C. W. Liu, “Formation of Relaxed SiGe on the buffer consisting of modified SiGe islands by Si Pre-mixing,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
S. W. Lee, P.-S. Chen, M.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 and SiCH6 mediation by ultra-high vacuum chemical vapor deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, C. W. Liu, “Si/SiGe/Si Quantum well Schottky barrier diodes,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007
W.-S. Liao, S.-Y. Huang, T. Shih, and C. W. Liu, “Current and Speed Enhancements at 90nm Node through Package Strain,” International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 2007
P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Novel Transport mechanism of SiGe dot MOS tunneling diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007
S.-R. Jan, M. H. Liao, T.-H. Cheng, Y. Deng and C. W. Liu, “Blue Electroluminescence from Metal/Oxide/n-6H-SiC Tunneling Diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007
T.-H. Cheng, C.-H. Lee, M. H. Liao, and C. W. Liu, “Electroluminescence from strained SiGe quantum dot light-emitting diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007
C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” NanoSMat 2007, Algarve, Portugal, Jul. 2007
C.-Y. Peng, M. H. Liao, C.-F. Huang, Y. J. Yang, S. T. Chang, and C. W. Liu, “Strain effects on MOS capacitors and Schottky diodes,” 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 2007
Y.-J. Yang, S. T. Chang, and C. W. Liu, “Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime,” International Symposium VLSI Technology, System, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2007
H.-L. Chang, P.-T. Lin, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Differential Power Combining Technique for General Power Amplifiers Using Lumped Component Network,” Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Dec. 2006
(Invited) M. H. Liao, C.-H. Lin, C.-H. Lee, T.-H. Cheng, T.-H. Guo, and C. W. Liu, “Electroluminescence from SiGe based metal-oxide-semiconductor Tunneling Diodes,” 210th Meeting of Electrochemical Society, Mexico, Oct. 2006
C.-H. Lin, C.-Y. Yu, M. H. Liao, C.-F. Huang, C.-J. Lee, C.-Y. Lee, and C. W. Liu, “The Process and Optoelectronic Characterization of Ge-on-Insulator,” 210th Meeting of Electrochemical Society, Mexico, Oct. 2006
(Invited) C. W. Liu, and F. Yuan, “Mobility enhancement technologies,” 8th International Conference on Solid-state and Integrated Circuit Technology (ICSICT-06), Shanghai, China, Oct. 2006
(Invited) C.-H. Lin can C. W. Liu, “MOS Si/Ge photodetectors,” Optoelectronic Devices: Physics, Fabrication, and Application III, SPIE Symposium, Boston, Oct. 2006
M. H. Liao, S. T. Chang, P. S. Kuo, H.-T. Wu, C.-Y. Peng, and C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
M. H. Liao, T.-H. Cheng, T. C. Chen, C.-H. Lai, C.-H. Lee, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
Y. M. Lin, S. L, Wu, S. J. Chang, P. S. Chen, and C. W. Liu, “Impact of SiN on performance in Novel CMOS Architecture using substrate strained-SiGe and mechanical strained Si technology,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
M .H. Lee, S. T. Chang, S. Maikap, C.-Y. Yu, and C. W. Liu, “The interface properties of SiO2/strained Si with carbon incorporation surface channel MOSFETs,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 2006
W.-C. Hua, P.-T. Lin, C.-P. Lin, C.-Y. Lin, H.-L. Chang, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Coupling Effects of Dual SiGe Power Amplifiers for 802.11n MIMO Applications,” IEEE Radio Frequency Integrated Circuits (RFIC) Conference, San Francisco, USA, 2006
M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2um emission from Si/Ge heterojunction LED and up to 1.55um detection by GOI detector with strain-enhanced features,” 51st International Electron Device Meeting (IEDM), Washington D.C., Dec. 2005
I.-J. Yang, C.-Y. Peng, S. T. Chang, and C. W. Liu, “Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 2005
C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, and C. W. Liu, “Novel Schottky Barrier Ge/Si Heterojunction PMOS,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 2005
W.-C. Hua, H.-H. Lai, P.-T. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “High-Linearity and Temperature-Insensitive 2.4 GHz SiGe Power Amplifier with Dynamic-Bias Control,” 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Conference, Jun. 2005
S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu, and L. J. Chen, “Field emission properties of self-assembled Ge quantum dots grown by ultrahigh vacuum chemical vapor deposition,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 2005
Y. H. Peng, P. S. Chen, M.-J. Tsai, K. T. Chen, C. W. Liu, C. H. Kuan, and S. C. Lee, “The study of Electro-Luminescence from Ge/Si quantum dots and Si/SiGe supperlattices,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), p.226, abstract book, May 2005
S. W. Lee, P. S. Chen, K. F. Liao, M.-J. Tsai, C. W. Liu, and L. J. Chen, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), p.116, abstract book, May 2005
P. S. Chen, M. H. Lee, S. W. Lee, C. W. Liu, and M. -J. Tsai, “(Invited)Strained CMOS technology with Ge,” 207th Meeting of Electrochemical Society, Quebec City, Canada, May 2005
C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 2005
P.-S. Kuo, C.-H. Lin, P. S. Chen, and C. W. Liu, “The current transport mechanism of MOS Photodetector with Pt Gate,” 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 2005
(Invited) C.-H. Lin, M.-H. Liao, and C. W. Liu, “CMOS Optoelectronics,” Symposium on Nano Device Technology (SNDT), 2005
S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, “Package-strain-enhanced device and circuit performance,” 50th International Electron Device Meeting (IEDM), Technical Digest, pp. 233-236, San Francisco, Dec. 2004
P. S. Chen, S. W. Li, W. Y. Hiseh, M.-J. Tsai, and C. W. Liu, “UHV/CVD of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructure,” International Conference in Asia IUMRS-ICA, Hsinchu, Taiwan, Nov. 2004
(Invited) C. W. Liu, F. Yuan, Z. Pei, and J.-W. Shi, “Si/SiGe heterojunction phototransistor: physics and modeling,” Second International Symposium on Integrated Optoelectronics, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
P. S. Chen, Z. Pei, S. W. Lee, C. W. Liu, and M.-J. Tsai, “Nanostructure and optical properties of self-assembled Ge quantum dots grown in a hot wall UHV/CVD system,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
(Invited) C. W. Liu, S. Maikap, M.-H. Liao and F. Yuan, “BiCMOS devices under mechanical strain,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
S. T. Chang, M. H. Lee, and C. W. Liu, “Strained Si1-xCx on Field Transistor on SiGe Substrate,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 2004
P. S. Chen, S. W. Li, M. H. Li, C.W. Liu and M.-J. Tsai,, “Thin relaxed SiGe buffer for strained Si CMOS,” Semiconductor Manufacturing Technology Workshop, Hsinchu, Taiwan, Sept. 2004
S. W. Lee, P. S. Chen, M. H. Lee, C. W. Liu and L. J. Chen, “The growth of high-quality SiGe films with an Intermediate Si layer for strained Si nMOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
(Invited) C. W. Liu and B.-C. Hsu, “CMOS optoelectronics,” Advance Short-time Thermal Processing for Si-Based CMOS Devices II, 205th Meeting of Electrochemical Society, San Antonio, Texas, May 2004
(Invited) M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y.-C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, “The Noise Characteristics in Strained-Si MOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
T. C. Chen, L. S. Lee, W. Z. Lai, and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 2004
C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on viscous SGOI substrates by wafer bonding and layer transfer techniques,” 15th International Conference on Ion Implantation Technology (IIT), 2004
P. S. Chen, K. F. Liao, M. H. Lin, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Influence of H and He implantation on surface morphology and relaxation in SiGe/Si (100),” 15th International Conference on Ion Implantation Technology (IIT), 2004
P. S. Chen, M.-J. Tsai, C. W. Liu, and S. W. Lee, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, and C. W. Liu, “The growth of high-quality SiGe films by introducing an intermediate Si:C layer,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004
C.-Y. Yu, T. C. Chen, S.-H. Huang, L. S. Lee, and C. W. Liu, “Electrical and Optical Reliability Improvement of HfO2 Gate Dielectric by Deuterium and Hydrogen Incorporation,” 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004
C.-H. Lin, P.-S. Kuo, P. S. Chen, C.-Y. Yu, S. T. Chang, C. W. Liu, “Raising Operation Temperature of MOS Ge/Si Quantum Dot Infrared Photodetectors,” International Electron Devices and Materials Symposia (IEDMS), pp. 277-280, Hsinchu, Taiwan, 2004
P.-S. Kuo, C.-H. Lin, B.-C. Hsu, P.S. Chen, C. W. Liu, “A Dual-bias Operated MOS Photodetector with Pt Gate,” International Electron Devices and Materials Symposia (IEDMS), pp. 411-414, Hsinchu, Taiwan, 2004
C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on the Viscous SGOI Substrates,” 11th Symposium on Nano Device Technology (SNDT), 2004
W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen, “Comprehensive Flicker Noise Characterization of the Strained-Si NMOSFETs,” 11th Symposium on Nano Device Technology (SNDT), 2004
C. C. Lee, Y.-H. Liu, T.-C. Chen, C.–Y. Yu, P. S. Chen, Y. T. Tseng, and C. W. Liu, “The material and electrical characteristics of SiGeC alloy grown by chemical vapor deposition using C2H4 precursors,” Asia, CVD III, Taipei, Taiwan, 2004
M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs,” 49th International Electron Device Meeting (IEDM), Technical Digest, pp. 69-72, Washington D.C., Dec. 2003
P.-S. Kuo, B.-C. Hsu, and C. W. Liu, “Liquid Phase Deposited Oxynitride Films and Quantum Dots Characteristics and Applications on MOS Photodetector,” Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, Nov. 2003
C.-Y. Liang, B.-C. Hsu, S. T. Chang, and C. W. Liu, “Novel Si-based SOI-MOS Photodetectors with Ultrahigh Bandwidth,” Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, Nov. 2003
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Relief of strain in SiGe films with a buffer layer containing Ge quantum dots,” 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM), Yokohama, Japan, Oct. 2003
L. S. Lai, C. S. Liang, P. S. Chen, Y. M. Hsu, Y. H. Liu, Y. T. Tseng, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Optimal SiGe:C HBT Module for BiCMOS Applications,” International Symposium VLSI Technology, System, and Applications, Oct. 2003
(Invited) J.-W. Shi, Z. Pei, Y.-M. Hsu, F. Yuan, C.-S. Liang, Y.-T. Tseng, P.-S. Chen, C. W. Liu, S.-C. Lu, M.-J. Tsai, “Si/SiGe Heterojunction Phototransistor,” International Topical Meeting on Microwave Photonics, Budapest, Hungary, Sept. 2003
P. S. Chen, S. W. Lee, Y. H. Peng, Z. Pei, M.-J. Tsai, and C. W. Liu, “Novel composite Ge/Si/Ge quantum dots with high PL efficiency and improved uniformity,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
H. C. Chen, S. W. Lee, S. L. Cheng, L. J. Chen, P. S. Chen and C. W. Liu, “Enhanced growth of amorphous interlayer in Ti thin films on strained Si/SiGe relaxed substrates,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
Y. H. Peng, J.-H. Lu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, S. W. Lee, L. J. Chen, M. H. Ya, Y. F. Chen, “Schottky Quantum Dots Infrared Photodetector with Far Infrared Response,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
L. S. Lai, Y. H. Liu, C. S. Liang, Y. T. Tseng, Y. M. Shiu, P. S. Chen, S. C. Lu, C. W. Liu and M.-J. Tsai, “The optimal base design for SiGe heterojunction bipolar transistors with high fT,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
W.-C. Hua, T.-Y. Yang, C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
S. W. Lee, P. S. Chen, Y. H. Peng, C. W. Liu and L. J. Chen, “Improved quality of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 2003
F. Yuan, Z. Pei, J.-W. Shi, S. T. Chang, and C. W. Liu, “Mextram Modeling of Si/SiGe Heterojunction Phototransistors,” International Semiconductor Device Research Symposium (ISDRS), pp. 92-93, Washington D.C., 2003
B.-C. Hsu, S. T. Chang, P.-S. Kuo, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “MOS Ge/Si Quantum Dot Infrared Photodetectors with Quantum Dot and Wetting Layer Responses,” International Semiconductor Device Research Symposium (ISDRS), pp. 491-492, Washington D.C., 2003
Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C.-S. Liang, C. W. Liu, T.-M. Pan, S. C. Lu and M.-J. Tsai, “Integratable SiGe Phototransistor with High Speed (BW=3GHz) and Extremely-High Avalanche Responsivity,” International Semiconductor Device Research Symposium (ISDRS), pp. 18-19, Washington D.C., 2003
C.-Y. Liang, B.-C. Hsu, C.-H. Lin, S. T. Chang, and C. W. Liu, “Modeling and Simulation of High-bandwidth Si-based MOS/SOI Photodetectors,” International Semiconductor Device Research Symposium (ISDRS), pp. 230-231, Washington D.C., 2003
S. T. Chang, Y. H. Liu, and C. W. Liu, “Buried Oxide Thickness Effect and Lateral Scaling og SiGe HBT on SOI Substrate,” International Semiconductor Device Research Symposium (ISDRS), pp. 16-17, Washington D.C., 2003
(Invited) B.-C. Hsu, Z. Pei, S. T. Chang, P. S. Kuo, P. S. Chen, and C. W. Liu, “Si-based Optoelectronics,” 10th Symposium on Nano Device Technology (SNDT), pp. 1-4, 2003
M. H. Lee, P. S. Chen, Y. T. Tseng, Y. M. Hsu, S. W. Lee, J.-Y. Wei, C.-Y. Yu, and C. W. Liu, “Performance enhancement in strained-Si NMOSFETs on SiGe virtual substrate,” 10th Symposium on Nano Device Technology (SNDT), pp. 28-31, 2003
S. W. Lee, P. S. Chen, L. J. Chen, and C. W. Liu, “The growth of high-quality uniform SiGe films by introducing an intermediate Si layer,” International Conference on Metallurgical Coatings and Thin Films (ICMCTF), pp. 78, San Diego, California, 2003
B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, “High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short Reach Integrated Optical Receivers,” 48th International Electron Device Meeting (IEDM), Technical Digest, pp. 91-94, San Francisco, Dec. 2002
Z. Pei, C.S. Liang, L.S. Lai, Y.T. Tseng, Y.M. Hsu, P.S. Chen, S.C. Lu, C.M. Liu, M.-J. Tsai and C.W. Liu, “High Efficient 850nm and 1310nm Multiple Quantum Well SiGe/Si Heterojunction Phototransistors with 1.25 Plus GHz Bandwidth,” 48th International Electron Device Meeting (IEDM), Technical Digest, pp. 297-300, San Francisco, Dec. 2002
F. Yuan, C. -H. Lin, C. -R. Shie, K. -F. Chen, M. H. Lee, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sept. 2002
W. -C. Hua, M. H. Lee, and C. W. Liu, “A Novel Gas Switching Method to Improve the Reliability of Rapid Thermal Oxide,” 201st Meeting of Electrochemical Society, Philadelphia, May 2002
B.-C. Hsu, W.-C. Hua, C.-R. Shie, C.-C. Lai, K.-F. Chen and C. W. Liu, “A Novel Ge MOS Detector for 1.3um and 1.5um Light Wave Communication,” 201st Meeting of Electrochemical Society, pp. 662, Philadelphia, May 2002
S. T. Chang and C. W. Liu, “Effects of Recombination Lifetime and Velocity Saturation on Ge Profile Design for Base Transit Time of Si/SiGe HBTs,” International Semiconductor Device Research Symposium (ISDRS), ISDRS Proceedings, pp. 490-493, Washington D.C., Dec. 2001
C.-H. Lin, M. H. Lee, B. -C. Hsu, K. -F. Chen, C. -R. Shie, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Semiconductor Device Research Symposium (ISDRS), ISDRS Proceedings, pp. 46-49, Washington D.C., Dec. 2001
B. -C. Hsu, W. T. Liu, C. -H. Lin and C. W. Liu, “Novel Photodetectors Using Metal-Oxide-Silicon Tunneling Structures,” International Semiconductor Device Research Symposium (ISDRS), ISDRS Proceedings, pp. 42-45, Washington D.C., Dec. 2001
S. T. Chang, C. W. Liu, and C. -H. Lin,, “Optimum Ge Profile Design for Base Transit Time Minimization of SiGe HBT,” Asia-Pacific Microwave Conference (APMC), APMC Proceedings, Vol. 1 of 3, p, Taipei, Taiwan, Dec. 2001
C. -H. Lin, M. H. Lee, B. -C. Hsu, and C. W. Liu, “Novel Methods to Incorporate Deuterium in the MOS Structures and Isotope Effects on Soft Breakdown and Interface States,” International Conference on Solid State Devices and Materials (SSDM), SSDM Proceedings, pp. 422-423, Tokyo, Japan, Sept. 2001
C. W. Liu, Y.-H. Liu, M. H. Lee, M.-J. Chen, and C.-F. Lin, “Metal-Oxide-Silicon Light Emitting Diodes Prepared by Rapid Thermal Oxidation,” Rapid Thermal and Other Short-time Processing Technology II, 199th Meeting of Electrochemical Society, Washington D.C., Mar. 2001
C.-F. Lin, M.-J. Chen, M. H. Lee, and C. W. Liu, “Electroluminescence at Si Bandgap from Metal-Oxide-Semiconductor tunneling diodes,” Photonic West, International Society for Optical Engineering (SPIE), San Jose, CA, Jan. 2001
C.-F. Lin, M.-J. Chen, E. Z. Liang, W. T. Liu, M. H. Lee, and C. W. Liu, “Novel Electroluminescence from Metal-Insulator-Oxide Structures on Si,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne, Australia, Dec. 2000
M.-J. Chen, C.-F. Lin, J. J. Chiu, C. W. Liu, and S.-W. Chang, “Metal-Oxide-Semiconductor Light-Emitting Diodes at Si Bandgap Energy,” IEEE Conference on Lasers and Electro-Optics Europe (CLEO/Europe), Nice, France, Sept. 2000
Books:
“Invited” C. W. Liu, S. Maikap, and C.-Y. Yu, “Recent Progress in Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, May 2005
劉致為, 李敏鴻, 魏拯華, “奈米電子,” National Taiwan University Press, 2004
C. W. Liu and L. J. Chen, “SiGe/Si Heterostructures,” Encyclopedia of Nanoscience and Nanotechnology, American Scientific Publishers, 2003
劉致為, 游李興, “奈米技術及產業通識教材(3)奈米電子元件,” 2002 Science and Technology Information Center, National Science Council, 2002
Patents:
Sheng-Ting Fan, Pin-Shiang Chen, C. W. Liu, Chi-Wen Liu, “Semiconductor device and method,” US 10,109,477, Oct. 2018
Fang-Liang LU, I-Hsieh WONG, Shih-Ya LIN , C. W. Liu, Samuel C. PAN, “SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,” US 2018 / 0151734 A1, May 2018
Fang-Liang LU, C. W. Liu, Chi-Wen LIU, Shih-Hsien HUANG, I-Hsieh WONG, “SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR AND A METHOD FOR FABRICATING THE SAME,” US 10,068,995, Jan. 2018
Yen-Ting Chen, I-Hsieh Wong, C. W. Liu, “Semiconductor device and formation thereof,” US 9,847,233, Dec. 2017
Jhih-Yang Yan, C. W. Liu, Der-Chuan Lai, “Semiconductor device and transistor,” US 9,679,893, Jun. 2017
Jhih-Yang Yan, Samuel C. Pan, C. W. Liu, Hung-Yu Yeh, Da-zhi Zhang, “Three-dimensional transistor and methods of manufacturing thereof,” US 9,627,411, Apr. 2017
杜文仙 劉致為, “電晶體結構,” I574414, Mar. 2017
Wei-Fan Lee, C. W. Liu, Chin-Kun Wang, Yuh-Ta FAN, Chih-Hsiung Huang, Tzu-Yao Lin, “Semiconductor structure with interfacial layer and method for manufacturing the same,” US 9,595,593, Mar. 2017
Der-Chuan Lai, Pin-Shiang Chen, Hung-Chih Chang, C. W. Liu, Samuel C. Pan, “Field effect transistors and methods of forming same (Multi 2D-Material Channel Field Effect Transistors with Negative Capacitance in Ferroelectric Materials),” US 9,559,168, Jan. 2017
C. W. Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh, “Field effect transistors and methods of forming same (A Structure of Vertical FETs),” US 9,559,209, Jan. 2017
Pin-Shiang Chen, Samuel C. Pan, C. W. Liu, Sheng-Ting Fan, “Field effect transistors and methods of forming same (Field Effect Transistors using Topological Insulators),” US 9,490,430, Nov. 2016
Hung-Chih Chang, Pin-Shiang Chen, C. W. Liu, “Transistor with wurtzite channel,” US 9,425,250, Aug. 2016
劉致為 陳彥廷, “半導體結構,” I531059, Apr. 2016
C. W. Liu, Yen-Yu Chen, Hsuan-Yi Lin, Cheng-Yi Peng, “Semiconductor device having a charged insulating layer,” US 9,263,542, Feb. 2016
Hung-Chih Chang, Pin-Shiang Chen, C. W. Liu, “3D UTB transistor using 2D material channels,” US 9,240,478, Jan. 2016
C. W. Liu, Y. T. Chen, “Semiconductor Structure,” US 9,105,481 B2, Aug. 2015
Chun-Lin Chu, Shu-Han Hsu, Guang-Li Luo, C. W. Liu, “BRIDGE STRUCTURE,” US 8,975,674, Mar. 2015
C. W. Liu, C.-H. Lai, M.-K. Chen, W.-H. Ho, “Method for photo-detecting and apparatus for the same,” US 7,579,668, Aug. 2009
P.-S. Chen, S. W. Lee, L. J. Chen, C. W. Liu, “Strained silicon forming method with reduction of threading dislocation density,” US 7,498,224, Mar. 2009
C.-H. Lin, Z. Pei, C. W. Liu, “Method for fabricating semiconductor device,” US 7,371,628, May 2008
C.-Y. Yu, S.-R. Jan, S.-T. Chang, C. W. Liu, “Method with mechanically strained silicon for enhancing speed of integrated circuits of devices,” US 7,307,004, Dec. 2007
M. H. Lee, C.-Y. Yu, S.-C. Lu, C. W. Liu, “Fabrication methods for compressive strained-silicon and transistors using the same,” US 7,282,414, Oct. 2007
P.-S. Chen, S. W. Lee, K.-F. Liao, L. J. Chen, C. W. Liu, “Construction of thin strain-relaxed SiGe layers and method for fabricating the same,” US 7,202,512, Apr. 2007
Y.-M. Hsu, J.-W. Shi, Z. Pei, F. Yuan, C. W. Liu, “Semiconductor Phototransistor,” 美國 US 6,759,694
張書通 黃仕澔 劉致為, “利用機械應變矽增加積體電路速度的方法,” 中華民國00557484
C. W. Liu, F. Yuan, C.-H. Lin, “Method for utilizing rough insulator to enhance metal-insulator-semiconductor reliability,” 美國 US 6,794,309 B2
許博欽 張書通 黃仕澔 劉致為, “紅外光光偵測器,” 中華民國I220790
M.-J. Chen, C.-F. Lin, C. W. Liu, M. H. Lee, S. T. Chang, “System and method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device,” 美國 US 6,812,729